FSS172 Ordering number : EN8286A SANYO Semiconductors DATA SHEET FSS172 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS 20 V ID --4.5 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD V PW10s, duty cycle1% --18 A Mounted on a ceramic board (1200mm20.8mm) 1.4 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V --1 A 10 A --2.6 V Forward Transfer Admittance VGS(off) yfs VGS= 16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--4.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--4.5A, VGS=--10V ID=--4A, VGS=--4.5V 82 115 m RDS(on)3 ID=--4A, VGS=--4V 95 135 m Cutoff Voltage Marking : S172 --1.2 3.9 6.6 48 S 63 m Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 50907 TI IM TC-00000685 / 70505PE MS IM TB-00001350 No.8286-1/4 FSS172 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 590 Output Capacitance 120 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 115 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 80 ns See specified Test Circuit. 55 ns tf Qg See specified Test Circuit. 62 ns VDS=--10V, VGS=--10V, ID=--4.5A 12.8 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--10V, ID=--4.5A VDS=--10V, VGS=--10V, ID=--4.5A 1.5 Gate-to-Drain "Miller" Charge Diode Forward Voltage VSD IS=--4.5A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge 4.3 Package Dimensions unit : mm (typ) 7005-002 VDD= --15V 0.3 6.0 4.4 D 0.2 1.5 1.8 MAX VOUT PW=10s D.C.1% 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain G FSS172 P.G 50 S 0.1 5.0 ID= --4.5A RL=3.33 VIN 4 0.43 1.27 0.595 V 0V --10V 5 1 --1.5 Switching Time Test Circuit VIN 8 nC --0.87 SANYO : SOP8 ID -- VDS --1.5 --2.0 Ta=7 5C --25 C --2.0 --2.5 --1.5 --1.0 --1.0 --0.5 --0.5 C VGS= --2.5V --3.0 25 --2.5 --4.0 Drain Current, ID -- A --3.0 --3 VDS= --10V --3.5 --10.0 Drain Current, ID -- A --3.5 ID -- VGS --4.5 .0V --5.0 V --4.0 --4. 5 --4. V 0V V -8.0V --6 .0V --4.5 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT09620 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V --3.0 --3.5 IT09621 No.8286-2/4 FSS172 RDS(on) -- VGS 200 RDS(on) -- Ta 180 Static Drain-to-Source On-State Resistance, RDS(on) -- m ID= --4A --4.5A 140 120 100 80 60 40 20 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 40 20 3 C -25 = Ta C 75 1.0 0 20 40 60 80 100 120 140 160 IT09623 VGS=0V 5 C 25 2 --20 IS -- VSD 7 5 --40 Ambient Temperature, Ta -- C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 60 --10 7 5 3 2 3 2 --1.0 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --0.1 --0.4 5 7 --10 IT09624 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 --1.1 IT09625 Ciss, Coss, Crss -- VDS 2 f=1MHz VDD= --15V VGS= --10V 1000 3 td(off) 100 7 5 tf 3 2 td(on) 10 7 5 7 Ciss, Coss, Crss -- pF 2 tr Ciss 5 3 2 Coss Crss 100 7 3 5 2 3 1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 0 5 7 --10 IT09626 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 --10 9 10 Total Gate Charge, Qg -- nC 11 12 13 IT09628 --15 --20 --25 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --30 IT09627 ASO 5 VDS= --10V ID= --4.5A --9 --5 Drain-to-Source Voltage, VDS -- V VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V 80 IT09622 VDS= --10V 7 0.1 --0.01 Switching Time, SW Time -- ns --16 yfs -- ID 10 100 --25 C --2 .0V = --4 S VG A, --4.0 V I D= --4.5 S= VG , A --4.0 V I D= = --10.0 A, V GS .5 4 -I D= 120 0 --60 0 0 140 25C 160 160 Ta= 75 C Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 180 IDP= --18A ID= --4.5A Operation in this area is limited by RDS(on). PW10s 10 0 1m s s 10 ms 10 0 ms DC op era tio n Ta=25C Single pulse Mounted on a ceramic board (1200mm20.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09629 No.8286-3/4 FSS172 PD -- Ta Allowable Power Dissipation, PD -- W 1.5 1.4 M ou nt 1.3 1.2 ed on ac er am ic 1.0 bo ar 0.8 d (1 20 0m 0.6 m2 0.4 0. 0.2 8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT09630 Note on usage : Since the FSS172 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No.8286-4/4