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MS2322
DESCRIPTION:DESCRIPTION:
The MS2322 is a gold metallized, silicon NPN power transistor
designed for pulsed applications with low duty cycles such as
IFF, DME and TACAN. Internal impedance matching is utilized
for maximum broadband performance and simplified external
matching.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 1.5 A
87.5
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C)
Thermal Resistance Junction-case
2.0 °°C/W
FeaturesFeatures
• 1025 - 1150 MHz
• 50 VOLT OPERATION
• POUT = 15 WATTS
• GP = 10 dB MINIMUM
• 20:1 VSWR CAPABILITY @ RATED CONDITIONS
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
.280 4LSL (M115)
Epoxy Sealed
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855