Two-color detectors K3413-05/-08/-09 Sensors with a wide spectral response range from UV to IR The K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 m to nearly 1.7 m. The built-in thermoelectric cooler maintains a constant temperature during operation, allowing precision measurement with an improved S/N ratio. Features Applications Wide spectral response range Spectrophotometers Si photodiode and InGaAs PIN photodiode are arranged along the same optical axis Laser monitors One-stage thermoelectrically cooled type Flame monitors Radiation thermometers General ratings/Absolute maximum ratings Type No. Package Cooling Detector element One-stage TE-cooled Si InGaAs Si InGaAs Si InGaAs K3413-05 K3413-08 TO-8 K3413-09 Active area (mm) 2.4 x 2.4 0.5 2.4 x 2.4 1 2.4 x 2.4 1 Thermistor allowable dissipation (mW) 0.2 Absolute maximum ratings TE-cooler Reverse Operating Storage allowable voltage temperature temperature current VR Topr Tstg (A) (V) (C) (C) 5 20 5 1.5 -40 to +70 -55 to +85 2 5 10 Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Measurement condition Type No. K3413-05 K3413-08 K3413-09 *1: *2: *3: *4: *5: Peak Photo Spectral sensitivity sensitivity Element response S wavelength Detector temperature range p =p element T Si InGaAs Si InGaAs Si InGaAs (C) 25 -10 25 -10 25 -10 (m) 0.32 to 1.67 0.32 to 2.57 0.32 to 1.67 (m) 0.94 1.55 0.94 2.30 0.94 1.55 Dark current ID VR=10 mV Shunt Resistance Rsh D* =p (M) 200 3000 200 0.03 200 1500 (cm * Hz1/2/W) 1.4 x 1013 1.2 x 1013 1.4 x 1013 7.4 x 1010 1.4 x 1013 1.2 x 1013 Typ. Max. (A/W) (pA) (pA) 0.45 50 100 0.55 50 *1 250 *1 0.45 50 100 0.60 1.5 (A) *2 7.5 (A) *2 0.45 50 100 0.55 70 *2 350 *2 Rise time Terminal tr capacitance VR=0 V Ct RL=1 k VR=5 V 10 to 90 % f=1 MHz (ns) 200 *3 1.5 *4 200 *3 23 *4 200 *3 7 *4 (pF) 60 *5 12 60 *5 200 *2 60 *5 90 VR=5 V VR=1 V =655 nm VR=5 V, RL=50 VR=0 V, f=10 kHz www.hamamatsu.com 1 Two-color detectors K3413-05/-08/-09 Spectral response Si photodiode InGaAs PIN photodiode (Typ. Ta=25 C) 0.7 0.6 Photo sensitivity (A/W) Photo sensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 (Typ. T=-10 C) 0.7 0.5 0.4 K3413-08 0.3 K3413-05/-09 0.2 0.1 0.4 0.6 0.8 1.0 0 0.8 1.0 1.2 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Wavelength (m) Wavelength (m) KIRDB0199EA KIRDB0212EA Dark current vs. reverse voltage Si photodiode InGaAs PIN photodiode (Typ. Ta=25 C) 1 nA (Typ. Ta=25 C) 100 A 10 A K3413-08 Dark current Dark current 1 A 100 pA 100 nA 10 nA K3413-09 1 nA K3413-05 10 pA 0.01 0.1 1 10 Reverse voltage (V) 100 pA 0.01 0.1 1 10 100 Reverse voltage (V) KIRDB0200EA KIRDB0213EA 2 Two-color detectors K3413-05/-08/-09 Terminal capacitance vs. reverse voltage Si photodiode InGaAs PIN photodiode (Typ. Ta=25 C, f=10 kHz) 100 pF (Typ. Ta=25 C, f=1 MHz) 10 nF K3413-08 Terminal capacitance Terminal capacitance 1 nF 10 pF 100 pF 10 pF K3413-09 K3413-05 1 pF 1 pF 0.01 0.1 1 100 fF 0.01 10 0.1 Reverse voltage (V) 1 10 100 Reverse voltage (V) KIRDB0202EA KIRDB0214EA Shunt resistance vs. element temperature Si photodiode InGaAs PIN photodiode (Typ. VR=10 mV) 10 T 10 G 1 T 100 M Shunt resistance Shunt resistance K3413-05 1 G 100 G 10 G 1 G 100 M 10 M K3413-09 10 M 1 M K3413-08 100 k 10 k 1 M 100 k -40 (Typ. VR=10 mV) 100 G 1 k -20 0 20 40 60 80 100 100 -40 -20 0 20 40 60 80 100 Element temperature (C) Element temperature (C) KIRDB0204EA KIRDB0215EA 3 Two-color detectors K3413-05/-08/-09 Dimensional outline (unit: mm) 15.3 0.2 14 0.2 10.0 0.2 0.45 Lead 6.0 0.2 4.4 0.2 InGaAs 12 Min. Si Window 10 0.2 10.2 0.2 5.1 0.2 10.2 0.2 InGaAs (Anode) InGaAs (Cathode) TE-Cooler (-) TE-Cooler (+) Thermistor Si (Cathode) Si (Anode) 5.1 0.2 KIRDA0156EE Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2008 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KIRD1041E04 Sep. 2008 DN