TO-220F 8A Thyristor TF821S, TF841S, TF861S Features External Dimensions 3.30.2 Gate trigger current: IGT=15mA max Isolation voltage: VISO=1500V(50Hz Sine wave, RMS) 13.0 min UL approved type available 3.90.2 0.80.2 16.9 0.3 Average on-state current: IT(AV)=8A 4.2 2.8 10.00.2 0.2 C 0.5 8.40.2 4.00.2 (Unit: mm) Repetitive peak off-state voltage: VDRM=200, 400, 600V a b 1.350.15 1.35 +0.2 0.85 - 0.1 0.15 2.54 2.54 2.20.2 2.40.2 +0.2 0.45 - 0.1 (1). Cathode (K) (2). Anode (A) (3). Gate (G) a. Part Number b. Lot Number Weight: Approx. 2.1g (1) (2) (3) Absolute Maximum Ratings Parameter Symbol Repetitive peak off-state voltage Repetitive peak reverse voltage Ratings Unit TF821S TF841S TF861S VDRM 200 400 600 V VRRM 200 400 600 V Non-repetitive peak off-state voltage VDSM 300 500 700 V Non-repetitive peak reverse voltage VRSM 300 500 700 V Average on-state current IT(AV) 8.0 A IT(RMS) 12.6 A Surge on-state current ITSM 120 A Peak forward gate current IFGM 2.0 A Peak forward gate voltage VFGM 10 V Peak reverse gate voltage VRGM 5.0 Peak gate power loss PGM 5.0 PG(AV) 0.5 W Junction temperature Tj - 40 to +125 C Storage temperature Tstg - 40 to +125 C Isolation voltage VISO 1500 V RMS on-state current Average gate power loss Conditions Tj= -40 to +125C, RGK =1k 50Hz Half-cycle sinewave, Continuous current, Tc=87C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f 50Hz, duty V f 50Hz W f 50Hz, duty 10% 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min. Electrical Characteristics Parameter Symbol Ratings min typ max Unit Off-state current IDRM 2.0 mA Reverse current IRRM 2.0 mA On-state voltage VTM 1.4 V Gate trigger voltage VGT 1.5 V Gate trigger current IGT 15 mA Gate non-trigger voltage VGD Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance 16 5.0 V 0.1 IH 4.0 mA dv/dt 50 V/S tq 30 Rth S 3.6 C/W Conditions Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=15A VD=6V, RL=10, TC=25C VD=1/2 x VDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case TF821S, TF841S, TF861S ITSM Ratings Tj =125C 10 Tj = 25C 5 1.0 2.0 On-state voltage 3.0 60 40 G M Tj = -40C Tj = -20C Tj =25C 20 30 =5 W 4 See graph at the upper right 0 100 0 1 2 Gate current 180 3 iGF (A) 0 DC 180 50 90 120 75 25 0 5 10 0 15 ( trigger current igt (Gate ) at Ta and tw 25C 75C 125C 1 10 100 IH temperature Characteristics (Typical) 1000 tw 10 Tj =- 40C 5 -20C 25C 1 75C 0.5 0.2 0.5 1 10 100 t w (s) (Typical) (VD=6V, RL=10) 0.4 0.2 0 -40 0 25 50 75 100 Junction temperature Tj (C) 125 50 75 100 125 10 rth (C/W) 10 5 3 1 - 40 25 Transient thermal resistance Characteristics (Junction to case) Transient thermal resistance Gate trigger current IGT (mA) 30 0.6 0 Junction temperature Tj (C) IGT temperature Characteristics 50 3 -40 1000 (Typical) 0.8 10 5 VGT temperature Characteristics 1.0 50 125C Pulse width (VD=6V, RL=10) (VD=30V, RGK=1k) 100 igt ) gate trigger IGT DC current at 25C ) tw 0.5 0.5 15 30 Tj =- 40C -20C 1.0 10 Pulse trigger temperature Characteristics igt (Typical) vgt 1.5 5 Average on-state current IT(AV) (A) Holding current IH (mA) 0 Pulse width tw (s) Gate trigger voltage VGT (V) 10 Gate trigger current IGT (mA) 100 60 Case temperature TC (C) DC 0 0 18 12 30 60 90 4 2.0 ( 50 125 Pulse trigger temperature Characteristics vgt (Typical) gate trigger VGT DC voltage at 25C 10 0 50Hz Half-cycle sinewave : Conduction angle Average on-state current IT(AV) (A) trigger voltage vgt ( Gate ) at Ta and tw 5 0 P 6 2 1 1 IT(AV) - Tc Ratings 8 0 50Hz 8 2 150 0 12 80 10 Number of cycle = Average on-state power PT(AV) (W) 180 1 cycle 100 20 50Hz Half-cycle sinewave : Conduction angle 16 10 ms vT ( V ) IT(AV) - PT(AV) Characteristics 20 12 I TSM 120 =30 0.8 14 Initial junction temperature Tj=125C vGF (V) Surge on-state current ITSM (A) On-state current iT (A) 50 1 Gate Characteristics 140 Gate voltage 100 Gate trigger voltage VGT (V) vT - iT Characteristics (max) 0 25 50 75 100 Junction temperature Tj (C) 125 1 0.1 1 10 10 2 10 3 10 4 10 5 t, Time (ms) 17