MSTC40 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 40Amp Applications y y y y Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 y y y 5 4 y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Module Type TYPE VRRM VRSM MSTC40-08 MSTC40-12 MSTC40-16 800V 1200V 1600V 900V 1300V 1700V Maximum Ratings Symbol Conditions Values Units ITAV Sine 180o;Tc=85 40 A ITSM TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 1000 850 A i2t TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 5000 3600 A2s Visol a.c.50HZ;r.m.s.;1min 3000 V -40 to 125 -40 to 125 Tvj Tstg Mt To terminals(M5) 315% Nm Ms To heatsink(M6) 515% Nm di/dt TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt TJ= TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Weight Module(Approximately) 100 g Symbol Conditions Values Units Rth(j-c) Rth(c-s) Cont.;per thyristor / per module per thyristor / per module 0.65/0.33 0.2/0.1 /W /W Thermal Characteristics MSTC40 - Rev 0 Oct, 2011 www.microsemi.com 1/4 MSTC40 Electrical Characteristics Values Typ. Symbol Conditions VTM T=25 ITM =200A TVJ =TVJM ,VR=VRRM ,VD=VDRM 1.95 V 15 mA VTO rT For power-loss calculations only (TVJ =125) TVJ =TVJM 1.0 4.5 V m VGT TVJ =25 , VD =6V 2.5 V IGT TVJ =25 , VD =6V 150 mA VGD TVJ =125 , VD =2/3VDRM 0.25 V IGD TVJ =125 , VD =2/3VDRM 6 mA IL IH TVJ =25 , RG = 33 TVJ =25 , VD =6V 300 150 600 250 tgd TVJ =25, IG=1A, diG/dt=1A/us TVJ =TVJM 1 mA mA us 80 us IRRM/IDRM tq MSTC40 - Rev 0 Oct, 2011 Min. Max. Units www.microsemi.com 2/4 MSTC40 Performance Curves 60 100 DC A W 75 rec.120 sin.180 48 DC sin.180 rec.60 36 rec.120 rec.30 50 rec.60 24 rec.30 25 12 PTAV ITAVM 0 0 ITAV 10 20 30 40 50 A 60 0 0 Tc Fig1. Power dissipation 50 100 130 Fig2.Forward Current Derating Curve 1000 1.0 50HZ A / W Zth(j-S) Zth(j-C) 0.5 0 500 0.001 t 0.01 0.1 1 10 S 100 0 Fig3. Transient thermal impedance 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 250 A 10 Typ. 200 125 150 max. 100 25 25 IT 0 0 VTM 0.5 1.0 1.5 2.0 V 2.5 Fig5. Forward Characteristics MSTC40 - Rev 0 Oct, 2011 www.microsemi.com 3/4 MSTC40 100 1/2*MSCT40 V 20V;20 10 VGT 1 PG(tp) -40 Tvj 25 125 VG VGD125 IGT IGD125 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: T1 x Dimensions in mm MSTC40 - Rev 0 Oct, 2011 www.microsemi.com 4/4