BAT2402ELSE6327XTSA1 - INFINEON TECHNOLOGIES AG

Product Brief

RF Schottky diodes

As high frequency detectors, mixer and power detector

Infineon RF Schottky diodes are silicon low barrier N-type devices and, unlike other solu-

tions available in the market, they come with various junction diode configurations

(e. g. common anode, common cathode) and can be used in sensitive power detectors,

in sampling or in mixer circuits.

Their low barrier height and very small forward voltage, along with low junction capaci-

tance, make this series of devices an excellent choice for power detection and mixer

functions at frequencies as high as 24 GHz.

All Infineon RF Schottky diodes are qualified according to AEC-Q101 and are recom-

mended to be designed in automotive applications.

› Low leakage current

(low forward resistance)

› Low signal distortion level

› High eiciency/low loss

› Low power consumption

› Guard-ring protection on chip

› Fast switching

› Tailored for low/medium power

detection circuits

› Higher linearity and power handling

capability compared to integrated

mixers

› Flexibility in circuit design with focus

on required parameters

› Easy adaptability to dierent

applications and frequencies

› Easy detector/mixer design due to

wide linear dynamic range

Key features

Technical benefits

Customer benefits

www.infineon.com/rfdiodes

Target applications

› Power detection in wireless LAN and WiFi routers

› Power detection in mobile devices

› Power detection in wireless applications in ISM bands

› Mixer in 24GHz passive radar system

› Mixer in C- and Ku- band LNB receiver

Product Brief

RF Schottky diodes

As high frequency detectors, mixer and power detector

Schottky diodes – product portfolio

Published by

Infineon Technologies AG

81726 Munich, Germany

Order Number: B132-I0322-V1-7600-EU-EC-P

Date: 09 / 2016

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application of our products, delivery terms and conditions

and/or prices, please contact your nearest Infineon Technologies

oice (www.infineon.com).

Warnings

Due to technical requirements, our products may contain

dangerous substances. For information on the types in question,

please contact your nearest Infineon Technologies oice.

Except as otherwise explicitly approved by us in a written

document signed by authorized representatives of Infineon

Technologies, our products may not be used in any life-

endangering applications, including but not limited to medical,

nuclear, military, life-critical or any other applications where a

failure of the product or any consequences of the use thereof

can result in personal injury.

Application example: Schottky diode as double-balanced mixer for 24GHz passive radar

LNA Balun Balun

RF LO

Buer

amplifier VCO

Double-balanced

mixer

Product type VR (max)

[V]

IF (max)

[mA]

[pF]

VF at 1 mA

[mV]

Package

BAT15-02EL/-02ELS 4 110 0.26 230 TSLP-2/TSSLP-2

BAT15-03W 4 110 0.26 230 SOD323

BAT15-04W D 4 110 0.26 230 SOT323

BAT15-05W D 4 110 0.26 230 SOT323

BAT15-04R D 4 110 0.26 230 SOT23

BAT15-099/-099LRH1) D 4 110 0.26 230 SOT143/TSLP-4

BAT15-099R Q 4 110 0.38 230 SOT143

BAT17 4 130 0.55 340 SOT23

BAT17-04/W D 4 130 0.55 340 SOT23/SOT323

BAT17-05 D 4 130 0.55 340 SOT23

BAT17-05W D 4 130 0.55 340 SOT323

BAT17-06W D 4 130 0.55 340 SOT323

BAT17-07 D 4 130 0.75 340 SOT143

BAT24-02LS 4 110 0.21 230 TSSLP-2ww

BAT62 40 20 0.35 440 SOT143

BAT62-02L/-02LS 40 120 0.35 440 TSLP-2/TSSLP-2

BAT62-02V/-03W 40 20 0.35 440 SC79/SOD323

BAT62-07L4 D 40 20 0.35 440 TSLP-4

BAT62-07W D 40 20 0.35 440 SOT343

BAT63-02V 3 100 0.65 190 SC79

BAT63-07W D 3 100 0.65 190 SOT343

BAT68 8 130 0.75 318 SOT23

BAT68-04/W D 8 130 0.75 318 SOT23/SOT323

BAT68-06/W D 8 130 0.75 318 SOT23/SOT323

1) Not recommended for new designs D = Double configuration

Q = Quad configuration