PTFA092201E
PTFA092201F
Data Sheet 1 of 11 Rev. 03.1, 2009-02-20
All published data at TCASE = 25 °C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA092201E and PTFA092201F are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092201E
Package H-36260-2
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
2-Carrier WCDMA Performance
VDD = 30 V, IDQ
= 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
0
10
20
30
40
50
60
30 35 40 45 50
Output Power, Avg. (dBm)
Drain Efficiency (%)
-60
-55
-50
-45
-40
-35
-30
IMD (dBc), ACPR (dBc)
IMD ACPR
Gain
Efficiency
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1850 mA, POUT = 55 W average
ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Intermodulation Distortion IMD —–37 —dBc
Gain Gps —18.5 —dB
Drain Efficiency ηD—30 —%
PTFA092201F
Package H-37260-2
Features
•Pb-free, RoHS-compliant and thermally-enhanced
packages
•Broadband internal matching
•Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.5 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
•Typical CW performance, 960 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.5 dB
- Efficiency = 59%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
*See Infineon distributor for future availability.
PTFA092201E
PTFA092201F
Data Sheet 2 of 11 Rev. 03.1, 2009-02-20
*See Infineon distributor for future availability.
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1850 mA, POUT = 220 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 17.5 18.5 —dB
Drain Efficiency ηD42 44 —%
Intermodulation Distortion IMD — — –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.04 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1850 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD700 W
Above 25 °C derate by 4.0 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70 °C, 220 W CW) RθJC 0.25 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA092201E V4 H-36260-2 Thermally-enhanced slotted flange, Tray PTFA092201E
single-ended
PTFA092201F V4 H-37260-2 Thermally-enhanced earless flange, Tray PTFA092201F
single-ended
PTFA092201E
PTFA092201F
Data Sheet 3 of 11 Rev. 03.1, 2009-02-20
2-Carrier WCDMA (high gain tune)
VDD = 30 V, IDQ
= 2000 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
0
5
10
15
20
25
30
35
30 35 40 45 50
Output Power (dBm)
Efficiency (%), Gain (dB)
-60
-55
-50
-45
-40
-35
-30
IMD (dBc), ACPR (dBc)
Efficiency
ACPR
Gain
IMD
Typical Performance (data taken in a production test fixture)
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz
15
16
17
18
19
20
21
22
30 35 40 45 50 55 60
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
Efficiency
Gain
Two-carrier WCDMA Power Sweep
VDD = 30 V, IDQ = 1600 mA, ƒ1 = 889 MHz, ƒ2
= 894,
PAR = 7.1 dB each carrier at 0.01% probability
-60
-50
-40
-30
-20
-10
0
0 10 20 30 40 50
Output Power (dBm)
ACPR (dBc)
5
10
15
20
25
30
35
Drain Efficiency (%)
Efficiency
ACPR
2-Carrier WCDMA Performance
VDD = 30 V, IDQ
= 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
0
10
20
30
40
50
60
30 35 40 45 50
Output Power (dBm)
Efficiency (%), Gain (dB)
-60
-55
-50
-45
-40
-35
-30
IMD (dBc), ACPR (dBc)
Efficiency
Gain
ACPR
IMD
TCASE = 25°C
TCASE = 90°C
PTFA092201E
PTFA092201F
Data Sheet 4 of 11 Rev. 03.1, 2009-02-20
Power Sweep, CW
VDD
= 30 V, ƒ = 960 MHz,
series show IDQ
17
18
19
20
30 35 40 45 50 55
Output Power (dBm)
Power Gain (dB)
2300 mA
1450 mA
1550 mA
2-Tone Broadband (tuned for high gain)
VDD = 30 V, IDQ = 2000 mA, POUT = 80 W
15
20
25
30
35
40
45
50
880 900 920 940 960 980 1000
Frequency (MHz)
Efficiency (%), Gain (dB)
-35
-30
-25
-20
-15
-10
-5
0
Return Loss (dB)
Gain
Return Loss
Efficiency
2-Tone Broadband Performance
VDD = 30 V, IDQ = 1850 mA, POUT = 110 W
15
20
25
30
35
40
45
50
880 900 920 940 960 980 1000
Frequency (MHz)
Efficiency (%), Gain (dB)
-35
-30
-25
-20
-15
-10
-5
0
Return Loss (dB)
Gain
Return Loss
Efficiency
Typical Performance (cont.)
CW (high gain tuned)
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 2000 mA, ƒ = 960 MHz
15
16
17
18
19
20
21
22
30 35 40 45 50 55 60
Output Power (dBm)
Gain (dB)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
Efficiency
Gain
PTFA092201E
PTFA092201F
Data Sheet 5 of 11 Rev. 03.1, 2009-02-20
IS-95 CDMA Performance
VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz
0
10
20
30
40
25 30 35 40 45 50
Output Power, Avg. (dBm)
Drain Efficiency (%)
-80
-70
-60
-50
-40
Adj. Ch. Power Ratio (dBc)
Efficiency
Adj 750 kHz
Alt1 1.98 MHz
Output Power vs. Supply Voltage
IDQ = 1850 mA, ƒ = 960 MHz
51
52
53
54
55
24 26 28 30 32 34 36
Supply Voltage (V)
Output Power (dBm)
Intermodulation Distortion vs. Output Power
(high gain tune)
VDD = 30 V, IDQ = 2000 mA, ƒ1 = 859, ƒ2 = 960 MHz
-80
-70
-60
-50
-40
-30
-20
30 35 40 45 50 55
Output Power, PEP (dBm)
IMD (dBc)
3rd Order
5th
7th
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
VDD = 30 V, IDQ = 1850 mA, ƒ1 = 960, ƒ2 = 959 MHz
-80
-70
-60
-50
-40
-30
-20
30 35 40 45 50 55
Output Power, PEP (dBm)
IMD (dBc)
3rd Order
5th
7th
PTFA092201E
PTFA092201F
Data Sheet 6 of 11 Rev. 03.1, 2009-02-20
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
900 2.256 –1.363 1.722 –0.413
920 2.250 –1.094 1.653 –0.109
940 2.282 –0.826 1.651 0.186
960 2.239 –0.545 1.562 0.518
980 2.288 –0.307 1.562 0.795
0.1
0.1
0.1
-
W
AV
E
LE
N
GT
H
S T
O
W
AR
D
G
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
900 MHz
980 MHz
900 MHz
Z Load
Z Source
980 MHz
Z0 = 50 Ω
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
2.334 A
4.65 A
9.33 A
11.64 A
13.98 A
16.32 A
18.66 A
21 A
Typical Performance (cont.)
PTFA092201E
PTFA092201F
Data Sheet 7 of 11 Rev. 03.1, 2009-02-20
a 09 2 2 0 1 e f_s c h
RF_OUT
RF_IN
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R5
10 V
R4
2K V
R1
1.2K V
C8
33pF
l6
l7
l8
R8
10 V
DUT
C6
1µF
C5
0.1µF
C4
10µF
35V
C7
33pF
R7
5.1K V
R6
5.1K V
l1
C9
3.9pF
L1
C11
33pF
C13
10µF
50V
C12
1µF
C16
10µF
50V
C24
2.6pF
C25
33pF
l2l3l4l5
C10
4.9pF
C14
100µF
50V
C15
0.1µF
l9l10 l11 l12 l13
C23
2.6pF
C17
33pF
C19
10µF
50V
C18
1µF
C22
10µF
50V
C20
100µF
50V
C21
0.1µF
L2
VDD
Reference Circuit
Reference circuit block diagram for ƒ = 960 MHz
Circuit Assembly Information
DUT PTFA092201E or PTFA092201F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 960 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.068 λ, 52.0 Ω12.78 x 1.60 0.503 x 0.063
l20.041 λ, 38.0 Ω7.57 x 2.54 0.298 x 0.100
l30.040 λ, 38.0 Ω7.34 x 2.54 0.289 x 0.100
l40.092 λ, 7.8 Ω15.95 x 17.83 0.628 x 0.702
l50.025 λ, 7.8 Ω4.29 x 17.83 0.169 x 0.702
l60.208 λ, 78.3 Ω40.64 x 0.74 1.600 x 0.029
l7, l80.200 λ, 60.1 Ω40.64 x 1.24 1.500 x 0.049
l90.102 λ, 8.4 Ω17.65 x 16.48 0.695 x 0.649
l10 (taper) 0.021 λ, 8.4 Ω / 10.1 Ω3.56 x 16.48 / 13.36 0.140 x 0.649 / 0.526
l11 (taper) 0.094 λ, 10.1 Ω / 37.7 Ω16.38 x 13.36 / 2.64 0.645 x 0.526 / 0.104
l12 0.022 λ, 37.0 Ω4.04 x 2.64 0.159 x 0.104
l13 0.035 λ, 52.0 Ω6.55 x 1.60 0.258 x 0.063
1Electrical characteristics are rounded.
PTFA092201E
PTFA092201F
Data Sheet 8 of 11 Rev. 03.1, 2009-02-20
a092201ef_assy
RF_IN RF_OUT
A082201in_02 A092201in_02
RO4350_.030
A082201out_02 A092201out_02
RO4350_.030
LM
R4
Q1
QQ1
C3
C1
R2
C2
R5
R3C4
C9
R1
C5
C8
R6
R7
C7
C6
R8
C10
C21
C25
C24
C17
C18
C19
C22
L2
C11
C12
C16
L1
C15
C23
C13
VDD
VDD
VDD
C20
C14
Reference circuit assembly diagram (not to scale)*
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C15, C21 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C12, C18 Capacitor, 1 µF ATC 920C105
C7, C8, C11, C17, C25 Ceramic capacitor, 33 pF ATC 100B 330
C9 Ceramic capacitor, 3.9 pF ATC 100B 3R9
C10 Ceramic capacitor, 4.9 pF ATC 100B 4R9
C13, C16, C19, C22 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C14, C20 Electrolytic capacitor, 100 µF, 50 VDigi-Key P5571-ND
C23, C24 Ceramic capacitor, 2.6 pF ATC 100B 2R6
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R8 Chip resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
*Gerber Files for this circuit available on request
PTFA092201E
PTFA092201F
Data Sheet 9 of 11 Rev. 03.1, 2009-02-20
Package Outline Specifications
Package H-36260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
5. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
6. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
C66065-A2324-C001-01-0027
PTFA092201E
PTFA092201F
Data Sheet 10 of 11 Rev. 03.1, 2009-02-20
Package Outline Specifications (cont.)
Package H-37260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
5. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
6. All tolerances ± 0.25 [.01] / ± 0.127 [.005] unless specified otherwise.
C66065-A2325-C001-01-0027
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
PTFA092201E/F V4
Confidential, Limited Internal Distribution
Revision History: 2009-02-20 Data Sheet
Previous Version: 2006-06-05, Data Sheet Rev. 02, Product V1
Page Subjects (major changes since last revision)
all New product version V4, new package diagram and information.
8Fixed typing error ames for final page. Misc updates.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2006 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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