LT3844
1
3844fc
For more information www.linear.com/LT3844
Typical applicaTion
FeaTures
applicaTions
DescripTion
High Voltage, Current Mode
Switching Regulator Controller with
Programmable Operating Frequency
n Industrial Power Distribution
n 12V and 42V Automotive and Heavy Equipment
n High Voltage Single Board Systems
n Distributed Power Systems
n Avionics
n Telecom Power
High Voltage Step-Down Regulator 48V to 12V, 50W Efficiency and Power Loss
vs Load Current
n High Voltage Operation: Up to 60V
n Output Voltages Up to 36V (Step Down)
n Programmable Constant Frequency: 100kHz to
500kHz
n Synchronizable up to 600kHz
n Burst Mode
®
Operation: 120µA Supply Current
n 10µA Shutdown Supply Current
n ±1.3% Reference Accuracy
n Drives N-Channel MOSFET
n Programmable Soft-Start
n Programmable Undervoltage Lockout
n Internal High Voltage Regulator for Gate Drive
n Thermal Shutdown
n Current Limit Unaffected by Duty Cycle
n 16-Pin Thermally Enhanced TSSOP Package
The LT
®
3844 is a DC/DC controller used for medium power,
low part count, high efficiency supplies. It offers a wide
4V to 60V input range (7.5V minimum start-up voltage)
and can implement step-down, step-up, inverting and
SEPIC topologies.
The LT3844 includes Burst Mode operation, which reduces
quiescent current below 120µA and maintains high effi-
ciency at light loads. An internal high voltage bias regulator
allows for simple biasing.
Additional features include current mode control for fast
line and load transient response; programmable fixed
operating frequency that can be synchronized to an ex-
ternal clock for noise sensitive applications; a gate driver
capable of driving large N-channel MOSFETs; a precision
undervoltage lockout function; 10µA shutdown current;
short-circuit protection and a programmable soft-start
function.
The LT3844 is available in a 16-lead thermally enhanced
TSSOP package.
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
Burst Mode is a registered trademark of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
Protected by U.S. Patents, including 5731694, 6498466, 6611131
VIN
SHDN
CSS
BURST_EN
VFB
VC
SYNC
fSET
BOOST
TG
SW
VCC
PGND
SENSE+
SENSE
SGND
LT3844
3844 TA01
R7
49.9k
V
OUT
12V
50W
68µF
680p
22µF
120pF
68µF
10k
10Ω
1000pF
0.22µF
10µH
33µF
0.015Ω
14.7k
130k
82.5k
1M
1µF
PDS5100H
Si7850DP
V
IN
36V TO 60V
LOAD CURRENT (A)
76
82
80
78
90
88
86
84
0
3
2
1
7
6
5
4
3844 TA01b
EFFICIENCY (%)
POWER LOSS (W)
0.1 10
1
LOSS
EFFICIENCY
VIN = 48V
LT3844
2
3844fc
For more information www.linear.com/LT3844
pin conFiguraTionabsoluTe MaxiMuM raTings
(Note 1)
FE PACKAGE
16-LEAD PLASTIC TSSOP
1
2
3
4
5
6
7
8
TOP VIEW
16
15
14
13
12
11
10
9
VIN
SHDN
CSS
BURST_EN
VFB
VC
SYNC
fSET
BOOST
TG
SW
VCC
PGND
SENSE
+
SENSE
SGND
17
TJMAX = 125°C, θJA = 40°C/W, θJC = 10°C/W
EXPOSED PAD (PIN 17) IS SGND, MUST BE SOLDERED TO PCB
orDer inForMaTion
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LT3844EFE#PBF LT3844EFE#TRPBF 3844EFE 16-Lead Plastic TSSOP –40°C to 125°C
LT3844IFE#PBF LT3844IFE#TRPBF 3844IFE 16-Lead Plastic TSSOP –40°C to 125°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/. Some packages are available in 500 unit reels through
designated sales channels with #TRMPBF suffix.
Input Supply Voltage (VIN) ......................... 65V to 0.3V
Boosted Supply Voltage (BOOST) .............. 80V to 0.3V
Switch Voltage (SW) (Note 8) ........................65V to 1V
Differential Boost Voltage
BOOST to SW ........................................ 24V to 0.3V
Bias Supply Voltage (VCC) .......................... 24V to 0.3V
SENSE+ and SENSE Voltages ................... 40V to 0.3V
Differential Sense Voltage
SENSE+ to SENSE ......................................1V to 1V
BURST_EN Voltage .................................... 24V to 0.3V
SYNC, VC, VFB, CSS and SHDN Voltages ...... 5V to 0.3V
SHDN Pin Currents ..................................................1mA
Operating Junction Temperature Range (Note 2)
LT3844E (Note 3) .............................. 40°C to 125°C
LT3844I ............................................. 40°C to 125°C
Storage Temperature.............................. 65°C to 150°C
Lead Temperature (Soldering, 10 sec) ................... 300°C
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 20V, VCC = BOOST = BURST_EN = 10V, SHDN = 2V, RSET = 49.9k,
SENSE = SENSE+ = 10V, SGND = PGND = SW = SYNC = 0V, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
VIN Operating Voltage Range (Note 4)
VIN Minimum Start Voltage
VIN UVLO Threshold (Falling)
VIN UVLO Threshold Hysteresis
l
l
l
4
3.6
3.8
670
60
7.5
4
V
V
V
mV
VIN Supply Current
VIN Burst Mode Current
VIN Shutdown Current
VCC > 9V
VBURST_EN = 0V, VFB = 1.35V
VSHDN = 0V
20
20
10
15
µA
µA
µA
BOOST Operating Voltage Range
BOOST Operating Voltage Range (Note 5)
BOOST UVLO Threshold (Rising)
BOOST UVLO Threshold Hysteresis
VBOOST – VSW
VBOOST – VSW
VBOOST – VSW
l
l
5
400
75
20
V
V
V
mV
BOOST Supply Current (Note 6)
BOOST Burst Mode Current
BOOST Shutdown Current
VBURST_EN = 0V
VSHDN = 0V
1.4
0.1
0.1
mA
µA
µA
http://www.linear.com/product/LT3844#orderinfo
LT3844
3
3844fc
For more information www.linear.com/LT3844
elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 20V, VCC = BOOST = BURST_EN = 10V, SHDN = 2V, RSET = 49.9k,
SENSE = SENSE+ = 10V, SGND = PGND = SW = SYNC = 0V, unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
VCC Operating Voltage Range (Note 5)
VCC Output Voltage
VCC UVLO Threshold (Rising)
VCC UVLO Threshold Hysteresis
Over Full Line and Load Range
l
l
8
6.25
500
20
8.3
V
V
V
mV
VCC Supply Current (Note 6)
VCC Burst Mode Current
VCC Shutdown Current
VCC Current Limit
VBURST_EN = 0V
VSHDN = 0V
l
l
–40
1.7
95
20
–120
2.1 mA
µA
µA
mA
Error Amp Reference Voltage Measured at VFB Pin
l
1.224
1.215
1.231 1.238
1.245
V
V
VFB Pin Input Current VFB = 1.231V 25 nA
SHDN Enable Threshold (Rising)
SHDN Threshold Hysteresis
l1.3 1.35
120
1.4 V
mV
Sense Pins Common Mode Range
Current Limit Sense Voltage
VSENSE+ – VSENSE
l
l
0
90
100
36
115
V
mV
Input Current
(ISENSE+ + ISENSE)
VSENSE(CM) = 0V
VSENSE(CM) = 2V
VSENSE(CM) > 4V
350
–25
–170
µA
µA
µA
Operating Frequency
l
290
270
300 310
330
kHz
kHz
Minimum Programmable Frequency
Maximum Programmable Frequency
l
l
500
100 kHz
kHz
External Sync Frequency Range l100 600 kHz
SYNC Input Resistance 40
SYNC Voltage Threshold l1.4 2 V
Soft-Start Capacitor Control Current 2 µA
Error Amp Transconductance l270 340 410 µS
Error Amp DC Voltage Gain 62 dB
Error Amp Sink/Source Current ±30 µA
TG Drive On Voltage (Note 7)
TG Drive Off Voltage
CLOAD = 2200pF
CLOAD = 2200pF
9.8
0.1
V
V
TG Drive Rise/Fall Time 10% to 90% or 90% to 10%, CLOAD = 2200pF 40 ns
Minimum TG Off Time l350 500 ns
Minimum TG On Time l250 350 ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT3844 includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 3: The LT3844E is guaranteed to meet performance specifications from
0°C to 125°C junction temperature. Specifications over the 40°C to 125°C
operating junction temperature range are assured by design, characterization
and correlation with statistical process controls. The LT3844I is guaranteed
over the full 40°C to 125°C operating junction temperature range.
Note 4: VIN voltages below the start-up threshold (7.5V) are only
supported when the VCC is externally driven above 6.5V.
Note 5: Operating range is dictated by MOSFET absolute maximum VGS.
Note 6: Supply current specification does not include switch drive
currents. Actual supply currents will be higher.
Note 7: DC measurement of gate drive output “ON” voltage is typically
8.6V. Internal dynamic bootstrap operation yields typical gate “ON”
voltages of 9.8V during standard switching operation. Standard operation
gate “ON” voltage is not tested but guaranteed by design.
Note 8: The –1V absolute maximum on the SW pin is a transient condition.
It is guaranteed by design and not subject to test.
LT3844
4
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For more information www.linear.com/LT3844
3844 G01
SHUTDOWN THRESHOLD, RISING (V)
1.38
1.37
1.36
1.35
1.34
1.33
1.32
TEMPERATURE (°C)
–50 25 75
3844 G02
–25 0 50 100 125
TEMPERATURE (°C)
–50
SHUTDOWN THRESHOLD, FALLING (V)
1.26
1.25
1.24
1.23
1.22
1.21
1.20 25 75–25 0 50 100 125
3844 G05
VIN (V)
VCC (V)
9
8
7
6
5
4
34689
5 7 10 11 12
3844 G07
TEMPERATURE (°C)
–50 25 75–25 0 50 100 125
3844 G08
VCC UVLO THRESHOLD, RISING (V)
6.5
6.4
6.3
6.2
6.1
6.0
TEMPERATURE (°C)
–50
ERROR AMP TRANSCONDUCTANCE (µS)
350
345
340
335
330
325
320 25 75
3844 G09
–25 0 50 100 125
ICC = 20mA
TA = 25°C
TEMPERATURE (°C)
–50 25 75–25 0 50 100 125
3844 G03
8.2
8.1
8.0
7.9
7.8
7.7
7.6
7.5
VCC (V)
ICC = 20mA
–50 –25 1000 50 12525 75
TEMPERATURE (°C)
200
175
150
125
100
75
50
3844 G06
ICC CURRENT LIMIT (mA)
ICC(LOAD) (mA)
0
V
CC
(V)
40
3844 G04
10 20 30
8.05
8.00
7.95
7.90
7.85 5 15 25 35
TA = 25°C
VCC (V)
0
ICC (mA)
15
20
25
16
10
5
02468 10 12 14 18 20
TA = 25°C
Typical perForMance characTerisTics
Shutdown Threshold (Rising)
vs Temperature
VCC vs Temperature
VCC vs ICC(LOAD) VCC vs VIN ICC Current Limit vs Temperature
VCC UVLO Threshold (Rising)
vs Temperature ICC vs VCC (SHDN = 0V)
Error Amp Transconductance
vs Temperature
Shutdown Threshold (Falling)
vs Temperature
LT3844
5
3844fc
For more information www.linear.com/LT3844
VSENSE (CM) (V)
0
I(SENSE+ + SENSE) (µA)
400
300
200
100
0
–100
–200 0.5 1.0 1.5 2.0
3844 G10
2.5 4.53.5 5.04.03.0
TEMPERATURE (°C)
–50 25 75
3844 G12
–25 0 50 100 125
TEMPERATURE (°C)
–50 25 75
–25 0 50 100 125
TEMPERATURE (°C)
–50 25 75
–25 0 50 100 125
1.234
1.233
1.232
1.231
1.230
1.229
1.228
1.227
ERROR AMP REFERENCE (V)
3844 G14 3844 G15
4.54
4.52
4.50
4.48
4.46
4.44
4.42
4.40
VIN UVLO THRESHOLD, RISING (V)
VIN UVLO THRESHOLD, FALLING (V)
3.86
3.84
3.82
3.80
3.78
3.76
TA = 25°C
TEMPERATURE (°C)
–50
CURRENT SENSE THRESHOLD (mV)
102
104
106
25 75
3844 G16
100
98
–25 0 50 100 125
96
94
TEMPERATURE (°C)
–50
290
OPERATING FREQUENCY (kHz)
292
296
298
300
50
308
3844 G17
294
0
–25 75 100
25 125
302
304
306
Typical perForMance characTerisTics
I(SENSE+ + SENSE) vs
VSENSE(CM)
Operating Frequency
vs Temperature
Error Amp Reference
vs Temperature
Maximum Current Sense
Threshold vs Temperature
VIN UVLO Threshold (Rising)
vs Temperature
VIN UVLO Threshold (Falling)
vs Temperature
LT3844
6
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For more information www.linear.com/LT3844
pin FuncTions
VIN (Pin 1): The VIN pin is the main supply pin and should
be decoupled to SGND with a low ESR capacitor located
close to the pin.
SHDN (Pin 2): The SHDN pin has a precision IC enable
threshold of 1.35V (rising) with 120mV of hysteresis. It is
used to implement an undervoltage lockout (UVLO) circuit.
See Applications Information section for implementing
a UVLO function. When the SHDN pin is pulled below
a transistor VBE (0.7V), a low current shutdown mode
is entered, all internal circuitry is disabled and the VIN
supply current is reduced to approximately 9µA. Typical
pin input bias current is <10µA and the pin is internally
clamped to 6V.
CSS (Pin 3): The soft-start pin is used to program the
supply soft-start function. Use the following formula to
calculate CSS for a given output voltage slew rate:
CSS = 2µA(tSS/1.231V)
The pin should be left unconnected when not using the
soft-start function.
BURST_EN (Pin 4): The BURST_EN pin is used to enable
or disable Burst Mode operation. Connect the BURST_EN
pin to ground to enable the burst mode function. Connect
the pin to VFB or VCC to disable the Burst Mode function.
VFB (Pin 5): The output voltage feedback pin, VFB, is exter-
nally connected to the supply output voltage via a resistive
divider. The VFB pin is internally connected to the inverting
input of the error amplifier. In regulation, VFB is 1.231V.
VC (Pin 6): The VC pin is the output of the error amplifier
whose voltage corresponds to the maximum (peak) switch
current per oscillator cycle. The error amplifier is typically
configured as an integrator circuit by connecting an RC
network from the VC pin to SGND. This circuit creates the
dominant pole for the converter regulation control loop.
Specific integrator characteristics can be configured to
optimize transient response. When Burst Mode operation
is enabled (see Pin 4 description), an internal low imped-
ance clamp on the VC pin is set at 100mV below the burst
threshold, which limits the negative excursion of the pin
voltage. Therefore, this pin cannot be pulled low with a
low impedance source. If the VC pin must be externally
manipulated, do so through a 1k series resistance.
SYNC (Pin 7): The SYNC pin provides an external clock
input for synchronization of the internal oscillator. RSET
is set such that the internal oscillator frequency is 10%
to 25% below the external clock frequency. If unused the
SYNC pin is connected to SGND. For more information see
Oscillator Sync” in the Applications Information section
of this data sheet.
fSET (Pin 8): The fSET pin programs the oscillator frequency
with an external resistor, RSET
. The resistor is required
even when supplying external sync clock signal. See the
Applications Information section for resistor value selec-
tion details.
SGND (Pin 9, 17): The SGND pin is the low noise ground
reference. It should be connected to the –VOUT side of the
output capacitors. Careful layout of the PCB is necessary
to keep high currents away from this SGND connection.
See the Applications Information section for helpful hints
on PCB layout of grounds.
SENSE (Pin 10): The SENSE pin is the negative input for
the current sense amplifier and is connected to the VOUT
side of the sense resistor for step-down applications. The
sensed inductor current limit is set to 100mV across the
SENSE inputs.
SENSE+ (Pin 11): The SENSE+ pin is the positive input for
the current sense amplifier and is connected to the induc-
tor side of the sense resistor for step-down applications.
The sensed inductor current limit is set to 100mV across
the SENSE inputs.
PGND (Pin 12): The PGND pin is the high current ground
reference for internal low side switch and the VCC regulator
circuit. Connect the pin directly to the negative terminal of
the VCC decoupling capacitor. See the Applications Informa-
tion section for helpful hints on PCB layout of grounds.
LT3844
7
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For more information www.linear.com/LT3844
pin FuncTions
VCC (Pin 13): The VCC pin is the internal bias supply
decoupling node. Use a low ESR 1µF or greater ceramic
capacitor to decouple this node to PGND. Most internal IC
functions are powered from this bias supply. An external
diode connected from VCC to the BOOST pin charges the
bootstrapped capacitor during the off-time of the main
power switch. Back driving the VCC pin from an external
DC voltage source, such as the VOUT output of the regula-
tor supply, increases overall efficiency and reduces power
dissipation in the IC. In shutdown mode this pin sinks
20µA until the pin voltage is discharged to 0V.
SW (Pin 14): In step-down applications the SW pin is
connected to the cathode of an external clamping Schottky
diode, the drain of the power MOSFET and the inductor.
The SW node voltage swing is from VIN during the on-
time of the power MOSFET, to a Schottky voltage drop
below ground during the off-time of the power MOSFET.
In start-up and in operating modes where there is insuf-
ficient inductor current to freewheel the Schottky diode, an
internal switch is turned on to pull the SW pin to ground
so that the BOOST pin capacitor can be charged. Give
careful consideration in choosing the Schottky diode to
limit the negative voltage swing on the SW pin.
TG (Pin 15): The TG pin is the bootstrapped gate drive for
the top N-Channel MOSFET. Since very fast high currents
are driven from this pin, connect it to the gate of the power
MOSFET with a short and wide, typically 0.02" width, PCB
trace to minimize inductance.
BOOST (Pin 16): The BOOST pin is the supply for the
bootstrapped gate drive and is externally connected to a
low ESR ceramic boost capacitor referenced to SW pin.
The recommended value of the BOOST capacitor, CBOOST
,
is 50 times greater than the total input capacitance of the
topside MOSFET. In most applications 0.1µF is adequate.
The maximum voltage that this pin sees is VIN + VCC,
ground referred.
Exposed Pad (Pin 17): SGND. The exposed leadframe is
internally connected to the SGND pin. Solder the exposed
pad to the PCB ground for electrical contact and optimal
thermal performance.
LT3844
8
3844fc
For more information www.linear.com/LT3844
FuncTional DiagraM
+
+
+
+
VIN
UVLO
(<4V)
BST
UVLO
8V
REGULATOR
FEEDBACK
REFERENCE
+
+
1.231V
3.8V
REGULATOR INTERNAL
SUPPLY RAIL
1
9
6
VIN VCC
UVLO
(<6V)
SHDN
DRIVE
CONTROL
NOL
SWITCH
LOGIC
DRIVE
CONTROL
BURST_EN
VC
CSS
SENSE
VFB
0.5V
2µA
50µA
Burst Mode
OPERATION
R
SQ
OSCILLATOR
SLOPE COMP
GENERATOR
BOOST
TG
SW
VCC
PGND
SYNC
fSET
RSET
SENSE+
SGND
BOOSTED SWITCH
DRIVER
CURRENT
SENSE
COMPARATOR
12
7
8
13
14
10
11
5
3
100mV
4
2
16
15
VREF + 200mV
SOFT-START
BURST DISABLE
DRIVER
FAULT CONDITION:
VIN UVLO
VCC UVLO
VSHDN UVLO
CSS CLAMPED TO
VFB + VBE
VREF
~1V
+
gm
ERROR
AMP
+
M1
D2
D3
D1
L1
(OPTIONAL)
RSENSE
3844 FD
CC2
CC1
R1
RA
RB
VIN
CIN
R2
CBOOST
VOUT
COUT
CVCC
RC
LT3844
9
3844fc
For more information www.linear.com/LT3844
operaTion
(Refer to Functional Diagram)
The LT3844 is a PWM controller with a constant frequency,
current mode control architecture. It is designed for low
to medium power, switching regulator applications. Its
high operating voltage capability allows it to step up
or down input voltages up to 60V without the need for
a transformer. The LT3844 is used in nonsynchronous
applications, meaning that a freewheeling rectifier diode
(D1 of Function Diagram) is used instead of a bottom
side MOSFET. For circuit operation, please refer to the
Functional Diagram of the IC and Typical Application on
the front page of the data sheet. The LT3800 is a similar
part that uses synchronous rectification, replacing the
diode with a MOSFET in a step-down application.
Main Control Loop
During normal operation, the external N-channel MOSFET
switch is turned on at the beginning of each cycle. The
switch stays on until the current in the inductor exceeds
a current threshold set by the DC control voltage, VC,
which is the output of the voltage control loop. The voltage
control loop monitors the output voltage, via the VFB pin
voltage, and compares it to an internal 1.231V reference.
It increases the current threshold when the VFB voltage
is below the reference voltage and decreases the current
threshold when the VFB voltage is above the reference
voltage. For instance, when an increase in the load current
occurs, the output voltage drops causing the VFB volt-
age to drop relative to the 1.231V reference. The voltage
control loop senses the drop and increases the current
threshold. The peak inductor current is increased until the
average inductor current equals the new load current and
the output voltage returns to regulation.
Current Limit/Short-Circuit
The inductor current is measured with a series sense
resistor (see the Typical Application on the front page).
When the voltage across the sense resistor reaches the
maximum current sense threshold, typically 100mV, the
TG MOSFET driver is disabled for the remainder of that
cycle. If the maximum current sense threshold is still ex-
ceeded at the beginning of the next cycle, the entire cycle
is skipped. Cycle skipping keeps the inductor currents to a
reasonable value during a short-circuit, particularly when
VIN is high. Setting the sense resistor value is discussed
in the “Application Information” section.
VCC/Boosted Supply
An internal VCC regulator provides VIN derived gate-drive
power for start-up under all operating conditions with
MOSFET gate charge loads up to 90nC. The regulator can
operate continuously in applications with VIN voltages up
to 60V, provided the power dissipation of the regulator
does not exceed 250mW. The power dissipation is cal-
culated as follows:
Pd(REG) = (VIN – 8V) fSW QG
where QG is the MOSFET gate charge.
In applications where these conditions are exceeded, VCC
must be derived from an external source after start-up.
Maximum continuous regulator power dissipation may be
exceeded for short duration VIN transients.
For higher converter efficiency and less power dissipa-
tion in the IC, VCC can also be supplied from an external
supply such as the converter output. When an external
supply back drives the internal VCC regulator through an
external diode and the VCC voltage is pulled to a diode
above its regulation voltage, the internal regulator is dis-
abled and goes into a low current mode. VCC is the bias
supply for most of the internal IC functions and is also
used to charge the bootstrapped capacitor (CBOOST) via an
external diode. The external MOSFET switch is biased from
the bootstrapped capacitor. While the external MOSFET
switch is off, an internal BJT switch, whose collector is
connected to the SW pin and emitter is connected to the
PGND pin, is turned on to pull the SW node to PGND and
recharge the bootstrap capacitor. The switch stays on until
either the start of the next cycle or until the bootstrapped
capacitor is fully charged.
MOSFET Driver
The LT3844 contains a high speed boosted driver to turn
on and off an external N-channel MOSFET switch. The
MOSFET driver derives its power from the boost capacitor
which is referenced to the SW pin and the source of the
MOSFET. The driver provides a large pulse of current to turn
on the MOSFET fast to minimize transition times. Multiple
MOSFETs can be paralleled for higher current operation.
LT3844
10
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For more information www.linear.com/LT3844
operaTion
(Refer to Functional Diagram)
To eliminate the possibility of shoot through between the
MOSFET and the internal SW pull-down switch, an adap-
tive nonoverlap circuit ensures that the internal pull-down
switch does not turn on until the gate of the MOSFET is
below its turn on threshold.
Low Current Operation (Burst Mode Operation)
To increase low current load efficiency, the LT3844 is
capable of operating in Linear Technology’s proprietary
Burst Mode operation where the external MOSFET operates
intermittently based on load current demand. The Burst
Mode function is disabled by connecting the BURST_EN pin
to VCC or VFB and enabled by connecting the pin to SGND.
When the required switch current, sensed via the VC pin
voltage, is below 15% of maximum, Burst Mode operation
is employed and that level of sense current is latched onto
the IC control path. If the output load requires less than
this latched current level, the converter will overdrive the
output slightly during each switch cycle. This overdrive
condition is sensed internally and forces the voltage on the
VC pin to continue to drop. When the voltage on VC drops
150mV below the 15% load level, switching is disabled,
and the LT3844 shuts down most of its internal circuitry,
reducing total quiescent current to 120µA. When the
converter output begins to fall, the VC pin voltage begins
to climb. When the voltage on the VC pin climbs back to
the 15% load level, the IC returns to normal operation
and switching resumes. An internal clamp on the VC pin
is set at 100mV below the output disable threshold, which
limits the negative excursion of the pin voltage, minimizing
the converter output ripple during Burst Mode operation.
During Burst Mode operation, the VIN pin current is 20µA
and the VCC current is reduced to 100µA. If no external
drive is provided for VCC, all VCC bias currents originate
from the VIN pin, giving a total VIN current of 120µA. Burst
current can be reduced further when VCC is driven using
an output derived source, as the VCC component of VIN
current is then reduced by the converter duty cycle ratio.
Start-Up
The following section describes the start-up of the supply
and operation down to 4V once the step-down supply is
up and running. For the protection of the LT3844 and the
switching supply, there are internal undervoltage lockout
(UVLO) circuits with hysteresis on VIN, VCC and VBOOST
,
as shown in the Electrical Characteristics table. Start-up
and continuous operation require that all three of these
undervoltage lockout conditions be satisfied because the
TG MOSFET driver is disabled during any UVLO fault con-
dition. In start-up, for most applications, VCC is powered
from VIN through the high voltage linear regulator of the
LT3844. This requires VIN to be high enough to drive the
VCC voltage above its undervoltage lockout threshold.
VCC, in turn, has to be high enough to charge the BOOST
capacitor through an external diode so that the BOOST
voltage is above its undervoltage lockout threshold. There
is an NPN switch that pulls the SW node to ground each
cycle during the TG power MOSFET off-time, ensuring the
BOOST capacitor is kept fully charged. Once the supply
is up and running, the output voltage of the supply can
backdrive VCC through an external diode. Internal circuitry
disables the high voltage regulator to conserve VIN supply
current. Output voltages that are too low or too high to
backdrive VCC require additional circuitry such as a voltage
doubler or linear regulator. Once VCC is backdriven from
a supply other than VIN, VIN can be reduced to 4V with
normal operation maintained.
Soft-Start
The soft-start function controls the slew rate of the power
supply output voltage during start-up. A controlled output
voltage ramp minimizes output voltage overshoot, reduces
inrush current from the VIN supply, and facilitates supply
sequencing. A capacitor, CSS, connected from the CSS pin
to SGND, programs the slew rate. The capacitor is charged
from an internal 2µA current source producing a ramped
voltage. The capacitor voltage overrides the internal refer-
ence to the error amplifier. If the VFB pin voltage exceeds
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(Refer to Functional Diagram)
the CSS pin voltage then the current threshold set by the
DC control voltage, VC, is decreased and the inductor cur-
rent is lowered. This in turn decreases the output voltage
slew rate allowing the CSS pin voltage ramp to catch up
to the VFB pin voltage. An internal 100mV offset is added
to the VFB pin voltage relative to the to CSS pin voltage
so that at start-up the soft-start circuit will discharge the
VC pin voltage below the DC control voltage equivalent to
zero inductor current. This will reduce the input supply
inrush current. The soft-start circuit is disabled once the
CSS pin voltage has been charged to 200mV above the
internal reference of 1.231V.
During a VIN UVLO, VCC UVLO or SHDN UVLO event, the
CSS pin voltage is discharged with a 50µA current source.
In normal operation the CSS pin voltage is clamped to a
diode above the VFB pin voltage. Therefore, the value of
the CSS capacitor is relevant in how long of a fault event
will retrigger a soft-start. In other words, if any of the
above UVLO conditions occur, the CSS pin voltage will be
discharged with a 50µA current source. There is a diode
worth of voltage headroom to ride through the fault before
the CSS pin voltage enters its active region and the soft-
start function is enabled.
Also, since the CSS pin voltage is clamped to a diode above
the VFB pin voltage, during a short circuit the CSS pin volt-
age is pulled low because the VFB pin voltage is low. Once
the short has been removed the VFB pin voltage starts to
recover. The soft-start circuit takes control of the output
voltage slew rate once the VFB pin voltage has exceeded
the slowly ramping CSS pin voltage, reducing the output
voltage overshoot during a short-circuit recovery.
Slope/Antislope Compensation
The IC incorporates slope compensation to eliminate
potential subharmonic oscillations in the current control
loop. The IC’s slope compensation circuit imposes an
artificial ramp on the sensed current to increase the rising
slope as duty cycle increases.
Typically, this additional ramp affects the sensed current
value, thereby reducing the achievable current limit value
by the same amount as the added ramp represents. As
such, the current limit is typically reduced as the duty cycle
increases. The LT3844, however, contains antislope com-
pensation circuitry to eliminate the current limit reduction
associated with slope compensation. As the slope com-
pensation ramp is added to the sensed current, a similar
ramp is added to the current limit threshold. The end result
is that the current limit is not compromised so the LT3844
can provide full power regardless of required duty cycle.
Shutdown
The LT3844 includes a shutdown mode where all the
internal IC functions are disabled and the VIN current
is reduced to less than 10µA. The shutdown pin can be
used for undervoltage lockout with hysteresis, micro-
power shutdown or as a general purpose on/off control
of the converter output. The shutdown function has two
thresholds. The first threshold, a precision 1.23V threshold
with 120mV of hysteresis, disables the converter from
switching. The second threshold, approximately a 0.7V
referenced to SGND, completely disables all internal cir-
cuitry and reduces the VIN current to less than 10µA. See
the Application Information section for more information.
applicaTions inForMaTion
The basic LT3844 step-down (buck) application, shown
in the Typical Application on the front page, converts a
larger positive input voltage to a lower positive or negative
output voltage. This Application Information section assists
selection of external components for the requirements of
the power supply.
RSENSE Selection
The current sense resistor, RSENSE, monitors the induc-
tor current of the supply (See Typical Application on
front page). Its value is chosen based on the maximum
required output load current. The LT3844 current sense
amplifier has a maximum voltage threshold of, typically,
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100mV. Therefore, the peak inductor current is 100mV/
RSENSE. The maximum output load current, IOUT(MAX), is
the peak inductor current minus half the peak-to-peak
ripple current, IL.
Allowing adequate margin for ripple current and exter-
nal component tolerances, RSENSE can be calculated as
follows:
RSENSE =
70mV
IOUT(MAX)
Typical values for RSENSE are in the range of 0.005Ω to
0.05Ω.
Operating Frequency
The choice of operating frequency and inductor value is
a trade off between efficiency and component size. Low
frequency operation improves efficiency by reducing MOS-
FET switching losses and gate charge losses. However,
lower frequency operation requires more inductance for a
given amount of ripple current, resulting in a larger induc-
tor size and higher cost. If the ripple current is allowed
to increase, larger output capacitors may be required to
maintain the same output ripple. For converters with high
step-down VIN-to-VOUT ratios, another consideration is
the minimum on-time of the LT3844 (see the Minimum
On-time Considerations section). A final consideration
for operating frequency is that in noise-sensitive com-
munications systems, it is often desirable to keep the
switching noise out of a sensitive frequency band. The
LT3844 uses a constant frequency architecture that can
be programmed over a 100kHz to 500kHz range with a
single resistor from the fSET pin to ground, as shown in
Figure 1. The nominal voltage on the fSET pin is 1V and
the current that flows from this pin is used to charge an
internal oscillator capacitor. The value of RSET for a given
operating frequency can be chosen from Figure 4 or from
the following equation:
R
SET
(kΩ)=8.4 10
4
f
SW (
1.31)
Table 1 lists typical resistor values for common operating
frequencies:
Table 1. Recommended 1% Standard Values
RSET fSW
191kΩ 100kHz
118kΩ 150kHz
80.6kΩ 200kHz
63.4kΩ 250kHz
49.9kΩ 300kHz
40.2kΩ 350kHz
33.2kΩ 400kHz
27.4kΩ 450kHz
23.2kΩ 500kHz
Step-Down Converter: Inductor Selection
The critical parameters for selection of an inductor are
minimum inductance value, volt-second product, satura-
tion current and/or RMS current.
For a given I, The minimum inductance value is calcu-
lated as follows:
LVOUT
V
IN(MAX)
V
OUT
fSW V
IN(MAX) IL
fSW is the switch frequency.
FREQUENCY (kHz)
0
20
RSET (kΩ)
40
80
100
120
400
3844 G19
60
200
100 500
300 600
140
160
180
Figure 1. Timing Resistor (RSET) Value
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The typical range of values for IL is (0.2 IOUT(MAX)) to
(0.5 IOUT(MAX)), where IOUT(MAX) is the maximum load
current of the supply. Using IL = 0.3 IOUT(MAX) yields a
good design compromise between inductor performance
versus inductor size and cost. A value of IL = 0.3 IOUT(MAX)
produces a ±15% of IOUT(MAX) ripple current around the DC
output current of the supply. Lower values of IL require
larger and more costly magnetics. Higher values of IL
will increase the peak currents, requiring more filtering
on the input and output of the supply. If IL is too high,
the slope compensation circuit is ineffective and current
mode instability may occur at duty cycles greater than
50%. To satisfy slope compensation requirements the
minimum inductance is calculated as follows:
L>VOUT
2DC
MAX
1
DCMAX
R
SENSE
8.33
f
SW
Some magnetics vendors specify a volt-second product
in their data sheet. If they do not, consult the magnetics
vendor to make sure the specification is not being exceeded
by your design. The volt-second product is calculated as
follows:
Volt-second (µs) =
(V
IN(MAX)
V
OUT
)V
OUT
V
IN(MAX) fSW
The magnetics vendors specify either the saturation cur-
rent, the RMS current or both. When selecting an inductor
based on inductor saturation current, use the peak cur-
rent through the inductor, IOUT(MAX) + IL/2. The inductor
saturation current specification is the current at which
the inductance, measured at zero current, decreases by
a specified amount, typically 30%.
When selecting an inductor based on RMS current rating,
use the average current through the inductor, IOUT(MAX).
The RMS current specification is the RMS current at which
the part has a specific temperature rise, typically 40°C,
above 25°C ambient.
After calculating the minimum inductance value, the
volt-second product, the saturation current and the RMS
current for your design, select an off-the-shelf inductor.
Contact the Application group at Linear Technology for
further support.
For more detailed information on selecting an inductor,
please see the “Inductor Selection” section of Linear
Technology Application Note 44.
Step-Down Converter: MOSFET Selection
The selection criteria of the external N-channel standard
level power MOSFET include on resistance(RDS(ON)), re-
verse transfer capacitance (CRSS), maximum drain source
voltage (VDSS), total gate charge (QG) and maximum
continuous drain current.
For maximum efficiency, minimize RDS(ON) and CRSS.
Low RDS(ON) minimizes conduction losses while low CRSS
minimizes transition losses. The problem is that RDS(ON) is
inversely related to CRSS. Balancing the transition losses
with the conduction losses is a good idea in sizing the
MOSFET. Select the MOSFET to balance the two losses.
Calculate the maximum conduction losses of the MOSFET:
P
COND =(IOUT(MAX))2VOUT
V
IN
(RDS(ON))
Note that RDS(ON) has a large positive temperature depen-
dence. The MOSFET manufacturer’s data sheet contains
a curve, RDS(ON) vs Temperature.
Calculate the maximum transition losses:
PTRAN = (k)(VIN)2 (IOUT(MAX))(CRSS)(fSW)
where k is a constant inversely related to the gate driver
current, approximated by k = 2 for LT3844 applications.
The total maximum power dissipation of the MOSFET is
the sum of these two loss terms:
PFET(TOTAL) = PCOND + PTRAN
To achieve high supply efficiency, keep the PFET(TOTAL) to
less than 3% of the total output power. Also, complete
a thermal analysis to ensure that the MOSFET junction
temperature is not exceeded.
TJ = TA + PFET(TOTAL) θJA
where θJA is the package thermal resistance and TA is the
ambient temperature. Keep the calculated TJ below the
maximum specified junction temperature, typically 150°C.
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Note that when VIN is high and fSW is high, the transition
losses may dominate. A MOSFET with higher RDS(ON)
and lower CRSS may provide higher efficiency. MOSFETs
with higher voltage VDSS specification usually have higher
RDS(ON) and lower CRSS.
Choose the MOSFET VDSS specification to exceed the
maximum voltage across the drain to the source of the
MOSFET, which is VIN(MAX) plus any additional ringing
on the switch node. Ringing on the switch node can be
greatly reduced with good PCB layout and, if necessary,
an RC snubber.
The internal VCC regulator is capable of sourcing up to
40mA which limits the maximum total MOSFET gate
charge, QG, to 40mA/fSW
. The QG vs VGS specification is
typically provided in the MOSFET data sheet. Use QG at
VGS of 8V. If VCC is back driven from an external supply,
the MOSFET drive current is not sourced from the internal
regulator of the LT3844 and the QG of the MOSFET is not
limited by the IC. However, note that the MOSFET drive
current is supplied by the internal regulator when the
external supply back driving VCC is not available such as
during start-up or short-circuit.
The manufacturer’s maximum continuous drain current
specification should exceed the peak switch current,
IOUT(MAX) + IL/2.
During the supply start-up, the gate drive levels are set by
the VCC voltage regulator, which is approximately 8V. Once
the supply is up and running, the VCC can be back driven
by an auxiliary supply such as VOUT
. It is important not to
exceed the manufacturer’s maximum VGS specification.
A standard level threshold MOSFET typically has a VGS
maximum of 20V.
Step-Down Converter: Rectifier Selection
The rectifier diode (D1 on the Functional Diagram) in a
buck converter generates a current path for the inductor
current when the main power switch is turned off. The
rectifier is selected based upon the forward voltage, re-
verse voltage and maximum current. A Schottky diode is
recommended. Its low forward voltage yields the lowest
power loss and highest efficiency. The maximum reverse
voltage that the diode will see is VIN(MAX).
In continuous mode operation, the average diode cur-
rent is calculated at maximum output load current and
maximum VIN:
IDIODE(AVG) =IOUT(MAX)
V
IN(MAX)
V
OUT
V
IN(MAX)
To improve efficiency and to provide adequate margin
for short-circuit operation, a diode rated at 1.5 to 2
times the maximum average diode current, IDIODE(AVG),
is recommended.
Step-Down Converter: Input Capacitor Selection
A local input bypass capacitor is required for buck convert-
ers because the input current is pulsed with fast rise and
fall times. The input capacitor selection criteria are based
on the bulk capacitance and RMS current capability. The
bulk capacitance will determine the supply input ripple
voltage. The RMS current capability is used to keep from
overheating the capacitor.
The bulk capacitance is calculated based on maximum
input ripple, VIN:
CIN(BULK) =
I
OUT(MAX)
V
OUT
V
IN fSW V
IN(MIN)
VIN is typically chosen at a level acceptable to the user.
100mV to 200mV is a good starting point. Aluminum elec-
trolytic capacitors are a good choice for high voltage, bulk
capacitance due to their high capacitance per unit area.
The capacitor’s RMS current is:
ICIN(RMS) =IOUT
VOUT(V
IN VOUT )
(V
IN )2
If applicable, calculate it at the worst-case condition,
VIN = 2VOUT
. The RMS current rating of the capacitor
is specified by the manufacturer and should exceed the
calculated ICIN(RMS). Due to their low ESR (equivalent
series resistance), ceramic capacitors are a good choice
for high voltage, high RMS current handling. Note that the
ripple current ratings from aluminum electrolytic capacitor
manufacturers are based on 2000 hours of life. This makes
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it advisable to further derate the capacitor or to choose
a capacitor rated at a higher temperature than required.
The combination of aluminum electrolytic capacitors and
ceramic capacitors is an economical approach to meet-
ing the input capacitor requirements. The capacitor volt-
age rating must be rated greater than VIN(MAX). Multiple
capacitors may also be paralleled to meet size or height
requirements in the design. Locate the capacitor very close
to the MOSFET switch and use short, wide PCB traces to
minimize parasitic inductance.
Step-Down Converter: Output Capacitor Selection
The output capacitance, COUT
, selection is based on the
design’s output voltage ripple, VOUT and transient load
requirements. VOUT is a function of IL and the COUT
ESR. It is calculated by:
VOUT = ILESR+1
(8 f
SW
C
OUT
)
The maximum ESR required to meet a VOUT design
requirement can be calculated by:
ESR(MAX) =
(
V
OUT
)(L)(f
SW
)
VOUT 1VOUT
V
IN(MAX)
Worst-case VOUT occurs at highest input voltage. Use
paralleled multiple capacitors to meet the ESR require-
ments. Increasing the inductance is an option to lower
the ESR requirements. For extremely low VOUT
, an ad-
ditional LC filter stage can be added to the output of the
supply. Application Note 44 has some good tips on sizing
an additional output filter.
Output Voltage Programming
A resistive divider sets the DC output voltage according
to the following formula:
R2 =R1 VOUT
1.231V 1
The external resistor divider is connected to the output
of the converter as shown in Figure 2. Tolerance of the
feedback resistors will add additional error to the output
voltage.
Example: VOUT = 12V; R1 = 10k
R2 =10k 12V
1.231V 1
=87.48k use 86.6k 1%
The VFB pin input bias current is typically 25nA, so use
of extremely high value feedback resistors could cause a
converter output that is slightly higher than expected. Bias
current error at the output can be estimated as:
VOUT(BIAS) = 25nA R2
Supply UVLO and Shutdown
The SHDN pin has a precision voltage threshold with
hysteresis which can be used as an undervoltage lockout
threshold (UVLO) for the power supply. Undervoltage
lockout keeps the LT3844 in shutdown until the supply
input voltage is above a certain voltage programmed by
the user. The hysteresis voltage prevents noise from falsely
tripping UVLO.
Resistors are chosen by first selecting RB. Then:
RA=RBVSUPPLY(ON)
1.35V 1
L1
VFB PIN
R2
R1
VOUT
COUT
3844 F02
SHDN PIN
RA
RB
V
SUPPLY
3844 F03
Figure 2. Output Voltage Feedback Divider Figure 3. Undervoltage Lockout Circuit
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VSUPPLY(ON) is the input voltage at which the undervoltage
lockout is disabled and the supply turns on.
Example: Select RB = 49.9kΩ, VSUPPLY(ON) = 14.5V (based
on a 15V minimum input voltage)
RA=49.9k 14.5V
1.35V 1
= 486.1k (499k resistor is selected)
If low supply current in standby mode is required, select
a higher value of RB.
The supply turn off voltage is 9% below turn on. In the
example the VSUPPLY(OFF) would be 13.2V.
If additional hysteresis is desired for the enable function,
an external positive feedback resistor can be used from
the LT3844 regulator output.
The shutdown function can be disabled by connecting the
SHDN pin to the VIN through a large value pull-up resistor.
This pin contains a low impedance clamp at 6V, so the
SHDN pin will sink current from the pull-up resistor(RPU):
ISHDN =
V
IN
6V
R
PU
Because this arrangement will clamp the SHDN pin to
the 6V, it will violate the 5V absolute maximum voltage
rating of the pin. This is permitted, however, as long as
the absolute maximum input current rating of 1mA is not
exceeded. Input SHDN pin currents of <100µA are recom-
mended: a 1M or greater pull-up resistor is typically used
for this configuration.
Soft-Start
The desired soft-start time (tSS) is programmed via the
CSS capacitor as follows:
CSS =
2µA t
SS
1.231V
The amount of time in which the power supply can withstand
a VIN, VCC or VSHDN UVLO fault condition (tFAULT) before
the CSS pin voltage enters its active region is approximated
by the following formula:
tFAULT =
C
SS
0.65V
50µA
Oscillator SYNC
The oscillator can be synchronized to an external clock.
Set the RSET resistor at least 10% below the desired sync
frequency.
It is recommended that the SYNC pin be driven with a
square wave that has amplitude greater than 2V, pulse
width greater than 1ms and rise time less than 500ns. The
rising edge of the sync wave form triggers the discharge
of the internal oscillator capacitor.
Efficiency Considerations
The efficiency of a switching regulator is equal to the output
power divided by the input power times 100%. Express
percent efficiency as:
% Efficiency = 100% - (L1 + L2 + L3 + ...)
where L1, L2, etc. are individual loss terms as a percent-
age of input power.
Although all dissipative elements in the circuit produce
losses, four main contributors usually account for most
of the losses in LT3844 circuits:
1. LT3844 VIN and VCC current loss
2. I2R conduction losses
3. MOSFET transition loss
4. Schottky diode conduction loss
1. The VIN and VCC currents are the sum of the quiescent
currents of the LT3844 and the MOSFET drive currents.
The quiescent currents are in the LT3844 Electrical Char-
acteristics table. The MOSFET drive current is a result
of charging the gate capacitance of the power MOSFET
each cycle with a packet of charge, QG. QG is found in
the MOSFET data sheet. The average charging current is
calculated as QG fSW
. The power loss term due to these
currents can be reduced by backdriving VCC with a lower
voltage than VIN such as VOUT
.
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2. I2R losses are calculated from the DC resistances of the
MOSFET, the inductor, the sense resistor and the input
and output capacitors. In continuous conduction mode
the average output current flows through the inductor
and RSENSE but is chopped between the MOSFET and
the Schottky diode. The resistances of the MOSFET
(RDS(ON)) and the RSENSE multiplied by the duty cycle
can be summed with the resistances of the inductor
and RSENSE to obtain the total series resistance of the
circuit. The total conduction power loss is proportional
to this resistance and usually accounts for between 2%
to 5% loss in efficiency.
3. Transition losses of the MOSFET can be substantial with
input voltages greater than 20V. See MOSFET Selection
section.
4. The Schottky diode can be a major contributor of power
loss especially at high input to output voltage ratios (low
duty cycles) where the diode conducts for the majority
of the switch period. Lower Vf reduces the losses. Note
that oversizing the diode does not always help because
as the diode heats up the Vf is reduced and the diode
loss term is decreased.
I2R losses and the Schottky diode loss dominate at
high load currents. Other losses including CIN and
COUT ESR dissipative losses and inductor core losses
generally account for less than 2% total additional loss
in efficiency.
PCB Layout Checklist
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation. These
items are illustrated graphically in the layout diagram of
Figure 3.
1. Keep the signal and power grounds separate. The signal
ground consists of the LT3844 SGND pin, the Exposed
Pad on the backside of the LT3844 IC and the () terminal
of VOUT
. The signal ground is the quiet ground and does
not contain any high, fast currents. The power ground
consists of the Schottky diode anode, the (–) terminal
of the input capacitor and the ground return of the VCC
capacitor. This ground has very fast high currents and
is considered the noisy ground. The two grounds are
connected to each other only at the (–) terminal of VOUT
.
2. Use short wide traces in the loop formed by the MOSFET,
the Schottky diode and the input capacitor to minimize
high frequency noise and voltage stress from parasitic
inductance. Surface mount components are preferred.
3. Connect the VFB pin directly to the feedback resistors
independent of any other nodes, such as the SENSE
pin. Connect the feedback resistors between the (+) and
(–) terminals of COUT
. Locate the feedback resistors in
close proximity to the LT3844 to keep the high imped-
ance node, VFB, as short as possible.
4. Route the SENSE and SENSE+ traces together and
keep as short as possible.
5. Locate the VCC and BOOST capacitors in close proximity
to the IC. These capacitors carry the MOSFET driver’s
high peak currents. Place the small-signal components
away from high frequency switching nodes (BOOST, SW
and TG). In the layout shown in Figure 3, place all the
small-signal components on one side of the IC and all
the power components on the other. This helps to keep
the signal and power grounds separate.
6. A small decoupling capacitor (100pF) is sometimes
useful for filtering high frequency noise on the feedback
and sense nodes. If used, locate as close to the IC as
possible.
7. The LT3844 packaging will efficiently remove heat
from the IC through the Exposed Pad on the backside
of the part. The Exposed Pad is soldered to a copper
footprint on the PCB. Make this footprint as large as
possible to improve the thermal resistance of the IC
case to ambient air. This helps to keep the LT3844 at a
lower temperature.
8. Make the trace connecting the gate of MOSFET M1 to
the TG pin of the LT3844 short and wide.
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3
CBOOST
RSENSE
RA
RC
RSET
R2
R1
RB
VIN
V
IN
+
VIN
SHDN
SYNC
fSET
CSS
BURST_EN
VFB
VC
SGND
BOOST
TG
SW
VCC
PGND
SENSE+
SENSE
+
L1
M1
D3
3844 F04
LT3844
1
2
4
5
6
7
8
9
16
15
14
13
12
11
10
D2
D1
CVCC
CIN
COUT VOUT
CC2
CSS
CC1
17
Figure 4. LT3844 Layout Diagram (See PCB Layout Checklist)
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Minimum On-Time Considerations (Buck Mode)
Minimum on-time, tON(MIN), is the smallest amount of time
that the LT3844 is capable of turning the top MOSFET on
and off again. It is determined by internal timing delays
and the amount of gate charge required turning on the
top MOSFET. Low duty cycle applications may approach
this minimum on-time limit and care should be taken to
ensure that:
tON =
V
OUT
V
IN f
SW
>tON(MIN)
where tON(MIN) is typically 350ns worst case.
If the duty cycle falls below what can be accommodated
by the minimum on-time, the LT3844 will begin to skip
cycles. The output will be regulated, but the ripple current
and ripple voltage will increase. If lower frequency opera-
tion is acceptable, the on-time can be increased above
tON(MIN) for the same step-down ratio.
Boost Converter Design
The LT3844 can be used to configure a boost converter
to step-up voltages to as high as hundreds of volts. An
example of a boost converter circuit schematic is shown
in the Typical Applications section. The following sections
are a guide to designing a boost converter:
The maximum duty cycle of the main switch is:
DCMAX =
V
OUT
V
IN(MIN)
V
OUT
Boost Converter: Inductor Selection
The critical parameters for selection of an inductor are
minimum inductance value and saturation current. The
minimum inductance value is calculated as follows:
LMIN =V
IN(MIN)
I
L
f
SW
DCMAX
fSW is the switch frequency.
Similar to the buck converter, the typical range of values
for IL is (0.2 IL(MAX)) to (0.5 IL(MAX)), where IL(MAX)
is the maximum average inductor current.
IL(MAX) =IOUT(MAX)
V
OUT
V
IN(MIN)
Using IL = 0.3 IL(MAX) yields a good design compromise
between inductor performance versus inductor size and
cost.
The inductor must not saturate at the peak operating
current, IL(MAX) + IL/2. The inductor saturation current
specification is the current at which the inductance, mea-
sured at zero current, decreases by a specified amount,
typically 30%.
One drawback of boost regulators is that they cannot be
current limited for output shorts because the current steer-
ing diode makes a direct connection between input and
output. Therefore, the inductor current during an output
short circuit is only limited by the available current of the
input supply.
After calculating the minimum inductance value and the
saturation current for your design, select an off-the-shelf
inductor. For more detailed information on selecting an
inductor, please see the “Inductor Selection” section of
Linear Technology Application Note 19.
Boost Converter: MOSFET Selection
The selection criteria of the external N-channel standard
level power MOSFET include on resistance (RDS(ON)), re-
verse transfer capacitance (CRSS), maximum drain source
voltage (VDSS), total gate charge (QG) and maximum
continuous drain current.
For maximum efficiency, minimize RDS(ON) and CRSS.
Low RDS(ON) minimizes conduction losses while low CRSS
minimizes transition losses. The problem is that RDS(ON) is
inversely related to CRSS. Balancing the transition losses
with the conduction losses is a good idea in sizing the
LT3844
20
3844fc
For more information www.linear.com/LT3844
applicaTions inForMaTion
MOSFET. Select the MOSFET to balance the two losses.
Calculate the maximum conduction losses of the MOSFET:
P
COND =DCMAX
IOUT(MAX)
1DCMAX
RDS(ON)
Note that RDS(ON) has large positive temperature depen-
dence. The MOSFET manufacturer’s data sheet contains
a curve, RDS(ON) vs Temperature. Calculate the maximum
transition losses:
PTRAN =(k)(VOUT )2(IOUT(MAX))(CRSS )(f
SW )
(1DC
MAX
)
where k is a constant inversely related to the gate driver
current, approximated by k = 2 for LT3844 applications.
The total maximum power dissipation of the MOSFET is
the sum of these two loss terms:
PFET(TOTAL) = PCOND + PTRAN
To achieve high supply efficiency, keep the PFET(TOTAL) to
less than 3% of the total output power. Also, complete
a thermal analysis to ensure that the MOSFET junction
temperature is not exceeded.
TJ = TA + PFET(TOTAL) θJA
where θJA is the package thermal resistance and TA is the
ambient temperature. Keep the calculated TJ below the
maximum specified junction temperature, typically 150°C.
Note that when VOUT is high (>20V), the transition losses
may dominate. A MOSFET with higher RDS(ON) and lower
CRSS may provide higher efficiency. MOSFETs with higher
voltage VDSS specification usually have higher RDS(ON)
and lower CRSS.
Choose the MOSFET VDSS specification to exceed the
maximum voltage across the drain to the source of the
MOSFET, which is VOUT plus the forward voltage of the
rectifier, typically less than 1V.
The internal VCC regulator is capable of sourcing up to
40mA which limits the maximum total MOSFET gate
charge, QG, to 40mA / fSW
. The QG vs VGS specification
is typically provided in the MOSFET data sheet. Use QG at
VGS of 8V. If VCC is back driven from an external supply,
the MOSFET drive current is not sourced from the internal
regulator of the LT3844 and the QG of the MOSFET is not
limited by the IC. However, note that the MOSFET drive
current is supplied by the internal regulator when the
external supply back driving VCC is not available such as
during start-up or short-circuit.
The manufacturer’s maximum continuous drain current
specification should exceed the peak switch current which
is the same as the inductor peak current, IL(MAX) + IL/2.
During the supply start-up, the gate drive levels are set by
the VCC voltage regulator, which is approximately 8V. Once
the supply is up and running, the VCC can be back driven
by an auxiliary supply such as VOUT
. It is important not to
exceed the manufacturer’s maximum VGS specification.
A standard level threshold MOSFET typically has a VGS
maximum of 20V.
Boost Converter: Rectifier Selection
The rectifier is selected based upon the forward voltage,
reverse voltage and maximum current. A Schottky diode
is recommended for its low forward voltage and yields the
lowest power loss and highest efficiency. The maximum
reverse voltage that the diode will see is VOUT
. The average
diode current is equal to the maximum output load current,
IOUT(MAX). A diode rated at 1.5 to 2 times the maximum
average diode current is recommended. Remember boost
converters are not short-circuit protected.
Boost Converter: Output Capacitor Selection
In boost mode, the output capacitor requirements are
more demanding due to the fact that the current waveform
is pulsed instead of continuous as in a buck converter.
The choice of component(s) is driven by the acceptable
ripple voltage which is affected by the ESR, ESL and bulk
capacitance. The total output ripple voltage is:
VOUT =IOUT(MAX)
1
fSW COUT
+ESR
1DCMAX
where the first term is due to the bulk capacitance and the
second term due to the ESR.
LT3844
21
3844fc
For more information www.linear.com/LT3844
applicaTions inForMaTion
The choice of output capacitor is also driven by the RMS
ripple current requirement. The RMS ripple current is:
IRMS(COUT) =IOUT(MAX) VOUT V
IN(MIN)
V
IN(MIN)
At lower output voltages (<30V) it may be possible to sat-
isfy both the output ripple voltage and RMS requirements
with one or more capacitors of a single type. However, at
output voltages above 30V where capacitors with both low
ESR and high bulk capacitance are hard to find, the best
approach is to use a combination of aluminum electrolytic
and ceramic capacitors. The low ESR ceramic capacitor
will minimize the ESR while the Aluminum Electrolytic
capacitor will supply the required bulk capacitance.
Boost Converter: Input Capacitor Selection
The input capacitor of a boost converter is less critical
than the output capacitor, due to the fact that the inductor
is in series with the input and the input current waveform
is continuous. The input voltage source impedance de-
termines the size of the input capacitor, which is typically
in the range of 10µF to 100µF. A low ESR capacitor is
recommended though not as critical as with the output
capacitor. The RMS input capacitor ripple current for a
boost converter is:
IRMS(CIN) =0.3
V
IN(MIN)
Lf
SW
DCMAX
Please note that the input capacitor can see a very high
surge current when a battery is suddenly connected to
the input of the converter and solid tantalum capacitors
can fail catastrophically under these conditions. Be sure
to specify surge-tested capacitors.
Boost Converter: RSENSE Selection
The boost application in the Typical Applications section
has the location of the current sense resistor in series with
the inductor with one side referenced to VIN. This location
was chosen for two reasons. Firstly, the circulating current
is always monitored so in the case of an output overvoltage
or input overcurrent condition the main switch will skip
cycles to protect the circuitry. Secondly, the VIN node can
be considered low noise since it is heavily filtered and the
input current is not pulsed but continuous.
In the case where the input voltage exceeds the voltage
limits on the LT3844 Sense pins, the sense resistor can
be moved to the source of the MOSFET. In both cases the
resistor value is the calculated using the same formula.
The LT3844 current comparator has a maximum threshold
of 100mV/RSENSE. The current comparator threshold sets
the peak of the inductor current. Allowing adequate margin
for ripple current and external component tolerances,
RSENSE can be calculated as follows:
RSENSE =
70mV
IL(MAX)
Where IL(MAX) is the maximum average inductor current
as calculated in the Boost Converter: Inductor Selection
section.
LT3844
22
3844fc
For more information www.linear.com/LT3844
Typical applicaTions
All Ceramic Capacitor Application, 24V to 3.3V at 5A, fSW = 250kHz
VIN
SHDN
CSS
BURST_EN
VFB
VC
SYNC
fSET
BOOST
TG
SW
VCC
PGND
SENSE+
SENSE
SGND
LT3844
3844 TA02
R5
63.4k
V
OUT
3.3V
5A
C2
680pF
C3
100pF
CIN
22µF
×3
R4
10k
C1
2200pF
C5
0.22µF
C4
2.2µF
L1
6.8µH
COUT
100µF
×2
RSENSE
0.01Ω
R1
3.32k
R2
5.62k
R3
1M
D1
D2
IN4148
M1
V
IN
24V
L1 = VISHAY, IHLP5050FD-01
M1 = VISHAY, SI7852DP
D1 = DIODES INC, PDS760
COUT = TDK, C4532X5R0J107K
CIN = TDK, C4532X7R2A225K
(VOLTAGE
TRANSIENTS
UP TO 60V)
4
1
3
2
5
6
7
8
16
15
14
13
12
11
10
9
8V to 20V to 8V, 25W SEPIC Application
VIN
SHDN
CSS
BURST_EN
VFB
VC
SYNC
fSET
BOOST
TG
SW
VCC
PGND
SENSE+
SENSE
SGND
LT3844
3844 TA03
R3
49.9k
V
OUT
8V
25W
C2
100pF
C3
680pF
CIN2
F
25V
CIN1
22µF
25V
×3
C1
3300pF
C5
22µF
25V
×3
C4
F
25V
R1
10k
R2
54.9k
R4
1M
RSENSE
0.01Ω
R5
40.2k
D2
R6
10Ω
R7
10Ω
M1
V
IN
12V
L1 = COILTRONICS, VERSAPAC VP5-0083
CIN, C5, COUT2 = TDK, C4532X7R1E226M
D2 = ONSEMI, MBRD660
COUT = SANYO OS-CON, 16SVP330M
C
IN
= VISHAY, Si7852DP
56pF
C
OUT2
22µF
25V
COUT1
330µF
16V
L1
L1
4
1
3
2
5
6
7
8
16
15
14
13
12
11
10
9
+
LT3844
23
3844fc
For more information www.linear.com/LT3844
Typical applicaTions
Two Phase Spread Spectrum 24V Input to 12V, 6A Output
VIN
SHDN
CSS
BURST_EN
VFB
VC
SYNC
fSET
BOOST
TG
SW
VCC
PGND
SENSE+
SENSE
SGND
LT3844
R5
49.9k
R21
49.9k
R22
10k
V
OUT
12V
6A
C2
680pF
C13
47pF
R4
4.99k
C1
2200pF
C5
0.22µF
16V
C4
2.2µF
L1
15µH
COUT
22µF
25V
RSENSE
0.02Ω
R1
10k
CIN
6.8µF
50V
×3
R2
87.5k
R3
3M
R6
270k
R13
3M
R16
270k
D1
D1a
BAV70
D11a
BAV70
D1b
BAV70
M1
VIN
SHDN
CSS
BURST_EN
VFB
VC
SYNC
fSET
BOOST
TG
SW
VCC
PGND
SENSE+
SENSE
SGND
LT3844
3844 TA04
R15
49.9k
C11
2200pF
C15
0.22µF
16V
C14
2.2µF
L1
15µH
RSENSE
0.02Ω
R11
10k
R12
87.5k
D11
M11
L1, L11 = VISHAY, IHLP5050FD-01
M1, M11 = VISHAY, Si7850DP
D1, D11 = DIODES INC, PDS760
COUT = TDK, C4532X7R1E226K
CIN = TDK, C4532X7R1H685K
V+
DIV
PH
OUT1
SET
MOD
GND
OUT2
OUT VIN
GND
LTC6902
LT1121-5
VIN
18V
TO
36V
D11b
BAV70
4
1
3
2
5
6
7
8
16
15
14
13
12
11
10
9
4
1
1
3
3
2
2
5
6
7
8
16
15
14
13
12
11
10
9
10
9
8
5
1
2
3
4
SYNC1
SYNC2
SYNC1
SYNC2
LT3844
24
3844fc
For more information www.linear.com/LT3844
package DescripTion
FE Package
16-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1663 Rev K)
Exposed Pad Variation BC
FE16 (BC) TSSOP REV K 1013
0.09 – 0.20
(.0035 – .0079)
0° – 8°
0.25
REF
0.50 – 0.75
(.020 – .030)
4.30 – 4.50*
(.169 – .177)
1 3 4 5678
10
DETAIL B IS THE PART OF
THE LEAD FRAME FEATURE
FOR REFERENCE ONLY
NO MEASUREMENT PURPOSE
9
4.90 – 5.10*
(.193 – .201)
16 1514 13 12 11
1.10
(.0433)
MAX
0.05 – 0.15
(.002 – .006)
0.65
(.0256)
BSC
2.94
(.116)
0.48
(.019)
REF
0.51
(.020)
REF
0.195 – 0.30
(.0077 – .0118)
TYP
2
RECOMMENDED SOLDER PAD LAYOUT
0.45 ±0.05
0.65 BSC
4.50 ±0.10
6.60 ±0.10
1.05 ±0.10
2.94
(.116)
3.58
(.141)
3.58
(.141)
MILLIMETERS
(INCHES)
*DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.150mm (.006") PER SIDE
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE
4. RECOMMENDED MINIMUM PCB METAL SIZE
FOR EXPOSED PAD ATTACHMENT
SEE NOTE 4
SEE NOTE 5
5. BOTTOM EXPOSED PADDLE MAY HAVE METAL
PROTRUSION IN THIS AREA. THIS REGION MUST
BE FREE OF ANY EXPOSED TRACES OR VIAS ON
PCB LAYOUT
6.40
(.252)
BSC
FE Package
16-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1663 Rev K)
Exposed Pad Variation BC
DETAIL B
4.60
Please refer to http://www.linear.com/product/LT3844#packaging for the most recent package drawings.
LT3844
25
3844fc
For more information www.linear.com/LT3844
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
revision hisTory
REV DATE DESCRIPTION PAGE NUMBER
C 04/16 Modified the Block Diagram
Changed lower schematic C5 value
8
22
(Revision history begins at Rev C)
LT3844
26
3844fc
For more information www.linear.com/LT3844
LINEAR TECHNOLOGY CORPORATION 2006
LT 0416 REV C • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507 www.linear.com/LT3844
relaTeD parTs
Typical applicaTion
12V to 48V 50W Step-Up Converter with 400kHz Switching Frequency
4
R6
40k
R2
383k
R1
10k
VIN
CSS
BURST_EN
VFB
VC
SYNC
fSET
BOOST
TG
SW
VCC
PGND
SENSE+
SENSE
SGND
M1
D2
3844 TA05
LT3844
SHDN
1
3
2
5
6
7
8
16
15
14
13
12
11
10
9
C3
4700pF
C2
120pF
C5
2.2µF
25V
C4
4700pF
C1
0.1µF
25V
COUT1
330µF
COUT2
220µF
M1 = VISHAY, Si7370DP
L1 = VISHAY, IHLP5050FD-01
D2 = DIODES INC., PDS560
CIN = SANYO, 25SVP33M
COUT1 = SANYO, 63CE220FST
COUT2 = TDK, C4532X7R2A225K
R
SENSE = IRC, LRF2512-01-R010-F
CIN
33µF
25V
×2
VIN
12V
R
SENSE
0.01Ω
L1
6.8µH
VOUT
48V
50W
D1
BAV99
R4
4.7M
R5
33.2k
+
+
PART NUMBER DESCRIPTION COMMENTS
LT3840 Wide Input Range Synchronous Regulator Controller
with Integrated Buck-Boost Bias Voltage requlator
Synchronizable Fixed Frequency 100kHz to 600kHz, 2.5V ≤ VIN ≤ 60V,
1.23V ≤ VOUT ≤ 60V, IQ = 75µA, TSSOP-28, 4mm × 6mm QFN-38
LT3845A 60V, Low IQ, Single Output Synchronous Step-Down
DC/DC Controller
Synchronizable Fixed Frequency 100kHz to 600kHz, 4V ≤ VIN ≤ 60V,
1.23V ≤ VOUT ≤ 36V, IQ = 120µA, TSSOP-16
LT3800 60V, Low IQ, Single Output Synchronous Step-Down
DC/DC Controller
Fixed 200kHz Frequency, 4V≤ VIN ≤ 60V, 1.23V ≤ VOUT ≤ 36V, IQ = 120µA,
TSSOP-16
LT C
®
3891 60V, Low IQ, Synchronous Step-Down DC/DC Controller Phase-Lockable Fixed Frequency, 50kHz to 900kHz 4V ≤ VIN ≤ 60V,
0.8V ≤ VOUT ≤ 24V, IQ = 50µA
LTC3864 60V, Low IQ, Step-Down DC/DC Controller 100% Duty
Cycle Capability
Selectable Fixed Frequency, 200kHz to 600kHz 3.5V≤ VIN ≤ 60V,
0.8V ≤ VOUT ≤ VIN, IQ = 40µA, MSOP-10E
LTC3892 60V, Low IQ, Dual 2-Phase Synchronous Step-Down
DC/DC Controller with Adjustable Gate Drive Voltage
Phase-Lockable Fixed Frequency, 50kHz to 900kHz, 4V ≤ VIN ≤ 60V,
0.8V ≤ VOUT ≤ 0.99VIN, IQ = 29µA
LT8709 Negative Input Synchronous Multi-Topology DC/DC
Control
–80V ≤ VIN ≤ –4.5V, Up to 400kHz Programmable Operating Frequency,
TSSOP-20
LT8710 Synchronous SEPIC/Inverting/Boost Controller with
Output Current Control
4.5V ≤ VIN ≤ 80V, 100kHz to 1MHz Programmable Operating Frequency,
TSSOP-20
LT8705 80V VIN and VOUT Synchronous 4-Switch Buck- Boost
DC/DC Controller
2.8V ≤ VIN ≤ 80V, 100kHz to 400kHz Programmable Operating Frequency,
5mm × 7mm QFN-38 and TSSOP-38