REJ03G1570-0200 Rev.2.00 Jul 17, 200 9
Page 1 of 6
HAT2179R
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1570-0200
Rev.2.00
Jul 17, 2009
Features
• Low on-resistance
• Low drive current
• High densit y mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
SSS
DDD
4
123
5678
1234
5
6
7
8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 600 V
Gate to source voltage VGSS ±30 V
Drain current ID 0.7 A
Drain peak current ID (pulse)Note1 2.0 A
Body-drain diode reverse drain current IDR 0.7 A
Body-drain diode reverse drain peak current IDR (pulse)Note1 2.0 A
Channel dissipation Pch Note2 2.5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. W hen using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
HAT2179R
REJ03G1570-0200 Rev.2.00 Jul 17, 200 9
Page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0
Zero gate voltage drain current IDSS — — 1 µA VDS = 600 V, VGS = 0
Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
Gate to source cutoff voltage VGS(off) 3.0 — 5.0 V VDS = 10 V, ID = 1 mA
Forward transfer admittance |yfs| 0.8 1.2 — S ID = 0.4 A, VDS = 10 V Note3
Static drain to source on state
resistance RDS(on) — 3.5 4.5 Ω I
D = 0.4 A, VGS = 10 V Note3
Input capacitance Ciss — 280 — pF
Output capacitance Coss — 31 — pF
Reverse transfer capacitance Crss — 3.8 — pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time td(on) — 24 — ns
Rise time tr — 15 — ns
Turn-off delay time td(off) — 50 — ns
Fall time tf — 58 — ns
ID = 0.4 A
VGS = 10 V
RL = 750 Ω
Rg = 10 Ω
Total gate charge Qg — 10 — nC
Gate to source charge Qgs — 1.6 — nC
Gate to drain charge Qgd — 5.4 — nC
VDD = 480 V
VGS = 10 V
ID = 0.7 A
Body-drain diode forward voltage VDF — 0.8 1.2 V IF = 0.7 A, VGS = 0 Note3
Body-drain diode reverse
recovery time trr — 200 — ns
IF = 0.7 A, VGS = 0
diF/dt = 100 A/µs
Notes: 3. Pulse test
HAT2179R
REJ03G1570-0200 Rev.2.00 Jul 17, 200 9
Page 3 of 6
Main Characteristics
0.1 1 10
3
10
1
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
V
GS
= 10 V
Ta = 25°C
Pulse Test
2.0
1.6
1.2
0.8
0.4
0
40 8 12 16 20
V
GS
= 5 V
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Ta = 25°C
Pulse Test
5.3 V
5.5 V
6 V
10 V
2.0
1.6
1.2
0.8
0.4
0
024 68
10
25°C
−25°C
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
1
0.1
0.01
0.1 1 1000
0.0001
0.001
10
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
10010
Ta = 25°C
1 shot
PW = 100 µs
10 µs
Operation in this
area is limited by
R
DS(on)
10
8
6
4
2
−25 0 25 50 75 100 125 150
0
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
0.7 A
0.4 A
I
D
= 1.4 A
0.1 1 10
1000
100
10
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time (Typical)
di / dt = 100 A / µs
V
GS
= 0, Ta = 25°C
Tc = 75°C
HAT2179R
REJ03G1570-0200 Rev.2.00 Jul 17, 200 9
Page 4 of 6
800
0
16
600 12
400 8
200
0
4
4 8 12 16 20
0
ID = 0.7 A
Ta = 25°C
VDS
VGS
300 V
480 V
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics (Typical)
VDS = 480 V
300 V
100 V
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
0 50 100 150 250200 300
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Gate to Source Cutoff Voltage V
GS(off)
(V)
0
5
-25 0 25 50 75 100 125 150
2
1
3
4
0
1.0
0.4
0.2
0.6
0.8
VDS = 10 V
ID = 10 mA
1 mA
0.1 mA
VGS = 0 V
Ta = 25 °C
Pulse Test
1000
100
10
1
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
VDS = 100 V
HAT2179R
REJ03G1570-0200 Rev.2.00 Jul 17, 200 9
Page 5 of 6
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
Vin Monitor
D.U.T.
Vin
10 V
RL
Vout
Monitor
10 Ω
VDD
= 300 V
10 µ100 µ1 m 10 m 100 m 1 10 100 1000 10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
PDM
PW
T
D = PW
T
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
HAT2179R
REJ03G1570-0200 Rev.2.00 Jul 17, 200 9
Page 6 of 6
Package Dimensions
P-SOP8-3.95 × 4.9-1.27 0.085g
MASS[Typ.]
FP-8DAVPRSP0008DD-D
RENESAS CodeJEITA Package Code Previous Code
A
85
14
F
b
p
c
Detail F
Terminal cross section
1.27
1.08
0.40
L1
0.60
0.25
x
0.460.400.34
0.10
bp
b1
c1
0.250.200.15
MaxNomMin
Dimension in Millimeters
Symbol
Reference
5.3
4.90
D
3.95
E
0.14
A2
6.206.105.80
0.25
1.75
A
0.75
Z
L
8°0°
c
1.27
e
0.1
y
HE
A1
D
*
1
*
2
E
H
E
*
3
xM
b
p
e
Z
(Ni/Pd/Au plating) 2.
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
NOTE)
DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Index mark
A
1
L
1
L
Detail F
y
Package Name
SOP-8
Ordering Information
Part No. Quantity Shipping Container
HAT2179R-EL-E 2500 pcs Taping
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