2–1
MRW54001MOTOROLA RF DEVICE DATA
The RF Line
 
 
. . . designed primarily for large–signal output and driver amplifier stages in the
1.0 to 4.0 GHz frequency range.
Designed for Class A or AB, Common–Emitter Linear Power Amplifiers
Specified 20 Volt, 2.0 GHz Characteristics:
Output Power — 0.5 Watt
Power Gain — 10 to 11 dB
100% Tested for Load Mismatch at All Phase Angles with :1 VSWR
Gold Metallization for Improved Reliability
Diffused Ballast Resistors
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 22 Vdc
Collector–Base Voltage VCES 50 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Operating Junction Temperature TJ200 °C
Storage Temperature Range Tstg 65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 40 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, IB = 0) V(BR)CEO 22 Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mA, VBE = 0) V(BR)CES 50 Vdc
Collector–Base Breakdown Voltage
(IC = 1.0 mA, IE = 0) V(BR)CBO 45 Vdc
Emitter–Base Breakdown Voltage
(IE = 0.25 mA, IC = 0) V(BR)EBO 3.5 Vdc
Collector Cutoff Current
(VCB = 28 V, IE = 0) ICBO 0.25 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V) hFE 20 120
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz) Cob 3.5 pF
(continued)
Order this document
by MRW54001/D

SEMICONDUCTOR TECHNICAL DATA

1011 dB
1.04.0 GHz
0.5 WATT
MICROWAVE LINEAR
POWER TRANSISTORS
CASE 400–01, STYLE 1
(TW200)
Motorola, Inc. 1997
REV 1
MRW54001
2–2 MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 20 V, Pout = 0.5 W, f = 2.0 GHz, IE = 120 mA) GPE 10 dB
Load Mismatch
(VCE = 20 V, IE = 120 mA, Pout = 0.5 W, f = 2.0 GHz,
Load VSWR = :1, All Phase Angles)
ψNo Degradation in Output Power
Cutoff Frequency (VCE = 20 V, IE = 120 mA) fτ4.0 4.5 GHz
Gain Linearity
(VCE = 20 V, IE = 120 mA, f = 2.0 GHz, Po1 = 0.5 W, Po2 = 0.5 mW) LG
0.2
+1.0 dB
Intermodulation Distortion, 3rd Order
(VCE = 20 V, IE = 120 mA, Po (PEP) = 0.5 W,
Tones at 2.0 GHz and 2.005 GHz)
IMD –30 dB
Figure 1. 1.0 dB Compression Point versus
Emitter Current Figure 2. Gain versus Emitter Current
TYPICAL CHARACTERISTICS
Figure 3. Gain and 1.0 dB Compressed Power
versus Frequency Figure 4. DC Safe Operating Area
GPE, UNCOMPRESSED GAIN (dB)
0IE, EMITTER CURRENT (mA)
25
12
11
10 10 V
f = 2 GHz
TFLANGE = 25
°
C
9
8
050 75 100 125
11
10
9
8
7
15 V
VCE = 20 V
P , POWER OUTPUT (WATTS)
out
0IE, EMITTER CURRENT (mA)
1.25
50
1
0.75
0.5
0.25
0100 150 200 250
15 V
10 V
VCE = 20 V
f = 2 GHz
TFLANGE = 25
°
C
GPE, GAIN (dB)
0.1 f, FREQUENCY (GHz)
0.5
30
12345
0.6
0.5
0.4
0.3
0.2
0.1
0
24
18
12
6
0
Po
54001
Gp @ Po = 0.5 W
VCE = 20 V
IE = 120 mA
TFLANGE = 25
°
C
IC, COLLECTOR CURRENT (mA)
0 5 10 15 25
VCE, COLLECTOR–T O–EMITTER VOLTAGE (VOLTS)
20
TFLANGE = 25
°
C
BIAS FOR BEST GAIN
0
500
400
300
200
100
P , POWER OUTPUT (WATTS)
out
22
2–3
MRW54001MOTOROLA RF DEVICE DATA
V
CE
I
C
fS11 S21 S12 S22
VCE
(Volts)
IC
(mA)
f
(GHz) Mag φMag φMag φMag φ
20 100 0.5
1.0
1.3
1.5
1.7
2.0
2.3
2.5
2.7
32
3.3
3.5
3.7
4.0
0.76
0.76
0.76
0.75
0.76
0.76
0.74
0.73
0.72
0.69
0.64
0.61
0.57
0.51
177
159
148
141
134
124
113
106
98
85
71
60
47
24
6.65
3.24
2.46
2.07
1.80
1.51
1.27
1.15
1.06
0.95
0.86
0.81
0.77
0.70
74
39
21
9.0
1.0
–14
–33
–43
–52
–67
–81
–94
103
–119
0.03
0.03
0.04
0.04
0.05
0.06
0.06
0.07
0.07
0.08
0.09
0.10
0.10
0.11
20
24
25
24
24
22
13
9.0
5.0
4.0
–14
–22
–30
–44
0.43
0.50
0.56
0.60
0.64
0.68
0.74
0.76
0.77
0.82
0.85
0.87
0.80
0.92
–73
104
120
130
140
152
167
173
179
170
161
155
149
141
Table 1. MRW54001 Common Emitter S–Parameters
The graph shown below displays MTTF in hours x ampere2
emitter current for each of the devices. Life tests at elevated
temperatures have correlated to better than ±10% to the
theoretical prediction for metal failure. Divide MTTF by IC2 for
MTTF in a particular application.
Figure 5. MTTF Factor versus
Junction Temperature
MTTF F ACTOR (HRS x AMP2)
10,000,000
1,000,000
100,000
10,000
1,000
10080 100 TJ, JUNCTION TEMPERATURE (
°
C)
120 140 160 180 200 220
MRW54001
2–4 MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 400–01
ISSUE B
K
D
F
NC
A
JH
1
2
3
4
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.203 0.207 5.16 5.25
INCHES
C0.049 0.065 1.25 1.65
D0.055 0.065 1.40 1.65
F0.025 0.035 0.64 0.88
H0.017 0.023 0.44 0.58
J0.002 0.004 0.06 0.10
K0.280 0.320 7.12 8.12
N0.123 0.133 3.13 3.37
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
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MRW54001/D