01/99 B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: 2N3821 2N3822 Process NJ32
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 – 0.1 nA VGS = – 30V, VDS = ØV
– 0.1 – 0.1 µA VGS = – 30V, VDS = ØV TA= 150°C
– 0.5 – 2 V VDS = 15V, ID= 50 µA
Gate Source Voltage VGS – 1 – 4 V VDS = 15V, ID= 200 µA
VV
DS = 15V, ID= 400 µA
Gate Source Cutoff Voltage VGS(OFF) – 4 – 6 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 0.5 2.5 2 10 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) nA VDS = 15V, VGS = – 8V
µA VDS = 15V, VGS = – 8V TA= 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) ΩVGS = ØV, ID= ØV f = 1 kHz
Common Source gfs 1500 4500 3000 6500 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source | Yfs | 1500 3000 µS VDS = 15V, VGS = ØV f = 100 MHz
Forward Transmittance
Common Source Output Conductance gos 10 20 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 66pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 22pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit ¯eN200 200 nV/√Hz VDS = 15V, VGS = ØV f = 10 Hz
Input Noise Voltage
Noise Figure NF 5 5 dB VDS = 15V, VGS = ØV f = 10 Hz
RG= 1MΩ
¥ VHF Amplifiers
¥ Small Signal Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-3
B-4 01/99
2N3823, 2N3824
N-Channel Silicon Junction Field-Effect Transistor
¥ VHF Amplifiers
¥ Small Signal Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: 2N3823 2N3824 Process NJ32
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 30 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.5 – 0.1 nA VGS = – 30V, VDS = ØV
– 0.5 – 0.1 µA VGS = – 30V, VDS = ØV TA= 150°C
Gate Source Voltage VGS – 1 – 7.5 V VDS = 15V, ID= 400 µA
Gate Source Cutoff Voltage VGS(OFF) – 8 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 420 mAV
DS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 0.1 nA VDS = 15V, VGS = – 8V
0.1 µA VDS = 15V, VGS = – 8V TA= 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 250 ΩVGS = ØV, ID= ØV f = 1 kHz
Common Source gfs 3500 6500 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source | Yfs | 3200 µS VDS = 15V, VGS = ØV f = 100 MHz
Forward Transmittance
Common Source Output Conductance gos 35 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 66pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 23pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit ¯eN200 nV/√Hz VDS = 15V, VGS = ØV f = 10 Hz
Input Noise Voltage
Noise Figure NF 6 dB VDS = 15V, VGS = ØV f = 10 Hz
RG= 1MΩ
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-4
01/99 B-5
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Gate Current 50 mA
Total Device Power Dissipation (each side) 250 mW
@ 85°C Case Temperature (both sides) 500 mW
Power Derating (both sides) 4.3 mW/°C
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
At 25°C free air temperature: 2N3954 2N3955 2N3956 Process NJ16
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 – 50 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 – 100 pA VGS = – 30V, VDS = ØV
– 500 – 500 – 500 nA VGS = – 30V, VDS = ØV TA= 125°C
Gate Operating Current IG– 50 – 50 – 50 pA VDS = 20V, ID= 200 µA
– 250 – 250 – 250 nA VDS = 20V, ID= 200 µA TA= 125°C
Gate Source Voltage VGS – 4.2 – 4.2 – 4.2 V VDS = 20V, ID= 50 µA
– 0.5 – 4 – 0.5 – 4 – 0.5 – 4 V VDS = 20V, ID= 200 µA
Gate Source Cutoff Voltage VGS(OFF) – 1 – 4.5 – 1 – 4.5 – 1 – 4.5 V VDS = – 20V, IG= 1 nA
Gate Source Forward Voltage VGS(F) 222VV
DS = ØV, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 0.5 5 0.5 5 0.5 5 mA VDS = 20V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 1000 3000 1000 3000 1000 3000 µS VDS = 20V, VGS = ØV f = 1 kHz
Transconductance 1000 1000 1000 µS VDS = 20V, VGS = ØV f = 200 MHz
Common Source Output Capacitance gos 35 35 35 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 444pFV
DS = 20V, VGS = ØV f = 1 MHz
Drain Gate Capacitance Cdgo 1.5 1.5 1.5 pF Vdg = 10V, IS= ØA f = 1 MHz
Common Source Reverse Crss 1.2 1.2 1.2 pF VDS = 20V, VGS = ØV f = 1 MHz
Transfer Capacitance
Noise Figure NF 0.5 0.5 0.5 dB VDS = 20V, VGS = ØV, f = 100 Hz
Rg= 10MΩ
Differential Gate Current | IG1 – IG2 |101010nAV
DS = 20V, ID= 200µA TA= 125°C
Saturation Drain Current Ratio IDSS1/IDSS2 0.95 1 0.95 1 0.95 1 VDS = 20V, VGS = ØV
Differential Gate Source Voltage |VGS1–V
GS2|51015mVV
DS = 20V, ID= 200µA TA= 25°C
Differential Gate Source Voltage ∆VGS1–V
GS2 0.8 2 4 mV/°C VDS = 20V, ID= 200µA to = – 55°C
with Temperature ∆TTA= 25°C
1 2.5 5 mV/°C VDS = 20V, ID= 200µA to = +125°C
Transconductance Ratio gfs1/gfs2 0.97 1 0.97 1 0.97 1 VDS = 20V, ID= 200µA f = 1 kHz
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/14/99 11:29 AM Page B-5
B-6 01/99
2N3957, 2N3958
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Gate Current 50 mA
Total Device Power Dissipation (each side) 250 mW
@ 85°C Case Temperature (both sides) 500 mW
Power Derating (both sides) 4.3 mW/°C
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
At 25°C free air temperature: 2N3957 2N3958 Process NJ16
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 30V, VDS = ØV
– 500 – 500 nA VGS = – 30V, VDS = ØV TA= 125°C
Gate Operating Current IG– 50 – 50 pA VDS = 20V, ID= 200 µA
– 250 – 250 nA VDS = 20V, ID= 200 µA TA= 125°C
Gate Source Voltage VGS – 4.2 – 4.2 V VDS = 20V, ID= 50 µA
– 0.5 – 4 – 0.5 – 4 V VDS = 20V, ID= 200 µA
Gate Source Cutoff Voltage VGS(OFF) – 1 – 4.5 – 1 – 4.5 V VDS = 20V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 22VV
DS = Ø, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 0.5 5 0.5 5 mA VDS = 20V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 1000 3000 1000 3000 µS VDS = 20V, VGS = ØV f = 1 kHz
Forward Transconductance 1000 1000 µS VDS = 20V, VGS = ØV f = 200 MHz
Common Source Output Conductance gos 35 35 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 44pFV
DS = 20V, VGS = ØV f = 1 MHz
Drain Gate Capacitance Cdgo 1.5 1.5 pF VDS = 10V, IS= ØA f = 1 MHz
Common Source Crss 1.2 1.2 pF VDS = 20V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Noise Figure NF 0.5 0.5 dB VDS = 20V, VGS = ØV f = 100 Hz
RG= 1 0MΩ
Differential Gate Current | IG1 – IG2 |10 10nAV
DS = 20V, ID= 200 µA TA= 125°C
Saturation Drain Current Ratio IDSS1 / IDSS2 0.9 1 0.85 1 VDS = 20V, VGS = ØV
Differential Gate Source Voltage | VGS1 – VGS2 |20 25 mV VDS = 20V, ID= 200 µA
TA= 25°C
Differential Gate Source ∆VGS1– VGS2 68mVV
DS = 20V, ID= 200 µA to – 55°C
Voltage with Temperature ∆TTA= 25°C
7.5 10 mV VDS = 20V, ID= 200 µA to 125°C
Transconductance Ratio gfs1 / gfs2 0.9 1 0.85 1 VDS = 20V, ID= 200 µA f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/14/99 11:30 AM Page B-6
01/99 B-7
2N3993, 2N3993A
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage 25 V
Continuous Forward Gate Current – 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
At 25°C free air temperature: 2N3993 2N3993A Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 25 25 V IG= 1 µA, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) 4 9.5 4 9.5 V VDS = – 10V, ID= – 1 µA
Drain Saturation Current (Pulsed) IDSS – 10 – 10 mA VDS = – 10V, VGS = ØV
Drain Reverse Current IDGO – 1.2 – 1.2 nA VDG = – 15V, IS= ØA
– 1.2 – 1.2 µA VDG = – 15V, IS= ØA TA= 15 0°C
Drain Cutoff Current ID(OFF) – 1.2 – 1.2 nA VDS = – 10V, VGS = 10 V
– 1 – 1 µA VDS = – 10V, VGS = 10V TA= 150°C
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 150 150 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source | Yfs | 612712mSV
DS = – 10V, VGS = ØV f = 1 kHz
Forward Transmittance
Common Source Input Capacitance Ciss 16 12 pF VDS = – 10V, VGS = ØV f = 1 MHz
Common Source Crss 4.5 3 pF VDS = Ø, VGS = 10V f = 1 MHz
Reverse Transfer Capacitance
¥ Choppers
¥ High Speed Commutators
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-7
B-8 01/99
2N3994, 2N3994A
P-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ High Speed Commutators
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source Voltage 25 V
Reverse Gate Drain Voltage 25 V
Continuous Forward Gate Current – 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Gate, 3 Drain, 4 Case
At 25°C free air temperature: 2N3994 2N3994A Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 25 25 V IG= 1 µA, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) 1 5.5 1 5.5 V VDS = – 10V, ID= – 1 µA
Drain Saturation Current (Pulsed) IDSS – 2 – 2 mA VDS = – 10V, VGS = ØV
Drain Reverse Current IDGO – 1.2 – 1.2 nA VDG = – 15V, IS= ØA
– 1.2 – 1.2 µA VDG = – 15V, IS= ØA TA= 15 0°C
Drain Cutoff Current ID(OFF) – 1.2 – 1.2 nA VDS = – 10V, VGS = 10V
– 1 – 1 µA VDS = – 10V, VGS = 10V TA= 15 0°C
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 300 300 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source | Yfs | 410510mSV
DS = – 10V, VGS = ØV f = 1 kHz
Forward Transmittance
Common Source Input Capacitance Ciss 16 12 pF VDS = – 10V, VGS = ØV f = 1 MHz
Common Source Crss 5 3.5 pF VDS = Ø, VGS = 10V f = 1 MHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-8
01/99 B-9
2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
2N4117 2N4118 2N4119
At 25°C free air temperature: 2N4117A 2N4118A 2N4119A Process NJ01
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 – 40 V IG= – 1µA, VDS = ØV
Gate Reverse Current
2N4117, 2N4118, 2N4119 IGSS – 10 – 10 – 10 pA VGS = – 20V, VDS = ØV
2N4117A, 2N4118A, 2N4119A – 1– 1– 1pAV
GS = – 20V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.6 – 1.8 – 1 – 3 – 2 – 6 V VDS = 10V, ID= 1 nA
Drain Saturation Current (Pulsed)
2N4117, 2N4118, 2N4119 IGSS 0.03 0.09 0.08 0.24 0.2 0.6 mA VDS = 10V, VGS = ØV
2N4117A, 2N4118A, 2N4119A 0.015 0.09 0.08 0.24 0.2 0.6 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 70 210 80 250 100 330 µS VDS = 10V, VGS = ØV f = 1 kHz
Transconductance
Common Source Output Conductance gos 3 5 10 µS VDS = 10V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 333pFV
DS = 10V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 1.5 1.5 1.5 pF VDS = 10V, VGS = ØV f = 1 MHz
Transfer Capacitance
¥ Audio Amplifiers
¥ Ultra-High Input Impedance
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-9
B-10 01/99
2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixers
¥ Oscillators
¥ VHF Amplifiers
¥ Small Signal Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 150 °C) 2 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
2N4220 2N4221 2N4222
2N4220A 2N4221A 2N4222A
At 25°C free air temperature: NJ16 NJ16 NJ32 Process
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 30 – 30 – 30 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 – 0.1 – 0.1 nA VGS = – 15V, VDS = ØV
– 0.1 – 0.1 – 0.1 µA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Voltage VGS – 0.5 – 2.5 – 1 – 5 – 2 – 6 V VDS = 15V, ID= ( )
(50) (50) (200) (200) (500) (500) µA
Gate Source Cutoff Voltage VGS(OFF) – 4– 6– 8VV
DS = 15V, ID= 0.1 nA
Drain Saturation Current (Pulsed) IDSS 0.5326515mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 1000 4000 2000 5000 2500 6000 µS VDS = 15V, VGS = ØV f = 1 kHz
Transconductance
Common Source Forward Transmittance |Yfs | 750 750 750 µS VDS = 15V, VGS = ØV f = 100 MHz
Common Source Output Conductance gos 10 20 40 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 666pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 222pFV
DS = 15V, VGS = ØV f = 1 MHz
Transfer Capacitance
Noise Figure NF 2.5 2.5 2.5 dB VDS = 15V, VGS = ØV f = 100 MHz
2N4220A, 2N4221A, 2N4222A RG= 1 MΩ
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-10
01/99 B-11
2N4338, 2N4339
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2mW/°C
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: 2N4339 2N4339 Process NJ16
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 30V, VDS = ØV
– 100 – 100 nA VGS = – 30V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 1 – 0.6 – 1.8 V VDS = 15V, ID= 0.1 µA
Drain Saturation Current (Pulsed) IDSS 0.2 0.6 0.5 1.5 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 0.05 0.05 nA VDS = 15V, VGS = ( )
(– 5) (– 5) V
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 2500 1700 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source gfs 600 1800 800 2400 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source Output Conductance gos 515µSV
DS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 77pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 33pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Noise Figure NF 1 1 dB VDS = 15V, VGS = ØV f = 1 kHz
RG= 1MΩ, BW = 200 Hz
¥ Audio Amplifiers
¥ Small Signal Amplifiers
¥ Voltage-Controlled Resistors
¥ Current Limiters & Regulators
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-11
B-12 01/99
2N4340, 2N4341
N-Channel Silicon Junction Field-Effect Transistor
¥ Small Signal Amplifiers
¥ Current Regulators
¥ Voltage-Controlled Resistors
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2mW/°C
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMP4340, SMP4341
At 25°C free air temperature: 2N4340 2N4341 Process NJ16
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 30V, VDS = ØV
– 100 – 100 nA VGS = – 30V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 3– 2– 6 V V
DS = 15V, ID= 0.1 µA
Drain Saturation Current (Pulsed) IDSS 1.2 3.6 3 9 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 0.05 0.07 nA VDS = 15V, VGS = ( )
(– 5) (– 10) V
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 1500 800 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source gfs 1300 3000 2000 4000 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source Output Conductance gos 30 60 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 77pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 33pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Noise Figure NF 1 1 dB VDS = 15V, VGS = ØV f = 1 kHz
RG= 1MΩ, BW = 200 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-12
01/99 B-13
2N4391, 2N4392, 2N4393
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 1.8 W
Power Derating 12 mW/°C
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMP4391, SMP4392, SMP4393
At 25°C free air temperature 2N4391 2N4392 2N4393 Process NJ132
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 – 40 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 – 100 pA VGS = – 20V, VDS = ØV
– 200 – 200 – 200 nA VGS = – 20V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 4 – 10 – 2 – 5 – 0.5 – 3 V VDS = – 20V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 111VI
G= 1 mA, VDS = ØV
Drain Saturation Current (Pulsed) IDSS 50 150 25 75 5 30 mA VDS = 20V, VGS = ØV
100 pA VDS = 20V, VGS = – 5V
200 nA VDS = 20V, VGS = – 5V TA= 150°C
Drain Cutoff Current ID(OFF) 100 pA VDS = 20V, VGS = – 7V
200 nA VDS = 20V, VGS = – 7V TA= 150°C
100 pA VDS = 20V, VGS = – 12V
200 nA VDS = 20V, VGS = – 12V TA= 150°C
0.4 V VGS = ØV, ID= 3 mA
Drain Source ON Voltage VDS(ON) 0.4 V VGS = ØV, ID= 6 mA
0.4 V VGS = ØV, ID= 12 mA
Static Drain Source ON Resistance rDS(ON) 30 60 100 ΩVGS = ØV, ID= 1 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 30 60 100 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source Input Capacitance Ciss 14 14 14 pF VDS = 20V, VGS = ØV f = 1 kHz
Common Source Reverse 3.5 pF VDS = ØV, VGS = – 5V f = 1 kHz
Transfer Capacitance Crss 3.5 pF VDS = ØV, VGS = – 7V f = 1 kHz
3.5 pF VDS = ØV, VGS = – 12V f = 1 kHz
Switching Characteristics
Turn ON Delay Time td(on) 15 15 15 ns VDD = 10V, VGS(ON) = ØV
Rise Time tr555ns 2N4391 2N4392 2N4393
Turn OFF Delay Time td(off) 20 35 50 ns ID(ON) 12 6 3 mA
Fall Time tf15 20 30 ns VGS(OFF) – 12 – 7 – 5 V
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Switches
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Databook.fxp 1/14/99 11:30 AM Page B-13
B-14 01/99
2N4416, 2N4416A
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixers
¥ VHF Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage 2N4416 – 30 V 2N4416A – 35 V
Gate Current 10 mA 10 mA
Continuous Device Dissipation 300 mW 300 mW
Power Derating 2 mW°C 2 mW/°C
TOÐ72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP4416, SMP4416A
Note: rf parameters guaranteed, but not 100% tested.
At 25°C free air temperature: 2N4416 2N4416A Process NJ26
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 30 – 35 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 – 0.1 nA VGS = – 20V, VDS = ØV
– 0.1 – 0.1 µA VGS = – 20V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 6 – 2.5 – 6 V VDS = 15V, ID= 1 nA
Drain Saturation Current (Pulsed) IDSS 515515mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 4500 7500 4500 7500 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance 4000 4000 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source 50 50 µS VDS = 15V, VGS = ØV f = 1 kHz
Output Conductance gos 75 75 µS VDS = 15V, VGS = ØV f = 100 MHz
100 100 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Input Capacitance Ciss 44pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Output Capacitance Coss 22pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 0.8 0.8 pF VDS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Common Source gis 100 100 µS VDS = 15V, VGS = ØV f = 100 MHz
Input Conductance 1000 1000 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source bis 2500 2500 µS VDS = 15V, VGS = ØV f = 100 MHz
Input Susceptance 10000 10000 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source bos 1000 1000 µS VDS = 15V, VGS = ØV f = 100 MHz
Output Susceptance 4000 4000 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Gps 18 18 dB VDS = 15V, ID= 5mA f = 100 MHz
Power Gain 10 10 dB VDS = 15V, ID= 5mA f = 400 MHz
Noise Figure NF 22dB
VDS = 15V, ID= 5mA f = 100 MHz
44dB
RG= 1kΩf = 400 MHz
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Databook.fxp 1/14/99 11:30 AM Page B-14
01/99 B-15
2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861
Reverse Gate Source Voltage – 40 V – 30 V
Reverse Gate Drain Voltage – 40 V – 30 V
Continuous Device Dissipation 1.8 W 1.8 W
Power Derating 10 mW/°C 10 mW/°C
Continuous Forward Gate Current 50 mA 50 mA
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate &Case
Surface Mount
SMP4856, SMP4857, SMP4858,
SMP4859, SMP4860, SMP4861
2N4856 2N4857 2N4858
At 25°C free air temperature: 2N4859 2N4860 2N4861 Process NJ132
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage
2N4856, 2N4857, 2N4858 V(BR)GSS – 40 – 40 – 40 V IG= – 1µA, VDS = ØV
2N4859, 2N4860, 2N4861 – 30 – 30 – 30 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 250 – 250 – 250 pA VGS = – 20V, VDS = ØV
2N4856, 2N4857, 2N4858 – 500 – 500 – 500 nA VGS = – 20V, VDS = ØV TA= 150°C
Gate Reverse Current IGSS – 250 – 250 – 250 pA VGS = – 15V, VDS = ØV
2N4859, 2N4860, 2N4861 – 500 – 500 – 500 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 4 – 10 – 2 – 6 – 0.8 – 4 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 50 20 100 8 80 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 250 250 250 pA VDS = 15V, VGS = – 10V
500 500 500 nA VDS = 15V, VGS = – 10V TA= 150°C
Drain Source ON Voltage VDS(ON) 0.75 0.5 0.5 V VGS = ØV, ID= ( )
(20) (10) (5) (mA)
Dynamic Electrical Characteristics
Common Source ON Resistance rds(on) 25 40 60 ΩVGS = ØV, ID= Ø A f = 1 kHz
Common Source Input Capacitance Ciss 18 18 18 pF VDS = ØV, VGS = – 10V f = 1 MHz
Common Source Reverse Crss 888pFV
DS = ØV, VGS = – 10V f = 1 MHz
Transfer Capacitance
Switching Characteristics 6610ns
Turn ON Delay Time td(on) (20) (10) (5) (mA)
[–10] [– 6] [– 4] [V] VDD = 10V, VGS = ØV
3410ns
ID(ON) = ( )
Rise Time tr(20) (10) (5) (mA) VGS(OFF) = [ ]
[–10] [– 6] [– 4] [V] (2N4856, 2N4859) RL= 465Ω
25 50 100 ns (2N4857, 2N4860) RL= 953Ω
Turn OFF Delay Time td(off) (20) (10) (5) (mA) (2N4858, 2N4861) RL= 1910Ω
[–10] [– 6] [– 4] [V]
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Databook.fxp 1/14/99 11:30 AM Page B-15
B-16 01/99
2N4856A, 2N4857A, 2N4858A, 2N4859A, 2N4860A, 2N4861A
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at TA= 25¡C
2N4856A, 2N4857A, 2N4858A 2N4859A, 2N4860A, 2N4861A
Reverse Gate Source Voltage – 40 V – 30 V
Reverse Gate Drain Voltage – 40 V – 30 V
Continuous Device Dissipation 1.8 W 1.8 W
Continuous Forward Gate Current 50 mA 50 mA
Power Derating 10 mA/°C 10 mA/°C
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMP4856A, SMP4857A, SMP4858A,
SMP4859A, SMP4860A, SMP4861A
2N4856A 2N4857A 2N4858A
At 25°C free air temperature: 2N4859A 2N4860A 2N4861A Process NJ132
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 – 40 V IG= – 1µA, VDS = ØV
2N4856A, 2N4857A, 2N4858A
Gate Source Breakdown Voltage V(BR)GSS – 30 – 30 – 30 V IG= – 1µA, VDS = ØV
2N4859A, 2N4860A, 2N4861A
Gate Reverse Current IGSS – 250 – 250 – 250 pA VGS = – 20V, VDS = ØV
2N4856A, 2N4857A, 2N4858A – 500 – 500 – 500 nA VGS = – 20V, VDS = ØV TA= 150°C
Gate Reverse Current IGSS – 250 – 250 – 250 pA VGS = – 15V, VDS = ØV
2N4859A, 2N4860A, 2N4861A – 500 – 500 – 500 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 4 – 10 – 2 – 6 – 0.8 – 4 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 50 20 100 8 80 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 250 250 250 pA VDS = 15V, VGS = – 10V
500 500 500 nA VDS = 15V, VGS = – 10V TA= 150°C
Drain Source ON Voltage VDS(ON) 0.75 0.5 0.5 V VGS = ØV, ID= ( )
(20) (10) (5) (mA)
Dynamic Electrical Characteristics
Common Source ON Resistance rds(on) 25 40 60 ΩVGS = ØV, ID= Ø A f = 1 kHz
Common Source Input Capacitance Ciss 10 10 10 pF VDS = ØV, VGS = – 10V f = 1 MHz
Common Source Reverse Crss 4 3.5 3.5 pF VDS = ØV, VGS = – 10V f = 1 MHz
Transfer Capacitance
Switching Characteristics 568ns
Turn ON Delay Time td(on) (20) (10) (5) (mA)
[–10] [– 6] [– 4] [V] VDD = 10V, VGS = ØV
348ns
ID(ON) = ( )
Rise Time tr(20) (10) (5) (mA) VGS(OFF) = [ ]
[–10] [– 6] [– 4] [V] (2N4856A, 2N4859A) RL= 464Ω
25 40 80 ns (2N4857A, 2N4860A) RL= 953Ω
Turn OFF Delay Time td(off) (20) (10) (5) (mA) (2N4858A, 2N486A1) RL= 1910Ω
[–10] [– 6] [– 4] [V]
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Databook.fxp 1/14/99 12:00 PM Page B-16
01/99 B-17
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Gate Current 50 mA
Continuous Device Power Dissipation 300mW
Power Derating 1.7 mW/°C
Storage Temperature Range – 65°C to + 200°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP4867, SMP4867A, SMP4868,
SMP4868A, SMP4869, SMP4869A
2N4867 2N4868 2N4869
At 25°C free air temperature: 2N4867A 2N4868A 2N4869A Process NJ16
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 – 40 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 0.25 – 0.25 – 0.25 nA VGS = – 30V, VDS = ØV
– 0.25 – 0.25 – 0.25 µA VGS = – 30V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 0.7 – 2 – 1 – 3 – 1.8 – 5 V VDS = 20V, ID= 1 µA
Drain Saturation Current (Pulsed) IDSS 0.4 1.2 1 3 2.5 7.5 mA VDS = 20V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 700 2000 1000 3000 1300 4000 µS VDS = 20V, VGS = ØV f = 1 kHz
Transconductance
Common Source Output Conductance gos 1.5 4 10 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 25 25 25 pF VDS = 20V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 555pFV
DS = 20V, VGS = ØV f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit ¯eN20 20 20 nV/√HZ VDS = 10V, VGS = ØV f = 10 Hz
Input Noise Voltage 10 10 10 nV/√HZ VDS = 10V, VGS = ØV f = 1 kHz
VDS = 10V, VGS = ØV f = 1 kHz
Noise Figure NF 1 1 1 dB (2N4867, 68, 69) RG= 20 kΩ
(2N4867A, 68A, 69A) RG= 5 kΩ
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Databook.fxp 1/14/99 12:00 PM Page B-17
B-18 01/99
2N5020, 2N5021
P-Channel Silicon Junction Field-Effect Transistor
¥ Analog Switches Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
Storage Temperature Range – 65°C to + 200°C
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
Surface Mount
SMP5020, SMP5021
At 25°C free air temperature: 2N5020 2N5021 Process PJ32
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GDO 25 25 V IG= 1µA, VDS = ØV
Gate Reverse Current IGSS 11nAV
GS = 15V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) 0.3 1.5 0.5 2.5 V VDS = – 15V, ID= 1 nA
Drain Saturation Current (Pulsed) IDSS – 0.3 – 1.2 – 1 – 3.5 mA VDS = – 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 1 3.5 1.5 6 mS VDS = – 15V, VGS = ØV
Forward Transconductance
Common Source Output Conductance gos 20 20 µS VDS = – 15V, VGS = ØV
Common Source Input Capacitance Ciss 25 25 pF VDS = – 15V, VGS = ØV f = 1 MHz
Common Source Crss 77pFV
DS = – 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
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Databook.fxp 1/13/99 2:09 PM Page B-18
01/99 B-19
2N5114, 2N5115, 2N5116
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Gate Current 50 mA
Continuous Device Power Dissipation 500mW
Power Derating 3 mW/°C
Storage Temperature Range – 65°C to + 200°C
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
At 25°C free air temperature: 2N5114 2N5115 2N5116 Process PJ99
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 30 30 30 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS 500 500 500 pA VGS = 20V, VDS = ØV
111µAV
GS = 20V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) 5103614V V
DS = – 15V, IG= – 1 nA
Gate Source Forward Voltage VGS(F) – 1– 1– 1VV
DS = ØV, IG= – 1 mA
Drain Saturation Current (Pulsed) IDSS – 30 – 90 mA VGS = ØV, VDS = – 18V
– 15 – 60 – 5 – 25 mA VGS = ØV, VDS = – 15V
– 500 pA VDS = – 15V, VGS = 12V
– 1 µA VDS = – 15V, VGS = 12V TA= 150°C
Drain Cutoff Current ID(OFF) – 500 pA VDS = – 15V, VGS = 7V
– 1 µA VDS = – 15V, VGS = 7V TA= 150°C
– 500 pA VDS = – 15V, VGS = 5V
– 1 µA VDS = – 15V, VGS = 5V TA= 150°C
– 1.3 V VGS = ØV, ID= – 15 mA
Drain Source ON Voltage VDS(ON) – 0.8 V VGS = ØV, ID= – 7 mA
– 0.6 V VGS = ØV, ID= – 3 mA
Static Drain Source ON Resistance rDS(ON) 75 100 150 ΩVGS = ØV, ID= – 1 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 75 100 150 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source Input Capacitance Ciss 25 25 27 pF VDS =– 15V, VGS = ØV f = 1 MHz
Common Source Reverse 7pFV
DS = ØV, VGS = 12V f = 1 MHz
Transfer Capacitance Crss 7pFV
DS = ØV, VGS = 7V f = 1 MHz
7pF V
DS = ØV, VGS = 5V f = 1 MHz
Switching Characteristics 2N5114 2N5115 2N5116
Turn ON Delay Time td(on) 61025ns
VDD – 10 – 6 – 6 V
Rise Time tr10 20 35 ns VGG 20 12 8 V
Turn OFF Delay Time td(off) 6820ns
RL130 910 2000 Ω
Fall Time tf15 30 60 ns RG100 220 390 Ω
ID(ON) – 15 – 7 – 3 mA
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Databook.fxp 1/14/99 11:31 AM Page B-19
B-20 01/99
2N5397, 2N5398
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise
¥ High Power Gain
¥ High Transconductance
¥ Mixers
¥ Oscillators
¥ VHF Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Drain Source Voltage 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 1.7 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
Surface Mount
SMP5397, SMP5398
At 25°C free air temperature: 2N5397 2N5398 Process NJ26L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1 µA, VDS = ØV
Gate Source Forward Voltage VGS(F) 11VI
G= 1 mA, VDS = ØV
Gate Reverse Current IGSS – 0.1 – 0.1 nA VGS = – 15V, VDS = ØV
– 0.1 – 0.1 µA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 6– 1– 6 V V
DS = 10V, ID= 1 nA
Drain Saturation Current (Pulsed) IDSS 10 30 5 40 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 5.5 9 5 10 mS VDG = 10V, ID= 10 mA f = 450 MHz
Forward Transconductance
Common Source | Yfs | 6 10 5.5 10 mS VDS = 10V, ID= 10 mA f = 1 kHz
Forward Transfer Admittance
Common Source Output Conductance | gos | 0.4 0.5 mS VDG = 10V, ID= 10 mA f = 450 MHz
Common Source Input Admittance | Yos | 0.2 0.4 mS VDS = 10V, ID= 10 mA f = 1 kHz
Common Source Input Conductance gis 23mSV
DG = 10V, ID= 10 mA f = 450 MHz
Common Source Input Capacitance Ciss 5 5.5 pF VDG = 15V, VGS = ØV f = 1 kHz
Common Source Crss 1.2 1.3 pF VDG = 15V, VGS = ØV f = 1 kHz
Reverse Transfer Capacitance
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Databook.fxp 1/13/99 2:09 PM Page B-20
01/99 B-21
2N5460, 2N5461, 2N5462
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage 40 V
Continuous Forward Gate Current – 10 mA
Continuous Device Power Dissipation 310 mW
Power Derating 2.8 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMP5460, SMP5461, SMP5462
At 25°C free air temperature: 2N5460 2N5461 2N5462 Process PJ32
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 40 40 40 V IG= 10µA, VDS = ØV
Gate Reverse Current IGSS 555nAV
GS = 20V, VDS = ØV
111µAV
GS = 20V, VDS = ØV TA= 100°C
Gate Source Cutoff Voltage VGS(OFF) 0.75 6 1 7.5 1.8 9 V VDS = – 15V, ID= – 1 µA
0.8 4.5 V VDS = – 15V, ID= – 100 µA
Gate Source Voltage VGS 0.8 4.5 V VDS = – 15V, ID= – 200 µA
1.5 6 V VDS = – 15V, ID= – 400 µA
Drain Saturation Current (Pulsed) IDSS – 1– 5– 2– 9– 4– 16mA V
DS = – 15V, VGS = ØV
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 2 0.8 0.4 kΩVGS = ØV, ID= Ø A f = 1 kHz
Common Source Forward Transadmittance |Yfs | 1 4 1.5 5 2 6 mS VDS = – 15V, VGS = ØV f = 1 kHz
Common Source Output Admittance |Yos | 757575µSV
DS = – 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 777pFV
DS = – 15V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 222pFV
DS = – 15V, VGS = ØV f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit ¯eN2.5 2.5 2.5 dB VDS = – 15V, VGS = ØV f = 100 Hz,
Input Noise Voltage BW = 1 Hz
Noise Figure NF 115 115 115 nV/√Hz VDS = – 15V, VGS = ØV, f = 100 Hz
RG= 1MΩ
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¥ General Purpose
Amplifiers
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Databook.fxp 1/13/99 2:09 PM Page B-21
B-22 01/99
2N5484, 2N5485, 2N5486
N-Channel Silicon Junction Field-Effect Transistor
¥ VHF/UHF Amplifiers Absolute maximum ratings at TA= 25¡C
Reverse Gate Source Voltage – 25 V
Reverse Gate Drain Voltage – 25 V
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMP5484, SMP5485, SMP5486
At 25°C free air temperature: 2N5484 2N5485 2N5486 Process NJ26
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 – 25 V IG= 1µA, VDS = ØV
Gate Reverse Current IGSS – 1– 1– 1nAV
GS = – 20V, VDS = ØV
– 0.2 – 0.2 – 0.2 µA VGS = – 20V, VDS = ØV TA= 100°C
Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 3 – 0.5 – 4 – 2 – 6 V VDS = 15V, ID= 10 nA
Drain Saturation Current (Pulsed) IDSS 15410820mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Forward Transconductance Re(Yfs) 2500 µS VDS = 15V, VGS = ØV f = 100 MHz
3000 3500 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Forward Transadmittance Yfs 3000 6000 3500 7000 4000 8000 µS VDS = 15V, VGS = ØV f = 1 kHz
Input Admittance Re(Yis) 100 µS VDS = 15V, VGS = ØV f = 100 MHz
1000 1000 µS VDS = 15V, VGS = ØV f = 400 MHz
Output Conductance Re(Yos) 75 µS VDS = 15V, VGS = ØV f = 100 MHz
100 100 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Output Admittance Yos 50 60 75 µS VDS = 15V, VGS = ØV f = 1 MHz
Common Source Input Capacitance Ciss 555pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 111pFV
DS = 15V, VGS = ØV f = 1 MHz
Transfer Capacitance
Output Capacitance Coss 222pFV
DS = 15V, VGS = ØV f = 1 MHz
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Databook.fxp 1/13/99 2:09 PM Page B-22
01/99 B-23
2N5911, 2N5912
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Continuous Forward Gate Current 50 mA
Total Device Power Dissipation 500 mW
Power Derating 4 mW°C
Storage Temperature Range –65°C to + 200°C
SOIC-8 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1,
4 Case, 5 Source 2, 6 Drain 2,
7 Gate 2, 8 Omitted
Surface Mount
SMP5911, SMP5912
At 25°C free air temperature: 2N5911 2N5912 Process NJ30L or NJ36D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV
– 250 – 250 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Operating Current IG– 100 – 100 pA VDG = 10V, ID= 5 mA
– 100 – 100 nA VDG = 10V, ID= 5 mA TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 5– 1– 5 V V
DS = 10V, ID= 1 nA
Gate Source Voltage VGS – 0.3 – 4 – 0.3 – 4 V VDS = 10V, ID= 5 mA
Drain Saturation Current (Pulsed) IDSS 740740mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 5000 10000 5000 10000 µS VDG = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance 5000 10000 5000 10000 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source gos 100 100 µS VDG = 10V, ID= 5 mA f = 1 kHz
Output Conductance 150 150 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source Input Capacitance Ciss 55pFV
DG = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 1.2 1.2 pF VDG = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit Input Noise Voltage ¯eN20 20 nV/√Hz VDG = 10V, ID= 5 mA f = 10 kHz
Noise Figure NF 1 1 dB VDG = 10V, ID= 5 mA f = 10 kHz
RG= 100KΩ
Differential Gate Current IG1 – IG2 20 20 nA VDG = 10V, ID= 5 mA TA= 125°C
Saturation Drain Current Ratio IDSS1 / IDSS2 0.95 1 0.95 1 VDG = 20V, VGS = ØV
Differential Gate Source Voltage | VGS1 – VGS2 |10 15 mV VDG = 10V, ID= 5 mA
TA= 25°C,
Gate Source Voltage ∆VGS1– VGS2 20 40 mV VDG = 10V, ID= 5 mA TB= 125°C
Differential Drift ∆TTA= – 55°C,
20 40 mV VDG = 10V, ID= 5 mA TB= 25°C
Transconductance Ratio gfs1 / gfs2 0.9 1 0.85 1 VDG = 10V, ID= 5 mA f = 1 kHz
¥ Wideband Differential
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/14/99 11:31 AM Page B-23
B-24 01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
¥ High Voltage Absolute maximum ratings at TA= 25¡C
2N6449 2N6450
Reverse Gate Source Voltage – 300 V – 200 V
Reverse Gate Drain Voltage – 300 V – 200 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 800 mW 800 mW
Power Derating 6.4 mW/°C 6.4 mW/°C
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: 2N6449 2N6450 Process NJ42
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 300 – 200 V IG= – 10 µA, VDS = ØV
– 100 nA VGS = – 150V, VDS = ØV
Gate Reverse Current IGSS – 100 nA VGS = – 100V, VDS = ØV
– 100 µA VGS = – 150V, VDS = ØV TA= 150°C
– 100 µA VGS = – 100V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 2 – 15 – 2 – 15 V VDS = 30V, ID= 4 nA
Drain Saturation Current (Pulsed) IDSS 210210mAV
DS = 30V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Yfs 0.5 3 0.5 3 mS VDS = 30V, VGS = ØV f = 1 kHz
Transfer Admittance
Common Source Output Conductance Yos 100 100 µS VDS = 30V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 20 20 pF VDS = 30V, VGS = ØV f = 1 MHz
Common Source Crss 2.5 2.5 pF VDS = 30V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-24
01/99 B-25
2N6451, 2N6452
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
2N6451 2N6452
Reverse Gate Source Voltage – 20 V – 25 V
Reverse Gate Drain Voltage – 20 V – 25 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 360 mW 360 mW
Power Derating 2.88 mW/°C 2.88 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: 2N6451 2N6452 Process NJ132L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 – 25 V IG= – 1 µA, VDS = ØV
– 0.1 nA VGS = – 10V, VDS = ØV
Gate Reverse Current IGSS – 0.5 nA VGS = – 15V, VDS = ØV
– 0.2 µA VGS = – 10V, VDS = ØV TA= 125°C
– 1 µA VGS = – 15V, VDS = ØV TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 3.5 – 0.5 – 3.5 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 520520mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source | Yfs |15 30 15 30 mS VDS = 10V, ID= 5 mA f = 1 kHz
Forward Transmittance mS VDS = 10V, ID= 15 mA f = 1 kHz
Common Source | Yos |50 50 µS VDS = 10V, ID= 5 mA f = 1 kHz
Output Conductance µS VDS = 10V, ID= 15 mA f = 1 kHz
Common Source Ciss 25 25 pF VDS = 10V, ID= 5 mA f = 1 kHz
Input Capacitance pF VDS = 10V, ID= 15 mA f = 1 kHz
Common Source Reverse Crss 55pFV
DS = 10V, ID= 5 mA f = 1 kHz
Transfer Capacitance pF VDS = 10V, ID= 15 mA f = 1 kHz
Equivalent Short Circuit ¯eN510nV/√Hz VDS = 10V, ID= 5 mA f = 10 kHz
Input Noise Voltage 38nV/√Hz VDS = 10V, ID= 5 mA f = 1 kHz
Noise Figure NF 1.5 2.5 dB VDS = 10V, ID= 5 mA f = 10 Hz
RG= 10 kΩ
¥ Audio Amplifiers
¥ Low-Noise, High Gain
Amplifiers
¥ Low-Noise Preamplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-25
B-26 01/99
2N6453, 2N6454
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ Low-Noise, High Gain
Amplifiers
¥ Low-Noise Preamplifiers
Absolute maximum ratings at TA= 25¡C
2N6453 2N6454
Reverse Gate Source Voltage – 20 V – 25 V
Reverse Gate Drain Voltage – 20 V – 25 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 360 mW 360 mW
Power Derating 2.88 mW/°C 2.88 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: 2N6453 2N6454 Process NJ132L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 – 25 V IG= – 1 µA, VDS = ØV
– 0.1 nA VGS = – 10V, VDS = ØV
Gate Reverse Current IGSS – 0.5 nA VGS = – 15V, VDS = ØV
– 0.2 µA VGS = – 10V, VDS = ØV TA= 125°C
– 1 µA VGS = – 15V, VDS = ØV TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 0.75 – 5 – 0.75 – 5 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 15 50 15 50 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source | Yfs |mS VDS = 10V, ID= 5 mA f = 1 kHz
Forward Transmittance 20 40 20 40 mS VDS = 10V, ID= 15 mA f = 1 kHz
Common Source | Yos |µS VDS = 10V, ID= 5 mA f = 1 kHz
Output Conductance 100 100 µS VDS = 10V, ID= 15 mA f = 1 kHz
Common Source Ciss pF VDS = 10V, ID= 5 mA f = 1 kHz
Input Capacitance 25 25 pF VDS = 10V, ID= 15 mA f = 1 kHz
Common Source Reverse Crss pF VDS = 10V, ID= 5 mA f = 1 kHz
Transfer Capacitance 55pFV
DS = 10V, ID= 15 mA f = 1 kHz
Equivalent Short Circuit ¯eN5 10 nV/√Hz VDS = 10V, ID= 5 mA f = 10 kHz
Input Noise Voltage 3 8 nV/√Hz VDS = 10V, ID= 5 mA f = 1 kHz
Noise Figure NF 1.5 2.5 dB VDS = 10V, ID= 5 mA f = 10 Hz
RG= 10 kΩ
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-26
01/99 B-27
2N6550
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA=25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuious Forward Gate Current 50 mA
Continuous Device Power Dissipation 400 mW
Power Derating 2.3 mW/°C
Junction Temperature (Operating & Storage) – 65°C to +200°C
TOÐ46 Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate & Case
At 25°C free air temperature: 2N6550 Process NJ450L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= 10 µA, VDS = ØV
Gate Leakage Current IGSS – 3 nA VGS = – 10V, VDS = ØV
– 0.1 µA VGS = – 10V, VDS = ØV TA= 85°C
Zero Gate Voltage Drain Current (Pulsed) IDSS 10 100 250 mA VDS = 10V, VGS = Ø V
Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 3 V VDS = 10V, ID= 0.1 mA
Dynamic Electrical Characteristics
Transconductance gfs 25 150 mS VDS = 10V, ID= 10 mA f = 1 kHz
Common Source Output Conductance |Yos| 150 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Source Input Capacitance Ciss 30 35 pF VDS = 10V, ID= 10 mA f = 140 kHz
Common Source Reverse Transfer Capacitance Crss 10 20 pF VDS = 10V, VDS = ØV f = 140 kHz
1.4 2 nV/√Hz VDS = 5V, ID= 10 mA f = 1 kHz
Equivalent Short Circuit ¯eN610
nV/√Hz VDS = 5V, ID= 10 mA f = 10 Hz
Input Noise Voltage ¯eNTotal 0.4 0.6 µVrms VDS = 5V, ID= 10 mA f = 10 kHz
to 20 kHz
Equivalent Open Circuit Input Noise Current ¯
iN0.1 pA/√Hz RS< 100 KΩf = 1 kHz
¥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-27
B-28 01/99
IF140, IF140A
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain
Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 375 mW
Power Derating 3 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: IF140 IF140A Process NJ14AL
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 – 0.1 nA VGS = – 15V, VDS = ØV
– 0.2 – 0.2 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 6 – 6 V VDS = 15V, ID= 5 nA
Gate Source Voltage VGS – 5 – 2.5 – 6 V VDS = 15V, ID= 50 µA
Gate Source Forward Voltage VGS(F) 11VV
DS = Ø, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 515515mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Transmittance Yfs 4.5 4.5 mS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Output Conductance Yos 0.05 0.05 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 33pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 0.6 0.6 pF VDS = 15V, VGS = ØV f = 1 MHz
Transfer Capacitance
Typ Typ
Equivalent Short Circuit ¯eN44
nV/√Hz VDS = 12V, VGS = ØV f = 10 Hz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-28
01/99 B-29
IF142
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 375 mW
Power Derating 3 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: IF142 Process NJ14AL
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 15V, VDS = ØV
– 0.2 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 6 V VDS = 15V, ID= 5 nA
Gate Source Voltage VGS – 5 V VDS = 15V, ID= 50 µA
Gate Source Forward Voltage VGS(F) 1VV
DS = Ø, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 515mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Yfs 3.5 mS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transmittance
Common Source Yos 0.05 µS VDS = 15V, VGS = ØV f = 1 kHz
Output Conductance
Common Source Input Capacitance Ciss 3pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 0.6 pF VDS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN4 nV/√Hz VDS = 12V, VGS = ØV f = 10 Hz
Input Noise Voltage
¥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 1:50 PM Page B-29
B-30 01/99
IF1320
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 225 mW
Power Derating 1.8 mW°C
Storage Temperature Range – 65°C to 200°C
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: IF1320 Process NJ132L
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VDS = ØV, VGS = – 10V
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 1.5 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 520mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 15 mS VDS = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 5pFV
DS = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN2.5 nV/√Hz VDS = 10V, ID= 5 mA f = 1 kHz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/14/99 1:50 PM Page B-30
01/99 B-31
IF1330
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 225 mW
Power Derating 1.8 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: IF1330 Process NJ132H
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VDS = ØV, VGS = – 10V
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 1.5 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 520mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 10 mS VDS = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 5pFV
DS = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN2.5 nV/√Hz VDS = 10V, ID= 5 mA f = 1 kHz
Input Noise Voltage
¥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 1:50 PM Page B-31
B-32 01/99
IF1331
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 225 mW
Power Derating 1.8 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: IF1331 Process NJ132H
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VDS = ØV, VGS = – 10V
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 1.5 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 520mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 10 mS VDS = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 5pFV
DS = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN2.5 nV/√Hz VDS = 10V, ID= 5 mA f = 1 kHz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/14/99 12:56 PM Page B-32
01/99 B-33
IF1801
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings = TAat 25¡C
Reverse Gate Source Voltage & Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: IF1801 Process NJ1800DL
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 10V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 2 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 30 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 50 mS VDS = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 100 pF VDS = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 50 pF VDS = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN0.5 nV/√Hz VDG = 4V, ID= 5 mA f = 1 kHz
Input Noise Voltage
¥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
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Databook.fxp 1/13/99 2:09 PM Page B-33
B-34 01/99
IF3601
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier Absolute maximum ratings = TAat 25¡C
Reverse Gate Source Voltage & Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: IF3601 Process NJ3600L
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 10V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 2 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 30 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics Typ
Common Source gfs 750 mS VDS = 10V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 300 pF VDS = ØV, VGS = – 4V f = 1 MHz
Common Source Crss 200 pF VDS = ØV, VGS = – 4V f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit ¯eN0.3 nV/√Hz VDG = 3V, ID= 5 mA f = 100 Hz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-34
01/99 B-35
IF3602
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings = TAat 25¡C
Reverse Gate Source Voltage & Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 4 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature: IF3602 Process NJ3600L
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.5 nA VGS = – 10V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 3 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 30 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics Typ
Common Source gfs 750 mS VDS = 10V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 300 pF VDS = ØV, VGS = – 4V f = 1 MHz
Common Source Crss 200 pF VDS = ØV, VGS = – 4V f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit ¯eN0.3 nV/√Hz VDG = 3V, ID= 5 mA f = 100 Hz
Input Noise Voltage
Max
Differential Gate Source Voltage |VGS1 – VGS2 |100 mV VDS = 10V, VGS = ØV
¥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
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Databook.fxp 1/13/99 2:09 PM Page B-35
B-36 01/99
IF4500
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 225 mW
Power Derating 1.8 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: IF4500 Process NJ450L
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 30V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 1.5 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 5mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 15 mS VDS = 15V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 35 pF VDS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 8pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN1.5 nV/√Hz VDS = 12V, VGS = ØV f = 1 kHz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/14/99 1:51 PM Page B-36
01/99 B-37
IF4501
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: IF4501 Process NJ450L
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 10V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 1.5 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 5mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 15 mS VDS = 15V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 35 pF VDS = 15V, ID= 5 mA f = 1 MHz
Common Source Crss 9pFV
DS = 15V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN1.5 nV/√Hz VDG = 12V, ID= 5 mA f = 1 kHz
Input Noise Voltage
¥ Low-Noise, High Gain Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-37
B-38 01/99
IF4510
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 1.8 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ236AB Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
At 25°C free air temperature: IF4510 Process NJ450H
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 15V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 1.5 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 5mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 15 mS VDS = 15V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 35 pF VDS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 8pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN1.5 nV/√Hz VDG = 12V, VGS = ØV f = 1 kHz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/14/99 1:51 PM Page B-38
01/99 B-39
IF4511
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 1.8 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: IF4511 Process NJ450H
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 30V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 1.5 V VDS = 15V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 5mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 15 mS VDS = 15V, ID= 5 mA f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 35 pF VDS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 8pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN1.5 nV/√Hz VDG = 12V, VGS = ØV f = 1 kHz
Input Noise Voltage
¥ Audio Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-39
B-40 01/99
IF9030
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: IF9030 Process NJ903L
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 0.1 nA VGS = – 10V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.35 – 2 V VDS = 10V, ID= 0.5 nA
Drain Saturation Current (Pulsed) IDSS 30 300 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 80 mS VDS = 10V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source Input Capacitance Ciss 60 pF VDS = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 20 pF VDS = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Typ
Equivalent Short Circuit ¯eN0.5 nV/√Hz VDG = 4V, ID= 5 mA f = 1 kHz
Input Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-40
01/99 B-41
IFN421, IFN422, IFN423
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Device Dissipation (Derate 3.2 mW/°C to 50°C) 400 mW
Total Device Dissipation (Derate 6 mW/°C to 150°C) 750 mW
Storage Temperature Range – 65°C to 200°C
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
At 25°C free air temperature: IFN421, IFN422, IFN423 Process NJ01
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 60 V IG= – 1 µA, VDS = ØV
Gate to Gate Breakdown Voltage BVG1G2 ±40 V IG= – 1 µA, ID= ØA, IS= ØA
Gate Reverse Current IGSS – 1 pA VGS = – 20V, VDS = ØV
– 1 nA VGS = – 20V, VDS = ØV TA= +125°C
Gate Operating Current IG– 0.25 pA VDS = 10V, ID= 30 µA
– 250 pA VDS = 10V, ID= 30 µA TA= +125°C
Gate Source Cutoff Voltage VGS(OFF) – 0.4 – 2 V VDS = 10V, ID= 1 nA
Gate Source Voltage VGS – 1.8 V VDS = 10V, ID= 30 µA
Drain Saturation Current (Pulsed) IDSS 60 1000 µA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs 100 1500 µS VDS = 10V, VGS = ØV f = 1 kHz
Common Source Output Conductance gos 3µSV
DS = 10V, ID= 30 µA f = 1 kHz
Common Source Input Capacitance Ciss 3pFV
DS = 10V, VGS = Ø V f = 1 MHz
Common Source Reverse Transfer Capacitance Crss 1.5 pF VDS = 10V, VGS = Ø V f = 1 MHz
Equivalent Circuit Input Noise Voltage ¯eN20 70 nV/√Hz VDS = 10V, ID= 30 µA f = 10 Hz
Noise Figure NF 1 dB VDS = 10V, ID= 30 µA f = 10 Hz
RG= 10 MΩ
Max - IFN421 IFN422 IFN423
Differential Gate Source Voltage |VGS1– VGS2|10 15 25 mV VDG = 10V, ID= 30 µA
Differential Gate Source Voltage |VGS1– VGS2|TA= – 55°C
10 25 40 µV/°C VDG = 10V, ID= 30 µA TB= 25°C
With Temperature ∆TTC= 125°C
Min - IFN421 IFN422 IFN423
Common Mode Rejection Ratio CMRR 90 80 80 dB VDG = 10V to 20V, ID= 30 µA
¥ Very High Input Impedance
Differential Amplifiers
¥ Electrometers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 12:22 PM Page B-41
B-42 01/99
IFN424, IFN425, IFN426
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Very High Impedance
Differential Amplifiers
¥ Electrometers
Absolute maximum ratings at TA= 25¡C
Device Dissapation (Derate 3.2 mW/°C to 50°C) 400 mW
Total Device Dissipation (Derate 6 mW/°C to 150 °C) 750 mW
Storage Temperature Range – 60 °C to 200 °C
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
At 25°C free air temperature: IFN424, IFN425, IFN426 Process NJ01
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 60 V IG= – 1 µA, VDS = ØV
Gate to Gate Breakdown Voltage BVG1G2 ±40 V IG= – 1 µA, ID= ØA, IS= ØA
Gate Reverse Current IGSS – 3 pA VGS = – 20V, VDS = ØV
– 3 nA VGS = – 20V, VDS = ØV TA= +125°C
Gate Operating Current IG– 0.5 pA VDS = 10V, ID= 30 µA
– 500 pA VDS = 10V, ID= 30 µA TA= +125°C
Gate Source Cutoff Voltage VGS(OFF) – 0.4 – 3 V VDS = 10V, ID= 1 nA
Gate Source Voltage VGS – 2.9 V VDS = 10V, ID= 30 µA
Drain Saturation Current (Pulsed) IDSS 60 1800 µA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs 100 1500 µS VDS = 10V, VGS = ØV f = 1 kHz
Common Source Output Conductance gos 3µSV
DS = 10V, ID= 30 µA f = 1 kHz
Common Source Input Capacitance Ciss 3pFV
DS = 10V, VGS = Ø V f = 1 MHz
Common Source Reverse Transfer Capacitance Crss 1.5 pF VDS = 10V, VGS = Ø V f = 1 MHz
Equivalent Short Circuit Input Noise Voltage ¯eN20 70 nV/√Hz VDS = 10V, ID= 30 µA f = 10 Hz
Noise Figure NF 1 dB VDS = 10V, ID= 30 µA f = 10 Hz
RG= 1 MΩ
Max - IFN424 IFN425 IFN426
Differential Gate Source Voltage |VGS1–V
GS2|10 15 25 mV VDG = 10V, ID= 30 µA
Differential Gate Source Voltage |VGS1–V
GS2|TA= – 55°C
10 25 40 µV/°C VDG = 10V, ID= 30 µA TB= 25°C
With Temperature ∆TTC= 125°C
Min - IFN424 IFN425 IFN426
Common Mode Rejection Ratio CMRR 90 80 80 dB VDG = 10V to 20V, ID= 30 µA
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/14/99 12:22 PM Page B-42
01/99 B-43
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 400 mW
Power Derating 2.3 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 5 Source,
6 Drain, 7 Gate
At 25°C free air temperature: IFN860 Process NJ450L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 20 V IG= – 1 µA, VDS = ØV
Gate Reverse Leakage Voltage IGSS 3nAV
GS = – 10V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 3 V VDS = 10V, ID= 100 µA
Drain Saturation Current (Pulsed) IDSS 10 mA VDS = 10V, VGS = ØV
Differential Gate Source Voltage |VGS1– VGS2|25 mV VDS = 10V, ID= 100 µA
Dynamic Electrical Characteristics
Transconductance gm25 40 mS VDS = 10V, ID= – 10 mA f = 1 kHz
Common Source Input Capacitance Ciss 30 35 pF VDS = 10V, ID= – 10 mA f = 1 MHz
Common Source Reverse Transfer Crss 17 20 pF VDS = 10V, ID= – 10 mA f = 1 MHz
Capacitance
Equivalent Short Circuit ¯eN2nV/√Hz VDG = 3V, ID= 10 mA f = 1 kHz
Input Noise Voltage
¥ Low-Noise Audio Amplifier
¥ Equivalent to Crystalonics
CD860
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 12:22 PM Page B-43
B-44 01/99
IFN5114, IFN5115, IFN5116
P-Channel Silicon Junction Field-Effect Transistor
¥ Analog Switches Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Gate & Case, 3 Drain
Surface Mount
SMP5114, SMP5115, SMP5116
At 25°C free air temperature: IFN5114 IFN5115 IFN5116 Process PJ99
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 30 30 30 V IG= – 1mA, VDS = ØV
Gate Reverse Current IGSS 222nAV
GS = 20V, VDS = ØV
10 10 10 µA VGS = 20V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) 5103614V V
DS = – 15V, IG= – 1 nA
Gate Source Forward Voltage VGS(F) – 1– 1– 1VV
DS = ØV, IG= – 1 mA
Drain Saturation Current (Pulsed) IDSS – 30 – 90 mA VDS = – 15V, VGS = 18V
– 15 – 60 – 5 – 25 mA VDS = – 15V, VGS = 15V
Drain Cutoff Current ID(OFF) – 2– 2– 2nAV
DS = – 15V, VGS = 12V
– 10 – 10 – 10 µA VDS = – 15V, VGS = 7V TA= 150°C
– 1.3 V VGS = ØV, ID= – 15 mA
Drain Source ON Voltage VDS(ON) – 0.8 V VGS = ØV, ID= – 7 mA
– 0.6 V VGS = ØV, ID= – 3 mA
Static Drain Source ON Resistance rDS(ON) 75 100 150 ΩVGS = ØV, ID= – 1 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 75 100 150 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source Input Capacitance Ciss 25 25 27 pF VDS =– 15V, VGS = ØV f = 1 MHz
Common Source Reverse 7pFV
DS = – 10V, VGS = 12V f = 1 MHz
Transfer Capacitance Crss 7pFV
DS = – 10V, VGS = 7V f = 1 MHz
7pF V
DS = – 10V, VGS = 5V f = 1 MHz
Switching Characteristics IFN5114 IFN5115 IFN5116
Turn ON Delay Time td(on) 61025ns
VDD – 10 – 6 – 6 V
Rise Time tr10 20 35 ns VGG 20 12 8 V
Turn OFF Delay Time td(off) 6820ns
RL130 910 2000 Ω
Fall Time tf15 30 60 ns RG100 220 390 Ω
ID(ON) – 15 – 7 – 3 mA
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/14/99 12:22 PM Page B-44
01/99 B-45
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 100 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: IFN5432 IFN5433 IFN5434 Process NJ903
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 – 25 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 200 – 200 – 200 pA VGS = – 15V, VDS = ØV
– 200 – 200 – 200 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 4 – 10 – 3 – 9 – 1 – 4 V VDS = 5V, IG= 3 nA
Drain Saturation Current (Pulsed) IDSS 150 100 30 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 200 200 200 pA VDS = 5V, VGS = – 10V
200 200 200 nA VDS = 5V, VGS = – 10V TA= 150°C
Drain Source ON Voltage VDS 50 70 100 mV VGS = ØV, ID= 10 mA
Static Drain Source ON Resistance rDS(ON) 25 7 10ΩVDS = ØV, ID= 10 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 5710ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source Input Capacitance Ciss 60 60 60 pF VDS = ØV, VGS = – 10V f = 1 MHz
Common Source Reverse Crss 20 20 20 pF VDS = ØV, VGS = – 10V f = 1 MHz
Transfer Capacitance
Switching Characteristics
Turn ON Delay Time td(on) 444ns
VDD = 1.5 V, VGS(ON) = ØV
Rise Time tr111ns
VGS(OFF) = – 12V, ID(ON) = 10 mA
Turn OFF Delay Time td(off) 666ns
(IFN5432) RL= 145 Ω
Fall Time tf30 30 30 ns (IFN5433) RL= 143 Ω
(IFN5433) RL= 140 Ω
¥ Analog Low On Resistance
Switches
¥ Choppers
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-45
B-46 01/99
IFN5564, IFN5565, IFN5566
N-Channel Dual Silicon Junction Field-Effect Transistor
¥ Wide Band Differential
Amplifier
¥ Commutators
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 650 mW
Power Derating 3.3 mW/°C
TOÐ71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature: IFN5564 IFN5565 IFN5566 Process NJ72
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 – 40 V IG= – 1µA, VDS = ØV
Gate Leakage Voltage IGSS – 100 – 100 – 100 pA VGS = – 20V, VDS = ØV
– 200 – 200 – 200 nA TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 3 – 0.5 – 3 – 0.5 – 3 V VDS = 15V, ID= 1 nA
Gate Source Voltage VGS(f) 111VV
DS = ØV, IG= 2 mA
Saturation Current (Pulsed) IDSS 530530530mAV
DS = 15V, VGS = ØV
Static Drain Source ON Resistance rDS(ON) 100 100 100 ΩID= 1 mA, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 7000 12500 7000 12500 7000 12500 µhmo VDG = 15V, ID= 2 mA f = 1 kHz
Forward Transconductance 7000 7000 7000 µhmo f = 100 MHz
Common Source Output Transconductance gos 45 45 45 µhmo VDS = 15V, ID= 2 mA f = 1 kHz
Common Source Input Capacitance Ciss 12 12 12 pF VDS = 15V, ID= 2 mA f = 1 MHz
Common Source Reverse Transfer Capacitance Crss 333pFV
DS = 15V, ID= 2 mA f = 1 MHz
Noise Figure NF 1 1 1 dB VDS = 15V, ID= 2 mA f = 10 Hz
RG= 1 MΩ
Equivalent Short Circuit Input Noise Voltage ¯eN50 50 50 nV/√Hz VDG = 15V, ID= 2 mA f = 10 Hz
Characteristics
Saturation Drain Current Ratio (Pulsed) IDSS1 0.95 1 0.95 1 0.95 1 – VDG = 15V, VGS = ØV
IDSS2 –
Differential Gate Source Voltage |VGS(1)– VGS(2)| 5 10 20 mV VDS = 15V, ID= 2 mA
Gate Source Voltage Differential Drift ∆|VGS(f)– VGS(f)|10 25 50 µV/°C VDS = 15V, TA= 25°C TB= 125°C
∆T 102550µV/°CI
D= 2 mA TA= 55°C TB= 25°C
Transconductance Ratio (Pulsed) gfs(1) 0.95 1 0.9 1 0.9 1 – VDS = 15V, ID= 2 mA
gfs(2) –
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-46
01/99 B-47
IFN5911, IFN5912
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
Storage Temperature Range – 65°C to 200°C
TOÐ78 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature: IFN5911 IFN5912 Process NJ30L or NJ36D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV
– 250 – 250 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Operating Current IG– 100 – 100 pA VDG = 10V, ID= 5 mA
– 100 – 100 nA VDG = 10V, ID= 5 mA TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 5– 1– 5 V V
DS = 10V, ID= 1 nA
Gate Source Voltage VGS – 0.3 – 4 – 0.3 – 4 V VDS = 10V, ID= 5 mA
Drain Saturation Current (Pulsed) IDSS 740740mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 3000 10000 3000 10000 µS VDG = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance 3000 10000 3000 10000 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source gos 100 100 µS VDG = 10V, ID= 5 mA f = 1 kHz
Output Conductance 150 150 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source Input Capacitance Ciss 55pFV
DG = 10V, ID= 5 mA f = 1 MHz
Common Source Crss 1.2 1.2 pF VDG = 10V, ID= 5 mA f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit ¯eN20 20 nV/√Hz VDG = 10V, ID= 5 mA f = 10 kHz
Input Noise Voltage
Noise Figure NF 1 1 dB VDG = 10V, ID= 5 mA f = 10 Hz
RG= 100 KΩ
Differential Gate Current |IG1|–|IG2|20 20nAV
DG = 10V, ID= 5 mA TA= 125°C
Saturation Drain Current Ratio IDSS1/IDSS2 0.95 1 0.95 1 VDS = 10V, VGS = ØV
Differential Gate Source Voltage VGS1 –V
GS2 10 15 mV VDG = 10V, I D= 5 mA
∆VGS1 –V
GS2 20 40 µV/°C VDG = 10V, ID= 5 mA TA= 25°C
Gate Source Voltage ∆TTB= 125°C
Differential Drift ∆VGS1 –V
GS2 20 40 µV/°C VDG = 10V, ID= 5 mA TA= – 55°C
∆TTB= 25°C
Transconductance Ratio gfs1/gfs2 0.95 1 0.95 1 VDG = 10V, ID= 5 mA f = 1 kHz
¥ VHF Amplifiers
¥ Wideband Differential
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 11:32 AM Page B-47
B-48 01/99
IFN6449, IFN6450
N-Channel Silicon Junction Field-Effect Transistor
¥ High Voltage Absolute maximum ratings at TA= 25¡C
IFN6449 IFN6450
Reverse Gate Source Voltage – 100 V – 100 V
Reverse Gate Drain Voltage – 300 V – 200 V
Continuous Forward Gate Current 10 mA 10 mA
Continuous Device Power Dissipation 800 mW 800 mW
Power Derating 6.4 mW/°C 6.4 mW/°C
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: IFN6449 IFN6450 Process NJ42
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Drain Breakdown Voltage V(BR)GDO – 300 – 200 V IG= – 10 µA, IS= ØA
Gate Source Breakdown Voltage V(BR)GSO – 100 – 100 V IG= – 10 µA, ID= ØA
Gate Reverse Current IGSS – 100 nA VGS = – 80V, VDS = ØV
– 100 µA VGS = – 80V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 2 – 15 – 2 – 15 V VDS = 30V, ID= 4 nA
Drain Saturation Current (Pulsed) IDSS 210210mAV
DS = 30V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward |Yfs | 0.5 3 0.5 3 mS VDS = 30V, VGS = ØV f = 1 kHz
Transfer Transmittance
Common Source Output Conductance gos 100 100 µS VDS = 30V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 10 10 pF VDS = 30V, VGS = ØV f = 1 MHz
Common Source Crss 55pFV
DS = 30V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
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Databook.fxp 1/13/99 2:09 PM Page B-48
01/99 B-49
J108, J109
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ108, SMPJ109
At 25°C free air temperature: J108 J109 Process NJ450
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 3 – 3 nA VGS = – 15V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 3 – 10 – 2 – 6 V VDS = 5V, ID= 1 µA
Drain Saturation Current (Pulsed) IDSS 80 40 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 33nAV
DS = 5V, VGS = – 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance r ds(on) 812ΩVGS = Ø, VDS < = 0.1V f = 1 kHz
Drain Gate Capacitance Cgd 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz
Source Gate Capacitance Cgs 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = ØV f = 1 MHz
Switching Characteristics Typ Typ
Turn ON Delay Time td(on) 33ns J108 J109
Rise Time tr11nsV
DD 1.5 1.5 V
Turn OFF Delay Time td(off) 44ns
VGS(OFF) – 12 – 7 V
Fall Time tf18 18 ns RL150 150 Ω
¥ Choppers
¥ Commutators
¥ Analog Switches
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/14/99 1:02 PM Page B-49
B-50 01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ110, SMPJ110A
At 25°C free air temperature: J110 J110A Process NJ450
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 3 – 3 nA VGS = – 15V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 4 – 0.5 – 4 V VDS = 5V, ID= 1 µA
Drain Saturation Current (Pulsed) IDSS 10 10 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 33nAV
DS = 5V, VGS = – 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance r ds(on) 18 25 ΩVGS = Ø, VDS < = 0.1V f = 1 kHz
Drain Gate Capacitance Cgd 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz
Source Gate Capacitance Cgs 15 15 pF VDS = ØV, VGS = – 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = ØV f = 1 MHz
Switching Characteristics Typ Typ
Turn ON Delay Time td(on) 44ns J110 J110A
Rise Time tr11nsV
DD 1.5 1.5 V
Turn OFF Delay Time td(off) 66ns
VGS(OFF) – 5 – 5 V
Fall Time tf30 30 ns RL150 150 Ω
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-50
01/99 B-51
J111, J112, J113
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 35 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ111, SMPJ112, SMPJ113
At 25°C free air temperature J111 J112 J113 Process NJ132
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 35 – 35 – 35 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 1– 1– 1nAV
GS = – 15V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 3 – 10 – 1 – 5 – 3 V VDS = 5V, ID= 1 µA
Drain Saturation Current (Pulsed) IDSS 20 5 2 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) – 1– 1– 1nAV
DS = 15V, VGS = – 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 30 50 100 ΩVGS = ØV, VDS = 0.1V f = 1 kHz
Drain Gate Capacitance Cdg 555pFV
DS = ØV, VGS = – 10V f = 1 MHz
Source Gate Capacitance Cgs 555pFV
DS = ØV, VGS = – 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd + Cgs 28 28 28 pF VDS = VGS = ØV f = 1 MHz
Switching Characteristics Typ Typ Typ
Turn ON Delay Time td(on) 777ns J111 J112 J113
Rise Time tr662nsV
DD 10 10 10 V
Turn OFF Delay Time td(off) 20 20 20 ns VGS(OFF) – 12 – 7 – 5 V
Fall Time tf15 15 15 ns RL800 1600 3200 Ω
¥ Choppers
¥ Commutators
¥ Analog Switches
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-51
B-52 01/99
J174, J175
P-Channel Silicon Junction Field-Effect Transistor
¥Choppers
¥Commutators
¥Analog Switches
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Gate, 3 Source
Surface Mount
SMPJ174, SMPJ175
At 25°C free air temperature: J174 J175 Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 30 30 V IG= 1 µA, VDS = ØV
Gate Reverse Current IGSS 11nAV
GS = 20V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) 51036VV
DS = – 15V, ID= – 10 nA
Drain Saturation Current (Pulsed) IDSS – 20– 125– 7 – 70 mA VDS = – 15V, VGS = ØV
Drain Cutoff Current ID(OFF) – 1 – 1 nA VDS = – 15V, VGS = 10V
Dynamic Electrical Characteristics Max Max
Drain Source ON Resistance rds(on) 85 85 Ω VGS = Ø, VDS < = 0.1V f = 1 kHz
Dynamic Electrical Characteristics Typ Typ
Drain Gate Capacitance Cgd 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz
Source Gate Capacitance Cgs 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd + Cgs 32 32 pF VDS = VGS = ØV f = 1 MHz
Switching Characteristics
J174 J175
Turn ON Delay Time td(on) 25ns
VDD – 10 – 6 V
Rise Time tr510ns
VGS(OFF) 12 8 V
Turn OFF Delay Time td(off) 510ns
RL560 1.2k Ω
Fall Time tf10 20 ns VGS(ON) ØØV
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-52
01/99 B-53
J176, J177
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Gate, 3 Source
Surface Mount
SMPJ176, SMPJ177
At 25°C free air temperature: J176 J177 Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 30 30 V IG= 1 µA, VDS = ØV
Gate Reverse Current IGSS 11nAV
GS = 20V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) 1 4 0.8 2.25 V VDS = – 15V, ID= – 10 nA
Drain Saturation Current (Pulsed) IDSS – 2 – 35 – 1.5 – 20 mA VDS = – 15V, VGS = ØV
Drain Cutoff Current ID(OFF) – 1 – 1 nA VDS = – 15V, VGS = 10V
Dynamic Electrical Characteristics Max Max
Drain Source ON Resistance r ds(on) 250 300 ΩVGS = Ø, VDS < = 0.1V f = 1 kHz
Dynamic Electrical Characteristics Typ Typ
Drain Gate Capacitance Cgd 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz
Source Gate Capacitance Cgs 5.5 5.5 pF VDS = ØV, VGS = 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd + Cgs 32 32 pF VDS = VGS = ØV f = 1 MHz
Switching Characteristics
J176 J177
Turn ON Delay Time td(on) 15 20 ns VDD – 6 – 6 V
Rise Time tr20 25 ns VGS(OFF) 63V
Turn OFF Delay Time td(off) 15 20 ns RL5.6k 10k Ω
Fall Time tf20 25 ns VGS(ON) ØØV
¥ Choppers
¥ Commutators
¥ Analog Switches
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-53
B-54 01/99
J201, J202
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ General Purpose Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ201, SMPJ202
At 25°C free air temperature: J201 J202 Process NJ16
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 20V, VDS = ØV
Gate Operating Current IG– 10 – 10 pA VDG = 20V, ID= IDSS(min)
Gate Source Cutoff Voltage VGS(OFF) – 0.3 – 1.5 – 0.8 – 4 V VDS = 20V, ID= 10 nA
Drain Saturation Current (Pulsed) IDSS 0.2 1 0.9 4.5 mA VDSS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 500 1000 µS VDS = 20V, VGS = ØV f = 1 kHz
Transconductance
Common Source Output Conductance gos 1 3.5 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 44pFV
DS = 20V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 11pFV
DS = 20V, VGS = Ø V f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit Input ¯eN55
nV/√Hz VDS = 10V, VGS = Ø V f = 1 kHz
Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-54
01/99 B-55
J203, J204
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ203, SMPJ204
At 25°C free air temperature: J203 J204 Process NJ16
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 25 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 20V, VDS = ØV
Gate Operating Current IG– 10 – 10 pA VDG = 20V, ID= IDSS(min)
Gate Source Cutoff Voltage VGS(OFF) – 2 – 10 – 0.3 – 2 V VDS = 20V, ID= 10 nA
Drain Saturation Current (Pulsed) IDSS 4 20 0.2 1.2 3 mA VDS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 1500 500 1500 µS VDS = 20V, VGS = ØV f = 1 kHz
Transconductance
Common Source Output Conductance gos 10 2.5 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 44pFV
DS = 20V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 11pFV
DS = 20V, VGS = Ø V f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit Input ¯eN510
nV/√Hz VDS = 10V, VGS = Ø V f = 1 kHz
Noise Voltage
¥ Audio Amplifiers
¥ General Purpose Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-55
B-56 01/99
J210, J211
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
¥ General Purpose Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ210, SMPJ211
At 25°C free air temperature: J210 J211 Process NJ26L
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV
Gate Operating Current IG– 10 – 10 pA VDS = 20V, ID= 1 mA
Gate Source Cutoff Voltage VGS(OFF) – 1 – 3 – 2.5 – 4.5 V VDS = 15V, ID= 1 nA
Drain Saturation Current (Pulsed) IDSS 215720mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 4000 12000 6000 12000 µS VDS = 15V, VGS = ØV f = 1 kHz
Transconductance
Common Source Output Conductance gos 150 200 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 44pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 11pFV
DS = 15V, VGS = Ø V f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit Input ¯eN10 10 nV/√Hz VDS = 15V, VGS = ØV f = 1 kHz
Noise Voltage
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-56
01/99 B-57
J212
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ212
At 25°C free air temperature: J212 Process NJ26L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 pA VGS = – 15V, VDS = ØV
Gate Operating Current IG– 10 pA VDS = 20V, ID= 1 mA
Gate Source Cutoff Voltage VGS(OFF) – 4 – 6 V VDS = 15V, ID= 1 nA
Drain Saturation Current (Pulsed) IDSS 15 40 mA VDS = 15V, VGS = Ø V
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs 7000 12000 µS VDS = 15V, VGS = Ø V f = 1 kHz
Common Source Output Conductance gos 200 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 4pFV
DS = 15V, VGS = Ø V f = 1 MHz
Common Source Reverse Transfer Crss 1pFV
DS = 15V, VGS = Ø V f = 1 MHz
Capacitance
Equivalent Short Circuit ¯eN10 nV/√Hz VDS = 15V, VGS = Ø V f = 1 kHz
Input Noise Voltage
¥ Audio Amplifier
¥ General Purpose Amplifier
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-57
B-58 01/99
J230, J231
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ230, SMPJ231
At 25°C free air temperature: J230 J231 Process NJ16
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 – 40 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 250 – 250 pA VGS = – 30V, VDS = ØV
Gate Operating Current IG– 2 – 2 pA VDS = 20V, ID= ØV
Gate Source Cutoff Voltage VGS(OFF) – 0.5 – 3 – 1.5 – 5 V VDS = 20V, ID= 1 µA
Drain Saturation Current (Pulsed) IDSS 0.7 3 2 6 mA VDS = 20V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 1000 3500 1500 4000 µS VDS = 20V, VGS = ØV f = 1 kHz
Transconductance
Common Source Output Conductance gos 1.5 3 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 44pFV
DS = 20V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 11pFV
DS = 20V, VGS = Ø V f = 1 MHz
Transfer Capacitance
Equivalent Short Circuit Input ¯eN830 830nV/√Hz VDS = 10V, VGS = Ø V f = 10 Hz
Noise Voltage 22
nV/√Hz VDS = 10V, VGS = Ø V f = 1 kHz
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Databook.fxp 1/13/99 2:09 PM Page B-58
01/99 B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 40 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ232
At 25°C free air temperature: J232 Process NJ16
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 40 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 250 pA VGS = – 30V, VDS = ØV
Gate Operating Current IG– 2 pA VDS = 20V, ID= ØV
Gate Source Cutoff Voltage VGS(OFF) – 3 – 6 V VDS = 20V, ID= 1 µA
Drain Saturation Current (Pulsed) IDSS 510mAV
DS = 20V, VGS = Ø V
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs 2500 5000 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Output Conductance gos 5µSV
DS = 20V, VGS = Ø V f = 1 kHz
Common Source Input Capacitance Ciss 4pFV
DS = 20V, VGS = Ø V f = 1 MHz
Common Source Reverse Transfer Crss 1pF VDS = 20V, VGS = Ø V f = 1 MHz
Capacitance
Equivalent Short Circuit ¯eN20 30 nV/√Hz VDS = 10V, VGS = ØV f = 10 Hz
Input Noise Voltage 6nV/√Hz VDS = 10V, VGS = ØV f = 1 kHz
¥ Audio Amplifier
1000 N. Shiloh Road, Garland, TX 75042
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Databook.fxp 1/13/99 2:09 PM Page B-59
B-60 01/99
J304, J305
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixers
¥ Oscillators
¥ VHF/UHF Amplifiers
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ304, SMPJ305
At 25°C free air temperature: J304 J305 Process NJ26
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 30 – 30 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 20V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) – 2 – 6 – 0.5 – 3 V VDS = 15V, ID= 1 nA
Drain Saturation Current (Pulsed) IDSS 5151 8mAV
DS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward 4500 7500 3000 µS VDS = 15V, VGS = ØV f = 1 kHz
gfs 3000 µS VDS = 15V, VGS = ØV f = 100 MHz
Transconductance 4200 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Output Conductance gos 50 50 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 33pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Reverse Crss 0.85 0.85 pF VDS = 15V, VGS = Ø V f = 1 MHz
Transfer Capacitance
Common Source Output Capacitance Coss 11pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Output Conductance gos 60 60 µS VDS = 15V, VGS = ØV f = 100 MHz
80 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Output Susceptance bos 800 800 µS VDS = 15V, VGS = ØV f = 100 MHz
3600 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Input Conductance gis 80 80 µS VDS = 15V, VGS = ØV f = 100 MHz
800 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Input Susceptance bis 2000 2000 µS VDS = 15V, VGS = ØV f = 100 MHz
7500 µS VDS = 15V, VGS = ØV f = 400 MHz
Common Source Power Gain Gps 20 dB VDS = 15V, ID= 5 mA f = 100 MHz
11 dB VDS = 15V, ID= 5 mA f = 400 MHz
Noise Figure NF 1.7 dB VDS = 15V, ID= 5 mA f = 100 MHz
3.8 dB RG= 1 Ωf = 400 MHz
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Databook.fxp 1/13/99 2:09 PM Page B-60
01/99 B-61
J308, J309
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ308, SMPJ309
At 25°C free air temperature: J308 J309 Process NJ72
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 1 – 1 nA VGS = – 15V, VDS = ØV
– 1 – 1 µA VGS = – 15V, VDS = ØV TA= +125°C
Gate Source Cutoff Voltage VGS(OFF) – 1 – 6.5 – 1 – 4 V VDS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 11VV
DS = ØV, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 12 60 12 30 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs 8000 17000 10000 17000 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Source Output Conductance gos 250 250 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Forward Transconductance gfg 13000 13000 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Output Transconductance gog 150 100 µS VDS = 10V, ID= 10 mA f = 1 kHz
Gate Drain Capacitance Cdg 1.8 2.5 1.8 2.5 pF VDS = ØV, VGS = – 10V f = 1 MHz
Gate Source Capacitance Cgs 45 45pFV
DS = ØV, VGS = – 10V f = 1 MHz
Equivalent Short Circuit ¯eN10 10 nV/√Hz VDS = 10V, ID= 10 mA f = 100 kHz
Input Noise Voltage
Common Source Forward Re(Yfs) 12 12 µS VDS = 10V, ID= 10 mA f = 105 MHz
Transconductance
Common Gate Input Conductance Re(Yig) 14 14 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Source Input Conductance Re(Yis) 0.4 0.4 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Source Output Conductance Re(Gos) 0.15 0.15 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Gate Power Gain Gpg 16 16 dB VDS = 10V, ID= 10 mA f = 105 MHz
at Noise Match 11 11 dB VDS = 10V, ID= 10 mA f = 450 MHz
Noise Figure NF 1.5 1.5 dB VDS = 15V, ID= 10 mA f = 105 MHz
2.7 2.7 dB VDS = 15V, ID= 10 mA f = 450 MHz
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Databook.fxp 1/13/99 2:09 PM Page B-61
B-62 01/99
J310
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixer
¥ Oscillator
¥ VHF/UHF Amplifier
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source Voltage – 25 V
Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ310
At 25°C free air temperature: J310 Process NJ72
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 1 nA VGS = – 15V, VDS = ØV
– 1 µA VGS = – 15V, VDS = ØV TA= + 125°C
Gate Source Cutoff Voltage VGS(OFF) – 2 – 6.5 V VDS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 1VV
DS = ØV, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 24 60 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs 8000 17000 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Source Output Conductance gos 250 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Forward Transconductance gfg 1200 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Output Transconductance gog 150 µS VDS = 10V, ID= 10 mA f = 1 kHz
Gate Drain Capacitance Cdg 1.8 2.5 pF VDS = ØV, VGS = – 10V f = 1 MHz
Gate Source Capacitance Cgs 45pFV
DS = ØV, VGS = – 10V f = 1 MHz
Equivalent Short Circuit ¯eN10 nV/√Hz VDS = 10V, ID= 10 mA f = 100 Hz
Input Noise Voltage
Common Source Forward Transconductance Re (Yfs)12µSV
DS = 10V, ID= 10 mA f = 105 MHz
Common Gate Input Conductance Re (Yig)14µSV
DS = 10V, ID= 10 mA f = 105 MHz
Common Source Input Conductance Re (Yis) 0.4 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Source Output Conductance Re (gos) 0.15 µS VDS = 10V, ID= 10 mA f = 105 MHz
Common Gate Power Gain Gpg 16 dB VDS = 10V, ID= 10 mA f = 105 MHz
at Noise Match 11 dB VDS = 10V, ID= 10 mA f = 450 MHz
Noise Figure NF 1.5 dB VDS = 15V, ID= 10 mA f = 105 MHz
2.7 dB VDS = 15V, ID= 10 mA f = 450 MHz
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Databook.fxp 1/13/99 2:09 PM Page B-62
01/99 B-63
P1086, P1087
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage 30 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate
Surface Mount
SMPP1086, SMPP1087
At 25°C free air temperature: P1086 P1087 Process PJ99
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS 30 30 V IG= 1 µA, VDS = ØV
Gate Reverse Current IGSS 22nAV
GS = 15V, VDS = ØV
Gate Source Cutoff Voltage VGS(OFF) 10 5 V VDS = – 15V, ID= – 1 µA
Saturation Drain Current (Pulsed) IDSS – 10 – 5.0 mA VDS = – 20V, VGS = ØV
Drain Cutoff Current ID(OFF) – 10 – 10 nA VDS = – 15V, VGS = 12V (P1086)
– 0.5 – 0.5 µA VGS = 7V (P1087) TA= 85°C
Drain Reverse Current IDGO 22nAV
DG = – 15V, IS= ØA
0.1 0.1 µA VDG = – 15V, IS= ØA TA= 85°C
Drain Source ON Voltage VDS(ON) – 0.5 – 0.5 V VGS = ØV, ID= – 6 mA (P1086)
– 0.5 – 0.5 V VGS = ØV, ID= – 3 mA (P1087)
Static Drain Source ON Resistance rDS(ON) 75 150 ΩID= – 1 mA, VGS = ØV
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 75 150 ΩID= Ø, VGS = ØV f = 1 kHz
Common Source Input Capacitance C iss 45 45 pF VDS = – 15V, VGS = ØV f = 1 kHz
Common Source Crss 10 10 pF VDS = ØV, VGS = 12V (P1086) f = 1 MHz
Reverse Transfer Capacitance 10 10 pF VDS = ØV, VGS = 7V (P1087)
Switching Characteristics
VDD = – 6V, VGS(ON) = ØV
Turn ON Delay Time td(on) 15 15 ns P1086 P1087
Rise Time tr20 75 ns VGS(OFF) 12 7 V
Turn OFF Delay Time td(off) 15 25 ns VD(ON) – 6 – 3 MA
Fall Time tf50 100 ns RL910 1.8K Ω
¥ Choppers
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Databook.fxp 1/13/99 2:09 PM Page B-63
B-64 01/99
SMP5911, SMP5912
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Wideband Differential
Amplifiers
SOIC-8 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
At 25°C free air temperature: SMP5911 SMP5912 Process NJ30L
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV
– 250 – 250 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Operating Current IG– 100 – 100 pA VDG = 10V, ID= 5 mA
– 100 – 100 nA VDG = 10V, ID= 5 mA TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 1.0 – 5 – 1.0 – 5 V VDS = 15V, ID= 5 nA
Gate Source Voltage VGS – 0.3 – 4 – 0.3 – 4 V VDS = 15V, ID= 5 mA
Drain Saturation Current (Pulsed) IDSS 740740mAV
DS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source gfs 3000 10000 3000 10000 µS VDG = 10V, ID= 5 mA f = 1 kHz
Forward Transconductance 3000 10000 3000 10000 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source gos 100 100 µS VDG = 10V, ID= 5 mA f = 1 kHz
Output Conductance 150 150 µS VDG = 10V, ID= 5 mA f = 100 MHz
Common Source Input Capacitance Ciss 55pFV
DG = 10V, ID= 5 mA f = 1 MHz
Common Source Reverse Transfer Capacitance Crss 1.2 1.2 pF VDG = 10V, ID= 5 mA f = 1 MHz
Equivalent Short Circuit Input Noise Voltage ¯eN20 20 nV/√Hz VDG = 10V, ID= 5 mA f = 10 kHz
Noise Figure NF 1 1 dB VDG = 10V, ID= 5 mA f = 10 kHz
RG= 100 KΩ
Gate Source Differential Voltage VGS1 –V
GS2 10 15 mV VDG = 10V, ID= 5 mA
Gate Differential Current IG1 –IG2 20 20 nA VDG = 10V, ID= 5 mA TA= 125°C
Drain Saturation Current Ratio IDSS1/IDSS2 0.95 1 0.95 1 VDG = 10V, VGS = ØV
Transconductance Ratio gfs1/gfs2 0.95 1 0.95 1 VDG = 10V, ID= 5 mA f = 1 kHz
20 40 µV/°C VDG = 10V, ID= 5 mA TA= 25°C
Gate Source Differential Voltage ∆VGS1 –V
GS2 20 40 µV/°C VDG = 10V, ID= 5 mA TB= 125°C
With Temperature ∆T20 40 µV/°C VDG = 10V, ID= 5 mA TA= 35°C
20 40 µV/°C VDG = 10V, ID= 5 mA TB= 25°C
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Databook.fxp 1/14/99 11:32 AM Page B-64
01/99 B-65
U290, U291
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 100 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: U290 U291 Process NJ1800D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 30 – 30 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 1 – 1 nA VGS = – 15V, VDS = ØA
– 1 – 1 µA VGS = – 15V, VDS = ØA TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 4 – 10 – 1.5 – 4.5 V VDS = 15V, ID= 3 nA
Drain Saturation Current (Pulsed) IDSS 500 200 mA VDS = 10V, VGS = ØV
Drain Cutoff Current ID(OFF) 11nAV
DS = 5V, VGS = – 10V
11µAV
DS = 5V, VGS = – 10V TA= 150°C
Drain Source ON Voltage VDS(ON) 30 70 mV VGS = ØV, ID= 10 mA
Static Drain Source ON Resistance rDS(ON) 1327ΩVGS = ØV, I D= 10 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 1327ΩVGS = ØV, ID= Ø f = 1 kHz
Drain Gate OFF Capacitance Cdgo 30 30 pF VDG = 15V, IS= ØV f = 1 MHz
Source Gate OFF Capacitance Csgo 30 30 pF VDG = 15V, IS= ØV f = 1 MHz
Source Gate Plus Drain Gate Ciss 160 160 pF VDG = ØV, VGS = ØV f = 1 MHz
Switching Characteristics
VDD = 1.5V, ID(ON) = 30 mA
Turn ON Delay Time td(on) 15 15 ns RL= 50Ω
Rise Time tr20 20 ns VGS(ON) = ØV
Turn OFF Delay Time td(off) 15 15 ns (U290) VGS(OFF) = – 12V
Fall Time tf20 20 ns (U291) VGS(OFF) = – 7V
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¥ Low On Resistance Switches
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Databook.fxp 1/13/99 2:09 PM Page B-65
B-66 01/99
U308, U309
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixers
¥ Oscillators
¥ VHF/UHF Amplifiers
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 20 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mw/°C
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMPJ308/J309
At 25°C free air temperature: U308 U309 Process NJ72
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V VGS = – 1µA, VDS = ØV
Gate Reverse Current IGSS – 150 – 150 pA VGS = – 15V, VDS = ØV
– 150 – 150 nA VGS = – 15V, VDS = ØV TA= +125°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 6– 1– 4VV
DS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 11VV
DS = ØV, IG= 10 mA
Drain Saturation Current (Pulsed) IDSS 12 60 12 30 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Gate Forward 10 17 10 17 mS VDS = 10V, ID= 10 mA f = 1 kHz
Gfs 15 15 mS VDS = 10V, ID= 10 mA f = 105 MHz
Transconductance 14 14 mS VDS = 10V, ID= 10 mA f = 450 MHz
250 250 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Output Conductance Gog 0.18 0.18 µS VDS = 10V, ID= 10 mA f = 105 MHz
0.32 0.32 µS VDS = 10V, ID= 10 mA f = 450 MHz
Drain Gate Capacitance Cdg 2.5 2.5 pF VDS = 10V, VGS = – 10V f = 1 MHz
Gate Source Capacitance Cgs 55pFV
DS = 10V, VGS = – 10V f = 1 MHz
Equivalent Short Circuit ¯eN10 10 nV/√Hz VDS = 10V, ID= 10 mA f = 100 kHz
Input Noise Voltage
Common Gate Power Gain G pg 14 16 14 16 dB VDS = 10V, ID= 10 mA f = 105 MHz
10 11 10 11 dB VDS = 10V, ID= 10 mA f = 450 MHz
Noise Figure NF 1.5 2 1.5 2 dB VDS = 10V, ID= 10 mA f = 105 MHz
2.7 3.5 2.7 3.5 dB VDS = 10V, ID= 10 mA f = 450 MHz
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Databook.fxp 1/13/99 2:09 PM Page B-66
01/99 B-67
U310
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 20 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
TOÐ52 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMPJ310
At 25°C free air temperature: U310 Process NJ72L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 150 pA VGS = – 15V, VDS = ØV
– 150 nA VGS = – 15V, VDS = ØV TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 2.5 – 6 V VDS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 1VV
DS = ØV, IG= 10 mA
Drain Saturation Current (Pulsed) IDSS 24 60 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
10 17 mS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Forward Transconductance gfg 15 mS VDS = 10V, ID= 10 mA f = 105 MHz
14 mS VDS = 10V, ID= 10 mA f = 450 MHz
250 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Output Conductance gog 0.18 µS VDS = 10V, ID= 10 mA f = 105 MHz
0.32 µS VDS = 10V, ID= 10 mA f = 450 MHz
Drain Gate Capacitance Cdg 2.5 pF VDS = 10V, VGS = – 10V f = 1 MHz
Gate Source Capacitance Cgs 5pFV
DS = 10V, VGS = – 10V f = 1 MHz
Equivalent Short Circuit ¯eN10 nV/√Hz VDS = 10V, ID= 10 mA f = 100 Hz
Input Noise Voltage
Common Gate Power Gain Gpg 14 16 dB VDS = 10V, ID= 10 mA f = 105 MHz
10 11 dB VDS = 10V, ID= 10 mA f = 450 MHz
Noise Figure NF 1.5 2 dB VDS = 10V, ID= 10 mA f = 105 MHz
2.7 3.5 dB VDS = 10V, ID= 10 mA f = 450 MHz
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¥ Oscillator
¥ VHF/UHF Amplifier
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Databook.fxp 1/14/99 11:33 AM Page B-67
B-68 01/99
U311
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixer
¥ Oscillator
¥ VHF/UHF Amplifier
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: U311 Process NJ72L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 150 pA VGS = – 15V, VDS = ØV
– 150 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 1 – 6 V VDS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 1VV
DS = ØV, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 20 60 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Gate Forward Transconductance gfg 1000 17000 µS VDS = 10V, ID= 10 mA f = 1 kHz
Common Gate Output Conductance gog 250 µS VDS = 10V, ID= 10 mA f = 1 kHz
Gate Drain Capacitance Cdg 2.5 pF VDS = 10V, ID= 10 mA f = 1 MHz
Gate Source Capacitance Cgs 5pFV
DS = 10V, ID= 10 mA f = 1 MHz
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Databook.fxp 1/13/99 2:09 PM Page B-68
01/99 B-69
U350
Hybrid Quad Silicon Junction Field-Effect Transistor Array
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Gate Current 25 mA
Continuous Device Power Dissipation 400 mW
Power Derating 3.2 mW/°C
TOÐ78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Gate 1 & 3, 2 Drain 1 & 4,
3 Source 1 & 2, 4 Ground & Case,
5 Source 3 & 4, 6 Drain 2 & 3,
7 Gate 2 & 4, 8 Omitted
At 25°C free air temperature: U350 Four Matched Process NJ72L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 1 nA VGS = – 15V, VDS = ØV
– 1 µA VGS = – 15V, VDS = ØV TA= 125°C
Gate Source Cutoff Voltage VGS(OFF) – 2 – 6 V VDS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 1VV
DS = ØV, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 24 60 mA VDS = 15V, VGS = ØV
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 50 90 ΩVGS = ØV, ID= mA f = 1 kHz
Common Source gfs 10 18 mS VDS = 10V, ID= 10 mA f = 1 kHz
Forward Transconductance
Common Source Output Conductance gos 150 µS VDS = 10V, ID= 10 mA f = 1 kHz
Drain Gate Capacitance Cdgo 2.5 pF VGD = – 10V, IS= ØV f = 1 MHz
Gate Source Capacitance Csgo 5pFV
GS = – 10V, ID= ØV f = 1 MHz
(Conversion Gain) Gc4dB
VDS = 20V, VGS = 1/2 VGS(OFF) f = 100 MHz
RD= 1,700 Ω
Noise Figure NF 7 dB VDS = 20V, VGS = 1/2 VGS(OFF) f = 100 MHz
RD= 1,700 Ω
Saturation Drain Current Ratio IDSS / IDSS 0.9 1 VDS = 15V, VDS = ØV
Gate Source Cutoff Voltage Ratio VGS(OFF) / VGS(OFF) 0.9 1 VDS = 15V, ID= 1 nA
Common Source gfs / gfs 0.9 1 VDS = 15V, ID= 10 mA f = 1 kHz
Forward Transconductance
Differential Output Conductance Yos / Yos 0.9 1 VDS = 15V, ID= 10 mA f = 1 kHz
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Databook.fxp 1/13/99 2:09 PM Page B-69
B-70 01/99
U430, U431
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Balanced Mixers
¥ Differential Amplifiers
Absolute maximum ratings at TA= 25¡C.
Total Device Dissipation (Derate 4 mW/°C to150°C) 500 mW
Storage Temperature Range – 65°C to +150°C
Lead Temperature 300°C
TOÐ78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source 1, 2 Gate 1, Drain 1,
4 Case, 5 Drain 2, 6 Gate 2,
7 Source 2, 8 Omitted
At 25°C free air temperature: U430 U431 Process NJ72
Static Electrical Characteristics Min Typ Max Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 150 – 150 pA VGS = – 15V, VDS = ØV
– 150 – 150 nA VGS = – 15V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 4– 2– 6VV
DS = 10V, ID= 1 nA
Gate Source Forward Voltage VGS(F) 11VV
DS = ØV, IG= 10 mA
Drain Saturation Current (Pulsed) IDSS 12 30 24 60 mA VDS = 10V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward Gfs 10 17 10 17 mS VDS = 10V, ID= 10 mA f = 1 kHz
Transconductance 12 12 mS VDS = 10V, ID= 10 mA f = 100 MHz
Common Source Output Conductance Gos 250 250 µS VDS = 10V, I D= 10 mA f = 1 kHz
0.15 0.15 µS VDS = 10V, ID= 10 mA f = 100 MHz
Drain Gate Capacitance Cdg 55pFV
DS = ØV, VGS = – 10V f = 1 MHz
Source Gate Capacitance Cgs 2.5 2.5 pF VDS = ØV, VGS = – 10V f = 1 MHz
Equivalent Short Circuit ¯eN10 10 nV/√Hz VDS = 10V, ID= 10 mA f = 100 kHz
Input Noise Voltage
Power Match Source Admittance gig 12 12 VDS = 10V, ID= 10 mA f = 100 MHz
Conversion Gain Gc33dB
VDS = 20V, RL= 2 kΩf = 100 MHz
VGS = 1/2 VGS(OFF)
Saturation Drain Current Ratio IDSS1/IDSS2 0.9 1 0.9 1 VDS = 10V, VG= ØV
Gate Source Cutoff Voltage Ratio VGS(OFF)1 0.9 1 0.9 1 VDS = 10V, ID= 1 nA
VGS(OFF)2
Transconductance Ratio gfs1/gfs2 0.9 1 0.9 1 VDS = 10V, ID= 10 mA
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Databook.fxp 1/13/99 2:09 PM Page B-70
