MMBT2222AWT1 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2011

November, 2011 − Rev. 6

1Publication Order Number:

MMBT2222AWT1/D

MMBT2222AWT1G,

SMMBT2222AWT1G

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−323/SC−70 package which

is designed for low power surface mount applications.

Features

AEC−Q101 Qualified and PPAP Capable

S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 40 Vdc

Collector−Base Voltage VCBO 75 Vdc

Emitter−Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

TA = 25C

PD150 mW

Thermal Resistance, Junction−to−Ambient RqJA 833 C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

SC−70

CASE 419

STYLE 3

MARKING DIAGRAM

COLLECTOR

BASE

EMITTER

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MMBT2222AWT1G SC−70

(Pb−Free)

3,000 /

Tape & Reel

(Note: Microdot may be in either location)

SMMBT2222AWT1G SC−70

(Pb−Free)

3,000 /

Tape & Reel

P1 MG

P1 = Specific Device Code

M = Date Code

G= Pb−Free Package

MMBT2222AWT1G, SMMBT2222AWT1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO 40 −

Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO 75 −

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO 6.0 −

Vdc

Base Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

IBL

−20

nAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

ICEX

−10

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain (Note 1)

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

HFE 35

100

−

300

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.3

1.0

Vdc

Base −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat) 0.6

−

1.2

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT300 −

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−8.0

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−30

Input Impedance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hie 0.25 1.25

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hre

−4.0

X 10−4

Small−Signal Current Gain

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hfe 75 375

−

Output Admittance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hoe 25 200

mmhos

Noise Figure

(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)

−4.0

SWITCHING CHARACTERISTICS

Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td−10

Rise Time tr−25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts−225 ns

Fall Time tf−60

1. Pulse Test: Pulse Width v300 ms, Duty Cycle v2.0%.

MMBT2222AWT1G, SMMBT2222AWT1G

http://onsemi.com

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

-2 V < 2 ns

1.0 to 100 ms,

DUTY CYCLE  2.0%

1 kW

+30 V

200

CS* < 10 pF

+16 V

-14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE  2.0%

1 k

+30 V

200

CS* < 10 pF

-4 V

1N914

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

hFE, DC CURRENT GAINVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

TJ = 125C

TJ = 25C

25C

-55C

IC = 1.0 mA 10 mA 150 mA 500 mA

VCE = 1.0 V

VCE = 10 V

MMBT2222AWT1G, SMMBT2222AWT1G

http://onsemi.com

Figure 5. Turn −On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn −Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25C

ts = ts - 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 50

0.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 W

500 mA, RS = 200 W

100 mA, RS = 2.0 kW

50 mA, RS = 4.0 kW

f = 1.0 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current−Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25C

MMBT2222AWT1G, SMMBT2222AWT1G

http://onsemi.com

Figure 11. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.01

0.1

10.10.010.001

0.2

0.3

0.5

0.7

0.8

1.0

1.1

1.3

Figure 13. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.001

0.2

0.3

0.5

0.6

0.7

0.9

1.1

1.2

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

IC/IB = 10

150C

−55C

25C0.4

0.6

0.9

1.2 IC/IB = 10

150C

−55C

25C

0.4

0.8

1.0

VCE = 1 V

150C

−55C

25C

Figure 14. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

+0.5

COEFFICIENT (mV/ C)

-1.0

-1.5

-2.5



RqVC for VCE(sat)

RqVB for VBE

-2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 50

Figure 15. Safe Operating Area

VCE (Vdc)

1001010.10.01

0.001

0.01

0.1

IC (A)

Single Pulse Test

@ TA = 25C

Thermal Limit

100 ms

1 s

10 ms

1 ms

MMBT2222AWT1G, SMMBT2222AWT1G

http://onsemi.com

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MMBT2222AWT1/D

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