TOSHIBA 25J109 TOSHIBA FIELD EFFECT TRANSISTOR SILICON MONOLITHIC P CHANNEL JUNCTION TYPE 2$J109 LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm DIFFERENTIAL AMPLIFIER APPLICATIONS 95403 1 Chip Dual Type 30 JOON rons] | | z z e High [Yz| : [Y.]=22mS (Typ.) 2:28 = 210 | | lS (Vps=-10V, Vag=0, f=1kHz, Ipgs= _3mA) [1.27 0.20 =) @ Good Pair Characteristics : [Vag1-Vagg|=20mV (Max.) ae : e (Vpg=10V, Ip= 1mA) Lev Hr on emt 1234567 @ Very Low Noise : NF=0.5dB (Typ.) (Vps= 10V, Ip=1mA, 1. DRAIN 1 5. SOURCE 2 Rq@=1kQ, f=1kHz) 2. GATE 1 6. GATE 2 3. SOURCE 1 7. DRAIN 2 @ Very High Input Impedance : Igg=1.0nA (Max.) 4. SUBSTRATE _ _ (Use the substrate (Vas=30V, Vps=0) lead with apen) e Complementary to 28K389 JEDEC _ EIAJ TOSHIBA 2-10M1A MAXIMUM RATINGS (Ta = 25C) Weight : 0.37g (Typ.) CHARACTERISTIC SYMBOL RATING | UNIT Gate-Drain Voltage Vaps 30 Vv Gate Current Ig 10 mA Drain Power Dissipation Pp 200 mW Junction Temperature Tj 125 C Storage Temperature Range Tstg 55~125 C 961001 EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-04-10 1/5 TOSHIBA 255109 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Gate Cut-off Current Igss Vas=s0Vv, Vps=0 1.0] nA Gate-Drain Breakdown _ _ Voltage V (BR) GDS | VpS=9, Iq=100nA 30; | | Vv Drain Current Ipss * Vps=-10V, Vas=0 -2.6| 20| mA Gate-Source Cut-off Voltage | VGS (OFF) | VDS=10V, Ip=0.1uA 0.2) 2.0) V Forward Transfer Vps=10V, Vas=0, Admittance [Yas f=1kHz, Ipngg= 3mA 8) 22 | | mS Drain Current Ratio Ipss/Tpss Vps=-10V, Vas=0 09) _ (small) (arge) Forward Transfer lYesl/ls1 | Vpg=10V, Vag=0, 09 Admittance Ratio (small) (large) |f=1kHz . ~ ~ ~ Differential Gate-Source Voltage IVas1Vasal] Vps=10V, Ip=1mA _ 20 | mV . . Vps=10V, Vas=0, Input Capacitance Cigg f= 1MUz 95 pF Reverse Transfer Capacitance Crss_ | VQD = 10V, Ip=0, f=1MHz | | 25 | | pF NF) | YDS=10V, Ip=1mA, | 15 11 oo RG =1kO, f=10Hz Noise Figure dB Vps=-10V, Ip=1mA, NF@) |Rg=1k0, f=1kHz | 05 2 * Ings Classification : GR=-2.6~-6.5mA, BL=-6~-12mA, V=-10~-20mA 1997-04-10 2/5 TOSHIBA [ggl Gn) FORWARD TRANSFER ADMITTANCE INPUT CAPACITANCE Cisg (pF) STATIC CHARACTERISTICS < COMMON SOURCE ~ Ta =25C A & Vos= EK a i fe me _ 5 g = 0.2 a 0.3 0.4 0.6 0.4 0.2 0 -10 -20 -30 40 GATE-SOURCE DRAIN-SOURCE VOLTAGE VOLTAGE Vag (V) Vos (W) lYts| - IDSs 200 COMMON SOURCE Ipss : Vps=10V 100 Vas=0 [Ygl : Vpg=10V Vas=0 f=1kHz y 50) Ta=25C ra aT La 30) 4 | 1 10 -1 -3 10 30 DRAIN CURRENT Ipgg (mA) Ciss VDS COMMON SOURCE Ves=0 f=1MHz Ta=25C -05 1 -3 -10 30 DRAIN-SOURCE VOLTAGE Vpg (Vv) DRAIN CURRENT Ip (mA) GATE-SOURCE CUT-OFF VOLTAGE Vasiorr) (Vv) (pF) REVERSE TRANSFER CAPACITANCE TSS 285109 Ip - Vps (LOW VOLTAGE REGION) COMMON SOURCE Ta=25C Vag=0v -2 -4 -6 -8 10 -12 DRAIN-SOURCE VOLTAGE Vps (V) VGS (OFF) IDSS COMMON SOURCE : Vpg=10V Vas=0 Vos (OFF): Vps=-10V Ip=-0.1pA Ta=25C -3 -10 -30 DRAIN CURRENT Ipss (mA) Crss VGD COMMON SOURCE Ip=0 f=1MHz Ta=25C 1 3 10 30 GATE-DRAIN VOLTAGE Vap (Vv) 1997-04-10 3/5 TOSHIBA 285109 FORWARD TRANSFER ADMITTANCE Iz,l (mS) GATE EXCESS CURRENT Iqsx (A) NOISE FIGURE NF (dB) lYfs| ID COMMON SOURCE Vpg=10V f=1kHz Ta =25C 0 -4 -8 -12 -16 -20 -24 ~28 DRAIN CURRENT Ip (mA) Igsx VDS COMMON SOURCE Ta=25C SE A VDS Ip=-10mA -4 -8 -12 -16 20 24 28 DRAIN-SOURCE VOLTAGE Vps (V) NF f COMMON SOURCE Vps= 10V Ip=-1mA Ta=25C Rq=5002. 1kQ, 10k 10 100 1k 10k 100k FREQUENCY f (Hz) 2) EQUIVALENT INPUT NOISE VOLTAGE En (nV/VEH (dB) NOISE FIGURE NF Ip Vas COMMON SOURCE Vps= 10V Ta=25C 0.6 -0.1 Ipsg=-13.4 DRAIN CURRENT Ip (mA) 0.5 0.4 0.3 0.2 0.1 0 GATE-SOURCE VOLTAGE Vgs (V) Ey Ip COMMON SOURCE Vps= 10V f=1kHz Ta=25C -0.3 -1 -3 -10 DRAIN CURRENT Ip (mA) NF Ip COMMON SOURCE Vps= 10V Rq@=1k0, Ta=25C -4 -8 -12 -16 20 DRAIN CURRENT Ip (mA) 1997-04-10 4/5 TOSHIBA 285109 NOISE FIGURE NF (dB) NF Vps COMMON SOURCE Ip=-1mA Rqg=1kQ Ta=25C 1kHz -4 -8 -12 -16 -20 -24 -28 32 DRAIN-SOURCE VOLTAGE Vpg (V) NOISE FIGURE NF (dB) NF Rg COMMON SOURCE Vps=10V Ip=-1lmA Ta =25C 100 1k 10k 100k 1M SIGNAL SOURCE RESISTANCE Rg (Q) 1997-04-10 5/5