TSHG5410
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 1Document Number: 81811
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSHG5410 90 ± 18 850 20
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHG5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm,
soldered on PCB RthJA 230 K/W
TSHG5410
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 2Document Number: 81811
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
IF = 1 A, tp = 100 μs VF2.3 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj125 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie45 90 135 mW/sr
IF = 1 A, tp = 100 μs Ie900 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe55 mW
Temperature coefficient of φeIF = 100 mA TKφe- 0.35 %/K
Angle of half intensity ϕ± 18 deg
Peak wavelength IF = 100 mA λp820 850 880 nm
Spectral bandwidth IF = 100 mA Δλ 40 nm
Temperature coefficient of λpIF = 100 mA TKλp0.25 nm/K
Rise time IF = 100 mA tr20 ns
Fall time IF = 100 mA tf13 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc18 MHz
Virtual source diameter d2.1mm
TSHG5410
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 3Document Number: 81811
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Pulse Forward Current vs. Pulse Duration
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Radiant Power vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
tp - Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
IF - Forward Current (mA)
18873
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
024
t
p
= 100 µs
t
p
/T = 0.001
13
1
10
100
1000
1 10 100 1000
tP = 0.1 ms
21308 IF - Forward Current (mA)
Ie - Radiant Intensity (mW/sr)
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
800 850
λ- Wavelength (nm)
900
16972
0
0.25
0.5
0.75
1.0
1.25
Φe, rel - Relative Radiant Power
21355 0.6
0.9
0.8
0° 30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.2
0.4
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
TSHG5410
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 4Document Number: 81811
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
35.3 ± 0.55
Ø 5 ± 0.15
Area not plane
< 0.7
2.54 nom.
8.7 ± 0.3
AC
1 min.
(4.5)
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
7.7 ± 0.15
1.1 ± 0.25
R2.49 (sphere)
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5258.11-4
Issue: 2; 19.05.09
21797
12.3 ± 0.3
0.5 + 0.15
- 0.05
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
