APTGT100SK170D1 – Rev 0 January, 2004
APT website – http://www.advancedpower.com
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 4mA
1700
V
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1700V 3 mA
T
j
= 25°C 2.0 2.4
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 100A T
j
= 125°C 2.4 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 4 mA 5.2 5.8 6.4 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 200 nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 8.5
C
res
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1MHz 0.3 nF
T
d(on)
Turn-on Delay Time 250
T
r
Rise Time 100
T
d(off)
Turn-off Delay Time 850
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15Ω 120
ns
T
d(on)
Turn-on Delay Time 300
T
r
Rise Time 100
T
d(off)
Turn-off Delay Time 1000
T
f
Fall Time 200
ns
E
off
Turn Off Energy
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 900V
I
C
= 100A
R
G
= 15Ω
32 mJ
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.8 2.2
V
F
Diode Forward Voltage I
F
= 100A
V
GE
= 0V T
j
= 125°C 1.9 V
T
j
= 25°C 12
E
r
Reverse Recovery Energy I
F
= 100A
V
R
= 900V
di/dt =900A/µs T
j
= 125°C 25 mJ
T
j
= 25°C 25
Q
rr
Reverse Recovery Charge I
F
= 100A
V
R
= 900V
di/dt =900A/µs
T
j
= 125°C 43 µC
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 0.18
R
thJC
Junction to Case Diode 0.3 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 3500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
For terminals M5 2 3.5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 180 g