Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
Low Gate Charge BVDSS 80V
▼
Single Drive Requirement RDS(ON) 90mΩ
▼
Fast Switchi ng Perf ormance ID15A
Description
Absolute M aximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25
℃
A
ID@TC=100
℃
A
IDM A
PD@TC=25
℃
W
W/
℃
TSTG
℃
TJ
℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.6
℃
/W
Rthj-a 62.5
℃
/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110
℃
/W
Data and specifications subject to change without notice
200908192
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 34.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.28
Continuous Drain Current, VGS @ 10V 9
Pulsed Drain Current150
Gate-Source Voltage +25
Continuous Drain Current, VGS @ 10V 15
Parameter Rating
Drain-Source Voltage 80
1
AP9987GH/J
RoHS-compliant Pr oduct
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9987GJ) are
available for low-profile applications.
GDSTO-251(J)
GDSTO-252(H)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 80 - - V
ΔB
VDSS/
Δ
TjBreakdown Volt age Temperature Coefficient Reference to 25
℃
, ID=1mA - 0.09 - V/
℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=10A - - 90 mΩ
VGS=4.5V, ID=7A - - 105 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=5V, ID=10A - 15 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=125oC) VDS=64V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=10A - 11 18 nC
Qgs Gate-Source Charge VDS=64V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC
td(on) Turn-on Delay Time2VDS=40V - 8 - ns
trRise Time ID=10A - 12 - ns
td(off) Turn-off Delay Time RG=3.3
Ω,
VGS=10V - 19 - ns
tfFall Time RD=4
Ω
-3-
ns
Ciss Input Capacitance VGS=0V - 980 1570 pF
Coss Output Capacitance VDS=25V - 75 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
RgGate Resistance f=1.0MHz - 1.1 1.7 Ω
Source-Drai n Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=10A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=10A, VGS=0V,-33-ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 44 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS P RODUCT IS SENSITIVE TO E LECTROSTAT IC DISCHA RGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT A S A CRITICAL COMPONENT I N LIFE SUP PORT OR OTHER S IMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBE D
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RI GHT S, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTI O N OR DESIGN.
2
AP9987GH/J
AP9987GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
036912
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
10
20
30
036912
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
VG=3.0V
10V
7.0V
5.0V
4.5V
60
100
140
180
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=7A
TC=25oC
0.4
0.7
1.0
1.3
1.6
1.9
-50 0 50 100 150
Tj , Junc tion T empera tur e ( oC)
Normalized RDS(ON)
ID=10A
VG=10V
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junc tion T empera tur e ( oC)
Normalized VGS(th) (V)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source- to- D rain Voltage ( V)
IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Qrr
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP9987GH/J
Q
VG
4.5V
QGS QGD
QG
Charge
0
4
8
12
16
0 5 10 15 20 25
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=10A
VDS =40V
VDS =50V
VDS =64V
10
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width ( s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1.0
10.0
100.0
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
100us
1ms
10ms
100ms
DC
TC=25oC
Single Pulse
0
10
20
30
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
Operation in this
area limited by
RDS(ON)
