Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS60L
60 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS60L is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band.
The transistor includes a double input prematch for broadband performance.
The device has gold thin-film metallization and diffused ballasting in a
hermetically sealed package for proven highest MTTF.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipati on @2 5°C1 120 W
Maximum Voltage and Current
Collector to Emitter Voltag e (BVces) 60 V
Emitter to Base Voltage (BVebo) 3.5 V
Peak Collector Current (Ic) 4 A
Maximum Temperatures
Storage Tempera ture -65 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Out 60 W
Pin Power Input 6 W
Pg Power Gain 10 dB
ηc Collector Efficiency
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2 34 %
VSWR Load Mismatch Tolerance 2:1
Pd1 Pulse Droop 0.8 dB
Trise1 Rise Time 100 nSec
FUNCTIONAL CHARAC TERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 25 mA 60 V
BVcbo Collector to Base Breakdown Ic = 25 mA 60 V
hFE DC – Current Gain Vce = 5V, Ic = 500 mA 20
θjc1 Thermal Resistance 0.5 °C/W
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: ELM Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23mSec
Rev A - March 2008
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS60L SAMPLE RF DATA (SN#2-8; WO#56653X)
Pout vs Pin ( EL M PULSE MOD; WO#56653X)
20
30
40
50
60
70
80
90
123456789
Pin(W)
Pout(W)
1030MHz
1090MHz
Gain vs Pin (ELM PULSE MOD; WO#56653X)
9.00
10.00
11.00
12.00
13.00
123456789
Pin(W)
Gain(dB)
1030MHz
1090MHz
Eff ic vs Pin (ELM PULSE MOD; WO#56653X)
34.0
38.0
42.0
46.0
123456789
Pin(W)
Effic(%)
1030MHz
1090MHz
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
MDS60L
