\"PESD9X5.0L,315\" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

Single unidirectional ElectroStatic Discharge (ESD) protection diodes in a SOD882

leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect

one signal line from the damage caused by ESD and other transients.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protection diodes

Rev. 1 — 16 December 2010 Product data sheet

ESD protection of one line ESD protection up to 30 kV

Max. peak pulse power: PPP =150W IEC 61000-4-2; level 4 (ESD)

Low clamping voltage: VCL =10V IEC 61000-4-5 (surge); IPP =10A

Ultra low leakage current: IRM =3nA Ultra small SMD plastic package

AEC-Q101 qualified

Computers and peripherals Portable electronics

Audio and video equipment Communication systems

Cellular handsets and accessories

Table 1. Quick reference data

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage

PESD9X5.0L - - 5.0 V

PESD9X7.0L - - 7.0 V

Cddiode capacitance f = 1 MHz; VR=0V

PESD9X5.0L - 68 100 pF

PESD9X7.0L - 62 100 pF

Product data sheet Rev. 1 — 16 December 2010 2 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

4. Marking

5. Limiting values

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1 to pin 2.

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode 21

Transparent

top view

006aaa15

Table 3. Ordering i nformation

Type number Package

Name Description Version

PESD9X5.0L - leadless ultra small plastic package; 2 terminals;

body 1.0 ×0.6 ×0.5 mm SOD882

PESD9X7.0L

Table 4. Marking codes

Type number Marking code

PESD9X5.0L AS

PESD9X7.0L AT

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPP peak pulse power tp=8/20μs[1][2] -150W

IPP peak pulse current tp=8/20μs[1][2] -10A

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 1 — 16 December 2010 3 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

[1] Device stressed with ten non-repetitive ESD pulses.

[2] Measured from pin 1 to pin 2.

Table 6. ESD maximum ratings

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1][2] -30kV

machine model - 400 V

MIL-STD-883

(human body model) -10kV

Table 7. ESD standards compliance

Standard Conditions

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Fig 1. 8/20 μs pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa63

100 %

90 %

30 ns

60 ns

10 %

= 0.7 ns to 1 ns

Product data sheet Rev. 1 — 16 December 2010 4 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

6. Characteristics

[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1 to pin 2.

[3] Non-repetitive current pulse; Transmission Line Pulse (TLP) tp= 100 ns; square pulse;

ANSI/ESD STM5.1-2008.

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff voltage

PESD9X5.0L - - 5.0 V

PESD9X7.0L - - 7.0 V

IRM reverse leakage current

PESD9X5.0L VRWM = 5.0 V - 3 100 nA

PESD9X7.0L VRWM = 7.0 V - 35 500 nA

VBR breakdown voltage IR=1mA

PESD9X5.0L 6.2 - - V

PESD9X7.0L 7.5 - - V

Cddiode capacitance f = 1 MHz;

VR=0V

PESD9X5.0L - 68 100 pF

PESD9X7.0L - 62 100 pF

VCL clamping voltage [1][2]

PESD9X5.0L IPP =10A - - 18 V

IPP =1A - - 10 V

PESD9X7.0L IPP =10A - - 18 V

IPP =1A - - 11 V

rdyn dynamic resistance IR=10A [2][3] -0.4-Ω

Product data sheet Rev. 1 — 16 December 2010 5 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

(1) PESD9X5.0L; VRWM =5.0V

(2) PESD9X7.0L; VRWM =7.0V

Fig 3. Relative variation of peak pulse powe r as a

function of junction temperature; typical

values

Fig 4. Relative variation of reverse leakage current

as a function of junction temperature; typical

values

f=1MHz; T

amb =25°C

(1) PESD9X5.0L

(2) PESD9X7.0L

Fig 5. Diode capacitance as a function of reverse

voltage; typical values Fig 6. V-I character istics for a unidirectional

ESD protection diode

(°C)

0 20015050 100

001aaa633

0.4

0.8

1.2

PP(25°C)

006aac494

10−1

Tj (°C)

−100 150100050−50

IRM

IRM(25°C)

(1)

(2)

VR (V)

08624

006aac495

(pF)

(1)

(2)

006aaa407

−V

RWM

−I

P-N

−+

Product data sheet Rev. 1 — 16 December 2010 6 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

Fig 7. PESD9X5.0L: ESD clamping test setup and waveforms

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

006aac49

GND

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 20 V/div

horizontal scale = 10 ns/div

GND

clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 20 V/div

horizontal scale = 10 ns/div

Product data sheet Rev. 1 — 16 December 2010 7 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

Fig 8. PESD9X7.0L: ESD clamping test setup and waveforms

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

006aac49

GND

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 20 V/div

horizontal scale = 10 ns/div

GND

clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 20 V/div

horizontal scale = 10 ns/div

Product data sheet Rev. 1 — 16 December 2010 8 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

7. Application information

The PESD9X5.0L and the PESD9X7.0L are designed for the protection of one

unidirectional data or signal line from the damage caused by ESD and surge pulses.

Both devices may be used on lines where the signal polarities are either positive or

negative with respect to ground. The devices provide a surge capability of 150 W

per line for an 8/20 μs wavef orm.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should b e used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

Fig 9. Application diagram

006aac498

GND

line to be protected

(positive signal polarity)

PESD9X5.0/7.0L

unidirectional protection of one line

GND

line to be protected

(negative signal polarity)

PESD9X5.0/7.0L

Product data sheet Rev. 1 — 16 December 2010 9 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 10. Package outline SOD882

03-04-17Dimensions in mm

0.55

0.47

0.65

0.62

0.55

0.50

0.46

cathode marking on top side

1.02

0.95

0.30

0.22

0.30

0.22

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

10000

PESD9X5.0L SOD882 2 mm pitch, 8 mm tape and reel -315

PESD9X7.0L

Product data sheet Rev. 1 — 16 December 2010 10 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 11. Reflow soldering footprint SOD882

solder lands

solder resist

occupied area

solder paste

sod882_

0.9

0.3

(2×)

R0.05 (8×)

0.6

(2×)

0.7

(2×)

0.4

(2×)

1.3

0.5

(2×)

0.8

(2×)

0.7

Dimensions in mm

Product data sheet Rev. 1 — 16 December 2010 11 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD9XXL_SER v.1 20101216 Product data sheet - -

Product data sheet Rev. 1 — 16 December 2010 12 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, the

full data sheet shall pre va il.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

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shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

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Notwithstanding any damages that customer might incur for any reason

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customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

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authorized or warranted to be suit able for use in life support, life-critical or

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malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

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NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

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Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development .

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 16 December 2010 13 of 14

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to : salesaddresses@nxp.com

NXP Semiconductors PESD9X5.0L; PESD9X7.0L

Unidirectional ESD protect ion diodes

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 December 2010

Document identifier: PESD9XXL_SER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 8

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14