M2S010T-VFG400I - Microsemi SoC

DS0128

Datasheet

IGLOO2 FPGA and SmartFusion2 SoC FPGA

51700128. 12.0 8/18

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 iii

Contents

1 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Revision 12.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Revision 11.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Revision 10.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Revision 9.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.5 Revision 8.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.6 Revision 7.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.7 Revision 6.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.8 Revision 5.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.9 Revision 4.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.10 Revision 3.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.11 Revision 2.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.12 Revision 1.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2 IGLOO2 FPGA and SmartFusion2 SoC FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Device Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.2 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.3 Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.3.1 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.3.2 Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2.3.3 Average Fabric Temperature and Voltage Derating Factors . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2.3.4 Timing Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2.3.5 User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2.3.6 Logic Element Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

2.3.7 Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

2.3.8 FPGA Fabric SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79

2.3.9 Programming Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

2.3.10 Math Block Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

2.3.11 Embedded NVM (eNVM) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

2.3.12 SRAM PUF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

2.3.13 Non-Deterministic Random Bit Generator (NRBG) Characteristics . . . . . . . . . . . . . . . . . . . . 106

2.3.14 Cryptographic Block Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

2.3.15 Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107

2.3.16 On-Chip Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109

2.3.17 Clock Conditioning Circuits (CCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

2.3.18 JTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111

2.3.19 System Controller SPI Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

2.3.20 Power-up to Functional Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

2.3.21 DEVRST_N Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

2.3.22 DEVRST_N to Functional Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

2.3.23 Flash*Freeze Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

2.3.24 DDR Memory Interface Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

2.3.25 SFP Transceiver Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

2.3.26 SerDes Electrical and Timing AC and DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 120

2.3.27 SmartFusion2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122

2.3.28 CAN Controller Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127

2.3.29 USB Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127

2.3.30 MMUART Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

2.3.31 IGLOO2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 iv

Figures

Figure 1 High Temperature Data Retention (HTR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 2 Timing Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 3 Input Buffer AC Loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 4 Output Buffer AC Loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 5 Tristate Buffer for Enable Path Test Point . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 6 Timing Model for Input Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Figure 7 I/O Register Input Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66

Figure 8 Timing Model for Output/Enable Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68

Figure 9 I/O Register Output Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

Figure 10 Input DDR Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

Figure 11 Input DDR Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

Figure 12 Output DDR Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

Figure 13 Output DDR Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Figure 14 LUT-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

Figure 15 Sequential Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

Figure 16 Sequential Module Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

Figure 17 Power-up to Functional Timing Diagram for SmartFusion2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115

Figure 18 Power-up to Functional Timing Diagram for IGLOO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

Figure 19 DEVRST_N to Functional Timing Diagram for SmartFusion2 . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

Figure 20 DEVRST_N to Functional Timing Diagram for IGLOO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

Figure 21 I2C Timing Parameter Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

Figure 22 SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) . . . . . . . . . . . . . . . . . . . . . 127

Figure 23 SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) . . . . . . . . . . . . . . . . . . . . . 130

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 v

Tables

Table 1 IGLOO2 and SmartFusion2 Design Security Densities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Table 2 IGLOO2 and SmartFusion2 Data Security Densities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Table 3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 5 FPGA Operating Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 6 Embedded Operating Flash Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 7 Device Storage Temperature and Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 8 High Temperature Data Retention (HTR) Lifetime . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 9 Package Thermal Resistance of SmartFusion2 and IGLOO2 Devices . . . . . . . . . . . . . . . . . . . . . 11

Table 10 Quiescent Supply Current Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Table 11 SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.2 V) – Typical Process . . . . . . . 13

Table 12 Currents During Program Cycle, 0 °C < = TJ <= 85 °C – Typical Process . . . . . . . . . . . . . . . . . . . 14

Table 13 Currents During Verify Cycle, 0 °C <= TJ <= 85 °C – Typical Process . . . . . . . . . . . . . . . . . . . . . . 14

Table 14 SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.26 V) – Worst-Case Process . . 14

Table 15 Average Junction Temperature and Voltage Derating Factors for Fabric Timing Delays . . . . . . . . 15

Table 16 Inrush Currents at Power up, –40 °C <= TJ <= 100 °C – Typical Process . . . . . . . . . . . . . . . . . . . 15

Table 17 Timing Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 18 Maximum Data Rate Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions . 20

Table 19 Maximum Data Rate Summary Table for Voltage-Referenced I/O in Worst-Case

Industrial Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Table 20 Maximum Data Rate Summary Table for Differential I/O in Worst-Case Industrial Conditions . . . 21

Table 21 Maximum Frequency Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions . 21

Table 22 Maximum Frequency Summary Table for Voltage-Referenced I/O in Worst-Case Industrial

Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Table 23 Maximum Frequency Summary Table for Differential I/O in Worst-Case Industrial Conditions . . . 22

Table 24 Input Capacitance, Leakage Current, and Ramp Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Table 25 I/O Weak Pull-up/Pull-down Resistances for DDRIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Table 26 I/O Weak Pull-Up/Pull-Down Resistances for MSIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Table 27 I/O Weak Pull-up/Pull-down Resistances for MSIOD I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Table 28 Schmitt Trigger Input Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Table 29 LVTTL/LVCMOS 3.3 V DC Recommended DC Operating Conditions (Applicable to MSIO I/O Bank

Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Table 30 LVTTL/LVCMOS 3.3 V Input Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . 25

Table 31 LVCMOS 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . . . 25

Table 32 LVTTL 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . . . . . 25

Table 33 LVTTL/LVCMOS 3.3 V AC Maximum Switching Speed (Applicable to MSIO I/O Bank Only) . . . . 25

Table 34 LVTTL/LVCMOS 3.3 V AC Test Parameter Specifications (Applicable to MSIO I/O Bank Only) . . 26

Table 35 LVTTL/LVCMOS 3.3 V Transmitter Drive Strength Specifications for MSIO I/O Bank . . . . . . . . . . 26

Table 36 LVTTL/LVCMOS 3.3 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . 26

Table 37 LVTTL/LVCMOS 3.3 V Transmitter Characteristics for MSIO I/O Bank (Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table 38 LVCMOS 2.5 V DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 39 LVCMOS 2.5 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 40 LVCMOS 2.5 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 41 LVCMOS 2.5 V AC Minimum and Maximum Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 42 LVCMOS 2.5 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table 43 LVCMOS 2.5 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Table 44 LVCMOS 2.5 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Table 45 LVCMOS 2.5 V Receiver Characteristics (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Table 46 LVCMOS 2.5 V Transmitter Characteristics for DDRIO Bank (Output and Tristate Buffers) . . . . . 28

Table 47 LVCMOS 2.5 V Transmitter Characteristics for MSIO Bank (Output and Tristate Buffers) . . . . . . 29

Table 48 LVCMOS 2.5 V Transmitter Characteristics for MSIOD Bank (Output and Tristate Buffers) . . . . . 30

Table 49 LVCMOS 1.8 V DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Table 50 LVCMOS 1.8 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 vi

Table 51 LVCMOS 1.8 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Table 52 LVCMOS 1.8 V Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Table 53 LVCMOS 1.8 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 54 LVCMOS 1.8 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 55 LVCMOS 1.8 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 56 LVCMOS 1.8 V Receiver Characteristics (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 57 LVCMOS 1.8 V Transmitter Characteristics for DDRIO I/O Bank with Fixed Code (Output and Tristate

Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Table 58 LVCMOS 1.8 V Transmitter Characteristics for MSIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 59 LVCMOS 1.8 V Transmitter Characteristics for MSIOD I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 60 LVCMOS 1.5 V DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 61 LVCMOS 1.5 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 62 LVCMOS 1.5 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 63 LVCMOS 1.5 V AC Minimum and Maximum Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 64 LVCMOS 1.5 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 65 LVCMOS 1.5 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 66 LVCMOS 1.5 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 67 LVCMOS 1.5 V Receiver Characteristics for DDRIO I/O Bank with Fixed Codes (Input Buffers) . 35

Table 68 LVCMOS 1.5 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . 35

Table 69 LVCMOS 1.5 V Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . 35

Table 70 LVCMOS 1.5 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . 35

Table 71 LVCMOS 1.5 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . 36

Table 72 LVCMOS 1.5 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) . . 37

Table 73 LVCMOS 1.2 V DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Table 74 LVCMOS 1.2 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Table 75 LVCMOS 1.2 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Table 76 LVCMOS 1.2 V Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Table 77 LVCMOS 1.2 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Table 78 LVCMOS 1.2 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Table 79 LVCMOS 1.2 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Table 80 LVCMOS 1.2 V Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input Buffers) . . 38

Table 81 LVCMOS 1.2 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . 38

Table 82 LVCMOS 1.2 V Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . 39

Table 83 LVCMOS 1.2 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . 39

Table 84 LVCMOS 1.2 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . 39

Table 85 LVCMOS 1.2 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) . . 40

Table 86 PCI/PCI-X DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Table 87 PCI/PCI-X DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Table 88 PCI/PCI-X DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Table 89 PCI/PCI-X Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Table 90 PCI/PCI-X AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Table 91 PCI/PCIX AC Switching Characteristics for Receiver for MSIO I/O Bank (Input Buffers) . . . . . . . . 41

Table 92 PCI/PCIX AC switching Characteristics for Transmitter for MSIO I/O Bank (Output and Tristate

Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Table 93 HSTL Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Table 94 HSTL DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Table 95 HSTL DC Output Voltage Specification Applicable to DDRIO I/O Bank Only . . . . . . . . . . . . . . . . . 42

Table 96 HSTL DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 97 HSTL AC Differential Voltage Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 98 HSTL Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 99 HSTL Impedance Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 100 HSTL AC Test Parameter Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 101 HSTL Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input Buffers) . . . . . . . . . . 43

Table 102 HSTL Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . 43

Table 103 DDR1/SSTL2 DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Table 104 DDR1/SSTL2 DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Table 105 DDR1/SSTL2 DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Table 106 DDR1/SSTL2 DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Table 107 SSTL2 AC Differential Voltage Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 vii

Table 108 SSTL2 Minimum and Maximum AC Switching Speeds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Table 109 SSTL2 AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Table 110 DDR1/SSTL2 AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Table 111 SSTL2 Receiver Characteristics for DDRIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . 45

Table 112 SSTL2 Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . 45

Table 113 DDR1/SSTL2 Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . 46

Table 114 SSTL2 Class I Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers) . . . 46

Table 115 DDR1/SSTL2 Class I Transmitter Characteristics for MSIO I/O Bank (Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Table 116 DDR1/SSTL2 Class I Transmitter Characteristics for MSIOD I/O Bank (Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Table 117 DDR1/SSTL2 Class II Transmitter Characteristics for DDRIO I/O Bank (Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Table 118 DDR1/SSTL2 Class II Transmitter Characteristics for MSIO I/O Bank (Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Table 119 SSTL18 DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Table 120 SSTL18 DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Table 121 SSTL18 DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Table 122 SSTL18 DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Table 123 SSTL18 AC Differential Voltage Specifications (Applicable to DDRIO Bank Only) . . . . . . . . . . . . 47

Table 124 SSTL18 Minimum and Maximum AC Switching Speed (Applicable to DDRIO Bank Only) . . . . . . 48

Table 125 SSTL18 AC Impedance Specifications (Applicable to DDRIO Bank Only) . . . . . . . . . . . . . . . . . . . 48

Table 126 SSTL18 AC Test Parameter Specifications (Applicable to DDRIO Bank Only) . . . . . . . . . . . . . . . 48

Table 127 DDR2/SSTL18 Receiver Characteristics for DDRIO I/O Bank with Fixed Code . . . . . . . . . . . . . . . 48

Table 128 DDR2/SSTL18 Transmitter Characteristics (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . 48

Table 129 SSTL15 DC Recommended DC Operating Conditions (for DDRIO I/O Bank Only) . . . . . . . . . . . . 49

Table 130 SSTL15 DC Input Voltage Specification (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . . 49

Table 131 SSTL15 DC Output Voltage Specification (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . 49

Table 132 SSTL15 DC Differential Voltage Specification (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . 49

Table 133 SSTL15 AC SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only) . 50

Table 134 SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only) . . . . . . . . . . . 50

Table 135 SSTL15 AC Calibrated Impedance Option (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . 50

Table 136 SSTL15 AC Test Parameter Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . 50

Table 137 DDR3/SSTL15 Receiver Characteristics for DDRIO I/O Bank – with Calibration Only . . . . . . . . . 50

Table 138 DDR3/SSTL15 Transmitter Characteristics (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . 51

Table 139 LPDDR DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

Table 140 LPDDR DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

Table 141 LPDDR DC Output Voltage Specification Reduced Drive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

Table 142 LPDDR DC Output Voltage Specification Full Drive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

Table 143 LPDDR DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

Table 144 LPDDR AC Differential Voltage Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . 52

Table 145 LPDDR AC Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

Table 146 LPDDR AC Calibrated Impedance Option (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . 52

Table 147 LPDDR AC Test Parameter Specifications (for DDRIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . 52

Table 148 LPDDR Receiver Characteristics for DDRIO I/O Bank with Fixed Codes . . . . . . . . . . . . . . . . . . . 53

Table 149 LPDDR Reduced Drive for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . 53

Table 150 LPDDR Full Drive for DDRIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . 53

Table 151 LPDDR-LVCMOS 1.8 V Mode Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . 53

Table 152 LPDDR-LVCMOS 1.8 V Mode DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Table 153 LPDDR-LVCMOS 1.8 V Mode DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Table 154 LPDDR-LVCMOS 1.8 V Minimum and Maximum AC Switching Speeds . . . . . . . . . . . . . . . . . . . . 54

Table 155 LPDDR-LVCMOS 1.8 V Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 156 LPDDR-LVCMOS 1.8 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 157 LPDDR-LVCMOS 1.8 V Mode Transmitter Drive Strength Specification for DDRIO Bank . . . . . . 54

Table 158 LPDDR-LVCMOS 1.8V AC Switching Characteristics for Receiver (for DDRIO I/O Bank with Fixed

Code - Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 159 LPDDR-LVCMOS 1.8 V AC Switching Characteristics for Transmitter for DDRIO I/O Bank (Output

and Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 160 LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 viii

Table 161 LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Table 162 LVDS DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Table 163 LVDS DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Table 164 LVDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Table 165 LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Table 166 LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Table 167 LVDS25 Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . 57

Table 168 LVDS25 Receiver Characteristics for MSIOD I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . 57

Table 169 LVDS25 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . 57

Table 170 LVDS25 Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers) . . . . . . . . 57

Table 171 LVDS33 Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . 57

Table 172 LVDS33 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers) . . . . . . . . . 57

Table 173 B-LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 174 B-LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 175 B-LVDS DC Output Voltage Specification (for MSIO I/O Bank Only) . . . . . . . . . . . . . . . . . . . . . . . 58

Table 176 B-LVDS DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 177 B-LVDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 178 B-LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 179 B-LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58

Table 180 B-LVDS AC Switching Characteristics for Receiver for MSIO I/O Bank (Input Buffers) . . . . . . . . . 59

Table 181 B-LVDS AC Switching Characteristics for Receiver for MSIOD I/O Bank (Input Buffers) . . . . . . . . 59

Table 182 B-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate

Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Table 183 M-LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Table 184 M-LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Table 185 M-LVDS DC Voltage Specification Output Voltage Specification (for MSIO I/O Bank Only) . . . . . 60

Table 186 M-LVDS Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

Table 187 M-LVDS Minimum and Maximum AC Switching Speed for MSIO I/O Bank . . . . . . . . . . . . . . . . . . 60

Table 188 M-LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

Table 189 M-LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

Table 190 M-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) . . . . . . . 60

Table 191 M-LVDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers) . . . . . . 60

Table 192 M-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate

Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 193 Mini-LVDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 194 Mini-LVDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 195 Mini-LVDS DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 196 Mini-LVDS DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 197 Mini-LVDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 198 Mini-LVDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

Table 199 Mini-LVDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Table 200 Mini-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) . . . . . . 62

Table 201 Mini-LVDS AC Switching Characteristics for Transmitter for MSIO I/O Bank (Output and Tristate

Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Table 202 Mini-LVDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and Tristate

Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62

Table 203 RSDS Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Table 204 RSDS DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Table 205 RSDS DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Table 206 RSDS Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Table 207 RSDS Minimum and Maximum AC Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Table 208 RSDS AC Impedance Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Table 209 RSDS AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63

Table 210 RSDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers) . . . . . . . . . 64

Table 211 RSDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers) . . . . . . . . 64

Table 212 RSDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

Table 213 RSDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 ix

Table 214 LVPECL Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

Table 215 LVPECL DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64

Table 216 LVPECL DC Differential Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Table 217 LVPECL Minimum and Maximum AC Switching Speeds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Table 218 LVPECL Receiver Characteristics for MSIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Table 219 Input Data Register Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67

Table 220 Output/Enable Data Register Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

Table 221 Input DDR Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

Table 222 Output DDR Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

Table 223 Combinatorial Cell Propagation Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

Table 224 Register Delays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

Table 225 150 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

Table 226 090 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

Table 227 050 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

Table 228 025 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

Table 229 010 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79

Table 230 005 Device Global Resource . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79

Table 231 RAM1K18 – Dual-Port Mode for Depth × Width Configuration 1K × 18 . . . . . . . . . . . . . . . . . . . . . 79

Table 232 RAM1K18 – Dual-Port Mode for Depth × Width Configuration 2K × 9 . . . . . . . . . . . . . . . . . . . . . . 80

Table 233 RAM1K18 – Dual-Port Mode for Depth × Width Configuration 4K × 4 . . . . . . . . . . . . . . . . . . . . . . 81

Table 234 RAM1K18 – Dual-Port Mode for Depth × Width Configuration 8K × 2 . . . . . . . . . . . . . . . . . . . . . . 83

Table 235 RAM1K18 – Dual-Port Mode for Depth × Width Configuration 16K × 1 . . . . . . . . . . . . . . . . . . . . . 84

Table 236 RAM1K18 – Two-Port Mode for Depth × Width Configuration 512 × 36 . . . . . . . . . . . . . . . . . . . . 85

Table 237 µSRAM (RAM64x18) in 64 × 18 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86

Table 238 µSRAM (RAM64x16) in 64 × 16 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87

Table 239 µSRAM (RAM128x9) in 128 × 9 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88

Table 240 µSRAM (RAM128x8) in 128 × 8 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89

Table 241 µSRAM (RAM256x4) in 256 × 4 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91

Table 242 µSRAM (RAM512x2) in 512 × 2 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92

Table 243 µSRAM (RAM1024x1) in 1024 × 1 Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93

Table 244 JTAG Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

Table 245 JTAG Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

Table 246 JTAG Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

Table 247 2 Step IAP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

Table 248 2 Step IAP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

Table 249 2 Step IAP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

Table 250 SmartFusion2 Cortex-M3 ISP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

Table 251 SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

Table 252 SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . 97

Table 253 Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (Fabric Only) . . . . . 97

Table 254 Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (eNVM Only) . . . . . 97

Table 255 Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates (Fabric and eNVM) . 98

Table 256 JTAG Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99

Table 257 JTAG Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99

Table 258 JTAG Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99

Table 259 2 Step IAP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

Table 260 2 Step IAP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

Table 261 2 Step IAP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

Table 262 SmartFusion2 Cortex-M3 ISP Programming (Fabric Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101

Table 263 SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101

Table 264 SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM) . . . . . . . . . . . . . . . . . . . . . . . . . 101

Table 265 Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric Only) . . . . 102

Table 266 Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (eNVM Only) . . . . 102

Table 267 Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric and eNVM) 102

Table 268 Math Blocks with all Registers Used . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

Table 269 Math Block with Input Bypassed and Output Registers Used . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

Table 270 Math Block with Input Register Used and Output in Bypass Mode . . . . . . . . . . . . . . . . . . . . . . . . 104

Table 271 Math Block with Input and Output in Bypass Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

Table 272 eNVM Read Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 x

Table 273 eNVM Page Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

Table 274 SRAM PUF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

Table 275 Non-Deterministic Random Bit Generator (NRBG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

Table 276 Cryptographic Block Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

Table 277 Electrical Characteristics of the Crystal Oscillator – High Gain Mode (20 MHz) . . . . . . . . . . . . . . 107

Table 278 Electrical Characteristics of the Crystal Oscillator – Medium Gain Mode (2 MHz) . . . . . . . . . . . . 108

Table 279 Electrical Characteristics of the Crystal Oscillator – Low Gain Mode (32 kHz) . . . . . . . . . . . . . . . 108

Table 280 Electrical Characteristics of the 50 MHz RC Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109

Table 281 Electrical Characteristics of the 1 MHz RC Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109

Table 282 IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Specification . . . . . . . . . . . . . . . . . . . . . . . . 110

Table 283 IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Jitter Specifications . . . . . . . . . . . . . . . . . . . 111

Table 284 JTAG 1532 for 005, 010, 025, and 050 Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111

Table 285 JTAG 1532 for 060, 090, and 150 Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112

Table 286 System Controller SPI Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

Table 287 Supported I/O Configurations for System Controller SPI (for MSIO Bank Only) . . . . . . . . . . . . . 113

Table 288 Power-up to Functional Times When MSS/HPMS is Used . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

Table 289 Power-up to Functional Times When MSS/HPMS is not Used . . . . . . . . . . . . . . . . . . . . . . . . . . . 115

Table 290 DEVRST_N Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

Table 291 DEVRST_N to Functional Times When MSS/HPMS is Used . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

Table 292 DEVRST_N to Functional Times When MSS/HPMS is not Used . . . . . . . . . . . . . . . . . . . . . . . . . 118

Table 293 Flash*Freeze Entry and Exit Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

Table 294 DDR Memory Interface Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

Table 295 SFP Transceiver Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

Table 296 Transmitter Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

Table 297 Receiver Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

Table 298 SerDes Protocol Compliance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

Table 299 SerDes Reference Clock AC Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122

Table 300 HCSL Minimum and Maximum DC Input Levels (Applicable to SerDes REFCLK Only) . . . . . . . 122

Table 301 HCSL Minimum and Maximum AC Switching Speeds (Applicable to SerDes REFCLK Only) . . . 122

Table 302 Maximum Frequency for MSS Main Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122

Table 303 I2C Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123

Table 304 I2C Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124

Table 305 SPI Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

Table 306 CAN Controller Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127

Table 307 USB Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127

Table 308 MMUART Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

Table 309 Maximum Frequency for HPMS Main Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

Table 310 SPI Characteristics for All Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

Revision History

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 1

1 Revision History

The revision history describes the changes that were implemented in the document. The changes are

listed by revision, starting with the current publication.

1.1 Revision 12.0

The following is a summary of the changes in revision 11.0 of this document.

• A note about SERDES_[01]_VDD supply was added to recommended operating conditions table.

See Table 4, page 7.

• A note about VID was added to LVDS DC differential voltage specification. See Table 163, page 56.

• Updated Table 286, page 113. Table 288, page 114, Table 289, page 115, Ta ble 29 0, page 116,

Table 291, page 116, and Table 292, page 118.

• Updated Table 297, page 121 with RX-CID details.

1.2 Revision 11.0

The following is a summary of the changes in revision 11.0 of this document.

• Updated Table 24, page 23 with minimum and maximum values for input current low and high (SAR

73114 and 80314).

• Added Non-Deterministic Random Bit Generator (NRBG) Characteristics, page 106 (SAR 73114

and 79517).

• Added 060 device in Table 282, page 110 (SAR 79860).

• Added DEVRST_N to Functional Times, page 116 (SAR 73114).

• Added Cryptographic Block Characteristics, page 106 (SAR 73114 and 79516).

• Update Ta bl e 29 6, page 120 with VTX-AMP details (SAR 81756).

• Update note in Table 297, page 121 (SAR 74570 and 80677).

• Update Ta bl e 29 8, page 121 with generic EPCS details (SAR 75307).

• Added Ta ble 3 08 , page 128 (SAR 50424).

1.3 Revision 10.0

The following is a summary of the changes in revision 10.0 of this document.

• The Surge Current on VDD during DEVRST_B Assertion and Surge Current on VDD during Digest

Check using System Services tables were deleted and added reference to AC393: Board Design

Guidelines for SmartFusion2 SoC and IGLOO2 FPGAs Application Note. (SAR 76865 and 76623).

• Added 060 device in Table 4, page 7 (SAR 76383).

• Updated Table 24, page 23 for ramp time input (SAR 72103).

• Added 060 device details in Table 284, page 111 (SAR 74927).

• Updated Table 290, page 116 for name change (SAR 74925).

• Updated Table 283, page 111 for 060 FG676 Package details (SAR 78849).

• Updated Table 305, page 125 for SmartFusion2 and Table 310, page 128 for IGLOO2 for SPI timing

and Fmax (SAR 56645, 75331).

• Updated Table 293, page 119 for Flash*Freeze entry and exit times (SAR 75329, 75330).

• Updated Table 297, page 121 for RX-CID information (SAR 78271).

• Added Ta ble 8 , page 9 and Figure 1, page 10 (SAR 78932).

• Updated Table 223, page 76 for timing characteristics and Ta ble 2 24 , page 77(SAR 75998).

• Added SRAM PUF, page 105 (SAR 64406).

• Added a footnote on digest cycle in Ta ble 5, page 8 (SAR 79812).

1.4 Revision 9.0

The following is a summary of the changes in revision 9.0 of this document.

• Added a note in Table 5, page 8 (SAR 71506).

• Added a note in Table 6, page 9 (SAR 74616).

• Added a note in Figure 3, page 18 (SAR 71506).

Revision History

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 2

• Updated Quiescent Supply Current for 060 in Ta bl e 11 , page 13 and Ta ble 1 2, page 14 (SAR

74483).

• Updated programming currents for 060 in Ta ble 13 , page 14, Ta ble 14 , page 14, and Table 15,

page 15.

• Added DEVRST_B assertion tables (SAR 74708).

• Updated I/O speeds for LVDS 3.3 V in Table 18, page 20 and Table 21, page 21 (SAR 69829).

• Updated Table 24, page 23 (SAR 69418).

• Updated Table 25, page 23, Table 26, page 24, Table 27, page 24 (SAR 74570).

• Updated all AC/DC table to link to the Input Capacitance, Leakage Current, and Ramp Time,

page 23 for reference (SAR 69418).

• Added Ta ble 2 44 , page 94 and Table 256, page 99 (SAR 73971).

• Updated the SerDes Electrical and Timing AC and DC Characteristics, page 120 (SAR 71171).

• Added the DEVRST_N Characteristics, page 116 (SAR 64100, 72103).

• Added Ta ble 2 98 , page 121 (SAR 71897).

• Updated Table 25, page 23, Table 26, page 24, and Ta ble 27 , page 24 (SAR 74570).

• Added 060 devices in Table 277, page 107, Ta ble 27 8, page 108, and Tab le 2 79, page 108 (SAR

57898).

• Updated duty cycle parameter of crystal in Table 280, page 109 and Table 281, page 109 (SAR

57898).

• Added 32 KHz mode PLL acquisition time in Table 282, page 110 (SAR 68281).

• Updated Table 293, page 119 for 060 devices (SAR 57828).

• Updated Table 297, page 121 for CID value (SAR 70878).

1.5 Revision 8.0

The following is a summary of the changes in revision 8.0 of this document.

• Updated Table 11, page 13 (SAR 69218).

• Updated Table 12, page 14 (SAR 69218).

• Updated Table 283, page 111 (SAR 69000).

1.6 Revision 7.0

The following is a summary of the changes in revision 7.0 of this document.

• Updated Table 1, page 5(SAR 68620).

1.7 Revision 6.0

The following is a summary of the changes in revision 6.0 of this document.

• Updated Table 5, page 8 (SAR 65949).

• Updated Table 9, page 11 (SAR 62995).

• Updated Table 123, page 47 and Table 133, page 50 (SAR 67210).

• Added Embedded NVM (eNVM) Characteristics, page 104 (SAR 52509).

• Updated Table 277, page 107 (SAR 64855).

• Updated Table 282, page 110 (SAR 65958 and SAR 56666).

• Added DDR Memory Interface Characteristics, page 119 (SAR 66223).

• Added SFP Transceiver Characteristics, page 120 (SAR 63105).

• Updated Table 302, page 122 and Table 309, page 128 (SAR 66314).

1.8 Revision 5.0

The following is a summary of the changes in revision 5.0 of this document.

• Updated Table 1, page 5.

• Updated Table 4, page 7 for TJ symbol information.

• Updated Table 5, page 8 (SAR 63109).

• Updated Table 9, page 11.

• Updated Table 282, page 110 (SAR 62012).

• Added Ta ble 2 90 , page 116 (SAR 64100).

• Added Ta bl e 30 6, page 127, Table 307, page 127 (SAR 50424).

Revision History

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 3

1.9 Revision 4.0

The following is a summary of the changes in revision 4.0 of this document.

• Updated Table 1, page 5. Changed the Status of 090 devices to "Production" (SAR 62750).

• Updated Figure 10, page 70. Removed inverter bubble from DDR_IN latch (SAR 61418).

• Updated SerDes Electrical and Timing AC and DC Characteristics, page 120 (SAR 62836).

1.10 Revision 3.0

In revision 3.0 of this document, the Theta B/C columns and FCS325 package was updated. For more

information, see Ta ble 9, page 11 (SAR 62002).

1.11 Revision 2.0

The following is a summary of the changes in revision 2.0 of this document.

•Table 1, page 5 was updated (SAR 59056).

•Table 7, page 9 temperature and data retention information was updated SAR (61363).

• Storage Operating Table was updated and split into three tables – Table 5, page 8, Tab le 7 , page 9

(SAR 58725).

• Updated Theta B/C columns and FCS325 package in Ta bl e 9, page 11 (SAR 62002).

• Added 090-FCS325 thermal resistance to Ta ble 9, page 11 (SAR 59384).

• TQ144 package was added to Table 9, page 11 (SAR 57708).

• Added PLL jitter data for the VF400 package (SAR 53162).

• Added Additional Worst Case IDD to Tab le 11 , page 13 and Table 12, page 14 (SAR 59077).

•Table 13, page 14, Table 14, page 14, and Ta ble 15 , page 15 were added to verify Inrush currents

(SAR 56348).

•Table 18, page 20 and Table 21, page 21 – I/O speeds were replaced.

• Max speed was changed in Table 41, page 27 (SAR 57221) and in Table 52, page 30 (SAR 57113).

•Minimum and Maximum DC/AC Input and Output Levels Specification, page 30 and

Table 49, page 30–Table 57, page 32 were added.

• Added Cload to Table 89, page 40 (SAR 56238).

• Removed "Rs" information in DDR Timing Measurement Table 123, page 47, Ta bl e 13 3, page 50,

and Ta bl e 14 4, page 52.

• Updated drive programming for M/B-LVDS outputs (SAR 58154).

• Added an inverter bubble to DDR_IN latch in Figure 10, page 70 (SAR 61418).

• QF waveform in Figure 11, page 71 was updated (SAR 59816).

• uSRAM Write Clock minimum values were updated in Table 237, page 86–Table 243, page 93 (SAR

55236).

• Fixed typo in the 32 kHz Crystal (XTAL) oscillator accuracy data section (SAR 59669).

•The "On-Chip Oscillator" section was split, and the Embedded NVM (eNVM) Characteristics,

page 104 was added. Table 277, page 107–Tab le 2 81, page 109 were revised.(SARs 57898 and

59669).

• PLL VCP Frequency and conditions were added to Ta ble 28 2, page 110 (SAR 57416).

• Fixed typo for PLL jitter data in the 100-400 MHz range (SAR 60727).

• Updated FCCC information in Table 282, page 110 and Ta bl e 28 3, page 111 (SAR 60799).

• Device 025 specifications were added to Ta bl e 28 3, page 111 (SAR 51625).

•JTAG Table 284, page 111 was replaced (SAR 51188).

• Flash*Freeze Table 293, page 119 was replaced (SAR 57828).

• Added support for HCSL I/O Standard for SERDES reference clocks in Ta bl e 30 0, page 122 and

Table 301, page 122 (SAR 50748).

• Tir and Tif parameters were added to Table 303, page 123 (SAR 52203).

• Speed grade consistency was fixed in tables throughout the datasheet (SAR 50722).

• Added jitter attenuation information (SAR 59405).

Revision History

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 4

1.12 Revision 1.0

The following is a summary of the changes in revision 1.0 of this document.

• The IGLOO2 v2 and the SmartFusion2 v5 datasheets are combined into this single product family

datasheet.

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 5

2 IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi’s mainstream SmartFusion®2 SoC and IGLOO®2 FPGA families integrate an industry

standard 4-input lookup table-based (LUT) FPGA fabric with integrated math blocks, multiple embedded

memory blocks, and high-performance SerDes communication interfaces on a single chip. Both families

benefit from low-power flash technology and are the most secure and reliable FPGAs in the industry.

These next generation devices offer up to 150K Logic Elements, up to 5 MBs of embedded RAM, up to

16 SerDes lanes, and up to four PCI Express Gen 2 endpoints, as well as integrated hard DDR3 memory

controllers with error correction.

SmartFusion2 devices integrate an entire low-power, real-time microcontroller subsystem (MSS) with a

rich set of industry-standard peripherals including Ethernet, USB, and CAN, while IGLOO2 devices

integrate a high-performance memory subsystem with on-chip flash, 32 Kbyte embedded SRAM, and

multiple DMA controllers.

2.1 Device Status

The following table shows the design security densities and development status of the IGLOO2 FPGA

and SmartFusion2 SoC FPGA devices.

The following table shows the data security densities and development status of the IGLOO2 FPGA and

SmartFusion2 SoC FPGA devices.

Table 1 • IGLOO2 and SmartFusion2 Design Security Densities

Design Security Device Densities Status

005 Production

010, 010T Production

025, 025T Production

050, 050T Production

060, 060T Production

090, 090T Production

150, 150T Production

Table 2 • IGLOO2 and SmartFusion2 Data Security Densities

Data Security Device Densities Status

005S Production

010TS Production

025TS Production

050TS Production

060TS Production

090TS Production

150TS Production

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 6

2.2 References

The following documents are recommended references:

•PB0121: IGLOO2 Product Brief

•DS0124: IGLOO2 Pin Descriptions

•PB0115: SmartFusion2 SoC FPGA Product Brief

•DS0115: SmartFusion2 Pin Descriptions

All product documentation for IGLOO2 and SmartFusion2 is available at:

http://www.microsemi.com/products/fpga-soc/fpga/igloo2-fpga

http://www.microsemi.com/products/fpga-soc/soc-fpga/smartfusion2#overview

2.3 Electrical Specifications

2.3.1 Operating Conditions

The following table lists the stress limits. Stress applied above the specified limit may cause permanent

damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.

Absolute maximum ratings are stress ratings only; functional operation of the device at these or any

other conditions beyond those listed under the recommended operating conditions specified in the

following table are not implied.

Table 3 • Absolute Maximum Ratings

Parameter Symbol Min Max Unit

DC core supply voltage. Must always power this pin. VDD –0.3 1.32 V

Power supply for charge pumps (for normal operation

and programming). Must always power this pin.

VPP –0.3 3.63 V

Analog power pad for MDDR PLL MSS_MDDR_PLL_VDDA –0.3 3.63 V

Analog power pad for MDDR PLL HPMS_MDDR_PLL_VDDA –0.3 3.63 V

Analog power pad for FDDR PLL FDDR_PLL_VDDA –0.3 3.63 V

Analog power pad for MDDR PLL PLL0_PLL1_MSS_MDDR_VDDA –0.3 3.63 V

Analog power pad for MDDR PLL PLL0_PLL1_HPMS_MDDR_VDDA –0.3 3.63 V

Analog power pad for PLL0–5 CCC_XX[01]_PLL_VDDA –0.3 3.63 V

High supply voltage for PLL SerDes[01] SERDES_[01]_PLL_VDDA –0.3 3.63 V

Analog power for SerDes[01] PLL lane0 to lane3.

This is a 2.5 V SerDes internal PLL supply.

SERDES_[01]_L[0123]_VDDAPLL –0.3 2.75 V

TX/RX analog I/O voltage. Low voltage power for the

lanes of SerDesIF0. This is a 1.2 V SerDes PMA supply.

SERDES_[01]_L[0123]_VDDAIO –0.3 1.32 V

PCIe/PCS power supply SERDES_[01]_VDD –0.3 1.32 V

DC FPGA I/O buffer supply voltage for MSIO I/O bank VDDIx –0.3 3.63 V

DC FPGA I/O buffer supply voltage for MSIOD/DDRIO

I/O banks

VDDIx –0.3 2.75 V

I/O Input voltage for MSIO I/O bank VI–0.3 3.63 V

I/O Input voltage for MSIOD/DDRIO I/O bank VI–0.3 2.75 V

Analog sense circuit supply of embedded nonvolatile

memory (eNVM). Must be shorted to VPP

VPPNVM –0.33.63V

Storage temperature1TSTG –65 150 °C

Junction temperature TJ–55 135 °C

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 7

1. For flash programming and retention maximum limits, see Table 5, page 8. For recommended operating conditions, see Table 4,

page 7.

Table 4 • Recommended Operating Conditions1

Parameter Symbol Min Typ Max Unit Conditions

Operating junction temperature TJ0 25 85 °C Commercial

–40 25 100 °C Industrial

Programming junction temperatures2TJ0 25 85 °C Commercial

–40 25 100 °C Industrial

DC core supply voltage.

Must always power this pin.

VDD 1.14 1.2 1.26 V

Power supply for charge pumps

(for normal operation and

programming) for the 005, 010,

025, 050, 060 devices

VPP 2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

Power supply for charge pumps (for

normal operation and programming)

for the 090 and 150 devices

VPP 3.15 3.3 3.45 V 3.3 V range

Analog power pad for MDDR PLL MSS_MDDR_PLL_VDDA 2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

Analog power pad for MDDR PLL HPMS_MDDR_PLL_VDDA 2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

Analog power pad for FDDR PLL FDDR_PLL_VDDA 2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

Analog power pad for MDDR PLL PLL0_PLL1_MSS_MDDR_V

DDA

2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

Analog power pad for MDDR PLL PLL0_PLL1_HPMS_MDDR_

VDDA

2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

Analog power pad for PLL0 to PLL5 CCC_XX[01]_PLL_VDDA 2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

High supply voltage for PLL

SerDes[01]

SERDES_[01]_PLL_VDDA 2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

Analog power for SerDes[01] PLL

Lane 0 to Lane 3. This is a 2.5 V

SerDes internal PLL supply.

SERDES_[01]_L[0123]_VD

DAPLL

2.375 2.5 2.625 V

TX/RX analog I/O voltage. Low

voltage power for the lanes of

SerDesIF0. This is a 1.2 V SerDes

PMA supply.

SERDES_[01]_L[0123]_VD

DAIO

1.14 1.2 1.26 V

PCIe/PCS power supply SERDES_[01]_VDD 1.14 1.2 1.26 V

1.2 V DC supply voltage VDDIx 1.14 1.2 1.26 V

1.5 V DC supply voltage VDDIx 1.425 1.5 1.575 V

1.8 V DC supply voltage VDDIx 1.71 1.8 1.89 V

2.5 V DC supply voltage VDDIx 2.375 2.5 2.625 V

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 8

Note: Power supply ramps must all be strictly monotonic, without plateaus.

Note: The retention specification is defined as the total number of programing and digest cycles. For example,

20 years of retention after 500 programming cycles.

Note: The digest cycle specification is 2000 digest cycles for every program cycle with a maximum of 500

programming cycles.

Note: If your product qualification requires accelerated programming cycles, see Microsemi SoC Products

Quality and Reliability Report about recommended methodologies.

3.3 V DC supply voltage VDDIx 3.15 3.3 3.45 V

LVDS differential I/O VDDIx 2.375 2.5 3.45 V

B-LVDS, M-LVDS, Mini-LVDS,

RSDS differential I/O

VDDIx 2.375 2.5 2.625 V

LVPECL differential I/O VDDIx 3.15 3.3 3.45 V

Reference voltage supply for FDDR

(Bank0) and MDDR (Bank5)

VREFx 0.49 ×

VDDIx

0.5 ×

VDDIx

0.51 ×

VDDIx

Analog sense circuit supply of

embedded nonvolatile memory

(eNVM). Must be shorted to VPP.

VPPNVM 2.375 2.5 2.625 V 2.5 V range

3.15 3.3 3.45 V 3.3 V range

1. The SERDES_[01]_VDD supply must be connected to VDD.

2. Programming at Industrial temperature range is available only with VPP = 3.3 V.

Table 5 • FPGA Operating Limits

Product

Grade Element

Programming

Temperature

Operating

Temperature

Programming

Cycles

Digest

Temperature

Digest

Cycles

Retention

(Biased/

Unbiased)

Commercial FPGA Min TJ = 0 °C

Max TJ = 85 °C

Min TJ = 0 °C

Max TJ = 85 °C

500 Min TJ = 0 °C

Max TJ = 85 °C

2000 20 years

Industrial1

1. Programming at Industrial temperature range is available only with VPP = 3.3 V.

FPGA Min TJ = –40 °C

Max TJ = 100 °C

Min TJ = –40 °C

Max TJ = 100 °C

500 Min TJ = –40 °C

Max TJ = 100 °C

2000 20 years

Table 4 • Recommended Operating Conditions1 (continued)

Parameter Symbol Min Typ Max Unit Conditions

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 9

The following table lists the embedded operating flash limits.

Note: If your product qualification requires accelerated programming cycles, see Microsemi SoC Products

Quality and Reliability Report about recommended methodologies.

Table 6 • Embedded Operating Flash Limits

Product

Grade Element

Programming

Temperature

Maximum

Operating

Temperature

Programming

Cycles

Retention

(Biased/Unbiased)

Commercial Embedded flash Min TJ = 0 °C

Max TJ = 85 °C

Min TJ = 0 °C

Max TJ = 85 °C

< 1000 cycles per page,

up to two million cycles

per eNVM array

20 years

Min TJ = 0 °C

Max TJ = 85 °C

< 10000 cycles per page,

up to 20 million cycles per

eNVM array

10 years

Industrial Embedded flash Min TJ = –40 °C

Max TJ = 100 °C

Min TJ = –40 °C

Max TJ = 100 °C

< 1000 cycles per page,

up to two million cycles

per eNVM array

20 years

Min TJ = –40 °C

Max TJ = 100 °C

< 10000 cycles per page,

up to 20 million cycles per

eNVM array

10 years

Table 7 • Device Storage Temperature and Retention

Product Grade Storage Temperature (Tstg) Retention

Commercial Min TJ = 0 °C

Max TJ = 85 °C

20 years

Industrial Min TJ = –40 °C

Max TJ = 100 °C

20 years

Table 8 • High Temperature Data Retention (HTR) Lifetime

TJ (C) HTR Lifetime1 (yrs)

1. HTR Lifetime is the period during which a verify failure is not expected due

to flash leakage.

90 20.5

95 20.5

100 20.5

105 17.0

110 15.0

115 13.0

120 11.5

125 10.0

130 8.0

135 6.0

140 4.5

145 3.0

150 1.5

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 10

Figure 1 • High Temperature Data Retention (HTR)

2.3.1.1 Overshoot/Undershoot Limits

For AC signals, the input signal may undershoot during transitions to –1.0 V for no longer than 10% of

the period. The current during the transition must not exceed 100 mA.

For AC signals, the input signal may overshoot during transitions to VCCI + 1.0 V for no longer than 10%

of the period. The current during the transition must not exceed 100 mA.

Note: The above specifications do not apply to the PCI standard. The IGLOO2 and SmartFusion2 PCI I/Os are

compliant with the PCI standard including the PCI overshoot/undershoot specifications.

2.3.1.2 Thermal Characteristics

The temperature variable in the Microsemi SoC Products Group Designer software refers to the junction

temperature, not the ambient, case, or board temperatures. This is an important distinction because

dynamic and static power consumption causes the chip's junction temperature to be higher than the

ambient, case, or board temperatures.

EQ1 through EQ3 give the relationship between thermal resistance, temperature gradient, and power.

EQ 1

EQ 2

EQ 3

JA

TJTA

–

-------------------

JB

TJTB

–

-------------------

JC

TJTC

–

-------------------

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 11

where

JA =Junction-to-air thermal resistance

JB =Junction-to-board thermal resistance

JC =Junction-to-case thermal resistance

TJ=Junction temperature

TA=Ambient temperature

TB=Board temperature (measured 1.0 mm away from the package edge)

TC=Case temperature

P=Total power dissipated by the device

Table 9 • Package Thermal Resistance of SmartFusion2 and IGLOO2 Devices

Device

Still Air 1.0 m/s 2.5 m/s

JB JC UnitJA

005

FG484 19.36 15.81 14.63 9.74 5.27 °C/W

VF256 41.30 38.16 35.30 28.41 3.94 °C/W

VF400 20.19 16.94 15.41 8.86 4.95 °C/W

TQ144 42.80 36.80 34.50 37.20 10.80 °C/W

010

FG484 18.22 14.83 13.62 8.83 4.92 °C/W

VF256 37.36 34.26 31.45 24.84 7.89 °C/W

VF400 19.40 15.75 14.22 8.11 4.22 °C/W

TQ144 38.60 32.60 30.30 31.80 8.60 °C/W

025

FG484 17.03 13.66 12.45 7.66 4.18 °C/W

VF256 33.85 30.59 27.85 21.63 6.13 °C/W

VF400 18.36 14.89 13.36 7.12 3.41 °C/W

FCS325 29.17 24.87 23.12 14.44 2.31 °C/W

050

FG484 15.29 12.19 10.99 6.27 3.24 °C/W

FG896 14.70 12.50 10.90 7.20 4.90 °C/W

VF400 17.53 14.17 12.63 6.32 2.81 °C/W

FCS325 27.38 23.18 21.41 12.47 1.59 °C/W

060

FG484 15.40 12.06 10.85 6.14 3.15 °C/W

FG676 15.49 12.21 11.06 7.07 3.87 °C/W

VF400 17.45 14.01 12.47 6.22 2.69 °C/W

FCS325 27.03 22.91 21.25 12.33 1.54 °C/W

090

FG484 14.64 11.37 10.16 5.43 2.77 °C/W

FG676 14.52 11.19 10.37 6.17 3.24 °C/W

FCS325 26.63 22.26 20.13 14.24 2.50 °C/W

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 12

2.3.1.2.1 Theta-JA

Junction-to-ambient thermal resistance (JA) is determined under standard conditions specified by

JEDEC (JESD-51), but it has little relevance in the actual performance of the product. It must be used

with caution, but it is useful for comparing the thermal performance of one package with another.

The maximum power dissipation allowed is calculated using EQ4.

EQ 4

The absolute maximum junction temperature is 100 °C. EQ5 shows a sample calculation of the absolute

maximum power dissipation allowed for the M2GL050T-FG896 package at commercial temperature and

in still air, where:

EQ 5

The power consumption of a device can be calculated using the Microsemi SoC Products Group power

calculator. The device's power consumption must be lower than the calculated maximum power

dissipation by the package.

If the power consumption is higher than the device's maximum allowable power dissipation, a heat sink

may be attached to the top of the case, or the airflow inside the system must be increased.

2.3.1.2.2 Theta-JB

Junction-to-board thermal resistance (JB) measures the ability of the package to dissipate heat from the

surface of the chip to the PCB. As defined by the JEDEC (JESD-51) standard, the thermal resistance

from the junction to the board uses an isothermal ring cold plate zone concept. The ring cold plate is

simply a means to generate an isothermal boundary condition at the perimeter. The cold plate is

mounted on a JEDEC standard board with a minimum distance of 5.0 mm away from the package edge.

2.3.1.2.3 Theta-JC

Junction-to-case thermal resistance (JC) measures the ability of a device to dissipate heat from the

surface of the chip to the top or bottom surface of the package. It is applicable to packages used with

external heat sinks. Constant temperature is applied to the surface, which acts as a boundary condition.

This only applies to situations where all or nearly all of the heat is dissipated through the surface in

consideration.

2.3.1.3 ESD Performance

See RT0001: Microsemi Corporation - SoC Products Reliability Report for information about ESD.

150

FC1152 9.08 6.81 5.87 2.56 0.38 °C/W

FCS536 15.01 12.06 10.76 3.69 1.55 °C/W

FCV484 16.21 13.11 11.84 6.73 0.10 °C/W

JA = 14.7 °C/W (taken from Table 9, page 11).

TA= 85 °C

Table 9 • Package Thermal Resistance of SmartFusion2 and IGLOO2 Devices (continued)

Device

Still Air 1.0 m/s 2.5 m/s

JB JC UnitJA

Maximum power allowed TJ(MAX) TA(MAX)

–

JA

---------------------------------------------

Maximum power allowed 100 °C 85 °C–

14.7 °C/W

----------------------------------------1.088 W==

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 13

2.3.2 Power Consumption

The following sections describe the power consumptions of the devices.

2.3.2.1 Quiescent Supply Current

Table 10 • Quiescent Supply Current Characteristics

Power Supplies/Blocks

Modes and Configurations

Non-Flash*Freeze Flash*Freeze

FPGA Core On Off

VDD/SERDES_[01]_VDD1

1. SERDES_[01]_VDD Power Supply is shorted to VDD.

On On

VPP/VPPNVM On On

HPMS_MDDR_PLL_VDDA/FDDR_PLL_VDDA/

CCC_XX[01]_PLL_VDDA/PLL0_PLL1_HPMS_MDDR_VDD

0 V 0 V

SERDES_[01]_PLL_VDDA2

2. SerDes and DDR blocks to be unused.

0 V 0 V

SERDES_[01]_L[0123]_VDDAPLL/VDD_2V52On On

SERDES_[01]_L[0123]_VDDAIIO2On On

VDDIx3, 4

3. VDDIx has been set to ON for test conditions as described. Banks on the east side should always be powered with

the appropriate VDDI bank supplies. For details on bank power supplies, see “Recommendation for Unused Bank

Supplies” table in the AC393: SmartFusion2 and IGLOO2 Board Design Guidelines Application Note.

4. No Differential (that is to say, LVDS) I/Os or ODT attributes to be used.

On On

VREFx On On

MSSDDR CLK 32 kHz 32 kHz

RAM On Sleep state

System controller 50 MHz 50 MHz

50 MHz oscillator (enable/disable) Enable Disabled

1 MHz oscillator (enable/disable) Disabled Disabled

Crystal oscillator (enable/disable) Disabled Disabled

Table 11 • SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.2 V) – Typical Process

Symbol Modes 005 010 025 050 060 090 150 Unit Conditions

IDC1 Non-

Flash*Freeze

6.2 6.9 8.9 13.1 15.3 15.4 27.5 mA Typical

(TJ = 25 °C)

24.0 28.4 40.6 67.8 80.6 81.4 144.7 mA Commercial

(TJ = 85 °C)

35.2 41.9 60.5 102.1 121.4 122.6 219.1 mA Industrial

(TJ = 100 °C)

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 14

2.3.2.2 Programming Currents

The following tables represent programming, verify and Inrush currents for SmartFusion2 SoC and

IGLOO2 FPGA devices.

IDC2 Flash*Freeze 1.4 2.6 3.7 5.1 5.0 5.1 8.9 mA Typical

(TJ = 25 °C)

12.0 20.0 26.6 35.3 35.4 35.7 57.8 mA Commercial

(TJ = 85 °C)

18.5 30.8 41.0 54.5 54.5 55.0 89.0 mA Industrial

(TJ = 100 °C)

Table 12 • SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.26 V) – Worst-Case Process

Symbol Modes 005 010 025 050 060 090 150 Unit Conditions

IDC1 Non-

Flash*Freeze

43.8 57.0 84.6 132.3 161.4 163.0 242.5 mA Commercial

(TJ= 85 °C)

65.3 85.7 127.8 200.9 245.4 247.8 369.0 mA Industrial

(TJ = 100 °C)

IDC2 Flash*Freeze 29.1 45.6 51.7 62.7 69.3 70.0 84.8 mA Commercial

(TJ = 85 °C)

44.9 70.3 79.7 96.5 106.8 107.8 130.6 mA Industrial

(TJ = 100 °C)

Table 13 • Currents During Program Cycle, 0 °C < = TJ <= 85 °C – Typical Process

Power Supplies Voltage (V) 005 010 025 050 060 090 1501

1. VPP and VPPNVM are internally shorted.

Unit

VDD 1.26 46 53 55 58 30 42 52 mA

VPP 3.46 8 11 6 10 9 12 12 mA

VPPNVM 3.46 122333 mA

VDDI 2.62 31 16 17 1 12 12 81 mA

3.46 62 31 36 1 12 17 84 mA

Number of banks 7 8 8 10 10 9 19

Table 14 • Currents During Verify Cycle, 0 °C <= TJ <= 85 °C – Typical Process

Power Supplies Voltage (V) 005 010 025 050 060 090 1501

1. VPP and VPPNVM are internally shorted.

Unit

VDD 1.26 44 53 55 58 33 41 51 mA

VPP 3.46 6531581112mA

VPPNVM 3.46 100111 mA

VDDI 2.62 31 16 17 1 12 11 81 mA

3.46 61 32 36 1 12 17 84 mA

Number of banks 7 8 8 10 10 9 19

Table 11 • SmartFusion2 and IGLOO2 Quiescent Supply Current (VDD = 1.2 V) – Typical Process

Symbol Modes 005 010 025 050 060 090 150 Unit Conditions

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 15

2.3.3 Average Fabric Temperature and Voltage Derating Factors

The following table lists the average temperature and voltage derating factors for fabric timing delays

normalized to TJ = 85 °C, in worst-case VDD = 1.14 V.

Table 15 • Inrush Currents at Power up, –40 °C <= TJ <= 100 °C – Typical Process

Power Supplies Voltage (V) 005 010 025 050 060 090 150 Unit

VDD 1.26 25 32 38 48 45 77 109 mA

VPP 3.46 33 49 36 180 13 36 51 mA

VDDI 2.62 134 141 161 187 93 272 388 mA

Number of banks 7 8 8 10 10 9 19

Table 16 • Average Junction Temperature and Voltage Derating Factors for Fabric Timing Delays

Array Voltage VDD (V) –40 °C 0 °C 25 °C 70 °C 85 °C 100 °C

1.14 0.83 0.89 0.92 0.98 1.00 1.02

1.2 0.75 0.80 0.83 0.89 0.91 0.93

1.26 0.690.730.760.810.830.85

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 16

2.3.4 Timing Model

This section describes timing model and timing parameters.

Figure 2 • Timing Model

The following table lists the timing model parameters in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Table 17 • Timing Model Parameters

Index Symbol Description –1 Unit For More Information

PY Propagation delay of DDR3 receiver 1.605 ns See Ta bl e 13 7, page 50

ICLKQ Clock-to-Q of the input data register 0.16 ns See Tab l e 22 1, page 71

TISUD Setup time of the input data register 0.357 ns See Ta ble 22 1, page 71

RCKH Input high delay for global clock 1.53 ns See Ta bl e 22 7, page 78

TRCKL Input low delay for global clock 0.897 ns See Ta bl e 22 7, page 78

PY Input propagation delay of LVDS

receiver

2.774 ns See Ta ble 16 7, page 57

DP Propagation delay of a three-input AND

gate

0.198 ns See Ta ble 22 3, page 76

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 17

DP Propagation delay of an OR gate 0.179 ns See Tabl e 22 3, page 76

DP Propagation delay of an LVDS

transmitter

2.136 ns See Ta ble 16 9, page 57

DP Propagation delay of a three-input XOR

Gate

0.241 ns See Ta ble 22 3, page 76

DP Propagation delay of LVCMOS 2.5 V

transmitter, drive strength of 16 mA on

the MSIO bank

2.412 ns See Table 46, page 28

DP Propagation delay of a two-input NAND

gate

0.179 ns See Ta ble 22 3, page 76

DP Propagation delay of LVCMOS 2.5 V

transmitter, drive strength of 8 mA on

the MSIO bank

2.309 ns See Table 46, page 28

CLKQ Clock-to-Q of the data register 0.108 ns See Ta ble 22 4, page 77

TSUD Setup time of the data register 0.254 ns See Ta bl e 22 4, page 77

DP Propagation delay of a two-input AND

gate

0.179 ns See Ta ble 22 3, page 76

OCLKQ Clock-to-Q of the output data register 0.263 ns See Tabl e 22 0, page 69

TOSUD Setup time of the output data register 0.19 ns See Ta ble 22 0, page 69

DP Propagation delay of SSTL2, Class I

transmitter on the MSIO bank

2.055 ns See Tab l e 114 , page 46

DP Propagation delay of LVCMOS 1.5 V

transmitter, drive strength of 12 mA,

fast slew on the DDRIO bank

3.316 ns See Table 70, page 35

Table 17 • Timing Model Parameters (continued)

Index Symbol Description –1 Unit For More Information

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 18

2.3.5 User I/O Characteristics

There are three types of I/Os supported in the IGLOO2 FPGA and SmartFusion2 SoC FPGA families:

MSIO, MSIOD, and DDRIO I/O banks. The I/O standards supported by the different I/O banks is

described in the I/Os section of the UG0445: IGLOO2 FPGA and SmartFusion2 SoC FPGA Fabric User

Guide.

2.3.5.1 Input Buffer and AC Loading

The following figure shows the input buffer and AC loading.

Figure 3 • Input Buffer AC Loading

TPY

(R)

GND TPY

(F)

TPYS

(R)

TPYS

(F)

50%

PAD Y

TPY

VIH

VCCA

VTRIP

VTRIP VIL

TPYS

TPY = MAX(TPY(R), TPY(F))

TPYS = MAX(TPYS(R), TPYS(F))

Note: TPYS = Schmitt Trigger Input

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 19

2.3.5.2 Output Buffer and AC Loading

The following figure shows the output buffer and AC loading.

Figure 4 • Output Buffer AC Loading

PAD

TDP VTT/VDDI

CLOAD

TDP

TDP = MAX(TDP(R), TDP(F))

PAD

CLOAD

Rtt_test

TDP = MAX(TDP(R), TDP(F))

Single-Ended I/O Test Setup HSTL/PCI Test Setup

TDP

PAD

CLOAD

Rtt_test

TDP = MAX(TDP(R), TDP(F))

Voltage-Referenced, Singled-Ended I/O Test Setup

Differential I/O Test Setup

TDP TPY

PAD_P PAD_P

TDP = MAX(TDP(R), TDP(F)) TPY = MAX(TPY(R), TPY(F))

TPYS = MAX(TPYS(R), TPYS(F))

PAD_N PAD_N

OUT

OUT OUT

OUT

VTT

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 20

2.3.5.3 Tristate Buffer and AC Loading

The tristate path for enable path loadings is described in the respective specifications. The following

figure shows the methodology of characterization illustrated by the enable path test point.

Figure 5 • Tristate Buffer for Enable Path Test Point

2.3.5.4 I/O Speeds

This section describes the maximum data rate summary of I/O in worst-case industrial conditions. See

the individual I/O standards for operating conditions.

Table 18 • Maximum Data Rate Summary Table for Single-Ended I/O in Worst-Case

Industrial Conditions

I/O MSIO MSIOD DDRIO Unit

PCI 3.3 V 630 Mbps

LVTTL 3.3 V 600 Mbps

LVCMOS 3.3 V 600 Mbps

LVCMOS 2.5 V 410 420 400 Mbps

LVCMOS 1.8 V 295 400 400 Mbps

LVCMOS 1.5 V 160 220 235 Mbps

LVCMOS 1.2 V 120 160 200 Mbps

LPDDR-LVCMOS 1.8 V mode 400 Mbps

THZ TZH

TLZ

90% VDDI

10% VDDI

50%

PAD

Data

(D)

Enable

(E)

50%

10% VDDI

TZL

50%

PAD

DOUT

TZL, TZH, THZ, TLZ

Rent to GND for TZH, THZ

50%

Cent TZL, TLZ, TZH, THZ

Rent to VDDI for TZL, TLZ

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 21

Table 19 • Maximum Data Rate Summary Table for Voltage-Referenced I/O in Worst-Case

Industrial Conditions

I/O MSIO MSIOD DDRIO Unit

LPDDR 400 Mbps

HSTL1.5 V 400 Mbps

SSTL 2.5 V 510 700 400 Mbps

SSTL 1.8 V 667 Mbps

SSTL 1.5 V 667 Mbps

Table 20 • Maximum Data Rate Summary Table for Differential I/O in Worst-Case

Industrial Conditions

I/O MSIO MSIOD Unit

LVPECL (input only) 900 Mbps

LVDS 3.3 V 535 Mbps

LVDS 2.5 V 535 700 Mbps

RSDS 520 700 Mbps

BLVDS 500 Mbps

MLVDS 500 Mbps

Mini-LVDS 520 700 Mbps

Table 21 • Maximum Frequency Summary Table for Single-Ended I/O in Worst-Case

Industrial Conditions

I/O MSIO MSIOD DDRIO Unit

PCI 3.3 V 315 MHz

LVTTL 3.3 V 300 MHz

LVCMOS 3.3 V 300 MHz

LVCMOS 2.5 V 205 210 200 MHz

LVCMOS 1.8 V 147.5 200 200 MHz

LVCMOS 1.5 V 80 110 118 MHz

LVCMOS 1.2 V 60 80 100 MHz

LPDDR– LVCMOS 1.8 V mode 200 MHz

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 22

Table 22 • Maximum Frequency Summary Table for Voltage-Referenced I/O in Worst-

Case Industrial Conditions

I/O MSIO MSIOD DDRIO Unit

LPDDR 200 MHz

HSTL1.5 V 200 MHz

SSTL 2.5 V 255 350 200 MHz

SSTL 1.8 V 334 MHz

SSTL 1.5 V 334 MHz

Table 23 • Maximum Frequency Summary Table for Differential I/O in Worst-Case

Industrial Conditions

I/O MSIO MSIOD Unit

LVPECL (input only) 450 MHz

LVDS 3.3 V 267.5 MHz

LVDS 2.5 V 267.5 350 MHz

RSDS 260 350 MHz

BLVDS 250 MHz

MLVDS 250 MHz

Mini-LVDS 260 350 MHz

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 23

2.3.5.5 Detailed I/O Characteristics

The following table lists the minimum and maximum I/O weak pull-up/pull-down resistance values of

DDRIO I/O bank at VOH/VOL Level.

Table 24 • Input Capacitance, Leakage Current, and Ramp Time

Symbol Description Maximum Unit Conditions

CIN Input capacitance 10 pF

IIL (dc) Input current low

(Applicable to HSTL/SSTL inputs only)

400 µA VDDI = 2.5 V

500 µA VDDI = 1.8 V

600 µA VDDI = 1.5 V1

1. Applicable when I/O pair is programmed with an HSTL/SSTL I/O type on IOP and an un-

terminated I/O type (LVCMOS, for example) on ION pad.

Input current low

(Applicable to all other digital inputs)

10 µA

IIH (dc) Input current high

(Applicable to HSTL/SSTL inputs only)

400 µA VDDI = 2.5 V

500 µA VDDI = 1.8 V

600 µA VDDI = 1.5 V1

Input current high

(Applicable to all other digital inputs)

10 µA

TRAMPIN2

2. Voltage ramp must be monotonic.

Input ramp time

(Applicable to all digital inputs)

50 ns

Table 25 • I/O Weak Pull-up/Pull-down Resistances for DDRIO I/O Bank

VDDI Domain

R(WEAK PULL-UP) at VOH () R(WEAK PULL-DOWN) at VOL (

Min Max Min Max

2.5 V1, 2

1. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX).

2. R(WEAK PULL-UP) = (VDDImax – VOHspec)/I(WEAK PULL-UP MIN).

10K 17.8K 9.98K 18K

1.8 V1, 2 10.3K 19.1K 10.3K 19.5K

1.5 V1, 2 10.6K 20.2K 10.6K 21.1K

1.2 V1, 2 11.1K 22.7K 11.2K 24.6K

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 24

The following table lists the minimum and maximum I/O weak pull-up/pull-down resistance values of

MSIO I/O bank at VOH/VOL Level.

The following table lists the minimum and maximum I/O weak pull-up/pull-down resistance values of

MSIOD I/O bank at VOH/VOL Level.

The following table lists the hysteresis voltage value for schmitt trigger mode input buffers.

Table 26 • I/O Weak Pull-Up/Pull-Down Resistances for MSIO I/O Bank

VDDI Domain

R(WEAK PULL-UP) at VOH ( R(WEAK PULL-DOWN) at VOL (

Min Max Min Max

3.3 V 9.9K 17.1K 9.98K 17.5K

2.5 V1, 2

1. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX).

2. R(WEAK PULL-UP) = (VDDImax – VOHspec)/I(WEAK PULL-UP MIN).

10K 17.6K 10.1K 18.4K

1.8 V1, 2 10.4K 19.1K 10.4K 20.4K

1.5 V1, 2 10.7K 20.4K 10.8K 22.2K

1.2 V1, 2 11.3K 23.2K 11.5K 26.7K

Table 27 • I/O Weak Pull-up/Pull-down Resistances for MSIOD I/O Bank

VDDI Domain

R(WEAK PULL-UP) at VOH () R(WEAK PULL-DOWN) at VOL ()

Min Max Min Max

2.5 V1, 2

1. R(WEAK PULL-DOWN) = (VOLspec)/I(WEAK PULL-DOWN MAX).

2. R(WEAK PULL-UP) = (VDDImax – VOHspec)/I(WEAK PULL-UP MIN).

9.6K 16.6K 9.5K 16.4K

1.8 V1, 2 9.7K 17.3K 9.7K 17.1K

1.5 V1, 2 9.9K 18K 9.8K 17.6K

1.2 V1, 2 10.3K 19.6K 10K 19.1K

Table 28 • Schmitt Trigger Input Hysteresis

Input Buffer Configuration Hysteresis Value (Typical, unless otherwise noted)

3.3 V LVTTL/LVCMOS/

PCI/PCI-X

0.05 × VDDI (worst-case)

2.5 V LVCMOS 0.05 × VDDI (worst-case)

1.8 V LVCMOS 0.1 × VDDI (worst-case)

1.5 V LVCMOS 60 mV

1.2 V LVCMOS 20 mV

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 25

2.3.5.6 Single-Ended I/O Standards

2.3.5.6.1 Low Voltage Complementary Metal Oxide Semiconductor (LVCMOS)

LVCMOS is a widely used switching standard implemented in CMOS transistors. This standard is defined

by JEDEC (JESD 8-5). The LVCMOS standards supported in IGLOO2 FPGAs and SmartFusion2 SoC

FPGAs are: LVCMOS12, LVCMOS15, LVCMOS18, LVCMOS25, and LVCMOS33.

2.3.5.6.2 3.3 V LVCMOS/LVTTL

LVCMOS 3.3 V or Low-Voltage Transistor-Transistor Logic (LVTTL) is a general standard for 3.3 V

applications.

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 29 • LVTTL/LVCMOS 3.3 V DC Recommended DC Operating Conditions

(Applicable to MSIO I/O Bank Only)

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 3.15 3.3 3.45 V

Table 30 • LVTTL/LVCMOS 3.3 V Input Voltage Specification (Applicable to MSIO I/O

Bank Only)

Parameter Symbol Min Max Unit

DC input logic high VIH (DC) 2.0 3.45 V

DC input logic low VIL (DC) –0.3 0.8 V

Input current high1

1. See Ta bl e 24 , page 23.

IIH (DC)

Input current low1IIL (DC)

Table 31 • LVCMOS 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank

Only)

Parameter Symbol Min Max Unit

DC output logic high1

1. The VOH/VOL test points selected ensure compliance with LVCMOS 3.3 V JESD8-B

requirements.

VOH VDDI – 0.4 V

DC output logic low1VOL 0.4 V

Table 32 • LVTTL 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only)

Parameter Symbol Min Max Unit

DC output logic high VOH 2.4 V

DC output logic low VOL 0.4 V

Table 33 • LVTTL/LVCMOS 3.3 V AC Maximum Switching Speed (Applicable to MSIO I/O Bank

Only)

Parameter Symbol Max Unit Conditions

Maximum data rate

(for MSIO I/O bank)

DMAX 600 Mbps AC loading: 17 pF load, maximum

drive/slew

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 26

Note: For a detailed I/V curve, use the corresponding IBIS models:

www.microsemi.com/soc/download/ibis/default.aspx.

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 3.0 V

Table 34 • LVTTL/LVCMOS 3.3 V AC Test Parameter Specifications (Applicable to MSIO I/O

Bank Only)

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 1.4 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5pF

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 35 • LVTTL/LVCMOS 3.3 V Transmitter Drive Strength Specifications for MSIO I/O Bank

Output Drive Selection

VOH

(V)

VOL

(V)

IOH (at VOH)

IOL (at VOL)

2 mA VDDI – 0.4 0.4 2 2

4 mA VDDI – 0.4 0.4 4 4

8 mA VDDI – 0.4 0.4 8 8

12 mA VDDI – 0.4 0.4 12 12

16 mA VDDI – 0.4 0.4 16 16

20 mA VDDI – 0.4 0.4 20 20

Table 36 • LVTTL/LVCMOS 3.3 V Receiver Characteristics for MSIO I/O Bank (Input

Buffers)

On-Die Termination

(ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 2.262 2.663 2.289 2.695 ns

Table 37 • LVTTL/LVCMOS 3.3 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 3.192 3.755 3.47 4.083 2.969 3.494 1.856 2.183 3.337 3.926 ns

4 mA Slow 2.331 2.742 2.673 3.145 2.526 2.973 3.034 3.569 4.451 5.236 ns

8 mA Slow 2.135 2.511 2.33 2.741 2.297 2.703 4.532 5.331 4.825 5.676 ns

12 mA Slow 2.052 2.414 2.107 2.479 2.162 2.544 5.75 6.764 5.445 6.406 ns

16 mA Slow 2.062 2.425 2.072 2.438 2.145 2.525 5.993 7.05 5.625 6.618 ns

20 mA Slow 2.148 2.527 1.999 2.353 2.088 2.458 6.262 7.367 5.876 6.913 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 27

2.3.5.7 2.5 V LVCMOS

LVCMOS 2.5 V is a general standard for 2.5 V applications and is supported in IGLOO2 FPGA and

SmartFusion2 SoC FPGAs that are in compliance with the JEDEC specification JESD8-5A.

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 38 • LVCMOS 2.5 V DC Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 2.375 2.5 2.625 V

Table 39 • LVCMOS 2.5 V DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high (for MSIOD

and DDRIO I/O banks)

VIH (DC) 1.7 2.625 V

DC input logic high (for MSIO I/O

bank)

VIH (DC) 1.7 3.45 V

DC input logic low VIL (DC) –0.3 0.7 V

Input current high1

1. See Tab le 24 , page 23.

IIH (DC)

Input current low1IIL (DC)

Table 40 • LVCMOS 2.5 V DC Output Voltage Specification

Parameter Symbol Min Max Unit

DC output logic high VOH1

1. The VOH/VOL test points selected ensure compliance with LVCMOS 2.5 V JEDEC8-5A requirements.

VDDI – 0.4 – V

DC output logic low VOL10.4 V

Table 41 • LVCMOS 2.5 V AC Minimum and Maximum Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for DDRIO I/O bank) DMAX 400 Mbps AC loading: 17 pF load,

maximum drive/slew

Maximum data rate (for MSIO I/O bank) DMAX 410 Mbps AC loading: 17 pF load,

maximum drive/slew

Maximum data rate (for MSIOD I/O bank) DMAX 420 Mbps AC loading: 17 pF load,

maximum drive/slew

Table 42 • LVCMOS 2.5 V AC Calibrated Impedance Option

Parameter Symbol Typ Unit

Supported output driver calibrated impedance (for

DDRIO I/O bank)

Rodt_cal 75, 60, 50, 33,

25, 20



IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 28

Note: For board design considerations, output slew rates extraction, detailed output buffer resistances, and I/V

Curve, use the corresponding IBIS models located at:

www.microsemi.com/soc/download/ibis/default.aspx.

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V

Table 43 • LVCMOS 2.5 V AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 1.2 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5pF

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 44 • LVCMOS 2.5 V Transmitter Drive Strength Specifications

Output Drive Selection VOH (V) VOL (V) IOH (at VOH) mA IOL (at VOL) mA

MSIO I/O

Bank

MSIOD I/O

Bank

DDRIO I/O Bank

(With Software Default

Fixed Code) Min Max

2 mA 2 mA 2 mA VDDI – 0.4 0.4 2 2

4 mA 4 mA 4 mA VDDI – 0.4 0.4 4 4

6 mA 6 mA 6 mA VDDI – 0.4 0.4 6 6

8 mA 8 mA 8 mA VDDI – 0.4 0.4 8 8

12 mA 12 mA 12 mA VDDI – 0.4 0.4 12 12

16 mA 16 mA VDDI – 0.4 0.4 16 16

Table 45 • LVCMOS 2.5 V Receiver Characteristics (Input Buffers)

On-Die Termination

(ODT)

TPY TPYS

Unit–1 –Std –1 –Std

LVCMOS 2.5 V (for DDRIO I/O bank) None 1.823 2.145 1.932 2.274 ns

LVCMOS 2.5 V (for MSIO I/O bank) None 2.486 2.925 2.495 2.935 ns

LVCMOS 2.5 V (for MSIOD I/O bank) None 2.29 2.694 2.305 2.712 ns

Table 46 • LVCMOS 2.5 V Transmitter Characteristics for DDRIO Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 3.657 4.302 3.393 3.991 3.675 4.323 3.894 4.582 3.552 4.18 ns

Medium 3.374 3.97 3.139 3.693 3.396 3.995 3.635 4.277 3.253 3.828 ns

Medium fast 3.239 3.811 3.036 3.572 3.261 3.836 3.519 4.141 3.128 3.681 ns

Fast 3.224 3.793 3.029 3.563 3.246 3.818 3.512 4.132 3.119 3.67 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 29

4 mA Slow 3.095 3.641 2.705 3.182 3.088 3.633 4.738 5.575 4.348 5.116 ns

Medium 2.825 3.324 2.488 2.927 2.823 3.321 4.492 5.285 4.063 4.781 ns

Medium fast 2.701 3.178 2.384 2.804 2.698 3.173 4.364 5.135 3.945 4.642 ns

Fast 2.69 3.165 2.377 2.796 2.687 3.161 4.359 5.129 3.94 4.636 ns

6 mA Slow 2.919 3.434 2.491 2.93 2.902 3.414 5.085 5.983 4.674 5.5 ns

Medium 2.65 3.118 2.279 2.681 2.642 3.108 4.845 5.701 4.375 5.148 ns

Medium fast 2.529 2.975 2.176 2.56 2.521 2.965 4.724 5.558 4.259 5.011 ns

Fast 2.516 2.96 2.168 2.551 2.508 2.95 4.717 5.55 4.251 5.002 ns

8 mA Slow 2.863 3.368 2.427 2.855 2.844 3.346 5.196 6.114 4.769 5.612 ns

Medium 2.599 3.058 2.217 2.608 2.59 3.047 4.952 5.827 4.471 5.261 ns

Medium fast 2.483 2.921 2.114 2.487 2.473 2.91 4.832 5.685 4.364 5.134 ns

Fast 2.467 2.902 2.106 2.478 2.457 2.89 4.826 5.678 4.348 5.116 ns

12 mA Slow 2.747 3.232 2.296 2.701 2.724 3.204 5.39 6.342 4.938 5.81 ns

Medium 2.493 2.934 2.102 2.473 2.483 2.921 5.166 6.078 4.65 5.471 ns

Medium fast 2.382 2.803 2.006 2.36 2.371 2.789 5.067 5.962 4.546 5.349 ns

Fast 2.369 2.787 1.999 2.352 2.357 2.773 5.063 5.958 4.538 5.339 ns

16 mA Slow 2.677 3.149 2.213 2.604 2.649 3.116 5.575 6.56 5.08 5.977 ns

Medium 2.432 2.862 2.028 2.386 2.421 2.848 5.372 6.32 4.801 5.649 ns

Medium fast 2.324 2.734 1.937 2.278 2.311 2.718 5.297 6.233 4.7 5.531 ns

Fast 2.313 2.721 1.929 2.269 2.3 2.706 5.296 6.231 4.699 5.529 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

Table 47 • LVCMOS 2.5 V Transmitter Characteristics for MSIO Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 3.48 4.095 3.855 4.534 3.785 4.453 2.12 2.494 3.45 4.059 ns

4 mA Slow 2.583 3.039 3.042 3.579 3.138 3.691 4.143 4.874 4.687 5.513 ns

6 mA Slow 2.392 2.815 2.669 3.139 2.82 3.317 4.909 5.775 5.083 5.98 ns

8 mA Slow 2.309 2.717 2.565 3.017 2.74 3.223 5.812 6.837 5.523 6.497 ns

12 mA Slow 2.333 2.745 2.437 2.867 2.626 3.089 6.131 7.213 5.712 6.72 ns

16 mA Slow 2.412 2.838 2.335 2.747 2.533 2.979 6.54 7.694 6.007 7.067 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

Table 46 • LVCMOS 2.5 V Transmitter Characteristics for DDRIO Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 30

2.3.5.8 1.8 V LVCMOS

LVCMOS 1.8 is a general standard for 1.8 V applications and is supported in IGLOO2 FPGAs and

SmartFusion2 SoC FPGAs in compliance to the JEDEC specification JESD8-7A.

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 48 • LVCMOS 2.5 V Transmitter Characteristics for MSIOD Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 2.206 2.596 2.678 3.15 2.64 3.106 4.935 5.805 4.74 5.576 ns

4 mA Slow 1.835 2.159 2.242 2.637 2.256 2.654 5.413 6.368 5.15 6.059 ns

6 mA Slow 1.709 2.01 2.132 2.508 2.167 2.549 5.813 6.838 5.499 6.469 ns

8 mA Slow 1.63 1.918 1.958 2.303 2.012 2.367 6.226 7.324 5.816 6.842 ns

12 mA Slow 1.648 1.939 1.86 2.187 1.921 2.259 6.519 7.669 6.027 7.09 ns

Table 49 • LVCMOS 1.8 V DC Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

LVCMOS 1.8 V DC Recommended Operating Conditions

Supply voltage VDDI 1.710 1.8 1.89 V

Table 50 • LVCMOS 1.8 V DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high (for MSIOD

and DDRIO I/O banks)

VIH (DC) 0.65 × VDDI 1.89 V

DC input logic high (for MSIO

I/O bank)

VIH (DC) 0.65 × VDDI 3.45 V

DC input logic low VIL (DC) –0.3 0.35 × VDDI V

Input current high1

1. See Tab le 2 4, page 23.

IIH (DC) –

Input current low1IIL (DC) –

Table 51 • LVCMOS 1.8 V DC Output Voltage Specification

Parameter Symbol Min Max Unit

DC output logic high VOH VDDI – 0.45 V

DC output logic low VOL 0.45 V

Table 52 • LVCMOS 1.8 V Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for DDRIO I/O bank)1

1. Maximum Data Rate applies for Drive Strength 8 mA and above, All Slews.

DMAX 400 Mbps AC loading: 17 pF load, maximum drive/slew

Maximum data rate (for MSIO I/O bank) DMAX 295 Mbps AC loading: 17 pF load, maximum drive/slew

Maximum data rate (for MSIOD I/O bank)1DMAX 400 Mbps AC loading: 17 pF load, maximum drive/slew

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 31

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 1.71 V

Table 53 • LVCMOS 1.8 V AC Calibrated Impedance Option

Parameter Symbol Typ Unit

Supported output driver calibrated

impedance (for DDRIO I/O bank)

Rodt_cal 75, 60, 50,

33, 25, 20



Table 54 • LVCMOS 1.8 V AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 0.9 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2k 

Capacitive loading for enable path (TZH, TZL, THZ,

TLZ)

CENT 5pF

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 55 • LVCMOS 1.8 V Transmitter Drive Strength Specifications

Output Drive Selection VOH (V) VOL (V) IOH (at VOH)

IOL (at VOL)

mAMSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank Min Max

2 mA 2 mA 2 mA VDDI – 0.45 0.45 2 2

4 mA 4 mA 4 mA VDDI – 0.45 0.45 4 4

6 mA 6 mA 6 mA VDDI – 0.45 0.45 6 6

8 mA 8 mA 8 mA VDDI – 0.45 0.45 8 8

10 mA 10 mA 10 mA VDDI – 0.45 0.45 10 10

12 mA 12 mA VDDI – 0.45 0.45 12 12

16 mA1

1. 16 mA drive strengths, all slews, meets LPDDR JEDEC electrical compliance.

VDDI – 0.45 0.45 16 16

Table 56 • LVCMOS 1.8 V Receiver Characteristics (Input Buffers)

On-Die Termination

(ODT)

TPY TPYS

Unit–1 –Std –1 –Std

LVCMOS 1.8 V

(for DDRIO I/O bank

with Fixed Codes)

None 1.968 2.315 2.099 2.47 ns

LVCMOS 1.8 V

(for MSIO I/O bank)

None 2.898 3.411 2.883 3.393 ns

50 3.05 3.59 3.044 3.583 ns

75 2.999 3.53 2.987 3.516 ns

150 2.947 3.469 2.933 3.452 ns

LVCMOS 1.8 V

(for MSIOD I/O bank)

None 2.611 3.071 2.598 3.057 ns

50 2.775 3.264 2.775 3.265 ns

75 2.72 3.2 2.712 3.19 ns

150 2.666 3.137 2.655 3.123 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 32

Table 57 • LVCMOS 1.8 V Transmitter Characteristics for DDRIO I/O Bank with Fixed Code (Output and

Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 4.234 4.981 3.646 4.29 4.245 4.995 4.908 5.774 4.434 5.216 ns

Medium 3.824 4.498 3.282 3.861 3.834 4.511 4.625 5.441 4.116 4.843 ns

Medium fast 3.627 4.267 3.111 3.66 3.637 4.279 4.481 5.272 3.984 4.687 ns

Fast 3.605 4.241 3.097 3.644 3.615 4.253 4.472 5.262 3.973 4.674 ns

4 mA Slow 3.923 4.615 3.314 3.9 3.918 4.61 5.403 6.356 4.894 5.757 ns

Medium 3.518 4.138 2.961 3.484 3.515 4.135 5.121 6.025 4.561 5.366 ns

Medium fast 3.321 3.907 2.783 3.275 3.317 3.903 4.966 5.843 4.426 5.206 ns

Fast 3.301 3.883 2.77 3.259 3.296 3.878 4.957 5.831 4.417 5.196 ns

6 mA Slow 3.71 4.364 3.104 3.652 3.702 4.355 5.62 6.612 5.08 5.977 ns

Medium 3.333 3.921 2.779 3.27 3.325 3.913 5.346 6.289 4.777 5.62 ns

Medium fast 3.155 3.712 2.62 3.083 3.146 3.702 5.21 6.13 4.657 5.479 ns

Fast 3.134 3.688 2.608 3.068 3.125 3.677 5.202 6.12 4.648 5.468 ns

8 mA Slow 3.619 4.258 3.007 3.538 3.607 4.244 5.815 6.841 5.249 6.175 ns

Medium 3.246 3.819 2.686 3.16 3.236 3.807 5.542 6.52 4.936 5.807 ns

Medium fast 3.066 3.607 2.525 2.971 3.054 3.593 5.405 6.359 4.811 5.66 ns

Fast 3.046 3.584 2.513 2.957 3.034 3.57 5.401 6.353 4.803 5.651 ns

10 mA Slow 3.498 4.115 2.878 3.386 3.481 4.096 6.046 7.113 5.444 6.404 ns

Medium 3.138 3.692 2.569 3.023 3.126 3.678 5.782 6.803 5.129 6.034 ns

Medium fast 2.966 3.489 2.414 2.841 2.951 3.472 5.666 6.665 5.013 5.897 ns

Fast 2.945 3.464 2.401 2.826 2.93 3.448 5.659 6.658 5.003 5.886 ns

12 mA Slow 3.417 4.02 2.807 3.303 3.401 4.002 6.083 7.156 5.464 6.428 ns

Medium 3.076 3.618 2.519 2.964 3.063 3.604 5.828 6.856 5.176 6.089 ns

Medium fast 2.913 3.427 2.376 2.795 2.898 3.41 5.725 6.736 5.072 5.966 ns

Fast 2.894 3.405 2.362 2.78 2.879 3.388 5.715 6.724 5.064 5.957 ns

16 mA Slow 3.366 3.96 2.751 3.237 3.348 3.939 6.226 7.324 5.576 6.56 ns

Medium 3.03 3.565 2.47 2.906 3.017 3.55 5.981 7.036 5.282 6.214 ns

Medium fast 2.87 3.377 2.328 2.739 2.854 3.358 5.895 6.935 5.18 6.094 ns

Fast 2.853 3.357 2.314 2.723 2.837 3.338 5.889 6.929 5.177 6.09 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 33

2.3.5.9 1.5 V LVCMOS

LVCMOS 1.5 is a general standard for 1.5 V applications and is supported in IGLOO2 FPGAs and

SmartFusion2 SoC FPGAs in compliance to the JEDEC specification JESD8-11A.

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 58 • LVCMOS 1.8 V Transmitter Characteristics for MSIO I/O Bank

Output Drive

Selection

Slew

Control

TDP TZL TZH THZ1

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 3.441 4.047 4.165 4.9 4.413 5.192 4.891 5.755 5.138 6.044 ns

4 mA Slow 3.218 3.786 3.642 4.284 3.941 4.636 5.665 6.665 5.568 6.551 ns

6 mA Slow 3.141 3.694 3.501 4.118 3.823 4.498 6.587 7.75 6.032 7.096 ns

8 mA Slow 3.165 3.723 3.319 3.904 3.654 4.298 6.898 8.115 6.216 7.313 ns

10 mA Slow 3.202 3.767 3.278 3.857 3.616 4.254 7.25 8.529 6.435 7.571 ns

12 mA Slow 3.277 3.855 3.175 3.736 3.519 4.139 7.392 8.697 6.538 7.692 ns

Table 59 • LVCMOS 1.8 V Transmitter Characteristics for MSIOD I/O Bank

Output Drive

Selection

Slew

Control

TDP TZL TZH THZ1

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 2.725 3.206 3.316 3.901 3.484 4.099 5.204 6.123 4.997 5.88 ns

4 mA Slow 2.242 2.638 2.777 3.267 2.947 3.466 5.729 6.74 5.448 6.41 ns

6 mA Slow 1.995 2.347 2.466 2.901 2.63 3.094 6.372 7.496 5.987 7.043 ns

8 mA Slow 2.001 2.354 2.44 2.87 2.6 3.058 6.633 7.804 6.193 7.286 ns

10 mA Slow 2.025 2.382 2.312 2.719 2.47 2.906 6.94 8.165 6.412 7.544 ns

Table 60 • LVCMOS 1.5 V DC Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 1.425 1.5 1.575 V

Table 61 • LVCMOS 1.5 V DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high for (MSIOD and DDRIO

I/O banks)

VIH (DC) 0.65 × VDDI 1.575 V

DC input logic high (for MSIO I/O bank) VIH (DC) 0.65 × VDDI 3.45 V

DC input logic low VIL (DC) –0.3 0.35 × VDDI V

Input current high1

1. See Table 24, page 23.

IIH (DC) –

Input current low1IIL (DC –

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 34

Note: For a detailed I/V curve, use the corresponding IBIS models:

www.microsemi.com/soc/download/ibis/default.aspx.

Table 62 • LVCMOS 1.5 V DC Output Voltage Specification

Parameter Symbol Min Max Unit

DC output logic high VOH VDDI × 0.75 V

DC output logic low VOL VDDI × 0.25 V

Table 63 • LVCMOS 1.5 V AC Minimum and Maximum Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for DDRIO I/O bank) DMAX 235 Mbps AC loading: 17 pF load, maximum

drive/slew

Maximum data rate (for MSIO I/O bank) DMAX 160 Mbps AC loading: 17 pF load, maximum

drive/slew

Maximum data rate (for MSIOD I/O bank) DMAX 220 Mbps AC loading: 17 pF load, maximum

drive/slew

Table 64 • LVCMOS 1.5 V AC Calibrated Impedance Option

Parameter Symbol Typ Unit

Supported output driver calibrated

impedance (for DDRIO I/O bank)

RODT_CA

75, 60,

50, 40



Table 65 • LVCMOS 1.5 V AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point VTRIP 0.75 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5pF

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 66 • LVCMOS 1.5 V Transmitter Drive Strength Specifications

Output Drive Selection VOH (V) VOL (V) IOH (at VOH)

IOL (at VOL)

mAMSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank Min Max

2 mA 2 mA 2 mA VDDI × 0.75 VDDI × 0.25 2 2

4 mA 4 mA 4 mA VDDI × 0.75 VDDI × 0.25 4 4

6 mA 6 mA 6 mA VDDI × 0.75 VDDI × 0.25 6 6

8 mA 8 mA VDDI × 0.75 VDDI × 0.25 8 8

10 mA VDDI × 0.75 VDDI × 0.25 10 10

12 mA VDDI × 0.75 VDDI × 0.25 12 12

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 35

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 1.425 V

Table 67 • LVCMOS 1.5 V Receiver Characteristics for DDRIO I/O Bank with Fixed

Codes (Input Buffers)

On-Die Termination

(ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 2.051 2.413 2.086 2.455 ns

Table 68 • LVCMOS 1.5 V Receiver Characteristics for MSIO I/O Bank (Input

Buffers)

On-Die Termination

(ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 3.311 3.896 3.285 3.865 ns

50 3.654 4.299 3.623 4.263 ns

75 3.533 4.156 3.501 4.119 ns

150 3.415 4.018 3.388 3.986 ns

Table 69 • LVCMOS 1.5 V Receiver Characteristics for MSIOD I/O Bank (Input

Buffers)

On-Die Termination

(ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 2.959 3.481 2.93 3.447 ns

50 3.298 3.88 3.268 3.845 ns

75 3.162 3.719 3.128 3.68 ns

150 3.053 3.592 3.021 3.554 ns

Table 70 • LVCMOS 1.5 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 5.122 6.026 4.31 5.07 5.145 6.052 5.258 6.186 4.672 5.496 ns

Medium 4.58 5.389 3.86 4.54 4.6 5.411 4.977 5.855 4.357 5.126 ns

Medium

fast

4.323 5.086 3.629 4.269 4.341 5.107 4.804 5.652 4.228 4.974 ns

Fast 4.296 5.054 3.609 4.245 4.314 5.075 4.791 5.636 4.219 4.963 ns

4 mA Slow 4.449 5.235 3.707 4.361 4.443 5.227 6.058 7.127 5.458 6.421 ns

Medium 3.961 4.66 3.264 3.839 3.954 4.651 5.778 6.797 5.116 6.018 ns

Medium

fast

3.729 4.387 3.043 3.579 3.72 4.376 5.63 6.624 4.981 5.86 ns

Fast 3.704 4.358 3.027 3.56 3.695 4.347 5.624 6.617 4.973 5.851 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 36

6 mA Slow 4.244 4.993 3.465 4.076 4.233 4.979 6.39 7.518 5.736 6.748 ns

Medium 3.774 4.44 3.05 3.587 3.762 4.426 6.114 7.193 5.397 6.35 ns

Medium

fast

3.544 4.17 2.839 3.339 3.529 4.152 5.978 7.033 5.27 6.2 ns

Fast 3.519 4.14 2.82 3.317 3.504 4.122 5.965 7.017 5.259 6.187 ns

8 mA Slow 4.099 4.823 3.311 3.894 4.087 4.807 6.584 7.746 5.854 6.888 ns

Medium 3.656 4.301 2.927 3.443 3.642 4.284 6.311 7.425 5.553 6.533 ns

Medium

fast

3.437 4.044 2.731 3.213 3.42 4.023 6.182 7.273 5.435 6.394 ns

Fast 3.41 4.012 2.715 3.193 3.393 3.991 6.178 7.269 5.425 6.383 ns

10 mA Slow 4.029 4.74 3.238 3.809 4.015 4.723 6.732 7.921 5.965 7.018 ns

Medium 3.601 4.237 2.867 3.372 3.586 4.218 6.473 7.615 5.669 6.669 ns

Medium

fast

3.384 3.981 2.672 3.143 3.365 3.958 6.351 7.471 5.55 6.529 ns

Fast 3.357 3.949 2.655 3.123 3.338 3.927 6.345 7.464 5.54 6.518 ns

12 mA Slow 3.974 4.675 3.196 3.759 3.958 4.656 6.842 8.049 6.068 7.139 ns

Medium 3.55 4.176 2.827 3.326 3.534 4.157 6.584 7.746 5.751 6.766 ns

Medium

fast

3.345 3.935 2.638 3.103 3.325 3.911 6.488 7.633 5.641 6.637 ns

Fast 3.316 3.902 2.621 3.083 3.297 3.878 6.486 7.63 5.626 6.619 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

Table 71 • LVCMOS 1.5 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 4.423 5.203 5.397 6.35 5.686 6.69 5.609 6.599 5.561 6.542 ns

4 mA Slow 4.05 4.765 4.503 5.298 4.92 5.788 7.358 8.657 6.525 7.677 ns

6 mA Slow 4.081 4.801 4.259 5.012 4.699 5.528 7.659 9.011 6.709 7.893 ns

8 mA Slow 4.234 4.98 4.068 4.786 4.521 5.319 8.218 9.668 7.05 8.294 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

Table 70 • LVCMOS 1.5 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 37

2.3.5.10 1.2 V LVCMOS

LVCMOS 1.2 is a general standard for 1.2 V applications and is supported in IGLOO2 FPGAs and

SmartFusion2 SoC FPGAs in compliance to the JEDEC specification JESD8-12A.

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 72 • LVCMOS 1.5 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 2.735 3.218 3.371 3.966 3.618 4.257 6.03 7.095 5.705 6.712 ns

4 mA Slow 2.426 2.854 2.992 3.521 3.221 3.79 6.738 7.927 6.298 7.41 ns

6 mA Slow 2.433 2.862 2.81 3.306 3.031 3.566 7.123 8.38 6.596 7.76 ns

Table 73 • LVCMOS 1.2 V DC Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 1.140 1.2 1.26 V

Table 74 • LVCMOS 1.2 V DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high (for

MSIOD and DDRIO I/O

banks)

VIH (DC) 0.65 × VDDI 1.26 V

DC input logic high (for

MSIO I/O bank)

VIH (DC) 0.65 × VDDI 3.45 V

DC input logic low VIL (DC) –0.3 0.35 × VDDI V

Input current high1

1. See Table 24, page 23.

IIH (DC)

Input current low1IIL (DC)

Table 75 • LVCMOS 1.2 V DC Output Voltage Specification

Parameter Symbol Min Max Unit

DC output logic high VOH VDDI × 0.75 V

DC output logic low VOL VDDI × 0.25 V

Table 76 • LVCMOS 1.2 V Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for DDRIO I/O bank) DMAX 200 Mbps AC loading: 17 pF load, maximum drive/slew

Maximum data rate (for MSIO I/O bank) DMAX 120 Mbps AC loading: 17 pF load, maximum drive/slew

Maximum data rate (for MSIOD I/O bank) DMAX 160 Mbps AC loading: 17 pF load, maximum drive/slew

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 38

Note: For a detailed I/V curve, use the corresponding IBIS models:

www.microsemi.com/soc/download/ibis/default.aspx.

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 1.14 V

Table 77 • LVCMOS 1.2 V AC Calibrated Impedance Option

Parameter Symbol Typ Unit

Supported output driver calibrated

impedance (for DDRIO I/O bank)

RODT_CAL 75, 60, 50, 40 

Table 78 • LVCMOS 1.2 V AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point VTRIP 0.6 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5pF

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 79 • LVCMOS 1.2 V Transmitter Drive Strength Specifications

Output Drive Selection VOH (V) VOL (V) IOH (at VOH)

IOL (at VOL)

mAMSIO I/O Bank MSIOD I/O Bank DDRIO I/O Bank Min Max

2 mA 2 mA 2 mA VDDI × 0.75 VDDI × 0.25 2 2

4 mA 4 mA 4 mA VDDI × 0.75 VDDI × 0.25 4 4

6 mA VDDI × 0.75 VDDI × 0.25 6 6

Table 80 • LVCMOS 1.2 V Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input

Buffers)

On-Die Termination (ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 2.448 2.88 2.466 2.901 ns

Table 81 • LVCMOS 1.2 V Receiver Characteristics for MSIO I/O Bank (Input Buffers)

On-Die Termination ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 4.714 5.545 4.675 5.5 ns

50 6.668 7.845 6.579 7.74 ns

75 5.832 6.862 5.76 6.777 ns

150 5.162 6.073 5.111 6.014 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 39

Table 82 • LVCMOS 1.2 V Receiver Characteristics for MSIOD I/O Bank (Input Buffers)

On-Die Termination (ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 4.154 4.887 4.114 4.84 ns

50 6.918 8.139 6.806 8.008 ns

75 5.613 6.603 5.533 6.509 ns

150 4.716 5.549 4.657 5.479 ns

Table 83 • LVCMOS 1.2 V Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 6.713 7.897 5.362 6.308 6.723 7.909 7.233 8.51 6.375 7.499 ns

Medium 5.912 6.955 4.616 5.43 5.915 6.959 6.887 8.102 6.009 7.069 ns

Medium

fast

5.5 6.469 4.231 4.978 5.5 6.471 6.672 7.849 5.835 6.865 ns

Fast 5.462 6.426 4.194 4.935 5.463 6.427 6.646 7.819 5.828 6.857 ns

4 mA Slow 6.109 7.186 4.708 5.539 6.098 7.174 8.005 9.418 7.033 8.274 ns

Medium 5.355 6.299 4.034 4.746 5.338 6.28 7.637 8.985 6.672 7.849 ns

Medium

fast

4.953 5.826 3.685 4.336 4.932 5.802 7.44 8.752 6.499 7.646 ns

Fast 4.911 5.777 3.658 4.303 4.89 5.754 7.427 8.737 6.488 7.632 ns

6 mA Slow 5.89 6.929 4.506 5.301 5.874 6.911 8.337 9.808 7.315 8.605 ns

Medium 5.176 6.089 3.862 4.543 5.155 6.065 7.986 9.394 6.943 8.168 ns

Medium

fast

4.792 5.637 3.523 4.145 4.765 5.606 7.808 9.186 6.775 7.97 ns

Fast 4.754 5.593 3.486 4.101 4.728 5.563 7.777 9.149 6.769 7.963 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

Table 84 • LVCMOS 1.2 V Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 6.746 7.937 7.458 8.774 8.172 9.614 9.867 11.608 8.393 9.874 ns

4 mA Slow 7.068 8.315 6.678 7.857 7.474 8.793 10.986 12.924 9.043 10.638 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 40

2.3.5.11 3.3 V PCI/PCIX

Peripheral Component Interface (PCI) for 3.3 V standards specify support for 33 MHz and 66 MHz PCI

bus applications.

Minimum and Maximum DC/AC Input and Output Levels Specification (Applicable to MSIO Bank

Only)

Table 85 • LVCMOS 1.2 V Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers)

Output

Drive

Selection

Slew

Control

TDP TZL TZH THZ1

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management.

TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA Slow 3.883 4.568 4.868 5.726 5.329 6.269 7.994 9.404 7.527 8.855 ns

4 mA Slow 3.774 4.44 4.188 4.926 4.613 5.426 8.972 10.555 8.315 9.782 ns

Table 86 • PCI/PCI-X DC Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 3.15 3.3 3.45 V

Table 87 • PCI/PCI-X DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input voltage VI03.45V

Input current high1

1. See Table 24, page 23.

IIH(DC)

Input current low1IIL(DC)

Table 88 • PCI/PCI-X DC Output Voltage Specification

Parameter Symbol Min Typ Max Unit

DC output logic high VOH Per PCI specification V

DC output logic low VOL Per PCI specification V

Table 89 • PCI/PCI-X Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (MSIO I/O bank) DMAX 630 Mbps AC Loading: per JEDEC specifications

Table 90 • PCI/PCI-X AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path (falling edge) VTRIP 0.615 × VDDI V

Measuring/trip point for data path (rising edge) VTRIP 0.285 × VDDI V

Resistance for data test path RTT_TEST 25 

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 41

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 3.0 V

2.3.6 Memory Interface and Voltage Referenced I/O Standards

This section describes High-Speed Transceiver Logic (HSTL) memory interface and voltage reference

I/O standards.

2.3.6.1 High-Speed Transceiver Logic (HSTL)

The HSTL standard is a general purpose high-speed bus standard sponsored by IBM (EIA/JESD8-6).

IGLOO2 FPGA and SmartFusion2 SoC FPGA devices support two classes of the 1.5 V HSTL. These

differential versions of the standard require a differential amplifier input buffer and a push-pull output

buffer.

Minimum and Maximum DC/AC Input and Output Levels Specification (Applicable to DDRIO Bank

Only)

Capacitive loading for data path (TDP)C

LOAD 10 pF

Table 91 • PCI/PCIX AC Switching Characteristics for Receiver for MSIO I/O Bank

(Input Buffers)

On-Die Termination (ODT)

TPY TPYS

Unit–1 –Std –1 –Std

None 2.229 2.623 2.238 2.633 ns

Table 92 • PCI/PCIX AC switching Characteristics for Transmitter for MSIO I/O Bank (Output

and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2.146 2.525 2.043 2.404 2.084 2.452 6.095 7.171 5.558 6.539 ns

Table 93 • HSTL Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 1.425 1.5 1.575 V

Termination voltage VTT 0.698 0.750 0.803 V

Input reference voltage VREF 0.698 0.750 0.803 V

Table 94 • HSTL DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high VIH (DC) VREF + 0.1 1.575 V

DC input logic low VIL (DC) –0.3 VREF – 0.1 V

Input current high1

1. See Table 24, page 23.

IIH (DC)

Input current low1IIL (DC)

Table 90 • PCI/PCI-X AC Test Parameter Specifications

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 42

Table 95 • HSTL DC Output Voltage Specification Applicable to DDRIO I/O Bank Only

Parameter Symbol Min Max Unit

HSTL Class I

DC output logic high VOH VDDI – 0.4 V

DC output logic low VOL 0.4 V

Output minimum source DC current (MSIO and DDRIO I/O banks) IOH at VOH –8.0 mA

Output minimum sink current (MSIO and DDRIO I/O banks) IOL at VOL 8.0 mA

HSTL Class II

DC output logic high VOH VDDI – 0.4 V

DC output logic low VOL 0.4 V

Output minimum source DC current IOH at VOH –16.0 mA

Output minimum sink current IOL at VOL 16.0 mA

Table 96 • HSTL DC Differential Voltage Specification

Parameter Symbol Min Unit

DC input differential voltage VID (DC) 0.2 V

Table 97 • HSTL AC Differential Voltage Specifications

Parameter Symbol Min Max Unit

AC input differential voltage VDIFF 0.4 V

AC differential cross point voltage Vx0.68 0.9 V

Table 98 • HSTL Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate DMAX 400 Mbps AC loading: per JEDEC specifications

Table 99 • HSTL Impedance Specification

Parameter Symbol Typ Unit Conditions

Supported output driver calibrated

impedance (for DDRIO I/O bank)

RREF 25.5, 47.8 Reference resistance = 191 

Effective impedance value (ODT for

DDRIO I/O bank only)

RTT 47.8 Reference resistance = 191 

Table 100 • HSTL AC Test Parameter Specification

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 0.75 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5pF

Reference resistance for data test path for HSTL15 Class I (TDP)RTT_TEST 50 

Reference resistance for data test path for HSTL15 Class II (TDP)RTT_TEST 25 

Capacitive loading for data path (TDP)C

LOAD 5pF

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 43

AC Switching Characteristics

Worst-case commercial conditions: TJ = 85 °C, VDD = 1.14 V, worst-case VDDI.

2.3.6.2 Stub-Series Terminated Logic

Stub-Series Terminated Logic (SSTL) for 2.5 V (SSTL2), 1.8 V (SSTL18), and 1.5 V (SSTL15) is

supported in IGLOO2 and SmartFusion2 SoC FPGAs. SSTL2 is defined by JEDEC standard JESD8-9B

and SSTL18 is defined by JEDEC standard JESD8-15. IGLOO2 SSTL I/O configurations are designed to

meet double data rate standards DDR/2/3 for general purpose memory buses. Double data rate

standards are designed to meet their JEDEC specifications as defined by JEDEC standard JESD79F for

DDR, JEDEC standard JESD79-2F for DDR, JEDEC standard JESD79-3D for DDR3, and JEDEC

standard JESD209A for LPDDR.

Table 101 • HSTL Receiver Characteristics for DDRIO I/O Bank with Fixed Code (Input Buffers)

On-Die Termination (ODT)

TPY

Unit –1 –Std

Pseudo differential None 1.605 1.888 ns

47.8 1.614 1.898 ns

True differential None 1.622 1.909 ns

47.8 1.628 1.916 ns

Table 102 • HSTL Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

HSTL Class I

Single-ended 2.6 3.059 2.514 2.958 2.514 2.958 2.431 2.86 2.431 2.86 ns

Differential 2.621 3.083 2.648 3.115 2.647 3.113 2.925 3.442 2.923 3.44 ns

HSTL Class II

Single-ended 2.511 2.954 2.488 2.927 2.49 2.93 2.409 2.833 2.411 2.836 ns

Differential 2.528 2.974 2.552 3.003 2.551 3.001 2.897 3.409 2.896 3.408 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 44

2.3.6.3 Stub-Series Terminated Logic 2.5 V (SSTL2)

SSTL2 Class I and Class II are supported in IGLOO2 and SmartFusion2 SoC FPGAs and also comply

with reduced and full drive of double data rate (DDR) standards. IGLOO2 and SmartFusion2 SoC FPGA

I/Os supports both standards for single-ended signaling and differential signaling for SSTL2. This

standard requires a differential amplifier input buffer and a push-pull output buffer.

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 103 • DDR1/SSTL2 DC Recommended Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 2.375 2.5 2.625 V

Termination voltage VTT 1.164 1.250 1.339 V

Input reference voltage VREF 1.164 1.250 1.339 V

Table 104 • DDR1/SSTL2 DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high VIH (DC) VREF + 0.15 2.625 V

DC input logic low VIL (DC) –0.3 VREF – 0.15 V

Input current high1

1. See Ta bl e 24 , page 23.

IIH (DC)

Input current low1IIL (DC)

Table 105 • DDR1/SSTL2 DC Output Voltage Specification

Parameter Symbol Min Max Unit

SSTL2 Class I (DDR Reduced Drive)

DC output logic high VOH VTT + 0.608 V

DC output logic low VOL VTT – 0.608 V

Output minimum source DC current IOH at VOH 8.1 mA

Output minimum sink current IOL at VOL –8.1 mA

SSTL2 Class II (DDR Full Drive) – Applicable to MSIO and DDRIO I/O Bank Only

DC output logic high VOH VTT + 0.81 V

DC output logic low VOL VTT – 0.81 V

Output minimum source DC current IOH at VOH 16.2 mA

Output minimum sink current IOL at VOL –16.2 mA

Table 106 • DDR1/SSTL2 DC Differential Voltage Specification

Parameter Symbol Min Unit

DC input differential voltage VID (DC) 0.3 V

Table 107 • SSTL2 AC Differential Voltage Specifications

Parameter Symbol Min Max Unit

AC input differential voltage VDIFF (AC) 0.7 V

AC differential cross point voltage Vx (AC) 0.5 × VDDI – 0.2 0.5 × VDDI + 0.2 V

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 45

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V

Table 108 • SSTL2 Minimum and Maximum AC Switching Speeds

Parameter Symbol Max Unit Conditions

Maximum data rate (for

DDRIO I/O bank)

DMAX 400 Mbps AC loading: per JEDEC

specifications

Maximum data rate (for

MSIO I/O bank)

DMAX 575 Mbps AC loading: 17pF load

Maximum data rate (for

MSIOD I/O bank)

DMAX 700 Mbps AC loading: 3 pF / 50 

load

510 Mbps AC loading: 17pF load

Table 109 • SSTL2 AC Impedance Specifications

Parameter Typ Unit Conditions

Supported output driver calibrated

impedance (for DDRIO I/O bank)

20, 42 Reference resistor = 150 

Table 110 • DDR1/SSTL2 AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 1.25 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

Reference resistance for data test path for SSTL2 Class I

(TDP)

RTT_TEST 50 

Reference resistance for data test path for SSTL2 Class II

(TDP)

RTT_TEST 25 

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 111 • SSTL2 Receiver Characteristics for DDRIO I/O Bank (Input Buffers)

On-Die

Termination (ODT)

TPY

Unit–1 –Std

Pseudo differential None 1.549 1.821 ns

True differential None 1.589 1.87 ns

Table 112 • SSTL2 Receiver Characteristics for MSIO I/O Bank (Input Buffers)

On-Die

Termination (ODT)

TPY

Unit–1 –Std

Pseudo differential None 2.798 3.293 ns

True differential None 2.733 3.215 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 46

2.3.6.4 Stub-Series Terminated Logic 1.8 V (SSTL18)

SSTL18 Class I and Class II are supported in IGLOO2 and SmartFusion2 SoC FPGAs, and also comply

with the reduced and full drive double date rate (DDR2) standard. IGLOO2 and SmartFusion2 SoC

FPGA I/Os support both standards for single-ended signaling and differential signaling for SSTL18. This

standard requires a differential amplifier input buffer and a push-pull output buffer.

Table 113 • DDR1/SSTL2 Receiver Characteristics for MSIOD I/O Bank (Input Buffers)

On-Die

Termination (ODT)

TPY

Unit–1 –Std

Pseudo differential None 2.476 2.913 ns

True differential None 2.475 2.911 ns

Table 114 • SSTL2 Class I Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

Single-ended 2.26 2.66 1.99 2.341 1.985 2.335 2.135 2.512 2.13 2.505 ns

Differential 2.26 2.658 2.202 2.591 2.201 2.589 2.393 2.815 2.392 2.814 ns

Table 115 • DDR1/SSTL2 Class I Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

Single-ended 2.055 2.417 2.037 2.396 2.03 2.388 2.068 2.433 2.061 2.425 ns

Differential 2.192 2.58 2.434 2.864 2.425 2.852 2.164 2.545 2.156 2.536 ns

Table 116 • DDR1/SSTL2 Class I Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate

Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

Single-ended 1.512 1.779 1.462 1.72 1.462 1.72 1.676 1.972 1.676 1.971 ns

Differential 1.676 1.971 1.774 2.087 1.766 2.077 1.854 2.181 1.845 2.171 ns

Table 117 • DDR1/SSTL2 Class II Transmitter Characteristics for DDRIO I/O Bank (Output and Tristate

Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

Single-ended 2.122 2.497 1.906 2.243 1.902 2.237 2.061 2.424 2.056 2.418 ns

Differential 2.127 2.501 2.042 2.402 2.043 2.403 2.363 2.78 2.365 2.781 ns

Table 118 • DDR1/SSTL2 Class II Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

Single-ended 2.29 2.693 1.988 2.338 1.978 2.326 1.989 2.34 1.979 2.328 ns

Differential 2.418 2.846 2.304 2.711 2.297 2.702 2.131 2.506 2.124 2.499 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 47

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 119 • SSTL18 DC Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 1.71 1.8 1.89 V

Termination voltage VTT 0.838 0.900 0.964 V

Input reference voltage VREF 0.838 0.900 0.964 V

Table 120 • SSTL18 DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high VIH (DC) VREF + 0.125 1.89 V

DC input logic low VIL (DC) –0.3 VREF – 0.125 V

Input current high1

1. See Table 24, page 23.

IIH (DC)

Input current low1IIL (DC)

Table 121 • SSTL18 DC Output Voltage Specification

Parameter Symbol Min Max Unit

SSTL18 Class I (DDR2 Reduced Drive)

DC output logic high VOH VTT + 0.603 V

DC output logic low VOL VTT– 0.603 V

Output minimum source DC current (DDRIO I/O bank

only)

IOH at VOH 6.5 mA

Output minimum sink current (DDRIO I/O bank only) IOL at VOL –6.5 mA

SSTL18 Class II (DDR2 Full Drive)1

1. To meet JEDEC Electrical Compliance, use DDR2 Full Drive Transmitter.

DC output logic high VOH VTT + 0.603 V

DC output logic low VOL VTT– 0.603 V

Output minimum source DC current (DDRIO I/O bank

only)

IOH at VOH 13.4 mA

Output minimum sink current (DDRIO I/O bank only) IOL at VOL –13.4 mA

Table 122 • SSTL18 DC Differential Voltage Specification

Parameter Symbol Min Unit

DC input differential voltage VID (DC) 0.3 V

Table 123 • SSTL18 AC Differential Voltage Specifications (Applicable to DDRIO Bank Only)

Parameter Symbol Min Max Unit

AC input differential

voltage

VDIFF (AC) 0.5 V

AC differential cross

point voltage

Vx (AC) 0.5 × VDDI – 0.175 0.5 × VDDI + 0.175 V

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 48

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 1.71 V

Table 124 • SSTL18 Minimum and Maximum AC Switching Speed (Applicable to DDRIO Bank Only)

Parameter Symbol Max Unit Conditions

Maximum data rate (for DDRIO I/O bank) DMAX 667 Mbps AC loading: per JEDEC specification

Table 125 • SSTL18 AC Impedance Specifications (Applicable to DDRIO Bank Only)

Parameter Symbol Typ Unit Conditions

Supported output driver calibrated impedance

(for DDRIO I/O bank)

RREF 20, 42 Reference resistor = 150 

Effective impedance value (ODT) RTT 50, 75, 150 Reference resistor = 150 

Table 126 • SSTL18 AC Test Parameter Specifications (Applicable to DDRIO Bank Only)

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 0.9 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

Reference resistance for data test path for SSTL18 Class I (TDP) RTT_TEST 50 

Reference resistance for data test path for SSTL18 Class II (TDP) RTT_TEST 25 

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 127 • DDR2/SSTL18 Receiver Characteristics for DDRIO I/O Bank with Fixed Code

On-Die Termination (ODT)

TPY

Unit–1 –Std

Pseudo differential None 1.567 1.844 ns

True differential None 1.588 1.869 ns

Table 128 • DDR2/SSTL18 Transmitter Characteristics (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

SSTL18 Class I (for DDRIO I/O Bank)

Single-ended 2.383 2.804 2.23 2.623 2.229 2.622 2.202 2.591 2.201 2.59 ns

Differential 2.413 2.84 2.797 3.29 2.797 3.29 2.282 2.685 2.282 2.685 ns

SSTL18 Class II (for DDRIO I/O Bank)

Single-ended 2.281 2.683 2.196 2.584 2.195 2.583 2.171 2.555 2.17 2.554 ns

Differential 2.315 2.724 2.698 3.173 2.698 3.173 2.242 2.639 2.242 2.639 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 49

2.3.6.5 Stub-Series Terminated Logic 1.5 V (SSTL15)

SSTL15 Class I and Class II are supported in IGLOO2 FPGAs and SmartFusion2 SoC FPGAs, and also

comply with the reduced and full drive double data rate (DDR3) standard. IGLOO2 FPGA and

SmartFusion2 SoC FPGA I/Os supports both standards for single-ended signaling and differential

signaling for SSTL18. This standard requires a differential amplifier input buffer and a push-pull output

buffer.

Minimum and Maximum DC/AC Input and Output Levels Specification

The following table lists the SSTL15 DC voltage specifications for DDRIO bank.

Note: To meet JEDEC electrical compliance, use DDR3 full drive transmitter.

Table 129 • SSTL15 DC Recommended DC Operating Conditions (for DDRIO I/O Bank Only)

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 1.425 1.5 1.575 V

Termination voltage VTT 0.698 0.750 0.803 V

Input reference voltage VREF 0.698 0.750 0.803 V

Table 130 • SSTL15 DC Input Voltage Specification (for DDRIO I/O Bank Only)

Parameter Symbol Min Max Unit

DC input logic high VIH(DC) VREF + 0.1 1.575 V

DC input logic low VIL(DC) –0.3 VREF – 0.1 V

Input current high1

1. See Table 24, page 23.

IIH (DC)

Input current low1IIL (DC)

Table 131 • SSTL15 DC Output Voltage Specification (for DDRIO I/O Bank Only)

Parameter Symbol Min Max Unit

DDR3/SSTL15 Class I (DDR3 Reduced Drive)

DC output logic high VOH 0.8 × VDDI V

DC output logic low VOL 0.2 × VDDI V

Output minimum source DC

current

IOH at VOH 6.5 mA

Output minimum sink current IOL at VOL –6.5 mA

DDR3/SSTL15 Class II (DDR3 Full Drive)

DC output logic high VOH 0.8 × VDDI V

DC output logic low VOL 0.2 × VDDI V

Output minimum source DC

current

IOH at VOH 7.6 mA

Output minimum sink current IOL at VOL –7.6 mA

Table 132 • SSTL15 DC Differential Voltage Specification (for DDRIO I/O Bank Only)

Parameter Symbol Min Unit

DC input differential voltage VID 0.2 V

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 50

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 1.425 V

Table 133 • SSTL15 AC SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only)

Parameter Symbol Min Max Unit

AC input differential voltage VDIFF (AC) 0.3 V

AC differential cross point voltage Vx (AC) 0.5 × VDDI – 0.150 0.5 × VDDI + 0.150 V

Table 134 • SSTL15 Minimum and Maximum AC Switching Speed (for DDRIO I/O Bank Only)

Parameter Symbol Max Unit Conditions

Maximum data rate DMAX 667 Mbps AC loading: per JEDEC specifications

Table 135 • SSTL15 AC Calibrated Impedance Option (for DDRIO I/O Bank Only)

Parameter Symbol Typ Unit Conditions

Supported output driver calibrated impedance RREF 34, 40 Reference resistor = 240 

Effective impedance value (ODT) RTT 20, 30, 40, 60, 120 Reference resistor = 240 

Table 136 • SSTL15 AC Test Parameter Specifications (for DDRIO I/O Bank Only)

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 0.75 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

Reference resistance for data test path for SSTL15 Class I (TDP) RTT_TEST 50 

Reference resistance for data test path for SSTL15 Class II (TDP) RTT_TEST 25 

Capacitive loading for data path (TDP)C

LOAD 5pF

Table 137 • DDR3/SSTL15 Receiver Characteristics for DDRIO I/O Bank – with Calibration Only

On-Die Termination (ODT)

TPY

Unit –1 –Std

Pseudo differential None 1.605 1.888 ns

20 1.616 1.901 ns

30 1.613 1.897 ns

40 1.611 1.895 ns

60 1.609 1.893 ns

120 1.607 1.89 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 51

2.3.6.6 Low Power Double Data Rate (LPDDR)

LPDDR reduced and full drive low power double data rate standards are supported in IGLOO2 FPGA

and SmartFusion2 SoC FPGA I/Os. This standard requires a differential amplifier input buffer and a

push-pull output buffer.

Minimum and Maximum DC/AC Input and Output Levels Specification

True differential None 1.623 1.91 ns

20 1.637 1.926 ns

30 1.63 1.918 ns

40 1.626 1.914 ns

60 1.622 1.91 ns

120 1.619 1.905 ns

Table 138 • DDR3/SSTL15 Transmitter Characteristics (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1–Std –1–Std–1–Std–1–Std–1–Std

DDR3 Reduced Drive/SSTL15 Class I (for DDRIO I/O Bank)

Single-ended 2.533 2.98 2.522 2.967 2.523 2.968 2.427 2.855 2.428 2.856 ns

Differential 2.555 3.005 3.073 3.615 3.073 3.615 2.416 2.843 2.416 2.843 ns

DDR3 Full Drive/SSTL15 Class II (for DDRIO I/O Bank)

Single-ended 2.53 2.977 2.514 2.958 2.516 2.96 2.422 2.849 2.425 2.852 ns

Differential 2.552 3.002 2.591 3.048 2.59 3.047 2.882 3.391 2.881 3.39 ns

Table 139 • LPDDR DC Recommended DC Operating Conditions

Parameter Symbol Min Typ Max

Supply voltage VDDI 1.71 1.8 1.89

Termination voltage VTT 0.838 0.900 0.964

Input reference voltage VREF 0.838 0.900 0.964

Table 140 • LPDDR DC Input Voltage Specification

Parameter Symbol Min Max

DC input logic high VIH (DC) 0.7 × VDDI 1.89

DC input logic low VIL (DC) –0.3 0.3 × VDDI

Input current high1

1. See Table 24, page 23.

IIH (DC)

Input current low1IIL (DC)

Table 137 • DDR3/SSTL15 Receiver Characteristics for DDRIO I/O Bank – with Calibration Only

On-Die Termination (ODT)

TPY

Unit –1 –Std

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 52

Table 141 • LPDDR DC Output Voltage Specification Reduced Drive

Parameter Symbol Min Max

DC output logic high VOH 0.9 × VDDI

DC output logic low VOL 0.1 × VDDI

Output minimum source DC

current

IOH at VOH 0.1

Output minimum sink current IOL at VOL –0.1

Table 142 • LPDDR DC Output Voltage Specification Full Drive1

Parameter Symbol Min Max

DC output logic high VOH 0.9 × VDDI

DC output logic low VOL 0.1 × VDDI

Output minimum source DC current IOH at VOH 0.1

Output minimum sink current IOL at VOL –0.1

1. To meet JEDEC Electrical Compliance, use LPDDR Full Drive Transmitter.

Table 143 • LPDDR DC Differential Voltage Specification

Parameter Symbol Min

DC input differential voltage VID (DC) 0.4 × VDDI

Table 144 • LPDDR AC Differential Voltage Specifications (for DDRIO I/O Bank Only)

Parameter Symbol Min Max Unit

AC input differential voltage VDIFF 0.6 × VDDI V

AC differential cross point voltage Vx0.4 × VDDI 0.6 × VDDI V

Table 145 • LPDDR AC Specifications (for DDRIO I/O Bank Only)

Parameter Symbol Max Unit Conditions

Maximum data rate DMAX 400 Mbps AC loading: per JEDEC specifications

Table 146 • LPDDR AC Calibrated Impedance Option (for DDRIO I/O Bank Only)

Parameter Symbol Typ Unit Conditions

Supported output driver calibrated impedance RREF 20, 42 Reference resistor = 150 

Effective impedance value (ODT) RTT 50, 70, 150 Reference resistor = 150 

Table 147 • LPDDR AC Test Parameter Specifications (for DDRIO I/O Bank Only)

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 0.9 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

Reference resistance for data test path for LPDDR (TDP) RTT_TEST 50 

Capacitive loading for data path (TDP)C

LOAD 5

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 53

AC Switching Characteristics

Worst-case commercial conditions: TJ = 85 °C, VDD = 1.14 V, worst-case VDDI.

Minimum and Maximum DC/AC Input and Output Levels Specification using LPDDR-LVCMOS

1.8 V Mode

Table 148 • LPDDR Receiver Characteristics for DDRIO I/O Bank with Fixed Codes

On-Die Termination (ODT)

TPY

Unit–1 –Std

Pseudo differential None 1.568 1.845 ns

True differential None 1.588 1.869 ns

Table 149 • LPDDR Reduced Drive for DDRIO I/O Bank (Output and Tristate Buffers)

TDP TENZL TENZH TENHZ TENLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

Single-ended 2.383 2.804 2.23 2.623 2.229 2.622 2.202 2.591 2.201 2.59 ns

Differential 2.396 2.819 2.764 3.252 2.764 3.252 2.255 2.653 2.255 2.653 ns

Table 150 • LPDDR Full Drive for DDRIO I/O Bank (Output and Tristate Buffers)

TDP TENZL TENZH TENHZ TENLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

Single-ended 2.281 2.683 2.196 2.584 2.195 2.583 2.171 2.555 2.17 2.554 ns

Differential 2.298 2.703 2.288 2.692 2.288 2.692 2.593 3.051 2.593 3.051 ns

Table 151 • LPDDR-LVCMOS 1.8 V Mode Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 1.710 1.8 1.89 V

Table 152 • LPDDR-LVCMOS 1.8 V Mode DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input logic high (for MSIOD and DDRIO

I/O banks)

VIH (DC) 0.65 × VDDI 1.89 V

DC input logic high (for MSIO I/O bank) VIH (DC) 0.65 × VDDI 3.45 V

DC input logic low VIL (DC) –0.3 0.35 × VDDI V

Input current high1

1. See Table 24, page 23.

IIH (DC)

Input current low1IIL (DC)

Table 153 • LPDDR-LVCMOS 1.8 V Mode DC Output Voltage Specification

Parameter Symbol Min Max Unit

DC output logic high VOH VDDI – 0.45 V

DC output logic low VOL 0.45 V

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 54

Table 154 • LPDDR-LVCMOS 1.8 V Minimum and Maximum AC Switching Speeds

Parameter Symbol Max Unit Conditions

Maximum data rate (for DDRIO I/O bank) DMAX 400 Mbps AC loading: 17pf load, 8 ma

drive and above/all slew

Table 155 • LPDDR-LVCMOS 1.8 V Calibrated Impedance Option

Parameter Symbol Typ Unit

Supported output driver calibrated

impedance (for DDRIO I/O bank)

RODT_CAL 75, 60, 50, 33, 25, 20 

Table 156 • LPDDR-LVCMOS 1.8 V AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP 0.9 V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5pF

Capacitive loading for data path (TDP) CLOAD 5pF

Table 157 • LPDDR-LVCMOS 1.8 V Mode Transmitter Drive Strength Specification for DDRIO Bank

Output Drive Selection

VOH (V)

Min

VOL (V)

Max IOH (at VOH) mA IOL (at VOL) mA

2 mA VDDI – 0.45 0.45 2 2

4 mA VDDI – 0.45 0.45 4 4

6 mA VDDI – 0.45 0.45 6 6

8 mA VDDI – 0.45 0.45 8 8

10 mA VDDI – 0.45 0.45 10 10

12 mA VDDI – 0.45 0.45 12 12

16 mA1VDDI – 0.45 0.45 16 16

1. 16 mA Drive Strengths, All Slews, meet LPDDR JEDEC electrical compliance.

Table 158 • LPDDR-LVCMOS 1.8V AC Switching Characteristics for Receiver (for DDRIO

I/O Bank with Fixed Code - Input Buffers)

ODT (On Die

Termination) –1 –Std –1 –Std Unit

None 1.968 2.315 2.099 2.47 ns

Table 159 • LPDDR-LVCMOS 1.8 V AC Switching Characteristics for Transmitter for DDRIO I/O Bank (Output

and Tristate Buffers)

Output Drive

Selection

Slew

Control

TDP TZL TZH THZ1TLZ1

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2 mA slow 4.234 4.981 3.646 4.29 4.245 4.995 4.908 5.774 4.434 5.216 ns

medium 3.824 4.498 3.282 3.861 3.834 4.511 4.625 5.441 4.116 4.843 ns

medium_fast 3.627 4.267 3.111 3.66 3.637 4.279 4.481 5.272 3.984 4.687 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 55

2.3.7 Differential I/O Standards

Configuration of the I/O modules as a differential pair is handled by Microsemi SoC Products Group

Libero software when the user instantiates a differential I/O macro in the design. Differential I/Os can also

be used in conjunction with the embedded Input register (InReg), Output register (OutReg), Enable

2.3.7.1 LVDS

Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard.

Minimum and Maximum Input and Output Levels

fast 3.605 4.241 3.097 3.644 3.615 4.253 4.472 5.262 3.973 4.674 ns

4 mA slow 3.923 4.615 3.314 3.9 3.918 4.61 5.403 6.356 4.894 5.757 ns

medium 3.518 4.138 2.961 3.484 3.515 4.135 5.121 6.025 4.561 5.366 ns

medium_fast 3.321 3.907 2.783 3.275 3.317 3.903 4.966 5.843 4.426 5.206 ns

fast 3.301 3.883 2.77 3.259 3.296 3.878 4.957 5.831 4.417 5.196 ns

6 mA slow 3.71 4.364 3.104 3.652 3.702 4.355 5.62 6.612 5.08 5.977 ns

medium 3.333 3.921 2.779 3.27 3.325 3.913 5.346 6.289 4.777 5.62 ns

medium_fast 3.155 3.712 2.62 3.083 3.146 3.702 5.21 6.13 4.657 5.479 ns

fast 3.134 3.688 2.608 3.068 3.125 3.677 5.202 6.12 4.648 5.468 ns

8 mA slow 3.619 4.258 3.007 3.538 3.607 4.244 5.815 6.841 5.249 6.175 ns

medium 3.246 3.819 2.686 3.16 3.236 3.807 5.542 6.52 4.936 5.807 ns

medium_fast 3.066 3.607 2.525 2.971 3.054 3.593 5.405 6.359 4.811 5.66 ns

fast 3.046 3.584 2.513 2.957 3.034 3.57 5.401 6.353 4.803 5.651 ns

10 mA slow 3.498 4.115 2.878 3.386 3.481 4.096 6.046 7.113 5.444 6.404 ns

medium 3.138 3.692 2.569 3.023 3.126 3.678 5.782 6.803 5.129 6.034 ns

medium_fast 2.966 3.489 2.414 2.841 2.951 3.472 5.666 6.665 5.013 5.897 ns

fast 2.945 3.464 2.401 2.826 2.93 3.448 5.659 6.658 5.003 5.886 ns

12 mA slow 3.417 4.02 2.807 3.303 3.401 4.002 6.083 7.156 5.464 6.428 ns

medium 3.076 3.618 2.519 2.964 3.063 3.604 5.828 6.856 5.176 6.089 ns

medium_fast 2.913 3.427 2.376 2.795 2.898 3.41 5.725 6.736 5.072 5.966 ns

fast 2.894 3.405 2.362 2.78 2.879 3.388 5.715 6.724 5.064 5.957 ns

16 mA slow 3.366 3.96 2.751 3.237 3.348 3.939 6.226 7.324 5.576 6.56 ns

medium 3.03 3.565 2.47 2.906 3.017 3.55 5.981 7.036 5.282 6.214 ns

medium_fast 2.87 3.377 2.328 2.739 2.854 3.358 5.895 6.935 5.18 6.094 ns

fast 2.853 3.357 2.314 2.723 2.837 3.338 5.889 6.929 5.177 6.09 ns

1. Delay increases with drive strength are inherent to built-in slew control circuitry for simultaneous switching output (SSO)

management).

Table 160 • LVDS Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit Conditions

Supply voltage VDDI 2.375 2.5 2.625 V 2.5 V range

Supply voltage VDDI 3.15 3.3 3.45 V 3.3 V range

Table 159 • LPDDR-LVCMOS 1.8 V AC Switching Characteristics for Transmitter for DDRIO I/O Bank (Output

and Tristate Buffers) (continued)

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 56

Table 161 • LVDS DC Input Voltage Specification

Parameter Symbol Min Max Unit Conditions

DC Input voltage VI0 2.925 V 2.5 V range

DC input voltage VI0 3.45 V 3.3 V range

Input current high1IIH (DC)

Input current low1IIL (DC)

1. See Tab le 2 4, page 23.

Table 162 • LVDS DC Output Voltage Specification

Parameter Symbol Min Typ Max Unit

DC output logic high VOH 1.25 1.425 1.6 V

DC output logic low VOL 0.9 1.075 1.25 V

Table 163 • LVDS DC Differential Voltage Specification1

Parameter Symbol Min Typ Max Unit

Differential output voltage swing VOD 250 350 450 mV

Output common mode voltage VOCM 1.125 1.25 1.375 V

Input common mode voltage VICM 0.05 1.25 2.35 V

Input differential voltage VID 100 350 600 mV

1. when VID is < 300 mV, the input signal is delayed by up to an additional 450 ps for

LVDS25 and 280 ps for LVDS33. This delay is not accounted in the timing model. Clock

insertion delays, propagation delays, and I/O to FF delays are marginally affected. Adding

a parallel termination resistor of 200 ohms +/- 5% across the receiver pins can mitigate

this additional delay when VID is < 300 mV.

Table 164 • LVDS Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for MSIO I/O bank) DMAX 535 Mbps AC loading: 12 pF / 100  differential load

Maximum data rate (for MSIOD I/O bank) no

pre-emphasis

DMAX 620 Mbps AC loading: 10 pF / 100  differential load

700 Mbps AC loading: 2 pF / 100  differential load

Table 165 • LVDS AC Impedance Specifications

Parameter Symbol Typ Max Unit

Termination resistance RT 100 

Table 166 • LVDS AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP Cross point V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 57

LVDS25 AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V

LVDS33 AC Switching Characteristics

Table 167 • LVDS25 Receiver Characteristics for MSIO I/O Bank (Input Buffers)

On-Die Termination (ODT)

TPY

Unit –1 –Std

None 2.774 3.263 ns

100 2.775 3.264 ns

Table 168 • LVDS25 Receiver Characteristics for MSIOD I/O Bank (Input Buffers)

On-Die Termination (ODT)

TPY

Unit –1 –Std

None 2.554 3.004 ns

100 2.549 2.999 ns

Table 169 • LVDS25 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2.136 2.513 2.416 2.842 2.402 2.825 2.423 2.85 2.409 2.833 ns

Table 170 • LVDS25 Transmitter Characteristics for MSIOD I/O Bank (Output and Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

No pre-emphasis 1.61 1.893 1.749 2.058 1.735 2.041 1.897 2.231 1.866 2.195 ns

Min pre-emphasis 1.527 1.796 1.757 2.067 1.744 2.052 1.905 2.241 1.876 2.207 ns

Med pre-emphasis 1.496 1.76 1.765 2.077 1.751 2.06 1.914 2.252 1.884 2.216 ns

Table 171 • LVDS33 Receiver Characteristics for MSIO I/O Bank (Input Buffers)

On Die Termination (ODT)

TPY

Unit–1 –Std

None 2.572 3.025 ns

100 2.569 3.023 ns

Table 172 • LVDS33 Transmitter Characteristics for MSIO I/O Bank (Output and Tristate

Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

1.942 2.284 1.98 2.33 1.97 2.318 1.953 2.298 1.96 2.307 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 58

2.3.7.2 B-LVDS

Bus LVDS (B-LVDS) specifications extend the existing LVDS standard to high-performance multipoint

bus applications. Multidrop and multipoint bus configurations may contain any combination of drivers,

receivers, and transceivers.

Minimum and Maximum DC/AC Input and Output Levels Specification

Table 173 • B-LVDS Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 2.375 2.5 2.625 V

Table 174 • B-LVDS DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input voltage VI02.925V

Input current high1

1. See Tab le 2 4, page 23.

IIH (DC)

Input current low1IIL (DC)

Table 175 • B-LVDS DC Output Voltage Specification (for MSIO I/O Bank Only)

Parameter Symbol Min Typ Max Unit

DC output logic high VOH 1.25 1.425 1.6 V

DC output logic low VOL 0.9 1.075 1.25 V

Table 176 • B-LVDS DC Differential Voltage Specification

Parameter Symbol Min Max Unit

Differential output voltage swing (for MSIO I/O bank only) VOD 65 460 mV

Output common mode voltage (for MSIO I/O bank only) VOCM 1.1 1.5 V

Input common mode voltage VICM 0.05 2.4 V

Input differential voltage VID 0.1 VDDI V

Table 177 • B-LVDS Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for MSIO I/O bank) DMAX 500 Mbps AC loading: 2 pF / 100  differential load

Table 178 • B-LVDS AC Impedance Specifications

Parameter Symbol Typ Unit

Termination resistance RT27 

Table 179 • B-LVDS AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP Cross point V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ) CENT 5pF

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 59

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V.

2.3.7.3 M-LVDS

M-LVDS specifications extend the existing LVDS standard to high-performance multipoint bus

applications. Multidrop and multipoint bus configurations may contain any combination of drivers,

receivers, and transceivers.

Minimum and Maximum Input and Output Levels

Table 180 • B-LVDS AC Switching Characteristics for Receiver for MSIO I/O

Bank (Input Buffers)

On-Die Termination (ODT)

TPY

Unit–1 –Std

None 2.738 3.221 ns

100 2.735 3.218 ns

Table 181 • B-LVDS AC Switching Characteristics for Receiver for MSIOD I/O

Bank (Input Buffers)

On-Die Termination (ODT)

TPY

Unit–1 –Std

None 2.495 2.934 ns

100 2.495 2.935 ns

Table 182 • B-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and

Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2.258 2.656 2.343 2.756 2.329 2.74 2.12 2.494 2.123 2.497 ns

Table 183 • M-LVDS Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage1

1. Only M-LVDS TYPE I is supported.

VDDI 2.375 2.5 2.625 V

Table 184 • M-LVDS DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input voltage VI02.925V

Input current high1

1. See Table 24, page 23.

IIH (DC)

Input current low2IIL (DC)

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 60

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V

Table 185 • M-LVDS DC Voltage Specification Output Voltage Specification (for MSIO I/O Bank Only)

Parameter Symbol Min Typ Max Unit

DC output logic high VOH 1.25 1.425 1.6 V

DC output logic low VOL 0.9 1.075 1.25 V

Table 186 • M-LVDS Differential Voltage Specification

Parameter Symbol Min Max Unit

Differential output voltage swing (for MSIO I/O bank only) VOD 300 650 mV

Output common mode voltage (for MSIO I/O bank only) VOCM 0.3 2.1 V

Input common mode voltage VICM 0.3 1.2 V

Input differential voltage VID 50 2400 mV

Table 187 • M-LVDS Minimum and Maximum AC Switching Speed for MSIO I/O Bank

Parameter Symbol Max Unit Conditions

Maximum data rate DMAX 500 Mbps AC loading: 2 pF / 100  differential load

Table 188 • M-LVDS AC Impedance Specifications

Parameter Symbol Typ Unit

Termination resistance RT50 

Table 189 • M-LVDS AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP Cross point V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5 pF

Table 190 • M-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers)

On-Die Termination (ODT)

TPY

Unit –1 –Std

None 2.738 3.221 ns

100 2.735 3.218 ns

Table 191 • M-LVDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers)

On-Die Termination (ODT)

TPY

Unit –1 –Std

None 2.495 2.934 ns

100 2.495 2.935 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 61

2.3.7.4 Mini-LVDS

Mini-LVDS is an unidirectional interface from the timing controller to the column drivers and is designed

to the Texas Instruments Standard SLDA007A.

Mini-LVDS Minimum and Maximum Input and Output Levels

Table 192 • M-LVDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and Tristate

Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2.258 2.656 2.348 2.762 2.334 2.746 2.123 2.497 2.125 2.5 ns

Table 193 • Mini-LVDS Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 2.375 2.5 2.625 V

Table 194 • Mini-LVDS DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC Input voltage VI02.925V

Table 195 • Mini-LVDS DC Output Voltage Specification

Parameter Symbol Min Typ Max Unit

DC output logic high VOH 1.25 1.425 1.6 V

DC output logic low VOL 0.9 1.075 1.25 V

Table 196 • Mini-LVDS DC Differential Voltage Specification

Parameter Symbol Min Max Unit

Differential output voltage swing VOD 300 600 mV

Output common mode voltage VOCM 1 1.4 V

Input common mode voltage VICM 0.3 1.2 V

Input differential voltage VID 100 600 mV

Table 197 • Mini-LVDS Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for MSIO I/O bank) DMAX 520 Mbps AC loading: 2 pF / 100  differential load

Maximum data rate (for MSIOD I/O bank) DMAX 700 Mbps AC loading: 2 pF / 100  differential load

Table 198 • Mini-LVDS AC Impedance Specifications

Parameter Symbol Typ Unit

Termination resistance RT100 

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 62

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V.

Table 199 • Mini-LVDS AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP Cross point V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

Table 200 • Mini-LVDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers)

On-Die Termination (ODT)

TPY

Unit–1 –Std

None 2.855 3.359 ns

100 2.85 3.353 ns

None 2.602 3.061 ns

100 2.597 3.055 ns

Table 201 • Mini-LVDS AC Switching Characteristics for Transmitter for MSIO I/O Bank (Output and

Tristate Buffers)

TDP TZL TZH THZ TLZ Unit

–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2.097 2.467 2.308 2.715 2.296 2.701 1.964 2.31 1.949 2.293 ns

Table 202 • Mini-LVDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and

Tristate Buffers)

TDP TZL TZH THZ TLZ Unit

–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

No pre-emphasis 1.614 1.899 1.562 1.837 1.553 1.826 1.593 1.874 1.578 1.856 ns

Min pre-emphasis 1.604 1.887 1.745 2.053 1.731 2.036 1.892 2.225 1.861 2.189 ns

Med pre-emphasis 1.521 1.79 1.753 2.062 1.737 2.043 1.9 2.235 1.868 2.197ns

Max pre-emphasis 1.492 1.754 1.762 2.073 1.745 2.052 1.91 2.247 1.876 2.206 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 63

2.3.7.5 RSDS

Reduced Swing Differential Signaling (RSDS) is similar to an LVDS high-speed interface using

differential signaling. RSDS has a similar implementation to LVDS devices and is only intended for

point-to-point applications.

Minimum and Maximum Input and Output Levels

Table 203 • RSDS Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 2.375 2.5 2.625 V

Table 204 • RSDS DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input voltage VI02.925V

Table 205 • RSDS DC Output Voltage Specification

Parameter Symbol Min Typ Max Unit

DC output logic high VOH 1.25 1.425 1.6 V

DC output logic low VOL 0.9 1.075 1.25 V

Table 206 • RSDS Differential Voltage Specification

Parameter Symbol Min Max Unit

Differential output voltage swing VOD 100 600 mV

Output common mode voltage VOCM 0.5 1.5 V

Input common mode voltage VICM 0.3 1.5 V

Input differential voltage VID 100 600 mV

Table 207 • RSDS Minimum and Maximum AC Switching Speed

Parameter Symbol Max Unit Conditions

Maximum data rate (for MSIO I/O bank) DMAX 520 Mbps AC loading: 2 pF / 100  differential load

Maximum data rate (for MSIOD I/O bank) DMAX 700 Mbps AC loading: 2 pF / 100  differential load

Table 208 • RSDS AC Impedance Specifications

Parameter Symbol Typ Unit

Termination resistance RT 100 

Table 209 • RSDS AC Test Parameter Specifications

Parameter Symbol Typ Unit

Measuring/trip point for data path VTRIP Cross point V

Resistance for enable path (TZH, TZL, THZ, TLZ)R

ENT 2K 

Capacitive loading for enable path (TZH, TZL, THZ, TLZ)C

ENT 5pF

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 64

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V.

2.3.7.6 LVPECL

Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires

that one data bit be carried through two signal lines. Similar to LVDS, two pins are needed. It also

requires external resistor termination. IGLOO2 and SmartFusion2 SoC FPGAs support only LVPECL

receivers and do not support LVPECL transmitters.

Minimum and Maximum Input and Output Levels (Applicable to MSIO I/O Bank Only)

Table 210 • RSDS AC Switching Characteristics for Receiver (for MSIO I/O Bank - Input Buffers)

On-Die Termination (ODT)

TPY

Unit–1 –Std

None 2.855 3.359 ns

100 2.85 3.353 ns

Table 211 • RSDS AC Switching Characteristics for Receiver (for MSIOD I/O Bank - Input Buffers)

On-Die Termination (ODT)

TPY

Unit–1 –Std

None 2.602 3.061 ns

100 2.597 3.055 ns

Table 212 • RSDS AC Switching Characteristics for Transmitter (for MSIO I/O Bank - Output and

Tristate Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

2.097 2.467 2.303 2.709 2.291 2.695 1.961 2.307 1.947 2.29 ns

Table 213 • RSDS AC Switching Characteristics for Transmitter (for MSIOD I/O Bank - Output and Tristate

Buffers)

TDP TZL TZH THZ TLZ

Unit–1 –Std –1 –Std –1 –Std –1 –Std –1 –Std

No pre-emphasis 1.614 1.899 1.559 1.834 1.55 1.823 1.59 1.87 1.575 1.852 ns

Min pre-emphasis 1.604 1.887 1.742 2.05 1.728 2.032 1.889 2.222 1.858 2.185 ns

Med pre-emphasis 1.521 1.79 1.753 2.062 1.737 2.043 1.9 2.235 1.868 2.197ns

Max pre-emphasis 1.492 1.754 1.762 2.073 1.745 2.052 1.91 2.247 1.876 2.206 ns

Table 214 • LVPECL Recommended DC Operating Conditions

Parameter Symbol Min Typ Max Unit

Supply voltage VDDI 3.15 3.3 3.45 V

Table 215 • LVPECL DC Input Voltage Specification

Parameter Symbol Min Max Unit

DC input voltage VI03.45V

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 65

AC Switching Characteristics

Worst commercial-case conditions: TJ = 85 °C, VDD = 1.14 V, VDDI = 2.375 V.

2.3.8 I/O Register Specifications

This section describes input and output register specifications.

2.3.8.1 Input Register

Figure 6 • Timing Model for Input Register

Table 216 • LVPECL DC Differential Voltage Specification

Parameter Symbol Min Typ Max Unit

Input common mode voltage VICM 0.3 2.8 V

Input differential voltage VIDIFF 100 300 1,000 mV

Table 217 • LVPECL Minimum and Maximum AC Switching Speeds

Parameter Symbol Max Unit

Maximum data rate DMAX 900 Mbps

Table 218 • LVPECL Receiver Characteristics for MSIO I/O Bank

On-Die Termination (ODT)

TPY

Unit –1 –Std

None 2.572 3.025 ns

100 2.569 3.023 ns

SLE

ALn

ADn

SLn

LAT

CLK

ALn

ADn

SLn

LAT

CLK

Input I/O Buffer

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 66

Figure 7 • I/O Register Input Timing Diagram

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 67

The following table lists the input data register propagation delays in worst commercial-case conditions

when TJ = 85 °C, VDD = 1.14 V.

Table 219 • Input Data Register Propagation Delays

Parameter Symbol

Measuring

Nodes

(from, to)1

1. For the derating values at specific junction temperature and voltage supply levels, see Table 16, page 15 for derating values.

–1 –Std Unit

Bypass delay of the input register TIBYP F, G 0.353 0.415 ns

Clock-to-Q of the input register TICLKQ E, G 0.16 0.188 ns

Data setup time for the input register TISUD A, E 0.357 0.421 ns

Data hold time for the input register TIHD A, E 0 0 ns

Enable setup time for the input register TISUE B, E 0.46 0.542 ns

Enable hold time for the input register TIHE B, E 0 0 ns

Synchronous load setup time for the input register TISUSL D, E 0.46 0.542 ns

Synchronous load hold time for the input register TIHSL D, E 0 0 ns

Asynchronous clear-to-Q of the input register (ADn=1) TIALN2Q C, G 0.625 0.735 ns

Asynchronous preset-to-Q of the input register (ADn=0) C, G 0.587 0.69 ns

Asynchronous load removal time for the input register TIREMALN C, E 0 0 ns

Asynchronous load recovery time for the input register TIRECALN C, E 0.074 0.087 ns

Asynchronous load minimum pulse width for the input register TIWALN C, C 0.304 0.357 ns

Clock minimum pulse width high for the input register TICKMPWH E, E 0.075 0.088 ns

Clock minimum pulse width low for the input register TICKMPWL E, E 0.159 0.187 ns

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 68

2.3.8.2 Output/Enable Register

Figure 8 • Timing Model for Output/Enable Register

SLE

ALn

ADn

SLn

LAT

CLK

SLE

ALn

ADn

SLn

LAT

CLK

Output/Enable Registers

ALn

ADn

SLn

LAT

CLK

Output I/O Buffer

with Enable Control

D2 J

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 69

Figure 9 • I/O Register Output Timing Diagram

The following table lists the output/enable propagation delays in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Table 220 • Output/Enable Data Register Propagation Delays

Parameter Symbol

Measuring

Nodes

(from, to)1

1. For the derating values at specific junction temperature and voltage supply levels, see Table 16, page 15 for derating values.

–1 –Std Unit

Bypass delay of the output/enable register TOBYP F, G or H, I 0.353 0.415 ns

Clock-to-Q of the output/enable register TOCLKQ E, G or E, I 0.263 0.309 ns

Data setup time for the output/enable register TOSUD A, E or J, E 0.19 0.223 ns

Data hold time for the output/enable register TOHD A, E or J, E 0 0 ns

Enable setup time for the output/enable register TOSUE B, E 0.419 0.493 ns

Enable hold time for the output/enable register TOHE B, E 0 0 ns

Synchronous load setup time for the output/enable register TOSUSL D, E 0.196 0.231 ns

Synchronous load hold time for the output/enable register TOHSL D, E 0 0 ns

Asynchronous clear-to-q of the output/enable register (ADn = 1) TOALN2Q C, G or C, I 0.505 0.594 ns

Asynchronous preset-to-q of the output/enable register (ADn = 0) C, G or C, I 0.528 0.621 ns

Asynchronous load removal time for the output/enable register TOREMALN C, E 0 0 ns

Asynchronous load recovery time for the output/enable register TORECALN C, E 0.034 0.04 ns

Asynchronous load minimum pulse width for the output/enable

TOWALN C, C 0.304 0.357 ns

Clock minimum pulse width high for the output/enable register TOCKMPWH E, E 0.075 0.088 ns

Clock minimum pulse width low for the output/enable register TOCKMPWL E, E 0.159 0.187 ns

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 70

2.3.9 DDR Module Specification

This section describes input and output DDR module and timing specifications.

2.3.9.1 Input DDR Module

Figure 10 • Input DDR Module

SLE

ALn

ADn

SLn

LAT

CLK

SLE

ALn

ADn

SLn

LAT

CLK

DDR_IN

Latch

ALn

ADn

CLK

ALn

ADn

SLn

LAT

CLK

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 71

2.3.9.2 Input DDR Timing Diagram

Figure 11 • Input DDR Timing Diagram

2.3.9.3 Timing Characteristics

The following table lists the input DDR propagation delays in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Table 221 • Input DDR Propagation Delays

Symbol Description

Measuring Nodes

(from, to) –1 –Std Unit

TDDRICLKQ1 Clock-to-Out Out_QR for input DDR B, C 0.16 0.188 ns

TDDRICLKQ2 Clock-to-Out Out_QF for input DDR B, D 0.166 0.195 ns

TDDRISUD Data setup for input DDR A, B 0.357 0.421 ns

TDDRIHD Data hold for input DDR A, B 0 0 ns

TDDRISUE Enable setup for input DDR E, B 0.46 0.542 ns

TDDRIHE Enable hold for input DDR E, B 0 0 ns

TDDRISUSLN Synchronous load setup for input DDR G, B 0.46 0.542 ns

TDDRIHSLN Synchronous load hold for input DDR G, B 0 0 ns

TDDRIAL2Q1 Asynchronous load-to-out QR for input DDR F, C 0.587 0.69 ns

TDDRIAL2Q2 Asynchronous load-to-out QF for input DDR F, D 0.541 0.636 ns

TDDRIREMAL Asynchronous load removal time for input DDR F, B 0 0 ns

TDDRIRECAL Asynchronous load recovery time for input DDR F, B 0.074 0.087 ns

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 72

TDDRIWAL Asynchronous load minimum pulse width for input

DDR

F, F 0.304 0.357 ns

TDDRICKMPWH Clock minimum pulse width high for input DDR B, B 0.075 0.088 ns

TDDRICKMPWL Clock minimum pulse width low for input DDR B, B 0.159 0.187 ns

Table 221 • Input DDR Propagation Delays (continued)

Symbol Description

Measuring Nodes

(from, to) –1 –Std Unit

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 73

2.3.9.4 Output DDR Module

Figure 12 • Output DDR Module

SLE

ALn

ADn

SLn

LAT

CLK

SLE

ALn

ADn

SLn

LAT

CLK

DDR _ OUT

ALn

ADn

SLn

LAT

CLK

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 74

Figure 13 • Output DDR Timing Diagram

2.3.9.5 Timing Characteristics

The following table lists the output DDR propagation delays in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Table 222 • Output DDR Propagation Delays

Symbol Description

Measuring Nodes

(from, to) –1 –Std Unit

TDDROCLKQ Clock-to-out of DDR for output DDR E, G 0.263 0.309 ns

TDDROSUDF Data_F data setup for output DDR F, E 0.143 0.168 ns

TDDROSUDR Data_R data setup for output DDR A, E 0.19 0.223 ns

TDDROHDF Data_F data hold for output DDR F, E 0 0 ns

TDDROHDR Data_R data hold for output DDR A, E 0 0 ns

TDDROSUE Enable setup for input DDR B, E 0.419 0.493 ns

TDDROHE Enable hold for input DDR B, E 0 0 ns

TDDROSUSLN Synchronous load setup for input DDR D, E 0.196 0.231 ns

TDDROHSLN Synchronous load hold for input DDR D, E 0 0 ns

TDDROAL2Q Asynchronous load-to-out for output DDR C, G 0.528 0.621 ns

TDDROREMAL Asynchronous load removal time for output DDR C, E 0 0 ns

TDDRORECAL Asynchronous load recovery time for output DDR C, E 0.034 0.04 ns

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 75

2.3.10 Logic Element Specifications

2.3.10.1 4-input LUT (LUT-4)

The IGLOO2 and SmartFusion2 SoC FPGAs offer a fully permutable 4-input LUT. In this section, timing

characteristics are presented for a sample of the library. For more details, see SmartFusion2 and

IGLOO2 Macro Library Guide.

Figure 14 • LUT-4

TDDROWAL Asynchronous load minimum pulse width for output

DDR

C, C 0.304 0.357 ns

TDDROCKMPWH Clock minimum pulse width high for the output DDR E, E 0.075 0.088 ns

TDDROCKMPWL Clock minimum pulse width low for the output DDR E, E 0.159 0.187 ns

Table 222 • Output DDR Propagation Delays (continued)

Symbol Description

Measuring Nodes

(from, to) –1 –Std Unit

TPD

PAD A

YPAD

PAD

D/S (where

applicable)

AND4 OR

Any

Combinational

Logic

PAD

TPD TPD

VDD

TPD

(RR)

A , B, C, D , S

OUT

50%

GND

(FF)

50%

GND

(RF)

50%

TPD = Max(tPD(RR), TPD(RF), TPD(FF), TPD(FR))

where edges are applicable for the particular

combinatorial cell

(FR) 50%

OUT

GND

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 76

2.3.10.2 Timing Characteristics

The following table lists the combinatorial cell propagation delays in worst commercial-case conditions

when TJ = 85 °C, VDD = 1.14 V.

2.3.10.3 Sequential Module

IGLOO2 and SmartFusion2 SoC FPGAs offer a separate flip-flop which can be used independently from

the LUT. The flip-flop can be configured as a register or a latch and has a data input and optional enable,

synchronous load (clear or preset), and asynchronous load (clear or preset).

Figure 15 • Sequential Module

Table 223 • Combinatorial Cell Propagation Delays

Combinatorial Cell Equation Symbol –1 –Std Unit

INV Y = !A TPD 0.1 0.118 ns

AND2 Y = A · B TPD 0.164 0.193 ns

NAND2 Y = !(A · B) TPD 0.147 0.173 ns

OR2 Y = A + B TPD 0.164 0.193 ns

NOR2 Y = !(A + B) TPD 0.147 0.173 ns

XOR2 Y = A  B TPD 0.164 0.193 ns

XOR3 Y = A  B  C TPD 0.225 0.265 ns

AND3 Y = A · B · C TPD 0.209 0.246 ns

AND4 Y = A · B · C · D TPD 0.287 0.338 ns

SLE

ALn

ADn

SLn

LAT

CLK

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 77

The following figure shows a configuration with SD = 0 (synchronous clear) and ADn = 1 (asynchronous

clear) for a flip-flop (LAT = 0).

Figure 16 • Sequential Module Timing Diagram

2.3.10.3.1 Timing Characteristics

The following table lists the register delays in worst commercial-case conditions when TJ = 85 °C,

VDD = 1.14 V.

Table 224 • Register Delays

Parameter Symbol –1 –Std Unit

Clock-to-Q of the core register TCLKQ 0.108 0.127 ns

Data setup time for the core register TSUD 0.254 0.298 ns

Data hold time for the core register THD 00 ns

Enable setup time for the core register TSUE 0.335 0.394 ns

Enable hold time for the core register THE 00 ns

Synchronous load setup time for the core register TSUSL 0.335 0.394 ns

Synchronous load hold time for the core register THSL 00 ns

Asynchronous Clear-to-Q of the core register (ADn = 1) TALN2Q

0.473 0.556 ns

Asynchronous preset-to-Q of the core register (ADn = 0) 0.451 0.531 ns

Asynchronous load removal time for the core register TREMALN 00 ns

Asynchronous load recovery time for the core register TRECALN 0.353 0.415 ns

Asynchronous load minimum pulse width for the core register TWALN 0.266 0.313 ns

Clock minimum pulse width high for the core register TCKMPWH 0.065 0.077 ns

Clock minimum pulse width low for the core register TCKMPWL 0.139 0.164 ns

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 78

2.3.11 Global Resource Characteristics

The IGLOO2 and SmartFusion2 SoC FPGA devices offer a powerful, low skew global routing network

which provides an effective clock distribution throughout the FPGA fabric. See UG0445: IGLOO2 FPGA

and SmartFusion2 SoC FPGA Fabric User Guide for the positions of various global routing resources.

The following table lists the 150 device global resources in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

The following table lists the 090 device global resources in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

The following table lists the 050 device global resources in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

The following table lists the 025 device global resources in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Table 225 • 150 Device Global Resource

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Input low delay for global clock TRCKL 0.83 0.911 0.831 0.913 ns

Input high delay for global clock TRCKH 1.457 1.588 1.715 1.869 ns

Maximum skew for global clock TRCKSW 0.131 0.154 ns

Table 226 • 090 Device Global Resource

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Input low delay for global clock TRCKL 0.835 0.888 0.833 0.886 ns

Input high delay for global clock TRCKH 1.405 1.489 1.654 1.752 ns

Maximum skew for global clock TRCKSW 0.084 0.098 ns

Table 227 • 050 Device Global Resource

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Input low delay for global clock TRCKL 0.827 0.897 0.826 0.896 ns

Input high delay for global clock TRCKH 1.419 1.53 1.671 1.8 ns

Maximum skew for global clock TRCKSW 0.111 0.129 ns

Table 228 • 025 Device Global Resource

Parameter Symbol

–1 –Std

UnitMinMaxMinMax

Input low delay for global clock TRCKL 0.747 0.799 0.745 0.797 ns

Input high delay for global clock TRCKH 1.294 1.378 1.522 1.621 ns

Maximum skew for global clock TRCKSW 0.084 0.099 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 79

The following table lists the 010 device global resources in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

The following table lists the 005 device global resources in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

2.3.12 FPGA Fabric SRAM

See UG0445: IGLOO2 FPGA and SmartFusion2 SoC FPGA Fabric User Guide for more information.

2.3.12.1 FPGA Fabric Large SRAM (LSRAM)

The following table lists the RAM1K18 – dual-port mode for depth × width configuration 1K × 18 in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

Table 229 • 010 Device Global Resource

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Input low delay for global clock TRCKL 0.626 0.669 0.627 0.668 ns

Input high delay for global clock TRCKH 1.112 1.182 1.308 1.393 ns

Maximum skew for global clock TRCKSW 0.07 0.085 ns

Table 230 • 005 Device Global Resource

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Input low delay for global clock TRCKL 0.625 0.66 0.628 0.66 ns

Input high delay for global clock TRCKH 1.126 1.187 1.325 1.397 ns

Maximum skew for global clock TRCKSW 0.061 0.072 ns

Table 231 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 1K × 18

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Clock period TCY 2.5 2.941 ns

Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns

Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns

Pipelined clock period TPLCY 2.5 2.941 ns

Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns

Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 1.323 ns

Read access time with pipeline register

TCLK2Q

0.334 0.393 ns

Read access time without pipeline register 2.273 2.674 ns

Access time with feed-through write timing 1.529 1.799 ns

Address setup time TADDRSU 0.441 0.519 ns

Address hold time TADDRHD 0.274 0.322 ns

Data setup time TDSU 0.341 0.401 ns

Data hold time TDHD 0.107 0.126 ns

Block select setup time TBLKSU 0.207 0.244 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 80

The following table lists the RAM1K18 – dual-port mode for depth × width configuration 2K × 9 in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

Block select hold time TBLKHD 0.216 0.254 ns

Block select to out disable time (when pipelined register is

disabled)

TBLK2Q 1.529 1.799 ns

Block select minimum pulse width TBLKMPW 0.186 0.219 ns

Read enable setup time TRDESU 0.449 0.528 ns

Read enable hold time TRDEHD 0.167 0.197 ns

Pipelined read enable setup time (A_DOUT_EN,

B_DOUT_EN)

TRDPLESU 0.248 0.291 ns

Pipelined read enable hold time (A_DOUT_EN,

B_DOUT_EN)

TRDPLEHD 0.102 0.12 ns

Asynchronous reset to output propagation delay TR2Q – 1.506 – 1.772 ns

Asynchronous reset removal time TRSTREM 0.506 0.595 ns

Asynchronous reset recovery time TRSTREC 0.004 0.005 ns

Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns

Pipelined register asynchronous reset removal time TPLRSTREM –0.279 –0.328 ns

Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns

Pipelined register asynchronous reset minimum pulse

width

TPLRSTMPW 0.282 0.332 ns

Synchronous reset setup time TSRSTSU 0.226 0.265 ns

Synchronous reset hold time TSRSTHD 0.036 0.043 ns

Write enable setup time TWESU 0.39 0.458 ns

Write enable hold time TWEHD 0.242 0.285 ns

Maximum frequency FMAX 400 340 MHz

Table 232 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 2K × 9

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Clock period TCY 2.5 2.941 ns

Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns

Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns

Pipelined clock period TPLCY 2.5 2.941 ns

Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns

Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 1.323 ns

Read access time with pipeline register

TCLK2Q

0.334 0.393 ns

Read access time without pipeline register 2.273 2.674 ns

Access time with feed-through write timing 1.529 1.799 ns

Table 231 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 1K × 18 (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

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The following table lists the RAM1K18 – dual-port mode for depth × width configuration 4K × 4 in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

Address setup time TADDRSU 0.475 0.559 ns

Address hold time TADDRHD 0.274 0.322 ns

Data setup time TDSU 0.336 0.395 ns

Data hold time TDHD 0.082 0.096 ns

Block select setup time TBLKSU 0.207 0.244 ns

Block select hold time TBLKHD 0.216 0.254 ns

Block select to out disable time (when pipelined register is

disabled)

TBLK2Q 1.529 1.799 ns

Block select minimum pulse width TBLKMPW 0.186 0.219 ns

Read enable setup time TRDESU 0.485 0.57 ns

Read enable hold time TRDEHD 0.071 0.083 ns

Pipelined read enable setup time (A_DOUT_EN,

B_DOUT_EN)

TRDPLESU 0.248 0.291 ns

Pipelined read enable hold time (A_DOUT_EN,

B_DOUT_EN)

TRDPLEHD 0.102 0.12 ns

Asynchronous reset to output propagation delay TR2Q 1.514 1.781 ns

Asynchronous reset removal time TRSTREM 0.506 0.595 ns

Asynchronous reset recovery time TRSTREC 0.004 0.005 ns

Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns

Pipelined register asynchronous reset removal time TPLRSTREM –0.279 –0.328 ns

Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns

Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns

Synchronous reset setup time TSRSTSU 0.226 0.265 ns

Synchronous reset hold time TSRSTHD 0.036 0.043 ns

Write enable setup time TWESU 0.415 0.488 ns

Write enable hold time TWEHD 0.048 0.057 ns

Maximum frequency FMAX 400 340 MHz

Table 233 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 4K × 4

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Clock period TCY 2.5 2.941 ns

Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns

Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns

Pipelined clock period TPLCY 2.5 2.941 ns

Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns

Table 232 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 2K × 9 (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

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Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 1.323 ns

Read access time with pipeline register

TCLK2Q

0.323 0.38 ns

Read access time without pipeline register 2.273 2.673 ns

Access time with feed-through write timing 1.511 1.778 ns

Address setup time TADDRSU 0.543 0.638 ns

Address hold time TADDRHD 0.274 0.322 ns

Data setup time TDSU 0.334 0.393 ns

Data hold time TDHD 0.082 0.096 ns

Block select setup time TBLKSU 0.207 0.244 ns

Block select hold time TBLKHD 0.216 0.254 ns

Block select to out disable time (when pipelined

TBLK2Q 1.511 1.778 ns

Block select minimum pulse width TBLKMPW 0.186 0.219 ns

Read enable setup time TRDESU 0.516 0.607 ns

Read enable hold time TRDEHD 0.071 0.083 ns

Pipelined read enable setup time (A_DOUT_EN,

B_DOUT_EN)

TRDPLESU 0.248 0.291 ns

Pipelined read enable hold time (A_DOUT_EN,

B_DOUT_EN)

TRDPLEHD 0.102 0.12 ns

Asynchronous reset to output propagation delay TR2Q 1.507 1.773 ns

Asynchronous reset removal time TRSTREM 0.506 0.595 ns

Asynchronous reset recovery time TRSTREC 0.004 0.005 ns

Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns

Pipelined register asynchronous reset removal time TPLRSTREM –0.279 –0.328 ns

Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns

Pipelined register asynchronous reset minimum pulse

width

TPLRSTMPW 0.282 0.332 ns

Synchronous reset setup time TSRSTSU 0.226 0.265 ns

Synchronous reset hold time TSRSTHD 0.036 0.043 ns

Write enable setup time TWESU 0.458 0.539 ns

Write enable hold time TWEHD 0.048 0.057 ns

Maximum frequency FMAX 400 340 MHz

Table 233 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 4K × 4 (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

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The following table lists the RAM1K18 – dual-port mode for depth × width configuration 8K × 2 in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

Table 234 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 8K × 2

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Clock period TCY 2.5 2.941 ns

Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns

Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns

Pipelined clock period TPLCY 2.5 2.941 ns

Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns

Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 1.323 ns

Read access time with pipeline register

TCLK2Q

0.32 0.377 ns

Read access time without pipeline register 2.272 2.673 ns

Access time with feed-through write timing 1.511 1.778 ns

Address setup time TADDRSU 0.612 0.72 ns

Address hold time TADDRHD 0.274 0.322 ns

Data setup time TDSU 0.33 0.388 ns

Data hold time TDHD 0.082 0.096 ns

Block select setup time TBLKSU 0.207 0.244 ns

Block select hold time TBLKHD 0.216 0.254 ns

Block select to out disable time (when pipelined register is

disabled)

TBLK2Q 1.511 1.778 ns

Block select minimum pulse width TBLKMPW 0.186 0.219 ns

Read enable setup time TRDESU 0.529 0.622 ns

Read enable hold time TRDEHD 0.071 0.083 ns

Pipelined read enable setup time (A_DOUT_EN,

B_DOUT_EN)

TRDPLESU 0.248 0.291 ns

Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns

Asynchronous reset to output propagation delay TR2Q 1.528 1.797 ns

Asynchronous reset removal time TRSTREM 0.506 0.595 ns

Asynchronous reset recovery time TRSTREC 0.004 0.005 ns

Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns

Pipelined register asynchronous reset removal time TPLRSTREM –0.279 –0.328 ns

Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns

Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns

Synchronous reset setup time TSRSTSU 0.226 0.265 ns

Synchronous reset hold time TSRSTHD 0.036 0.043 ns

Write enable setup time TWESU 0.488 0.574 ns

Write enable hold time TWEHD 0.048 0.057 ns

Maximum frequency FMAX 400 340 MHz

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The following table lists the RAM1K18 – dual-port mode for depth × width configuration 16K × 1 in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

Table 235 • RAM1K18 – Dual-Port Mode for Depth × Width Configuration 16K × 1

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Clock period TCY 2.5 2.941 ns

Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns

Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns

Pipelined clock period TPLCY 2.5 2.941 ns

Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns

Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 1.323 ns

Read access time with pipeline register

TCLK2Q

0.32 0.377 ns

Read access time without pipeline register 2.269 2.669 ns

Access time with feed-through write timing 1.51 1.777 ns

Address setup time TADDRSU 0.626 0.737 ns

Address hold time TADDRHD 0.274 0.322 ns

Data setup time TDSU 0.322 0.378 ns

Data hold time TDHD 0.082 0.096 ns

Block select setup time TBLKSU 0.207 0.244 ns

Block select hold time TBLKHD 0.216 0.254 ns

Block select to out disable time (when pipelined register is

disabled)

TBLK2Q 1.51 1.777 ns

Block select minimum pulse width TBLKMPW 0.186 0.219 ns

Read enable setup time TRDESU 0.53 0.624 ns

Read enable hold time TRDEHD 0.071 0.083 ns

Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns

Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns

Asynchronous reset to output propagation delay TR2Q 1.547 1.82 ns

Asynchronous reset removal time TRSTREM 0.506 0.595 ns

Asynchronous reset recovery time TRSTREC 0.004 0.005 ns

Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns

Pipelined register asynchronous reset removal time TPLRSTREM –0.279 –0.328 ns

Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns

Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns

Synchronous reset setup time TSRSTSU 0.226 0.265 ns

Synchronous reset hold time TSRSTHD 0.036 0.043 ns

Write enable setup time TWESU 0.454 0.534 ns

Write enable hold time TWEHD 0.048 0.057 ns

Maximum frequency FMAX 400 340 MHz

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The following table lists the RAM1K18 – two-port mode for depth × width configuration 512 × 36 in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

Table 236 • RAM1K18 – Two-Port Mode for Depth × Width Configuration 512 × 36

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Clock period TCY 2.5 2.941 ns

Clock minimum pulse width high TCLKMPWH 1.125 1.323 ns

Clock minimum pulse width low TCLKMPWL 1.125 1.323 ns

Pipelined clock period TPLCY 2.5 2.941 ns

Pipelined clock minimum pulse width high TPLCLKMPWH 1.125 1.323 ns

Pipelined clock minimum pulse width low TPLCLKMPWL 1.125 1.323 ns

Read access time with pipeline register TCLK2Q

0.334 0.393 ns

Read access time without pipeline register 2.25 2.647 ns

Address setup time TADDRSU 0.313 0.368 ns

Address hold time TADDRHD 0.274 0.322 ns

Data setup time TDSU 0.337 0.396 ns

Data hold time TDHD 0.111 0.13 ns

Block select setup time TBLKSU 0.207 0.244 ns

Block select hold time TBLKHD 0.201 0.237 ns

Block select to out disable time (when pipelined register is

disabled)

TBLK2Q 2.25 2.647 ns

Block select minimum pulse width TBLKMPW 0.186 0.219 ns

Read enable setup time TRDESU 0.449 0.528 ns

Read enable hold time TRDEHD 0.167 0.197 ns

Pipelined read enable setup time (A_DOUT_EN, B_DOUT_EN) TRDPLESU 0.248 0.291 ns

Pipelined read enable hold time (A_DOUT_EN, B_DOUT_EN) TRDPLEHD 0.102 0.12 ns

Asynchronous reset to output propagation delay TR2Q 1.506 1.772 ns

Asynchronous reset removal time TRSTREM 0.506 0.595 ns

Asynchronous reset recovery time TRSTREC 0.004 0.005 ns

Asynchronous reset minimum pulse width TRSTMPW 0.301 0.354 ns

Pipelined register asynchronous reset removal time TPLRSTREM –0.279 –0.328 ns

Pipelined register asynchronous reset recovery time TPLRSTREC 0.327 0.385 ns

Pipelined register asynchronous reset minimum pulse width TPLRSTMPW 0.282 0.332 ns

Synchronous reset setup time TSRSTSU 0.226 0.265 ns

Synchronous reset hold time TSRSTHD 0.036 0.043 ns

Write enable setup time TWESU 0.39 0.458 ns

Write enable hold time TWEHD 0.242 0.285 ns

Maximum frequency FMAX 400 340 MHz

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2.3.12.2 FPGA Fabric Micro SRAM (µSRAM)

The following table lists the µSRAM in 64 × 18 mode in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Table 237 • µSRAM (RAM64x18) in 64 × 18 Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Read clock period TCY 44ns

Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns

Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns

Read pipeline clock period TPLCY 44ns

Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns

Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns

Read access time with pipeline register TCLK2Q

0.266 0.313 ns

Read access time without pipeline register 1.677 1.973 ns

Read address setup time in synchronous mode TADDRSU

0.301 0.354 ns

Read address setup time in asynchronous mode 1.856 2.184 ns

Read address hold time in synchronous mode TADDRHD

0.091 0.107 ns

Read address hold time in asynchronous mode –0.778 –0.915 ns

Read enable setup time TRDENSU 0.278 0.327 ns

Read enable hold time TRDENHD 0.057 0.067 ns

Read block select setup time TBLKSU 1.839 2.163 ns

Read block select hold time TBLKHD –0.65 –0.765 ns

Read block select to out disable time (when pipelined

TBLK2Q 2.036 2.396 ns

Read asynchronous reset removal time (pipelined clock)

TRSTREM

–0.023 –0.027 ns

Read asynchronous reset removal time (non-pipelined

clock)

0.046 0.054 ns

Read asynchronous reset recovery time (pipelined clock)

TRSTREC

0.507 0.597 ns

Read asynchronous reset recovery time (non-pipelined

clock)

0.236 0.278 ns

Read asynchronous reset to output propagation delay

(with pipelined register enabled)

TR2Q 0.839 0.987 ns

Read synchronous reset setup time TSRSTSU 0.271 0.319 ns

Read synchronous reset hold time TSRSTHD 0.061 0.071 ns

Write clock period TCCY 44ns

Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns

Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns

Write block setup time TBLKCSU 0.404 0.476 ns

Write block hold time TBLKCHD 0.007 0.008 ns

Write input data setup time TDINCSU 0.115 0.135 ns

Write input data hold time TDINCHD 0.15 0.177 ns

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The following table lists the µSRAM in 64 × 16 mode in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Write address setup time TADDRCSU 0.088 0.104 ns

Write address hold time TADDRCHD 0.128 0.15 ns

Write enable setup time TWECSU 0.397 0.467 ns

Write enable hold time TWECHD –0.026 –0.03 ns

Maximum frequency FMAX 250 250 MHz

Table 238 • µSRAM (RAM64x16) in 64 × 16 Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Read clock period TCY 44ns

Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns

Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns

Read pipeline clock period TPLCY 44ns

Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns

Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns

Read access time with pipeline register TCLK2Q

0.266 0.313 ns

Read access time without pipeline register 1.677 1.973 ns

Read address setup time in synchronous mode TADDRSU

0.301 0.354 ns

Read address setup time in asynchronous mode 1.856 2.184 ns

Read address hold time in synchronous mode TADDRHD

0.091 0.107 ns

Read address hold time in asynchronous mode –0.778 –0.915 ns

Read enable setup time TRDENSU 0.278 0.327 ns

Read enable hold time TRDENHD 0.057 0.067 ns

Read block select setup time TBLKSU 1.839 2.163 ns

Read block select hold time TBLKHD –0.65 –0.765 ns

Read block select to out disable time (when pipelined

TBLK2Q 2.036 2.396 ns

Read asynchronous reset removal time (pipelined clock)

TRSTREM

–0.023 –0.027 ns

Read asynchronous reset removal time (non-pipelined

clock)

0.046 0.054 ns

Read asynchronous reset recovery time (pipelined clock)

TRSTREC

0.507 0.597 ns

Read asynchronous reset recovery time (non-pipelined

clock)

0.236 0.278 ns

Read asynchronous reset to output propagation delay (with

pipelined register enabled)

TR2Q 0.835 0.983 ns

Read synchronous reset setup time TSRSTSU 0.271 0.319 ns

Table 237 • µSRAM (RAM64x18) in 64 × 18 Mode (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

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The following table lists the µSRAM in 128 × 9 mode in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Read synchronous reset hold time TSRSTHD 0.061 0.071 ns

Write clock period TCCY 44ns

Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns

Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns

Write block setup time TBLKCSU 0.404 0.476 ns

Write block hold time TBLKCHD 0.007 0.008 ns

Write input data setup time TDINCSU 0.115 0.135 ns

Write input data hold time TDINCHD 0.15 0.177 ns

Write address setup time TADDRCSU 0.088 0.104 ns

Write address hold time TADDRCHD 0.128 0.15 ns

Write enable setup time TWECSU 0.397 0.467 ns

Write enable hold time TWECHD –0.026 –0.03 ns

Maximum frequency FMAX 250 250 MHz

Table 239 • µSRAM (RAM128x9) in 128 × 9 Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Read clock period TCY 44ns

Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns

Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns

Read pipeline clock period TPLCY 44ns

Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns

Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns

Read access time with pipeline register TCLK2Q

0.266 0.313 ns

Read access time without pipeline register 1.677 1.973 ns

Read address setup time in synchronous mode TADDRSU

0.301 0.354 ns

Read address setup time in asynchronous mode 1.856 2.184 ns

Read address hold time in synchronous mode TADDRHD

0.091 0.107 ns

Read address hold time in asynchronous mode –0.778 –0.915 ns

Read enable setup time TRDENSU 0.278 0.327 ns

Read enable hold time TRDENHD 0.057 0.067 ns

Read block select setup time TBLKSU 1.839 2.163 ns

Read block select hold time TBLKHD –0.65 –0.765 ns

Read block select to out disable time (when pipelined

TBLK2Q 2.036 2.396 ns

Table 238 • µSRAM (RAM64x16) in 64 × 16 Mode (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

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The following table lists the µSRAM in 128 × 8 mode in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Read asynchronous reset removal time (pipelined clock)

TRSTREM

–0.023 –0.027 ns

Read asynchronous reset removal time (non-pipelined

clock)

0.046 0.054 ns

Read asynchronous reset recovery time (pipelined clock)

TRSTREC

0.507 0.597 ns

Read asynchronous reset recovery time (non-pipelined

clock)

0.236 0.278 ns

Read asynchronous reset to output propagation delay (with

pipelined register enabled)

TR2Q 0.835 0.982 ns

Read synchronous reset setup time TSRSTSU 0.271 0.319 ns

Read synchronous reset hold time TSRSTHD 0.061 0.071 ns

Write clock period TCCY 44ns

Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns

Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns

Write block setup time TBLKCSU 0.404 0.476 ns

Write block hold time TBLKCHD 0.007 0.008 ns

Write input data setup time TDINCSU 0.115 0.135 ns

Write input data hold time TDINCHD 0.15 0.177 ns

Write address setup time TADDRCSU 0.088 0.104 ns

Write address hold time TADDRCHD 0.128 0.15 ns

Write enable setup time TWECSU 0.397 0.467 ns

Write enable hold time TWECHD –0.026 –0.03 ns

Maximum frequency FMAX 250 250 MHz

Table 240 • µSRAM (RAM128x8) in 128 × 8 Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Read clock period TCY 44ns

Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns

Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns

Read pipeline clock period TPLCY 44ns

Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns

Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns

Read access time with pipeline register TCLK2Q

0.266 0.313 ns

Read access time without pipeline register 1.677 1.973 ns

Read address setup time in synchronous mode TADDRSU

0.301 0.354 ns

Read address setup time in asynchronous mode 1.856 2.184 ns

Table 239 • µSRAM (RAM128x9) in 128 × 9 Mode (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

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Read address hold time in synchronous mode TADDRHD

0.091 0.107 ns

Read address hold time in asynchronous mode –0.778 –0.915 ns

Read enable setup time TRDENSU 0.278 0.327 ns

Read enable hold time TRDENHD 0.057 0.067 ns

Read block select setup time TBLKSU 1.839 2.163 ns

Read block select hold time TBLKHD –0.65 –0.765 ns

Read block select to out disable time (when pipelined

TBLK2Q 2.036 2.396 ns

Read asynchronous reset removal time (pipelined clock)

TRSTREM

–0.023 –0.027 ns

Read asynchronous reset removal time (non-pipelined

clock)

0.046 0.054 ns

Read asynchronous reset recovery time (pipelined clock)

TRSTREC

0.507 0.597 ns

Read asynchronous reset recovery time (non-pipelined

clock)

0.236 0.278 ns

Read asynchronous reset to output propagation delay (with

pipelined register enabled)

TR2Q 0.835 0.982 ns

Read synchronous reset setup time TSRSTSU 0.271 0.319 ns

Read synchronous reset hold time TSRSTHD 0.061 0.071 ns

Write clock period TCCY 44ns

Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns

Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns

Write block setup time TBLKCSU 0.404 0.476 ns

Write block hold time TBLKCHD 0.007 0.008 ns

Write input data setup time TDINCSU 0.115 0.135 ns

Write input data hold time TDINCHD 0.15 0.177 ns

Write address setup time TADDRCSU 0.088 0.104 ns

Write address hold time TADDRCHD 0.128 0.15 ns

Write enable setup time TWECSU 0.397 0.467 ns

Write enable hold time TWECHD –0.026 –0.03 ns

Maximum frequency FMAX 250 250 MHz

Table 240 • µSRAM (RAM128x8) in 128 × 8 Mode (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

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The following table lists the µSRAM in 256 × 4 mode in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Table 241 • µSRAM (RAM256x4) in 256 × 4 Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Read clock period TCY 44ns

Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns

Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns

Read pipeline clock period TPLCY 44ns

Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns

Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns

Read access time with pipeline register TCLK2Q

0.27 0.31 ns

Read access time without pipeline register 1.75 2.06 ns

Read address setup time in synchronous mode TADDRSU

0.301 0.354 ns

Read address setup time in asynchronous mode 1.931 2.272 ns

Read address hold time in synchronous mode TADDRHD

0.121 0.142 ns

Read address hold time in asynchronous mode –0.65 –0.76 ns

Read enable setup time TRDENSU 0.278 0.327 ns

Read enable hold time TRDENHD 0.057 0.067 ns

Read block select setup time TBLKSU 1.839 2.163 ns

Read block select hold time TBLKHD –0.65 –0.77 ns

Read block select to out disable time (when pipelined

TBLK2Q 2.09 2.46 ns

Read asynchronous reset removal time (pipelined clock)

TRSTREM

–0.02 –0.03 ns

Read asynchronous reset removal time (non-pipelined

clock)

0.046 0.054 ns

Read asynchronous reset recovery time (pipelined clock)

TRSTREC

0.507 0.597 ns

Read asynchronous reset recovery time (non-pipelined

clock)

0.236 0.278 ns

Read asynchronous reset to output propagation delay

(with pipelined register enabled)

TR2Q 0.83 0.98 ns

Read synchronous reset setup time TSRSTSU 0.271 0.319 ns

Read synchronous reset hold time TSRSTHD 0.061 0.071 ns

Write clock period TCCY 44ns

Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns

Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns

Write block setup time TBLKCSU 0.404 0.476 ns

Write block hold time TBLKCHD 0.007 0.008 ns

Write input data setup time TDINCSU 0.101 0.118 ns

Write input data hold time TDINCHD 0.137 0.161 ns

Write address setup time TADDRCSU 0.088 0.104 ns

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The following table lists the µSRAM in 512 × 2 mode in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Write address hold time TADDRCHD 0.245 0.288 ns

Write enable setup time TWECSU 0.397 0.467 ns

Write enable hold time TWECHD –0.03 –0.03 ns

Maximum frequency FMAX 250 250 MHz

Table 242 • µSRAM (RAM512x2) in 512 × 2 Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Read clock period TCY 44ns

Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns

Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns

Read pipeline clock period TPLCY 44ns

Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns

Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns

Read access time with pipeline register TCLK2Q

0.27 0.31 ns

Read access time without pipeline register 1.76 2.08 ns

Read address setup time in synchronous mode TADDRSU

0.301 0.354 ns

Read address setup time in asynchronous mode 1.96 2.306 ns

Read address hold time in synchronous mode TADDRHD

0.137 0.161 ns

Read address hold time in asynchronous mode –0.58 –0.68 ns

Read enable setup time TRDENSU 0.278 0.327 ns

Read enable hold time TRDENHD 0.057 0.067 ns

Read block select setup time TBLKSU 1.839 2.163 ns

Read block select hold time TBLKHD –0.65 –0.77 ns

Read block select to out disable time (when pipelined

TBLK2Q 2.14 2.52 ns

Read asynchronous reset removal time (pipelined clock)

TRSTREM

–0.02 –0.03 ns

Read asynchronous reset removal time (non-pipelined

clock)

0.046 0.054 ns

Read asynchronous reset recovery time (pipelined clock)

TRSTREC

0.507 0.597 ns

Read asynchronous reset recovery time (non-pipelined

clock)

0.236 0.278 ns

Read asynchronous reset to output propagation delay (with

pipelined register enabled)

TR2Q 0.83 0.98 ns

Read synchronous reset setup time TSRSTSU 0.271 0.319 ns

Read synchronous reset hold time TSRSTHD 0.061 0.071 ns

Table 241 • µSRAM (RAM256x4) in 256 × 4 Mode (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 93

The following table lists the µSRAM in 1024 × 1 mode in worst commercial-case conditions when

TJ = 85 °C, VDD = 1.14 V.

Write clock period TCCY 44ns

Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns

Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns

Write block setup time TBLKCSU 0.404 0.476 ns

Write block hold time TBLKCHD 0.007 0.008 ns

Write input data setup time TDINCSU 0.101 0.118 ns

Write input data hold time TDINCHD 0.137 0.161 ns

Write address setup time TADDRCSU 0.088 0.104 ns

Write address hold time TADDRCHD 0.247 0.29 ns

Write enable setup time TWECSU 0.397 0.467 ns

Write enable hold time TWECHD –0.03 –0.03 ns

Maximum frequency FMAX 250 250 MHz

Table 243 • µSRAM (RAM1024x1) in 1024 × 1 Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Read clock period TCY 44ns

Read clock minimum pulse width high TCLKMPWH 1.8 1.8 ns

Read clock minimum pulse width low TCLKMPWL 1.8 1.8 ns

Read pipeline clock period TPLCY 44ns

Read pipeline clock minimum pulse width high TPLCLKMPWH 1.8 1.8 ns

Read pipeline clock minimum pulse width low TPLCLKMPWL 1.8 1.8 ns

Read access time with pipeline register TCLK2Q

0.27 0.31 ns

Read access time without pipeline register 1.78 2.1 ns

Read address setup time in synchronous mode TADDRSU

0.301 0.354 ns

Read address setup time in asynchronous mode 1.978 2.327 ns

Read address hold time in synchronous mode TADDRHD

0.137 0.161 ns

Read address hold time in asynchronous mode –0.6 –0.71 ns

Read enable setup time TRDENSU 0.278 0.327 ns

Read enable hold time TRDENHD 0.057 0.067 ns

Read block select setup time TBLKSU 1.839 2.163 ns

Read block select hold time TBLKHD –0.65 –0.77 ns

Read block select to out disable time (when pipelined register

is disabled)

TBLK2Q 2.16 2.54 ns

Read asynchronous reset removal time (pipelined clock) TRSTREM

–0.02 –0.03 ns

Read asynchronous reset removal time (non-pipelined clock) 0.046 0.054 ns

Table 242 • µSRAM (RAM512x2) in 512 × 2 Mode (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 94

2.3.13 Programming Times

The following tables list the programming times in typical conditions when TJ = 25 °C, VDD = 1.2 V.

External SPI flash part# AT25DF641-s3H is used during this measurement.

Read asynchronous reset recovery time (pipelined clock) TRSTREC

0.507 0.597 ns

Read asynchronous reset recovery time (non-pipelined clock) 0.236 0.278 ns

Read asynchronous reset to output propagation delay (with

pipelined register enabled)

TR2Q 0.83 0.98 ns

Read synchronous reset setup time TSRSTSU 0.271 0.319 ns

Read synchronous reset hold time TSRSTHD 0.061 0.071 ns

Write clock period TCCY 44ns

Write clock minimum pulse width high TCCLKMPWH 1.8 1.8 ns

Write clock minimum pulse width low TCCLKMPWL 1.8 1.8 ns

Write block setup time TBLKCSU 0.404 0.476 ns

Write block hold time TBLKCHD 0.007 0.008 ns

Write input data setup time TDINCSU 0.003 0.004 ns

Write input data hold time TDINCHD 0.137 0.161 ns

Write address setup time TADDRCSU 0.088 0.104 ns

Write address hold time TADDRCHD 0.247 0.29 ns

Write enable setup time TWECSU 0.397 0.467 ns

Write enable hold time TWECHD –0.03 –0.03 ns

Maximum frequency FMAX 250 250 MHz

Table 244 • JTAG Programming (Fabric Only)

M2S/M2GL

Device Image size Bytes Program Verify Unit

005 302672 22 10 Sec

010 568784 28 18 Sec

025 1223504 51 26 Sec

050 2424832 66 54 Sec

060 2418896 77 54 Sec

090 3645968 113 126 Sec

150 6139184 155 193 Sec

Table 243 • µSRAM (RAM1024x1) in 1024 × 1 Mode (continued)

Parameter Symbol

–1 –Std

UnitMin Max Min Max

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 95

Table 245 • JTAG Programming (eNVM Only)

M2S/M2GL

Device Image size Bytes Program Verify Unit

005 137536 39 4 Sec

010 274816 78 9 Sec

025 274816 78 9 Sec

050 278528 84 8 Sec

060 268480 76 8 Sec

090 544496 154 15 Sec

150 544496 155 15 Sec

Table 246 • JTAG Programming (Fabric and eNVM)

M2S/M2GL

Device Image size Bytes Program Verify Unit

005 439296 59 11 Sec

010 842688 107 20 Sec

025 1497408 120 35 Sec

050 2695168 162 59 Sec

060 2686464 158 70 Sec

090 4190208 266 147 Sec

150 6682768 316 231 Sec

Table 247 • 2 Step IAP Programming (Fabric Only)

M2S/M2GL

Device Image size Bytes Authenticate Program Verify Unit

005 302672 4 17 6 Sec

010 568784 7 23 12 Sec

025 1223504 14 33 23 Sec

050 2424832 29 52 40 Sec

060 2418896 39 61 50 Sec

090 3645968 60 84 73 Sec

150 6139184 100 132 120 Sec

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 96

Table 248 • 2 Step IAP Programming (eNVM Only)

M2S/M2GL

Device Image size Bytes Authenticate Program Verify Unit

005 137536 2 37 5 Sec

010 274816 4 76 11 Sec

025 274816 4 78 10 Sec

050 278528 3 85 9 Sec

060 268480 5 76 22 Sec

090 544496 10 152 43 Sec

150 544496 10 153 44 Sec

Table 249 • 2 Step IAP Programming (Fabric and eNVM)

M2S/M2GL

Device Image size Bytes Authenticate Program Verify Unit

005 439296 6 56 11 Sec

010 842688 11 100 21 Sec

025 1497408 19 113 32 Sec

050 2695168 32 136 48 Sec

060 2686464 43 137 70 Sec

090 4190208 68 236 115 Sec

150 6682768 109 286 162 Sec

Table 250 • SmartFusion2 Cortex-M3 ISP Programming (Fabric Only)

M2S/M2GL

Device

Image size

Bytes Authenticate Program Verify Unit

005 302672 6 19 8 Sec

010 568784 10 26 14 Sec

025 1223504 21 39 29 Sec

050 2424832 39 60 50 Sec

060 2418896 44 65 54 Sec

090 3645968 66 90 79 Sec

150 6139184 108 140 128 Sec

Table 251 • SmartFusion2 Cortex-M3 ISP Programming (eNVM Only)

M2S/M2GL

Device

Image size

Bytes Authenticate Program Verify Unit

005 137536 3 42 4 Sec

010 274816 4 82 7 Sec

025 274816 4 82 8 Sec

050 278528 4 80 8 Sec

060 268480 6 80 8 Sec

090 544496 10 157 15 Sec

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 97

150 544496 10 158 15 Sec

Table 252 • SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM)

M2S/M2GL

Device

Image size

Bytes Authenticate Program Verify Unit

005 439296 9 61 11 Sec

010 842688 15 107 21 Sec

025 1497408 26 121 35 Sec

050 2695168 43 141 55 Sec

060 2686464 48 143 60 Sec

090 4190208 75 244 91 Sec

150 6682768 117 296 141 Sec

Table 253 • Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates

(Fabric Only)

M2S/M2GL

Device

Auto

Programming Auto Update

Programming

Recovery

Unit 100 kHz 25 MHz 12.5 MHz

005 47 27 28 Sec

010 77 35 35 Sec

025 150 42 41 Sec

050 331Not Supported Not Supported Sec

060 291 83 82 Sec

090 427 109 108 Sec

150 708 157 160 Sec

1. Auto Programming in 050 device is done through SC_SPI, and SPI CLK is set

to 6.25 MHz.

Table 254 • Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates

(eNVM Only)

M2S/M2GL

Device

Auto

Programming Auto Update

Programming

Recovery

Unit 100 kHz 25 MHz 12.5 MHz

005 41 48 49 Sec

010 86 87 87 Sec

025 87 85 86 Sec

050 85 Not Supported Not Supported Sec

060 78 86 86 Sec

090 154 162 162 Sec

Table 251 • SmartFusion2 Cortex-M3 ISP Programming (eNVM Only) (continued)

M2S/M2GL

Device

Image size

Bytes Authenticate Program Verify Unit

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 98

150 161 161 161 Sec

Table 255 • Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates

(Fabric and eNVM)

M2S/M2GL

Device

Auto

Programming Auto Update

Programming

Recovery

Unit100 kHz 25 MHz 12.5 MHz

005 47 27 28 Sec

010 77 35 35 Sec

025 150 42 41 Sec

050 331Not Supported Not Supported Sec

060 291 83 82 Sec

090 427 109 108 Sec

150 708 157 160 Sec

005 41 48 49 Sec

010 86 87 87 Sec

025 87 85 86 Sec

050 85 Not Supported Not Supported Sec

060 78 86 86 Sec

090 154 162 162 Sec

150 161 161 161 Sec

005 87 67 66 Sec

010 161 113 113 Sec

025 229 120 121 Sec

050 112 Not Supported Not Supported Sec

060 368 161 158 Sec

090 582 261 260 Sec

150 867 309 310 Sec

1. Auto Programming in 050 device is done through SC_SPI, and SPI CLK is set to 6.25

MHz.

Table 254 • Programming Times with 100 kHz, 25 MHz, and 12.5 MHz SPI Clock Rates

(eNVM Only) (continued)

M2S/M2GL

Device

Auto

Programming Auto Update

Programming

Recovery

Unit 100 kHz 25 MHz 12.5 MHz

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 99

The following table lists the programming times in worst-case conditions when TJ = 100 °C, VDD = 1.14 V.

External SPI flash part# AT25DF641-s3H is used during this measurement.

Table 256 • JTAG Programming (Fabric Only)

M2S/M2GL Device

Image size

Bytes Program Verify Unit

005 302672 44 10 Sec

010 568784 50 18 Sec

025 1223504 73 26 Sec

050 2424832 88 54 Sec

060 2418896 99 54 Sec

090 3645968 135 126 Sec

150 6139184 177 193 Sec

Table 257 • JTAG Programming (eNVM Only)

M2S/M2GL Device

Image size

Bytes Program Verify Unit

005 137536 61 4 Sec

010 274816 100 9 Sec

025 274816 100 9 Sec

050 2,78,528 106 8 Sec

060 268480 98 8 Sec

090 544496 176 15 Sec

150 544496 177 15 Sec

Table 258 • JTAG Programming (Fabric and eNVM)

M2S/M2GL Device

Image size

Bytes Program Verify Unit

005 439296 71 11 Sec

010 842688 129 20 Sec

025 1497408 142 35 Sec

050 2695168 184 59 Sec

060 2686464 180 70 Sec

090 4190208 288 147 Sec

150 6682768 338 231 Sec

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 100

Table 259 • 2 Step IAP Programming (Fabric Only)

M2S/M2GL Device

Image size

Bytes Authenticate Program Verify Unit

005 302672 4 39 6 Sec

010 568784 7 45 12 Sec

025 1223504 14 55 23 Sec

050 2424832 29 74 40 Sec

060 2418896 39 83 50 Sec

090 3645968 60 106 73 Sec

150 6139184 100 154 120 Sec

Table 260 • 2 Step IAP Programming (eNVM Only)

M2S/M2GL Device

Image size

Bytes Authenticate Program Verify Unit

005 137536 2 59 5 Sec

010 274816 4 98 11 Sec

025 274816 4 100 10 Sec

050 2,78,528 3 107 9 Sec

060 268480 5 98 22 Sec

090 544496 10 174 43 Sec

150 544496 10 175 44 Sec

Table 261 • 2 Step IAP Programming (Fabric and eNVM)

M2S/M2GL Device

Image size

Bytes Authenticate Program Verify Unit

005 439296 6 78 11 Sec

010 842688 11 122 21 Sec

025 1497408 19 135 32 Sec

050 2695168 32 158 48 Sec

060 2686464 43 159 70 Sec

090 4190208 68 258 115 Sec

150 6682768 109 308 162 Sec

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 101

Table 262 • SmartFusion2 Cortex-M3 ISP Programming (Fabric Only)

M2S/M2GL

Device

Image size

Bytes Authenticate Program Verify Unit

005 302672 6 41 8 Sec

010 568784 10 48 14 Sec

025 1223504 21 61 29 Sec

050 2424832 39 82 50 Sec

060 2418896 44 87 54 Sec

090 3645968 66 112 79 Sec

150 6139184 108 162 128 Sec

Table 263 • SmartFusion2 Cortex-M3 ISP Programming (eNVM Only)

M2S/M2GL

Device

Image size

Bytes Authenticate Program Verify Unit

005 137536 3 64 4 Sec

010 274816 4 104 7 Sec

025 274816 4 104 8 Sec

050 2,78,528 4 102 8 Sec

060 268480 6 102 8 Sec

090 544496 10 179 15 Sec

150 544496 10 180 15 Sec

Table 264 • SmartFusion2 Cortex-M3 ISP Programming (Fabric and eNVM)

M2S/M2GL

Device

Image size

Bytes Authenticate Program Verify Unit

005 439296 9 83 11 Sec

010 842688 15 129 21 Sec

025 1497408 26 143 35 Sec

050 2695168 43 163 55 Sec

060 2686464 48 165 60 Sec

090 4190208 75 266 91 Sec

150 6682768 117 318 141 Sec

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 102

Table 265 • Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric

Only)

M2S/M2GL Device

Auto Programming Auto Update Programming Recovery

Unit 100 kHz 25 MHz 12.5 MHz

005 69 49 50 Sec

010 99 57 57 Sec

025 150 64 63 Sec

050 551Not Supported Not Supported Sec

060 313 105 104 Sec

090 449 131 130 Sec

150 730 179 183 Sec

1. Auto programming in 050 device is done through SC_SPI, and SPI CLK is set to 6.25 MHz.

Table 266 • Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (eNVM

Only)

M2S/M2GL Device

Auto Programming Auto Update Programming Recovery

Unit 100 kHz 25 MHz 12.5 MHz

005 63 70 71 Sec

010 108 109 109 Sec

025 109 107 108 Sec

050 107 Not Supported Not Supported Sec

060 100 108 108 Sec

090 176 184 184 Sec

150 183 183 183 Sec

Table 267 • Programming Times with 100 kHz, 25 MHz. and 12.5 MHz SPI Clock Rates (Fabric and

eNVM)

M2S/M2GL Device

Auto Programming Auto Update Programming Recovery

Unit 100 kHz 25 MHz 12.5 MHz

005 109 89 88 Sec

010 183 135 135 Sec

025 251 142 143 Sec

050 134 Not Supported Not Supported Sec

060 390 183 180 Sec

090 604 283 282 Sec

150 889 331 332 Sec

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 103

2.3.14 Math Block Timing Characteristics

The fundamental building block in any digital signal processing algorithm is the multiply-accumulate

function. Each IGLOO2 and SmartFusion2 SoC math block supports 18×18 signed multiplication, dot

product, and built-in addition, subtraction, and accumulation units to combine multiplication results

efficiently. The following table lists the math blocks with all registers used in worst commercial-case

conditions when TJ = 85 °C, VDD = 1.14 V.

The following table lists the math blocks with input bypassed and output registers used in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

Table 268 • Math Blocks with all Registers Used

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Input, control register setup time TMISU 0.149 0.176 ns

Input, control register hold time TMIHD 1.68 1.976 ns

CDIN input setup time TMOCDINSU 0.185 0.218 ns

CDIN input hold time TMOCDINHD 0.08 0.094 ns

Synchronous reset/enable setup time TMSRSTENSU –0.419 –0.493 ns

Synchronous reset/enable hold time TMSRSTENHD 0.011 0.013 ns

Asynchronous reset removal time TMARSTREM 00ns

Asynchronous reset recovery time TMARSTREC 0.088 0.104 ns

Output register clock to out delay TMOCQ 0.232 0.273 ns

CLK minimum period TMCLKMP 2.245 2.641 ns

Table 269 • Math Block with Input Bypassed and Output Registers Used

Parameter Symbol

–1 –Std

UnitMinMaxMinMax

Output register setup time TMOSU 2.294 2.699 ns

Output register hold time TMOHD 1.68 1.976 ns

CDIN input setup time TMOCDINSU 0.115 0.136 ns

CDIN input hold time TMOCDINHD –0.444 –0.522 ns

Synchronous reset/enable setup time TMSRSTENSU –0.419 –0.493 ns

Synchronous reset/enable hold time TMSRSTENHD 0.011 0.013 ns

Asynchronous reset removal time TMARSTREM 00ns

Asynchronous reset recovery time TMARSTREC 0.014 0.017 ns

Output register clock to out delay TMOCQ 0.232 0.273 ns

CLK minimum period TMCLKMP 2.179 2.563 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 104

The following table lists the math blocks with input register used and output in bypass mode in worst

commercial-case conditions when TJ = 85 °C, VDD = 1.14 V.

The following table lists the math blocks with input and output in bypass mode in worst commercial-case

conditions when TJ = 85 °C, VDD = 1.14 V.

2.3.15 Embedded NVM (eNVM) Characteristics

The following table lists the eNVM read performance in worst-case conditions when VDD = 1.14 V,

VPPNVM = VPP = 2.375 V.

The following table lists the eNVM page programming in worst-case conditions when VDD = 1.14 V,

VPPNVM = VPP = 2.375 V.

Table 270 • Math Block with Input Register Used and Output in Bypass Mode

Parameter Symbol

–1 –Std

UnitMin Max Min Max

Input register setup time TMISU 0.149 0.176 ns

Input register hold time TMIHD 0.185 0.218 ns

Synchronous reset/enable setup time TMSRSTENSU 0.08 0.094 ns

Synchronous reset/enable hold time TMSRSTENHD –0.012 –0.014 ns

Asynchronous reset removal time TMARSTREM –0.005 –0.005 ns

Asynchronous reset recovery time TMARSTREC 0.088 0.104 ns

Input register clock to output delay TMICQ 2.52 2.964 ns

CDIN to output delay TMCDIN2Q 1.951 2.295 ns

Table 271 • Math Block with Input and Output in Bypass Mode

Parameter Symbol

–1 –Std

UnitMax Max

Input to output delay TMIQ 2.568 3.022 ns

CDIN to output delay TMCDIN2Q 1.951 2.295 ns

Table 272 • eNVM Read Performance

Symbol Description

Operating Temperature Range

Unit –1 –Std –1 –Std –1 –Std

TJJunction temperature range –55 °C to 125 °C –40 °C to 100 °C 0 °C to 85 °C °C

FMAXREAD eNVM maximum read

frequency

25 25 25 25 25 25 MHz

Table 273 • eNVM Page Programming

Symbol Description

Operating Temperature Range

Unit –1 –Std –1 –Std –1 –Std

TJJunction temperature range –55 °C to 125 °C –40 °C to 100 °C 0 °C to 85 °C °C

TPAGEPGM eNVM page programming time 40 40 40 40 40 40 ms

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 105

2.3.16 SRAM PUF

For more details on static random-access memory (SRAM) physical unclonable functions (PUF)

services, see AC434: Using SRAM PUF System Service in SmartFusion2 Application Note.

The following table lists the SRAM PUF in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V.

Table 274 • SRAM PUF

Service

PUF Off PUF On

UnitTyp Max Typ Max

Create activation code 709.1 746.4 754.4 762.5 ms

Delete activation code 1329.3 1399.3 1414.1 1429.3 ms

Create intrinsic keycode 656.6 691.1 698.5 706.0 ms

Create extrinsic keycode 656.6 691.1 698.5 706.0 ms

Get number of keys 1.3 1.4 1.4 1.4 ms

Export (Kc0, Kc1) 998.0 1050.5 1061.7 1073.1 ms

Export 2 keycodes 2020.2 2126.5 2149.2 2172.3 ms

Export 4 keycodes 3065.7 3227.0 3261.3 3296.4 ms

Export 8 keycodes 5101.0 5369.5 5426.6 5485.0 ms

Export 16 keycodes 9212.1 9697.0 9800.1 9905.5 ms

Import (Kc0, Kc1) 39.7 41.8 42.2 42.7 ms

Import 2 keycodes 50.1 52.7 53.3 53.9 ms

Import 4 keycodes 60.6 63.8 64.5 65.2 ms

Import 8 keycodes 80.9 85.1 86.1 87.0 ms

Import 16 keycodes 123.8 130.4 131.7 133.2 ms

Delete keycode 552.5 581.6 587.8 594.1 ms

Fetch key 31.4 33.0 33.4 33.7 ms

Fetch ecc key 20.0 21.1 21.3 21.5 ms

Get seed 2.0 2.1 2.2 2.2 ms

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 106

2.3.17 Non-Deterministic Random Bit Generator (NRBG)

Characteristics

For more information about NRBG, see AC407: Using NRBG Services in SmartFusion2 and IGLOO2

Devices Application Note. The following table lists the NRBG in worst-case industrial conditions when

TJ = 100 °C, VDD = 1.14 V.

2.3.18 Cryptographic Block Characteristics

For more information about cryptographic block and associated services, see AC410: Using AES System

Services in SmartFusion2 and IGLOO2 Devices Application Note and AC432: Using SHA-256 System

Services in SmartFusion2 and IGLOO2 Devices Application Note.

The following table lists the cryptographic block characteristics in worst-case industrial conditions when

TJ = 100 °C, VDD = 1.14 V.

Table 275 • Non-Deterministic Random Bit Generator (NRBG)

Service Timing Unit

Conditions

Prediction

Resistance

Additional

Input

Instantiate 85 ms OFF X

Generate

(after Instantiate)1

1. If PUF_OFF, generate will incur additional PUF delay time for consecutive service calls.

4.5 ms + (6.25 us/byte x No. of Bytes) OFF 0

6.0 ms + (6.25 us/byte x No. of Bytes) OFF 64

7.0 ms + (6.25 us/byte x No. of Bytes) OFF 128

Generate

(after Instantiate)

47 ms ON X

Generate

(subsequent)1

0.5 ms + (6.25 us/byte x No. of Bytes) OFF 0

2.0 ms + (6.25 us/byte x No. of Bytes) OFF 64

3.0 ms + (6.25 us/byte x No. of Bytes) OFF 128

Generate

(subsequent)

43 ms ON X

Reseed 40 ms

Uninstantiate 0.16 ms

Reset 0.10 ms

Self test 20 ms First time after power-up

6 ms Subsequent

Table 276 • Cryptographic Block Characteristics

Service Conditions Timing Unit

Any service First certificate check penalty at boot 11.5 ms

AES128/256

(encoding / decoding)1

100 blocks up to 64k blocks 700 kbps

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Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 107

2.3.19 Crystal Oscillator

The following table describes the electrical characteristics of the crystal oscillator in the IGLOO2 FPGA

and SmartFusion2 SoC FPGAs.

SHA256 512 bits 540 kbps

1024 bits 780 kbps

2048 bits 950 kbps

24 kbits 1140 kbps

HMAC 512 bytes 820 kbps

1024 bytes 890 kbps

2048 bytes 930 kbps

24 kbytes 980 kbps

KeyTree 1.8 ms

Challenge-response PUF = OFF 25 ms

PUF = ON 7 ms

ECC point multiplication 590 ms

ECC point addition 8 ms

1. Using cypher block chaining (CBC) mode.

Table 277 • Electrical Characteristics of the Crystal Oscillator – High Gain Mode (20 MHz)

Parameter Symbol Min Typ Max Unit Condition

Operating frequency FXTAL 20 MHz

Accuracy ACCXTAL 0.0047 % 005, 010, 025, 050, 060,

and 090 devices

0.0058 % 150 devices

Output duty cycle CYCXTAL 49–51 47–53 %

Output period jitter (peak to

peak)

JITPERXTAL 200 300 ps

Output cycle to cycle jitter (peak

to peak)

JITCYCXTAL 200 300 ps 010, 025, 050, and 060

devices

250 410 ps 150 devices

250 550 ps 005 and 090 devices

Operating current IDYNXTAL 1.5 mA 010, 050, and 060

devices

1.65 mA 005, 025, 090, and 150

devices

Input logic level high VIHXTAL 0.9 VPP V

Input logic level low VILXTAL 0.1 VPP V

Table 276 • Cryptographic Block Characteristics (continued)

Service Conditions Timing Unit

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 108

Startup time (with regard to

stable oscillator output)

SUXTAL 0.8 ms 005, 010, 025, and 050

devices

1.0 ms 090 and 150 devices

Table 278 • Electrical Characteristics of the Crystal Oscillator – Medium Gain Mode (2 MHz)

Parameter Symbol Min Typ Max Unit Condition

Operating frequency FXTAL 2 MHz

Accuracy ACCXTAL 0.00105 % 050 devices

0.003 % 005, 010, 025, 090, and

150 devices

0.004 % 060 devices

Output duty cycle CYCXTAL 49–51 47–53 %

Output period jitter (peak to

peak)

JITPERXTAL 1 5 ns

Output cycle to cycle jitter (peak

to peak)

JITCYCXTAL 1 5 ns

Operating current IDYNXTAL 0.3 mA

Input logic level high VIHXTAL 0.9 VPP V

Input logic level low VILXTAL 0.1 VPP V

Startup time (with regard to

stable oscillator output)

SUXTAL 4.5 ms 010 and 050 devices

5 ms 005 and 025 devices

7 ms 090 and 150 devices

Table 279 • Electrical Characteristics of the Crystal Oscillator – Low Gain Mode (32 kHz)

Parameter Symbol Min Typ Max Unit Condition

Operating frequency FXTAL 32 kHz

Accuracy ACCXTAL 0.004 % 005, 010, 025, 050, 060,

and 090 devices

0.005 % 150 devices

Output duty cycle CYCXTAL 49–51 47–53 %

Output period jitter (peak to peak) JITPERXTAL 150 300 ns

Output cycle to cycle jitter (peak to

peak)

JITCYCXTAL 150 300 ns

Operating current IDYNXTAL 0.044 mA 010 and 050 devices

0.060 mA 005, 025, 060, 090, and

150 devices

Input logic level high VIHXTAL 0.9 VPP V

Input logic level low VILXTAL 0.1 VPP V

Startup time (with regard to stable

oscillator output)

SUXTAL 115 ms 005, 025, 050, 090, and

150 devices

126 ms 010 devices

Table 277 • Electrical Characteristics of the Crystal Oscillator – High Gain Mode (20 MHz) (continued)

Parameter Symbol Min Typ Max Unit Condition

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 109

2.3.20 On-Chip Oscillator

The following tables describe the electrical characteristics of the available on-chip oscillators in the

IGLOO2 FPGAs and SmartFusion2 SoC FPGAs.

Table 280 • Electrical Characteristics of the 50 MHz RC Oscillator

Parameter Symbol Typ Max Unit Condition

Operating frequency F50RC 50 MHz

Accuracy ACC50RC 1 4 % 050 devices

1 5 % 005, 025, and 060 devices

1 6.3 % 090 devices

1 7.1 % 010 and 150 devices

Output duty cycle CYC50RC 49–51 46.5–53.5 %

Output jitter (peak to peak) JIT50RC Period Jitter

200 300 ps 005, 010, 050, and 060 devices

200 400 ps 150 devices

300 500 ps 025 and 090 devices

Cycle-to-Cycle Jitter

200 300 ps 005 and 050 devices

320 420 ps 010, 060, and 150 devices

320 850 ps 025 and 090 devices

Operating current IDYN50RC 6.5 mA

Table 281 • Electrical Characteristics of the 1 MHz RC Oscillator

Parameter Symbol Typ Max Unit Condition

Operating frequency F1RC 1 MHz

Accuracy ACC1RC 1 3 % 005, 010, 025, and 050 devices

1 4.5 % 060, and 150 devices

1 5.6 % 090 devices

Output duty cycle CYC1RC 49–51 46.5–53.5 % 005, 010, 025, 050, 090 and 150 devices

49-51 46.0-54.0 % 060 devices

Output jitter (peak to peak) JIT1RC Period Jitter

10 20 ns 005, 010, 025, and 050 devices

10 28 ns 060, 090 and 150 devices

Cycle-to-Cycle Jitter

10 20 ns 005, 010, and 050 devices

10 35 ns 025, 060, and 150 devices

10 45 ns 090 devices

Operating current IDYN1RC 0.1 mA

Startup time SU1RC 17 µs 050, 090, and 150 devices

18 µs 005, 010, and 025 devices

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 110

2.3.21 Clock Conditioning Circuits (CCC)

The following table lists the CCC/PLL specifications in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V.

Table 282 • IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Specification

Parameter Min Typ Max Unit Conditions

Clock conditioning circuitry input

frequency FIN_CCC

1 200 MHz All CCC

0.032 200 MHz 32 kHz capable CCC

Clock conditioning circuitry output

frequency FOUT_CCC1

0.078 400 MHz

PLL VCO frequency2500 1000 MHz

Delay increments in programmable

delay blocks

75 100 ps

Number of programmable values in

each programmable delay block

Acquisition time 70 100 µs FIN >= 1 MHz

116 msF

IN = 32 kHz

Input duty cycle (reference clock) Internal Feedback

10 90 % 1 MHz ≤ FIN_CCC ≤ 25 MHz

25 75 % 25 MHz ≤ FIN_CCC≤ 100 MHz

35 65 % 100 MHz ≤ FIN_CCC ≤ 150 MHz

45 55 % 150 MHz ≤ FIN_CCC ≤ 200 MHz

External Feedback (CCC, FPGA,

Off-chip)

25 75 % 1 MHz ≤ FIN_CCC ≤ 25 MHz

35 65 % 25 MHz ≤ FIN_CCC ≤ 35 MHz

45 55 % 35 MHz ≤ FIN_CCC ≤ 50 MHz

Output duty cycle 48 52 % 050 devices FOUT ≤ 400 MHz

48 52 % 005, 010, and 025 devices

FOUT < 350 MHz

46 54 % 005, 010, and 025 devices

350 MHz ≤ Fout ≤ 400 MHz

48 52 % 060 and 090 devices

FOUT ≤ 100 MHz

44 52 % 060 and 090 devices

100 MHz ≤ FOUT ≤ 400 MHz

48 52 % 150 devices

FOUT ≤ 120 MHz

45 52 % 150 devices

120 MHz ≤ FOUT ≤ 400 MHz

Spread Spectrum Characteristics

Modulation frequency range 25 35 50 k

Modulation depth range 0 1.5 %

Modulation depth control 0.5 %

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 111

The following table lists the CCC/PLL jitter specifications in worst-case industrial conditions when

TJ = 100 °C, VDD = 1.14 V.

2.3.22 JTAG

1. The minimum output clock frequency is limited by the PLL. For more information, see UG0449: SmartFusion2 and IGLOO2

Clocking Resources User Guide.

2. The PLL is used in conjunction with the Clock Conditioning Circuitry. Performance is limited by the CCC output frequency.

Table 283 • IGLOO2 and SmartFusion2 SoC FPGAs CCC/PLL Jitter Specifications

CCC Output Maximum Peak-to-Peak Period Jitter FOUT_CCC

Parameter Conditions/Package Combinations Unit

10 FG484, 050

FG896/FG484/FCS325

Packages1

SSO = 0 0 < SSO <= 2 SSO <= 4 SSO <= 8 SSO <= 16

20 MHz to 100 MHz Max(110, ± 1% x

(1/FOUT_CCC))

Max(150, ± 1% x (1/FOUT_CCC)) ps

100 MHz to 400 MHz Max(120, ± 1% x

(1/FOUT_CCC))

Max(150, ± 1% x (1/FOUT_CCC)) Max(170, ± 1% x

(1/FOUT_CCC))

025 FG484/FCS325

Package1

0 < SSO <=16

20 MHz to 74 MHz ± 1% x (1/FOUT_CCC)) ps

74 MHz to 400 MHz 210 ps

005 FG484 Package10 < SSO <=16

20 MHz to 53 MHz ± 1% x (1/FOUT_CCC)) ps

53 MHz to 400 MHz 270 ps

090 FG676 and FC325

Package1

0 < SSO <=16

20 MHz to 100 MHz ± 1% x (1/FOUT_CCC)) ps

100 MHz to 400 MHz 150 ps

060 FG676 Package1

1. SSO data is based on LVCMOS 2.5 V MSIO and/or MSIOD bank I/Os.

0 < SSO <=16

20 MHz to 100 MHz ± 1% x (1/FOUT_CCC)ps

100 MHz to 400 MHz 150

150 FC1152 Package10 < SSO <=16

20 MHz to 100 MHz ± 1% x (1/FOUT_CCC)) ps

100 MHz to 400 MHz 120 ps

Table 284 • JTAG 1532 for 005, 010, 025, and 050 Devices

Parameter Symbol

005 010 025 050 Unit

–1 –Std –1 –Std –1 –Std –1 –Std

Clock to Q

(data out)

TTCK2Q 7.47 8.79 7.73 9.09 7.75 9.12 7.89 9.28 ns

Reset to Q

(data out)

TRSTB2Q 7.65 9 6.43 7.56 6.13 7.21 7.40 8.70 ns

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 112

Test data input

setup time

TDISU –1.05 –0.89 –0.69 –0.59 –0.67 –0.57 –0.30 –0.25 ns

Test data input

hold time

TDIHD 2.38 2.8 2.38 2.8 2.42 2.85 2.09 2.45 ns

Test mode

select setup

time

TTMSSU

–0.73 –0.62 –1.03 –1.21 –1.1 –0.94 0.28 0.33 ns

Test mode

select hold

time

TTMDHD

1.36 1.6 1.43 1.68 1.93 2.27 0.16 0.19 ns

ResetB

removal time

TTRSTREM –0.77 –0.65 –1.08 –0.92 –1.33 –1.13 –0.45 –0.38 ns

ResetB

recovery time

TTRSTREC –0.76 –0.65 –1.07 –0.91 –1.34 –1.14 –0.45 –0.38 ns

TCK

maximum

frequency

FTCKMAX

25 21.25 25 21.25 25 21.25 25.00 21.25 MHz

Table 285 • JTAG 1532 for 060, 090, and 150 Devices

Parameter Symbol

060 090 150

Unit–1 –Std –1 –Std –1 –Std

Clock to Q (data out) TTCK2Q 8.38 9.86 8.96 10.54 8.66 10.19 ns

Reset to Q (data out) TRSTB2Q 8.54 10.04 7.75 9.12 8.79 10.34 ns

Test data input setup

time

TDISU –1.18 –1 –1.31 –1.11 –0.96 –0.82 ns

Test data input hold

time

TDIHD 2.52 2.97 2.68 3.15 2.57 3.02 ns

Test mode select setup

time

TTMSSU –0.97 –0.83 –1.02 –0.87 –0.53 –0.45 ns

Test mode select hold

time

TTMDHD 1.7 2 1.67 1.96 1.02 1.2 ns

ResetB removal time TTRSTREM –1.21 –1.03 –0.76 –0.65 –1.03 –0.88 ns

ResetB recovery time TTRSTREC –1.21 –1.03 –0.77 –0.65 –1.03 –0.88 ns

TCK maximum

frequency

FTCKMAX 25 21.25 25 21.25 25 21.25 MHz

Table 284 • JTAG 1532 for 005, 010, 025, and 050 Devices (continued)

Parameter Symbol

005 010 025 050 Unit

–1 –Std –1 –Std –1 –Std –1 –Std

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 113

2.3.23 System Controller SPI Characteristics

The following table lists the system controller characteristics in worst-case industrial conditions when

TJ = 100 °C, VDD = 1.14 V.

Table 286 • System Controller SPI Characteristics for All Devices

Symbol Description Conditions Min Typ Unit

sp1 SC_SPI_SCK minimum period 20 ns

sp2 SC_SPI_SCK minimum pulse width high 10 ns

sp3 SC_SPI_SCK minimum pulse width low 10 ns

sp41

1. For specific Rise/Fall Times, board design considerations and detailed output buffer resistances, use the corresponding IBIS

models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx. Use

the supported I/O Configurations for the System Controller SPI in the following table.

SC_SPI_SCK, SC_SPI_SDO,

SC_SPI_SS rise time

(10%–90%) 1

I/O configuration: LVTTL 3.3 V–

20 mA

AC loading: 35 pF

Test conditions: Typical voltage,

25 °C

1.239 ns

sp51SC_SPI_SCK, SC_SPI_SDO,

SC_SPI_SS fall time

(10%–90%) 1

I/O configuration: LVTTL 3.3 V–

20 mA

AC loading: 35 pF

Test conditions: Typical voltage,

25 °C

1.245 ns

sp6 SC_SPI_SDO setup time 160 ns

sp7 SC_SPI_SDO hold time 160 ns

sp8 SC_SPI_SDI setup time 20 ns

sp9 SC_SPI_SDI hold time 20 ns

Table 287 • Supported I/O Configurations for System Controller SPI (for MSIO Bank Only)

Voltage Supply I/O Drive Configuration Unit

3.3 V 20 mA

2.5 V 16 mA

1.8 V 12 mA

1.5 V 8 mA

1.2 V 4 mA

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 114

2.3.24 Power-up to Functional Times

The following table lists power-up to functional times in worst-case industrial conditions when TJ = 100

°C, VDD = 1.14 V.

Note: For more information about power-up times, see UG0331: SmartFusion2 Microcontroller Subsystem

User Guide and UG0448: IGLOO2 FPGA High Performance Memory Subsystem User Guide.

Table 288 • Power-up to Functional Times When MSS/HPMS is Used

Symbol From To Description

Maximum Power-up to Functional Time (uS)

005 010 025 050 060 090 150

TPOR2OUT POWER_ON

_RESET_N

Output

available at

I/O

Fabric to

output

647 500 531 483 474 524 647

TPOR2MSSRST POWER_ON

_RESET_N

MSS_RESE

T_N_M2F

Fabric to

MSS

644 497 528 480 468 518 641

TMSSRST2OUT MSS_RESET

_N_M2F

Output

available at

I/O

MSS to

output

3.6 3.6 3.6 3.4 4.9 4.8 4.8

TVDD2OUT VDD Output

available at

I/O

VDD at its

minimum

threshold

level to

output

3096 2975 3012 2959 2869 2992 3225

TVDD2POR VDD POWER_O

N_RESET_

VDD at its

minimum

threshold

level to

fabric

2476 2487 2496 2486 2406 2563 2602

TVDD2MSSRST VDD MSS_RESE

T_N_M2F

VDD at its

minimum

threshold

level to MSS

3093 2972 3008 2956 2864 2987 3220

TVDD2WPU DEVRST_N DDRIO

Inbuf weak

pull

DEVRST_N

to Inbuf weak

pull

2500 2487 2509 2475 2507 2519 2617

DEVRST_N MSIO Inbuf

weak pull

DEVRST_N

to Inbuf weak

pull

2504 2491 2510 2478 2517 2525 2620

DEVRST_N MSIOD

Inbuf weak

pull

DEVRST_N

to Inbuf weak

pull

2479 2468 2493 2458 2486 2499 2595

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 115

Figure 17 • Power-up to Functional Timing Diagram for SmartFusion2

The following table lists power-up to functional times in worst-case industrial conditions when TJ = 100

°C, VDD = 1.14 V.

Note: For more information about power-up times, see UG0448: IGLOO2 FPGA High Performance Memory

Subsystem User Guide and UG0331: SmartFusion2 Microcontroller Subsystem User Guide.

Table 289 • Power-up to Functional Times When MSS/HPMS is not Used

Symbol From To Description

Maximum Power-up to Functional Time (uS)

005 010 025 050 060 090 150

TPOR2OUT POWER_ON

_RESET_N

Output

available at

I/O

Fabric to

output

114 114 114 113 114 114 114

TVDD2OUT VDD Output

available at

I/O

VDD at its

minimum

threshold level

to output

2587 2600 2607 2558 2591 2600 2699

TVDD2POR VDD POWER_ON_

RESET_N

VDD at its

minimum

threshold level

to fabric

2474 2486 2493 2445 2477 2486 2585

TVDD2WPU DEVRST_N DDRIO Inbuf

weak pull

DEVRST_N to

Inbuf weak pull

2500 2487 2509 2475 2507 2519 2617

DEVRST_N MSIO Inbuf

weak pull

DEVRST_N to

Inbuf weak pull

2504 2491 2510 2478 2517 2525 2620

DEVRST_N MSIOD Inbuf

weak pull

DEVRST_N to

Inbuf weak pull

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 116

Figure 18 • Power-up to Functional Timing Diagram for IGLOO2

2.3.25 DEVRST_N Characteristics

2.3.26 DEVRST_N to Functional Times

The following table lists the DEVRST_N to functional times in worst-case industrial conditions when TJ =

100 °C, VDD = 1.14 V.

Table 290 • DEVRST_N Characteristics for All Devices

Parameter Symbol Max Unit

DEVRST_N ramp time TRAMPDEVRSTN 1us

DEVRST_N cycling rate FMAXPDEVRSTN 100 kHz

Table 291 • DEVRST_N to Functional Times When MSS/HPMS is Used

Symbol From To Description

Maximum Power-up to Functional Time (uS)

005 010 025 050 060 090 150

TPOR2OUT POWER_ON

_RESET_N

Output

available at

I/O

Fabric to

output

518 501 527 521 422 419 694

TPOR2MSSRST POWER_ON

_RESET_N

MSS_RESE

T_N_M2F

Fabric to

MSS

515 497 524 518 417 414 689

TMSSRST2OUT MSS_RESET

_N_M2F

Output

available at

I/O

MSS to

output

3.5 3.5 3.5 3.3 4.8 4.8 4.8

TDEVRST2OUT DEVRST_N Output

available at

I/O

VDD at its

minimum

threshold

level to

output

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 117

Figure 19 • DEVRST_N to Functional Timing Diagram for SmartFusion2

TDEVRST2POR DEVRST_N POWER_O

N_RESET_

VDD at its

minimum

threshold

level to

fabric

233 289 216 213 237 234 219

TDEVRST2MSSRST DEVRST_N MSS_RESE

T_N_M2F

VDD at its

minimum

threshold

level to MSS

702 765 712 688 636 630 866

TDEVRST2WPU DEVRST_N DDRIO

Inbuf weak

pull

DEVRST_N

to Inbuf weak

pull

208 202 197 193 216 215 215

DEVRST_N MSIO Inbuf

weak pull

DEVRST_N

to Inbuf weak

pull

208 202 197 193 216 215 215

DEVRST_N MSIOD

Inbuf weak

pull

DEVRST_N

to Inbuf weak

pull

208 202 197 193 216 215 215

Table 291 • DEVRST_N to Functional Times When MSS/HPMS is Used (continued)

Symbol From To Description

Maximum Power-up to Functional Time (uS)

005 010 025 050 060 090 150

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 118

Figure 20 • DEVRST_N to Functional Timing Diagram for IGLOO2

The following table lists the DEVRST_N to functional times in worst-case industrial conditions when TJ =

100 °C, VDD = 1.14 V.

Table 292 • DEVRST_N to Functional Times When MSS/HPMS is not Used

Symbol From To Description

Maximum Power-up to Functional Time (uS)

005 010 025 050 060 090 150

TPOR2OUT POWER_ON

_RESET_N

Output

available at

I/O

Fabric to

output

114 116 113 113 115 115 114

TDEVRST2OUT DEVRST_N Output

available at

I/O

VDD at its

minimum

threshold

level to

output

314 353 314 307 343 341 341

TDEVRST2POR DEVRST_N POWER_O

N_RESET_

VDD at its

minimum

threshold

level to

fabric

200 238 201 195 230 229 227

TDEVRST2WPU DEVRST_N DDRIO

Inbuf weak

pull

DEVRST_N

to Inbuf weak

pull

208 202 197 193 216 215 215

DEVRST_N MSIO Inbuf

weak pull

DEVRST_N

to Inbuf weak

pull

208 202 197 193 216 215 215

DEVRST_N MSIOD

Inbuf weak

pull

DEVRST_N

to Inbuf weak

pull

208 202 197 193 216 215 215

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IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 119

2.3.27 Flash*Freeze Timing Characteristics

The following table lists the Flash*Freeze entry and exit times in worst-case industrial conditions when

TJ = 100 °C, VDD = 1.14 V.

2.3.28 DDR Memory Interface Characteristics

The following table lists the DDR memory interface characteristics in worst-case industrial conditions

when TJ = 100 °C, VDD = 1.14 V.

Table 293 • Flash*Freeze Entry and Exit Times

Parameter Symbol

Entry/Exit Timing

FCLK = 100MHz

Entry/Exit

Timing

FCLK = 3 MHz

Unit Conditions

005, 010, 025,

060, 090, and

150 050 All Devices

Entry time TFF_ENTRY 160 150 320 μs eNVM and MSS/HPMS PLL =

215 200 430 μs eNVM and MSS/HPMS PLL=

OFF

Exit time with

respect to the

MSS PLL Lock

TFF_EXIT 100 100 140 μs eNVM and MSS/HPMS PLL =

ON during F*F

136 120 190

μs

eNVM = ON and MSS/HPMS

PLL = OFF during F*F and

MSS/HPMS PLL turned back

on at exit

200 200 285

μs

eNVM and MSS/HPMS PLL =

OFF during F*F and both are

turned back on at exit

200 200 285

μs

eNVM = OFF and MSS/HPMS

PLL = ON during F*F and

eNVM turned back on at exit

Exit time with

respect to the

fabric PLL lock1

1. PLL Lock Delay set to 1024 cycles (default).

TFF_EXIT 1.5 1.5 1.5 ms eNVM and MSS/HPMS PLL =

ON during F*F

1.5 1.5 1.5

eNVM and MSS/HPMS PLL =

OFF during F*F and both are

turned back on at exit

Exit time with

respect to the

fabric buffer

output

TFF_EXIT 21 15 21 μs eNVM and MSS/HPMS PLL =

ON during F*F

65 55 65

μs

eNVM and MSS/HPMS PLL =

OFF during F*F and both are

turned back on at exit

Table 294 • DDR Memory Interface Characteristics

Standard

Supported Data Rate

UnitMin Max

DDR3 667 667 Mbps

DDR2 667 667 Mbps

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Proprietary and Confidential DS0128 Datasheet Revision 12.0 120

2.3.29 SFP Transceiver Characteristics

IGLOO2 and SmartFusion2 SerDes complies with small form-factor pluggable (SFP) requirements as

specified in SFP INF-80741. The following table provides the electrical characteristics.

The following table lists the SFP transceiver electrical characteristics in worst-case industrial conditions

when TJ = 100 °C, VDD = 1.14 V.

2.3.30 SerDes Electrical and Timing AC and DC Characteristics

PCIe is a high-speed, packet-based, point-to-point, low-pin-count, serial interconnect bus. The IGLOO2

and SmartFusion2 SoC FPGAs has up to four hard high-speed serial interface blocks. Each SerDes

block contains a PCIe system block. The PCIe system is connected to the SerDes block.

The following table lists the transmitter parameters in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V.

LPDDR 50 400 Mbps

Table 295 • SFP Transceiver Electrical Characteristics

Pin Direction

Differential Peak-Peak Voltage

UnitMin Max

RD+/-1

1. Based on default SerDes transmitter settings for PCIe Gen1. Lower amplitudes are

available through programming changes to TX_AMP setting.

Output 1600 2400 mV

TD+/-2

2. Based on Input Voltage Common-Mode (VICM) = 0 V. Requires AC Coupling.

Input 350 2400 mV

Table 296 • Transmitter Parameters

Symbol Description Min Max Unit

VTX-DIFF-PP Differential swing (2.5 Gbps, 5.0 Gbps) 0.8 1.2 V

VTX-CM-AC-P Output common mode voltage (2.5 Gbps) 20 mV

VTX-CM-AC-PP Output common mode voltage (5.0 Gbps) 100 mV

VTX-RISE-FALL Rise and fall time (20% to 80%, 2.5 Gbps) 0.125 UI

Rise and fall time (20% to 80%, 5.0 Gbps) 0.15 UI

ZTX-DIFF-DC Output impedance–differential 80 120 

LTX-SKEW Lane-to-lane TX skew within a SerDes block (2.5

Gbps)

500 ps + 2 UI ps

Lane-to-lane TX skew within a SerDes block (5.0

Gbps)

500 ps + 4 UI ps

RLTX-DIFF Return loss differential mode (2.5 Gbps) –10 dB

Return loss differential mode (5.0 Gbps)

0.05 GHz to 1.25 GHz

–10 dB

1.25 GHz to 2.5 GHz –8 dB

RLTX-CM Return loss common mode (2.5 Gbps, 5.0 Gbps) –6 dB

TX-LOCK-RST Transmit PLL lock time from reset 10 µs

Table 294 • DDR Memory Interface Characteristics

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The following table lists the receiver pa in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V.

VTX-AMP 100 mV setting 90 150 mV

400 mV setting 320 480 mV

800 mV setting 660 940 mV

1200 mV setting 950 1400 mV

Table 297 • Receiver Parameters

Symbol Description Min Typ Max Unit

VRX-IN-PP-CC Differential input peak-to-peak sensitivity

(2.5 Gbps)

0.238 1.2 V

Differential input peak-to-peak sensitivity

(2.5 Gbps, de-emphasized)

0.219 1.2 V

Differential input peak-to-peak sensitivity

(5.0 Gbps)

0.300 1.2 V

Differential input peak-to-peak sensitivity

(5.0 Gbps, de-emphasized)

0.300 1.2 V

VRX-CM-AC-P Input common mode range (AC coupled) 150 mV

ZRX-DIFF-DC Differential input termination 80 100 120 

REXT External calibration resistor 1,188 1,200 1,212 

CDR-LOCK-RST CDR relock time from reset 15 µs

RLRX-DIFF Return loss differential mode (2.5 Gbps) –10 dB

Return loss differential mode (5.0 Gbps)

0.05 GHz to 1.25 GHz –10 dB

1.25 GHz to 2.5 GHz –8 dB

RLRX-CM Return loss common mode (2.5 Gbps,

5.0 Gbps)

–6 dB

RX-CID1

1. AC-coupled, BER = e-12.

CID limit (set by 8B/10B coding, not the

receiver PLL)

200 UI

VRX-IDLE-DET-DIFF-PP Signal detect limit 65 175 mV

Table 298 • SerDes Protocol Compliance

Protocol Maximum Data Rate (Gbps) –1 –Std

PCIe Gen 1 2.5 Yes Yes

PCIe Gen 2 5.0 Yes

XAUI 3.125 Yes

Generic EPCS 3.2 Yes

Generic EPCS 2.5 Yes Yes

Table 296 • Transmitter Parameters (continued)

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The following table lists the SerDes reference clock AC specifications in worst-case industrial conditions

when TJ = 100 °C, VDD = 1.14 V.

2.3.31 SmartFusion2 Specifications

2.3.31.1 MSS Clock Frequency

The following table lists the maximum frequency for MSS main clock in worst-case industrial conditions

when TJ = 100 °C, VDD = 1.14 V.

Table 299 • SerDes Reference Clock AC Specifications

Parameter Symbol Min Max Unit

Reference clock frequency FREFCLK 100 160 MHz

Reference clock rise time TRISE 0.6 4 V/ns

Reference clock fall time TFALL 0.6 4 V/ns

Reference clock duty cycle TCYC 40 60 %

Reference clock mismatch MMREFCLK –300 300 ppm

Reference spread spectrum clock SSCref 0 5000 ppm

Table 300 • HCSL Minimum and Maximum DC Input Levels (Applicable to SerDes REFCLK Only)

Parameter Symbol Min Typ Max Unit

Recommended DC Operating Conditions

Supply voltage VDDI 2.375 2.5 2.625 V

HCSL DC Input Voltage Specification

DC Input voltage VI02.625V

HCSL Differential Voltage Specification

Input common mode voltage VICM 0.05 2.4 V

Input differential voltage VIDIFF 100 1100 mV

Table 301 • HCSL Minimum and Maximum AC Switching Speeds (Applicable to SerDes REFCLK

Only)

Parameter Symbol Min Typ Max Unit

HCSL AC Specifications

Maximum data rate (for MSIO I/O bank) FMAX 350 Mbps

HCSL Impedance Specifications

Termination resistance Rt 100 

Table 302 • Maximum Frequency for MSS Main Clock

Symbol Description –1 –Std Unit

M3_CLK Maximum frequency for the MSS main clock 166 142 MHz

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2.3.31.2 SmartFusion2 Inter-Integrated Circuit (I2C) Characteristics

This section describes the DC and switching of the IC interface. Unless otherwise noted, all output

characteristics given are for a 100 pF load on the pins. For timing parameter definitions, see Figure 21,

page 124.

The following table lists the I2C characteristics in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V

Table 303 • I2C Characteristics

Parameter Symbol Min Typ Max Unit Conditions

Input low voltage VIL –0.3 0.8 V See Single-Ended I/O Standards,

page 25 for more information. I/O

standard used for illustration: MSIO

bank–LVTTL 8 mA low drive.

Input high voltage VIH 23.45VSee Single-Ended I/O Standards,

page 25 for more information. I/O

standard used for illustration: MSIO

bank–LVTTL 8 mA low drive.

Hysteresis of schmitt

triggered inputs for VDDI >

VHYS 0.05 × VDDI V See Table 28, page 24 for more

information.

Input current high IIL 10 µA See Single-Ended I/O Standards,

page 25 for more information.

Input current low IIH 10 µA See Single-Ended I/O Standards,

page 25 for more information.

Input rise time Tir 1000 ns Standard mode

300 ns Fast mode

Input fall time Tif 300 ns Standard mode

300 ns Fast mode

Maximum output voltage

low (open drain) at 3 mA

sink current for VDDI > 2 V

VOL 0.4 V See Single-Ended I/O Standards,

page 25 for more information. I/O

standard used for illustration: MSIO

bank–LVTTL 8 mA low drive.

Pin capacitance Cin 10 pF VIN = 0, f = 1.0 MHz

Output fall time from

VIHMin to VILMax1

tOF121.04 ns VIHmin to VILMax, CLOAD = 400 pF

5.556 ns VIHmin to VILMax, CLOAD = 100 pF

Output rise time from

VILMax to VIHMin1

tOR 119.887 ns VILMax to VIHmin, CLOAD = 400 pF

5.218 ns VILMax to VIHmin, CLOAD = 100 pF

Output buffer maximum

pull-down resistance2, 3

Rpull-up2,3 50 

Output buffer maximum

pull-up resistance2, 4

Rpull-down2,4 131.25 

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The following table lists the I2C switching characteristics in worst-case industrial conditions when

TJ = 100 °C, VDD = 1.14 V

Figure 21 • I2C Timing Parameter Definition

Maximum data rate DMAX 400 Kbps Fast mode

100 Kbps Standard mode

Pulse width of spikes

which must be

suppressed by the input

filter

TFILT 50 ns Fast mode

1. These values are provided for MSIO Bank–LVTTL 8 mA Low Drive at 25 °C, typical conditions. For board design considerations

and detailed output buffer resistances, use the corresponding IBIS models located on the SoC Products Group website:

http://www.microsemi.com/soc/download/ibis/default.aspx.

2. These maximum values are provided for information only. Minimum output buffer resistance values depend on VDDIx, drive

strength selection, temperature, and process. For board design considerations and detailed output buffer resistances, use the

corresponding IBIS models located on the SoC Products Group website:

http://www.microsemi.com/soc/download/ibis/default.aspx.

3. R(PULL-DOWN-MAX) = (VOLspec)/IOLspec.

4. R(PULL-UP-MAX) = (VDDImax–VOHspec)/IOHspec.

Table 304 • I2C Switching Characteristics

Parameter Symbol

–1 Std

UnitMin Min

Low period of I2C_x_SCL TLOW 1 1 PCLK cycles

High period of I2C_x_SCL THIGH 1 1 PCLK cycles

START hold time THD;STA 1 1 PCLK cycles

START setup time TSU;STA 1 1 PCLK cycles

DATA hold time THD;DAT 1 1 PCLK cycles

DATA setup time TSU;DAT 1 1 PCLK cycles

STOP setup time TSU;STO 1 1 PCLK cycles

Table 303 • I2C Characteristics (continued)

Parameter Symbol Min Typ Max Unit Conditions

SCL

TRISE TFALL

tLOW

tHD;STA

SDA

tHIGH

tHD;DAT tSU;DAT

tSU;STO

tSU;STA S

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2.3.31.3 Serial Peripheral Interface (SPI) Characteristics

This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output

characteristics given are for a 35 pF load on the pins and all sequential timing characteristics are related

to SPI_x_CLK. For timing parameter definitions, see Figure 22, page 127.

The following table lists the SPI characteristics in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V

Table 305 • SPI Characteristics for All Devices

Symbol Description Min Typ Max Unit Conditions

SPIFMAX Maximum operating frequency

of SPI interface

20 MHz

sp1 SPI_[0|1]_CLK minimum period

SPI_[0|1]_CLK = PCLK/2 12 ns

SPI_[0|1]_CLK = PCLK/4 24.1 ns

SPI_[0|1]_CLK = PCLK/8 48.2 ns

SPI_[0|1]_CLK = PCLK/16 0.1 µs

SPI_[0|1]_CLK = PCLK/32 0.19 µs

SPI_[0|1]_CLK = PCLK/64 0.39 µs

SPI_[0|1]_CLK = PCLK/128 0.77 µs

sp2 SPI_[0|1]_CLK minimum pulse width high

SPI_[0|1]_CLK = PCLK/2 6 ns

SPI_[0|1]_CLK = PCLK/4 12.05 ns

SPI_[0|1]_CLK = PCLK/8 24.1 ns

SPI_[0|1]_CLK = PCLK/16 0.05 µs

SPI_[0|1]_CLK = PCLK/32 0.095 µs

SPI_[0|1]_CLK = PCLK/64 0.195 µs

SPI_[0|1]_CLK = PCLK/128 0.385 µs

sp3 SPI_[0|1]_CLK minimum pulse width low

SPI_[0|1]_CLK = PCLK/2 6 ns

SPI_[0|1]_CLK = PCLK/4 12.05 ns

SPI_[0|1]_CLK = PCLK/8 24.1 ns

SPI_[0|1]_CLK = PCLK/16 0.05 µs

SPI_[0|1]_CLK = PCLK/32 0.095 µs

SPI_[0|1]_CLK = PCLK/64 0.195 µs

SPI_[0|1]_CLK = PCLK/128 0.385 µs

sp4 SPI_[0|1]_CLK, SPI_[0|1]_DO,

SPI_[0|1]_SS rise time (10%–

90%)1

2.77 ns I/O Configuration:

LVCMOS 2.5 V–

8mA

AC loading: 35 pF

Test conditions:

Typical voltage,

25 °C

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sp5 SPI_[0|1]_CLK, SPI_[0|1]_DO,

SPI_[0|1]_SS fall time (10%–

90%)1

2.906 ns IO Configuration:

LVCMOS 2.5 V-8 mA

AC Loading: 35 pF

Test Conditions:

Typical Voltage,

25 °C

SPI master configuration (applicable for 005, 010, 025, and 050 devices)

sp6m SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) – 8.0 ns

sp7m SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) – 2.5 ns

sp8m SPI_[0|1]_DI setup time212 ns

sp9m SPI_[0|1]_DI hold time22.5 ns

SPI slave configuration (applicable for 005, 010, 025, and 050 devices)

sp6s SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) –

17.0

sp7s SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) + 3.0 ns

sp8s SPI_[0|1]_DI setup time22ns

sp9s SPI_[0|1]_DI hold time27ns

SPI master configuration (applicable for 060, 090, and 150 devices)

sp6m SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) – 7.0 ns

sp7m SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) – 9.5 ns

sp8m SPI_[0|1]_DI setup time215 ns

sp9m SPI_[0|1]_DI hold time2-–2.5 ns

SPI slave configuration (applicable for 060, 090, and 150 devices)

sp6s SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) –

16.0

sp7s SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) - 3.5 ns

sp8s SPI_[0|1]_DI setup time23ns

sp9s SPI_[0|1]_DI hold time22.5 ns

1. For specific Rise/Fall Times board design considerations and detailed output buffer resistances, use the corresponding IBIS

models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx.

2. For allowable pclk configurations, see Serial Peripheral Interface Controller section in the UG0331: SmartFusion2 Microcontroller

Subsystem User Guide.

Table 305 • SPI Characteristics for All Devices (continued)

Symbol Description Min Typ Max Unit Conditions

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Figure 22 • SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1)

2.3.32 CAN Controller Characteristics

The following table lists the CAN controller characteristics in worst-case industrial conditions when TJ =

100 °C, VDD = 1.14 V.

2.3.33 USB Characteristics

The following table lists the USB characteristics in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V.

Table 306 • CAN Controller Characteristics

Parameter Description –1 –Std Unit

FCANREFCLK1

1. PCLK to CAN controller must be a multiple of 8 MHz.

Internally sourced CAN reference

clock frequency

160 136 MHz

BAUDCANMAX Maximum CAN performance baud

rate

11Mbps

BAUDCANMIN Minimum CAN performance baud

rate

0.05 0.05 Mbps

Table 307 • USB Characteristics

Parameter Description –1 –Std Unit

FUSBREFCLK Internally sourced USB reference clock

frequency

166 142 MHz

TUSBCLK USB clock period 16.66 16.66 ns

TUSBPD Clock to USB data propagation delay 9.0 9.0 ns

TUSBSU Setup time for USB data 6.0 6.0 ns

TUSBHD Hold time for USB data 0 0 ns

SPI_0_CLK

SPO = 0

SPI_0_DO

SP6 SP7

50%50% MSB

50% 50% 50%

SP2

SP1

90%

10% 10%

SP4 SP5

SP8 SP9

50%

50% MSB

SPI_0_DI

10%

90%

SP5

90%

10%

SP4

90%

10%10%

SP4SP5

90%

SPI_0_SS

SPI_0_CLK

SPO = 1

SP3

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2.3.34 MMUART Characteristics

The following table lists the MMUART characteristics in worst-case industrial conditions when

TJ = 100 °C, VDD = 1.14 V.

2.3.35 IGLOO2 Specifications

2.3.35.1 HPMS Clock Frequency

The following table lists the maximum frequency for HPMS main clock in worst-case industrial conditions

when TJ = 100 °C, VDD = 1.14 V.

2.3.35.2 IGLOO2 Serial Peripheral Interface (SPI) Characteristics

This section describes the DC and switching of the SPI interface. Unless otherwise noted, all output

characteristics given are for a 35 pF load on the pins and all sequential timing characteristics are related

to SPI_0_CLK. For timing parameter definitions, see Figure 23, page 130.

The following table lists the SPI characteristics in worst-case industrial conditions when TJ = 100 °C,

VDD = 1.14 V.

Table 308 • MMUART Characteristics

Parameter Description –1 –Std Unit

FMMUART_REF_CLK Internally sourced MMUART

reference clock frequency.

166 142 MHz

BAUDMMUARTTx Maximum transmit baud rate 10.375 8.875 Mbps

BAUDMMUARTRx Maximum receive baud rate 10.375 8.875 Mbps

Table 309 • Maximum Frequency for HPMS Main Clock

Symbol Description –1 –Std Unit

HPMS_CLK Maximum frequency for the HPMS main clock 166 142 MHz

Table 310 • SPI Characteristics for All Devices

Symbol Description Min Typ Max Unit Conditions

SPIFMAX Maximum operating

frequency of SPI interface

20 MHz

sp1 SPI_[0|1]_CLK minimum period

SPI_[0|1]_CLK = PCLK/2 12 ns

SPI_[0|1]_CLK = PCLK/4 24.1 ns

SPI_[0|1]_CLK = PCLK/8 48.2 ns

SPI_[0|1]_CLK = PCLK/16 0.1 µs

SPI_[0|1]_CLK = PCLK/32 0.19 µs

SPI_[0|1]_CLK = PCLK/64 0.39 µs

SPI_[0|1]_CLK = PCLK/128 0.77 µs

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sp2 SPI_[0|1]_CLK minimum pulse width high

SPI_[0|1]_CLK = PCLK/2 6 ns

SPI_[0|1]_CLK = PCLK/4 12.05 ns

SPI_[0|1]_CLK = PCLK/8 24.1 ns

SPI_[0|1]_CLK = PCLK/16 0.05 µs

SPI_[0|1]_CLK = PCLK/32 0.095 µs

SPI_[0|1]_CLK = PCLK/64 0.195 µs

SPI_[0|1]_CLK = PCLK/128 0.385 µs

sp3 SPI_[0|1]_CLK minimum pulse width low

SPI_[0|1]_CLK = PCLK/2 6 ns

SPI_[0|1]_CLK = PCLK/4 12.05 ns

SPI_[0|1]_CLK = PCLK/8 24.1 ns

SPI_[0|1]_CLK = PCLK/16 0.05 µs

SPI_[0|1]_CLK = PCLK/32 0.095 µs

SPI_[0|1]_CLK = PCLK/64 0.195 µs

SPI_[0|1]_CLK = PCLK/128 0.385 µs

sp4 SPI_[0|1]_CLK,

SPI_[0|1]_DO, SPI_[0|1]_SS

rise time (10%–90%)1

2.77 ns I/O Configuration:

LVCMOS 2.5 V -

8 mA

AC loading: 35 pF

test conditions:

Typical voltage,

25 °C

sp5 SPI_[0|1]_CLK,

SPI_[0|1]_DO, SPI_[0|1]_SS

fall time (10%–90%)1

2.906 ns I/O Configuration:

LVCMOS 2.5 V -

8 mA

AC loading: 35 pF

test conditions:

Typical voltage,

25 °C

SPI master configuration (applicable for 005, 010, 025, and 050 devices)

sp6m SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) – 8.0 ns

sp7m SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) – 2.5 ns

sp8m SPI_[0|1]_DI setup time212 ns

sp9m SPI_[0|1]_DI hold time22.5 ns

SPI slave configuration (applicable for 005, 010, 025, and 050 devices)

sp6s SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) – 17.0 ns

sp7s SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) + 3.0 ns

sp8s SPI_[0|1]_DI setup time22ns

sp9s SPI_[0|1]_DI hold time27ns

Table 310 • SPI Characteristics for All Devices (continued)

Symbol Description Min Typ Max Unit Conditions

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Figure 23 • SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1)

SPI master configuration (applicable for 060, 090, and 150 devices)

sp6m SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) – 7.0 ns

sp7m SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) – 9.5 ns

sp8m SPI_[0|1]_DI setup time215 ns

sp9m SPI_[0|1]_DI hold time2–2.5 ns

SPI slave configuration (applicable for 060, 090, and 150 devices)

sp6s SPI_[0|1]_DO setup time2(SPI_x_CLK_period/2) – 16.0 ns

sp7s SPI_[0|1]_DO hold time2(SPI_x_CLK_period/2) - 3.5 ns

sp8s SPI_[0|1]_DI setup time23ns

sp9s SPI_[0|1]_DI hold time22.5 ns

1. For specific Rise/Fall Times board design considerations and detailed output buffer resistances, use the corresponding IBIS

models located on the Microsemi SoC Products Group website: http://www.microsemi.com/soc/download/ibis/default.aspx.

2. For allowable pclk configurations, see the Serial Peripheral Interface Controller section in the UG0331: SmartFusion2

Microcontroller Subsystem User Guide.

Table 310 • SPI Characteristics for All Devices (continued)

Symbol Description Min Typ Max Unit Conditions

SPI_0_CLK

SPO = 0

SPI_0_DO

SP6 SP7

50%50% MSB

50% 50% 50%

SP2

SP1

90%

10% 10%

SP4 SP5

SP8 SP9

50%

50% MSB

SPI_0_DI

10%

90%

SP5

90%

10%

SP4

90%

10%10%

SP4SP5

90%

SPI_0_SS

SPI_0_CLK

SPO = 1

SP3