Three Phase Rectifier Bridges PSD 95 IdAVM VRRM = 140 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 95/08 PSD 95/12 PSD 95/14 PSD 95/16 PSD 95/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 85C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 140 1200 1350 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1040 1120 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7200 9110 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5400 6270 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 5 5 220 Nm Nm g i2 dt TVJ TVJM Tstg VISOL Md Weight 50/60 HZ, RMS IISOL 1 mA Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque typ. (M5) (M5) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM 0.3 6.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM 1.5 0.8 5.0 V V m per diode; DC current per module 0.9 0.15 K/W K/W RthJK per diode; DC current per module 1.1 0.183 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 8.0 4.5 50 mm mm m/s2 TVJ = 25C TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/ PSD 95 10 IF(OV) -----IFSM 200 IFSM (A) TVJ=45C TVJ=150C A 1.6 160 T=150C 1200 4 2 As 1040 TVJ=45C 1.4 120 TVJ=150C 1.2 1 80 0 VRRM 0.8 1/2 VRRM 40 T=25C IF 0.6 1 VRRM 10 0.4 0 VF 1 0 1.5 V Fig. 1 Forward current versus voltage drop per diode 500 [W] 1 10 10 2 3 t[ms] 10 3 1 2 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 75 TC PSD 95 0.1 0.05 80 = RTHCA [K/W] 85 0.15 400 90 150 DC [A] sin.180 rec.120 95 100 0.25 300 105 rec.60 rec.30 100 110 115 0.45 200 125 DC sin.180 rec.120 rec.60 rec.30 100 PVTOT 0 120 1.05 135 140 IdAV 145 0 C 150 25 IFAVM 75 50 130 125 0 [A] Tamb 50 100 [K] 150 50 100 150 200 T (C) C Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current temperature at case temperature K/W 1.2 Z thJK 1 Z thJC 0.8 0.6 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2005 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/