■Features
●Repetitive peak off-state voltage: VDRM=200, 400, 600V
●Average on-state current: IT(AV)=8A
●Gate trigger current: IGT=15mA max
●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)
●UL approved type available
■Absolute Maximum Ratings
■Electrical Characteristics
Parameter Symbol Ratings Unit Conditions
V
Tj= –40 to +125°C, R
GK
=1kΩ
50Hz Half-cycle sinewave, Continuous current, Tc=87°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
200
TF821S TF841S TF861S
600
200 600
300 700
300 700
400
V
V
V
A
A
A
A
V
V
W
W
°C
°C
V
DRM
V
RRM
V
DSM
V
RSM
I
T(AV)
I
T(RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G(AV)
Tj
Tstg
400
500
500
8.0
12.6
120
2.0
10
5.0
5.0
0.5
–40 to +125
–40 to +125
V
V
ISO
1500
V
V
mA
V
mA
V/µS
µS
°C/W
Parameter Symbol Ratings
typmin max
Unit Conditions
mA
mA
I
DRM
V
TM
I
GT
tq
I
RRM
V
GT
V
GD
I
H
dv/dt
Rth
5.0
4.0
50
30
3.6
0.1
1.4
1.5
15
2.0
2.0 Tj=125
°C,
V
D
=V
DRM
(V
RRM
), R
GK
=1kΩ
T
C
=25
°C,
I
TM
=15A
V
D
=6V, R
L
=10Ω, T
C
=25
°C
R
GK
=1kΩ, Tj=25
°C
Junction to case
Tc=25
°C
V
D
=
1/2
×
V
DRM
, Tj
=
125
°C,
R
GK
=
1kΩ, C
GK
=
0.033µF
V
D
=1/2 ×V
DRM
, Tj=125
°C,
R
GK
=1kΩ
16
16.9±0.3
8.4±0.2
0.8±0.2
3.9±0.2 4.0±0.2
10.0±0.2 4.2±0.2
1.35±0.15
1.35±0.15
2.4±0.2
2.2±0.2
φ3.3±0.2
0.85+0.2
–0.1
+0.2
–0.1
C 0.5
2.8
13.0 min
2.54
2.54 0.45
TF821S, TF841S, TF861S
TO-220F 8A Thyristor
Weight: Approx. 2.1g
External Dimensions
(Unit: mm)
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
f 50Hz
f 50Hz, duty 10%
f 50Hz, duty 10%
a
b
0.8
5
1
10
100
50
1.0 2.0 3.0
On-state voltage vT (V)
On-state current iT (A)
v
T–
i
T Characteristics (max)
20
40
60
80
100
120
140
Number of cycle
Surge on-state current ITSM (A)
ITSM Ratings
1 5 10 50 100
50Hz
Gate current iGF (A)
0123
0
2
4
6
8
10
12
14
Gate voltage vGF (V)
Gate Characteristics
P
GM
=5W
Gate trigger current I
GT
(mA)
Gate trigger voltage V
GT
(V)
0
0
1
2
10 20 30
0
0
4
8
12
20
16
51015
Average on-state current IT(AV) (A)
IT(AV) –P
T(AV) Characteristics
60°90°120°
180°
DC
θ=30°
0
0
25
50
100
75
150
125
51510
Average on-state current IT(AV) (A)
IT(AV) – Tc Ratings
60°
90°
120°
180°
DC
θ=30°
75°C
125°C
25°C
75°C
125°C
–40 0 50 75 10025 125
10
3
5
50
100
–40 0 50 75 10025 125
1
3
5
30
10
50
–40 0 50 75 10025 125
0
1.0
0.8
0.6
0.4
0.2
11010
2103104105
0.1
1
10
0.5 1 10 100 1000
0.5
1.0
1.5
2.0
0.5 1 10 100 1000
0.2
0.5
5
1
10
30
25°C
1 cycle
10 ms
TSM
I
Average on-state power PT(AV) (W)
Case temperature T
C
(°C)
17
(VD=30V, RGK=1kΩ)
(VD=6V, RL=10Ω)(VD=6V, RL=10Ω)
TF821S, TF841S, TF861S
Tj =125°C
Tj = 25°C
Tj=125°C
Initial junction temperature
See graph at the upper right
Tj= –40°C
Tj=25°C
Tj= –20°C
50Hz Half-cycle sinewave
θ : Conduction angle
180°0°
θ
50Hz Half-cycle sinewave
θ : Conduction angle
180°0°
θ
Pulse width tw (µs)
Pulse trigger temperature
Characteristics
v
gt
(Typical)
vgt VGT DC gate trigger
voltage at 25°C
( )( )
Gate trigger voltage
at Ta and
t
w
Tj =–40°C
vgt
tw
–20°C
Pulse width tw (µs)
Pulse trigger temperature
Characteristics
i
gt
(Typical)
igt IGT DC gate trigger
current at 25°C
( )( )
Gate trigger current
at Ta and
t
w
Tj =–40°C
igt
tw
–20°C
Junction temperature Tj (°C)
Holding current I
H
(mA)
IH temperature Characteristics
(Typical)
Junction temperature Tj (°C)
Gate trigger voltage V
GT
(V)
VGT temperature Characteristics
(Typical)
Junction temperature Tj (°C)
Gate trigger current I
GT
(mA)
IGT temperature Characteristics
(Typical)
t, Time (ms)
Transient thermal resistance rth (°C/W)
Transient thermal resistance
Characteristics
(Junction to case)
