2
A
AWT924S10
Advanced Product Information - Rev. 1
ELECTRICAL CHARACTERISTICS GSM (1)
Pin = +6.0 dBm, f = 890 - 915 MHz, VDB=VD1 =VD2 =VD3 = +4.8 V, VSS = -4 V, VC = 0, Tc = 25OC, Zo = 50W
Notes: 1. As measured in ANADIGICS test fixture under pulsed operation ( PW = 577mS, DC = 1:8).
2. Measured @ POUT = 34.7 dBm.
3. Noise in RX Frequency band @ bandwidth = 30 KHz, frx = 935 - 960 MHz.
ELECTRICAL CHARACTERISTICS DCS1800 (1)
Pin = +6.0 dBm, f = 1710 - 1785 MHz, VDB=VD1 =VD2 =VD3 = +4.8 V, VSS = -4 V, VC =4.8V, Tc = 25OC, Zo = 50W
Notes: 1. As measured in ANADIGICS test fixture under pulsed operation (PW = 577mS, DC = 1:8).
2. Measured @ 32.0 dBm.
3. Noise in RX frequency band @ bandwidth = 30 KHz. frx = 1805-1880 MHz.
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