MSTC90
MSTC90 – Rev 0 www.microsemi.com
Oct, 2011 1/4
Module Type
Maximum Ratings
Thermal Characteristics
Thyristor/Diode Modules
VRRM / VDRM 800 to 1600V
ITAV 90Amp
Features
y International standard package
y High Surge Capability
y Glass passivated chip
y Simple Mounting
y Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
TYPE VRRM VRSM
MSTC90-08
MSTC90-12
MSTC90-16
800V
1200V
1600V
900V
1300V
1700V
Symbol Conditions Values Units
ITAV Sine 180o;Tc=85℃ 90 A
ITSM TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
2000
1750 A
i2t TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
20000
15000 A2s
Visol a.c.50HZ;r.m.s.;1min 3000 V
Tvj -40 to 130 ℃
Tstg -40 to 125 ℃
Mt To terminals(M5) 3±15% Nm
Ms To heatsink(M6) 5±15% Nm
di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us 150 A/us
dv/dt TJ= TVJM ,2/3VDRM, linear voltage rise 1000 V/us
a Maximum allowable acceleration 50 m/s2
Weight Module(Approximately) 100 g
Symbol Conditions Values Units
Rth(j-c) Cont.;per thyristor / per module 0.28/0.14 ℃/W
Rth(c-s) per thyristor / per module 0.2/0.1 ℃/W
Circuit
MSTC 13
2
4
7
5
6
Applications
y Power Converters
y Lighting Control
y DC Motor Control and Drives
y Heat and temperature control
MSTC90
MSTC90 – Rev 0 www.microsemi.com
Oct, 2011 2/4
Electrical Characteristics
Values
Symbol Conditions Min. Typ. Max. Units
VTM T=25℃ I
TM =300A 1.65 V
IRRM/IDRM T
VJ =TVJM ,VR=VRRM ,VD=VDRM 20 mA
VTO For power-loss calculations only (TVJ =125℃) 0.9 V
rT T
VJ =TVJM 2 mΩ
VGT TVJ =25℃ , VD =6V 3 V
IGT TVJ =25℃ , VD =6V 150 mA
VGD TVJ =125℃ , VD =2/3VDRM 0.25 V
IGD TVJ =125℃ , VD =2/3VDRM 6 mA
IL TVJ =25℃ , RG = 33 Ω 300 600 mA
IH TVJ =25℃ , VD =6V 150 250 mA
tgd TVJ =25℃, IG=1A, diG/dt=1A/us 1 us
tq TVJ =TVJM 100
us
MSTC90
MSTC90 – Rev 0 www.microsemi.com
Oct, 2011 3/4
Performance Curves
Fi
g
1. Power dissi
p
ation Fig2.Forward Current Derating Curve
0 ITAV 20 40 60 80 100 A 120
140
125
W
100
75
50
25
PTAV
0
rec.30
rec.60
rec.120 sin.180
DC
Fig3. Transient thermal impedance Fig4. Max Non-Repetitive Forward Surge
Current
Fig5. Forward Characteristics
0.001 t 0.01 0.1 1 10 S 100
0.50
℃/ W
0.25
0
Zth(j-C)
Zth(j-S)
10 100 ms 1000
50HZ
2000
A
1000
0
0 VTM 0.5 1.0 1.5 V 2.0
300
A
200
100
IT
0
max.
Typ.
25℃
125℃
DC
sin.180
rec.120
rec.60
rec.30
0 Tc 50 100 ℃130
200
A
160
120
80
40
0
ITAVM
MSTC90
MSTC90 – Rev 0 www.microsemi.com
Oct, 2011 4/4
Package Outline Information
CASE: T1
Dimensions in mm
Fig6. Gate trigger Characteristics
1/2·MSCT90
VGD125℃
IGD125℃
IGT
VGT
20V;20Ω
PG(tp)
0.001 IG 0.01 0.1 1 10 A 100
100
V
10
1
VG
0.1
-40℃
25℃
125℃
Tvj
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