EGF1A thru EGF1D
Document Number 88579
15-Aug-05
Vishay General Semiconductor
www.vishay.com
1
P
a
t
e
n
t
e
d
*
®
DO-214BA (GF1)
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
Surface Mount Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
IF(AV) 1.0 A
VRRM 50 V to 200 V
IFSM 30 A
trr 50 ns
VF1.0 V
Tj max. 175 °C
Features
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer, automotive and
Telecommunication
Mechanical Data
Case: DO-214BA, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter Symbol EGF1A EGF1B EGF1C EGF1D Unit
Device Marking Code EA EB EC ED
Maximum repetitive peak reverse voltage VRRM 50 100 150 200 V
Maximum RMS voltage VRMS 35 70 105 140 V
Maximum DC blocking voltage VDC 50 100 150 200 V
Maximum average forward rectified current at TL = 125 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 30 A
Operating junction and storage temperature range TJ,TSTG - 65 to + 175 °C
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Document Number 88579
15-Aug-05
EGF1A thru EGF1D
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter Test condition Symbol EGF1A EGF1B EGF1C EGF1D Unit
Maximum instantaneous forward
voltage (1)
at 1.0 A VF 1.0 V
Maximum DC reverse current at
rated DC blocking voltage (1)
TA= 25 °C
TA= 125 °C
IR 5.0
50
µA
Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr 50 ns
Typical junction capacitance at 4.0 V, 1 MHz CJ 15 pF
Parameter Symbol EGF1A EGF1B EGF1C EGF1D Unit
Typical thermal resistance (1) RθJA
RθJL
85
30
°C/W
Figure 1. Maximum Forward Current Derating Curve
0
1.0
0 25 50 75 100 125 150 175
Average Forward Rectified Current (A)
Lead Temperature ( °C)
0.5
Resistive or Inductive Load
P.C.B. Mounted on 0.2 x 0.2"
(5.0 x 5.0mm) Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
5.0
10
15
20
25
30
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 H
Z
T
J
=T
J
max.
8.3ms Single Half Sine-Wave
EGF1A thru EGF1D
Document Number 88579
15-Aug-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
0.01
0.1
10
1
50
Instantaneous Forward Current (A)
1.8
Pulse Width = 300 µs
1% Duty Cycle
T
J
=25°C
T
J
= 150°C
020 6040 10080
InstantaneousReverse Leakage Current
(µA)
Percent of Rated Peak Reverse Voltage (%)
TJ=25°C
TJ= 100°C
TJ= 150°C
0.01
0.1
10
1
100
1000
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 1 10 100
20
10
30
40
50
60
70
0
T
J
=25°C
f = 1.0 MH
Z
Vsig = 50mVp-p
Pulse Duration, sec. (t)
Transient Thermal Impedance (°C/W)
0.01 0.1 1 10 100
100
10
1
0.1
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118(3.00)
0.040 (1.02)
0.066 (1.68)
0.098(2.49)
0.108(2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 MAX.
(1.93 MAX.)
0.220
(5.58)REF
0.060 MIN.
(1.52 MIN.)
MountingPad Layout
Cathode Band
0.066 MIN.
(1.68 MIN.)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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