SIM-20ST
Sensors
Rev.A 1/2
Infrared light emitting diode, side-view type
SIM-012SB
The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector . High output with φ1.85 lens.
zA pplications
Light source for sensors
zFeatures
1) Compact package (4.4x4.3 mm) with lens.
2) High efficiency , high output PO = 7mW (IF = 50 mA).
3) Emission spectrum well suited to silicon detectors
(λP = 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliab ility.
zDimensions (Unit : mm)
14Min.
(2.54)
2.0
0.5
0.45
1.5±0.1 0.5Max.
4.4±0.1
0.5Max.
1.5
4.3±0.1
3.9
±
0.1
3.2
±
0.1
Gate remainder
Resin coating
Notes:
1. Tolerances are ±0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
1Cathode 2Anode
0.4
2°±1°
0.4
0.53
4°±1°
zA bsolute maximum ratings (Ta=25°C)
zElectrical and optical characteristics (Ta=25°C)
Parameter Symbol
IE
VF
IR
λP
∆λ
θ1/2
trtf
Min.
Typ.
7.5
1.3
950
40
±15
1.0
Max.
1.6
10
Unit
IF50mA
IF50mA
VR3V
IF50mA
IF50mA
IF50mA
IF50mA
mW/sr
V
µA
nm
nm
deg
µs
fc 1.0 IF50mA
MHz
Conditions
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Parameter Symbol
PD
IF
IFP
VR
Topr
Tstg
Limits
25 to +85
30 to +100
50
5
80
0.5
Unit
mA
V
mW
A
°C
°C
Pulse width = 0.1 ms, duty ratio 1%
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
SIM-20ST
Sensors
Rev.A 2/2
zElectrical and optical characteristic curves
FORWARD CURRENT : I
F
(
mA)
AMBIENT TEMPERATURE : Ta (
°C)
20 0 40 60 8020 100
0
20
10
30
40
50
Fig.1 Forward current falloff
012
0
20
40
10
30
50
FORWARD VOLTAGE : V
F
(V)
FORWARD CURRENT : I
F
(mA)
Fig.2 Forward current vs. forward voltage
75
°C
50
°C
25
°C
0
°C
25
°C
EMITTING STRENGTH I : I
E
(mW / Sr)
FORWARD CURRENT : I
F
(mA)
0 1020304050
0
10
2
4
6
8
Fig.3 Emitting strength vs.
forward current
RELATIVE EMITTING I : IE (%)
AMBIENT TEMPERATURE : Ta (°C)
025 25 10050 75
10
20
50
100
200
Fig. 4 Relative emitting strength vs.
ambient temperature
RELATIVE OPTICAL OUTPUT : PO (%)
OPTICAL WAVELENGTH : λ (nm)
900 920 940 960 980 1000
0
20
40
60
80
100
Fig.5 Wavelength
0
20
0
40
60
80
100
10°20°80 60 40 20100 30°40°50°60°70°80°90°
10°0°
20°
30°
40°
50°
60°
70°
80°
90°
RELATIVE EMITTING STRENGTH (%)
RELATIVE EMITTING STRENGTH (%) ANGULAR DISPLACEMENT : θ (
deg)
Fig. 6 Directional pattern
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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About Export Control Order in Japan
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