© Semiconductor Components Industries, LLC, 2009
October, 2009 Rev. 7
1Publication Order Number:
CAT28LV64/D
CAT28LV64
64 kb CMOS Parallel
EEPROM
Description
The CAT28LV64 is a low voltage, low power, CMOS Parallel
EEPROM organized as 8K x 8bits. It requires a simple interface for
insystem programming. Onchip address and data latches,
selftimed write cycle with autoclear and VCC power up/down write
protection eliminate additional timing and protection hardware. DATA
Polling and Toggle status bit signal the start and end of the selftimed
write cycle. Additionally, the CAT28LV64 features hardware and
software write protection.
The CAT28LV64 is manufactured using ON Semiconductors
advanced CMOS floating gate technology. It is designed to endure
100,000 program/erase cycles and has a data retention of 100 years.
The device is available in JEDEC approved 28pin DIP, 28pin TSOP,
28pin SOIC or 32pin PLCC packages.
Features
3.0 V to 3.6 V Supply
Read Access Times:
– 150/200/250 ns
Low Power CMOS Dissipation:
– Active: 8 mA Max.
– Standby: 100 mA Max.
Simple Write Operation:
– Onchip Address and Data Latches
– Selftimed Write Cycle with Autoclear
Fast Write Cycle Time:
– 5 ms Max.
Commercial, Industrial and Automotive Temperature Ranges
CMOS and TTL Compatible I/O
Automatic Page Write Operation:
– 1 to 32 bytes in 5 ms
– Page Load Timer
End of Write Detection:
– Toggle bit
– DATA Polling
Hardware and Software Write Protection
100,000 Program/Erase Cycles
100 Year Data Retention
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 15 of this data sheet.
ORDERING INFORMATION
PDIP28
P, L SUFFIX
CASE 646AE
PLCC32
N, G SUFFIX
CASE 776AK
Address InputsA0A12
Data Inputs/OutputsI/O0I/O7
Chip EnableCE
Output EnableOE
Write EnableWE
3.0 V to 3.6 V SupplyVCC
FunctionPin Name
PIN FUNCTION
SOIC28
J, K, W, X SUFFIX
CASE 751BM
GroundVSS
No ConnectNC
TSOP28
H13 SUFFIX
CASE 318AE
CAT28LV64
http://onsemi.com
2
PIN CONFIGURATIONS
5
7
6
10
9
12
11
8
13
14 15 16 17 18 19 20
4 3 2 1 32 31 30
29
27
28
24
25
22
23
26
21
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
A7
A12
NC
NC
VCC
WE
NC
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
VSS
NC
PLCC Package (N, G)
DIP Package (P, L) SOIC Package (J, K, W, X)
5
4
7
6
3
2
1
10
9
12
11
8
22
23
20
21
24
25
26
17
18
15
16
19
14
13
27
28
5
4
7
6
3
2
1
10
9
12
11
8
22
23
20
21
24
25
26
17
18
15
16
19
14
13
27
28
TSOP Package (8 mm x 13.4 mm) (H13)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
WE
VCC
NC
NC
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
WE
VCC
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
WE
VCC
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
(Top Views)
CAT28LV64
http://onsemi.com
3
Figure 1. Block Diagram
CE
OE
WE
VCC
A0A4
A5A12
DATA POLLING
AND
TOGGLE BIT I/O0I/O7
ADDR. BUFFER
& LATCHES
ADDR. BUFFER
& LATCHES
INADVERTENT
CONTROL
LOGIC
TIMER
HIGH VOLTAGE
GENERATOR
I/O BUFFERS
32 BYTE PAGE
REGISTER
WRITE
PROTECTION
ROW
DECODER
COLUMN
DECODER
8,192 x 8
E2PROM
ARRAY
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Temperature Under Bias 55 to +125 °C
Storage Temperature 65 to +150 °C
Voltage on Any Pin with Respect to Ground (Note 1) 2.0 V to +VCC + 2.0 V V
VCC with Respect to Ground 2.0 to +7.0 V
Package Power Dissipation Capability (TA = 25°C) 1.0 W
Lead Soldering Temperature (10 secs) 300 °C
Output Short Circuit Current (Note 2) 100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC + 0.5 V, which may overshoot to VCC + 2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS (Note 3)
Symbol Parameter Test Method Min Max Units
NEND Endurance MILSTD883, Test Method 1033 105Cycles/Byte
TDR Data Retention MILSTD883, Test Method 1008 100 Years
VZAP ESD Susceptibility MILSTD883, Test Method 3015 2,000 V
ILTH (Note 4) LatchUp JEDEC Standard 17 100 mA
3. These parameters are tested initially and after a design or process change that affects the parameters.
4. Latchup protection is provided for stresses up to 100 mA on address and data pins from 1 V to VCC + 1 V.
Table 3. MODE SELECTION
Mode CE WE OE I/O Power
Read L H L DOUT ACTIVE
Byte Write (WE Controlled) L H DIN ACTIVE
Byte Write (CE Controlled) L H DIN ACTIVE
Standby and Write Inhibit H X X HighZ STANDBY
Read and Write Inhibit X H H HighZ ACTIVE
CAT28LV64
http://onsemi.com
4
Table 4. CAPACITANCE (TA = 25°C, f = 1.0 MHz)
Symbol Test Max Conditions Units
CI/O (Note 5) Input/Output Capacitance 10 VI/O = 0 V pF
CIN (Note 5) Input Capacitance 6 VIN = 0 V pF
5. This parameter is tested initially and after a design or process change that affects the parameter.
Table 5. D.C. OPERATING CHARACTERISTICS (VCC = 3.0 V to 3.6 V, unless otherwise specified.)
Symbol Parameter Test Conditions
Limits
Units
Min Typ Max
ICC VCC Current (Operating, TTL) CE = OE = VIL,
f = 1/tRC min, All I/O’s Open
8 mA
ISBC (Note 6) VCC Current (Standby, CMOS) CE = VIHC, All I/O’s Open 100 mA
ILI Input Leakage Current VIN = GND to VCC 1 1 mA
ILO Output Leakage Current VOUT = GND to VCC,
CE = VIH
5 5 mA
VIH (Note 6) High Level Input Voltage 2 VCC + 0.3 V
VIL Low Level Input Voltage 0.3 0.6 V
VOH High Level Output Voltage IOH = 100 mA2 V
VOL Low Level Output Voltage IOL = 1.0 mA 0.3 V
VWI Write Inhibit Voltage 2 V
6. VIHC = VCC 0.3 V to VCC + 0.3 V.
Table 6. A.C. CHARACTERISTICS, READ CYCLE (VCC = 3.0 V to 3.6 V, unless otherwise specified.)
Symbol Parameter
28LV6415 28LV6420 28LV6425
Units
Min Max Min Max Min Max
tRC Read Cycle Time 150 200 250 ns
tCE CE Access Time 150 200 250 ns
tAA Address Access Time 150 200 250 ns
tOE OE Access Time 70 80 100 ns
tLZ (Note 7) CE Low to Active Output 0 0 0 ns
tOLZ (Note 7) OE Low to Active Output 0 0 0 ns
tHZ (Notes 7, 8) CE High to HighZ Output 50 50 55 ns
tOHZ (Notes 7, 8) OE High to HighZ Output 50 50 55 ns
tOH (Note 7) Output Hold from Address Change 0 0 0 ns
7. This parameter is tested initially and after a design or process change that affects the parameter.
8. Output floating (HighZ) is defined as the state when the external data line is no longer driven by the output buffer.
CAT28LV64
http://onsemi.com
5
Figure 2. A.C. Testing Input/Output Waveform (Note 9)
INPUT PULSE LEVELS REFERENCE POINTS
2.0 V
0.6 V
0.0 V
VCC 0.3 V
9. Input rise and fall times (10% and 90%) < 10 ns.
Figure 3. A.C. Testing Load Circuit (example)
DEVICE
UNDER
TEST
1.8 K
OUTPUT
1. 3 K
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
VCC
Table 7. A.C. CHARACTERISTICS, WRITE CYCLE (VCC = 3.0 V to 3.6 V, unless otherwise specified.)
Symbol Parameter
28LV6415 28LV6420 28LV6425
Units
Min Max Min Max Min Max
tWC Write Cycle Time 5 5 5 ms
tAS Address Setup Time 0 0 0 ns
tAH Address Hold Time 100 100 100 ns
tCS CE Setup Time 0 0 0 ns
tCH CE Hold Time 0 0 0 ns
tCW (Note 10) CE Pulse Time 110 150 150 ns
tOES OE Setup Time 0 10 10 ns
tOEH OE Hold Time 0 10 10 ns
tWP (Note 10) WE Pulse Width 110 150 150 ns
tDS Data Setup Time 60 100 100 ns
tDH Data Hold Time 0 0 0 ns
tINIT (Note 11) Write Inhibit Period After
Powerup
5 10 5 10 5 10 ms
tBLC
(Notes 11, 12)
Byte Load Cycle Time 0.05 100 0.1 100 0.1 100 ms
10.A write pulse of less than 20 ns duration will not initiate a write cycle.
11. This parameter is tested initially and after a design or process change that affects the parameter.
12. A timer of duration tBLC max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin; however
a transition from HIGH to LOW within tBLC max. stops the timer.
CAT28LV64
http://onsemi.com
6
DEVICE OPERATION
Read
Data stored in the CAT28LV64 is transferred to the data
bus when WE is held high, and both OE and CE are held low.
The data bus is set to a high impedance state when either CE
or OE goes high. This 2line control architecture can be used
to eliminate bus contention in a system environment.
Byte Write
A write cycle is executed when both CE and WE are low,
and OE is high. Write cycles can be initiated using either WE
or CE, with the address input being latched on the falling
edge of WE or CE, whichever occurs last. Data, conversely,
is latched on the rising edge of WE or CE, whichever occurs
first. Once initiated, a byte write cycle automatically erases
the addressed byte and the new data is written within 5 ms.
Figure 4. Read Cycle
ADDRESS
DATA OUT DATA VALIDDATA VALID
HIGHZ
tOHZ
tHZ
tAA
tOH
tOE
tOLZ
tCE
tLZ
tRC
VIH
CE
OE
WE
Figure 5. Byte Write Cycle [WE Controlled]
CE
OE
WE
ADDRESS
DATA OUT
DATA IN DATA VALID
HIGHZ
tWP
tOES
tDS tDH
tBLC
tOEH
tCHtCS
tAS tAH
tWC
CAT28LV64
http://onsemi.com
7
Page Write
The page write mode of the CAT28LV64 (essentially an
extended BYTE WRITE mode) allows from 1 to 32 bytes of
data to be programmed within a single EEPROM write
cycle. This effectively reduces the bytewrite time by a
factor of 32.
Following an initial WRITE operation (WE pulsed low,
for tWP
, and then high) the page write mode can begin by
issuing sequential WE pulses, which load the address and
data bytes into a 32 byte temporary buffer. The page address
where data is to be written, specified by bits A5 to A12, is
latched on the last falling edge of WE. Each byte within the
page is defined by address bits A0 to A4 (which can be loaded
in any order) during the first and subsequent write cycles.
Each successive byte load cycle must begin within tBLC MAX
of the rising edge of the preceding WE pulse. There is no
page write window limitation as long as WE is pulsed low
within tBLC MAX.
Upon completion of the page write sequence, WE must
stay high a minimum of tBLC MAX for the internal automatic
program cycle to commence. This programming cycle
consists of an erase cycle, which erases any data that existed
in each addressed cell, and a write cycle, which writes new
data back into the cell. A page write will only write data to
the locations that were addressed and will not rewrite the
entire page.
Figure 6. Byte Write Cycle [CE Controlled]
CE
OE
WE
tCS
tOES
ADDRESS
DATA OUT
DATA IN DATA VALID
HIGHZ
tAS
tCH
tOEH
tDH
tCW
tAH
tWC
tDS
tBLC
ADDRESS
I/O
BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 BYTE n+2
LAST BYTE
Figure 7. Page Mode Write Cycle
OE
CE
WE
tWP tBLC
tWC
CAT28LV64
http://onsemi.com
8
DATA Polling
DATA polling is provided to indicate the completion of
write cycle. Once a byte write or page write cycle is initiated,
attempting to read the last byte written will output the
complement of that data on I/O7 (I/O0–I/O 6 are
indeterminate) until the programming cycle is complete.
Upon completion of the selftimed write cycle, all I/O’s will
output true data during a read cycle.
Toggle Bit
In addition to the DATA Polling feature, the device offers
an additional method for determining the completion of a
write cycle. While a write cycle is in progress, reading data
from the device will result in I/O6 toggling between one and
zero. However, once the write is complete, I/O6 stops
toggling and valid data can be read from the device.
Figure 8. DATA Polling
ADDRESS
I/O7
WE
OE
CE
DIN = X DOUT = X DOUT = X
tOEH tOE
tWC
tOES
Figure 9. Toggle Bit
WE
OE
I/O6
CE
tOEH tOE
tWC
tOES
(Note 13) (Note 13)
13.Beginning and ending state of I/O6 is indeterminate.
CAT28LV64
http://onsemi.com
9
Hardware Data Protection
The following is a list of hardware data protection features
that are incorporated into the CAT28LV64.
1. VCC sense provides for write protection when VCC
falls below 2.0 V min.
2. A power on delay mechanism, tINIT (see AC
characteristics), provides a 5 to 10 ms delay before
a write sequence, after VCC has reached 2.40 V
min.
3. Write inhibit is activated by holding any one of
OE low, CE high or WE high.
4. Noise pulses of less than 20 ns on the WE or CE
inputs will not result in a write cycle.
Software Data Protection
The CAT28LV64 features a software controlled data
protection scheme which, once enabled, requires a data
algorithm to be issued to the device before a write can be
performed. The device is shipped from ON Semiconductor
with the software protection NOT ENABLED (the
CAT28LV64 is in the standard operating mode).
Figure 10. Write Sequence for Activating Software
Data Protection
Figure 11. Write Sequence for Deactivating
Software Data Protection
WRITE DATA: XX
WRITE LAST BYTE
TO
LAST ADDRESS
TO ANY ADDRESS
WRITE DATA: AA
ADDRESS: 1555
WRITE DATA: 55
ADDRESS: 0AAA
WRITE DATA: A0
ADDRESS: 1555
WRITE DATA: AA
ADDRESS: 1555
WRITE DATA: 55
ADDRESS: 0AAA
WRITE DATA: 80
ADDRESS: 1555
WRITE DATA: AA
ADDRESS: 1555
WRITE DATA: 55
ADDRESS: 0AAA
WRITE DATA: 20
ADDRESS: 1555
SOFTWARE DATA
PROTECTION ACTIVATED (Note 14)
14.Write protection is activated at this point whether or not any more writes are completed. Writing to addresses must occur within tBLC Max.,
after SDP activation.
CAT28LV64
http://onsemi.com
10
To activate the software data protection, the device must
be sent three write commands to specific addresses with
specific data (Figure 10). This sequence of commands
(along with subsequent writes) must adhere to the page write
timing specifications (Figure 12). Once this is done, all
subsequent byte or page writes to the device must be
preceded by this same set of write commands. The data
protection mechanism is activated until a deactivate
sequence is issued regardless of power on/off transitions.
This gives the user added inadvertent write protection on
powerup in addition to the hardware protection provided.
To allow the user the ability to program the device with an
EEPROM programmer (or for testing purposes) there is a
software command sequence for deactivating the data
protection. The six step algorithm (Figure 11) will reset the
internal protection circuitry, and the device will return to
standard operating mode (Figure 13 provides reset timing).
After the sixth byte of this reset sequence has been issued,
standard byte or page writing can commence.
AA
1555
55
0AAA
A0
1555
DATA
ADDRESS
BYTE OR
PAG E
WRITES
ENABLED
DATA
ADDRESS
SDP
RESET
DEVICE
UNPROTECTED
AA
1555
55
0AAA
80
1555
AA
1555
55
0AAA
20
1555
Figure 12. Software Data Protection Timing
Figure 13. Resetting Software Data Protection Timing
WE
CE
tWP tBLC
WE
CE
tWC
tWC
CAT28LV64
http://onsemi.com
11
PACKAGE DIMENSIONS
PLCC 32
CASE 776AK01
ISSUE O
E1 E2E
PIN#1 IDENTIFICATION
D
D1
be
b1
D2
A2
A3
SIDE VIEW
TOP VIEW END VIEW
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC MS-016.
SYMBOL MIN NOM MAX
A2
A3
b
b1
D
D1
D2
E
E1
e
E2
2.54
0.33
0.66
12.32
12.10
11.36
9.56
14.86
0.38
2.80
0.54
0.82
12.57
13.86
11.50
11.32
15.11
1.27 BSC
13.90 14.04
CAT28LV64
http://onsemi.com
12
PACKAGE DIMENSIONS
SOIC28, 300 mils
CASE 751BM01
ISSUE O
L
hh
E
PIN #1
IDENTIFICATION
D
A1 c
q1
be
E1
A
A2
TOP VIEW
SIDE VIEW END VIEW
q1
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MS-013.
q
SYMBOL MIN NOM MAX
θ
A
A1
b
c
D
E
E1
e
h
0.10
0.31
0.20
0.25
17.78
10.11
7.34
1.27 BSC
2.65
0.30
0.51
0.33
0.75
18.03
10.51
7.60
L0.40 1.27
2.35
A2 2.05 2.55
θ1 15º
CAT28LV64
http://onsemi.com
13
PACKAGE DIMENSIONS
PDIP28, 600 mils
CASE 646AE01
ISSUE A
c
E1
D
ebb1
A2 A
A1 L
eB
SIDE VIEW
TOP VIEW
END VIEW
Notes:
(1) All dimensions are in millimeters.
(2) Complies with JEDEC MS-011.
E
SYMBOL MIN NOM MAX
A
A1
A2
b
b1
c
D
e
E1
L
0.39
3.18
0.36
12.32
0.77
0.21
35.10
2.54 BSC
6.35
4.95
0.55
14.73
1.77
0.38
39.70
eB 15.24 17.78
E 15.24 15.87
2.93 5.08
CAT28LV64
http://onsemi.com
14
PACKAGE DIMENSIONS
TSOP 28, 8x13.4
CASE 318AE01
ISSUE O
TOP VIEW
D
D1
PIN 1
e
L
L2
c
L1
b
A2
E1
SIDE VIEW
END VIEW
q1
A1
A
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MS-183.
SYMBOL MIN NOM MAX
q
θ
A
A1
A2
b
c
D
D1
E
e
L1
L2
0.05
0.90
0.17
0.10
0.675
13.20
11.70
7.90
0.55 BSC
0.25 BSC
1.20
0.15
1.05
0.27
0.20
13.60
11.90
8.10
13.40
11.80
8.00
θ1 10° 12° 16°
1.00 1.10
1.00
0.22
0.15
L 0.30 0.700.50
CAT28LV64
http://onsemi.com
15
Example of Ordering Information (Note 15)
Prefix Device # Suffix
Company ID
CAT 28LV64 N
Product Number
28LV64
I 25 T
Package
Blank = Commercial (0°C to +70°C)
I = Industrial (40°C to +85°C)
A = Automotive (40°C to +105°C) (Note 17)
Temperature Range
P: PDIP
J: SOIC (JEDEC)
K: SOIC (EIAJ)
N: PLCC
L: PDIP (Lead Free, Halogen Free)
W: SOIC (JEDEC) (Lead Free, Halogen Free)
X: SOIC (EIAJ) (Lead Free, Halogen Free)
G: PLCC (Lead Free, Halogen Free)
H13: TSOP (8 mm x 13.4 mm) (Lead Free, Halogen Free) (Note 16)
T: Tape & Reel
Speed
15: 150 ns
20: 200 ns
25: 250 ns
Tape & Reel (Note 18)
(Optional)
ORDERING INFORMATION
Orderable Part Numbers (for PbFree Devices)
CAT28LV64GI15T CAT28LV64H13A15T CAT28LV64WI15T CAT28LV64XA15T
CAT28LV64GI20T CAT28LV64H13A20T CAT28LV64WI20T CAT28LV64XA20T
CAT28LV64GI25T CAT28LV64H13A25T CAT28LV64WI25T CAT28LV64XA25T
CAT28LV64GA15T CAT28LV64LI15 CAT28LV64WA15T
CAT28LV64GA20T CAT28LV64LI20 CAT28LV64WA20T
CAT28LV64GA25T CAT28LV64LI25 CAT28LV64WA25T
CAT28LV64H13I15T CAT28LV64LA15 CAT28LV64XI15T
CAT28LV64H13I20T CAT28LV64LA20 CAT28LV64XI20T
CAT28LV64H13I25T CAT28LV64LA25 CAT28LV64XI25T
15.The device used in the above example is a CAT28LV64NI25T (PLCC, Industrial temperature, 250 ns Access Time, Tape & Reel).
16.For the TSOP package (H13), the orderable part number does not contain a hyphen, example: CAT28LV64H13I20T.
17.40°C to +125°C is available upon request.
18.For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
CAT28LV64/D
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative