© Semiconductor Components Industries, LLC, 2017
May, 2018 − Rev. 0 1Publication Order Number:
NSPU5201/D
NSPU5201, NSPU5221
Series
ESD and Surge Protection
Diode
Low Clamping Voltage
Features
•Unidirectional High Voltage ESD and Surge Protection
•Provides ESD Protection to IEC61000−4−2 Level 4:
±30 kV Contact Discharge
•Small Package: 1.8 mm x 2.0 mm
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
APPLICATION DIAGRAM
Vc c (1,2)
DAP**
**Die Attach Pad on
back of package
(connect to ground)
GND (5,7)
GND (6,8) MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
BLOCK DIAGRAM
www.onsemi.com
UDFN6
(Pb−Free) 3000 / Tape &
Reel
NSPU5201MUTBG
UDFN6
CASE 517CS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
XX M
G
1
Cathode Anode
UDFN6
(Pb−Free) 3000 / Tape &
Reel
NSPU5221MUTBG
NSPU5201, NSPU5221 Series
www.onsemi.com
2
Table 1. PIN DESCRIPTIONS
6−Lead, UDFN8 Package
Pin Name Description
1 VCC Cathode
2 VCC Cathode
3 N/C No Connect
4 N/C No Connect
5 GND Anode
6 GND Anode
7 GND Anode
8 GND Anode
PACKAGE / PINOUT DIAGRAMS
Pin 1
Marking
6−Lead UDFN
Top View
(Pins Down View) Bottom View
(Pins Up View)
12 4
65
XX M
6 5
1 2 3 4
3
78
ELECTRICAL CHARACTERISTICS
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IFUni−Directional Surge Protection
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
SPECIFICATIONS
Table 2. MAXIMUM RATINGS
Parameter Rating Units
Operating Temperature Range –55 to +125 °C
Storage Temperature Range –65 to +150 °C
Stresses at or above those listed in Maximum Ratings table may cause permanent damage to the device. This is a stress only rating and
operation o f the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Also,
due to variations in test equipment, stresses shown above are averages.
ELECTRICAL CHARACTERISTICS
Device Name Device
Marking
VRWM (V
)
IR @ VRWM A)
Breakdown Voltage IPP (A)
(8 x 20 ms)
VC @ IPP
(8 x 20 ms)
VBR V@ IT (mA) VC (V) IPP (A)
Max Max Min Nom Max Min Max
NSPU5201 AZ 20 1 21.7 22.7 23.7 1 140 31.5 110
NSPU5221 A2 20 1 24 25 26 1 120 33 100
22 2 35 120
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NSPU5201, NSPU5221 Series
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. NSPU5021 Positive Clamping
Voltage vs. Peak Pulse Current (tp = 8/20 s)
Ipk (A)
6040200
0
5
10
15
20
25
30
Vpk @ Ipk (V)
14012010080 160
Figure 2. NSPU5221 Positive Clamping
Voltage vs. Peak Pulse Current (tp = 8/20 s)
TIME (ms)
50
0
Ipp - PEAK PULSE CURRENT - %Ipp
100
tr = rise time to peak value [8 ms]
tf = decay time to half value [20 ms]
trtf
Peak
Value
Half Value
0
Figure 3. IEC61000−4−5 8/20 s Pulse
Waveform
35
40
Ipk (A)
6040200
0
5
10
15
20
25
30
Vpk @ Ipk (V)
14012010080 16
0
35
40
NSPU5201, NSPU5221 Series
www.onsemi.com
4
PACKAGE DIMENSIONS
ÍÍÍ
ÍÍÍ
ÍÍÍ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINALS
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
A
SEATING
PLANE
D
E
0.10 C
A3
A
A1
2X
2X 0.10 C
UDFN6, 1.8 x 2, 0.4P
CASE 517CS
ISSUE O
DIM
A
MIN MAX
MILLIMETERS
0.45 0.55
A1 0.00 0.05
A3 0.125 REF
b0.15 0.25
D
D2
E
E2
e
L
PIN ONE
REFERENCE
0.05 C
0.05 C
NOTE 4
e1/2
D2
E2
4
6
1
L
5
1.80 BSC
0.35 0.55
2.00 BSC
0.74 0.94
0.40 BSC
0.20 0.40
BOTTOM VIEW
MOUNTING FOOTPRINT*
RECOMMENDED
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
2X
L1
DETAIL A
L
ALTERNATE
CONSTRUCTIONS
L
ÇÇ
ÇÇ
ÉÉ
DETAIL B
MOLD CMPDEXPOSED Cu
ALTERNATE
CONSTRUCTION
DET AIL A
DETAIL B
L1 --- 0.15
SIDE VIEW
TOP VIEW
B
6X
C
e1 0.80 BSC
e2 0.95 BSC
2X
A0.07 C
NOTE 3
e2
b
B
4
6
6X
1
5
0.05 C
SUPPLEMENTAL
0.10 C
0.10 C
e1
6X
e
e/2
BOTTOM VIEW
6X
0.48
0.95
0.40
PITCH
6X 0.25
0.40
PITCH
0.55
2X
2.20
2X
0.94
PACKAGE
OUTLINE
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
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Phone: 421 33 790 2910
NSPU5201/D
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