A2T26H160--24SR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications covering the frequency range of 2496 to
2690 MHz.
2600 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
VDD =28Vdc,I
DQA = 350 mA, VGSB =0.6Vdc,P
out =28WAvg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz 15.7 48.2 7.9 –31.5
2590 MHz 16.3 47.9 7.9 –34.0
2690 MHz 16.4 48.1 7.5 –34.0
Features
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.
Document Number: A2T26H160--24S
Rev. 0, 8/2014
Freescale Semiconductor
Technical Data
2496–2690 MHz, 28 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
A2T26H160--24SR3
Figure 1. Pin Connections
(Top View)
RFoutA/VDSA
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(1)
VBWB(1)
6
3
15
24
Carrier
Peaking
NI--780S--4L2L
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 76C, 28 W W--CDMA, 28 Vdc, IDQA = 350 mA, VGSB = 0.6 Vdc, 2590 MHz
RJC 0.56 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =32Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics – Side A (4) (Carrier)
Gate Threshold Voltage
(VDS =10Vdc,I
D=60Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 350 mAdc, Measured in Functional Test)
VGS(Q) 1.4 1.8 2.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=0.6Adc)
VDS(on) 0.1 0.15 0.3 Vdc
On Characteristics – Side B (4) (Peaking)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 100 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.0Adc)
VDS(on) 0.1 0.15 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes – AN1955.
4. Each side of device measured separately.
(continued)
A2T26H160--24SR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 350 mA, VGSB =0.4Vdc,
Pout = 28 W Avg., f = 2575 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 14.5 15.5 17.5 dB
Drain Efficiency D43.0 47.0 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.0 7.7 —dB
Adjacent Channel Power Ratio ACPR —–31.0 –28.5 dBc
Load Mismatch (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) IDQA = 350 mA, VGSB = 0.6 Vdc, f = 2590 MHz
VSWR 10:1 at 32 Vdc, 178 W Pulse Output Power
(3 dB Input Overdrive from 138 W Pulse Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 350 mA, VGSB =0.6Vdc,
2496–2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —138 — W
Pout @ 3 dB Compression Point (3) P3dB —178 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496–2690 MHz frequency range)
—–18 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —140 —MHz
Gain Flatness in 194 MHz Bandwidth @ Pout =28WAvg. GF—0.7 —dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.009 —dB/C
Output Power Variation over Temperature
(–30Cto+85C)
P1dB —0.009 —dB/C
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
Figure 2. A2T26H160--24SR3 Production Test Circuit Component Layout
--
--
CUT OUT AREA
A2T26H160--24S
Rev. 9
C
P
VGGA
VDDA
VGGB
VDDB
C14
R4
C1
C11
R1
C17 C13
C5
C19
C20
R3
C3
C4
Z1
D60817
R2
C7
C8
C9
C6
C12 C18
C21
R5
C15
C10
C2
C16
Table 5. A2T26H160--24SR3 Production Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C6, C8 9.1 pF Chip Capacitors ATC600F9R1BT250XT ATC
C7 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC
C9 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC
C10, C11, C12, C13 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK
C14, C15, C16, C17, C18,
C19
10 F Chip Capacitors C5750X7S2A106K230KE TDK
C20, C21 220 F, 63 V Electrolytic Capacitors SK063M0220B5S--1012 Yageo
R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay
R3 50 , 4 W Chip Resistor CW12010T0050GBK ATC
R4, R5 1K, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay
Z1 2300–2700 MHz Band, 90, 2 dB Hybrid Coupler X3C25P1--02S Anaren
PCB Rogers RO4350B, 0.020,r=3.66 D60817 MTL
A2T26H160--24SR3
5
RF Device Data
Freescale Semiconductor, Inc.
Figure 3. A2T26H160--24SR3 Characterization Test Circuit Component Layout — 2496–2690 MHz
--
--
CUT OUT AREA
A2T26H160--24S
Rev. 7
C
P
VGGA
VDDA
VGGB
VDDB
D57842
C16
R4
C1
C12
R1
C19 C15
C5
C21
C22
C3
C4
R2
C7
C8 C11
C6
C14 C20
C23
R5
C17
C13
C2
C18
C10
C9
Z1
R3
Table 6. A2T26H160--24SR3 Characterization Test Circuit Component Designations and Values — 2496–2690 MHz
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5, C6, C7,
C8
9.1 pF Chip Capacitors ATC600F9R1BT250XT ATC
C9, C10, C11 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC
C12, C13, C14, C15 2.2 F Chip Capacitors C3225X7R2A225K230AB TDK
C16, C17, C18, C19, C20,
C21
10 F Chip Capacitors C5750X7S2A106K230KB TDK
C22, C23 220 F, 63 V Electrolytic Capacitors SK063M0220B5S--1012 Yageo
R1, R2 2.2 , 1/4 W Chip Resistors CRCW12062R20JNEA Vishay
R3 50 , 4 W Chip Resistor CW12010T0050GBK ATC
R4, R5 1K, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay
Z1 2300–2700 MHz Band, 90, 2 dB Hybrid Coupler X3C25P1--02S Anaren
PCB Rogers RO4350B, 0.020,r=3.66 D57842 MTL
6
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
TYPICAL CHARACTERISTICS
PARC (dB)
–2.6
–1.8
–2
–2.2
–2.4
–2.8
2480
ACPR
f, FREQUENCY (MHz)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 28 Watts Avg.
15.4
17.4
17.2
17
–35
50
49
48
47
–30
–31
–32
–33
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
16.8
16.6
16.4
16.2
16
15.8
15.6
2510 2540 2570 2600 2630 2660 2690 2720
46
–34
ACPR (dBc)
PARC
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO–TONE SPACING (MHz)
10
–75
–15
–25
–35
–55
1 200
IMD, INTERMODULATION DISTORTION (dBc)
–45
Figure 6. Output Peak–to–Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
–1
–3
20
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
12 28 36 6044
ACPR (dBc)
–38
–26
–28
–30
–34
–32
–36
16.6
Gps, POWER GAIN (dB)
16.4
16.2
16
15.8
15.6
15.4 –5
Gps
1
VDD =28Vdc,P
out =28W(Avg.),I
DQA = 350 mA, VGSB =0.6Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
–65 IM5–U
IM5–L
IM7–L
IM7–U
IM3–L
IM3–U
VDD =28Vdc,P
out = 13 W (PEP), IDQA = 350 mA
VGSB = 0.6 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2590 MHz
100
52
30
60
55
50
45
40
35
DDRAIN EFFICIENCY (%)
D
ACPR PARC
Gps
–3 dB = 37 W
–1 dB = 19.4 W
–2 dB = 27.5 W
VDD =28Vdc,I
DQA = 350 mA, VGSB = 0.6 Vdc, f = 2590 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
A2T26H160--24SR3
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W–CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
8
20
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
18
16
10 100 200
10
–60
ACPR (dBc)
14
12
10
0
–30
–40
–50
Figure 8. Broadband Frequency Response
12
18
f, FREQUENCY (MHz)
16
15
14
GAIN (dB)
17
13
2300 2400 2500 2600 2700 2800 2900
Gain
VDD =28Vdc
Pin =0dBm
IDQA = 350 mA
VGSB =0.6Vdc
2496 MHz
2590 MHz
2690 MHz
2690 MHz
2590 MHz
2496 MHz
2496 MHz
2590 MHz 2690 MHz
VDD =28Vdc,I
DQA = 350 mA
VGSB = 0.6 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
8
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 344 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.14 – j16.1 7.84 + j15.2 10.6 – j14.6 18.0 48.1 64 53.7 –14
2590 9.88 – j13.4 8.97 + j12.9 10.1 – j13.1 18.4 48.1 65 54.9 –15
2690 9.36 – j9.75 8.30 + j9.00 10.7 – j15.6 18.3 48.0 63 53.8 –14
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.14 – j16.1 8.53 + j15.6 10.2 – j15.9 15.7 48.8 76 54.6 –18
2590 9.88 – j13.4 9.89 + j12.6 10.0 – j14.9 16.0 48.9 77 54.9 –19
2690 9.36 – j9.75 8.59 + j8.15 10.9 – j17.3 15.9 48.8 75 54.1 –19
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQA = 344 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.14 – j16.1 8.14 + j15.1 20.2 – j6.73 20.6 46.4 43 62.4 –19
2590 9.88 – j13.4 8.83 + j12.5 14.8 – j4.10 21.0 46.4 44 63.0 –21
2690 9.36 – j9.75 7.73 + j9.07 13.4 – j5.25 21.0 46.1 41 62.0 –20
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.14 – j16.1 8.74 + j15.5 17.5 – j8.53 18.2 47.6 57 63.5 –26
2590 9.88 – j13.4 9.78 + j12.1 13.5 – j4.23 19.0 47.1 52 64.0 –30
2690 9.36 – j9.75 7.74 + j8.16 12.7 – j5.49 19.0 46.9 49 63.1 –30
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
A2T26H160--24SR3
9
RF Device Data
Freescale Semiconductor, Inc.
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =0.6Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.60 – j18.3 7.68 + j19.7 9.04 – j14.6 13.1 50.5 113 54.8 –24
2590 10.1 – j16.7 10.5 + j17.9 8.89 – j14.2 13.4 50.5 111 54.6 –27
2690 11.6 – j11.2 12.8 + j11.3 9.69 – j16.8 13.4 50.4 110 54.0 –29
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.60 – j18.3 8.64 + j20.2 9.31 – j15.9 10.9 51.2 131 55.3 –30
2590 10.1 – j16.7 12.1 + j17.5 9.45 – j15.3 11.3 51.1 129 54.9 –33
2690 11.6 – j11.2 13.1 + j9.46 10.7 – j17.9 11.2 51.0 127 54.4 –35
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,V
GSB =0.6Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.60 – j18.3 6.75 + j20.0 15.2 – j5.96 14.3 49.0 79 66.1 –31
2590 10.1 – j16.7 9.24 + j18.8 10.7 – j4.18 14.6 48.6 72 66.6 –35
2690 11.6 – j11.2 12.7 + j13.2 9.18 – j7.22 14.6 48.6 72 65.9 –37
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2496 7.60 – j18.3 7.82 + j20.5 15.3 – j7.51 12.2 49.7 94 66.3 –39
2590 10.1 – j16.7 11.2 + j18.4 11.4 – j6.56 12.6 49.7 93 66.7 –43
2690 11.6 – j11.2 13.4 + j10.8 9.86 – j8.35 12.6 49.5 88 65.8 –45
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
10
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
P1dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
–25
0
–10
IMAGINARY ()
15 20530
–5
–15
–20
25
10
–25
0
–10
IMAGINARY ()
15 20530
–5
–15
–20
25
10
–25
0
–10
15 20530
–5
–15
–20
25
10
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 9. P1dB Load Pull Output Power Contours (dBm)
REAL ()
–25
0
–10
IMAGINARY ()
15 20530
–5
–15
–20
25
10
Figure 10. P1dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
Figure 11. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 12. P1dB Load Pull AM/PM Contours ()
REAL ()
46.5
46
P
E
47
47.5
45
45.5
48
46.5
46
60
58
56
54
52
50
48
46
62
P
E
60
19.5
20
19
18.5
18
P
E
20.5
21 21.5
21.5
–18
–16
–14
–12
P
E
–10
–20
–22
–24
–26
A2T26H160--24SR3
11
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
–25
0
–10
IMAGINARY ()
15 20530
–5
–15
–20
25
10
–25
0
–10
IMAGINARY ()
15 20530
–5
–15
–20
25
10
–25
0
–10
15 20530
–5
–15
–20
25
10
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 13. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–25
0
–10
IMAGINARY ()
15 20530
–5
–15
–20
25
10
Figure 14. P3dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
Figure 15. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 16. P3dB Load Pull AM/PM Contours ()
REAL ()
46.5
47
P
E
48.5
50
46
47.5
48
47 47.5
60
58
56
54
52
50
48
62
P
E
62
19.5
19
18.5
18
17.5
17
16
P
E
15.5
16.5
–26
–28
–22
–20
–18
–16
P
E
19.5 –26
–30
–32
–24
12
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
P1dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
–25
0
–10
IMAGINARY ()
–5
–15
–20
–25
0
–10
IMAGINARY ()
–5
–15
–20
–25
0
–10
–5
–15
–20
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 17. P1dB Load Pull Output Power Contours (dBm)
REAL ()
–25
0
–10
IMA
G
INARY
(
)
15 205
–5
–15
–20
25
10
Figure 18. P1dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
Figure 19. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 20. P1dB Load Pull AM/PM Contours ()
REAL ()
015 20525
10
0
15 20525
10
015 20525
10
0
47 48
48.5
49
49.5
50
46.5 47.5
P
E
60
52
50
62
P
E
54
56
58
64
66
P
E
10.5
11 11.5 12
12.5
13
13.5
14
14.5
P
E
–26
–24
–28
–30
–32
–34
–36
–38
A2T26H160--24SR3
13
RF Device Data
Freescale Semiconductor, Inc.
P3dB – TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
–25
0
–10
IMAGINARY ()
–5
–15
–20
–25
0
–10
IMAGINARY ()
–5
–15
–20
–25
0
–10
–5
–15
–20
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 21. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–25
0
–10
IMAGINARY ()
15 205
–5
–15
–20
25
10
Figure 22. P3dB Load Pull Efficiency Contours (%)
REAL ()
IMAGINARY ()
Figure 23. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 24. P3dB Load Pull AM/PM Contours ()
REAL ()
015 20525
10
0
15 20525
10
015 20525
10
0
47.5
47
P
E
48
48.5
49
49.5
50 50.5
51
48.5
49
49.5
50
60 58
56
54
52
50
62
P
E6466
9
8.5
P
E
9.5
10 10.5
11
11.5
12
12.5
–36
–34
–32
–30
–38
P
E
–40
–42
–44
–46
14
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
PACKAGE DIMENSIONS
A2T26H160--24SR3
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
A2T26H160--24SR3
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Aug. 2014 Initial Release of Data Sheet
A2T26H160--24SR3
17
RF Device Data
Freescale Semiconductor, Inc.
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Document Number: A2T26H160--24S
Rev. 0, 8/2014
