
Features
1 of 5
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
InP HBT
LDMOS
RF MEMS
RF3024
BROADBAND MEDIUM POWER SPDT SWITCH
The RF3024 is a GaAs pHEMT single-pole double-throw (SPDT) switch
designed for general purpose switching applications which require very
low insertion loss, moderate isolation, and medium power handling capa-
bility. The RF3024 is ideally suited for battery-powered and low control
voltage applications.
10MHz to 4GHz Operation
0.25dB Insertion Loss at
1GHz
26dB Isolation at 2GHz
1.8V Minimum Control
Voltage
28dBm P0.1dB at 3V
18dBm P0.1dB at 1.8V
58dBm IP3 at 3V
Applications
Cellular Handset Applications
Antenna Tuning Applications
IEEE 802.11b/g WiFi Applica-
tions
Cellular Infrastructure Appli-
cations
DS120723
Package: SC70, 6-Pin
RF3024
Parameter Specification Unit Condition
Min. Typ. Max.
Insertion Loss 0.25 dB 1GHz
0.3 0.4 dB 2GHz
0.45 dB 3GHz
VSWR 1.15 1GHz
1.2 2GHz
1.33 3GHz
Isolation 26 dB 1GHz
22 26 dB 2GHz
27 dB 3GHz
P1dB* 31 dBm 1GHz
32 dBm 2GHz
P0.1dB* 28 dBm 1GHz
IP3* 60 dBm 1GHz, 1MHz Spacing, 15dBm per tone
58 dBm 2GHz, 1MHz Spacing, 15dBm per tone
TON, TOFF 40 nS 50% of VCTRL to 10/90% of RF
TRISE, TFALL 30 nS 10/90% RF
Test Conditions: 3.0V, 50, 25°C, with Application Circuit shown herein.
*Note: Performance degrades below 50MHz..