IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise. The built-in thermoelectric cooler (air cooled) allows a long exposure time achieving a high S/N even at low light levels. The cap uses a sapphire glass window hermetically welded for high reliability. Features Applications l Wide active area Pixel pitch: 50 m (S5930 series) 25 m (S5931 series) Pixel height: 2.5 mm l High UV sensitivity with good stability l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Start pulse and clock pulses are CMOS logic compatible l Built-in air-cooled thermoelectric cooler (setting temperature: 0 C) l Multichannel spectrophotometry l Image readout system Selection guide Active area size [mm (H) x mm (V)] S5930-256S 256 12.8 x 2.5 50 x 2500 S5930-512S 512 25.6 x 2.5 S5931-512S 512 12.8 x 2.5 25 x 2500 S5931-1024S 1024 25.6 x 2.5 In a d d itio n to S 5 9 3 0 /S 5 9 3 1 se rie s, H a m a m a tsu p ro vid e s S 8 3 8 2 /S 8 3 8 3 se ries th e rm o e le ctrica lly co o le d N M O S lin e a r im a g e se n so rs th a t o ffe r h igh e r se n sitivity in th e n e a r IR ra n g e . M a jo r ch a ra cte ristics o f S 8 3 8 2 /S 8 3 8 3 se rie s a re a lm o st id e n tica l w ith S 5 9 3 0 /S 5 9 3 1 se rie s e xce p t th a t th e p e a k se n sitivity w a ve le n g th is 7 5 0 n m (se e " S p e ctra l re sp o n se ") a n d th e sa tu ra tio n ch a rg e is 9 0 m lx . s. Type No. Number of pixels Pixel size [m (H) x m (V)] 1 NMOS linear image sensor Equivalent circuit st 1 Clock 2 Active area structure Digital shift register (MOS shift register) End of scan 2.5 mm Start Clock S5930/S5931 series Active video Active photodiode Vss b Saturation control gate Saturation control drain 1.0 m a Dummy video Oxidation silicon 1.0 m N type silicon 400 m Dummy diode KMPDC0020EA P type silicon S5930 series: a=50 m, b=45 m S5931 series: a=25 m, b=20 m KMPDA0132EA Absolute maximum ratings Parameter Input pulse (1, 2, st) voltage Operating temperature * 1 Symbol V Topr Condition Value 15 -40 to +65 -40 to +50 -40 to +85 Ambient temperature * 2 Chip temperature Unit V C C C Storage temperature Tstg *1 : N o co n d e n sa tio n *2 : Th e ch ip te m p e ra tu re sh o u ld b e m o n ito re d b a se d o n th e th erm isto r re sista n ce in o rd e r to ke e p th e ch ip te m p e ra tu re w ith in th e ra te d ra n g e . Specifications (Ta=25 C, unless otherwise noted) Parameter Symbol Pixel pitch Pixel height Spectral response range (10% of peak) Peak sensitivity wavelength Photodiode dark current * 3 25 C 0 C Photodiode capacitance *3 Saturation exposure *3*4 Saturation output charge *3 Photo response non-uniformity *5 - Min. - S5930 series Typ. Max. 50 2.5 - p ID Cph Esat Qsat PRNU 200 to 1000 - *3: Vb=2.0 V, V=5.0 V *4: 2856 K, tungsten lamp *5: 50% of saturation, excluding the start pixel and last pixel 2 Min. - 600 0.2 0.006 20 180 50 - S5931 series Typ. Max. 25 2.5 200 to 1000 0.6 0.018 3 - 600 0.1 0.003 10 180 25 - Unit m mm nm 0.3 0.009 3 nm pA pF mlx * s pC % S5930/S5931 series NMOS linear image sensor Electrical characteristics (Ta=25 C) Parameter Symbol C ondition Min. 4.5 0 4.5 0 1.5 - Clock pulse (1, 2) voltage High V1, V2 (H) Low V1, V2 (L) High Vs (H) Start pulse (st) voltage Low Vs (L) Video bias voltage*6 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd Clock pulse (1, 2) tr1, tr2 rise/fall time*7 tf1, tf2 Clock pulse (1, 2) pulse width tpw1, tpw2 Start pulse (st) rise/fall time trs, tfs Start pulse (st) pulse width tpws Start pulse (st) and clock pulse tov (2) overlap Clock pulse space*7 X1, X2 Data rate*8 f Video delay time Clock pulse (1, 2) line capacitance Saturation control gate (Vscg) line capacitance Video line capacitance tvd 50 % of saturation * 8* 9 C 5 V bias Cscg 5 V bias CV 2 V bias S5930 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb - Min. 4.5 0 4.5 0 1.5 - S5931 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb - Unit V V V V V V V - 20 - - 20 - ns 200 200 20 - - 200 200 20 - - ns ns ns 200 - - 200 - - ns 2000 - ns kHz ns trf - 20 0.1 120 (-256S) - 2000 - trf - 20 0.1 150 (-512S) - - 160 (-512S) - - 200 (-1024S) - ns - 36 (-256S) 67 (-512S) 20 (-256S) 35 (-512S) 11 (-256S) 20 (-512S) - - 50 (-512S) 100 (-1024S) 24 (-512S) 45 (-1024S) 16 (-512S) 30 (-1024S) - pF pF pF pF pF pF *6: V is input pulse voltage. *7: trf is the clock pulse rise or fall time. A clock pulse space of "rise time/fall time - 20 " ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns. *8: Vb=2.0 V, V=5.0 V *9: Measured with C7883 driver circuit. Dimensional outlines (unit: mm) S5930-512S, S5931-1024S 4.05 0.4*2 12.8 0.25 0.8*1 5.0 40.64 0.3 50.0 KMPDA0089JB 2.54 27.94 7.65 0.5 0.46 *1: Thickness of sapphire glass *2: Distance from the surface of sapphire glass to the chip surface 5.0 0.5 5.0 0.5 27.94 7.65 0.5 58.84 0.46 2.54 14.99 0.25 4.0 12.0 2.5 14.99 0.25 2.5 12.0 4.0 0.8*1 32.0 0.3 5.0 4.05 0.4*2 25.6 0.25 S5930-256S, S5931-512S *1: Thickness of sapphire glass *2: Distance from the surface of sapphire glass to the chip surface KMPDA0090JB 3 NMOS linear image sensor S5930/S5931 series Pin connection NC 1 24 st NC 2 23 1 Vss 3 22 2 Vscg 4 21 NC Vsub 5 20 NC NC 6 19 TE-cooler + Thermistor 7 18 TE-cooler - Thermistor 8 17 End of scan NC 9 16 NC Vscd 10 15 Dummy video NC 11 14 Active video NC 12 13 Vss Vss, Vsub and NC should be grounded. Electricity flows between the 20th pin and package metal. KMPDC0115EA Terminal Input or output 1, 2 Input (CMOS logic compatible) st Vss Vscg Input (CMOS logic compatible) Input Vscd Input Active video Output Dummy video Output Vsub - End of scan Output (CMOS logic compatible) NC TE-cooler Thermistor Input Output Spectral response (typical example) Description Pulses for operating the MOS shift register. The video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of 2 pulse. Pulse for starting the MOS shift register operation. The time interval between start pulses is equal to the signal accumulation time. Connected to the anode of each photodiode. This should be grounded. Used for restricting blooming. This should be grounded. Used for restricting blooming. This should be biased at a voltage equal to the video bias voltage. Video output signal. Connects to photodiode cathodes when the address is on. A positive voltage should be applied to the video line in order to use photodiodes with a reverse voltage. When the amplitude of 1 and 2 is 5 V, a video bias voltage of 2 V is recommended. This has the same structure as the active video, but is not connected to photodiodes, so only spike noise is output. This should be biased at a voltage equal to the active video or left as an open-circuit when not needed. Connected to the silicon substrate. This should be grounded. This should be pulled up at 5 V by using a 10 k resistor. This is a negative going pulse that appears synchronously with the 2 timing right after the last photodiode is addressed. Should be grounded. For sensor chip cooling For temperature control Output charge vs. exposure (Ta=25 C) 0.5 102 (Typ. Vb=2 V, V =5 V, light source: 2856 K) IR high-sensitivity type S8382/S8383 series 10 Output charge (pC) Photo sensitivity (A/W) Saturation charge 1 0.4 0.3 0.2 S5930 series 100 S5931 series -1 10 Saturation exposure 10-2 0.1 S5930/S5931 series 0 200 400 600 800 Wavelength (nm) 4 1000 1200 KMPDB0163EA 10-3 -5 10 -4 10 -3 10 -2 10 Exposure (lx * s) -1 10 0 10 KMPDB0164EA NMOS linear image sensor S5930/S5931 series Specifications of built-in TE-cooler (Typ.) Parameter Condition S5930-256S, S5931-512S S5930-512S, S5931-1024S Unit 1.0 Internal resistance Ta=25 C 1.3 Maximum current*10 2.8 Th=27 C 2.9 A Maximum voltage*11 3.5 Th=27 C 4.6 V Maximum heat absorption Tc=Th=27 C 6.0 8.0 W M axim um tem perature difference Th=27 C 67 C Maximum temperature of 85 C heat radiating side *10: Electrical current required to generate the maximum difference between temperatures (temperature Th on the heat radiating side and temperature Tc on the cooling side) at both ends of the thermoelectric cooler while heat is completely insulated. Cooling efficiency will drop if operated at a current higher than this value. *11: Voltage required for maximum current flow *12: Heat absorption amount when operated at maximum current. This is defined under the condition that the difference between the temperature Th on the heat radiating side and the temperature Tc on the cooling side is 0 C. S5930-512S, S5931-1024S S5930-256S, S5931-512S (Typ. Ta=25 C) (Typ. Ta=25 C) 5 30 20 3 10 2 0 -10 1 -10 -20 1.6 0 3 10 2 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Voltage (V) 20 Chip temperature (C) Voltage (V) 4 4 0 30 Voltage vs. current Chip temperature vs. current Voltage vs. current Chip temperature vs. current 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Chip temperature (C) 5 -20 1.6 Current (A) Current (A) KMPDB0326EA KMPDB0327EA Specifications of built-in temperature sensor A thermistor chip is built in the same package with a NMOS chip, and the chip temperature can be monitored with it, A relation between the thermistor resistance and absolute temperature is expressed by the following equation. 1 M RT1 = RT2 x exp BT1/ T2 (1/T1 - 1/T2) The characteristics of the thermistor used are as follows. R298=10 k B298/323=3450 K Resistance RT1: Resistance at absolute temperature T1 [K] RT2: Resistance at absolute temperature T2 [K] BT1/ T2: B constant [K] 100 k 10 k 220 240 260 280 300 Temperature (K) KMPDB0111EB 5 NMOS linear image sensor S5930/S5931 series Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If dust or dirt gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 C. (4) Precautions when mounting When installing the device into the socket on the printed circuit board, insert it in the correct orientation after checking the pin connections. Also take measures to protect this device from static electricity during this work. Never press on the surface of the device when inserting it into the circuit board, etc. Pressing on the sensor surface causes cracks and fractures in the window, possibly causing it to fall out and may lead to malfunctions. Insert the sensor into the socket while pressing on the sensor edges as shown in photo 1 or pressing on the screw hole sections as shown in photo 2. When securing the device by screws, place and secure it on a flat surface (flatness within 100 m). Use a socket that matches the pin size and specifications. Photo 1 Photo 2 (5) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (6) UV exposure This device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. 6 NMOS linear image sensor S5930/S5931 series NMOS multichannel detector head C5964 series The C5964 series is a family of multichannel detectors developed for spectrophotometry in the UV to near infrared range (up to 1000 nm). The C5964 series device incorporates a thermoelectricallycooled NMOS linear image sensor (S5930/S5931/S8382/S8383 series), low noise driver/amplifier circuit and highly stable temperature control circuit. It also operates from simple external signal inputs. Selection guide The C5964 series consists of the following models depending on the NMOS linear image sensor used. NMOS linear image sensor NMOS multichannel Pixel size Active area Type no. Number of pixels detector head [m (H) x m (V)] [mm (H) x mm (V)] C5964-0800 S5930-256S 256 12.8 x 2.5 50 x 2500 C5964-0900 S5930-512S 512 25.6 x 2.5 C5964-0910 S5931-512S 512 12.8 x 2.5 25 x 2500 C5964-1010 S5931-1024S 1024 25.6 x 2.5 C5964-0801 S8382-256S 256 12.8 x 2.5 50 x 2500 C5964-0901 S8382-512S 512 25.6 x 2.5 C5964-0911 S8383-512S 512 12.8 x 2.5 25 x 2500 C5964-1011 S8383-1024S 1024 25.6 x 2.5 Remark Standard type IR-enhanced type Multichannel detector head montroller C7557-01 The C7557-01 is specifically designed for basic control in multichannel photometry. When connected to a HAMAMATSU multichannel detector head and a personal computer, the C7557-01 allows easy control of the detector head and data acquisition by using dedicated software that comes with the unit. Connection example Shutter * timing pulse AC cable (100 to 240 V; included with the C7557-01) Trig. POWER Dedicated cable (Included with the C7557-01) SIGNAL I/O USB cable (Included with the C7557-01) TE CONTROL I/O C5964 series Controller for multichannel detector head C7557-01 PC (Windows 2000/XP/Vista) (USB 2.0) * Shutter, etc. are not available. KACCC0070ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. (c)2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1018E04 Apr. 2010 DN