TBD62004APG(Z,HZ) - TOSHIBA

2SCR573D

NPN 3.0A 50V Middle Power Transistor Datasheet

llOutline

Parameter Value 　 TO-252 　

　 SC-63 　

VCEO 50V 　　

IC3A 　　

CPT 　

llFeatures ll Inner circuit

1) Suitable for Middle Power Driver.

2) Complementary PNP Types : 2SAR573D.

3) Low VCE(sat)

　　VCE(sat)=350mV(Max.).

　　(IC/IB=1A/50mA)

llApplication

LOW FREQUENCY AMPLIFIER

llPackaging specifications

Part No. Package Package

size

Taping

code

Reel size

(mm)

Tape width

(mm)

Basic

ordering

unit.(pcs)

Marking

2SCR573D TO-252

(CPT) 6595 TL 330 16 2500 CR573

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2SCR573D 　　　　　　　　　　　　　　　　　　　 Datasheet

llAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Values Unit

Collector-base voltage VCBO 50 V

Collector-emitter voltage VCEO 50 V

Emitter-base voltage VEBO 6 V

Collector current IC3 A

ICP*1 6 A

Base current IB0.8 A

Power dissipation PD*2 10 W

Junction temperature Tj150 ℃

Range of storage temperature Tstg -55 to +150 ℃

llElectrical characteristics (Ta = 25°C)

Parameter Symbol Conditions Values Unit

Min. Typ. Max.

Collector-base breakdown

voltage BVCBO IC = 100μA 50 - - V

Collector-emitter breakdown

voltage BVCEO IC = 1mA 50 - - V

Emitter-base breakdown voltage BVEBO IE = 100μA 6 - - V

Collector cut-off current ICBO VCB = 50V - - 1 μA

Emitter cut-off current IEBO VEB = 4V - - 1 μA

Collector-emitter saturation voltage VCE(sat) IC = 1A, IB = 50mA - 130 350 mV

DC current gain hFE VCE = 3V, IC = 100mA 180 - 450 -

Transition frequency fT*3 VCE = 10V, IE = -600mA,

f = 100MHz - 320 - MHz

Output capacitance Cob

VCB = 10V, IE = 0A,

f = 1MHz - 20 - pF

Turn-On time ton IC = 1.5A,

IB1 = 150mA,

IB2 = -150mA,

VCC ⋍ 10V,

RL = 6.8Ω

See test circuit

- 70 - ns

Storage time tstg - 400 - ns

Fall time tf- 120 - ns

*1　Pw=10ms Single Pulse

*2　Tc=25℃

*3　PULSED

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2SCR573D 　　　 Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded Emitter Propagation

Characteristics

Fig.2 Typical Output Characteristics

Fig.3 DC Current Gain vs. Collector

Current(I)

Fig.4 DC Current Gain vs. Collector

Current(II)

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2SCR573D 　　　 Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.5 Collector-Emitter Saturation Voltage vs.

Collector Current(I)

Fig.6 Collector-Emitter Saturation Voltage vs.

Collector Current(II)

Fig.7 Base-Emitter Saturation Voltage vs.

Collector Current

Fig.8 Gain Bandwidth Product vs. Emitter

Current

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2SCR573D 　　　 Datasheet

llElectrical characteristic curves(Ta = 25°C)

Fig.9 Emitter input capacitance vs.

Emitter-Base Voltage

Collector output capacitance vs.

Collector-Base Voltage

Fig.10 Safe Operating Area

SWITCHING TIME TEST CIRCUIT

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2SCR573D 　　　 Datasheet

llDimensions

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Notice-PGA-E Rev.003

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