AON7404
20V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=4.5V) 20A
R
DS(ON)
(at V
GS
=4.5V) < 6mΩ
R
DS(ON)
(at V
GS
=2.5V) < 7.5mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
160Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter Typ Max
T
C
=25°C
3.1
16
T
C
=100°C
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
°C/W
R
θJA
30
60 40
V±12Gate-Source Voltage
Drain-Source Voltage 20
The AON7404 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
20V
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
16
Continuous Drain
Current
162
20
A57
A
T
A
=25°C I
DSM
A
T
A
=70°C
I
D
40
31
T
C
=25°C
T
C
=100°C
Power Dissipation
B
P
D
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
40
2
T
A
=25°C
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
2.6 75
3.1
G
D
S
Top View
1
2
3
4
8
7
6
5
DFN 3x3_EP
Top View Bottom View
Pin 1
Rev 2: Mar. 2011 www.aosmd.com Page 1 of 6
AON7404
Symbol Min Typ Max Units
BV
DSS
20 V
V
DS
=20V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 0.5 1 1.6 V
I
D(ON)
160 A
4.9 6
T
J
=125°C 6.2 7.4
5.8 7.5 mΩ
g
FS
105 S
V
SD
0.6 1 V
I
S
40 A
C
iss
3080 3860 4630 pF
C
oss
520 740 960 pF
C
rss
350 580 810 pF
R
g
0.6 1.4 2.1 Ω
Q
g
(4.5V) 28 36 43 nC
Q
gs
7 9 11 nC
Q
gd
7 12 17 nC
t
D(on)
7 ns
t
r
8 ns
t
D(off)
70 ns
t
f
18 ns
t
rr
13 17 20 ns
Q
rr
29 36 43 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=10V, R
L
=0.56Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V
GS
=10V, V
DS
=10V, I
D
=20A
Gate Source Charge
Gate Drain Charge
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=2.5V, I
D
=18A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=4.5V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=500A/µs
V
GS
=0V, V
DS
=10V, f=1MHz
SWITCHING PARAMETERS
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.Maximum avalanche current limited by tester capability.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 2: Mar. 2011 www.aosmd.com Page 2 of 6
AON7404
17
5
2
10
0
18
40
0
20
40
60
80
0.5 1 1.5 2 2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
0
2
4
6
8
10
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C125°C
0.8
1
1.2
1.4
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=2.5V
I
D
=16A
V
GS
=4.5V
I
D
=20A
4
5
6
7
8
9
10
0 2 4 6 8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
I
D
=20A
25°C
125°C
0
20
40
60
80
100
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=1.5V
2.5V
4.5V
2V
Rev 2: Mar. 2011 www.aosmd.com Page 3 of 6
AON7404
17
5
2
10
0
18
40
0
2
4
6
8
10
0 20 40 60 80 100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
1000
2000
3000
4000
5000
6000
7000
0 5 10 15 20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=10V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
R
θJC
=3.1°C/W
Rev 2: Mar. 2011 www.aosmd.com Page 4 of 6
AON7404
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
10
20
30
40
50
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
R
θJA
=75°C/W
10.0
100.0
1000.0
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
I
AR
(A) Peak Avalanche Current
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
Rev 2: Mar. 2011 www.aosmd.com Page 5 of 6
AON7404
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 2: Mar. 2011 www.aosmd.com Page 6 of 6