© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 3 1Publication Order Number:
MAC12SM/D
MAC12SM, MAC12SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of AC loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Features
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70°C
High Surge Current Capability − 90 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Maximum Values of IGT, VGT and IH Specified for Ease of Design
High Commutating di/dt − 8.0 A/ms Minimum at 110°C
Immunity to dV/dt − 15 V/msec Minimum at 110°C
Operational in Three Quadrants: Q1, Q2, and Q3
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetit iv e Off−Stat e Voltage (Note 1 )
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open) MAC12SM
MAC12SN
VDRM,
VRRM 600
800
V
On-State RMS Current
(All Conduction Angles; TC = 70°C) IT(RMS) 12 A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 110°C)
ITSM 90 A
Circuit Fusing Consideration (t = 8.33 ms) I2t 33 A2sec
Peak Gate Power
(Pulse Width = 1.0 msec, TC = 70°C) PGM 16 W
Average Gate Power
(t = 8.3 msec, TC = 70°C) PG(AV) 0.35 W
Operating Junction Temperature Range TJ−40 to 110 °C
Storage Temperature Range Tstg 40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
TO−220AB
CASE 221A−09
STYLE 4
1
http://onsemi.com
MAC12SxG
AYWW
MARKING
DIAGRAM
x = M, or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
23
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MAC12SN TO−220AB 50 Units / Rail
MAC12SNG TO−220AB
(Pb−Free) 50 Units / Rail
MAC12SM TO−220AB 50 Units / Rail
MAC12SMG TO−220AB
(Pb−Free) 50 Units / Rail
MT1
G
MT2
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
MAC12SM, MAC12SN
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient RqJC
RqJA 2.2
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/ 8 from Cas e for 10 Sec onds TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 110°C
IDRM,
IRRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ±17 A) VTM 1.85 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
1.5
2.5
2.7
5.0
5.0
5.0
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH 2.5 10 mA
Latching Current (VD = 12 V, IG = 5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
3.0
5.0
3.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT 0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C,
f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)
(di/dt)c8.0 10 A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C) dV/dt 15 40 V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz di/dt 10 A/ms
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 − VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MAC12SM, MAC12SN
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3
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT + IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
Q2
Q1
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
IGT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (VOLTS)
40 10 20 50 80 110
100
1
0.85
0.40
Q3
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
25 5 35 65 95
10
0.50
0.60
0.70
0.75
0.80
40 10 20 50 80 11025 5 35 65 95
Q2
Q1
0.90
0.1 0.45
0.55
0.65
Q3
MAC12SM, MAC12SN
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4
180°
DC
30°
, LATCHING CURRENT (mA)
TJ, JUNCTION TEMPERATURE (°C)
, HOLDING CURRENT (mA)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Latching Current
versus Junction Temperature Figure 4. Typical Holding Current
versus Junction Temperature
100
1
10
100
0.1
10
40 10 20 50 80 11025 5 35 65 95 40 10 20 50 80 11025 5 35 65 95
Figure 5. Typical RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMPS)
110
90
80
70
86420
TC, CASE TEMPERATURE (C)°
Figure 6. On-State Power Dissipation
IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 128620
20
15
5
10
P(AV), AVERAGE POWER DISSIPATION (WATTS)
060
25
IH
MT2 Positive
MT2 Negative
IL
Q3
Q2 Q1
1210
30°, 60°
90°
180°
DC
120°
104
0.1
1
100
90°
60°
Figure 7. Typical On-State Characteristics
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
0.5
I
T
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
1.5 2.5 3.5 4.5
10
1
0.1
Figure 8. Typical Thermal Response
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANC
E
(NORMALIZED)
1
0.1
0.01 1000
0
10001001010.1
Maximum @ TJ = 110°C
Typical @ TJ = 25°C
Maximum @ TJ = 25°C
MAC12SM, MAC12SN
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5
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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MAC12SM/D
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