MAC12SNG - ON Semiconductor

December, 2005 − Rev. 3 1Publication Order Number:

MAC12SM/D

MAC12SM, MAC12SN

Preferred Device

Sensitive Gate Triacs

Silicon Bidirectional Thyristors

Designed for industrial and consumer applications for full wave

control of AC loads such as appliance controls, heater controls, motor

controls, and other power switching applications.

Features

•Sensitive Gate Allows Triggering by Microcontrollers and other

Logic Circuits

•Blocking Voltage to 800 Volts

•On-State Current Rating of 12 Amperes RMS at 70°C

•High Surge Current Capability − 90 Amperes

•Rugged, Economical TO−220AB Package

•Glass Passivated Junctions for Reliability and Uniformity

•Maximum Values of IGT, VGT and IH Specified for Ease of Design

•High Commutating di/dt − 8.0 A/ms Minimum at 110°C

•Immunity to dV/dt − 15 V/msec Minimum at 110°C

•Operational in Three Quadrants: Q1, Q2, and Q3

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetit iv e Off−Stat e Voltage (Note 1 )

(TJ = −40 to 110°C, Sine Wave,

50 to 60 Hz, Gate Open) MAC12SM

MAC12SN

VDRM,

VRRM 600

800

On-State RMS Current

(All Conduction Angles; TC = 70°C) IT(RMS) 12 A

Peak Non-Repetitive Surge Current

(One Full Cycle Sine Wave, 60 Hz,

TJ = 110°C)

ITSM 90 A

Circuit Fusing Consideration (t = 8.33 ms) I2t 33 A2sec

Peak Gate Power

(Pulse Width = 1.0 msec, TC = 70°C) PGM 16 W

Average Gate Power

(t = 8.3 msec, TC = 70°C) PG(AV) 0.35 W

Operating Junction Temperature Range TJ−40 to 110 °C

Storage Temperature Range Tstg −40 to 150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

TO−220AB

CASE 221A−09

STYLE 4

http://onsemi.com

MAC12SxG

AYWW

MARKING

DIAGRAM

x = M, or N

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

Preferred devices are recommended choices for future use

and best overall value.

Device Package Shipping

ORDERING INFORMATION

MAC12SN TO−220AB 50 Units / Rail

MAC12SNG TO−220AB

(Pb−Free) 50 Units / Rail

MAC12SM TO−220AB 50 Units / Rail

MAC12SMG TO−220AB

(Pb−Free) 50 Units / Rail

MT1

MT2

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

MAC12SM, MAC12SN

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THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction−to−Case

Junction−to−Ambient RqJC

RqJA 2.2

62.5 °C/W

Maximum Lead Temperature for Soldering Purposes 1/ 8 ″ from Cas e for 10 Sec onds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 110°C

IDRM,

IRRM −

−−

−0.01

2.0

ON CHARACTERISTICS

Peak On-State Voltage (Note 2)

(ITM = ±17 A) VTM − − 1.85 V

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IGT −

−

1.5

2.5

2.7

5.0

Holding Current

(VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH− 2.5 10 mA

Latching Current (VD = 12 V, IG = 5 mA)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

IL−

−

3.0

5.0

3.0

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT 0.45

0.45

0.68

0.62

0.67

1.5

DYNAMIC CHARACTERISTICS

Critical Rate of Change of Commutating Current

(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C,

f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)

(di/dt)c8.0 10 − A/ms

Critical Rate of Rise of Off-State Voltage

(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C) dV/dt 15 40 − V/ms

Repetitive Critical Rate of Rise of On-State Current

IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz di/dt − − 10 A/ms

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 − VTM

VTM Maximum On State Voltage

IHHolding Current

MAC12SM, MAC12SN

http://onsemi.com

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT −+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

TJ, JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current

versus Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

IGT, GATE TRIGGER CURRENT (mA)

VGT, GATE TRIGGER VOLTAGE (VOLTS)

−40 −10 20 50 80 110

100

0.85

0.40

Figure 2. Typical Gate Trigger Voltage

versus Junction Temperature

−25 5 35 65 95

0.50

0.60

0.70

0.75

0.80

−40 −10 20 50 80 110−25 5 35 65 95

0.90

0.1 0.45

0.55

0.65

MAC12SM, MAC12SN

http://onsemi.com

180°

30°

, LATCHING CURRENT (mA)

TJ, JUNCTION TEMPERATURE (°C)

, HOLDING CURRENT (mA)

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Latching Current

versus Junction Temperature Figure 4. Typical Holding Current

versus Junction Temperature

100

0.1

−40 −10 20 50 80 110−25 5 35 65 95 −40 −10 20 50 80 110−25 5 35 65 95

Figure 5. Typical RMS Current Derating

IT(RMS), RMS ON-STATE CURRENT (AMPS)

110

86420

TC, CASE TEMPERATURE (C)°

Figure 6. On-State Power Dissipation

IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 128620

P(AV), AVERAGE POWER DISSIPATION (WATTS)

060

MT2 Positive

MT2 Negative

Q2 Q1

1210

30°, 60°

90°

180°

120°

104

0.1

100

90°

60°

Figure 7. Typical On-State Characteristics

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

100

0.5

, INSTANTANEOUS ON-STATE CURRENT (AMPS)

1.5 2.5 3.5 4.5

0.1

Figure 8. Typical Thermal Response

t, TIME (ms)

r(t), TRANSIENT THERMAL RESISTANC

(NORMALIZED)

0.1

0.01 1000

10001001010.1

Maximum @ TJ = 110°C

Typical @ TJ = 25°C

Maximum @ TJ = 25°C

MAC12SM, MAC12SN

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PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

SEATING

PLANE

−T−

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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Phone: 81−3−5773−3850

MAC12SM/D

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