DESCRIPTION
The
µ
PD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS
and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin
L2MM (Lead Less Mini Mold) plastic package.
FEATURES
• Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage : VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.
APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)
ORDERING INFORMATION
Part Number Package Marking Supplying Form
µ
PD5702TU-E2 8-pin Lead-Less Minimold 5702 • 8 mm wide embossed taping
• Pin 5, 6, 7, 8 indicates pull-out direction of tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PD5702TU
PRELIMINARY DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10455EJ01V0DS (1st edition)
Date Published November 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2003
Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
µ
PD5702TU
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
NEC Compound Semiconductor Devices 2003
PIN CONNECTION AND INTERNAL BLOCK DIAGRAM
(Top View)
1
2
3
4
8
7
6
5
P
out2
P
out2
GND
P
in1
GND
P
in2
P
in2
P
out1
Q2
Q1
Preliminary Data Sheet PU10455EJ01V0DS
2
µ
PD5702TU
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Conditions Ratings Unit
Drain to Source Voltage VDS TA = +25°C 8.0 V
Gate to Source Voltage VGS TA = +25°C 8.0 V
Drain Current of Q1 Ids1 TA = +25°C 45 mA
Drain Current of Q2 Ids2 TA = +25°C 259 mA
Total Power Dissipation PD TA = +85°C Note 4.33 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −65 to +150 °C
Operating Ambient Temperature TA −40 to +85 °C
Maximum Input Power to Q1 Pin1 TA = +25°C 6 dBm
Maximum Input Power to Q2 Pin2 TA = +25°C 16 dBm
Note Mounted on 33 × 21 mm epoxy glass PW B
RECOMMENDED OPERATING RANGE
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Drain to Source Voltage VDS TA = +25°C 2.7 3.0 3.5 V
Gate to Source Voltage VGS TA = +25°C 0 2.0 2.5 V
Maximum Input Power to Q1 Pin1 VDS = 3V, TA = +25°C 2.0 5.0 dBm
Maximum Input Power to Q2 Pin2 VDS = 3V, TA = +25°C 11.0 15.0 dBm
ELECTRICAL CHARACTERISTICS
(f = 1.9 GHz, VDS = 3.0 V, TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Gate to Source Voltage VGS 1.0 1.9 2.5 V
Power Added Efficiency PAE
Pin = −5 dBm
Pout = +21.0 dBm − 28.0 − %
Drain Current IDSNote − 155 230 mA
Input Return Loss IRL Pin = −20 dBm − 10 − dB
Output Return Loss ORL − 8 − dB
Output Power Pout Pin = −5 dBm 21.0 − − dBm
Power Gain GP 26.0 − − dB
Linear Gain GL Pin = −20 dBm − 26.5 − dB
Adjacent Channel Power Leakage
1 Padj1 Pin = −5 dBm,
∆
600 kHz − −60.0 −55.0 dBc
Adjacent Channel Power Leakage
2 Padj2 Pin = −5 dBm,
∆
900 kHz − −70.0 −60 dBc
Occupied Band Width OBW Pin = −5 dBm − 250 − kHz
Note I
DS is total Drain currents of Q1 and Q2 part.
Preliminary Data Sheet PU10455EJ01V0DS 3
µ
PD5702TU
ELECTRICAL CHARACTERISTICS
(f = 2.4 GHz, TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
VDS = 3.3 V
Gate to Source Voltage VGS − 1.9 − V
Power Added Efficiency PAE
Pin = +2 dBm
Pout = +22.0 dBm − 28.0 − %
Drain Current IDSNote − 180 − mA
Input Return Loss IRL Pin = −20 dBm − 10 − dB
Output Return Loss ORL − 10 − dB
Output Power Pout Pin = +2 dBm 22.0 − − dBm
Power Gain GP 20.0 − − dB
VDS = 3.0 V
Gate to Source Voltage VGS − 1.9 − V
Power Added Efficiency PAE
Pin = +2 dBm
Pout = +21.0 dBm − 27.5 − %
Drain Current IDSNote − 150 − mA
Input Return Loss IRL Pin = −20 dBm − 10 − dB
Output Return Loss ORL − 10 − dB
Output Power Pout Pin = +2 dBm 21.0 − − dBm
Power Gain GP 19.0 − − dB
Note I
DS is total Drain currents of Q1 and Q2 part.
DC CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Q1
On-state Resistance1 Ron1 VDS = 0.1 V, VGS = 6 V − 4.35 − Ω
Drain to Source Breakdown
Voltage1 BVDSS1 IDS = 1.4
µ
A 10.0
− − V
Gate to Source Breakdown
Voltage1 BVGSS1 IGS = 1.4
µ
A 4.0
− − V
Gate Threshold Voltage1 Vth1 VDS = 3.5 V, IDS = 1.4 mA 1.15 1.40 1.65 V
Transconductance1 gm1 VDS = 3.5 V, IDS = 25 mA 50 70 − mS
Q2
On-state Resistance2 Ron2 VDS = 0.1 V, VGS = 6 V − 1.02 − Ω
Drain to Source Breakdown
Voltage2 BVDSS2 IDS = 8.0
µ
A 10.0
− − V
Gate to Source Breakdown
Voltage2 BVGSS2 IGS = 8.0
µ
A 4.0
− − V
Gate Threshold Voltage2 Vth2 VDS = 3.5 V, IDS = 8.0 mA 1.15 1.40 1.65 V
Transconductance2 gm2 VDS = 3.5 V, IDS = 150 mA 290 370 − mS
Preliminary Data Sheet PU10455EJ01V0DS
4
µ
PD5702TU
TYPICAL CHARACTERISTICS (Prelimi nary)
(f = 1.9 GHz, VDS = 3 V, VGS = 2 V, T A = +25 °C, unless otherwise specified)
35
30
25
20
15
10
–5 –10 –5–15 0 5 10
Output Power P
out
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER vs. INPUT POWER
5
0
0
–10
–20
–30
–40
–70
–80 –10 –5–15 10
0 5
P
adj1
(+600 kHz)
P
adj1
(–600 kHz)
P
adj2
(+900 kHz)
P
adj2
(–900 kHz)
–50
–60
Adjacent Channel Power Leakage P
adj
(dBc)
Input Power P
in
(dBm)
Padj vs. INPUT POWER
35
30
25
20
15
10
–5 –10 –5–15 0 5 10
Power Gain G
P
(dB)
Input Power P
in
(dBm)
POWER GAIN vs. INPUT POWER
5
0
250
200
150
0–10 –5–15 10
0 5
100
50
Drain Current I
DS
(mA)
Input Power P
in
(dBm)
DRAIN CURRENT vs. INPUT POWER
Remark The graphs indicate nominal characteristics.
Preliminary Data Sheet PU10455EJ01V0DS 5
µ
PD5702TU
ADJACENT CHANNEL POWER
(f = 1.9 GHz, VDS = 3 V, Pin = −5 dBm, TA = +25°C, unless otherwise specified)
ATTEN 20 dB
RL 5.0 dBm MKR –71.17 dB
600 kHz
Span 2.000 MHz
SWP 10.0 s
Center 1.900 GHz
RBW 1.0 kHz VBW 3.0 kHz
D
10 dB/
Remark The graphs indicate nominal characteristics.
Preliminary Data Sheet PU10455EJ01V0DS
6
µ
PD5702TU
TYPICAL CHARACTERISTICS (Prelimi nary)
(f = 2.4 GHz, VDS = 3 V, VGS = 2 V, T A = +25 °C, unless otherwise specified)
35
30
25
20
15
10
–5 –10 –5–15 0 5 10
Output Power P
out
(dBm)
Input Power P
in
(dBm)
OUTPUT POWER vs. INPUT POWER
5
0
35
30
25
20
15
10
–5 –10 –5–15 0 5 10
Power Gain G
P
(dB)
Input Power P
in
(dBm)
POWER GAIN vs. INPUT POWER
5
0
250
200
150
0–10 –5–15 10
0 5
100
50
Drain Current I
DS
(mA)
Input Power P
in
(dBm)
DRAIN CURRENT vs. INPUT POWER
Remark The graphs indicate nominal characteristics.
Preliminary Data Sheet PU10455EJ01V0DS 7
µ
PD5702TU
PACKAGE DIMENSIONS
8-PIN LEAD-LESS MINIMOLD (UNIT: mm)
5702
123 4
8 7 6 5
4 3 2 1
56 7 8
2.2
2.0
0.1
0.5
2.0
0.4
0.4 1.4
0.75
0.75
0.25 0.25 0.16
(Bottom View)
(Top View)
Preliminary Data Sheet PU10455EJ01V0DS
8
µ
PD5702TU
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
VPS Peak temperature (package surface temperature) : 215°C or below
Time at temperature of 200°C or higher : 25 to 40 seconds
Preheating time at 120 to 150°C : 30 to 60 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
VP215
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (pin temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Preliminary Data Sheet PU10455EJ01V0DS 9
µ
PD5702TU
M8E 00. 4 - 0110
The information in this document is current as of November, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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•
•
•
•
•
•
Preliminary Data Sheet PU10455EJ01V0DS
10
µ
PD5702TU
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
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TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0310
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
For further information, please contact
µ
PD5702TU
