AOSS32338C 30V N-Channel MOSFET General Description Product Summary * Trench Power MOSFET technology * Low RDS(ON) * Low Gate Charge * RoHS and Halogen-Free Compliant ID (at VGS=10V) 30V 4A RDS(ON) (at VGS=10V) < 50m RDS(ON) (at VGS=4.5V) < 57m RDS(ON) (at VGS=2.5V) < 72m VDS ESD protection Applications * Ideal for Load Switching SOT23 Top View D Bottom View D D G G S S S G Orderable Part Number Package Type Form Minimum Order Quantity AOSS32338C SOT23-3 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: January 2019 Steady-State Steady-State RqJA RqJL www.aosmd.com A 1.3 W 0.8 TJ, TSTG Symbol t 10s V 24 PD TA=70C 12 3.1 IDM TA=25C B Units V 4 ID TA=70C Maximum 30 -55 to 150 Typ 70 100 63 C Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AOSS32338C Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=12V Gate Threshold Voltage VDS=VGS, ID=250mA V TJ=55C 10 A 1 1.5 V 40 50 58 73 VGS=4.5V, ID=4A 42 57 m VGS=2.5V, ID=3.5A 50 72 m 0.5 TJ=125C Forward Transconductance VDS=5V, ID=4A 20 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 gFS Coss Units 1 VGS=10V, ID=4A Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz m S 1 V 2 A 340 pF 30 pF 25 pF 8 12 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8 16 nC Qg(4.5V) Total Gate Charge 4 8 nC f=1MHz VGS=10V, VDS=15V, ID=4A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=4A, di/dt=500A/ms Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=3.75W, RGEN=3W IF=4A, di/dt=500A/ms 4 1 nC 1.2 nC 2.5 ns 3 ns 30 ns 5 ns 5.5 ns nC 4 A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2019 www.aosmd.com Page 2 of 5 AOSS32338C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 10V 2.5V VDS=5V 3.5V 15 15 2V 10 ID (A) ID (A) 4.5V 5 10 125C 5 25C VGS=1.5V 0 0 0 1 2 3 4 0 5 1 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 70 Normalized On-Resistance 1.7 60 VGS=2.5V RDS(ON) (mW) 2 50 VGS=4.5V 40 VGS=10V 30 VGS=4.5V ID=4A 1.5 VGS=10V ID=4A 1.3 VGS=2.5V ID=3.5A 1.1 0.9 20 0 2 4 6 8 0 10 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 100 1.0E+01 ID=4A 1.0E+00 125C 1.0E-01 125C IS (A) RDS(ON) (mW) 80 60 1.0E-02 25C 1.0E-03 40 25C 1.0E-04 20 1.0E-05 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2019 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.2 Page 3 of 5 AOSS32338C TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 500 VDS=15V ID=4A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 100 0 Coss Crss 0 0 2 4 6 8 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 1000 10ms TJ(Max)=150C TA=25C 10ms RDS(ON) limited 1.0 1ms TJ(Max)=150C TA=25C 0.1 0.0 0.01 10ms Power (W) 100 100ms ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 10 DC 1 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0.1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=125C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2019 www.aosmd.com Page 4 of 5 AOSS32338C Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: ResistiveSwitching Switching Test Test Circuit Resistive Circuit &&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2019 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5