Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB0949 (2SB949) and 2SB0949A (2SB949A) Unit: mm Absolute Maximum Ratings Parameter 0.70.1 (TC=25C) Symbol Collector to 2SD1275 base voltage 2SD1275A Collector to 2SD1275 emitter voltage 2SD1275A Ratings Unit 60 VCBO 60 VCEO VEBO 5 V ICP 4 A Collector current IC 2 A Ta=25C Junction temperature Tj Storage temperature Tstg 35 2SD1275A Collector cutoff 2SD1275 current 2SD1275A Collector to emitter 2SD1275 voltage 2SD1275A Forward current transfer ratio 4.20.2 7.50.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) B 150 C -55 to +150 C ICBO ICEO Conditions min 1 1 VCE = 30V, IB = 0 2 VCE = 40V, IB = 0 2 VEB = 5V, IC = 0 2 60 IC = 30mA, IB = 0 hFE1 VCE = 4V, IC = 1A 1000 VCE = 4V, IC = 2A 2000 hFE2 max VCB = 80V, IE = 0 VCEO * typ VCB = 60V, IE = 0 VBE VCE = 4V, IC = 2A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE2 3 Internal Connection Base to emitter voltage *h 2 E IEBO Emitter cutoff current 1 C Symbol 2SD1275 2.540.25 (TC=25C) Parameter current +0.2 0.5 -0.1 W 2 Electrical Characteristics Collector cutoff 0.80.1 1.30.2 5.080.5 Peak collector current dissipation 1.40.1 V 80 PC 3.10.1 V 80 Emitter to base voltage Collector power TC=25C 16.70.3 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw 2.70.2 4.0 14.00.5 5.50.2 Solder Dip Features 4.20.2 10.00.2 IC = 2A, IB1 = 8mA, IB2 = -8mA, VCC = 50V Unit mA mA mA V 80 10000 2.8 2.5 V V 20 MHz 0.5 s 4 s 1 s Rank classification Rank hFE2 Q P 2000 to 5000 4000 to 10000 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1275, 2SD1275A PC -- Ta IC -- VCE 40 (1) 30 20 (2) 10 10 TC=25C 4 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 3 2 0.4mA 0.2mA 1 25C TC=100C -25C 1.6 2.4 6 4 2 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (C) 1 2 3 4 5 6 0 Collector to emitter voltage VCE (V) VCE(sat) -- IC hFE -- IC Cob -- VCB 25C TC=-25C 1 100C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 104 1000 TC=100C 103 25C -25C 102 0.1 0.3 1 3 Area of safe operation (ASO) t=10ms ICP 3 1ms IC 1 DC 0.3 0.03 0.01 1 3 10 30 2SD1275A 2SD1275 0.1 100 300 Collector to emitter voltage VCE 1000 (V) 30 10 3 0.3 1 3 10 30 Rth(t) -- t Thermal resistance Rth(t) (C/W) 10 100 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink 102 (1) (2) 10 1 10-1 10-2 10-4 10-3 10-2 10-1 100 Collector to base voltage VCB (V) 103 Non repetitive pulse TC=25C 300 1 0.1 10 Collector current IC (A) 100 30 IE=0 f=1MHz TC=25C 3000 10 0.01 0.03 10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE VCE=4V 10 3.2 10000 IC/IB=250 30 3 0.8 Base to emitter voltage VBE (V) 105 100 Collector current IC (A) Collector current IC (A) 8 (3) (4) 0 2 VCE=4V Collector current IC (A) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC -- VBE 5 Collector current IC (A) Collector power dissipation PC (W) 50 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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