PC48F4400P0VB0EH - Micron Technology Inc.

Micron Parallel NOR Flash Embedded

Memory (P30-65nm)

JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx,

RD48F4400P0VBQEx, RC48F4400P0VB0Ex,

PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx

Features

• High performance

– 100ns initial access for Easy BGA

– 110ns initial access for TSOP

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– 4-, 8-, 16-, and continuous word options for burst

mode

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 1.8V buffered programming at 1.14 MB/s (TYP)

using a 512-word buffer

• Architecture

– MLC: highest density at lowest cost

– Asymmetrically blocked architecture

– Four 32KB parameter blocks: top or bottom con-

figuration

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

– VCC (core) voltage: 1.7V to 2.0V

– VCCQ (I/O) voltage: 1.7V to 3.6V

– Standy current: 65µA (TYP) for 256Mb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

• Security

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

– Absolute write protection: VPP = VSS

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 25μs (TYP) program suspend

– 25μs (TYP) erase suspend

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Density and Packaging

– 56-lead TSOP package (256Mb only)

– 64-ball Easy BGA package (256Mb, 512Mb)

– QUAD+ and SCSP packages (256Mb, 512Mb)

– 16-bit wide data bus

• Quality and reliabilty

– JESD47 compliant

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Discrete and MCP Part Numbering Information

Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-

ages or for further information, contact your Micron sales representative. Part numbers can be verified at www.mi-

cron.com. Feature and specification comparison by device type is available at www.micron.com/products. Con-

tact the factory for devices not found.

Note: Not all part numbers listed here are available for ordering.

Table 1: Discrete Part Number Information

Part Number Category Category Details

Package JS = 56-lead TSOP, lead free

PC = 64-ball Easy BGA, lead-free

RC = 64-ball Easy BGA, leaded

Product Line 28F = Micron Flash memory

Density 256 = 256Mb

Product Family P30 (VCC = 1.7 to 2.0V; VCCQ = 1.7 to 3.6V)

Parameter Location B/T = Bottom/Top parameter

Lithography F = 65nm

Features *

Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-

mation. Sample part number: JS28F256P30BF*

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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Table 2: MCP Part Number Information

Part Number Category Category Details

Package RD = Micron MCP, leaded

PF = Micron MCP, lead-free

RC = 64-ball Easy BGA, leaded

PC = 64-ball Easy BGA, lead-free

Product Line 48F = Micron Flash memory only

Density 0 = No die

4 = 256Mb

Product Family P = Micron Flash memory (P30)

0 = No die

IO Voltage and Chip Configuration Z = Individual Chip Enables

V = Virtual Chip Enables

VCC = 1.7 to 2.0V; VCCQ = 1.7 to 3.6V

Parameter Location B/T = Bottom/Top parameter

Ballout Q = QUAD+

0 = Discrete

Lithography E = 65nm

Features *

Note: 1. The last digit is assigned randomly to cover packaging media, features, or other specific configuration infor-

mation. Sample part number: RC48F4400P0VB0E*

Table 3: Discrete and MCP Part Combinations

Package Density Packing Media Boot Configuration 1Part Number

JS 256Mb Tray B JS28F256P30BFE

Tape and Reel JS28F256P30BFF

Tray T JS28F256P30TFE

PC 256Mb Tray B PC28F256P30BFE

Tape and Reel PC28F256P30BFF

Tray T PC28F256P30TFE

512Mb

(256Mb/256Mb)

Tray B/T PC48F4400P0VB0EE

Tape and Reel PC48F4400P0VB0EF

PF 256Mb Tray B PF48F4000P0ZBQEF

Tray T PF48F4000P0ZTQEJ

512Mb

(256Mb/256Mb)

Tray B/T PF48F4400P0VBQEF

Tape and Reel PF48F4400P0VBQEK

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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Table 3: Discrete and MCP Part Combinations (Continued)

Package Density Packing Media Boot Configuration 1Part Number

RC 256Mb Tray B RC28F256P30BFE

Tray T RC28F256P30TFE

Tape and Reel RC28F256P30TFF

512Mb

(256Mb/256Mb)

Tray B/T RC48F4400P0VB0EJ

RD 512Mb

(256Mb/256Mb)

Tray B/T RD48F4400P0VBQEJ

Note: 1. Bottom Boot/Top Boot = B/T

Table 4: OTP Feature Part Combinations

Package Density Packing Media Boot Configuration 1Part Number

JS – – – –

PC 256Mb Tape and Reel B PC28F256P30BFR

PF – – – –

RC – – – –

RD – – – –

Notes: 1. This data sheet covers only standard parts. For OTP parts, contact your local Micron representative.

2. Bottom Boot/Top Boot = B/T

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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Contents

General Description ......................................................................................................................................... 9

Virtual Chip Enable Description ........................................................................................................................ 9

Memory Map ................................................................................................................................................. 12

Package Dimensions ....................................................................................................................................... 13

Pinouts and Ballouts ....................................................................................................................................... 17

Signal Descriptions ......................................................................................................................................... 21

Bus Operations ............................................................................................................................................... 24

Read .......................................................................................................................................................... 24

Write .......................................................................................................................................................... 24

Output Disable ........................................................................................................................................... 24

Standby ..................................................................................................................................................... 24

Reset .......................................................................................................................................................... 25

Device Command Codes ................................................................................................................................. 26

Device Command Bus Cycles .......................................................................................................................... 29

Read Operations ............................................................................................................................................. 31

Asynchronous Page Mode Read ................................................................................................................... 31

Asynchronous Single Word Read ................................................................................................................. 31

Synchronous Burst Mode Read ................................................................................................................... 32

Read CFI .................................................................................................................................................... 32

Read Device ID ........................................................................................................................................... 32

Device ID Codes ............................................................................................................................................. 33

Program Operations ....................................................................................................................................... 34

Word Programming (40h) ........................................................................................................................... 34

Buffered Programming (E8h, D0h) .............................................................................................................. 34

Buffered Enhanced Factory Programming (80h, D0h) ................................................................................... 35

Program Suspend ....................................................................................................................................... 37

Program Resume ........................................................................................................................................ 38

Program Protection .................................................................................................................................... 38

Erase Operations ............................................................................................................................................ 39

BLOCK ERASE Command ........................................................................................................................... 39

BLANK CHECK Command .......................................................................................................................... 39

ERASE SUSPEND Command ....................................................................................................................... 40

ERASE RESUME Command ........................................................................................................................ 40

Erase Protection ......................................................................................................................................... 40

Security Operations ........................................................................................................................................ 41

Block Locking ............................................................................................................................................. 41

BLOCK LOCK Command ............................................................................................................................ 41

BLOCK UNLOCK Command ....................................................................................................................... 41

BLOCK LOCK DOWN Command ................................................................................................................. 41

Block Lock Status ....................................................................................................................................... 41

Block Locking During Suspend ................................................................................................................... 42

Selectable OTP Blocks ................................................................................................................................. 43

Password Access ......................................................................................................................................... 43

Status Register ................................................................................................................................................ 44

Read Status Register ................................................................................................................................... 44

Clear Status Register ................................................................................................................................... 45

Configuration Register .................................................................................................................................... 46

Read Configuration Register ....................................................................................................................... 46

Read Mode ................................................................................................................................................. 46

Latency Count ............................................................................................................................................ 47

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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End of Wordline Considerations .................................................................................................................. 48

WAIT Signal Polarity and Functionality ........................................................................................................ 49

WAIT Delay ................................................................................................................................................ 50

Burst Sequence .......................................................................................................................................... 50

Clock Edge ................................................................................................................................................. 51

Burst Wrap ................................................................................................................................................. 51

Burst Length .............................................................................................................................................. 51

One-Time Programmable Registers ................................................................................................................. 52

Read OTP Registers ..................................................................................................................................... 52

Program OTP Registers ............................................................................................................................... 53

Lock OTP Registers ..................................................................................................................................... 53

Common Flash Interface ................................................................................................................................ 55

READ CFI Structure Output ........................................................................................................................ 55

Flowcharts ..................................................................................................................................................... 68

Power and Reset Specifications ....................................................................................................................... 77

Power Supply Decoupling ........................................................................................................................... 78

Maximum Ratings and Operating Conditions .................................................................................................. 79

DC Electrical Specifications ............................................................................................................................ 80

AC Test Conditions and Capacitance ............................................................................................................... 82

AC Read Specifications ................................................................................................................................... 84

AC Write Specifications ................................................................................................................................... 91

Program and Erase Characteristics .................................................................................................................. 97

Revision History ............................................................................................................................................. 98

Rev. D – 9/15 .............................................................................................................................................. 98

Rev. C – 12/13 ............................................................................................................................................. 98

Rev. B – 8/13 ............................................................................................................................................... 98

Rev. A – 10/12 ............................................................................................................................................. 98

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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List of Figures

Figure 1: 512Mb Easy BGA Block Diagram ...................................................................................................... 10

Figure 2: 512Mb QUAD+ Block Diagram ......................................................................................................... 11

Figure 3: Memory Map – 256Mb and 512Mb ................................................................................................... 12

Figure 4: 56-Pin TSOP – 14mm x 20mm .......................................................................................................... 13

Figure 5: 64-Ball Easy BGA – 10mm x 13mm x 1.2mm ...................................................................................... 14

Figure 6: 88-Ball QUAD+ – 8mm x 11mm x 1.0mm: 256Mb Only ...................................................................... 15

Figure 7: 88-Ball QUAD+ – 8mm x 11mm x 1.2mm: 512Mb Only ...................................................................... 16

Figure 8: 56-Lead TSOP Pinout – 256Mb ......................................................................................................... 17

Figure 9: 64-Ball Easy BGA Ballout – 256Mb, 512Mb ........................................................................................ 18

Figure 10: QUAD+ MCP Ballout ..................................................................................................................... 20

Figure 11: Example VPP Supply Connections ................................................................................................... 38

Figure 12: Block Locking State Diagram .......................................................................................................... 42

Figure 13: First Access Latency Count ............................................................................................................ 47

Figure 14: Example Latency Count Setting Using Code 3 ................................................................................. 48

Figure 15: End of Wordline Timing Diagram ................................................................................................... 48

Figure 16: OTP Register Map .......................................................................................................................... 53

Figure 17: Word Program Procedure ............................................................................................................... 68

Figure 18: Buffer Program Procedure .............................................................................................................. 69

Figure 19: Buffered Enhanced Factory Programming (BEFP) Procedure ........................................................... 70

Figure 20: Block Erase Procedure ................................................................................................................... 71

Figure 21: Program Suspend/Resume Procedure ............................................................................................ 72

Figure 22: Erase Suspend/Resume Procedure ................................................................................................. 73

Figure 23: Block Lock Operations Procedure ................................................................................................... 74

Figure 24: OTP Register Programming Procedure ............................................................................................ 75

Figure 25: Status Register Procedure .............................................................................................................. 76

Figure 26: Reset Operation Waveforms ........................................................................................................... 78

Figure 27: AC Input/Output Reference Timing ................................................................................................ 82

Figure 28: Transient Equivalent Load Circuit .................................................................................................. 82

Figure 29: Clock Input AC Waveform .............................................................................................................. 82

Figure 30: Asynchronous Single-Word Read (ADV# LOW) ................................................................................ 86

Figure 31: Asynchronous Single-Word Read (ADV# Latch) ............................................................................... 86

Figure 32: Asynchronous Page Mode Read ...................................................................................................... 87

Figure 33: Synchronous Single-Word Array or Nonarray Read .......................................................................... 88

Figure 34: Continuous Burst Read with Output Delay ..................................................................................... 89

Figure 35: Synchronous Burst Mode 4-Word Read ........................................................................................... 90

Figure 36: Write to Write Timing .................................................................................................................... 93

Figure 37: Asynchronous Read to Write Timing ............................................................................................... 93

Figure 38: Write to Asynchronous Read Timing ............................................................................................... 94

Figure 39: Synchronous Read to Write Timing ................................................................................................ 95

Figure 40: Write to Synchronous Read Timing ................................................................................................ 96

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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List of Tables

Table 1: Discrete Part Number Information ...................................................................................................... 2

Table 2: MCP Part Number Information ........................................................................................................... 3

Table 3: Discrete and MCP Part Combinations .................................................................................................. 3

Table 4: OTP Feature Part Combinations .......................................................................................................... 4

Table 5: Virtual Chip Enable Truth Table for 512Mb (QUAD+ Package) ............................................................. 10

Table 6: Virtual Chip Enable Truth Table for 512Mb (Easy BGA Packages) ........................................................ 10

Table 7: TSOP and Easy BGA Signal Descriptions ............................................................................................ 21

Table 8: QUAD+ SCSP Signal Descriptions ...................................................................................................... 22

Table 9: Bus Operations ................................................................................................................................. 24

Table 10: Command Codes and Definitions .................................................................................................... 26

Table 11: Command Bus Cycles ..................................................................................................................... 29

Table 12: Device ID Information .................................................................................................................... 32

Table 13: Device ID codes .............................................................................................................................. 33

Table 14: BEFP Requirements ........................................................................................................................ 36

Table 15: BEFP Considerations ...................................................................................................................... 36

Table 16: Status Register Description .............................................................................................................. 44

Table 17: Read Configuration Register ............................................................................................................ 46

Table 18: End of Wordline Data and WAIT State Comparison ........................................................................... 49

Table 19: WAIT Functionality Table ................................................................................................................ 49

Table 20: Burst Sequence Word Ordering ........................................................................................................ 50

Table 21: Example of CFI Output (x16 device) as a Function of Device and Mode ............................................. 55

Table 22: CFI Database: Addresses and Sections ............................................................................................. 56

Table 23: CFI ID String ................................................................................................................................... 56

Table 24: System Interface Information .......................................................................................................... 57

Table 25: Device Geometry ............................................................................................................................ 58

Table 26: Block Region Map Information ........................................................................................................ 58

Table 27: Primary Vendor-Specific Extended Query ........................................................................................ 59

Table 28: Optional Features Field ................................................................................................................... 60

Table 29: One Time Programmable (OTP) Space Information .......................................................................... 60

Table 30: Burst Read Information ................................................................................................................... 61

Table 31: Partition and Block Erase Region Information .................................................................................. 62

Table 32: Partition Region 1 Information: Top and Bottom Offset/Address ....................................................... 63

Table 33: Partition Region 1 Information ........................................................................................................ 63

Table 34: Partition Region 1: Partition and Erase Block Map Information ......................................................... 66

Table 35: CFI Link Information ...................................................................................................................... 67

Table 36: Additional CFI Link Field ................................................................................................................. 67

Table 37: Power and Reset .............................................................................................................................. 77

Table 38: Maximum Ratings ........................................................................................................................... 79

Table 39: Operating Conditions ...................................................................................................................... 79

Table 40: DC Current Characteristics .............................................................................................................. 80

Table 41: DC Voltage Characteristics .............................................................................................................. 81

Table 42: Test Configuration: Worst-Case Speed Condition .............................................................................. 82

Table 43: Capacitance .................................................................................................................................... 83

Table 44: AC Read Specifications .................................................................................................................... 84

Table 45: AC Write Specifications ................................................................................................................... 91

Table 46: Program and Erase Specifications .................................................................................................... 97

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Features

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General Description

The Micron Parallel NOR Flash memory is the latest generation of Flash memory devi-

ces. Benefits include more density in less space, high-speed interface device, and sup-

port for code and data storage. Features include high-performance synchronous-burst

read mode, fast asynchronous access times, low power, flexible security options, and

three industry-standard package choices. The product family is manufactured using Mi-

cron 65nm process technology.

The NOR Flash device provides high performance at low voltage on a 16-bit data bus.

Individually erasable memory blocks are sized for optimum code and data storage.

Upon initial power up or return from reset, the device defaults to asynchronous page-

mode read. Configuring the read configuration register enables synchronous burst-

mode reads. In synchronous burst mode, output data is synchronized with a user-sup-

plied clock signal. A WAIT signal provides easy CPU-to-flash memory synchronization.

In addition to the enhanced architecture and interface, the device incorporates technol-

ogy that enables fast factory PROGRAM and ERASE operations. Designed for low-volt-

age systems, the devIce supports READ operations with VCC at the low voltages, and

ERASE and PROGRAM operations with VPP at the low voltages or VPPH. Buffered en-

hanced factory programming (BEFP) provides the fastest Flash array programming per-

formance with VPP at VPPH, which increases factory throughput. With V PP at low voltag-

es, VCC and VPP can be tied together for a simple, ultra low-power design. In addition to

voltage flexibility, a dedicated VPP connection provides complete data protection when

VPP ≤ VPPLK.

A command user interface is the interface between the system processor and all inter-

nal operations of the device. The device automatically executes the algorithms and tim-

ings necessary for block erase and program. A status register indicates ERASE or PRO-

GRAM completion and any errors that may have occurred.

An industry-standard command sequence invokes program and erase automation.

Each ERASE operation erases one block. The erase suspend feature enables system soft-

ware to pause an ERASE cycle to read or program data in another block. Program sus-

pend enables system software to pause programming to read other locations. Data is

programmed in word increments (16 bits).

The protection register enables unique device identification that can be used to in-

crease system security. The individual block lock feature provides zero-latency block

locking and unlocking. The device includes enhanced protection via password access;

this new feature supports write and/or read access protection of user-defined blocks. In

addition, the device also provides the full-device OTP security feature.

Virtual Chip Enable Description

The 512Mb device employs a virtual chip enable feature, which combines two 256Mb

die with a common chip enable, F1-CE# for QUAD+ packages, or CE# for Easy BGA

packages. The maximum address bit is then used to select between the die pair with F1-

CE#/CE# asserted, depending upon the package option used. When F1-CE#/CE# is as-

serted and the maximum address bit is LOW, the lower parameter die is selected; when

F1-CE#/CE# is asserted and the maximum address bit is HIGH, the upper parameter die

is selected.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

General Description

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Table 5: Virtual Chip Enable Truth Table for 512Mb (QUAD+ Package)

Die Selected F1-CE# A24

Lower Param Die L L

Upper Param Die L H

Table 6: Virtual Chip Enable Truth Table for 512Mb (Easy BGA Packages)

Die Selected CE# A25

Lower Param Die L L

Upper Param Die L H

Figure 1: 512Mb Easy BGA Block Diagram

Parameter Configuration

Easy BGA (Dual Die) Top/Bottom

Bottom Parameter Die

Top Parameter Die

CE#

A[MAX:1]

ADV#

CLK

WE#

OE#

WP#

WAIT

DQ[15:0]

RST#

VPP

VCCQ

VCC

VSS

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Virtual Chip Enable Description

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Figure 2: 512Mb QUAD+ Block Diagram

Parameter Configuration

QUAD+ 512Mb (Dual Die) Top/Bottom

Bottom Parameter Die

256Mb

Top Parameter Die

256Mb

F1-CE#

A[MAX:0]

ADV#

CLK

WE#

OE#

WP#

WAIT

DQ[15:0]

RST#

VPP

VCCQ

VCC

VSS

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Virtual Chip Enable Description

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Memory Map

Figure 3: Memory Map – 256Mb and 512Mb

FF0000 - FF3FFF

FF4000 - FF7FFF

FF8000 - FFBFFF

FFC000 - FFFFFF

FE0000 - FEFFFF

16 KWord Block 255

16 KWord Block 256

16 KWord Block 257

16 KWord Block 258

64 KWord Block 254

010000 - 01FFFF

000000 - 00FFFF

64 KWord Block 1

64 KWord Block 0

Top Boot 256Mb, World-Wide x16 Mode

A[24:1] 256Mb, Easy BGA, TSOP

A[23:0] 256Mb, Quad+

3F0000 - 3FFFFF

7F0000 - 7FFFFF

FF0000 - FFFFFF

000000 - 003FFF

004000 - 007FFF

008000 - 00BFFF

00C000 - 00FFFF

010000 - 01FFFF

020000 - 02FFFF

16 KWord Block 0

16 KWord Block 1

16 KWord Block 2

16 KWord Block 3

64 KWord Block 4

64 KWord Block 5

64 KWord Block 130

64 KWord Block 258

64 KWord Block 66

Bottom Boot 256Mb, World-Wide x16 Mode

A[24:1] 256Mb, Easy BGA, TSOP

A[23:0] 256Mb, Quad+

256Mb 256Mb

000000 - 003FFF

004000 - 007FFF

008000 - 00BFFF

00C000 - 00FFFF

010000 - 01FFFF

020000 - 02FFFF

16 KWord Block 0

16 KWord Block 1

16 KWord Block 2

16 KWord Block 3

64 KWord Block 4

64 KWord Block 5

1FF0000 - 1FF3FFF

1FF4000 - 1FF7FFF

1FF8000 - 1FFBFFF

1FFC000 - 1FFFFFF

1FE0000 - 1FEFFFF

1FD0000 - 1FDFFFF

16 KWord Block 514

16 KWord Block 515

16 KWord Block 516

16 KWord Block 517

64 KWord Block 513

64 KWord Block 512

A[25:1] 512Mb (256Mb/256Mb), Easy BGA, TSOP

A[24:0] 512Mb (256Mb/256Mb), Quad+

512Mb (256Mb/256Mb), World Wide x16 Mode

512Mb (256Mb/256Mb)

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Memory Map

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Package Dimensions

Figure 4: 56-Pin TSOP – 14mm x 20mm

See Detail A

0.5 TYP

14.00 ±0.2

0.25 ±0.1

1.20 MAX

18.4 ±0.2 0.995 ±0.03

20 ±0.2

0.22 ±0.05

Detail A

0.60 ±0.10

0.05 MIN

0.10

Seating

plane

Pin #1 index

See notes 2

See note 2 See note 2

See note 2

0.15 ±0.05

3° +2°

-3°

Notes: 1. All dimensions are in millimeters. Drawing not to scale.

2. One dimple on package denotes pin 1; if two dimples, then the larger dimple denotes

pin 1. Pin 1 will always be in the upper left corner of the package, in reference to the

product mark.

3. For the lead width value of 0.22 ±0.05, there is also a legacy value of 0.15 ±0.05.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Package Dimensions

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Figure 5: 64-Ball Easy BGA – 10mm x 13mm x 1.2mm

Ball A1 ID

0.78 TYP 0.25 MIN

Seating

plane

0.1

1.20 MAX

1.00 TYP

8 7 6 5 4 3 2 1

3.0 ±0.1

10 ±0.1

64X Ø0.43 ±0.1

1.00 TYP

13 ±0.1

1.5 ±0.1 Ball A1 ID

Note: 1. All dimensions are in millimeters. Drawing not to scale.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Package Dimensions

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Figure 6: 88-Ball QUAD+ – 8mm x 11mm x 1.0mm: 256Mb Only

Top View - Ball Down Bottom View - Ball Up

12345678

1 2 3 4 5 6 7 8

1.00 MAX

0.10 MAX

0.20 MIN

0.740 TYP

0.80 TYP

0.375 ±0.05

1.20 ±0.10

1.10 ±0.10

11.00 ±0.10

8.00 ±0.10

Note: 1. All dimensions are in millimeters. Drawing not to scale.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Package Dimensions

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Figure 7: 88-Ball QUAD+ – 8mm x 11mm x 1.2mm: 512Mb Only

Top View - Ball Down Bottom View - Ball Up

12345678

1 2 3 4 5 6 7 8

1.20 MAX

0.10 MAX

0.20 MIN

0.860 TYP

0.80 TYP

0.375 ±0.050

1.20 ±0.10

1.10 ±0.10

11.00 ±0.10

8.00 ±0.10

Note: 1. All dimensions are in millimeters. Drawing not to scale.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Package Dimensions

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Pinouts and Ballouts

Figure 8: 56-Lead TSOP Pinout – 256Mb

56-Lead TSOP Pinout

14mm x 20mm

Top View

A 14

A 13

A 12

A 10

A 9

A 11

VSS

A 23

A 21

A 22

RFU

WP #

A 20

WE #

A 19

A 8

A 7

A 18

A 6

A 4

A 3

A 5

A 2

RFU

VSS

A 24

WAIT

DQ15

DQ7

A17

DQ14

DQ13

DQ5

DQ 6

DQ12

ADV #

CLK

DQ4

RST#

A 16

DQ 3

VPP

DQ10

VCCQ

DQ 9

DQ 2

DQ1

DQ 0

VCC

DQ 8

OE#

CE#

A 1

VSS

A 15

DQ11

Notes: 1. A1 is the least significant address bit.

2. A24 is valid for 256Mb densities; otherwise, it is a no connect (NC).

3. No internal connection on Pin 13; it may be driven or floated. For legacy designs, it is a

VCC pin and can be tied to VCC.

4. One dimple on package denotes Pin 1 which will always be in the upper left corner of

the package, in reference to the product mark.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Pinouts and Ballouts

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Figure 9: 64-Ball Easy BGA Ballout – 256Mb, 512Mb

2 3 4 56 7

A2 VSS A9 A14CE # A19 RFUA25

RFU VSS VCC DQ13VSS DQ7 A24VSS

A3 A7 A10 A15A12 A20 A21WP#

A4 A5 A11 VCCQ

RST # A16 A17VCCQ

RFUDQ8 DQ1 DQ9 DQ4DQ3 DQ15CLK

RFU OE#DQ0 DQ10 DQ12DQ11 WAITADV#

WE#A23 RFU DQ2 DQ5VCCQ DQ14DQ6

A1 A6 A8 A13VPP A18 A22VCC

Notes: 1. A1 is the least significant address bit.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Pinouts and Ballouts

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2. A24 is valid for 256Mb densities and above; otherwise, it is a no connect (NC).

3. A25 is valid for 512Mb densities; otherwise, it is a no connect.

4. One dimple on package denotes A1 pin, which will always be in the upper-left corner of

the package, in reference to the product mark.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Pinouts and Ballouts

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p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Figure 10: QUAD+ MCP Ballout

Pin 1

1 2 3 4 5 6 7 8

ADU DU Depop Depop Depop Depop DU DU A

BA4 A18 A19 VSS VCC VCC A21 A11 B

CA5 RFU A23 VSS RFU CLK A22 A12 C

DA3 A17 A24 VPP RFU RFU A9 A13 D

EA2 A7 WP# ADV# A20 A10 A15 E

FA1 A6 RFU RST# WE# A8 A14 A16 F

GA0 DQ8 DQ2 DQ10 DQ5 DQ13 WAIT F2-CE# G

HRFU DQ0 DQ1 DQ3 DQ12 DQ14 DQ7 F2-OE# H

JRFU F1-OE# DQ9 DQ11 DQ4 DQ6 DQ15 VCCQ J

KF1-CE# RFU RFU RFU RFU VCC VCCQ RFU K

LVSS VSS VCCQ VCC VSS VSS VSS VSS L

MDU DU Depop Depop Depop Depop DU DU M

1 2 3 4 5 6 7 8

Control Signals

Reserved for Future Use Data

Do Not Use Power/Ground

Address

Top View - Ball Side Down

Legends : De-Populated Ball

RFU

Notes: 1. A23 is valid for 256Mb densities and above; otherwise, it is a no connect.

2. A24 is valid for 512Mb densities and above; otherwise, it is a no connect.

3. F2-CE# and F2-OE# are no connect for all densities.

4. A0 is LSB for Address.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Pinouts and Ballouts

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Signal Descriptions

Table 7: TSOP and Easy BGA Signal Descriptions

Symbol Type Name and Function

A[MAX:1] Input Address inputs: Device address inputs.

Note: Unused active address pins should not be left floating; tie them to VCCQ or VSS ac-

cording to specific design requirements.

ADV# Input Address valid: Active LOW input. During synchronous READ operations, addresses are

latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# LOW, which-

ever occurs first. In asynchronous mode, the address is latched when ADV# goes HIGH or

continuously flows through if ADV# is held LOW.

Note: Designs not using ADV# must tie it to VSS to allow addresses to flow through.

CE# Input Chip enable: Active LOW input. CE# LOW selects the associated die. When asserted, inter-

nal control logic, input buffers, decoders, and sense amplifiers are active. When de-asser-

ted, the associated die is deselected, power is reduced to standby levels, data and wait

outputs are placed in High-Z.

Note: CE# must be driven HIGH when device is not in use.

CLK Input Clock: Synchronizes the device with the system bus frequency in synchronous-read mode.

During synchronous READs, addresses are latched on the rising edge of ADV#, or on the

next valid CLK edge with ADV# LOW, whichever occurs first.

Note:Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.

OE# Input Output enable: Active LOW input. OE# LOW enables the device’s output data buffers

during READ cycles. OE# HIGH places the data outputs and WAIT in High-Z.

RST# Input Reset: Active LOW input. RST# resets internal automation and inhibits WRITE operations.

This provides data protection during power transitions. RST# HIGH enables normal opera-

tion. Exit from reset places the device in asynchronous read array mode.

WP# Input Write protect: Active LOW input. WP# LOW enables the lock-down mechanism. Blocks in

lock-down cannot be unlocked with the Unlock command. WP# HIGH overrides the lock-

down function enabling blocks to be erased or programmed using software commands.

Note: Designs not using WP# for protection could tie it to VCCQ or VSS without additional

capacitor.

WE# Input Write enable: Active LOW input. WE# controls writes to the device. Address and data are

latched on the rising edge of WE# or CE#, whichever occurs first.

VPP Power/Input Erase and program power: A valid voltage on this pin allows erasing or programming.

Memory contents cannot be altered when VPP ≤ VPPLK. Block erase and program at invalid

VPP voltages should not be attempted.

Set VPP = VPPL for in-system PROGRAM and ERASE operations. To accommodate resistor or

diode drops from the system supply, the VIH level of VPP can be as low as VPPL,min . VPP must

remain above VPPL,min to perform in-system modification. VPP may be 0V during READ op-

erations.

VPP can be connected to 9V for a cumulative total not to exceed 80 hours. Extended use of

this pin at 9V may reduce block cycling capability.

DQ[15:0] Input/Output Data input/output: Inputs data and commands during WRITE cycles; outputs data during

memory, status register, protection register, and read configuration register reads. Data

balls float when the CE# or OE# are de-asserted. Data is internally latched during writes.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Signal Descriptions

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Table 7: TSOP and Easy BGA Signal Descriptions (Continued)

Symbol Type Name and Function

WAIT Output Wait: Indicates data valid in synchronous array or non-array burst reads. Read configura-

tion register bit 10 (RCR.10, WT) determines its polarity when asserted. This signal's active

output is VOL or VOH when CE# and OE# are VIL. WAIT is High-Z if CE# or OE# is VIH.

• In synchronous array or non-array read modes, this signal indicates invalid data when as-

serted and valid data when de-asserted.

• In asynchronous page mode, and all write modes, this signal is de-asserted.

VCC Power Device core power supply: Core (logic) source voltage. Writes to the array are inhibited

when VCC ≤ VLKO. Operations at invalid VCC voltages should not be attempted.

VCCQ Power Output power supply: Output-driver source voltage.

VSS Power Ground: Connect to system ground. Do not float any VSS connection.

RFU — Reserved for future use: Reserved by Micron for future device functionality and en-

hancement. These should be treated in the same way as a DU signal.

DU — Do not use: Do not connect to any other signal, or power supply; must be left floating.

NC — No connect: No internal connection; can be driven or floated.

Table 8: QUAD+ SCSP Signal Descriptions

Symbol Type Name and Function

A[MAX:0] Input Address inputs: Device address inputs. 256Mb: A[23:0]; 512Mb: A[24:0]. Note: The virtual

selection of the 256Mb top parameter die in the dual-die 512Mb configuration is accom-

plished by setting A24 HIGH.

Note: The address pins unused in design should not be left floating; tie them to VCCQ or

VSS according to specific design requirements. Note: When handling the QUAD + SCSP

package, note that LSB is A0; address conversion is necessary.

ADV# Input Address valid: Active LOW input. During synchronous READ operations, addresses are

latched on the rising edge of ADV#, or on the next valid CLK edge with ADV# LOW, which-

ever occurs first.

In asynchronous mode, the address is latched when ADV# goes HIGH or continuously flows

through if ADV# is held LOW.

Note: Designs not using ADV# must tie it to VSS to allow addresses to flow through.

F1-CE# Input Flash chip enable: Active LOW input. F1-CE# LOW selects the associated die. When asser-

ted, internal control logic, input buffers, decoders, and sense amplifiers are active. When

de-asserted, the associated die is deselected, power is reduced to standby levels, data and

wait outputs are placed in High-Z.

Note: F1-CE# must be driven HIGH when device is not in use.

CLK Input Clock: Synchronizes the device with the system bus frequency in synchronous-read mode.

During synchronous READ operations, addresses are latched on the rising edge of ADV#,

or on the next valid CLK edge with ADV# LOW, whichever occurs first.

Note: Designs not using CLK for synchronous read mode must tie it to VCCQ or VSS.

F1-OE# Input Output enable: Active LOW input. F1-OE# LOW enables the device’s output data buffers

during READ cycles. F1-OE# HIGH places the data outputs and wait in High-Z.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Signal Descriptions

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p30_65nm_MLC_256Mb-512mb.pdf - Rev. D 9/15 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Table 8: QUAD+ SCSP Signal Descriptions (Continued)

Symbol Type Name and Function

RST# Input Reset: Active LOW input. RST# resets internal automation and inhibits WRITE operations.

This provides data protection during power transitions. RST# HIGH enables normal opera-

tion. Exit from reset places the device in asynchronous read array mode.

WE# Input Write enable: Active LOW input. WE# controls writes to the device. Address and data are

latched on the rising edge of WE# or CE#, whichever occurs first.

WP# Input Write protect: Active LOW input. WP# LOW enables the lock-down mechanism. Blocks in

lock-down cannot be unlocked with the UNLOCK command. WP# HIGH overrides the lock-

down function enabling blocks to be erased or programmed using software commands.

Note: Designs not using WP# for protection could tie it to VCCQ or VSS without additional

capacitor.

VPP Power/lnput Erase and program power: A valid voltage on this pin allows erasing or programming.

Memory contents cannot be altered when VPP ≤ VPPLK. Block erase and program at invalid

VPP voltages should not be attempted.

Set VPP = VPPL for in-system PROGRAM and ERASE operations. To accommodate resistor or

diode drops from the system supply, the VIH level of VPP can be as low as VPPL,min . VPP must

remain above VPPL,min to perform in-system flash modification. VPP may be 0V during READ

operations.

VPPH can be applied to main blocks for 1000 cycles maximum and to parameter blocks for

2500 cycles. VPP can be connected to 9V for a cumulative total not to exceed 80 hours. Ex-

tended use of this pin at 9V may reduce block cycling capability.

DQ[15:0] Input/Output Data input/output: Inputs data and commands during WRITE cycles; outputs data during

memory, status register, protection register, and read configuration register reads. Data

balls float when the CE# or OE# are de-asserted. Data is internally latched during writes.

WAIT Output Wait: Indicates data valid in synchronous array or non-array burst reads. Read configura-

tion register bit 10 (RCR.10, WT) determines its polarity when asserted. The active output is

VOL or VOH when CE# and OE# are VIL. WAIT is High-Z if CE# or OE# is VIH.

• In synchronous array or non-array read modes, WAIT indicates invalid data when asser-

ted and valid data when de-asserted.

• In asynchronous page mode, and all write modes, WAIT is de-asserted.

VCC Power Device core power supply: Core (logic) source voltage. Writes to the array are inhibited

when VCC ≤ VLKO. Operations at invalid VCC voltages should not be attempted.

VCCQ Power Output power supply: Output driver source voltage.

VSS Power Ground: Connect to system ground. Do not float any VSS connection.

RFU — Reserved for future use: Reserved by Micron for future device functionality and en-

hancement. These should be treated in the same way as a DU signal.

DU — Do not use: Do not connect to any other signal, or power supply; must be left floating.

NC — No connect: No internal connection; can be driven or floated.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Signal Descriptions

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Bus Operations

CE# LOW and RST# HIGH enable READ operations. The device internally decodes up-

per address inputs to determine the accessed block. ADV# LOW opens the internal ad-

dress latches. OE# LOW activates the outputs and gates selected data onto the I/O bus.

Bus cycles to/from the device conform to standard microprocessor bus operations. Bus

operations and the logic levels that must be applied to the device control signal inputs

are shown here.

Table 9: Bus Operations

Bus Operation RST# CLK ADV# CE# OE# WE# WAIT DQ[15:0] Notes

READ Asynchronous H X L L L H De-asserted Output -

Synchronous H Run-

ning

L L L H Driven Output -

WRITE H X L L H L High-Z Input 1

OUTPUT DISABLE H X X L H H High-Z High-Z 2

STANDBY H X X H X X High-Z High-Z 2

RESET L X X X X X High-Z High-Z 2, 3

Notes: 1. Refer to the Device Command Bus Cycles for valid DQ[15:0] during a WRITE operation.

2. X = "Don’t Care" (H or L).

3. RST# must be at VSS ± 0.2V to meet the maximum specified power-down current.

Read

To perform a READ operation, RST# and WE# must be de-asserted while CE# and OE#

are asserted. CE# is the device-select control. When asserted, it enables the device. OE#

is the data-output control. When asserted, the addressed flash memory data is driven

onto the I/O bus.

Write

To perform a WRITE operation, both CE# and WE# are asserted while RST# and OE# are

de-asserted. During a WRITE operation, address and data are latched on the rising edge

of WE# or CE#, whichever occurs first. The Command Bus Cycles table shows the bus

cycle sequence for each of the supported device commands, while the Command Codes

and Definitions table describes each command.

Note: WRITE operations with invalid VCC and/or VPP voltages can produce spurious re-

sults and should not be attempted.

Output Disable

When OE# is de-asserted, device outputs DQ[15:0] are disabled and placed in High-Z

state, WAIT is also placed in High-Z.

Standby

When CE# is de-asserted the device is deselected and placed in standby, substantially

reducing power consumption. In standby, the data outputs are placed in High-Z, inde-

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Bus Operations

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pendent of the level placed on OE#. Standby current (ICCS) is the average current meas-

ured over any 5ms time interval, 5μs after CE# is de-asserted. During standby, average

current is measured over the same time interval 5μs after CE# is de-asserted.

When the device is deselected (while CE# is de-asserted) during a PROGRAM or ERASE

operation, it continues to consume active power until the PROGRAM or ERASE opera-

tion is completed.

Reset

As with any automated device, it is important to assert RST# when the system is reset.

When the system comes out of reset, the system processor attempts to read from the

device if it is the system boot device. If a CPU reset occurs with no device reset, improp-

er CPU initialization may occur because the device may be providing status informa-

tion rather than array data. Micron devices enable proper CPU initialization following a

system reset through the use of the RST# input. RST# should be controlled by the same

low-true reset signal that resets the system CPU.

After initial power-up or reset, the device defaults to asynchronous read array mode,

and the status register is set to 0x80. Asserting RST# de-energizes all internal circuits,

and places the output drivers in High-Z. When RST# is asserted, the device shuts down

the operation in progress, a process which takes a minimum amount of time to com-

plete. When RST# has been de-asserted, the device is reset to asynchronous read array

state.

When device returns from a reset (RST# de-asserted), a minimum wait is required be-

fore the initial read access outputs valid data. Also, a minimum delay is required after a

reset before a write cycle can be initiated. After this wake-up interval passes, normal op-

eration is restored.

Note: If RST# is asserted during a PROGRAM or ERASE operation, the operation is ter-

minated and the memory contents at the aborted location (for a program) or block (for

an erase) are no longer valid, because the data may have been only partially written or

erased.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Bus Operations

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Device Command Codes

The system CPU provides control of all in-system READ, WRITE, and ERASE operations

of the device via the system bus. The device manages all block-erase and word-program

algorithms.

Device commands are written to the CUI to control all device operations. The CUI does

not occupy an addressable memory location; it is the mechanism through which the

device is controlled.

Note: For a dual device, all setup commands should be re-issued to the device when a

different die is selected.

Table 10: Command Codes and Definitions

Mode Device Mode Code Description

Read Read array 0xFF Places the device in read array mode. Array data is output on DQ[15:0].

Read status register 0x70 Places the device in read status register mode. The device enters this

mode after a PROGRAM or ERASE command is issued. Status register

data is output on DQ[7:0].

Read device ID

or read configura-

tion register

0x90 Places device in read device identifier mode. Subsequent reads output

manufacturer/device codes, configuration register data, block lock sta-

tus, or protection register data on DQ[15:0].

Read CFI 0x98 Places the device in read CFI mode. Subsequent reads output CFI infor-

mation on DQ[7:0].

Clear status register 0x50 The device sets status register error bits. The clear status register com-

mand is used to clear the SR error bits.

Write Word program setup 0x40 First cycle of a 2-cycle programming command; prepares the CUI for a

WRITE operation. On the next write cycle, the address and data are

latched and the device executes the programming algorithm at the ad-

dressed location. During PROGRAM operations, the device responds

only to READ STATUS REGISTER and PROGRAM SUSPEND commands.

CE# or OE# must be toggled to update the status register in asynchro-

nous read. CE# or ADV# must be toggled to update the status register

data for synchronous non-array reads. The READ ARRAY command

must be issued to read array data after programming has finished.

Buffered program 0xE8 This command loads a variable number of words up to the buffer size

of 512 words onto the program buffer.

Buffered program

confirm

0xD0 The CONFIRM command is issued after the data streaming for writing

into the buffer is completed. The device then performs the buffered

program algorithm, writing the data from the buffer to the memory

array.

BEFP setup 0x80 First cycle of a two-cycle command; initiates buffered enhanced factory

program mode (BEFP). The CUI then waits for the BEFP CONFIRM com-

mand, 0xD0, that initiates the BEFP algorithm. All other commands are

ignored when BEFP mode begins.

BEFP confirm 0xD0 If the previous command was BEFP SETUP (0x80), the CUI latches the

address and data, and prepares the device for BEFP mode.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Device Command Codes

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Table 10: Command Codes and Definitions (Continued)

Mode Device Mode Code Description

Erase Block erase setup 0x20 First cycle of a two-cycle command; prepares the CUI for a BLOCK

ERASE operation. The device performs the erase algorithm on the

block addressed by the ERASE CONFIRM command. If the next com-

mand is not the ERASE CONFIRM (0xD0) command, the CUI sets status

mode.

Block erase confirm 0xD0 If the first command was BLOCK ERASE SETUP (0x20), the CUI latches

the address and data, and the device erases the addressed block. Dur-

ing BLOCK ERASE operations, the device responds only to READ STATUS

to update the status register in asynchronous read. CE# or ADV# must

be toggled to update the status register data for synchronous non-ar-

ray reads.

Suspend Program or erase

suspend

0xB0 This command issued to any device address initiates a suspend of the

currently-executing program or BLOCK ERASE operation. The status

(program suspended) or SR6 (erase suspended), along with SR7 (ready).

The device remains in the suspend mode regardless of control signal

states (except for RST# asserted).

Suspend resume 0xD0 This command issued to any device address resumes the suspended

PROGRAM or BLOCK ERASE operation.

Protection Block lock setup 0x60 First cycle of a two-cycle command; prepares the CUI for block lock con-

figuration changes. If the next command is not BLOCK LOCK (0x01),

BLOCK UNLOCK (0xD0), or BLOCK LOCK DOWN (0x2F), the CUI sets sta-

tus register bits SR5 and SR4, indicating a command sequence error.

Block lock 0x01 If the previous command was BLOCK LOCK SETUP (0x60), the addressed

block is locked.

Block unlock 0xD0 If the previous command was BLOCK LOCK SETUP (0x60), the addressed

block is unlocked. If the addressed block is in a lock down state, the op-

eration has no effect.

Block lock down 0x2F If the previous command was BLOCK LOCK SETUP (0x60), the addressed

block is locked down.

OTP register or lock

0xC0 First cycle of a two-cycle command; prepares the device for a OTP REG-

ISTER or LOCK REGISTER PROGRAM operation. The second cycle latches

the register address and data, and starts the programming algorithm

to program data the OTP array.

Configuration Read configuration

0x60 First cycle of a two-cycle command; prepares the CUI for device read

configuration. If the SET READ CONFIGURATION REGISTER command

(0x03) is not the next command, the CUI sets status register bits SR4

and SR5, indicating a command sequence error.

Read configuration

0x03 If the previous command was READ CONFIGURATION REGISTER SETUP

(0x60), the CUI latches the address and writes A[16:1] to the read con-

figuration register for Easy BGA and TSOP, A[15:0] for QUAD+. Follow-

ing a CONFIGURE READ CONFIGURATION REGISTER command, subse-

quent READ operations access array data.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Device Command Codes

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Table 10: Command Codes and Definitions (Continued)

Mode Device Mode Code Description

Blank Check Block blank check 0xBC First cycle of a two-cycle command; initiates the BLANK CHECK opera-

tion on a main block.

Block blank check

confirm

0xD0 Second cycle of blank check command sequence; it latches the block

address and executes blank check on the main array block.

EFI Extended function

interface

0xEB First cycle of a multiple-cycle command; initiate operation using exten-

ded function interface. The second cycle is a Sub-Op-Code, the data

written on third cycle is one less than the word count; the allowable

value on this cycle are 0–511. The subsequent cycles load data words in-

to the program buffer at a specified address until word count is ach-

ieved.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Device Command Codes

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Device Command Bus Cycles

Device operations are initiated by writing specific device commands to the command

user interface (CUI). Several commands are used to modify array data including WORD

PROGRAM and BLOCK ERASE commands. Writing either command to the CUI initiates

a sequence of internally timed functions that culminate in the completion of the re-

quested task. However, the operation can be aborted by either asserting RST# or by is-

suing an appropriate suspend command.

Table 11: Command Bus Cycles

Mode Command

Bus

Cycles

First Bus Cycle Second Bus Cycle

Op Addr1Data2Op Addr1Data2

Read READ ARRAY 1 WRITE DnA 0xFF – – –

READ DEVICE IDENTIFIER ≥2 WRITE DnA 0x90 READ DBA + IA ID

READ CFI ≥2 WRITE DnA 0x98 READ DBA + CFI-A CFI-D

READ STATUS REGISTER 2 WRITE DnA 0x70 READ DnA SRD

CLEAR STATUS REGISTER 1 WRITE DnA 0x50 – – –

Program WORD PROGRAM 2 WRITE WA 0x40 WRITE WA WD

BUFFERED PROGRAM3>2 WRITE WA 0xE8 WRITE WA N - 1

BUFFERED ENHANCED

FACTORY PROGRAM

(BEFP)4

>2 WRITE WA 0x80 WRITE WA 0xD0

Erase BLOCK ERASE 2 WRITE BA 0x20 WRITE BA 0xD0

Suspend PROGRAM/ERASE SUSPEND 1 WRITE DnA 0xB0 – – –

PROGRAM/ERASE RESUME 1 WRITE DnA 0xD0 – – –

Protection BLOCK LOCK 2 WRITE BA 0x60 WRITE BA 0x01

BLOCK UNLOCK 2 WRITE BA 0x60 WRITE BA 0xD0

BLOCK LOCK DOWN 2 WRITE BA 0x60 WRITE BA 0x2F

PROGRAM OTP REGISTER 2 WRITE PRA 0xC0 WRITE OTP-RA OTP-D

PROGRAM LOCK REGISTER 2 WRITE LRA 0xC0 WRITE LRA LRD

Configuration CONFIGURE READ

CONFIGURATION REGISTER

2 WRITE RCD 0x60 WRITE RCD 0x03

Blank Check BLOCK BLANK CHECK 2 WRITE BA 0xBC WRITE BA D0

EFI EXTENDED FUNCTION

INTERFACE 5

>2 WRITE WA 0xEB Write WA Sub-Op code

Notes: 1. First command cycle address should be the same as the operation’s target address. DBA

= Device base address (needed for dual die 512Mb device); DnA = Address within the de-

vice; IA = Identification code address offset; CFI-A = Read CFI address offset; WA = Word

address of memory location to be written; BA = Address within the block; OTP-RA = Pro-

tection register address; LRA = Lock register address; RCD = Read configuration register

data on A[16:1] for Easy BGA and TSOP, A[15:0] for QUAD+ package.

2. ID = Identifier data; CFI-D = CFI data on DQ[15:0]; SRD = Status register data; WD = Word

data; N = Word count of data to be loaded into the write buffer; OTP-D = Protection

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Device Command Bus Cycles

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3. The second cycle of the BUFFERED PROGRAM command is the word count of the data to

be loaded into the write buffer. This is followed by up to 512 words of data. Then the

CONFIRM command (0xD0) is issued, triggering the array programming operation.

4. The CONFIRM command (0xD0) is followed by the buffer data.

5. The second cycle is a Sub-Op-Code, the data written on third cycle is N-1; 1≤ N ≤ 512.

The subsequent cycles load data words into the program buffer at a specified address

until word count is achieved, after the data words are loaded, the final cycle is the con-

firm cycle 0xD0).

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Device Command Bus Cycles

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Read Operations

The device supports two read modes: asynchronous page mode and synchronous burst

mode. Asynchronous page mode is the default read mode after device power-up or a re-

set. Under asynchronous page mode, the device can also perform single word read. The

read configuration register must be configured to enable synchronous burst reads of the

array.

The device can be in any of four read states: read array, read identifier, read status, or

read CFI. Upon power-up, or after a reset, the device defaults to read array. To change

the read state, the appropriate READ command must be written to the device.

Asynchronous Page Mode Read

Following a device power-up or reset, asynchronous page mode is the default read

mode and the device is set to read array. However, to perform array reads after any other

device operation (WRITE operation), the READ ARRAY command must be issued in or-

der to read from the array.

Asynchronous page mode reads can only be performed when read configuration regis-

ter bit RCR15 is set.

To perform an asynchronous page-mode read, an address is driven onto the address

bus, and CE# and ADV# are asserted. WE# and RST# must already have been de-asser-

ted. WAIT is de-asserted during asynchronous page mode. ADV# can be driven HIGH to

latch the address, or it must be held LOW throughout the READ cycle. CLK is not used

for asynchronous page mode reads, and is ignored. If only asynchronous reads are to be

performed, CLK should be tied to a valid VIH or VSS level, WAIT signal can be floated,

and ADV# must be tied to ground. Array data is driven onto DQ[15:0] after an initial ac-

cess time tAVQV delay.

In asynchronous page mode, 16 data words are “sensed” simultaneously from the array

and loaded into an internal page buffer. The buffer word corresponding to the initial

address on the address bus is driven onto DQ[15:0] after the initial access delay. The

lowest four address bits determine which word of the 16-word page is output from the

data buffer at any given time.

Note: Asynchronous page read mode is only supported in main array.

Asynchronous Single Word Read

To perform an asynchronous single word read, an address is driven onto the address

bus, and CE# is asserted. ADV# can either be driven HIGH to latch the address or be

held LOW throughout the READ cycle. WE# and RST# must already have been de-asser-

ted. WAIT is set to a de-asserted state during single word mode, as determined by bit 10

of the read configuration register. CLK is not used for asynchronous single word reads,

and is ignored. If asynchronous reads are to be performed only, CLK should be tied to a

valid VIH or VSS level, WAIT can be floated, and ADV# must be tied to ground. After OE#

is asserted, the data is driven onto DQ[15:0] after an initial access time tAVQV or tGLQV

delay.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Read Operations

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Synchronous Burst Mode Read

Read configuration register bits RCR[15:0] must be set before synchronous burst opera-

tion can be performed. Synchronous burst mode can be performed for both array and

non-array reads such as read ID, read status, or read query.

To perform a synchronous burst read, an initial address is driven onto the address bus,

and CE# and ADV# are asserted. WE# and RST# must already have been de-asserted.

ADV# is asserted, and then de-asserted to latch the address. Alternately, ADV# can re-

main asserted throughout the burst access, in which case the address is latched on the

next valid CLK edge while ADV# is asserted.

During synchronous array and non-array read modes, the first word is output from the

data buffer on the next valid CLK edge after the initial access latency delay. Subsequent

data is output on valid CLK edges following a minimum delay. However, for a synchro-

nous non-array read, the same word of data will be output on successive clock edges

until the burst length requirements are satisfied. Refer to the timing diagrams for more

detailed information.

Read CFI

The READ CFI command instructs the device to output CFI data when read. See Com-

mon Flash Interface for details on issuing the READ CFI command, and for details on

addresses and offsets within the CFI database.

Read Device ID

The READ DEVICE IDENTIFIER command instructs the device to output manufacturer

code, device identifier code, block lock status, protection register data, or configuration

Table 12: Device ID Information

Item Address Data

Manufacturer code 0x00 0x89

Device ID code 0x01 ID (see the Device ID Codes table )

Block lock configuration

Block is unlocked

Block is locked

Block is not locked down

Block is locked down

Block base address + 0x02 Lock bit

DQ0 = 0b0

DQ0 = 0b1

DQ1 = 0b0

DQ1 = 0b1

Read configuration register 0x05 RCR contents

General purpose register Device base address + 0x07 General purpose register data

Lock register 0 0x80 PR-LK0 data

64-bit factory-programmed OTP register 0x81–0x84 Factory OTP register data

64-bit user-programmable OTP register 0x85–0x88 User OTP register data

Lock register 1 0x89 PR-LK1 OTP register lock data

128-bit user-programmable protection regis-

ters

0x8A–0x109 OTP register data

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Read Operations

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Device ID Codes

Table 13: Device ID codes

ID Code Type

Device

Density

Device Identifier Codes

–T

(Top Parameter)

–B

(Bottom Parameter)

Device Code 256Mb 8919 891C

Note: 1. The 512Mb devices do not have a unique device ID associated with them. Each die with-

in the stack can be identified by device ID codes.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Device ID Codes

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Program Operations

Successful programming requires the addressed block to be unlocked. If the block is

locked down, WP# must be de-asserted and the block must be unlocked before at-

tempting to program the block. Attempting to program a locked block causes a program

error (SR4 and SR1 set) and termination of the operation. See Security Modes for details

on locking and unlocking blocks.

Word Programming (40h)

Word programming operations are initiated by writing the WORD PROGRAM SETUP

command to the device (see the Command Codes and Definitions table). This is fol-

lowed by a second write to the device with the address and data to be programmed. The

device outputs status register data when read (see the Word Program Flowchart). VPP

must be above VPPLK, and within the specified VPPL MIN/MAX values.

During programming, the device executes a sequence of internally-timed events that

program the desired data bits at the addressed location, and verifies that the bits are

sufficiently programmed. Programming the array changes 1s to 0s. Memory array bits

that are 0s can be changed to 1s only by erasing the block (see Erase Operations).

The status register can be examined for programming progress and errors by reading at

any address. The device remains in the read status register state until another com-

mand is written to the device.

SR7 indicates the programming status while the sequence executes. Commands that

can be issued to the device during programming are PROGRAM SUSPEND, READ STA-

TUS REGISTER, READ DEVICE IDENTIFIER, READ CFI, and READ ARRAY (this returns

unknown data).

When programming has finished, SR4 (when set) indicates a programming failure. If

SR3 is set, the device could not perform the WORD PROGRAMMING operation because

VPP was outside of its acceptable limits. If SR1 is set, the WORD PROGRAMMING opera-

tion attempted to program a locked block, causing the operation to abort.

Before issuing a new command, the status register contents should be examined and

then cleared using the CLEAR STATUS REGISTER command. Any valid command can

follow, when word programming has completed.

Buffered Programming (E8h, D0h)

The device features a 512-word buffer to enable optimum programming performance.

For buffered programming, data is first written to an on-chip write buffer. Then the buf-

fer data is programmed into the array in buffer-size increments. This can improve sys-

tem programming performance significantly over non-buffered programming.

When the BUFFERED PROGRAMMING SETUP command is issued, status register in-

formation is updated and reflects the availability of the buffer. SR7 indicates buffer

availability: if set, the buffer is available; if cleared, the buffer is not available.

Note: The device default state is to output SR data after the BUFFERED PROGRAM-

MING SETUP command. CE# and OE# LOW drive device to update status register. It is

not allowed to issue 70h to read SR data after E8h command; otherwise, 70h would be

counted as word count.

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Program Operations

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On the next write, a word count is written to the device at the buffer address. This tells

the device how many data words will be written to the buffer, up to the maximum size

of the buffer.

On the next write, a device start address is given along with the first data to be written to

the flash memory array. Subsequent writes provide additional device addresses and da-

ta. All data addresses must lie within the start address plus the word count. Optimum

programming performance and lower power usage are obtained by aligning the starting

address at the beginning of a 512-word boundary (A[9:1] = 0x00 for Easy BGA and TSOP,

A[8:0] for QUAD+ package; see Part Numbering Information). The maximum buffer size

would be 256-word if the misaligned address range is crossing a 512-word boundary

during programming.

After the last data is written to the buffer, the BUFFERED PROGRAMMING CONFIRM

command must be issued to the original block address. The device begins to program

buffer contents to the array. If a command other than the BUFFERED PROGRAMMING

CONFIRM command is written to the device, a command sequence error occurs and

SR[7,5,4] are set. If an error occurs while writing to the array, the device stops program-

ming, and SR[7,4] are set, indicating a programming failure.

When buffered programming has completed, additional buffer writes can be initiated

by issuing another BUFFERED PROGRAMMING SETUP command and repeating the

buffered program sequence. Buffered programming may be performed with VPP = VPPL

or VPPH (see Operating Conditions for limitations when operating the device with VPP =

VPPH).

If an attempt is made to program past an erase-block boundary using the BUFFERED

PROGRAM command, the device aborts the operation. This generates a command se-

quence error, and SR[5,4] are set.

If buffered programming is attempted while VPP is at or below VPPLK, SR[4,3] are set. If

any errors are detected that have set status register bits, the status register should be

cleared using the CLEAR STATUS REGISTER command.

Buffered Enhanced Factory Programming (80h, D0h)

Buffered enhanced factory programming (BEFP) speeds up multilevel cell (MLC) pro-

gramming. The enhanced programming algorithm used in BEFP eliminates traditional

programming elements that drive up overhead in device programmer systems.

BEFP consists of three phases: setup, program/verify, and exit (see the BEFP Flowchart).

It uses a write buffer to spread MLC program performance across 512 data words. Verifi-

cation occurs in the same phase as programming to accurately program the cell to the

correct bit state.

A single two-cycle command sequence programs the entire block of data. This en-

hancement eliminates three write cycles per buffer: two commands and the word count

for each set of 512 data words. Host programmer bus cycles fill the device write buffer

followed by a status check. SR0 indicates when data from the buffer has been program-

med into sequential array locations.

Following the buffer-to-flash array programming sequence, the device increments in-

ternal addressing to automatically select the next 512-word array boundary. This aspect

of BEFP saves host programming equipment the address bus setup overhead.

256Mb and 512Mb (256Mb/256Mb),

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With adequate continuity testing, programming equipment can rely on the device’s in-

ternal verification to ensure that the device has programmed properly. This eliminates

the external post-program verification and its associated overhead.

Table 14: BEFP Requirements

Parameter/Issue Requirement Notes

Case temperature TC = 30°C ± 10°C

VCC Nominal VCC

VPP Driven to VPPH

Setup and confirm Target block must be unlocked before issuing the BEFP Setup and Confirm commands.

Programming The first-word address (WA0) of the block to be programmed must be held constant

from the setup phase through all data streaming into the target block, until transition

to the exit phase is desired.

Buffer alignment WA0 must align with the start of an array buffer boundary. 1

Note: 1. Word buffer boundaries in the array are determined by the lowest 9 address bits (0x000

through 0x1FF). The alignment start point is 0x000.

Table 15: BEFP Considerations

Parameter/Issue Requirement Notes

Cycling For optimum performance, cycling must be limited below 50 ERASE cycles per block. 1

Programming blocks BEFP programs one block at a time; all buffer data must fall within a single block. 2

Suspend BEFP cannot be suspended.

Programming the ar-

ray

Programming to the array can occur only when the buffer is full. 3

Notes: 1. Some degradation in performance may occur if this limit is exceeded, but the internal

algorithm continues to work properly.

2. If the internal address counter increments beyond the block's maximum address, ad-

dressing wraps around to the beginning of the block.

3. If the number of words is less than 512, remaining locations must be filled with 0xFFFF.

BEFP Setup Phase: After receiving the BEFP SETUP and CONFIRM command se-

quence, SR7 (ready) is cleared, indicating that the device is busy with BEFP algorithm

startup. A delay before checking SR7 is required to allow the device enough time to per-

form all of its setups and checks (block lock status, VPP level, etc.). If an error is detected,

SR4 is set and BEFP operation terminates. If the block was found to be locked, SR1 is

also set. SR3 is set if the error occurred due to an incorrect VPP level.

Note: Reading from the device after the BEFP SETUP and CONFIRM command se-

quence outputs status register data. Do not issue the READ STATUS REGISTER com-

mand; it will be interpreted as data to be loaded into the buffer.

BEFP Program/Verify Phase: After the BEFP setup phase has completed, the host pro-

gramming system must check SR[7,0] to determine the availability of the write buffer

for data streaming. SR7 cleared indicates the device is busy and the BEFP program/veri-

fy phase is activated. SR0 indicates the write buffer is available.

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Two basic sequences repeat in this phase: loading of the write buffer, followed by buffer

data programming to the array. For BEFP, the count value for buffer loading is always

the maximum buffer size of 512 words. During the buffer-loading sequence, data is stor-

ed to sequential buffer locations starting at address 0x00. Programming of the buffer

contents to the array starts as soon as the buffer is full. If the number of words is less

than 512, the remaining buffer locations must be filled with 0xFFFF.

Note: The buffer must be completely filled for programming to occur. Supplying an ad-

dress outside of the current block's range during a buffer-fill sequence causes the algo-

rithm to exit immediately. Any data previously loaded into the buffer during the fill cy-

cle is not programmed into the array.

The starting address for data entry must be buffer size aligned; if not, the BEFP algo-

rithm will be aborted, the program fails, and the (SR4) flag will be set.

Data words from the write buffer are directed to sequential memory locations in the ar-

ray; programming continues from where the previous buffer sequence ended. The host

programming system must poll SR0 to determine when the buffer program sequence

completes. SR0 cleared indicates that all buffer data has been transferred to the array;

SR0 set indicates that the buffer is not available yet for the next fill cycle. The host sys-

tem may check full status for errors at any time, but it is only necessary on a block basis

after BEFP exit. After the buffer fill cycle, no WRITE cycles should be issued to the de-

vice until SR0 = 0 and the device is ready for the next buffer fill.

Note: Any spurious writes are ignored after a BUFFER FILL operation and when internal

program is proceeding.

The host programming system continues the BEFP algorithm by providing the next

group of data words to be written to the buffer. Alternatively, it can terminate this phase

by changing the block address to one outside of the current block’s range.

The program/verify phase concludes when the programmer writes to a different block

address; data supplied must be 0xFFFF. Upon program/verify phase completion, the de-

vice enters the BEFP exit phase.

Program Suspend

Issuing the PROGRAM SUSPEND command while programming suspends the pro-

gramming operation. This allows data to be accessed from the device other than the

one being programmed. The PROGRAM SUSPEND command can be issued to any de-

vice address. A PROGRAM operation can be suspended to perform reads only. Addition-

ally, a PROGRAM operation that is running during an erase suspend can be suspended

to perform a READ operation.

When a programming operation is executing, issuing the PROGRAM SUSPEND com-

mand requests the device to suspend the programming algorithm at predetermined

points. The device continues to output status register data after the PROGRAM SUS-

PEND command is issued. Programming is suspended when SR[7,2] are set.

To read data from the device, the READ ARRAY command must be issued. READ ARRAY,

READ STATUS REGISTER, READ DEVICE IDENTIFIER, READ CFI, and PROGRAM RE-

SUME valid commands during a program suspend.

During a program suspend, de-asserting CE# places the device in standby, reducing ac-

tive current. VPP must remain at its programming level, and WP# must remain un-

changed while in program suspend. If RST# is asserted, the device is reset.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Program Operations

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Program Resume

The RESUME command instructs the device to continue programming, and automati-

cally clears SR[7,2]. This command can be written to any address. If error bits are set,

the status register should be cleared before issuing the next command. RST# must re-

main de-asserted.

Program Protection

When VPP = VIL, absolute hardware write protection is provided for all device blocks. If

VPP is at or below VPPLK, programming operations halt and SR3 is set, indicating a VPP-

level error. Block lock registers are not affected by the voltage level on VPP; they may still

be programmed and read, even if VPP is less than VPPLK.

Figure 11: Example VPP Supply Connections

VCC

VPP

VCC

VPP

10K Ω

-Factory programming with VPP

= VPPH

-Complete with program/erase

protection when V <

PP VPPLK

VCC VCC

VPP

-Low voltage programming only

-Full device protection unavailable

-Low voltage programming only

-Logic control of device protection

VCC

PROT#

VCC

VPP

-Low voltage and factory programming

VCC

VPP

VCC

VPP

VPPH

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Program Operations

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Erase Operations

BLOCK ERASE Command

ERASE operations are performed on a block basis. An entire block is erased each time a

BLOCK ERASE command sequence is issued, and only one block is erased at a time.

When a block is erased, each bit within that block reads as a logical 1.

A BLOCK ERASE operation is initiated by writing the BLOCK ERASE SETUP command

to the address of the block to be erased, followed by the BLOCK ERASE CONFIRM com-

mand. If the device is placed in standby (CE# de-asserted) during a BLOCK ERASE oper-

ation, the device completes the operation before entering standby. The VPP value must

be above VPPLK and the block must be unlocked.

During a BLOCK ERASE operation, the device executes a sequence of internally-timed

events that conditions, erases, and verifies all bits within the block. Erasing the array

changes the value in each cell from a 1 to a 0. Memory block array cells that with a value

of 1 can be changed to 0 only by programming the block.

The status register can be examined for block erase progress and errors by reading any

address. The device remains in the read status register state until another command is

written. SR0 indicates whether the addressed block is erasing. SR7 is set upon erase

completion.

SR7 indicates block erase status while the sequence executes. When the BLOCK ERASE

operation has completed, SR5 = 1 (set) indicates an erase failure. SR3 = 1 indicates that

the device could not perform the BLOCK ERASE operation because VPP was outside of

its acceptable limits. SR1 = 1 indicates that the BLOCK ERASE operation attempted to

erase a locked block, causing the operation to abort.

Before issuing a new command, the status register contents should be examined and

then cleared using the CLEAR STATUS REGISTER command. Any valid command can

follow after the BLOCK ERASE operation has completed.

The BLOCK ERASE operation is aborted by performing a reset or powering down the

device. In either case, data integrity cannot be ensured, and it is recommended to erase

again the blocks aborted.

BLANK CHECK Command

The BLANK CHECK operation determines whether a specified main block is blank; that

is, completely erased. Other than a BLANK CHECK operation, only a BLOCK ERASE op-

eration can ensure a block is completely erased. BLANK CHECK is especially useful

when a BLOCK ERASE operation is interrupted by a power loss event.

A BLANK CHECK operation can apply to only one block at a time. The only operation

allowed simultaneously is a READ STATUS REGISTER operation. SUSPEND and RE-

SUME operations and a BLANK CHECK operation are mutually exclusive.

A BLANK CHECK operation is initiated by writing the BLANK CHECK SETUP command

to the block address, followed by the CHECK CONFIRM command. When a successful

command sequence is entered, the device automatically enters the read status state.

The device then reads the entire specified block and determines whether any bit in the

block is programmed or over-erased.

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Erase Operations

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BLANK CHECK operation progress and errors are determined by reading the status reg-

ister at any address within the block being accessed. SR7 = 0 is a BLANK CHECK busy

status. SR7 = 1 is a BLANK CHECK operation complete status. The status register should

be checked for any errors and then cleared. If the BLANK CHECK operation fails, mean-

ing the block is not completely erased, SR5 = 1. CE# or OE# toggle (during polling) up-

dates the status register.

The READ STATUS REGISTER command must always be followed by a CLEAR STATUS

mand is written to the device. Any command can follow once the BLANK CHECK com-

mand is complete.

ERASE SUSPEND Command

The ERASE SUSPEND command suspends a BLOCK ERASE operation that is in pro-

gress, enabling access to data in memory locations other than the one being erased. The

ERASE SUSPEND command can be issued to any device address. A BLOCK ERASE oper-

ation can be suspended to perform a WORD or BUFFER PROGRAM operation, or a

READ operation within any block except the block that is erase suspended.

When a BLOCK ERASE operation is executing, issuing the ERASE SUSPEND command

requests the device to suspend the erase algorithm at predetermined points. The device

continues to output status register data after the ERASE SUSPEND command is issued.

Block erase is suspended when SR[7,6] are set.

To read data from the device (other than an erase-suspended block), the READ ARRAY

command must be issued. During erase suspend, a PROGRAM command can be issued

to any block other than the erase-suspended block. Block erase cannot resume until

program operations initiated during erase suspend complete. READ ARRAY, READ STA-

TUS REGISTER, READ DEVICE IDENTIFIER, READ CFI, and ERASE RESUME are valid

commands during erase suspend. Additionally, CLEAR STATUS REGISTER, PROGRAM,

PROGRAM SUSPEND, BLOCK LOCK, BLOCK UNLOCK, and BLOCK LOCK DOWN are

valid commands during an ERASE SUSPEND operation.

During an erase suspend, de-asserting CE# places the device in standby, reducing active

current. VPP must remain at a valid level, and WP# must remain unchanged while in

erase suspend. If RST# is asserted, the device is reset.

ERASE RESUME Command

The ERASE RESUME command instructs the device to continue erasing, and automati-

cally clears SR[7,6]. This command can be written to any address. If status register error

bits are set, the status register should be cleared before issuing the next instruction.

RST# must remain de-asserted.

Erase Protection

When VPP = VIL, absolute hardware erase protection is provided for all device blocks. If

VPP is at or below VPPLK, ERASE operations halt and SR3 is set indicating a VPP-level er-

ror.

256Mb and 512Mb (256Mb/256Mb),

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Erase Operations

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Security Operations

Block Locking

Individual instant block locking is used to protect user code and/or data within the

flash memory array. All blocks power-up in a locked state to protect array data from be-

ing altered during power transitions. Any block can be locked or unlocked with no la-

tency. Locked blocks cannot be programmed or erased; they can only be read.

Software-controlled security is implemented using the BLOCK LOCK and BLOCK UN-

LOCK commands. Hardware-controlled security can be implemented using the BLOCK

LOCK DOWN command along with asserting WP#. Also, V PP data security can be used

to inhibit PROGRAM and ERASE operations.

BLOCK LOCK Command

To lock a block, issue the BLOCK LOCK SETUP command, followed by the BLOCK LOCK

command issued to the desired block’s address. If the SET READ CONFIGURATION

configures the RCR instead.

BLOCK LOCK and UNLOCK operations are not affected by the voltage level on VPP. The

block lock bits may be modified and/or read even if VPP is at or below VPPLK.

BLOCK UNLOCK Command

The BLOCK UNLOCK command is used to unlock blocks. Unlocked blocks can be read,

programmed, and erased. Unlocked blocks return to a locked state when the device is

reset or powered down. If a block is in a lock-down state, WP# must be de-asserted be-

fore it can be unlocked.

BLOCK LOCK DOWN Command

A locked or unlocked block can be locked-down by writing the BLOCK LOCK DOWN

command sequence. Blocks in a lock-down state cannot be programmed or erased;

they can only be read. However, unlike locked blocks, their locked state cannot be

changed by software commands alone. A locked-down block can only be unlocked by

issuing the BLOCK UNLOCK command with WP# de-asserted. To return an unlocked

block to locked-down state, a BLOCK LOCK DOWN command must be issued prior to

changing WP# to V IL. Locked-down blocks revert to the locked state upon reset or power

up the device.

Block Lock Status

The READ DEVICE IDENTIFIER command is used to determine a block’s lock status.

DQ[1:0] display the addressed block’s lock status; DQ0 is the addressed block’s lock bit,

while DQ1 is the addressed block’s lock-down bit.

256Mb and 512Mb (256Mb/256Mb),

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Figure 12: Block Locking State Diagram

[000]

Program/Erase Allowed

WP# = VIL = 0 WP# = VIL = 0

Program/Erase Prevented

(Virtual lock-down)

Program/Erase Prevented

WP# = VIH = 1

[110]

[100]

[001]

[011]

[111]

[101]

[010] (Locked down)

2Fh

01hD0h

01h/2Fh

01hD0h

D0h

D0h, 01h, or 2Fh

(Power-up/

Reset default)

(Lock down

disabled,

WP# = VIH)

(Power-up/

Reset default)

WP# toggle

Program/Erase Allowed

WP# = VIH = 1

Note: 1. D0h = UNLOCK command; 01h = LOCK command; 60h (not shown) LOCK SETUP com-

mand; 2Fh = LOCK DOWN command.

Block Locking During Suspend

Block lock and unlock changes can be performed during an erase suspend. To change

block locking during an ERASE operation, first issue the ERASE SUSPEND command.

Monitor the status register until SR7 and SR6 are set, indicating the device is suspended

and ready to accept another command.

Next, write the desired lock command sequence to a block, which changes the lock

state of that block. After completing BLOCK LOCK or BLOCK UNLOCK operations, re-

sume the ERASE operation using the ERASE RESUME command.

Note:

A BLOCK LOCK SETUP command followed by any command other than BLOCK

LOCK, BLOCK UNLOCK, or BLOCK LOCK DOWN produces a command se-

quence error and set SR4 and SR5. If a command sequence error occurs during

an erase suspend, SR4 and SR5 remains set, even after the erase operation is re-

sumed. Unless the Status Register is cleared using the CLEAR STATUS REGISTER

command before resuming the ERASE operation, possible erase errors may be

masked by the command sequence error.

If a block is locked or locked-down during an erase suspend of the same block,

the lock status bits change immediately. However, the ERASE operation com-

pletes when it is resumed. BLOCK LOCK operations cannot occur during a pro-

gram suspend.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Security Operations

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Selectable OTP Blocks

The OTP security feature on the device is backward-compatible to the earlier genera-

tion devices. Contact your local Micron representative for details about its implementa-

tion.

Password Access

The password access is a security enhancement offered on the device. This feature pro-

tects information stored in array blocks by preventing content alteration or reads until a

valid 64-bit password is received. The password access may be combined with nonvola-

tile protection and/or volatile protection to create a multi-tiered solution.

Contact your Micron sales office for further details concerning password access.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Security Operations

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Status Register

Read Status Register

To read the status register, issue the READ STATUS REGISTER command at any address.

Status register information is available at the address that the READ STATUS REGISTER,

WORD PROGRAM, or BLOCK ERASE command is issued to. Status register data is auto-

matically made available following a word program, block erase, or block lock com-

mand sequence. Reads from the device after any of these command sequences will out-

put the devices status until another valid command is written (e.g. READ ARRAY com-

mand).

The status register is read using single asynchronous mode or synchronous burst mode

reads. Status register data is output on DQ[7:0], while 0x00 is output on DQ[15:8]. In

asynchronous mode, the falling edge of OE# or CE# (whichever occurs first) updates

and latches the status register contents. However, when reading the status register in

synchronous burst mode, CE# or ADV# must be toggled to update status data.

The device write status bit (SR7) provides the overall status of the device. SR[6:1]

present status and error information about the PROGRAM, ERASE, SUSPEND, VPP, and

BLOCK LOCK operations.

Note: Reading the status register is a nonarray READ operation. When the operation oc-

curs in asynchronous page mode, only the first data is valid and all subsequent data are

undefined. When the operation occurs in synchronous burst mode, the same data word

requested will be output on successive clock edges until the burst length requirements

are satisfied.

Table 16: Status Register Description

Notes apply to entire table

Bits Name Bit Settings Description

7 Device write status

(DWS)

0 = Busy

1 = Ready

Status bit: Indicates whether a PROGRAM or

ERASE command cycle is in progress.

6 Erase Suspend Status

(ESS)

0 = Not in effect

1 = In effect

Status bit: Indicates whether an ERASE operation

has been or is going to be suspended.

5:4 Erase/Blank check status

(ES)

Program status (PS)

00 = PROGRAM/ERASE successful

01 = PROGRAM error

10 = ERASE/BLANK CHECK error

11 = Command sequence error

Status/Error bit: Indicates whether an ERASE/

BLANK CHECK or PROGRAM operation was success-

ful. When an error is returned, the operation is

aborted.

3 VPP status (VPPS) 0 = Within limits

1 = Exceeded limits (VPP ≤ VPPLK)

Status bit: Indicates whether a PROGRAM/ERASE

operation is within acceptable voltage range limits.

2 Program suspend status

(PSS)

0 = Not in effect

1 = In effect

Status bit: Indicates whether a PROGRAM opera-

tion has been or is going to be suspended.

1 Block lock status (BLS) 0 = Not locked

1 = Locked (operation aborted)

Status bit: Indicates whether a block is locked

when a PROGRAM or ERASE operation is initiated.

0 BEFP status (BWS) 0 = BEFP complete

1 = BEFP in progress

Status bit: Indicates whether BEFP data has com-

pleted loading into the buffer.

Notes: 1. Default value = 0x80.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Status Register

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2. Always clear the status register prior to resuming ERASE operations. This eliminates sta-

tus register ambiguity when issuing commands during ERASE SUSPEND. If a command

sequence error occurs during an ERASE SUSPEND, the status register contains the com-

mand sequence error status (SR[7,5,4] set). When the ERASE operation resumes and fin-

ishes, possible errors during the operation cannot be detected via the status register be-

cause it contains the previous error status.

3. When bits 5:4 indicate a PROGRAM/ERASE operation error, either a CLEAR STATUS REG-

ISTER 50h) or a RESET command must be issued with a 15µs delay.

Clear Status Register

The CLEAR STATUS REGISTER command clears the status register. It functions inde-

pendently of VPP. The device sets and clears SR[7,6,2], but it sets bits SR[5:3,1] without

clearing them. The status register should be cleared before starting a command se-

quence to avoid any ambiguity. A device reset also clears the status register.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Status Register

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Configuration Register

Read Configuration Register

The read configuration register (RCR) is a 16-bit read/write register used to select bus

read mode (synchronous or asynchronous) and to configure device synchronous burst

read characteristics. To modify RCR settings, use the CONFIGURE READ CONFIGURA-

TION REGISTER command. RCR contents can be examined using the READ DEVICE

IDENTIFIER command and then reading from offset 0x05. On power-up or exit from re-

set, the RCR defaults to asynchronous mode. RCR bits are described in more detail be-

low.

Note: Reading the configuration register is a nonarray READ operation. When the oper-

ation occurs in asynchronous page mode, only the first data is valid, and all subsequent

data are undefined. When the operation occurs in synchronous burst mode, the same

word of data requested will be output on successive clock edges until the burst length

requirements are satisfied.

Table 17: Read Configuration Register

Bits Name Settings/Description

15 Read mode (RM) 0 = Synchronous burst mode read

1 = Asynchronous page mode read (default)

14:11 Latency count

(LC[3:0])

0000 = Code 0 (reserved)

0001 = Code 1 (reserved)

0010 = Code 2

0011 = Code 3

0100 = Code 4

0101 = Code 5

0110 = Code 6

0111 = Code 7

1000 = Code 8

1001 = Code 9

1010 = Code 10

1011 = Code11

1100 = Code 12

1101 = Code 13

1110 = Code 14

1111 = Code 15 (default)

10 WAIT polarity (WP) 0 = WAIT signal is active LOW (default)

1 = WAIT signal is active HIGH

9 Reserved (R) Default 0, Nonchangeable

8 WAIT delay (WD) 0 = WAIT de-asserted with valid data

1 = WAIT de-asserted one data cycle before valid data (default)

7 Burst sequence (BS) Default 0, Nonchangeable

6 Clock edge (CE) 0 = Falling edge

1 = Rising edge (default)

5:4 Reserved (R) Default 0, Nonchangeable

3 Burst wrap (BW) 0 = Wrap; Burst accesses wrap within burst length set by BL[2:0]

1 = No Wrap; Burst accesses do not wrap within burst length (default)

2:0 Burst length (BL[2:0]) 001 = 4-word burst

010 = 8-word burst

011 = 16-word burst

111 = Continuous burst (default)

(Other bit settings are reserved)

Read Mode

The read mode (RM) bit selects synchronous burst mode or asynchronous page mode

operation for the device. When the RM bit is set, asynchronous page mode is selected

(default). When RM is cleared, synchronous burst mode is selected.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Configuration Register

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Latency Count

The latency count (LC) bits tell the device how many clock cycles must elapse from the

rising edge of ADV# (or from the first valid clock edge after ADV# is asserted) until the

first valid data word is driven to DQ[15:0]. The input clock frequency is used to deter-

mine this value. The First Access Latency Count figure shows the data output latency for

different LC settings.

Figure 13: First Access Latency Count

Code 1

(Reserved )

Code 6

Code 5

Code 4

Code 3

Code 2

Code 0 (Reserved )

Code 7

Valid

Address

Valid

Output Valid

Output

Valid

Output Valid

Output

Valid

Output Valid

Output

Valid

Output Valid

Output

Valid

Output Valid

Output

Valid

Output Valid

Output

Valid

Output Valid

Output

Valid

Output

Address [A]

ADV# [V]

DQ[15:0] [D/Q]

CLK [C]

Note: 1. First Access Latency Count Calculation:

• 1 / CLK frequency = CLK period (ns)

• n x (CLK period) ≥ tAVQV (ns) – tCHQV (ns)

• Latency Count = n

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Configuration Register

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Figure 14: Example Latency Count Setting Using Code 3

CLK

CE#

ADV#

A[MAX:1]

D[15:0]

tData

01 2 34

High-Z

Code 3

Address

R103

Data

End of Wordline Considerations

End of wordline (EOWL) wait states can result when the starting address of the burst op-

eration is not aligned to a 16-word boundary; that is, A[4:1] of the start address does not

equal 0x0. The figure below illustrates the end of wordline wait state(s) that occur after

the first 16-word boundary is reached. The number of data words and wait states is

summarized in the table below.

Figure 15: End of Wordline Timing Diagram

CLK

ADV#

EOWL

Data

OE#

WAIT#

A[MAX:1]

DQ[15:0]

Latency Count

Data Data

Address

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Configuration Register

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Table 18: End of Wordline Data and WAIT State Comparison

Latency Count

130nm 65nm

Data Words WAIT States Data Words WAIT States

1 Not Supported Not Supported Not Supported Not Supported

2 4 0 to 1 16 0 to 1

3 4 0 to 2 16 0 to 2

4 4 0 to 3 16 0 to 3

5 4 0 to 4 16 0 to 4

6 4 0 to 5 16 0 to 5

7 4 0 to 6 16 0 to 6

8 Not Supported Not Supported 16 0 to 7

9 16 0 to 8

10 16 0 to 9

11 16 0 to 10

12 16 0 to 11

13 16 0 to 12

14 16 0 to 13

15 16 0 to 14

WAIT Signal Polarity and Functionality

The WAIT polarity (WP) bit, RCR10 determines the asserted level (VOH or VOL) of WAIT.

When WP is set, WAIT is asserted HIGH (default). When WP is cleared, WAIT is asserted

LOW. The WAIT signal changes state on valid clock edges during active bus cycles (CE#

asserted, OE# asserted, RST# de-asserted).

The WAIT signal indicates data valid when the device is operating in synchronous mode

(RCR15 = 0). The WAIT signal is only de-asserted when data is valid on the bus. When

the device is operating in synchronous nonarray read mode, such as read status, read

ID, or read CFI, the WAIT signal is also de-asserted when data is valid on the bus. WAIT

behavior during synchronous nonarray reads at the end of wordline works correctly on-

ly on the first data access. When the device is operating in asynchronous page mode,

asynchronous single word read mode, and all write operations, WAIT is set to a de-as-

serted state as determined by RCR10.

Table 19: WAIT Functionality Table

Condition WAIT Notes

CE# = 1, OE# = X or CE# = 0, OE# = 1 High-Z 1

CE# = 0, OE# = 0 Active 1

Synchronous Array Reads Active 1

Synchronous Nonarray Reads Active 1

All Asynchronous Reads De-asserted 1

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Configuration Register

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Table 19: WAIT Functionality Table (Continued)

Condition WAIT Notes

All Writes High-Z 1, 2

Notes: 1. Active means that WAIT is asserted until data becomes valid, then deasserts.

2. When OE# = VIH during writes, WAIT = High-Z.

WAIT Delay

The WAIT delay (WD) bit controls the WAIT assertion delay behavior during synchro-

nous burst reads. WAIT can be asserted either during or one data cycle before valid data

is output on DQ[15:0]. When WD is set, WAIT is de-asserted one data cycle before valid

data (default). When WD is cleared, WAIT is de-asserted during valid data.

Burst Sequence

The burst sequence (BS) bit selects linear burst sequence (default). Only linear burst se-

quence is supported. The synchronous burst sequence for all burst lengths, as well as

the effect of the burst wrap (BW) setting are shown below.

Table 20: Burst Sequence Word Ordering

Start

Address

(DEC)

Burst

Wrap

(RCR3)

Burst Addressing Sequence (DEC)

4-Word Burst

(BL[2:0] =

0b001)

8-Word Burst

(BL[2:0] = 0b010)

16-Word Burst

(BL[2:0] = 0b011)

Continuous Burst

(BL[2:0] = 0b111)

0 0 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4…14-15 0-1-2-3-4-5-6-…

1 0 1-2-3-0 1-2-3-4-5-6-7-0 1-2-3-4-5…15-0 1-2-3-4-5-6-7-…

2 0 2-3-0-1 2-3-4-5-6-7-0-1 2-3-4-5-6…15-0-1 2-3-4-5-6-7-8-…

3 0 3-0-1-2 3-4-5-6-7-0-1-2 3-4-5-6-7…15-0-1-2 3-4-5-6-7-8-9-…

4 0 4-5-6-7-0-1-2-3 4-5-6-7-8…15-0-1-2-3 4-5-6-7-8-9-10…

5 0 5-6-7-0-1-2-3-4 5-6-7-8-9…15-0-1-2-3-4 5-6-7-8-9-10-11…

6 0 6-7-0-1-2-3-4-5 6-7-8-9-10…15-0-1-2-3-4-5 6-7-8-9-10-11-12-…

7 0 7-0-1-2-3-4-5-6 7-8-9-10…15-0-1-2-3-4-5-6 7-8-9-10-11-12-13…

⋮ ⋮ ⋮ ⋮ ⋮ ⋮

14 0 14-15-0-1-2…12-13 14-15-16-17-18-19-20-…

15 0 15-0-1-2-3…13-14 15-16-17-18-19-20-21-…

⋮ ⋮ ⋮ ⋮ ⋮ ⋮

0 1 0-1-2-3 0-1-2-3-4-5-6-7 0-1-2-3-4…14-15 0-1-2-3-4-5-6-…

1 1 1-2-3-4 1-2-3-4-5-6-7-8 1-2-3-4-5…15-16 1-2-3-4-5-6-7-…

2 1 2-3-4-5 2-3-4-5-6-7-8-9 2-3-4-5-6…16-17 2-3-4-5-6-7-8-…

3 1 3-4-5-6 3-4-5-6-7-8-9-10 3-4-5-6-7…17-18 3-4-5-6-7-8-9-…

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Configuration Register

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Table 20: Burst Sequence Word Ordering (Continued)

Start

Address

(DEC)

Burst

Wrap

(RCR3)

Burst Addressing Sequence (DEC)

4-Word Burst

(BL[2:0] =

0b001)

8-Word Burst

(BL[2:0] = 0b010)

16-Word Burst

(BL[2:0] = 0b011)

Continuous Burst

(BL[2:0] = 0b111)

4 1 4-5-6-7-8-9-10-11 4-5-6-7-8…18-19 4-5-6-7-8-9-10…

5 1 5-6-7-8-9-10-11-12 5-6-7-8-9…19-20 5-6-7-8-9-10-11…

6 1 6-7-8-9-10-11-12-13 6-7-8-9-10…20-21 6-7-8-9-10-11-12-…

7 1 7-8-9-10-11-12-13-14 7-8-9-10-11…21-22 7-8-9-10-11-12-13…

⋮ ⋮ ⋮ ⋮ ⋮ ⋮

14 1 14-15-16-17-18…28-29 14-15-16-17-18-19-20-…

15 1 15-16-17-18-19…29-30 15-16-17-18-19-20-21-…

Clock Edge

The clock edge (CE) bit selects either a rising (default) or falling clock edge for CLK. This

clock edge is used at the start of a burst cycle to output synchronous data and to

assert/de-assert WAIT.

Burst Wrap

The burst wrap (BW) bit determines whether 4-word, 8-word, or 16-word burst length

accesses wrap within the selected word length boundaries or cross word length boun-

daries. When BW is set, burst wrapping does not occur (default). When BW is cleared,

burst wrapping occurs.

When performing synchronous burst reads with BW set (no wrap), an output delay may

occur when the burst sequence crosses its first device row (16-word) boundary. If the

burst sequence’s start address is 4-word aligned, then no delay occurs. If the start ad-

dress is at the end of a 4-word boundary, the worst-case output delay is one clock cycle

less than the first access latency count. This delay can take place only once and doesn’t

occur if the burst sequence does not cross a device row boundary. WAIT informs the

system of this delay when it occurs.

Burst Length

The burst length bits (BL[2:0]) select the linear burst length for all synchronous burst

reads of the flash memory array. The burst lengths are 4-word, 8-word, 16-word, or con-

tinuous.

Continuous burst accesses are linear only and do not wrap within any word length

boundaries. When a burst cycle begins, the device outputs synchronous burst data until

it reaches the end of the “burstable” address space.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Configuration Register

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One-Time Programmable Registers

Read OTP Registers

The device contains 17 OTP registers that can be used to implement system security

measures and/or device identification. Each OTP register can be individually locked.

The first 128-bit OTP register is comprised of two 64-bit (8-word) segments. The lower

64-bit segment is preprogrammed at the Micron factory with a unique 64-bit number.

The upper 64-bit segment, as well as the other sixteen 128-bit OTP registers, are blank.

Users can program them as needed. Once programmed, users can also lock the OTP

low).

The OTP registers contain OTP bits; when programmed, PR bits cannot be erased. Each

OTP register can be accessed multiple times to program individual bits, as long as the

Each OTP register has an associated lock register bit. When a lock register bit is pro-

grammed, the associated OTP register can only be read; it can no longer be program-

med. Additionally, because the lock register bits themselves are OTP, when program-

med, they cannot be erased. Therefore, when an OTP register is locked, it cannot be un-

locked.

The OTP registers can be read from an OTP-RA address. To read the OTP register, a

READ DEVICE IDENTIFIER command is issued at an OTP-RA address to place the de-

vice in the read device identifier state. Next, a READ operation is performed using the

address offset corresponding to the register to be read. The Device Identifier Informa-

tion table shows the address offsets of the OTP registers and lock registers. PR data is

read 16 bits at a time.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

One-Time Programmable Registers

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Figure 16: OTP Register Map

0x89

Lock Register 1

15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

0x102

0x109

0x8A

0x91

0x88

0x85

64-bit Segment

Lock Register 0

128-bit OTP

0x84

0x81

0x80 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0

128-bit OTP

Factory Programed

User Programmable

Program OTP Registers

To program an OTP register, a PROGRAM OTP REGISTER command is issued at the pa-

rameter’s base address plus the offset of the desired OTP register location. Next, the de-

sired OTP register data is written to the same OTP register address.

The device programs the 64-bit and 128-bit user-programmable OTP register data 16

bits at a time. Issuing the PROGRAM OTP REGISTER command outside of the OTP reg-

ister’s address space causes a program error (SR4 set). Attempting to program a locked

OTP register causes a program error (SR4 set) and a lock error (SR1 set).

Lock OTP Registers

Each OTP register can be locked by programming its respective lock bit in the lock regis-

ter. The corresponding bit in the lock register is programmed by issuing the PROGRAM

LOCK REGISTER command, followed by the desired lock register data. The physical ad-

dresses of the lock registers are 0x80 for register 0 and 0x89 for register 1; these address-

es are used when programming the lock registers.

Bit 0 of lock register 0 is programmed during the manufacturing process, locking the

lower-half segment of the first 128-bit OTP register. Bit 1 of lock register 0, which corre-

sponds to the upper-half segment of the first 128-bit OTP register, can be programmed

by the user . When programming bit 1 of lock register 0, all other bits need to be left as 1

such that the data programmed is 0xFFFD.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

One-Time Programmable Registers

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Lock register 1 controls the the upper sixteen 128-bit OTP registers. Each bit of lock reg-

ister 1 corresponds to a specific 128-bit OTP register. Programming a bit in lock register

1 locks the corresponding 128-bit OTP register; e.g., programming LR1.0 locks the corre-

sponding OTP register 1.

Note: Once locked, the OTP registers cannot be unlocked.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

One-Time Programmable Registers

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Common Flash Interface

The CFI is part of an overall specification for multiple command-set and control-inter-

face descriptions. System software can parse the CFI database structure to obtain infor-

mation about the device, such as block size, density, bus width, and electrical specifica-

tions. The system software determines which command set to use to properly perform a

WRITE command, a BLOCK ERASE or READ command, and to otherwise control the

device. Information in the CFI database can be viewed by issuing the READ CFI com-

mand.

READ CFI Structure Output

The READ CFI command obtains CFI database structure information and always out-

puts it on the lower byte, DQ[7:0], for a word-wide (x16) device. This CFI-compliant de-

vice always outputs 00h data on the upper byte (DQ[15:8]).

The numerical offset value is the address relative to the maximum bus width the device

supports. For this device family, the starting address is a 10h, which is a word address

for x16 devices. For example, at this starting address of 10h, a READ CFI command out-

puts an ASCII Q in the lower byte and 00h in the higher byte as shown here.

In all the CFI tables shown here, address and data are represented in hexadecimal nota-

tion. In addition, because the upper byte of word-wide devices is always 00h, as shown

in the example here, the leading 00 has been dropped and only the lower byte value is

shown. Following is a table showing the CFI output for a x16 device, beginning at ad-

dress 10h and a table showing an overview of the CFI database sections with their ad-

dresses.

Table 21: Example of CFI Output (x16 device) as a Function of Device and Mode

Device

Hex

Offset

Hex

Code

ASCII Value

(DQ[15:8])

ASCII Value

(DQ[7:0])

Address 00010: 51 00 Q

00011: 52 00 R

00012: 59 00 Y

00013: P_IDLO 00 Primary vendor ID

00014: P_IDHI 00

00015: PLO 00 Primary vendor table address

00016: PHI 00

00017: A_IDLO 00 Alternate vendor ID

00018: A_IDHI 00

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 22: CFI Database: Addresses and Sections

Address Section Name Description

00001:Fh Reserved Reserved for vendor-specific information

00010h CFI ID string Flash device command set ID (identification) and vendor da-

ta offset

0001Bh System interface information Flash device timing and voltage

00027h Device geometry definition Flash device layout

P Primary Micron-specific extended query Vendor-defined informaton specific to the primary vendor

algorithm (offset 15 defines P which points to the primary

Micron-specific extended query table.)

Table 23: CFI ID String

Hex

Offset Length Description Address

Hex

Code

ASCII Value

(DQ[7:0])

10h 3 Query unique ASCII string “QRY” 10: - -51 Q

11: - -52 R

12: - -59 Y

13h 2 Primary vendor command set and control

interface ID code. 16-bit ID code for ven-

dor-specified algorithms.

13: - -01 Primary vendor ID number

14: - -00

15h 2 Extended query table primary algorithm

address.

15: - -0A Primary vendor table ad-

dress, primary algorithm

16: - -01

17h 2 Alternate vendor command set and control

interface ID code. 0000h means no second

vendor-specified algorithm exists.

17: - -00 Alternate vendor ID number

18: - -00

19h 2 Secondary algorithm extended query table

address. 0000h means none exists.

19: - -00 Primary vendor table ad-

dress, secondary algorithm

1A: - -00

Note: 1. The CFI ID string provides verification that the device supports the CFI specification. It

also indicates the specification version and supported vendor-specific command sets.

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 24: System Interface Information

Hex

Offset Length Description Address

Hex

Code

ASCII Value

(DQ[7:0])

1Bh 1 VCC logic supply minimum program/erase voltage.

bits 0 - 3 BCD 100 mV

bits 4 - 7 BCD volts

1Bh - -17 1.7V

1Ch 1 VCC logic supply maximum program/erase volt-

age.

bits 0 - 3 BCD 100 mV

bits 4 - 7 BCD volts

1Ch - -20 2.0V

1Dh 1 VPP [programming] supply minimum program/

erase voltage.

bits 0 - 3 BCD 100 mV

bits 4 - 7 hex volts

1Dh - -85 8.5V

1Eh 1 VPP [programming] supply maximum program/

erase voltage.

bits 0 - 3 BCD 100 mV

bits 4 - 7 hex volts

1Eh - -95 9.5V

1Fh 1 “n” such that typical single word program time-

out = 2n μs.

1Fh - -09 512µs

20h 1 “n” such that typical full buffer write timeout =

2n μs.

20h - -0A 1024µs

21h 1 “n” such that typical block erase timeout = 2n ms. 21h - -0A 1s

22h 1 “n” such that typical full chip erase timeout = 2n

ms.

22h - -00 NA

23h 1 “n” such that maximum word program timeout =

2n times typical.

23h - -01 1024µs

24h 1 “n” such that maximum buffer write timeout =

2n times typical.

24h - -02 4096µs

25h 1 “n” such that maximum block erase timeout = 2n

times typical.

25h - -02 4s

26h 1 “n” such that maximum chip erase timeout = 2n

times typical.

26h - -00 NA

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 25: Device Geometry

Hex

Offset Length Description Address

Hex

Code

ASCII Value

(DQ[7:0])

27h 1 n such that device size in bytes = 2n. 27: See Note 1

28h 2 Flash device interface code assignment: n such that n + 1

specifies the bit field that represents the flash device width

capabilities as described here:

bit 0: x8

bit 1: x16

bit 2: x32

bit 3: x64

bits 4 - 7: –

bits 8 - 15: –

28: - -01 x16

29: - -00

2Ah 2 n such that maximum number of bytes in write buffer = 2n. 2Ah - -0A 1024

2Bh - -00

2Ch 1 Number of erase block regions (x) within the device:

1) x = 0 means no erase blocking; the device erases in bulk.

2) x specifies the number of device regions with one or more

contiguous, same-size erase blocks.

3) Symmetrically blocked partitions have one blocking region.

2Ch See Note 1

2Dh 4 Erase block region 1 information:

bits 0 - 15 = y, y + 1 = number of identical-size erase blocks.

bits 16 - 31 = z, region erase block(s) size are z x 256 bytes.

2D:

2E:

2F:

30:

See Note 1

31h 4 Erase block region 2 information:

bits 0 - 15 = y, y + 1 = number of identical-size erase blocks.

bits 16 - 31 = z, region erase block(s) size are z x 256 bytes.

31:

32:

33:

34:

See Note 1

35h 4 Reserved for future erase block region information. 35:

36:

37:

38:

See Note 1

Note: 1. See Block Region Map Information table.

Table 26: Block Region Map Information

Address

256Mb

Address

256Mb

Bottom Top Bottom Top

27: --19 --19 30: --00 --02

28: --01 --01 31: --FE --03

29: --00 --00 32: --00 --00

2A: --0A --0A 33: --00 --80

2B: --00 --00 34: --02 --00

2C: --02 --02 35: --00 --00

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 26: Block Region Map Information (Continued)

Address

256Mb

Address

256Mb

Bottom Top Bottom Top

2D: --03 --FE 36: --00 --00

2E: --00 --00 37: --00 --00

2F: --80 --00 38: --00 --00

Table 27: Primary Vendor-Specific Extended Query

Hex Offset

P = 10Ah Length Description Address Hex Code

ASCII Value

(DQ[7:0])

(P+0)h

(P+1)h

(P+2)h

3 Primary extended query table, unique ASCII

string: PRI

10A: - -50 P

10B: - -52 R

10C: - -49 I

(P+3)h 1 Major version number, ASCII 10D: - -31 1

(P+4)h 1 Minor version number, ASCII 10E: - -34 4

(P+5)h

(P+6)h

(P+7)h

(P+8)h

4 Optional feature and command support (1 = yes;

0 = no)

Bits 11 - 29 are reserved; undefined bits are 0

If bit 31 = 1, then another 31-bit field of optional

features follows at the end of the bit 30 field.

10F: - -E6 –

110: - -01 –

111: - -00 –

112: See Note 1 –

Bit 0: Chip erase supported. bit 0 = 0 No

Bit 1: Suspend erase supported. bit 1 = 1 Yes

Bit 2: Suspend program supported. bit 2 = 1 Yes

Bit 3: Legacy lock/unlock supported. bit 3 = 0 No

Bit 4: Queued erase supported. bit 4 = 0 No

Bit 5: Instant individual block locking supported. bit 5 = 1 Yes

Bit 6: OTP bits supported. bit 6 = 1 Yes

Bit 7: Page mode read supported. bit 7 = 1 Yes

Bit 8: Synchronous read supported. bit 8 = 1 Yes

Bit 9: Simultaneous operations supported. bit 9 = 0 No

Bit 10: Extended Flash array block supported bit 10 = 0 No

Bit 11: Permanent block locking of up to full

main array supported

bit 11 = 0 No

Bit 12: Permanent block locking of up to partial

main array supported

bit 12 = 0 No

Bit 30: CFI links to follow: bit 30 = 0 See Note 1

Bit 31: Another optional features field to follow. bit 31 = 0

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 27: Primary Vendor-Specific Extended Query (Continued)

Hex Offset

P = 10Ah Length Description Address Hex Code

ASCII Value

(DQ[7:0])

(P+9)h 1 Supported functions after SUSPEND: READ AR-

RAY, STATUS, QUERY. Other supported options in-

clude:

Bits 1 - 7: Reserved; undefined bits are 0.

113: - -01 –

Bit 0: Program supported after ERASE SUSPEND. bit 0 = 1 Yes

(P+A)h

(P+B)h

2 Block Status Register mask:

Bits 2 - 15 are reserved; undefined bits are 0.

114: - -03 –

115: - -00 –

Bit 0: Block lock-bit status register active. bit 0 = 1 Yes

Bit 1: Block lock-down bit status active. bit 1 = 1 Yes

Bit 4: EFA block lock-bit status register active. bit 4 = 0 No

Bit 5: EFA block lock-bit status active. bit 5 = 0 No

(P+C)h 1 VCC logic supply highest performance program/

erase voltage.

bits 0 - 3 BCD 100 mV

bits 4 - 7 hex value in volts

116: - -18 1.8V

(P+D)h 1 VPP optimum program/erase voltage.

bits 0 - 3 BCD 100mV

bits 4 - 7 hex value in volts

117: - -90 9.0V

Note: 1. See Optional Features Fields table.

Table 28: Optional Features Field

Address

Discrete 512Mb

Bottom Top Bottom Top

– – die 1 (B) die 2 (T) die 1 (T) die 2 (B)

112: --00 --00 40: --00 --40 --00

Table 29: One Time Programmable (OTP) Space Information

Hex Offset

P = 10Ah Length Description Address

Hex

Code

ASCII Value

(DQ[7:0])

(P+E)h 1 Number of OTP block fields in JEDEC ID space.

00h indicates that 256 OTP fields are available.

118: - -02 2

256Mb and 512Mb (256Mb/256Mb),

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Common Flash Interface

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Table 29: One Time Programmable (OTP) Space Information (Continued)

Hex Offset

P = 10Ah Length Description Address

Hex

Code

ASCII Value

(DQ[7:0])

(P+F)h

(P+10)h

(P+11)h

(P+12)h

OTP Field 1: OTP Description:

This field describes user-available OTP bytes.

Some are preprogrammed with device-unique se-

rial numbers. Others are user-programmable.

Bits 0-15 point to the OTP Lock byte (the first

byte).

The following bytes are factory preprogrammed

and user-programmable:

Bits 0 - 7 = Lock/bytes JEDEC plane physical low

address.

Bits 8 - 15 = Lock/bytes JEDEC plane physical high

address.

Bits 16 - 23 = n where 2n equals factory preprog-

rammed bytes.

Bits 24 - 31 = n where 2n equals user-programma-

ble bytes.

119: - -80 80h

11A: - -00 00h

1B: - -03 8 byte

11C: - -03 8 byte

(P+13)h

(P+14)h

(P+15)h

(P+16)h

10 Protection field 2: protection description

Bits 0 - 31 point to the protection register physi-

cal lock word address in the JEDEC plane.

The bytes that follow are factory or user-progam-

mable.

11D: - -89 89h

11E: - -00 00h

11F: - -00 00h

120: - -00 00h

(P+17)h

(P+18)h

(P+19)h

Bits 32 - 39 = n where n equals factory program-

med groups (low byte).

Bits 40 - 47 = n where n equals factory program-

med groups (high byte).

Bits 48 - 55 = n where 2n equals factory program-

med bytes/groups.

121: - -00 0

122: - -00 0

123: - -00 0

(P+1A)h

(P+1B)h

(P+1C)h

Bits 56 - 63 = n where n equals user programmed

groups (low byte).

Bits 64 - 71 = n where n equals user programmed

groups (high byte).

Bits 72 - 79 = n where 2n equals user programma-

ble bytes/groups.

124: - -10 16

125: - -00 0

126: - -04 16

Table 30: Burst Read Information

Hex Offset

P = 10Ah Length Description Address

Hex

Code

ASCII Value

(DQ[7:0])

(P+1D)h

1 Page Mode Read capability:

Bits 7 - 0 = n where 2n hex value represents the

number of read-page bytes. See offset 28h for

device word width to determine page-mode data

output width. 00h indicates no read page buffer.

127: - -05 32 byte

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 30: Burst Read Information (Continued)

Hex Offset

P = 10Ah Length Description Address

Hex

Code

ASCII Value

(DQ[7:0])

(P+1E)h

1 Number of synchronous mode read configuration

fields that follow. 00h indicates no burst capabili-

ty.

128: - -04

(P+1F)h

1 Synchronous mode read capability configuration

Bits 3 - 7 = Reserved.

Bits 0 - 2 = n where 2n+1 hex value represents the

maximum number of continuous synchronous

reads when the device is configured for its maxi-

mum word width.

A value of 07h indicates that the device is capa-

ble of continuous linear bursts that will output

data until the internal burst counter reaches the

end of the device’s burstable address space.

This fields’s 3-bit value can be written directly to

the Read Configuration Register bits 0 - 2 if the

device is configured for its maximum word width.

See offset 28h for word width to determine the

burst data output width.

129: - -01

(P+20)h 1 Synchronous mode read capability configuration

12A: - -02 8

(P+21)h 1 Synchronous mode read capability configuration

12B: - -03 16

(P+22) 1 Synchronous mode read capability configuration

12C: - -07 Continued

Table 31: Partition and Block Erase Region Information

Hex Offset

P = 10Ah Description

Optional Flash features and commands Length

Address

Bottom Top Bottom Top

(P+23)h (P+23)h Number of device hardware-partition regions

within the device:

x = 0: a single hardware partition device (no

fields follow).

x specifies the number of device partition regions

containing one or more contiguous erase block

regions

1 12D: 12D:

256Mb and 512Mb (256Mb/256Mb),

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Table 32: Partition Region 1 Information: Top and Bottom Offset/Address

Hex Offset

P = 10Ah Description

Optional Flash features and commands Length

Address

Bottom Top Bottom Top

(P+24)h

(P+25)h

(P+24)h

(P+25)h

Data size of this Partition Region information field

(number of addressable locations, including this

field.

2 12E: 12E:

12F: 12F:

(P+26)h

(P+27)h

(P+26)h

(P+27)h

Number of identical partitions within the partition

region.

2 130: 130:

131: 131:

(P+28)h (P+28)h Number of program or erase operations allowed in a

partition:

Bits 0 - 3 = Number of simultaneous program opera-

tions.

Bits 4 - 7 = Number of simultaneous erase operations.

1 132: 132:

(P+29)h (P+29)h Simultaneous program or erase operations allowed

in other partitions while a partition in this region is

in program mode:

Bits 0 - 3 = Number of simultaneous program opera-

tions.

Bits 4 - 7 = Number of simultaneous erase operations.

1 133: 133:

(P+2A)h (P+2A)h Simultaneous program or erase operations allowed

in other partitions while a partition in this region is

in erase mode:

Bits 0 - 3 = Number of simultaneous program opera-

tions.

Bits 4 - 7 = Number of simultaneous erase operations.

1 134: 134:

(P+2B)h (P+2B)h Types of erase block regions in this partition region:

x=0: No erase blocking; the partition region erases in

bulk.

x = Number of erase block regions with contiguous,

same-size erase blocks.

Symmetrically blocked partitions have one blocking

region.

Partition size = (Type 1 blocks) x (Type 1 block sizes) +

(Type 2 blocks) x (Type 2 block sizes) +...+ (Type n

blocks) x (Type n block sizes).

1 135: 135:

Table 33: Partition Region 1 Information

Hex Offset

P = 10Ah

Bottom/Top

Description

Optional Flash features and commands Length

Address

Bottom/Top

(P+2C)h

(P+2D)h

(P+2E)h

(P+2F)h

Partition region 1 erase block type 1 information:

Bits 0-15 = y, y+1 = Number of identical-sized erase blocks in a

partition.

Bits 16-31 = z, where region erase block(s) size is z x 256 bytes.

4 136:

137:

138:

139:

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 33: Partition Region 1 Information (Continued)

Hex Offset

P = 10Ah

Bottom/Top

Description

Optional Flash features and commands Length

Address

Bottom/Top

(P+30)h

(P+31)h

Partition 1 (erase block type 1):

Minimum block erase cycles x 1000

2 13A:

13B:

(P+32)h Partition 1 (erase block type 1) bits per cell; internal ECC:

Bits 0 - 3 = bits per cell in erase region

Bit 4 = reserved for “internal ECC used” (1=yes, 0=no)

Bit 5 - 7 = reserved for future use

1 13C:

(P+33)h Partition 1 (erase block type 1) page mode and synchronous

mode capabilities:

Bits 0 = page-mode host reads permitted (1=yes, 0=no)

Bit 1 = synchronous host reads permitted (1=yes, 0=no)

Bit 2 = synchronous host writes permitted (1=yes, 0=no)

Bit 3 - 7 = reserved for future use

1 13D:

(P+34)h

(P+35)h

(P+36)h

(P+37)h

(P+38)h

(P+39)h

Partition 1 (erase block type 1) programming region information:

Bits 0 - 7 = x, 2x: programming region aligned size (bytes)

Bit 8-14 = reserved for future use

Bit 15 = legacy flash operation; ignore 0:7

Bit 16 - 23 = y: control mode valid size (bytes)

Bit 24 - 31 = reserved for future use

Bit 32 - 39 = z: control mode invalid size (bytes)

Bit 40 - 46 = reserved for future use

Bit 47 = legacy flash operation (ignore 23:16 and 39:32)

6 13E:

13F:

140:

141:

142:

143:

(P+3A)h

(P+3B)h

(P+3C)h

(P+3D)h

Partition 1 erase block type 2 information:

Bits 0-15 = y, y+1 = Number of identical-size erase blocks in a par-

tition.

Bits 16 - 31 = z, where region erase block(s) size is z x 256 bytes.

(bottom parameter device only)

4 144:

145:

146:

147:

(P+3E)h

(P+3F)h

Partition 1 (erase block type 2)

Minimum block erase cycles x 1000

2 148:

149:

(P+40)h Partition 1 (erase block type 2) bits per cell, internal EDAC:

Bits 0 - 3 = bits per cell in erase region

Bit 4 = reserved for “internal ECC used” (1=yes, 0=no)

Bits 5 - 7 = reserved for future use

1 14A:

(P+41)h Partition 1 (erase block type 2) page mode and synchronous

mode capabilities:

Bit 0 = page-mode host reads permitted (1=yes, 0=no)

Bit 1 = synchronous host reads permitted (1=yes, 0=no)

Bit 2 = synchronous host writes permitted (1=yes, 0=no)

Bits 3-7 = reserved for future use

1 14B:

256Mb and 512Mb (256Mb/256Mb),

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Common Flash Interface

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Table 33: Partition Region 1 Information (Continued)

Hex Offset

P = 10Ah

Bottom/Top

Description

Optional Flash features and commands Length

Address

Bottom/Top

(P+42)h

(P+43)h

(P+44)h

(P+45)h

(P+46)h

(P+47)h

Partition 1 (erase block type 2) programming region information:

Bits 0-7 = x, 2nx = Programming region aligned size (bytes)

Bits 8-14 = reserved for future use

Bit 15 = legacy flash operation (ignore 0:7)

Bits 16 - 23 = y = Control mode valid size in bytes Bits 24 - 31 =

reserved

Bits 32 - 39 = z = Control mode invalid size in bytes

Bits 40 - 46 = reserved

Bit 47 = legacy flash operation (ignore 23:16 and 39:32)

6 14C:

14D:

14E:

14F:

150:

151:

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 34: Partition Region 1: Partition and Erase Block Map Information

Address

256Mb

Bottom Top

12D: - -01 - -01

12E: - -24 - -24

12F: - -00 - -00

130: - -01 - -01

131: - -00 - -00

132: - -11 - -11

133: - -00 - -00

134: - -00 - -00

135: - -02 - -02

136: - -03 - -FE

137: - -00 - -00

138: - -80 - -00

139: - -00 - -02

13A: - -64 - -64

13B: - -00 - -00

13C: - -02 - -02

13D: - -03 - -03

13E: - -00 - -00

13F: - -80 - -80

140: - -00 - -00

141: - -00 - -00

142: - -00 - -00

143: - -80 - -80

144: - -FE - -03

145: - -00 - -00

146: - -00 - -80

147: - -02 - -00

148: - -64 - -64

149: - -00 - -00

14A: - -02 - -02

14B: - -03 - -03

14C: - -00 - -00

14D: - -80 - -80

14E: - -00 - -00

14F: - -00 - -00

150: - -00 - -00

151: - -80 - -80

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Table 35: CFI Link Information

Offset

P = 10Ah Length Description Address

ASCII Value

(DQ[7:0])

CFI Link field bit definitions:

(P+48)h 4 Bits 0 - 9 = Address offset (within 32Mbit segment of refer-

enced CFI table)

152: See Note 1

(P+49)h Bits 10 - 27 = nth 32Mbit segment of referenced CFI table 153:

(P+4A)h Bits 28 - 30 = Memory Type 154:

(P+4B)h Bit 31 = Another CFI link field immediately follows 155:

(P+4C)h 1 CFI Link field quantity subfield definitions:

Bits 0 - 3 = Quantity field (n such that n+1 equals quantity)

Bit 4 = Table and die relative location

Bit 5 = Link field and table relative location

Bits 6 - 7 = Reserved

156:

Note: 1. See Additional CFI Link Field table.

Table 36: Additional CFI Link Field

Address

Discrete 512Mb

Bottom Top Bottom Top

– – die 1 (B) die 2 (T) die 1 (T) die 2 (B)

152: --FF --FF --10 --FF --10 --FF

153: --FF --FF --20 --FF --20 --FF

154: --FF --FF --00 --FF --00 --FF

155: --FF --FF --00 --FF --00 --FF

156: --FF --FF --10 --FF --10 --FF

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Common Flash Interface

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Flowcharts

Figure 17: Word Program Procedure

Progam

complete

D7 = 1?

Command Cycle

- Issue PROGRAM command

- Address = location to program

- Data = 0x40

Start

Program suspend

(See Suspend/Resume

Flowchart

Yes

No No

Suspend?

Data Cycle

- Address = location to program

- Data = data to program

Check Ready Status

- READ STATUS REGISTER command not required

- Perform READ operation

- Read ready status on signal D7

Errors?

Read Status Register

- Toggle CE# or OE# to update status register

- See Status Register Flowchart

Error-handler

user-defined routine

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

Flowcharts

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Figure 18: Buffer Program Procedure

Yes

Device

ready? SR7 = 0/1

Set timeout or

loop counter

Start

Use single word

programming

Get next

target address

Read status register

SR7 = Valid

(at block address )

Timeout

or count expired?

Issue WRITE-to-BUFFER

command E8h

(at block address)

X = 0

Write confirm D0h

(at block address)

Read status register

Device

supports buffer

writes?

Write word count (N-1)

(at block address)

Write buffer data,

start address

Write buffer data,

(at block address)

within buffer range

X = X + 1

0 = No

Yes

1 = Yes

X = N

Abort

bufferred program

Full status

check (if desired)

SR7? Suspend

program

Another

buffered

programming

Program

complete

Write to another

block address

Suspend

program loop

Buffered program

aborted

Yes

1 = Ready

0 = Busy

N = 0 corresponds to

count = 1

CE# and OE# LOW

updates status register

No Yes

Notes: 1. Word count values on DQ0:DQ15 are loaded into the count register. Count ranges for

this device are N = 0000h to 01FFh.

2. Device outputs the status register when read.

3. Write buffer contents will be programmed at the device start or destination address.

4. Align the start address on a write buffer boundary for maximum programming perform-

ance; that is, A[9:1] of the start address = 0).

5. Device aborts the BUFFERED PROGRAM command if the current address is outside the

original block address.

6. Status register indicates an improper command sequence if the BUFFERED PROGRAM

command is aborted. Follow this with a CLEAR STATUS REGISTER command.

7. Device defaults to SR output data after BUFFERED PROGRAMMING SETUP command

(E8h) is issued . CE# or OE# must be toggled to update the status register . Don’t issue

the READ SR command (70h); it is interpreted by the device as buffer word count.

8. Full status check can be done after erase and write sequences complete. Write FFh after

the last operation to reset the device to read array mode.

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Figure 19: Buffered Enhanced Factory Programming (BEFP) Procedure

No (SR7 = 1)

Yes (SR7 = 0)

Yes (SR0 = 0)

BEFP setup

done?

Issue BEFP SETUP

Data = 0x80

Start

Exit

Issue BEFP CONFIRM

Data = 00D0h

BEFP setup

delay

Read status

SR error-handler

user-defined

Yes

Buffer full?

Buffer ready?

Read status

Write data

word to buffer

Read status

Program

done?

Yes Program

more data

Write 0xFFFF

outside block

Setup Phase Program and Verify Phase Exit Phase

Finish

Yes (SR7 = 1)

No (SR7 = 0)

BEFP exited?

Full status

for errors

No (SR0 = 1)

Yes (SR0 = 0)

Read status

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Figure 20: Block Erase Procedure

Start

SR7 = 1?

Erase Suspend

See Suspend/

Resume Flowchart

Error Handler

user-defined

routine

End

Command Cycle

- Issue ERASE command

- Address = block to be erased

- Data = 0x20

Yes

No Suspend?

Confirm Cycle

Check Ready Status

- Issue CONFIRM command

- Address = block to be erased

- Data = erase confirm (0xD0)

- READ STATUS REGISTER

command not required

- Perform READ operation

- Read ready status on SR7

Yes

Errors?

Read Status Register

- Toggle CE# or OE#

to update status register

- See Status Register Flowchart

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Figure 21: Program Suspend/Resume Procedure

Read Status Register

SR2

SR7

Read Array Data

Program

Completed

Done

Reading

Program

Resumed

Read Array

Data

Yes

Start

Write B0h

Any Address

Program Suspend

Read Status

Write 70h

Write FFh

Any Address

Read Array

Write D0h

Any Address

Program Resume

Write FFh

Read Array

Write 70h

Any Address

Read Status

Any Address

1 = Ready

0 = Busy

1 = Suspended

0 = Completed

(Address = Block to suspend)

update the status register

Initiate Read cycle to

from a block other than

programmed

from the one being

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Figure 22: Erase Suspend/Resume Procedure

Read Status Register

SR6

SR7

Read/Program?

Erase

Completed

Done?

Erase

Resumed

Read Array

Data

Yes

Start

Write B0h

Any Address

Erase Suspend

Read Status

Write 70h

Write D0h

Any Address

Erase Resume

Write FFh

Read Array

Write 70h

Any Address

Read Status

Any Address

1 = Suspended

0 = Completed

1 = Ready

0 = Busy

(FFh/40h)

Address = X

Toggle CE#/OE# to

update the

status register

Read Program

Read Array Data from

a block other than the

one being erased

Program Loop: to a

block other than the

one being erased

Note: 1. The tERS/SUSP timing between the initial BLOCK ERASE or ERASE RESUME command and

a subsequent ERASE SUSPEND command should be followed.

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Figure 23: Block Lock Operations Procedure

Write 90h

Read Block

Lock Status

Locking

Change?

Lock Change

Complete

Yes

Start

Write 01h, D0h, 2Fh

Block Address

Lock Confirm

Read ID Plane

Lock Setup

Write 60h

Write FFh

Any Address

Read Array

Block Address

Optional

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Figure 24: OTP Register Programming Procedure

Start

SR7 = 1?

End

OTP Program Setup

- Write 0xC0

- OTP Address

Yes

Confirm Data

- Write OTP Address and Data

Check Ready Status

- READ STATUS REGISTER

command not required

- Perform READ operation

- Read ready status on SR7

Read Status Register

- Toggle CE# or OE#

to update status register

- See Status Register Flowchart

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Figure 25: Status Register Procedure

Erase Suspend

See Suspend/

Resume Flowchart

Set/Reset

by device

- Set by device

- Reset by user

- See Clear Status

Start

End

Command Cycle

- Issue STATUS REGISTER command

- Address = any device address

- Data = 0x70

Data Cycle

- Read Status Register SR[7:0]

Yes

Yes No

SR7 = 1

SR6 = 1

SR2 = 1

SR5 = 1 SR4 = 1

SR4 = 1

SR3 = 1

SR1 = 1

Yes

Program Suspend

See Suspend/

Resume Flowchart

Error

Erase failure

Error

Command

sequence

Error

Program failure

Error

VPEN/VPP <

VPENLK/VPPLK

Error

Block locked

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Power and Reset Specifications

VCC should attain VCCmin from VSS simultaneously with or before applying VCCQ, VPP

during power up. VCC should attain VSS during power down. Device inputs should not

be driven before supply voltage = VCCmin.

Power supply transitions should only occur when RST# is LOW. This protects the device

from accidental programming or erasure during power transitions.

Asserting RST# during a system reset is important with automated program/erase devi-

ces because systems typically expect to read from the device when coming out of reset.

If a CPU reset occurs without a device reset, proper CPU initialization may not occur.

This is because the device may be providing status information, instead of array data as

expected. Connect RST# to the same active LOW reset signal used for CPU initialization.

Because the device is disabled when RST# is asserted, it ignores its control inputs dur-

ing power-up/down. Invalid bus conditions are masked, providing a level of memory

protection.

Table 37: Power and Reset

Parameter Symbol Min Max Unit Notes

RST# pulse width LOW tPLPH 100 – ns 1, 2, 3, 4

RST# LOW to device reset during erase tPLPH – 25 us 1, 3, 4, 7

RST# LOW to device reset during program – 25 1, 3, 4, 7

VCC Power valid to RST# de-assertion (HIGH) tVCCPH 300 – 1, 4, 5, 6

Notes: 1. These specifications are valid for all device versions (packages and speeds).

2. The device may reset if tPLPH is < tPLPH MIN, but this is not guaranteed.

3. Not applicable if RST# is tied to VCC.

4. Sampled, but not 100% tested.

5. When RST# is tied to the VCC supply, device will not be ready until tVCCPH after VCC ≥

VCCMIN.

6. When RST# is tied to the VCCQ supply, device will not be ready until tVCCPH after VCC ≥

VCCMIN.

7. Reset completes within tPLPH if RST# is asserted while no ERASE or PROGRAM operation

is executing.

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Figure 26: Reset Operation Waveforms

(A) Reset during

read mode

VIH

VIL

RST#

(D) VCC power-up to

RST# HIGH

tPLPH tPHQV

tPHQV

VCC

tVCCPH

(B) Reset during

program or block erase

P1 P2

VIH

VIL

RST#

Abort

complete

Abort

complete

tPLRH

program or block erase

P1 P2

VIH

VIL

RST#

tPLRH

≤

≥

Power Supply Decoupling

The device requires careful power supply de-coupling. Three basic power supply cur-

rent considerations are 1) standby current levels, 2) active current levels, and 3) transi-

ent peaks produced when CE# and OE# are asserted and de-asserted.

When the device is accessed, internal conditions change. Circuits within the device ena-

ble charge pumps, and internal logic states change at high speed. These internal activi-

ties produce transient signals. Transient current magnitudes depend on the device out-

puts’ capacitive and inductive loading. Two-line control and correct de-coupling capac-

itor selection suppress transient voltage peaks.

Because the devices draw their power from VCC, VPP, and VCCQ, each power connection

should have a 0.1µF and a 0.01µF ceramic capacitor to ground. High-frequency, inher-

ently low-inductance capacitors should be placed as close as possible to package leads.

Additionally, for every eight devices used in the system, a 4.7µF electrolytic capacitor

should be placed between power and ground close to the devices. The bulk capacitor is

meant to overcome voltage droop caused by PCB trace inductance.

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Power and Reset Specifications

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Maximum Ratings and Operating Conditions

Stresses greater than those listed can cause permanent damage to the device. This is

stress rating only, and functional operation of the device at these or any other condi-

tions above those indicated is not guaranteed.

Table 38: Maximum Ratings

Parameter Maximum Rating Notes

Temperature under bias –40°C to + 85 °C

Storage temperature –65°C to + 125 °C

Voltage on any signal (except VCC, VPP, and VCCQ) –2V to +4V 1

VPP voltage –2V to +11.5V 1, 2

VCC voltage –2V to +4V 1

VCCQ voltage –2V to +5.6V 1

Output short circuit current 100mA 3

Notes: 1. Voltages shown are specified with respect to VSS. During infrequent nonperiodic transi-

tions, the level may undershoot to –2V for periods less than 20ns or overshoot to VCC +

2V or VCCQ + 2V or VPP + 2V for periods less than 20ns.

2. Program/erase voltage is typically 1.7–2V; 9V can be applied for 80 hours maximum to-

tal, however, 9V program/erase voltage may reduce block cycling capability.

3. Output is shorted for no more than one second, and more than one output is not shor-

ted at one time.

Table 39: Operating Conditions

Symbol Parameter Min Max Unit Notes

TAOperating temperature –40 +85 °C 1

VCC VCC supply voltage 1.7 2 V

VCCQ I/O supply voltage CMOS inputs 1.7 3.6

TTL inputs 2.4 3.6

VPPL VPP voltage supply (logic level) 0.9 3.6 2

VPPH Buffered enhanced factory programming VPP 8.5 9.5

tPPH Maximum VPP hours VPP = VPPH – 80 Hours

BLOCK

ERASE cycles

Main and parameter blocks VPP = VPPL 100,000 – Cycles

Main blocks VPP = VPPH – 1000

Parameter blocks VPP = VPPH – 2500

Notes: 1. TA = ambient temperature.

2. In typical operation, VPP program voltage is VPPL.

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DC Electrical Specifications

Table 40: DC Current Characteristics

Parameter Symbol

CMOS Inputs

(VCCQ =

1.7–3.6V)

TTL Inputs

(VCCQ =

2.4–3.6V)

Unit Test Conditions NotesTyp Max Typ Max

Input load current ILI – ±1 – ±2 µA VCC = VCC (MAX)

VCCQ = VCCQ (MAX)

VIN = VCCQ or VSS

1, 6

Output

leakage

current

DQ[15:0], WAIT ILO – ±1 – ±10 µA VCC = VCC (MAX)

VCCQ = VCCQ (MAX)

VIN = VCCQ or VSS

VCC standby,

Power-down

256Mb ICCS,

ICCD

65 210 65 210 µA VCC = VCC (MAX)

VCCQ = VCCQ (MAX)

CE# = VCCQ

RST# = VCCQ (for ICCS)

RST# = VSS (for ICCD)

WP# = VIH

1. 2

512Mb 130 420 130 420

Average

VCC read

current

Asynchronous sin-

gle-word f = 5 MHz

(1 CLK)

ICCR 26 31 26 31 mA 16-word read VCC = VCC (MAX)

CE# = VIL

OE# = VIH

Inputs:

VIL or VIH

Page mode read

f = 13 MHz (17 CLK)

12 16 12 16 mA 16-word read

Synchronous burst

f = 52 MHz, LC = 4

19 22 19 22 mA 8-word read

16 18 16 18 mA 16-word read

21 24 21 24 mA Continuous

read

VCC program current,

VCC erase current

ICCW,

ICCE

35 50 35 50 mA VPP = VPPL,

program/erase in progress

1, 3, 5

35 50 35 50 VPP = VPPH,

program/erase in progress

1, 3, 5

VCC program sus-

pend current,

VCC erase

suspend current

256Mb ICCWS,

ICCES

65 210 65 210 µA CE# = VCCQ, suspend in pro-

gress

1, 3, 4

512Mb 70 225 70 225

VPP standby current,

VPP program suspend current,

VPP erase suspend current

IPPS,

IPPWS,

IPPES

0.2 5 0.2 5 µA VPP = VPPL,

suspend in progress

1, 3, 7

VPP read IPPR 2 15 2 15 µA VPP = VPPL 1, 3

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Table 40: DC Current Characteristics (Continued)

Parameter Symbol

CMOS Inputs

(VCCQ =

1.7–3.6V)

TTL Inputs

(VCCQ =

2.4–3.6V)

Unit Test Conditions NotesTyp Max Typ Max

VPP program current IPPW 0.05 0.1 0.05 0.1 mA VPP = VPPL, program in progress 3

0.05 0.1 0.05 0.1 VPP = VPPH, program in pro-

gress

VPP erase current IPPE 0.05 0.1 0.05 0.1 mA VPP = VPPL, erase in progress 3

0.05 0.1 0.05 0.1 VPP = VPPH, erase in progress

VPP blank check IPPBC 0.05 0.1 0.05 0.1 mA VPP = VPPL 3

0.05 0.1 0.05 0.1 VPP = VPPH

Notes: 1. All currents are RMS unless noted. Typical values at TYP VCC, TC = +25°C.

2. ICCS is the average current measured over any 5ms time interval 5µs after CE# is de-asser-

ted.

3. Sampled, not 100% tested.

4. ICCES is specified with the device deselected. If device is read while in erase suspend, cur-

rent is ICCES plus ICCR.

5. ICCW, ICCE measured over TYP or MAX times specified in Program and Erase Characteris-

tics (page 97).

6. if VIN > VCC, the input load current increases to 10µA MAX.

7. the IPPS,IPPWS,IPPES will increase to 200µA when VPP/WP# is at VPPH.

Table 41: DC Voltage Characteristics

Parameter Symbol

CMOS Inputs

(VCCQ = 1.7–3.6V)

TTL Inputs1

(VCCQ = 2.4–3.6V)

Unit Test Conditions NotesMin Max Min Max

Input low voltage VIL –0.5 0.4 –0.5 0.6 V 2

Input high voltage VIH VCCQ - 0.4 VCCQ + 0.5 2 VCCQ + 0.5 V

Output low voltage VOL – 0.2 – 0.2 V VCC = VCC (MIN)

VCCQ = VCCQ (MIN)

IOL = 100µA

Output high voltage VOH VCCQ - 0.2 – VCCQ – 0.2 – V VCC = VCC (MIN)

VCCQ = VCCQ (MIN)

IOH = –100µA

VPP lock out voltage VPPLK – 0.4 – 0.4 V 3

VCC lock voltage VLKO 1.5 – 1.5 – V

VCCQ lock voltage VLKOQ 0.9 – 0.9 – V

Notes: 1. Synchronous read mode is not supported with TTL inputs.

2. VIL can undershoot to –1.0V for durations of 2ns or less and VIH can overshoot to VCCQ +

1.0V for durations of 2ns or less.

3. VPP ≤ VPPLK inhibits ERASE and PROGRAM operations. Do not use VPPL and VPPH outside

their valid ranges.

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AC Test Conditions and Capacitance

Figure 27: AC Input/Output Reference Timing

Input VCCQ/2 VCCQ/2 output

VCCQ

Test points

Note: 1. AC test inputs are driven at VCCQ for logic 1 and at 0V for logic 0. Input/output timing

begins/ends at VCCQ/2. Input rise and fall times (10% to 90%) <5ns. Worst-case speed oc-

curs at VCC = VCC (MIN).

Figure 28: Transient Equivalent Load Circuit

Device under

test Out

Notes: 1. See the Test Configuration for Worst-Case Speed Conditions table for component values.

2. CL includes jig capacitance.

Table 42: Test Configuration: Worst-Case Speed Condition

Test Configuration CL (pF)

VCCQ(MIN) standard test 30

Figure 29: Clock Input AC Waveform

tFCLK/RCLK

CLK

tCH/CL

VIH

VIL

tCLK

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AC Test Conditions and Capacitance

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Table 43: Capacitance

Parameter Signal Density Min Typ Max Unit Condition Notes

Input

Capacitance

Address, Data,

CE#, WE#, OE#,

RST#, CLK,

ADV#, WP#

256Mb 3 7 8 pF TYP temp = 25°C;

MAX temp = 85°C

VCC = 0–2.0V,

VCCQ = 0– 3.6V

Discrete silicon die

256Mb/

256Mb

6 14 16

Output

Capacitance

Data, WAIT 256Mb 3 5 7

256Mb/

256Mb

6 10 14

Note: 1. Sampled, but not 100% tested.

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AC Test Conditions and Capacitance

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AC Read Specifications

Table 44: AC Read Specifications

Parameter Symbol Min Max Unit Notes

Asynchronous Specifications

READ cycle time tAVAV Easy BGA

QUAD+

100 – ns –

TSOP 110 –

Address to output valid tAVQV Easy BGA

QUAD+

– 100 ns –

TSOP – 110

CE# LOW to output valid tELQV Easy BGA

QUAD+

– 100 ns –

TSOP – 110

OE# LOW to output valid tGLQV – 25 ns 1, 2

RST# HIGH to output valid tPHQV – 150 ns 1

CE# LOW to output in Low-Z tELQX 0 – ns 1, 3

OE# LOW to output in Low-Z tGLQX 0 – ns 1, 2, 3

CE# HIGH to output in High-Z tEHQZ – 20 ns 1, 3

OE# HIGH to output in High-Z tGHQZ – 15

Output hold from first occurring

address, CE#, or OE# change

tOH 0 –

CE# pulse width HIGH tEHEL 17 – ns 1

CE# LOW to WAIT valid tELTV – 17

CE# HIGH to WAIT High-Z tEHTZ – 20 ns 1, 3

OE# LOW to WAIT valid tGLTV – 17 ns 1

OE# LOW to WAIT in Low-Z tGLTX 0 – ns 1, 3

OE# HIGH to WAIT in High-Z tGHTZ – 20

Latching Specifications

Address setup to ADV# HIGH tAVVH 10 – ns 1

CE# LOW to ADV# HIGH tELVH 10 –

ADV# LOW to output valid tVLQV Easy BGA

QUAD+

– 100 ns 1

TSOP 110

ADV# pulse width LOW tVLVH 10 – ns 1

ADV# pulse width HIGH tVHVL 10 –

Address hold from ADV# HIGH tVHAX 9 – ns 1, 4

Page address access tAPA – 25 ns 1

RST# HIGH to ADV# HIGH tPHVH 30 -

Clock Specifications

256Mb and 512Mb (256Mb/256Mb),

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AC Read Specifications

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Table 44: AC Read Specifications (Continued)

Parameter Symbol Min Max Unit Notes

CLK frequency tCLK Easy BGA

QUAD+

– 52 MHz 1, 3, 5, 6

TSOP 40

CLK period tCLK Easy BGA

QUAD+

19.2 – ns 1, 3, 5, 6

TSOP 25

CLK HIGH/LOW time tCH/CL Easy BGA

QUAD+

5 – ns 1, 3, 5, 6

TSOP 9

CLK fall/rise time tFCLK/RCLK 0.3 3 ns 1, 3, 5, 6

Synchronous Specifications5

Address setup to CLK tAVCH/L 9 – ns 1, 6

ADV# LOW setup to CLK tVLCH/L 9 –

CE# LOW setup to CLK tELCH/L 9 –

CLK to output valid tCHQV /

tCLQV

Easy BGA

QUAD+

– 17 ns 1, 6

TSOP 20

Output hold from CLK tCHQX 3 - ns 1, 6

Address hold from CLK tCHAX 10 - ns 1, 4, 6

CLK to WAIT valid tCHTV Easy BGA

QUAD+

– 17 ns 1, 6

TSOP 20

CLK valid to ADV# setup tCHVL 3 – ns 1

WAIT hold from CLK tCHTX 3 – ns 1, 6

Notes: 1. See AC Test Conditions for timing measurements and maximum allowable input slew

rate.

2. OE# may be delayed by up to tELQV – tGLQV after CE#’s falling edge without impact to

tELQV.

3. Sampled, not 100% tested.

4. Address hold in synchronous burst mode is tCHAX or tVHAX, whichever timing specifica-

tion is satisfied first.

5. Synchronous read mode is not supported with TTL level inputs.

6. Applies only to subsequent synchronous reads.

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AC Read Specifications

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Figure 30: Asynchronous Single-Word Read (ADV# LOW)

tAVAV

ADV#

CE#

OE#

WAIT

RST#

tAVQV

tELQV

tGLQV

tGLTV

tGLQX

tELQX

tPHQV

tEHQZ

tGHQZ

tGHTZ

Note: 1. WAIT shown deasserted during asynchronous read mode (RCR10 = 0, WAIT asserted

LOW).

Figure 31: Asynchronous Single-Word Read (ADV# Latch)

A[4:1]

A[MAX:5]

CE#

OE#

WAIT

ADV#

tELQX

tGLQV

tELQV tEHQZ

tGHQZ

tGHTZ

tOH

tAVAV

tAVQV

tVHVL

tAVVH

tGLTV

tGLQX

tVHAX

Note: 1. WAIT shown deasserted during asynchronous read mode (RCR10 = 0, WAIT asserted

LOW).

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

AC Read Specifications

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Figure 32: Asynchronous Page Mode Read

A[MAX:5]

A[4:1]

ADV#

tAVQV

tVHAX

tVHVL

tAVVH

CE#

OE#

WAIT

tEHTZ

tOH tOH tOH

tAPA

tELQX tAPA

tAPA

tELQV

tGLQV

Valid address

10 2 F

Q1 Q2 Q3 Q16

tOH

tEHQZ

tGHQZ

Note: 1. WAIT shown deasserted during asynchronous read mode (RCR10 = 0, WAIT asserted

LOW).

256Mb and 512Mb (256Mb/256Mb),

P30-65nm

AC Read Specifications

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Figure 33: Synchronous Single-Word Array or Nonarray Read

CLK

CE#

OE#

WAIT

ADV#

tAVCH tCHAX

tAVQV

tAVVH

tVLVH

tELCH

tELVH tELQV

tGLQX

tGLTX

tGHQZ

tEHQZ

tCHTX

tGLQV tCHQV tCHQX

tGHTZ

tCHTV

tVHAX

tVHVL

Notes: 1. WAIT is driven per OE# assertion during synchronous array or nonarray read and can be

configured to assert either during or one data cycle before valid data.

2. In this example, an n-word burst is initiated to the flash memory array and is terminated

by CE# deassertion after the first word in the burst.

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Figure 34: Continuous Burst Read with Output Delay

CLK

ADV#

CE#

OE#

WAIT

tVLCH

tAVCH

tAVVH

tAVQV

tCHAX tCHQV

tCHQV

tCHTX

tCHTV

tCHQV

tGLQX

tGLQV

tELCH

tCHQX

tCHQX tCHQX

tCHQX

tELVH

tELQV

tGLTX

tVHVL tVHAX

Notes: 1. WAIT is driven per OE# assertion during synchronous array or nonarray read and can be

configured to assert either during or one data cycle before valid data.

2. At the end of a wordline; the delay incurred when a burst access crosses a 16-word

boundary and the starting address is not 4-word boundary aligned.

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Figure 35: Synchronous Burst Mode 4-Word Read

CLK

ADV#

CE#

OE#

WAIT

tVLCH

tAVCH Latency count

tAVVH

tAVQV

tCHAX

tGHTZ

tCHTV

tGHQZ

tCHQV

tGLQX

tGLQV

tOH

tCHQX

tELVH

tELQV

tGLTV

tVHVL tVHAX

tELCH tEHQZ

Q0 Q1 Q2 Q3

Note: 1. WAIT is driven per OE# assertion during synchronous array or nonarray read. WAIT as-

serted during initial latency and deasserted during valid data (RCR10 = 0, WAIT asserted

LOW).

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AC Write Specifications

Table 45: AC Write Specifications

Parameter Symbol Min Max Unit Notes

RST# HIGH recovery to WE# LOW tPHWL 150 - ns 1, 2, 3

CE# setup to WE# LOW tELWL 0 - ns 1, 2, 3

WE# write pulse width LOW tWLWH 50 - ns 1, 2, 4

Data setup to WE# HIGH tDVWH 50 - ns 1, 2, 12

Address setup to WE# HIGH tAVWH 50 - ns 1, 2

CE# hold from WE# HIGH tWHEH 0 - ns

Data hold from WE# HIGH tWHDX 0 - ns

Address hold from WE# HIGH tWHAX 0 - ns

WE# pulse width HIGH tWHWL 20 - ns 1, 2, 5

VPP setup to WE# HIGH tVPWH 200 - ns 1, 2, 3, 7

VPP hold from status read tQVVL 0 - ns

WP# hold from status read tQVBL 0 - ns 1, 2, 3, 7

WP# setup to WE# HIGH tBHWH 200 - ns

WE# HIGH to OE# LOW tWHGL 0 - ns 1, 2, 9

WE# HIGH to read valid tWHQV tAVQV + 35 - ns 1, 2, 3, 6, 10

Write to Asynchronous Read Specifications

WE# HIGH to address valid tWHAV 0 - ns 1, 2, 3, 6, 8

Write to Synchronous Read Specifications

WE# HIGH to clock valid tWHCH/L 19 - ns 1, 2, 3, 6, 10

WE# HIGH to ADV# HIGH tWHVH 19 - ns

WE# HIGH to ADV# LOW tWHVL 7 - ns

Write Specification with Clock Active

ADV# HIGH to WE# LOW tVHWL - 20 ns 1, 2, 3, 11

Clock HIGH to WE# LOW tCHWL - 20 ns

Notes: 1. Write timing characteristics during erase suspend are the same as WRITE-only opera-

tions.

2. A WRITE operation can be terminated with either CE# or WE#.

3. Sampled, not 100% tested.

4. Write pulse width LOW (tWLWH or tELEH) is defined from CE# or WE# LOW (whichever

occurs last) to CE# or WE# HIGH (whichever occurs first). Thus, tWLWH = tELEH = tWLEH

= tELWH.

5. Write pulse width HIGH tWHWL or tEHEL) is defined from CE# or WE# HIGH whichever

occurs first) to CE# or WE# LOW whichever occurs last). Thus, tWHWL = tEHEL = tWHEL =

tEHWL).

6. tWHVH or tWHCH/L must be met when transitioning from a WRITE cycle to a synchro-

nous BURST read.

7. VPP and WP# should be at a valid level until erase or program success is determined.

8. This specification is only applicable when transitioning from a WRITE cycle to an asyn-

chronous read. See spec tWHCH/L and tWHVH for synchronous read.

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9. When doing a READ STATUS operation following any command that alters the status

10. Add 10ns if the WRITE operation results in an RCR or block lock status change, for the

subsequent READ operation to reflect this change.

11. These specs are required only when the device is in a synchronous mode and the clock is

active during an address setup phase.

12. This specification must be complied with customer’s writing timing. The result would be

unpredictable if there is any violation to this timing specification.

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Figure 36: Write to Write Timing

Figure 37: Asynchronous Read to Write Timing

tAVAV

CE#

OE#

WAIT

WE#

RST#

tAVQV tWHAX

tAVWH

tELQV tEHQZ

tGLQV

tGLQX tWHDX

tELQX tOH

Q D

tDVWH

tPHQV

tGHQZ

tELWL

tGLTV tGHTZ

tWLWH tWHEH

Note: 1. WAIT de-asserted during asynchronous read and during write. WAIT High-Z during write

per OE# deasserted.

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Figure 38: Write to Asynchronous Read Timing

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Figure 39: Synchronous Read to Write Timing

CLK

ADV#

CE#

OE#

WE#

WAIT

tVLCH

tAVCH Latency count

tAVVH

tAVQV

tWHAV

tAVWH

tVLVH

tCHAX

tCHTV

tGLQX

tGLQV

tWHDX

tVLWH

tWLWH

tELWL

tCHWL

tWHWL

tCHWL

tWHAX

tVHWL

tCHQX

tELVH

tELQV

tGLTX

tVHVL tVHAX

tELCH tEHEL

tEHTZ tWHEH

tGHQZ

DDQ

tCHQV

tCHTX

Note: 1. WAIT shown de-asserted and High-Z per OE# de-assertion during WRITE operation

(RCR10 = 0, WAIT asserted LOW). Clock is ignored during WRITE operation.

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Figure 40: Write to Synchronous Read Timing

CLK

ADV#

CE#

WE#

OE#

WAIT

RST#

tAVCH

tVLCH

tCHAX

tWHAX

tAVWH

tAVQV

Latency count

tCHTV

tGLTX

tELCH

tWHEH

tWHVH

tWLWH

tGLQV

tWHCH/L

tWHAV

tCHQV

tELQV

tWHDX

tDVWH

tPHWL

tCHQX

tCHQV

tEHEL

tELWL

tVLVH tVHAX

D Q Q

Note: 1. WAIT shown de-asserted and High-Z per OE# de-assertion during WRITE operation

(RCR10 = 0, WAIT asserted LOW).

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Program and Erase Characteristics

Table 46: Program and Erase Specifications

Parameter Symbol

VPPL VPPH

Unit NotesMin Typ Max Min Typ Max

Conventional Word Programming

Program

time

Single word tPROG/W – 270 456 – 270 456 µs 1

Buffered Programming

Program

time

Aligned, BP time (32

words)

tPROG – 310 716 – 310 716 µs 1

Aligned, BP time (64

words)

– 310 900 – 310 900

Aligned, BP time (128

words)

– 375 1140 – 375 1140

Aligned, BP time (256

words)

– 505 1690 – 505 1690

One full buffer, BP time

(512 words)

– 900 3016 – 900 3016

Buffered Enhanced Factory Programming

Program Single byte tBEFP/B N/A N/A N/A – 0.5 – µs 1, 2

BEFP Setup tBEFP/SETUP N/A N/A N/A 5 – – 1

Erase and Suspend

Erase time 32KB parameter tERS/PB – 0.8 4.0 – 0.8 4.0 s 1

128KB main tERS/MB – 0.8 4.0 – 0.8 4.0

Suspend la-

tency

Program suspend tSUSP/P – 25 30 – 25 30 µs

Erase suspend tSUSP/E – 25 30 – 25 30

Erase-to-suspend tERS/SUSP – 500 – – 500 – 1, 3

Blank Check

Blank check Main array block tBC/MB – 3.2 – – 3.2 – ms

Notes: 1. Typical values measured at TC = +25°C and nominal voltages. Performance numbers are

valid for all speed versions. Excludes system overhead. Sampled, but not 100% tested.

2. Averaged over entire device.

3. tERS/SUSP is the typical time between an initial BLOCK ERASE or ERASE RESUME com-

mand and the a subsequent ERASE SUSPEND command. Violating the specification re-

peatedly during any particular block erase may cause erase failures.

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Revision History

Rev. D – 9/15

• Correct the tCHTX spec.

Rev. C – 12/13

• On cover page, corrected erase suspend (TYP) from 30μs to 25μs.

• Added the following part number disclaimer: "Not all part numbers listed here are

available for ordering."

• Revised timings

Rev. B – 8/13

• Format and organization edits

Rev. A – 10/12

• Initial Micron brand release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

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