S-85S1A Series
www.ablic.com
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN
SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
© ABLIC Inc., 2017-2018 Rev.1.4_00
1
The S-85S1A Series introduces own distinctive low power consumption control and COT (Constant On-Time) control and
features ultra low current consumption and fast transient response. PWM / PFM switching control automatically switches to
PFM control when under light load, and the IC operates at ultra low current consumption of 260 nA quiescent current. The
S-85S1A Series realizes high efficiency in a wide range of load current consumption and provides strong support for
extended period operation of mobile devices and wearable devices which are equipped with compact batteries.
The S-85S1A Series can configure a step-down regulator only with a coil, an input capacitor, and an output capacitor. By
using external parts recommended in this datasheet, the occupancy area can be reduced to 2.0 mm × 4.5 mm = 9.0 mm2,
and it contributes to miniaturization of electronic equipment.
Features Applications
• Ultra low current consumption: 260 nA quiescent current • Wearable device
• Efficiency (when under 100
μ
A load): 90.5% • Bluetooth device
• Fast transient response: COT control • Wireless sensor network device
• Input voltage: 2.2 V to 5.5 V • Healthcare equipment
• Output voltage: 0.7 V to 2.5 V, in 0.05 V step • Smart meter
2.6 V to 3.9 V, in 0.1 V step • Portable game device
• Output voltage accuracy: ±1.5% (1.0 V ≤ VOUT ≤ 3.9 V) Package
• SNT-6A
(1.80 mm
×
1.57 mm
×
t0.5 mm max.)
±15 mV (0.7 V ≤ VOUT < 1.0 V)
• Switching frequency: 1.0 MHz (at PWM operation)
• High side power MOS FET on-resistance: 420 mΩ
• Low side power MOS FET on-resistance: 320 mΩ
• Soft-start function: 1 ms typ.
• Under voltage lockout function (UVLO): 1.8 V typ. (detection voltage)
• Thermal shutdown function:
135°C typ. (detection temperature)
• Overcurrent protection function: 450 mA (at L = 2.2
μ
H)
•
Automatic recovery type short-circuit protection function:Hiccup control
• Input and output capacitors: Ceramic capacitor compatible
• Operation temperature range: Ta = −40°C to +85°C
• Lead-free (Sn 100%), halogen-free
Typical Application Circuit
VSS
VIN
C
IN
10 FPVSS VOUT
EN
SW
C
OUT
10 F
L
2.2 HV
OUT
V
IN
Efficiency
VOUT(S) = 1.8 V
I
OUT
[mA]
100
80
60
40
20
0.1 1 100.01 1000100
0
V
IN
= 2.5 V
V
IN
= 3.6 V
V
IN
= 4.2 V
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
2
Block Diagram
VSS
VIN
PVSS
SW L
C
IN
C
OUT
V
IN
+
+
−
VOUT
VOUT
EN
SW
Ripple generation circuit
ON time generation
circuit
Error amplifier
Enable
circuit
UVP circuit
Reverse current
detection circuit
Overcurrent protection circuit
Output control circuit
Reference voltage circuit
Soft-start cicuit
Thermal shutdown circuit
UVLO
circuit
+
−
+
−
Figure 1
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
3
Product Name Structure
Users can select output voltage for the S-85S1A Series. Refer to "1. Product name" regarding the contents of
product name, "2. Package" regarding the package, "3. Product name list" regarding details of the product
name.
1. Product name
S-85S1
A
B xx - I6T1 U
Package name abbreviation and packing specification
*1
I6T1: SNT-6A, Tape
Environmental code
U: Lead-free (Sn 100%), halogen-free
Output voltage
*2, *3
07 to 39
(e.g., when the output voltage is 0.7 V, it is expressed as 07.)
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
*3. In the range from 0.7 V to 2.5 V, the products which have 0.05 V step are also available.
Contact our sales office when the product is necessary.
2. Package
Table 1 Package Drawing Codes
Package Name Dimension Tape Reel Land
SNT-6A PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
4
3. Product name list
Table 2
Output Voltage (VOUT) S-85S1A Series
0.7 V ± 15 mV S-85S1AB07-I6T1U
0.8 V ± 15 mV S-85S1AB08-I6T1U
0.9 V ± 15 mV S-85S1AB09-I6T1U
1.0 V ± 1.5% S-85S1AB10-I6T1U
1.1 V ± 1.5% S-85S1AB11-I6T1U
1.2 V ± 1.5% S-85S1AB12-I6T1U
1.3 V ± 1.5% S-85S1AB13-I6T1U
1.4 V ± 1.5% S-85S1AB14-I6T1U
1.5 V ± 1.5% S-85S1AB15-I6T1U
1.6 V ± 1.5% S-85S1AB16-I6T1U
1.7 V ± 1.5% S-85S1AB17-I6T1U
1.8 V ± 1.5% S-85S1AB18-I6T1U
1.9 V ± 1.5% S-85S1AB19-I6T1U
2.0 V ± 1.5% S-85S1AB20-I6T1U
2.1 V ± 1.5% S-85S1AB21-I6T1U
2.2 V ± 1.5% S-85S1AB22-I6T1U
2.3 V ± 1.5% S-85S1AB23-I6T1U
2.4 V ± 1.5% S-85S1AB24-I6T1U
2.5 V ± 1.5% S-85S1AB25-I6T1U
2.6 V ± 1.5% S-85S1AB26-I6T1U
2.7 V ± 1.5% S-85S1AB27-I6T1U
2.8 V ± 1.5% S-85S1AB28-I6T1U
2.9 V ± 1.5% S-85S1AB29-I6T1U
3.0 V ± 1.5% S-85S1AB30-I6T1U
3.1 V ± 1.5% S-85S1AB31-I6T1U
3.2 V ± 1.5% S-85S1AB32-I6T1U
3.3 V ± 1.5% S-85S1AB33-I6T1U
3.4 V ± 1.5% S-85S1AB34-I6T1U
3.5 V ± 1.5% S-85S1AB35-I6T1U
3.6 V ± 1.5% S-85S1AB36-I6T1U
3.7 V ± 1.5% S-85S1AB37-I6T1U
3.8 V ± 1.5% S-85S1AB38-I6T1U
3.9 V ± 1.5% S-85S1AB39-I6T1U
Remark Please contact our sales office for products with specifications other than the above.
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
5
Pin Configuration
1. SNT-6A
Table 3
5
4
6
2
3
1
Top view
Figure 2
Pin No. Symbol Description
1 VOUT Voltage output pin
2 VSS GND pin
3 SW External inductor connection pin
4 PVSS Power GND pin
5 VIN Power supply pin
6 EN
Enable pin
"H" : Enable (normal operation)
"L" : Disable (standby)
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
6
Absolute Maximum Ratings
Table 4
(Unless otherwise specified: Ta = +25°C, VSS = 0 V)
Item Symbol Absolute Maximum Rating Unit
VIN pin voltage VIN V
SS − 0.3 to VSS + 6.0 V
EN pin voltage VEN VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0 V
VOUT pin voltage VOUT VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0 V
SW pin voltage VSW VSS − 0.3 to VIN + 0.3 ≤ VSS + 6.0 V
PVSS pin voltage VPVSS VSS − 0.3 to VSS + 0.3 ≤ VSS + 6.0 V
Operation temperature To
pr
−40 to +85 °C
Storage temperature Tst
g
−40 to +125 °C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Thermal Resistance Value
Table 5
Item Symbol Condition Min. Typ. Max. Unit
Junction-to-ambient thermal resistance*1 θJA SNT-6A
Board A − 224 − °C/W
Board B − 176 − °C/W
Board C − − − °C/W
Board D − − − °C/W
Board E − − − °C/W
*1. Test environment: compliance with JEDEC STANDARD JESD51-2A
Remark Refer to " Power Dissipation" and "Test Board" for details.
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
7
Electrical Characteristics
Table 6
(VIN = 3.6 V*1, Ta = +25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Operating input voltage VIN − 2.2 3.6 5.5 V
Output voltage*2 VOUT
1.0 V ≤ VOUT ≤ 3.9 V, no external parts VOUT(S)
× 0.985 VOUT(S) VOUT(S)
× 1.015 V
0.7 V ≤ VOUT <1.0 V, no external parts VOUT(S)
− 0.015 VOUT(S) VOUT(S)
+ 0.015 V
Current consumption
during shutdown ISSS V
EN = 0 V − 1 100 nA
Current consumption
during switching off ISS1
VOUT = VOUT(S) + 0.1 V, VEN = VIN,
no external parts,
no switching operation
− 260 500 nA
High level input voltage VSH V
IN = 2.2 V to 5.5 V, EN pin 1.1 − − V
Low level input voltage VSL V
IN = 2.2 V to 5.5 V, EN pin − − 0.3 V
High level input current ISH V
IN = 2.2 V to 5.5 V, EN pin, VEN = VIN −100 − 100 nA
Low level input current ISL V
IN = 2.2 V to 5.5 V, EN pin, VEN = 0 V −100 − 100 nA
High side power
MOS FET on-resistance RHFET I
SW = 100 mA − 420 − mΩ
Low side power
MOS FET on-resistance RLFET I
SW = −100 mA − 320 − mΩ
High side power
MOS FET leakage current IHSW V
IN = 2.2 V to 5.5 V, VEN = 0 V, VSW = 0 V − 1 100 nA
Low side power
MOS FET leakage current ILSW V
IN = 2.2 V to 5.5V, VEN = 0 V, VSW = VIN −100 1 − nA
Current limit*3 ILIM L = 2.2 μH − 450 − mA
ON time*4 tON tON(S) = 1/fSW*5 × VOUT/VIN,
VOUT = VOUT
(
S
)
× 0.9 tON(S)/1.3 tON(S) t
ON(S)/0.7 ns
Minimum OFF time tOFF
(
MIN
)
− − 100 − ns
UVLO detection voltage VUVLO− When VIN falls 1.7 1.8 1.9 V
UVLO release voltage VUVLO+ When VIN rises 1.9 2.0 2.1 V
UVP detection voltage VUVP − − VOUT(S)
× 0.7 − V
Soft-start wait time tSSW Time until VOUT starts rising − 1.5 − ms
Soft-start time tSS Time until VOUT reaches 90% after it
starts rising − 1.0 − ms
Thermal shutdown
detection temperature TSD Junction temperature − 135 − °C
Thermal shutdown
release temperature TSR Junction temperature − 115 − °C
*1. VIN = VOUT(S) + 1.0 V (VOUT(S) ≥ 2.6 V)
*2. VOUT: Actual output voltage
VOUT(S): Set output voltage
*3. The current limit changes according to the L value for the inductor to be used, input voltage, and output voltage.
Refer to " Operation" for details.
*4. tON: Actual ON time
tON(S): Set ON time
*5. fSW: Switching frequency (1 MHz)
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
8
Operation
1. Fast transient response
Distinctive COT (Constant On-Time) control is used for DC-DC converter control.
The S-85S1A Series monitors the output voltage (VOUT) using a comparator and if VOUT falls below the targeted
value, the high side power MOS FET will turn on for a certain amount of time. Since the high side power MOS FET
turns on and VOUT rises immediately after the load current fluctuates rapidly and VOUT falls, the fast transient
response is realized.
The S-85S1A Series outputs ON time in proportion to VOUT and in inverse proportion to power supply voltage.
Therefore, when in continuous mode, even if the power supply voltage or VOUT settings would change, it always
operates at a quasi-fixed frequency of 1 MHz.
2. PWM / PFM switching control
The S-85S1A Series automatically switches between the pulse width modulation method (PWM) and pulse
frequency modulation method (PFM) according to the load current. If the output current (IOUT) is large, the IC will
operate at PWM control. If IOUT is small, the IC will operate at PFM control and the pulse will skip according to the
load current. This reduces switching loss and improves efficiency when under light load.
The S-85S1A Series has a built-in reverse current detection circuit. The reverse current detection circuit monitors
the current flowing through the inductor. If the bottom of ripple current in the inductor falls to 0 mA, the high side
power MOS FET and low side power MOS FET will turn off and switching operation will stop. Switching frequency
will fall from 1.0 MHz by skipping a pulse. This means that the smaller IOUT is, the more the switching frequency (fSW)
will drop, and it reduces switching loss.
3. Ultra low current consumption
When in discontinuous mode, the S-85S1A Series reduces current consumption to 260 nA typ. by intermittently
operating a control circuit and a protection circuit. When under light load, the high side power MOS FET and low
side power MOS FET will turn off. When switching operation stops and a certain amount of time elapses, only the
necessary circuits will operate.
Under voltage lockout function (UVLO), thermal shutdown function, current limit function, and automatic recovery
type short-circuit protection function are prepared in the S-85S1A Series, and each protection function will carry out
detection operation for a certain amount of time from when the high side power MOS FET turns on under light load.
It is thus able to realize ultra low current consumption. When under heavy load, the IC changes to continuous mode
as a result of the fact that the high side power MOS FET and low side power MOS FET turn on continuously, so all
the IC, including the protection circuits, will operate.
4. EN pin
This pin starts and stops switching operation. When the EN pin is set to "L", the operation of all internal circuits,
including the high side power MOS FET, is stopped, reducing current consumption. Current consumption increases
when a voltage of 0.3 V to VIN − 0.3 V is applied to the EN pin. When not using the EN pin, connect it to the VIN pin.
Since the EN pin is neither pulled down nor pulled up internally, do not use it in the floating status. The structure of
the EN pin is shown in Figure 3.
Table 7
EN Pin Internal Circuit VOUT Pin Voltage
"H" Enable (normal operation) VOUT*1
"L" Disable (standby) "High-Z"
*1. Refer to *2 in Table 6 in " Electrical Characteristics".
VIN
VSS
EN
Figure 3
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
9
5. Under voltage lockout function (UVLO)
The S-85S1A Series has a built-in UVLO circuit to prevent the IC from malfunctioning due to a transient status at
power-on or a momentary drop in the supply voltage. When UVLO status is detected, the high side power MOS FET
and low side power MOS FET will turn off, and the SW pin will change to "High-Z". For this reason, switching
operation will stop. The soft-start function is reset if UVLO status is detected once, and is restarted by releasing the
UVLO status.
Note that the other internal circuits operate normally and the status is different from the disabled status.
Also, there is a hysteresis width for avoiding malfunctions due to generation of noise etc. in the input voltage.
6. Thermal shutdown function
The S-85S1A Series has a built-in thermal shutdown circuit to limit overheating. When the junction temperature
increases to 135°C typ., the thermal shutdown circuit becomes the detection status, and the switching operation is
stopped. When the junction temperature decreases to 115°C typ., the thermal shutdown circuit becomes the release
status, and the switching operation is restarted.
If the thermal shutdown circuit becomes the detection status due to self-heating, the switching operation is stopped
and output voltage (VOUT) decreases. For this reason, the self-heating is limited and the temperature of the IC
decreases. The thermal shutdown circuit becomes release status when the temperature of the IC decreases, and
the switching operation is restarted, thus the self-heating is generated again. Repeating this procedure makes the
waveform of VOUT into a pulse-like form. Switching operation stopping and starting can be stopped by either setting
the EN pin to "L", lowering the output current (IOUT) to reduce internal power consumption, or decreasing the ambient
temperature.
Table 8
Thermal Shutdown Circuit VOUT Pin Voltage
Release: 115°C typ.*1 VOUT
Detection: 135°C typ.*1 "High-Z"
*1. Junction temperature
7. Overcurrent protection function
The S-85S1A Series has a built-in current limit circuit.
The overcurrent protection circuit monitors the current that flows through the low side power MOS FET and limits
current to prevent thermal destruction of the IC due to an overload, magnetic saturation in the inductor, etc.
When a current exceeding the current limit (ILIM) flows through the low side power MOS FET, the current limit circuit
operates and prohibits turning on the high side power MOS FET until the current falls below the low side current limit
(ILIMDET). If the value of the current that flows through the low side power MOS FET falls to the ILIMDET or lower, the
S-85S1A Series returns to normal operation. ILIMDET is fixed at 270 mA typ. in the IC, and ILIM will vary depending on
the external parts to be used.
The relation between ILIM, the inductor value (L), the input voltage (VIN), and the output voltage (VOUT) are shown in
the following expression.
ILIM = ILIMDET + 1
2 × L × fSW × (VIN
−
VOUT) × VOUT
VIN
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
10
8. Automatic recovery type short-circuit protection function (Hiccup control)
The S-85S1A Series has a built-in automatic recovery type short-circuit protection function for Hiccup control.
Hiccup control is a method for periodically carrying out automatic recovery when the IC detects overcurrent and
stops the switching operation.
8. 1 When over load status is released
<1> Overcurrent detection
<2> Under voltage protection circuit (UVP circuit) detects a drop in the output voltage (VOUT).
<3> 220
μ
s elapse
<4> Switching operation stop (for 9 ms typ.)
<5> Overload status release
<6> The IC restarts, soft-start function starts.
In this case, it is unnecessary to input an external reset signal for restart.
<7> VOUT reaches VOUT(S) after 1.0 ms typ. elapses.
<1> <5>
<2> <4> <6>
<3> <7>
VSW
VOUT
IL
*1
220 s 9.0 ms typ. 1.0 ms typ.
ILIMDET = 270 mA typ.
IOUT = 200 mA max.
0 A
0 V
0 V
VOUT(S)
VUVP typ.
Overload status Normal load status
*1. Inductor current
Figure 4
8. 2 When over load status continues
<1> Overcurrent detection
<2> The UVP circuit detects a drop in VOUT.
<3> 220
μ
s elapse
<4> Switching operation stop (for 9 ms typ.)
<5> The IC restarts, soft-start function starts.
<6> The status returns to <2> when over load status continues after 1.25 ms typ. elapses.
<1>
<2> <4> <5> <2> <4>
<3> <3><6>
VSW
VOUT
IL
*1
220 s 220 s9.0 ms typ. 9.0 ms typ.1.25 ms typ.
ILIMDET = 270 mA typ.
IOUT = 200 mA max.
0 A
0 V
0 V
VOUT(S)
VUVP typ.
Overload status
*1. Inductor current
Figure 5
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
11
9. Pre-bias compatible soft-start function
The S-85S1A Series has a built-in pre-bias compatible soft-start circuit.
If the pre-bias compatible soft-start circuit starts when electrical charge remains in the output voltage (VOUT) as a
result of power supply restart, etc., or when VOUT is biased beforehand (pre-bias status), switching operation is
stopped until the soft-start voltage exceeds the internal feedback voltage, and then VOUT is maintained. If the
soft-start voltage exceeds the internal feedback voltage, switching operation will restart and VOUT will rise to the
output voltage setting value (VOUT(S)). This allows VOUT(S) to be reached without lowering the pre-biased VOUT.
In soft-start circuits which are not pre-bias compatible, a large current flows as a result of the discharge of the
residual electric charge through the low side power MOS FET when switching operation starts, which could cause
damage, however in a pre-bias compatible soft-start circuit, the IC is protected from the large current when switching
operation starts, and it makes power supply design for the application circuit simpler.
In the S-85S1A Series, VOUT reaches VOUT(S) gradually due to the soft-start circuit.
In the following cases, rush current and VOUT overshoot are reduced.
• At power-on
• When the EN pin changes from "L" to "H".
• When UVLO operation is released.
• When thermal shutdown is released.
• At short-circuit recovery
In addition, the soft-start circuit operates under the following conditions.
The soft-start circuit starts operating after "H" is input to the EN pin and the soft-start wait time (tSSW) = 1.5 ms typ.
elapses. The soft-start time (tSS) is set to 1.0 ms typ.
• At power supply restart (the IC restart)
• At UVLO detection (after UVLO release)
• At thermal shutdown detection (after thermal shutdown release)
• After Hiccup control
V
EN
(t
SSW
)(t
SS
)
V
OUT
V
SW
Soft-start operation during pre-bias
Soft-start wait time Soft-start time
Figure 6
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
12
Typical Circuit
VSS
VIN
PVSS
SW L
2.2 μH
10 μF
10 μF
CIN
COUT
VIN
+
+
−
VOUT
VOUT
EN
SS
SW
Ripple generation circuit
ON time generation
circuit
Error amplifier
U
VP circuit
Reverse current
detection circuit
Output control circuit
Reference voltage circuit
Soft-start cicuit
Thermal shutdown circuit
UVLO
cicuit
+
−
+
−
Overcurrent protection circuit
Figure 7
Caution The above connection diagram and constants will not guarantee successful operation. Perform
thorough evaluation using an actual application to set the constants.
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
13
External Parts Selection
Selectable values and recommended values for external parts are shown in Table 9.
Use ceramic capacitors for CIN and COUT.
Table 9
Item Input Capacitor (CIN) Output Capacitor (COUT) Inductor (L)
Selectable value 2.2 μF or larger 4.7 μF to 100 μF 1.5 μH to 10 μH
Recommended value 10 μF 10 μF 2.2 μH
1. Input capacitor (CIN)
CIN can lower the power supply impedance, average the input current, improve the efficiency and noise tolerance.
Select a capacitor according to the impedance of the power supply to be used. Also take into consideration the DC
bias characteristics of the capacitor to be used.
2. Output capacitor (COUT)
COUT is used to smooth output voltage. If the capacitance is large, the overshoot and undershoot during load
transient and output ripple voltage can be improved even more. Select a proper capacitor after the sufficient
evaluation under actual conditions.
Table 10 Recommended Capacitors (CIN, COUT) List (at VOUT(S) ≤ 3.3 V)
Manufacturer Part Number Capacitance Withstanding
Voltage Dimensions (L × W × H)
Murata Manufacturing Co., Ltd. GRM155R60J106ME15 10 μF 6.3 V 1.0 mm × 0.5 mm × 0.5 mm
TDK Corporation C1608X5R0J106K080AB 10 μF 6.3 V 1.6 mm × 0.8 mm × 0.8 mm
Murata Manufacturing Co., Ltd. GRM185R60J106ME15 10 μF 6.3 V 1.6 mm × 0.8 mm × 0.5 mm
Table 11 Recommended Capacitors (CIN, COUT) List (at VOUT(S) > 3.3 V)
Manufacturer Part Number Capacitance Withstanding
Voltage Dimensions (L × W × H)
TDK Corporation C1608X5R0J106K080AB 10 μF 6.3 V 1.6 mm × 0.8 mm × 0.8 mm
Murata Manufacturing Co., Ltd. GRM185R60J106ME15 10 μF 6.3 V 1.6 mm × 0.8 mm × 0.5 mm
3. Inductor (L)
When selecting L, note the allowable current. If a current exceeding this allowable current flows through the inductor,
magnetic saturation may occur, and there may be risks which substantially lower efficiency and damage the IC as a
result of large current.
Therefore, select an inductor so that peak current value (IPK), even during overcurrent detection, does not exceed
the allowable current.
When prioritizing the load response, select an inductor with a small L value such as 2.2 μH. When prioritizing the
efficiency, select an inductor with a large L value such as 10 μH. IPK is calculated using the following expression.
IPK = IOUT + 1
2 × L × fSW × (VIN
−
VOUT) × VOUT
VIN
Table 12 Recommended Inductors (L) List
Manufacturer Part Number Inductance Rated
Current Dimensions (L × W × H)
ALPS ELECTRIC CO., LTD. GLUHK2R201A 2.2 μH 1700 mA 2.0 mm × 1.6 mm × 1.0 mm
Murata Manufacturing Co., Ltd. DFE201210S-2R2M=P2 2.2 μH 2000 mA 2.0 mm × 1.2 mm × 1.0 mm
Würth Elektronik GmbH & Co. KG 74438343022 2.2 μH 1100 mA 2.0 mm × 1.6 mm × 1.0 mm
Murata Manufacturing Co., Ltd. LQM2MPN2R2MGH 2.2 μH 1300 mA 2.0 mm × 1.6 mm × 0.9 mm
TDK Corporation MLP2016G2R2M 2.2 μH 850 mA 2.0 mm × 1.6 mm × 1.0 mm
Coilcraft, Inc. PFL2015-222ME 2.2 μH 1050 mA 2.2 mm × 1.45 mm × 1.5 mm
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
14
Board Layout Guidelines
Note the following cautions when determining the board layout for the S-85S1A Series.
• Place CIN as close to the VIN pin and the PVSS pin as possible.
• Make the VIN pattern and GND pattern as wide as possible.
• Place thermal vias in the GND pattern to ensure sufficient heat dissipation.
• Keep thermal vias near CIN and COUT approximately 3 mm to 4 mm away from capacitor pins.
• Large current flows through the SW pin. Make the wiring area of the pattern to be connected to the SW pin small to
minimize parasitic capacitance and emission noise.
• Do not wire the SW pin pattern under the IC.
Total size 2.0 mm × 4.5 mm = 9.0 mm2
Figure 8 Reference Board Pattern
Caution The above pattern diagram does not guarantee successful operation. Perform thorough evaluation
using the actual application to determine the pattern.
Remark Refer to the land drawing of SNT-6A and "SNT Package User's Guide".
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
15
Precautions
• Mount external capacitors and inductors as close as possible to the IC, and make single GND.
• Characteristic ripple voltage and spike noise occur in the IC containing switching regulators. Moreover rush current
flows at the time of a power supply injection. Because these largely depend on the inductor, the capacitor and
impedance of power supply to be used, fully check them using an actually mounted model.
• The 10 μF capacitor connected between the VIN pin and the VSS pin is a bypass capacitor. It stabilizes the power
supply in the IC when application is used with a heavy load, and thus effectively works for stable switching
regulator operation. Allocate the bypass capacitor as close to the IC as possible, prioritized over other parts.
• Although the IC contains a static electricity protection circuit, static electricity or voltage that exceeds the limit of
the protection circuit should not be applied.
• The power dissipation of the IC greatly varies depending on the size and material of the board to be connected.
Perform sufficient evaluation using an actual application before designing.
• ABLIC Inc. assumes no responsibility for the way in which this IC is used on products created using this IC or for
the specifications of that product, nor does ABLIC Inc. assume any responsibility for any infringement of patents or
copyrights by products that include this IC either in Japan or in other countries.
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
16
Characteristics (Typical Data)
1. Example of major power supply dependence characteristics (Ta = +25°C)
1. 1 Current consumption during switching off (I
SS1
)
vs. Input voltage (V
IN
)
1. 2 Current consumption during shutdown (ISSS)
vs. Input voltage (VIN)
5.52.0
V
IN
[V]
I
SS1
[nA]
5.04.54.03.53.02.5
500
400
300
200
100
0
5.52.0
V
IN
[V]
I
SSS
[nA]
5.04.54.03.53.02.5
100
80
60
40
20
0
1. 3 Output voltage (VOUT) vs. Input voltage (VIN)
VOUT
(
S
)
= 1.2 V
1. 4 Output voltage (VOUT) vs. Input voltage (VIN)
VOUT
(
S
)
= 1.8 V
5.52.0
1.170
V
IN
[V]
V
OUT
[V]
5.04.54.03.53.02.5
1.230
1.220
1.210
1.200
1.190
1.180
5.52.0
V
IN
[V]
V
OUT
[V]
5.04.54.03.53.02.5
1.840
1.820
1.800
1.780
1.760
1. 5 Output voltage (VOUT) vs. Input voltage (VIN)
VOUT
(
S
)
= 2.5 V
5.52.0
V
IN
[V]
V
OUT
[V]
5.04.54.03.53.02.5
2.600
2.400
2.200
2.000
1.800
1. 6 ON time (tON) vs. Input voltage (VIN)
VOUT
(
S
)
= 1.8 V
1. 7 Switching frequency (f
SW
) vs. Input voltage (V
IN
)
VOUT
(
S
)
= 1.8 V
5.52.0
V
IN
[V]
t
ON
[s]
5.04.54.03.53.02.5
1.0
0.8
0.6
0.4
0.2
0.0
5.52.0
V
IN
[V]
f
SW
[MHz]
5.04.54.03.53.02.5
1.4
1.2
1.0
0.8
0.6
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
17
1. 8 Soft-start wait time (tSSW) vs. Input voltage (VIN)1. 9 Soft-start time (tSS) vs. Input voltage (VIN)
5.52.0
V
IN
[V]
t
SSW
[ms]
5.04.54.03.53.02.5
2.50
2.00
1.50
1.00
0.50
0.00
5.52.0
V
IN
[V]
t
SS
[ms]
5.04.54.03.53.02.5
2.50
2.00
1.50
1.00
0.50
0.00
1. 10 High side power MOS FET on-resistance (R
HFET
)
vs. Input voltage (V
IN
)
1. 11 Low side power MOS FET on-resistance (R
LFET
)
vs. Input voltage (V
IN
)
5.52.0
V
IN
[V]
R
HFET
[m]
5.04.54.03.53.02.5
800
700
600
500
400
300
200
100
0
5.52.0
V
IN
[V]
R
HFET
[m]
5.04.54.03.53.02.5
800
700
600
500
400
300
200
100
0
1. 12 High side power MOS FET leakage current (I
HSW
)
vs. Input voltage (V
IN
)
1. 13 Low side power MOS FET leakage current (I
LSW
)
vs. Input voltage (V
IN
)
5.52.0
V
IN
[V]
I
HSW
[nA]
5.04.54.03.53.02.5
100
80
60
40
20
0
5.52.0
V
IN
[V]
I
LSW
[nA]
5.04.54.03.53.02.5
100
80
60
40
20
0
1. 14 High level input voltage (V
SH
) vs. Input voltage (V
IN
)
1. 15
Low level input voltage (V
SL
) vs. Input voltage (V
IN
)
5.52.0
0.0
V
IN
[V]
V
SH
[V]
5.04.54.03.53.02.5
1.2
1.0
0.8
0.6
0.4
0.2
5.52.0
0.0
V
IN
[V]
V
SL
[V]
5.04.54.03.53.02.5
1.2
1.0
0.8
0.6
0.4
0.2
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
18
2. Example of major temperature characteristics (Ta = −40°C to +85°C)
2. 1 Current consumption during switching off (I
SS1
)
vs. Temperature (Ta)
2. 2 Current consumption during shutdown (ISSS)
vs. Temperature (Ta)
0
500
I
SS1
[nA]
−
40 8
5
7550250
−
25
Ta [C]
400
300
200
100
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
0
200
I
SSS
[nA]
−
40 8
5
7550250
−
25
Ta [C]
150
100
50
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
2. 3 Output voltage (VOUT) vs. Temperature (Ta)
VOUT
(
S
)
= 1.2 V
2. 4 Output voltage (VOUT) vs. Temperature (Ta)
VOUT
(
S
)
= 1.8 V
1.170
1.230
V
OUT
[V]
−
40 8
5
7550250
−
25
Ta [C]
1.220
1.210
1.200
1.190
1.180
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
1.760
1.840
V
OUT
[V]
−
40 8
5
7550250
−
25
Ta [C]
1.820
1.800
1.780
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
2. 5 Output voltage (VOUT) vs. Temperature (Ta)
VOUT
(
S
)
= 2.5 V
2.440
2.560
V
OUT
[V]
40 857550250
25
Ta [C]
2.540
2.520
2.500
2.480
2.460
V
DD
= 5.5 V
V
DD
= 3.6 V
2. 6 ON time (tON) vs. Temperature (Ta) 2. 7 Switching frequency (fSW) vs. Temperature (Ta)
0.0
1.2
t
ON
[s]
−
40 8
5
7550250
−
25
Ta [C]
1.0
0.8
0.6
0.4
0.2
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
−
40 8
5
7550250
−
25
Ta [C]
f
SW
[MHz]
1.4
1.2
1.0
0.8
0.6
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
19
2. 8 Soft-start wait time (tSSW) vs. Temperature (Ta) 2. 9 Soft-start time (tSS) vs. Temperature (Ta)
40 857550250
25
Ta [C]
t
SSW
[ms]
2.50
2.00
1.50
1.00
0.50
0.00
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
40 857550250
25
Ta [C]
t
SS
[ms]
2.50
2.00
1.50
1.00
0.50
0.00
V
DD
= 2.2 V
V
DD
= 5.5 V V
DD
= 3.6 V
2. 10 High side power MOS FET on-resistance (R
HFET
)
vs. Temperature (Ta)
2. 11 Low side power MOS FET on-resistance (R
LFET
)
vs. Temperature (Ta)
40 85755025025
Ta [C]
R
HFET
[m]
800
700
600
500
400
300
200
100
0
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
40 85755025025
Ta [C]
R
LFET
[m]
800
700
600
500
400
300
200
100
0
V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
2. 12 High side power MOS FET leakage current (I
HSW
)
vs. Temperature (Ta)
2. 13 Low side power MOS FET leakage current (I
LSW
)
vs. Temperature (Ta)
−
40 8
5
7550250
−
25
Ta [C]
I
HSW
[nA]
0
300
250
200
150
100
50
V
DD
= 5.5 V
V
DD
= 3.6 V
V
DD
= 2.2 V
−
40 8
5
7550250
−
25
Ta [C]
I
LSW
[nA]
0
300
250
200
150
100
50
V
DD
= 5.5 V
V
DD
= 3.6 V
V
DD
= 2.2 V
2. 14 High level input voltage (V
SH
) vs. Temperature (Ta) 2. 15 Low level input voltage (V
SL
) vs. Temperature (Ta)
−
40 8
5
7550250
−
25
Ta [C]
V
SH
[V]
0.0
1.2
1.0
0.8
0.6
0.4
0.2
V
DD
= 5.5 V
V
DD
= 3.6 V
V
DD
= 2.2 V
40 857550250
25
Ta [C]
V
SL
[V]
0.0
1.2
1.0
0.8
0.6
0.4
0.2 V
DD
= 2.2 V
V
DD
= 5.5 V
V
DD
= 3.6 V
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
20
2. 16 UVLO detection voltage (V
UVLO
−
) vs. Temperature (Ta) 2. 17 UVLO release voltage (V
UVLO
+
) vs. Temperature (Ta)
40 857550250
25
Ta [C]
V
UVLO
[V]
1.6
2.2
2.1
2.0
1.9
1.8
1.7
40 857550250
25
Ta [C]
V
UVLO
[V]
1.6
2.2
2.1
2.0
1.9
1.8
1.7
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
21
3. Transient response characteristics
The external parts shown in Table 13 are used in "3. Transient response characteristics".
Table 13
Element Name Constant Manufacturer Part Number
Inductor 2.2 μH ALPS ELECTRIC CO., LTD. GLUHK2R201A
Input capacitor 10 μF TDK Corporation C1608X5R0J106K080AB
Output capacitor 10 μF TDK Corporation C1608X5R0J106K080AB
3. 1 Power-on (VOUT = 1.8 V, VIN = 0 V → 3.6 V, Ta = +25°C)
3. 1. 1 IOUT = 0.1 mA
3. 1. 2 IOUT = 200 mA
5
Time [ms]
43210
4
3
2
1
0
1
2
3
4
I
L
[mA]
700
600
500
400
300
200
100
0
100
V
IN
[V], V
OUT
[V]
V
OUT
I
L
V
IN
5
Time [ms]
43210
4
3
2
1
0
1
2
3
4
IL [mA]
700
600
500
400
300
200
100
0
100
V
IN
[V], V
OUT
[V]
V
OUT
I
L
V
IN
3. 2 Transient response characteristics of EN pin
(VOUT = 1.8 V, VIN = 3.6 V, VEN = 0 V → 3.6 V, Ta = +25°C)
3. 2. 1 IOUT = 0.1 mA
3. 2. 2 IOUT = 200 mA
5
Time [ms]
43210
4
3
2
1
0
1
2
3
4
I
L
[mA]
700
600
500
400
300
200
100
0
100
V
EN
[V], V
OUT
[V]
V
OUT
I
L
V
EN
5
Time [ms]
43210
4
3
2
1
0
1
2
3
4
IL [mA]
700
600
500
400
300
200
100
0
100
V
EN
[V], V
OUT
[V]
V
OUT
I
L
V
EN
3. 3 Power supply fluctuation (VOUT = 1.8 V, Ta = +25°C)
3. 3. 1 IOUT = 0.1 mA
3. 3. 2 IOUT = 200 mA
V
IN = 3.6 V → 4.2 V → 3.6 V VIN = 3.6 V → 4.2 V → 3.6 V
50
Time [ms]
403020100
5
4
3
2
1
VOUT [V]
2.10
2.00
1.90
1.80
1.70
V
IN
[V]
V
OUT
V
IN
50
Time [ms]
403020100
5
4
3
2
1
VOUT [V]
2.10
2.00
1.90
1.80
1.70
V
IN
[V]
V
OUT
V
IN
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
22
3. 4 Load fluctuation (VOUT = 1.8 V, VIN = 3.6 V, Ta = +25°C)
3. 4. 1 IOUT = 0.1 mA → 10 mA → 0.1 mA
3. 4. 2 IOUT = 0.1 mA → 200 mA → 0.1 mA
1.0
Time [ms]
0.80.60.40.20.0
30
V
OUT
[V]
2.00
20 1.95
10 1.90
01.85
10 1.80
20 1.75
30 1.70
I
OUT
[mA]
V
OUT
I
OUT
1.0
Time [ms]
0.80.60.40.20.0
300
V
OUT
[V]
2.00
200 1.95
100 1.90
01.85
100 1.80
200 1.75
300 1.70
I
OUT
[mA]
V
OUT
I
OUT
Reference Data
The external parts shown in Table 14 are used in " Reference Data".
Table 14
Condition Inductor (L) Input Capacitor (CIN) Output Capacitor (COUT)
<1> GLUHK2R201A (2.2
μ
H)
ALPS ELECTRIC CO., LTD
C1005X5R0J106M050BC (10
μ
F)
TDK Corporation
C1005X5R0J106M050BC (10
μ
F)
TDK Corporation
<2> DFE201210S (2.2
μ
H)
Toko Ink.
C1005X5R0J106M050BC (10
μ
F)
TDK Corporation
C1005X5R0J106M050BC (10
μ
F)
TDK Corporation
1. VOUT = 1.2 V (External parts: Condition<1>)
1. 1 Efficiency (η) vs. Output current (IOUT) 1. 2 Output voltage (VOUT) vs. Output current (IOUT)
[%]
I
OUT
[mA]
0.01 0.1 10.001 10010
0
100
80
60
40
20
V
IN
= 3.6 V
V
IN
= 5.5 V
V
OUT
[V]
I
OUT
[mA]
0.01 0.1 10.001 10010
1.0
1.5
1.4
1.3
1.2
1.1 V
IN
= 3.6 V
V
IN
= 5.5 V
2. VOUT = 1.8 V (External parts: Condition<1>)
2. 1 Efficiency (η) vs. Output current (IOUT) 2. 2 Output voltage (VOUT) vs. Output current (IOUT)
[%]
I
OUT
[mA]
0.01 0.1 10.001 10010
0
100
80
60
40
20
V
IN
= 3.6 V
V
IN
= 5.5 V
V
OUT
[V]
I
OUT
[mA]
0.01 0.1 10.001 10010
1.5
2.0
1.9
1.8
1.7
1.6
V
IN
= 3.6 V
V
IN
= 5.5 V
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
Rev.1.4_00 S-85S1A Series
23
3. VOUT = 1.2 V (External parts: Condition<2>)
3. 1 Efficiency (η) vs. Output current (IOUT) 3. 2 Output voltage (VOUT) vs. Output current (IOUT)
[%]
I
OUT
[mA]
0.01 0.1 10.001 10010
0
100
80
60
40
20
V
IN
= 3.6 V
V
IN
= 5.5 V
V
OUT
[V]
I
OUT
[mA]
0.01 0.1 10.001 10010
1.0
1.5
1.4
1.3
1.2
1.1 V
IN
= 3.6 V
V
IN
= 5.5 V
4. VOUT = 1.8 V (External parts: Condition<2>)
4. 1 Efficiency (η) vs. Output current (IOUT) 4. 2 Output voltage (VOUT) vs. Output current (IOUT)
[%]
I
OUT
[mA]
0.01 0.1 10.001 10010
0
100
80
60
40
20
V
IN
= 3.6 V
V
IN
= 5.5 V
V
OUT
[V]
I
OUT
[mA]
0.01 0.1 10.001 10010
1.5
2.0
1.9
1.8
1.7
1.6
V
IN
= 3.6 V
V
IN
= 5.5 V
5.5 V INPUT, 200 mA SYNCHRONOUS STEP-DOWN SWITCHING REGULATOR WITH 260 nA QUIESCENT CURRENT
S-85S1A Series Rev.1.4_00
24
Power Dissipation
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
Ambient temperature (Ta) [C]
Power dissipation (PD) [W]
Tj = 125C max.
SNT-6A
B
A
Board Power Dissipation (PD)
A 0.45 W
B 0.57 W
C −
D −
E −
(1)
1
2
3
4
(2)
1
2
3
4
Board B
Item Specification
Thermal via -
Material FR-4
Number of copper foil layer 4
Copper foil layer [mm]
Land pattern and wiring for testing: t0.070
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.035
74.2 x 74.2 x t0.070
Size [mm] 114.3 x 76.2 x t1.6
2
Copper foil layer [mm]
Land pattern and wiring for testing: t0.070
-
-
74.2 x 74.2 x t0.070
Thermal via -
Material FR-4
Board A
Item Specification
Size [mm] 114.3 x 76.2 x t1.6
Number of copper foil layer
ICMountArea
SNT-6A Test Board
No. SNT6A-A-Board-SD-1.0
ABLIC Inc.
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
mm
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.1
No. PG006-A-P-SD-2.1
0.2±0.05
0.48±0.02
0.08 +0.05
-0.02
0.5
1.57±0.03
123
45
6
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.85±0.05 0.65±0.05
0.25±0.05
mm
PG006-A-C-SD-2.0
SNT-6A-A-Carrier Tape
No. PG006-A-C-SD-2.0
+0.1
-0
1
2
4
3
56
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY.
No. PG006-A-R-SD-1.0
PG006-A-R-SD-1.0
Enlarged drawing in the central part
SNT-6A-A-Reel
5,000
mm
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
mm
SNT-6A-A
-Land Recommendation
PG006-A-L-SD-4.1
No. PG006-A-L-SD-4.1
0.3
0.2
0.52
1.36
0.52
1
2
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
1.
2. (1.30 mm ~ 1.40 mm)
(0.25 mm min. / 0.30 mm typ.)
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other
right due to the use of the information described herein.
3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described
herein.
4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to
the use of the products outside their specified ranges.
5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related
laws, and follow the required procedures.
7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,
biological or chemical weapons or missiles, or use any other military purposes.
8. The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.
9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products are
allowed to apply for the system on customer's own responsibility.
10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this
document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07
www.ablic.com
