7MBR30SC060 IGBT Modules
PIM/Built-in converter with thyristor
and brake (S series)
600V / 30A / PIM
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Repetitive peak reverse voltage(Diode)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge 0n-state current (Non-Repetitive)
Junction temperature
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Converter Thyristor Brake Inverter
Junction temperature (except Thyristor)
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
VCES
VGES
IC
ICP
-IC
PC
VCES
VGES
IC
ICP
PC
VRRM
VDRM
VRRM
IT(AV)
ITSM
Tjw
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Continuous
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=125°C, 10ms half sine wave
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
600
±20
30
60
30
120
600
±20
20
40
80
600
800
800
30
275
125
800
30
210
221
+150
-40 to +125
AC 2500
AC 2500
1.7 *1
V
V
A
A
A
W
V
V
A
A
W
V
V
V
A
A
°C
V
A
A
A2s
°C
°C
V
V
N·m
*1 Recommendable value : 1.3 to 1.7 N·m (M4)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26
should be connected together and shorted to copper base.
保守移行機種
Not recommend for new design.
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Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
Thermistor Converter Thyristor Brake Inverter
ICES
IGES
VGE(th)
VCE(sat)
Cies
ton
tr
toff
tf
VF
trr
ICES
IGES
VCE(sat)
ton
tr
toff
tf
IRRM
IDM
IRRM
IGT
VGT
VTM
VFM
IRRM
R
B
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=30mA
VGE=15V, Ic=30A chip
terminal
VGE=0V, V CE=10V, f=1MHz
VCC=300V
IC=30A
VGE=±15V
RG=82Ω
IF=30A chip
terminal
IF=30A
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=20A, VGE=15V chip
terminal
VCC=300V
IC=20A
VGE=±15V
RG=120Ω
VR=600V
VDM=800V
VRM=800V
VD=6V, IT=1A
VD=6V, IT=1A
ITM=30A chip
terminal
IF=30A chip
terminal
VR=800V
T=25°C
T=100°C
T=25/50°C
75
200
8.5
2.4
1.2
0.6
1.0
0.35
2.6
300
75
200
2.4
1.2
0.6
1.0
0.35
75
1.0
1.0
100
2.5
1.2
1.5
75
3000
5.5 7.8
µA
nA
V
V
pF
µs
V
ns
µA
nA
V
µs
µA
mA
mA
mA
V
V
V
µA
Ω
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
1.04
2.00
1.56
1.00 °C/W
1.33
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Contact thermal resistance * Rth(c-f)
Thermal resistance Characteristics
IGBT Module 7MBR30SC060
* This is the value which is defined mounting on the additional cooling fin with thermal compound
1.8
1.95
0.45
0.25
0.40
0.05
1.8
1.95
1.8
1.95
0.45
0.25
0.40
0.05
1.0
1.1
1.1
1.2
5000
465 495 520
3305 3375 3450
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR30SC060
Characteristics (Representative)
012345
0
10
20
30
40
50
60
70
10V
12V15VVGE = 20 V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25°C(typ.)
Collector current : Ic [ A ]
Co llecto r - Em itte r vo ltage : VCE [ V ]
012345
0
10
20
30
40
50
60
70
10V
12V
15V
VGE = 20 V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125°C(typ.)
Co llecto r - Em itte r vo ltage : VCE [ V ]
Collector current : Ic [ A ]
01234
0
10
20
30
40
50
60
70
Tj = 25°C Tj= 125°C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Co llecto r - Em itte r vo ltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 15A
Ic= 30A
Ic= 60A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C(typ.)
Collector - Emitter voltage : VCE [ V ]
Ga te - Emitte r vo lta ge : VGE [ V ]
0 5 10 15 20 25 30 35
100
1000
10000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitan ce : Cies, Coes, Cres [ pF ]
Co llecto r - Em itte r vo ltage : VCE [ V ]
Coes
Cres
Cies
0 50 100 150 200
0
100
200
300
400
500
[ Inverter ]
Dynamic Gate charge (ty p.)
Vcc=300V, Ic=30A, Tj= 25°C
Ga te charge : Q g [ n C ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR30SC060
0 1020304050
10
100
1000
ton
tr
toff
tf
[ In verter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=82Ω, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collecto r current : Ic [ A ]
0 1020304050
10
100
1000
tf
tr
ton
toff
[ In verter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg= 82Ω, Tj= 125°C
Collecto r current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
30 50 100 500
10
100
1000
5000
toff
ton
tr
tf
[ In verter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=30A, VGE=±15V, Tj= 25°C
Ga te re sista nce : Rg [ Ω ]
Switching time : ton, tr, toff, tf [ nsec ]
0 102030405060
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
[ In verter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=82Ω
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collecto r current : Ic [ A ]
30 50 100 500
0
1
2
3
4
5
6
[ In verter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=30A, VGE=±15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Ga te re sista nce : Rg [ Ω ]
Eon
Err
Eoff
0 200 400 600 800
0
50
100
150
200
250
300
350
SCSOA
(non-rep etitive pu l s e)
RBSOA
(Repet itive pul s e)
[ In verter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=82Ω, Tj<=125°C
Collect o r - E m itte r vo lta ge : VCE [ V ]
Collector current : Ic [ A ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR30SC060
0123
0
10
20
30
40
50
60
70
0.0 0.4 0.8 1.2 1.6 2.0
2
5
10
100
Tj=25°C
Tj=125°C
[ In verter ]
Forward current vs. Forward on voltage (typ.)
Forward curren t : IF [ A ]
Forwa rd on voltage : VF [ V ]
0 1020304050
5
10
100
300
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
[ In verter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=82Ω
Forwa rd current : IF [ A ]
Reverse recovery curren t : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.0 0.4 0.8 1.2 1.6 2.0
0
10
20
30
40
50
60
70
Tj= 25°C Tj= 125°C
[ Converter ]
Forward current vs. Forward on voltage (typ.)
Forwa rd on voltage : VFM [ V ]
Forward curren t : IF [ A ]
0.001 0.01 0.1 1
0.05
0.1
1
10
IGBT[Inverter]
Con v. Diode
Transient th ermal resistance
Thermal resistanse : Rth(j-c) [ °C/W ]
Pu lse width : P w [ sec ]
FWD[Inverter]
Thyristor
IGBT[Brake]
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.1
1
10
100
200
[ Thermistor ]
Temperature characteristic (typ.)
Temperature [ °C ]
Resistance : R [ kΩ ]
[ Thyristor ]
On-state current vs. On-state voltage (typ.)
Tjw= 125° C Tjw= 25° C
Instantaneous on-state current [ A ]
In stantan e o u s o n -sta te vo ltage [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR30SC060
012345
0
10
20
30
40
50
10V
12V
15V
VGE = 20V
[ Brake ]
Collector cu rre nt vs. Collector-E mitter voltage
Tj= 2 5°C( t yp.)
Collector current : Ic [ A ]
Collector - Emitte r voltage : VCE [ V ]
012345
0
10
20
30
40
50
10V
12V
15V
VGE = 20V
[ Brake ]
Collector cu rre nt vs. Collector-E mitter voltage
Tj= 125°C(ty p.)
Collector - Emitte r voltage : VCE [ V ]
Collector current : Ic [ A ]
01234
0
10
20
30
40
50
Tj= 25°C Tj= 125°C
[ Brake ]
Collector cu rre nt vs. Collector-E mitter voltage
VGE=15V (typ.)
Collector - Emitte r voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 10 A
Ic= 20 A
Ic= 40 A
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 2 5°C( t yp.)
Collector - Emit ter voltage : VCE [ V ]
Ga t e - Emitter vo ltage : V GE [ V ]
0 5 10 15 20 25 30 35
50
100
1000
5000
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitan ce : Cies, Coes, Cres [ pF ]
Collector - Emitte r voltage : VCE [ V ]
Coes
Cres
Cies
0 20406080100120
0
100
200
300
400
500
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=20A, Tj= 25°C
Ga t e cha rge : Qg [ nC ]
Collector - Emit ter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
IGBT Module 7MBR30SC060
Outline Drawings, mm
Equivalent Circuit Schematic
Marking : White
Marking : White
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brake ] [ Inverter ] [ T hermistor ]
14(Gb)
23(N)
2(S) 3(T)1(R)
21
(P) 26
25
22(P1)
7(B)
24(N1)
13(Gx)
19(Eu)
20
(Gu) 18
(Gv)
17(Ev)
4(U)
12(Gy) 11(Gz)
5(V)
15(Ew)
16
(Gw)
6(W)
10(En)
98
[ Converter ] [ T hyri stor ] [ Brake ] [ Inverter ] [ T hermistor ]
14(Gb)
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
