1
P ow er Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB0949 (2SB949) and 2SB0949A (2SB949A)
■Features
●High foward current transfer ratio hFE
●High-speed switching
●Full-pack package which can be installed to the heat sink with
one screw
■Absolute Maximum Ratings (TC=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
80
60
80
5
4
2
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD1275
2SD1275A
2SD1275
2SD1275A
T
C
=25°C
Ta=25°C
■Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VBE
VCE(sat)
fT
ton
tstg
tf
Conditions
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
1
1
2
2
2
10000
2.8
2.5
Unit
mA
mA
mA
V
V
V
MHz
µs
µs
µs
2SD1275
2SD1275A
2SD1275
2SD1275A
2SD1275
2SD1275A
*hFE2 Rank classification
Rank Q P
hFE2 2000 to 5000
4000 to 10000
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3 0.7±0.1
14.0±0.5
Solder Dip 4.0
0.5
+0.2
–0.1
1.4±0.1 1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
Note)The part numbers in the parenthesis show conventional part number.
2
P ow er Transistors 2SD1275, 2SD1275A
PC—Ta I
C—V
CE IC—V
BE
VCE(sat) —I
ChFE —I
CCob —V
CB
Area of safe operation (ASO) Rth(t) —t
0 16040 12080 14020 10060
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(W)
0654132
0
5
4
3
2
1
T
C
=25˚C
I
B
=2.0mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
03.20.8 2.41.6
0
10
8
6
4
2
V
CE
=4V
T
C
=100˚C –25˚C
25˚C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A)
0.01 0.1 1 100.03 0.3 3
0.01
0.03
0.1
0.3
1
3
10
30
100 I
C
/I
B
=250
100˚C
25˚C
T
C
=–25˚C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V)
0.01 0.1 1 100.03 0.3 3
10
10
2
10
3
10
4
10
5
V
CE
=4V
25˚C
–25˚C
T
C
=100˚C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1 1 10 1000.3 3 30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25˚C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF)
1 10 100 10003 30 300
0.01
0.03
0.1
0.3
1
3
10
30
100 Non repetitive pulse
T
C
=25˚C
I
CP
I
C
t=10ms
DC
1ms
2SD1275
2SD1275A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
10
–4
1010
–3
10
–1
10
–2
110
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t) (˚C/W)
Please read the following notes before using the datasheets
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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2001 MAR
