ATF-54143-TR2G - Avago Technologies

ATF-54143

Low Noise Enhancement Mode Pseudomorphic HEMT

in a Surface Mount Plastic Package

Data Sheet

Description

Avago Technologies’ ATF-54143 is a high dynamic range,

low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343)

surface mount plastic package.

The combination of high gain, high linearity and low

noise makes the ATF-54143 ideal for cellular/PCS base

stations, MMDS, and other systems in the 450 MHz to 6

GHz frequency range.

Features

 High linearity performance

 Enhancement Mode Technology

[1]

 Low noise  gure

 Excellent uniformity in product speci cations

 800 micron gate width

 Low cost surface mount small plastic package SOT-

343 (4 lead SC-70)

 Tape-and-Reel packaging option available

 Lead-free option available.

Speci cations

 2 GHz; 3V, 60 mA (Typ.)

 36.2 dBm output 3rd order intercept

 20.4 dBm output power at 1 dB gain compression

 0.5 dB noise  gure

 16.6 dB associated gain

Applications

 Low noise ampli er for cellular/PCS base stations

 LNA for WLAN, WLL/RLL and MMDS applications

 General purpose discrete E -PHEMT for other ultra low

noise applications

Note:

1. Enhancement mode technology requires positive Vgs, thereby

eliminating the need for the negative gate voltage associated with

conventional depletion mode devices.

Surface Mount Package SOT-343

Pin Connections and Package Marking

SOURCE

DRAIN

GATE

SOURCE

4Fx

Note:

Top View. Package marking provides orientation and identi cation

“4F” = Device Code

“x” = Date code character

identi es month of manufacture.

Attention: Observe precautions for

handling electrostatic sensitive devices.

ESD Machine Model (Class A)

ESD Human Body Model (Class 1A)

Refer to Avago Application Note A004R:

Electrostatic Discharge Damage and Control.

ATF-54143 Absolute Maximum Ratings [1]

Absolute

Symbol Parameter Units Maximum

V DS Drain - Source Voltage[2] V 5

V GS Gate - Source Voltage[2] V -5 to 1

V GD Gate Drain Voltage[2] V -5 to 1

IDS Drain Current[2] mA 120

Pdiss Total Power Dissipation[3] mW 725

Pin max. (ON mode) RF Input Power (Vds=3V, Ids=60mA) dBm 20 [5]

Pin max. (OFF mode) RF Input Power (Vd=0, Ids=0A) dBm 20

IGS Gate Source Current mA 2[5]

TCH Channel Temperature °C 150

TSTG Storage Temperature °C -65 to 150

θjc Thermal Resistance[4] °C/W 162

Notes:

1. Operation of this device in excess of any one of these parameters

may cause permanent damage.

2. Assumes DC quiescent conditions.

3. Source lead temperature is 25°C. Derate 6.2 mW/°C for TL > 33°C.

4. Thermal resistance measured using 150°C Liquid Crystal Measure-

ment method.

5. The device can handle +20 dBm RF Input Power provided IGS is

limited to 2 mA. IGS at P1dB drive level is bias circuit dependent.

See application section for additional information.

Product Consistency Distribution Charts [6, 7]

(V)

Figure 1. Typical I-V Curves.

= 0.1 V per step)

(mA)

0.4V

0.5V

0.6V

0.7V

0.3V

02146537

120

100

OIP3 (dBm)

Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.

LSL = 33.0, Nominal = 36.575

30 3432 38 4036 42

160

120

Cpk = 0.77

Stdev = 1.41

-3 Std

GAIN (dB)

Figure 3. Gain @ 2 GHz, 3 V, 60 mA.

USL = 18.5, LSL = 15, Nominal = 16.6

14 1615 1817 19

200

160

120

Cpk = 1.35

Stdev = 0.4

-3 Std +3 Std

NF (dB)

Figure 4. NF @ 2 GHz, 3 V, 60 mA.

USL = 0.9, Nominal = 0.49

0.25 0.650.45 0.85 1.05

160

120

Cpk = 1.67

Stdev = 0.073

+3 Std

Notes:

6. Distribution data sample size is 450 samples taken from 9 di erent wafers. Future wafers allocated to this product may have nominal values

anywhere between the upper and lower limits.

7. Measurements made on production test board. This circuit represents a trade-o between an optimal noise match and a realizeable match

based on production test equipment. Circuit losses have been de-embedded from actual measurements.

ATF-54143 Electrical Speci cations

TA = 25°C, RF parameters measured in a test circuit for a typical device

Symbol Parameter and Test Condition Units Min. Typ.[2] Max.

Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V 0.4 0.59 0.75

Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52

Idss Saturated Drain Current Vds = 3V, Vgs = 0V μA — 1 5

Gm Transconductance Vds = 3V, gm = ΔIdss/ΔVgs; mmho 230 410 560

ΔVgs = 0.75-0.7 = 0.05V

Igss Gate Leakage Current Vgd = Vgs = -3V μA — — 200

NF Noise Figure[1] f = 2 GHz Vds = 3V, Ids = 60 mA dB — 0.5 0.9

f = 900 MHz Vds = 3V, Ids = 60 mA dB — 0.3 —

Ga Associated Gain[1] f = 2 GHz Vds = 3V, Ids = 60 mA dB 15 16.6 18.5

f = 900 MHz Vds = 3V, Ids = 60 mA dB — 23.4 —

OIP3 Output 3rd Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm 33 36.2 —

Intercept Point[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 35.5 —

P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm — 20.4 —

Output Power[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 18.4 —

Notes:

1. Measurements obtained using production test board described in Figure 5.

2. Typical values measured from a sample size of 450 parts from 9 wafers.

Input

50 Ohm

Transmission

Line Including

Gate Bias T

(0.3 dB loss)

Input

Matching Circuit

Γ_mag = 0.30

Γ_ang = 150°

(0.3 dB loss)

Output

Matching Circuit

Γ_mag = 0.035

Γ_ang = -71°

(0.4 dB loss)

DUT

50 Ohm

Transmission

Line Including

Drain Bias T

(0.3 dB loss)

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a

trade-o between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measure-

ments.

ATF-54143 Typical Performance Curves

Figure 8. Gain vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 2 GHz.

Figure 10. OIP3 vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 2 GHz.

Figure 12. P1dB vs. Idq and Vds Tuned for

Max OIP3 and Fmin at 2 GHz.

Figure 9. Gain vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 900 MHz.

Ids (mA)

GAIN (dB)

0 1004020 8060

Ids (mA)

OIP3 (dBm)

0 1004020 8060

Idq (mA)[1]

P1dB (dBm)

0 1004020 8060

Ids (mA)

GAIN (dB)

0 1004020 8060

Figure 11. OIP3 vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 900 MHz.

Ids (mA)

OIP3 (dBm)

0 1004020 8060

Figure 13. P1dB vs. Idq and Vds Tuned for

Max OIP3 and Fmin at 900 MHz.

Figure 14. Gain vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

Idq (mA)[1]

P1dB (dBm)

0 1004020 8060

25 C

-40 C

85 C

FREQUENCY (GHz)

GAIN (dB)

0621453

Figure 7. Fmin vs. Ids and Vds Tuned for

Max OIP3 and Min NF at 900 MHz.

Ids (mA)

Fmin (dB)

0 1004020 8060

0.6

0.5

0.4

0.3

0.2

0.1

Figure 6. Fmin vs. Ids and Vds Tuned for

Max OIP3 and Fmin at 2 GHz.

Ids (mA)

Fmin (dB)

0 1004020 8060

0.7

0.6

0.5

0.4

0.3

0.2

Notes:

1. Idq represents the quiescent drain current without RF drive applied. Under low values of Ids, the application of RF drive will cause Id to increase

substantially as P1dB is approached.

2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based

on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true

Fmin is calculated. Refer to the noise parameter application section for more information.

ATF-54143 Typical Performance Curves, continued

ATF-54143 Re ection Coe cient Parameters tuned for Maximum Output IP3, VDS = 3V, IDS = 60 mA

Freq

Out_Mag.[1]

Out_Ang.[2] OIP3 P1dB

(GHz) (Mag) (Degrees) (dBm) (dBm)

0.9 0.017 115 35.54 18.4

2.0 0.026 -85 36.23 20.38

3.9 0.013 173 37.54 20.28

5.8 0.025 102 35.75 18.09

Note:

1. Gamma out is the re ection coe cient of the matching circuit presented to the output of the device.

2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based

on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true

Fmin is calculated. Refer to the noise parameter application section for more information.

Figure 17. P1dB vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

25 C

-40 C

85 C

FREQUENCY (GHz)

P1dB (dBm)

0621453

20.5

19.5

18.5

17.5

Figure 18. Fmin[1] vs. Frequency and Ids

at 3V.

FREQUENCY (GHz)

Fmin (dB)

02145637

60 mA

40 mA

80 mA

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 15. Fmin[2] vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

25 C

-40 C

85 C

FREQUENCY (GHz)

Fmin (dB)

0621453

1.5

1.0

0.5

Figure 16. OIP3 vs. Frequency and Temp

Tuned for Max OIP3 and Fmin at 3V, 60 mA.

25 C

-40 C

85 C

FREQUENCY (GHz)

OIP3 (dBm)

0621453

ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.99 -17.6 27.99 25.09 168.5 0.009 80.2 0.59 -12.8 34.45

0.5 0.83 -76.9 25.47 18.77 130.1 0.036 52.4 0.44 -54.6 27.17

0.9 0.72 -114 22.52 13.37 108 0.047 40.4 0.33 -78.7 24.54

1.0 0.70 -120.6 21.86 12.39 103.9 0.049 38.7 0.31 -83.2 24.03

1.5 0.65 -146.5 19.09 9.01 87.4 0.057 33.3 0.24 -99.5 21.99

1.9 0.63 -162.1 17.38 7.40 76.6 0.063 30.4 0.20 -108.6 20.70

2.0 0.62 -165.6 17.00 7.08 74.2 0.065 29.8 0.19 -110.9 20.37

2.5 0.61 178.5 15.33 5.84 62.6 0.072 26.6 0.15 -122.6 19.09

3.0 0.61 164.2 13.91 4.96 51.5 0.080 22.9 0.12 -137.5 17.92

4.0 0.63 138.4 11.59 3.80 31 0.094 14 0.10 176.5 15.33

5.0 0.66 116.5 9.65 3.04 11.6 0.106 4.2 0.14 138.4 12.99

6.0 0.69 97.9 8.01 2.51 -6.7 0.118 -6.1 0.17 117.6 11.50

7.0 0.71 80.8 6.64 2.15 -24.5 0.128 -17.6 0.20 98.6 10.24

8.0 0.72 62.6 5.38 1.86 -42.5 0.134 -29.3 0.22 73.4 8.83

9.0 0.76 45.2 4.20 1.62 -60.8 0.145 -40.6 0.27 52.8 8.17

10.0 0.83 28.2 2.84 1.39 -79.8 0.150 -56.1 0.37 38.3 8.57

11.0 0.85 13.9 1.42 1.18 -96.9 0.149 -69.3 0.45 25.8 7.47

12.0 0.88 -0.5 0.23 1.03 -112.4 0.150 -81.6 0.51 12.7 7.50

13.0 0.89 -15.1 -0.86 0.91 -129.7 0.149 -95.7 0.54 -4.1 6.60

14.0 0.87 -31.6 -2.18 0.78 -148 0.143 -110.3 0.61 -20.1 4.57

15.0 0.88 -46.1 -3.85 0.64 -164.8 0.132 -124 0.65 -34.9 3.47

16.0 0.87 -54.8 -5.61 0.52 -178.4 0.121 -134.6 0.70 -45.6 2.04

17.0 0.87 -62.8 -7.09 0.44 170.1 0.116 -144.1 0.73 -55.9 1.05

18.0 0.92 -73.6 -8.34 0.38 156.1 0.109 -157.4 0.76 -68.7 1.90

Freq Fmin

opt

opt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.17 0.34 34.80 0.04 27.83

0.9 0.22 0.32 53.00 0.04 23.57

1.0 0.24 0.32 60.50 0.04 22.93

1.9 0.42 0.29 108.10 0.04 18.35

2.0 0.45 0.29 111.10 0.04 17.91

2.4 0.51 0.30 136.00 0.04 16.39

3.0 0.59 0.32 169.90 0.05 15.40

3.9 0.69 0.34 -151.60 0.05 13.26

5.0 0.90 0.45 -119.50 0.09 11.89

5.8 1.14 0.50 -101.60 0.16 10.95

6.0 1.17 0.52 -99.60 0.18 10.64

7.0 1.24 0.58 -79.50 0.33 9.61

8.0 1.57 0.60 -57.90 0.56 8.36

9.0 1.64 0.69 -39.70 0.87 7.77

10.0 1.8 0.80 -22.20 1.34 7.68

Notes:

1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based

on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true

Fmin is calculated. Refer to the noise parameter application section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of

the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-

necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter

via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Typical Noise Parameters, VDS = 3V, IDS = 40 mA

Figure 19. MSG/MAG and |S21|2 vs.

Frequency at 3V, 40 mA.

MAG

S21

FREQUENCY (GHz)

MSG/MAG and S21 (dB)

02010515

-5

-15

MSG

ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.99 -18.9 28.84 27.66 167.6 0.01 80.0 0.54 -14.0 34.42

0.5 0.81 -80.8 26.04 20.05 128.0 0.03 52.4 0.40 -58.8 28.25

0.9 0.71 -117.9 22.93 14.01 106.2 0.04 41.8 0.29 -83.8 25.44

1.0 0.69 -124.4 22.24 12.94 102.2 0.05 40.4 0.27 -88.5 24.13

1.5 0.64 -149.8 19.40 9.34 86.1 0.05 36.1 0.21 -105.2 22.71

1.9 0.62 -164.9 17.66 7.64 75.6 0.06 33.8 0.17 -114.7 21.05

2.0 0.62 -168.3 17.28 7.31 73.3 0.06 33.3 0.17 -117.0 20.86

2.5 0.60 176.2 15.58 6.01 61.8 0.07 30.1 0.13 -129.7 19.34

3.0 0.60 162.3 14.15 5.10 51.0 0.08 26.5 0.11 -146.5 18. 04

4.0 0.62 137.1 11.81 3.90 30.8 0.09 17.1 0.10 165.2 1 4.87

5.0 0.66 115.5 9.87 3.11 11.7 0.11 6.8 0.14 131.5 13.27

6.0 0.69 97.2 8.22 2.58 -6.4 0.12 -3.9 0.18 112.4 11.72

7.0 0.70 80.2 6.85 2.20 -24.0 0.13 -15.8 0.20 94.3 10.22

8.0 0.72 62.2 5.58 1.90 -41.8 0.14 -28.0 0.23 70.1 9.02

9.0 0.76 45.0 4.40 1.66 -59.9 0.15 -39.6 0.29 50.6 8.38

10.0 0.83 28.4 3.06 1.42 -78.7 0.15 -55.1 0.38 36.8 8.71

11.0 0.85 13.9 1.60 1.20 -95.8 0.15 -68.6 0.46 24.4 7.55

12.0 0.88 -0.2 0.43 1.05 -111.1 0.15 -80.9 0.51 11.3 7.55

13.0 0.89 -14.6 -0.65 0.93 -128.0 0.15 -94.9 0.55 -5.2 6.70

14.0 0.88 -30.6 -1.98 0.80 -146.1 0.14 -109.3 0.61 -20.8 5.01

15.0 0.88 -45.0 -3.62 0.66 -162.7 0.13 -122.9 0.66 -35.0 3.73

16.0 0.88 -54.5 -5.37 0.54 -176.6 0.12 -133.7 0.70 -45.8 2.54

17.0 0.88 -62.5 -6.83 0.46 171.9 0.12 -143.2 0.73 -56.1 1.57

18.0 0.92 -73.4 -8.01 0.40 157.9 0.11 -156.3 0.76 -68.4 2.22

Freq Fmin

opt

opt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.15 0.34 42.3 0.04 28.50

0.9 0.20 0.32 62.8 0.04 24.18

1.0 0.22 0.32 67.6 0.04 23.47

1.9 0.42 0.27 116.3 0.04 18.67

2.0 0.45 0.27 120.1 0.04 18.29

2.4 0.52 0.26 145.8 0.04 16.65

3.0 0.59 0.29 178.0 0.05 15.56

3.9 0.70 0.36 -145.4 0.05 13.53

5.0 0.93 0.47 -116.0 0.10 12.13

5.8 1.16 0.52 -98.9 0.18 11.10

6.0 1.19 0.55 -96.5 0.20 10.95

7.0 1.26 0.60 -77.1 0.37 9.73

8.0 1.63 0.62 -56.1 0.62 8.56

9.0 1.69 0.70 -38.5 0.95 7.97

10.0 1.73 0.79 -21.5 1.45 7.76

Notes:

1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based

on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true

Fmin is calculated. Refer to the noise parameter application section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of

the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-

necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter

via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Typical Noise Parameters, VDS = 3V, IDS = 60 mA

Figure 20. MSG/MAG and |S21|2 vs.

Frequency at 3V, 60 mA.

MAG

S21

FREQUENCY (GHz)

MSG/MAG and S21 (dB)

02010515

-5

-15

MSG

ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 80 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.98 -20.4 28.32 26.05 167.1 0.01 79.4 0.26 -27.6 34.16

0.5 0.80 -85.9 25.32 18.45 126.8 0.04 53.3 0.29 -104.9 26.64

0.9 0.72 -123.4 22.10 12.73 105.2 0.05 43.9 0.30 -138.8 24.06

1.0 0.70 -129.9 21.40 11.75 101.3 0.05 42.7 0.30 -144.3 23.71

1.5 0.66 -154.6 18.55 8.46 85.4 0.06 38.6 0.30 -165.0 21.49

1.9 0.65 -169.5 16.81 6.92 74.9 0.07 35.7 0.29 -177.6 19.95

2.0 0.64 -172.8 16.42 6.62 72.6 0.07 35.0 0.29 179.4 19.76

2.5 0.64 172.1 14.69 5.42 61.1 0.09 30.6 0.29 164.4 17.80

3.0 0.63 158.5 13.24 4.59 50.1 0.10 25.5 0.29 150.2 16.62

4.0 0.66 133.8 10.81 3.47 29.9 0.12 13.4 0.33 126.1 14.61

5.0 0.69 112.5 8.74 2.74 11.1 0.13 1.2 0.39 107.8 12.03

6.0 0.72 94.3 7.03 2.25 -6.5 0.14 -11.3 0.42 91.8 10.52

7.0 0.73 77.4 5.63 1.91 -23.5 0.15 -24.5 0.44 75.5 9.12

8.0 0.74 59.4 4.26 1.63 -41.1 0.16 -38.1 0.47 55.5 7.78

9.0 0.78 42.1 2.98 1.41 -58.7 0.17 -51.1 0.52 37.8 7.12

10.0 0.84 25.6 1.51 1.19 -76.4 0.16 -66.8 0.59 24.0 6.96

11.0 0.86 11.4 0.00 1.00 -92.0 0.16 -79.8 0.64 11.8 6.11

12.0 0.88 -2.6 -1.15 0.88 -105.9 0.16 -91.7 0.68 -0.8 5.67

13.0 0.89 -17.0 -2.18 0.78 -121.7 0.15 -105.6 0.70 -16.7 5.08

14.0 0.87 -33.3 -3.48 0.67 -138.7 0.14 -119.5 0.73 -31.7 3.67

15.0 0.87 -47.3 -5.02 0.56 -153.9 0.13 -132.3 0.76 -44.9 2.65

16.0 0.86 -55.6 -6.65 0.47 -165.9 0.12 -141.7 0.78 -54.9 1.48

17.0 0.86 -63.4 -7.92 0.40 -175.9 0.11 -150.4 0.79 -64.2 0.49

18.0 0.91 -74.2 -8.92 0.36 171.2 0.10 -163.0 0.81 -76.2 1.29

Freq Fmin

opt

opt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.19 0.23 66.9 0.04 27.93

0.9 0.24 0.24 84.3 0.04 24.13

1.0 0.25 0.25 87.3 0.04 23.30

1.9 0.43 0.28 134.8 0.04 18.55

2.0 0.42 0.29 138.8 0.04 18.15

2.4 0.51 0.30 159.5 0.03 16.44

3.0 0.61 0.35 -173 0.03 15.13

3.9 0.70 0.41 -141.6 0.06 12.97

5.0 0.94 0.52 -113.5 0.13 11.42

5.8 1.20 0.56 -97.1 0.23 10.48

6.0 1.26 0.58 -94.8 0.26 10.11

7.0 1.34 0.62 -75.8 0.46 8.86

8.0 1.74 0.63 -55.5 0.76 7.59

9.0 1.82 0.71 -37.7 1.17 6.97

10.0 1.94 0.79 -20.8 1.74 6.65

Notes:

1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based

on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true

Fmin is calculated. Refer to the noise parameter application section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of

the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-

necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter

via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Typical Noise Parameters, VDS = 3V, IDS = 80 mA

Figure 21. MSG/MAG and |S21|2 vs.

Frequency at 3V, 80 mA.

MAG

S21

FREQUENCY (GHz)

MSG/MAG and S21 (dB)

02010515

-5

-15

MSG

ATF-54143 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA

Freq. S11 S21 S12 S22

MSG/MAG

GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB

0.1 0.99 -18.6 28.88 27.80 167.8 0.01 80.1 0.58 -12.6 34.44

0.5 0.81 -80.2 26.11 20.22 128.3 0.03 52.4 0.42 -52.3 28.29

0.9 0.71 -117.3 23.01 14.15 106.4 0.04 41.7 0.31 -73.3 25.49

1.0 0.69 -123.8 22.33 13.07 102.4 0.04 40.2 0.29 -76.9 25.14

1.5 0.64 -149.2 19.49 9.43 86.2 0.05 36.1 0.22 -89.4 22.76

1.9 0.62 -164.5 17.75 7.72 75.7 0.06 34.0 0.18 -95.5 21.09

2.0 0.61 -167.8 17.36 7.38 73.3 0.06 33.5 0.18 -97.0 20.90

2.5 0.60 176.6 15.66 6.07 61.9 0.07 30.7 0.14 -104.0 19.38

3.0 0.60 162.6 14.23 5.15 51.1 0.07 27.3 0.11 -113.4 18.67

4.0 0.62 137.4 11.91 3.94 30.9 0.09 18.7 0.07 -154.7 15.46

5.0 0.65 115.9 10.00 3.16 11.7 0.10 9.0 0.09 152.5 13.20

6.0 0.68 97.6 8.36 2.62 -6.6 0.11 -1.4 0.12 127.9 11.73

7.0 0.70 80.6 7.01 2.24 -24.3 0.12 -12.9 0.15 106.9 10.47

8.0 0.72 62.6 5.76 1.94 -42.3 0.13 -24.7 0.17 78.9 9.31

9.0 0.76 45.4 4.60 1.70 -60.5 0.14 -36.1 0.23 56.8 8.69

10.0 0.83 28.5 3.28 1.46 -79.6 0.15 -51.8 0.32 42.1 9.88

11.0 0.86 14.1 1.87 1.24 -97.0 0.15 -65.4 0.41 29.4 9.17

12.0 0.88 -0.4 0.69 1.08 -112.8 0.15 -78.0 0.47 16.0 8.57

13.0 0.90 -14.9 -0.39 0.96 -130.2 0.15 -92.2 0.51 -1.1 8.06

14.0 0.87 -31.4 -1.72 0.82 -148.8 0.15 -107.3 0.58 -17.6 4.90

15.0 0.88 -46.0 -3.38 0.68 -166.0 0.14 -121.2 0.63 -32.6 3.86

16.0 0.88 -54.8 -5.17 0.55 179.8 0.13 -132.2 0.69 -43.7 2.65

17.0 0.87 -62.8 -6.73 0.46 168.4 0.12 -142.3 0.72 -54.2 1.33

18.0 0.92 -73.7 -7.93 0.40 154.3 0.11 -155.6 0.75 -67.2 2.26

Freq Fmin

opt

opt Rn/50 Ga

GHz dB Mag. Ang. dB

0.5 0.17 0.33 34.30 0.03 28.02

0.9 0.25 0.31 60.30 0.04 24.12

1.0 0.27 0.31 68.10 0.04 23.43

1.9 0.45 0.27 115.00 0.04 18.72

2.0 0.49 0.27 119.80 0.04 18.35

2.4 0.56 0.26 143.50 0.04 16.71

3.0 0.63 0.28 176.80 0.04 15.58

3.9 0.73 0.35 -145.90 0.05 13.62

5.0 0.96 0.47 -116.20 0.11 12.25

5.8 1.20 0.52 -98.80 0.19 11.23

6.0 1.23 0.54 -96.90 0.21 11.02

7.0 1.33 0.60 -77.40 0.38 9.94

8.0 1.66 0.63 -56.20 0.64 8.81

9.0 1.71 0.71 -38.60 0.99 8.22

10.0 1.85 0.82 -21.30 1.51 8.12

Notes:

1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based

on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements a true

Fmin is calculated. Refer to the noise parameter application section for more information.

2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of

the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-

necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter

via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

Typical Noise Parameters, VDS = 4V, IDS = 60 mA

Figure 22. MSG/MAG and |S21|2 vs.

Frequency at 4V, 60 mA.

MSG

S21

FREQUENCY (GHz)

MSG/MAG and S21 (dB)

02010515

-5

-15

MSG

MAG

Figure 23. Typical ATF-54143 LNA with Passive Biasing.

Capacitors C2 and C5 provide a low impedance in-band

RF bypass for the matching networks. Resistors R3 and

R4 provide a very important low frequency termina-

tion for the device. The resistive termination improves

low frequency stability. Capacitors C3 and C6 provide

the low frequency RF bypass for resistors R3 and R4.

Their value should be chosen carefully as C3 and C6

ATF-54143 Applications Information

Introduction

Avago Technologies’ ATF-54143 is a low noise

enhancement mode PHEMT designed for use in low

cost commercial applications in the VHF through 6 GHz

frequency range. As opposed to a typical depletion

mode PHEMT where the gate must be made negative

with respect to the source for proper operation, an

enhancement mode PHEMT requires that the gate

be made more positive than the source for normal

operation. Therefore a negative power supply voltage is

not required for an enhancement mode device. Biasing

an enhancement mode PHEMT is much like biasing the

typical bipolar junction transistor. Instead of a 0.7V base

to emitter voltage, the ATF-54143 enhancement mode

PHEMT requires about a 0.6V potential between the

gate and source for a nominal drain current of 60 mA.

Matching Networks

The techniques for impedance matching an en-

hancement mode device are very similar to those for

matching a depletion mode device. The only di erence

is in the method of supplying gate bias. S and Noise

Parameters for various bias conditions are listed in

this data sheet. The circuit shown in Figure 23 shows a

typical LNA circuit normally used for 900 and 1900 MHz

applications (Consult the Avago Technologies website

for application notes covering speci c applications).

High pass impedance matching networks consisting

of L1/C1 and L4/C4 provide the appropriate match for

noise  gure, gain, S11 and S22. The high pass structure

also provides low frequency gain reduction which can

be bene cial from the standpoint of improving out-of-

band rejection at lower frequencies.

also provide a termination for low frequency mixing

products. These mixing products are as a result of two

or more in-band signals mixing and producing third

order in-band distortion products. The low frequency or

di erence mixing products are bypassed by C3 and C6.

For best suppression of third order distortion products

based on the CDMA 1.25 MHz signal spacing, C3 and C6

should be 0.1 μF in value. Smaller values of capacitance

will not suppress the generation of the 1.25 MHz di er-

ence signal and as a result will show up as poorer two

tone IP3 results.

Bias Networks

One of the major advantages of the enhancement mode

technology is that it allows the designer to be able to dc

ground the source leads and then merely apply a positive

voltage on the gate to set the desired amount of quiescent

drain current Id.

Whereas a depletion mode PHEMT pulls maximum

drain current when Vgs = 0V, an enhancement mode

PHEMT pulls only a small amount of leakage current

when Vgs=0V. Only when Vgs is increased above Vto,

the device threshold voltage, will drain current start to

 ow. At a Vds of 3V and a nominal Vgs of 0.6V, the drain

current Id will be approximately 60 mA. The data sheet

suggests a minimum and maximum Vgs over which

the desired amount of drain current will be achieved.

It is also important to note that if the gate terminal is

left open circuited, the device will pull some amount of

drain current due to leakage current creating a voltage

di erential between the gate and source terminals.

Passive Biasing

Passive biasing of the ATF-54143 is accomplished by

the use of a voltage divider consisting of R1 and R2. The

voltage for the divider is derived from the drain voltage

which provides a form of voltage feedback through the

use of R3 to help keep drain current constant. Resistor

R5 (approximately 10k) provides current limiting for

the gate of enhancement mode devices such as the

ATF-54143. This is especially important when the device

is driven to P1dB or PSAT.

Resistor R3 is calculated based on desired Vds, Ids and

available power supply voltage.

R3 = VDD – Vds (1)

Ids + IBB

VDD is the power supply voltage.

Vds is the device drain to source voltage.

Ids is the desired drain current.

Vdd

L2 L3

R1 R2

C1 Zo

Q1 OUTPUT

INPUT

IBB is the current  owing through the R1/R2 resistor

voltage divider network.

The values of resistors R1 and R2 are calculated with the

following formulas

R1 = Vgs (2)

IBB

R2 = (Vds – Vgs) R1 (3)

Vgs

Example Circuit

VDD = 5V

Vds = 3V

Ids = 60 mA

Vgs = 0.59V

Choose IBB to be at least 10X the normal expected gate

leakage current. IBB was chosen to be 2 mA for this

example. Using equations (1), (2), and (3) the resistors

are calculated as follows

R1 = 295

R2 = 1205

R3 = 32.3

Active Biasing

Active biasing provides a means of keeping the

quiescent bias point constant over temperature and

constant over lot to lot variations in device dc per-

formance. The advantage of the active biasing of an

enhancement mode PHEMT versus a depletion mode

PHEMT is that a negative power source is not required.

The techniques of active biasing an enhancement

mode device are very similar to those used to bias a

bipolar junction transistor.

An active bias scheme is shown in Figure 24. R1 and

R2 provide a constant voltage source at the base of a

PNP transistor at Q2. The constant voltage at the base

of Q2 is raised by 0.7 volts at the emitter. The constant

emitter voltage plus the regulated VDD supply are

present across resistor R3. Constant voltage across R3

provides a constant current supply for the drain current.

Resistors R1 and R2 are used to set the desired Vds. The

combined series value of these resistors also sets the

amount of extra current consumed by the bias network.

The equations that describe the circuit’s operation are

as follows.

VE = Vds + (Ids • R4) (1)

R3 = VDD – VE (2)

Ids

VB = VE – VBE (3)

VB = R1 VDD (4)

R1 + R2

VDD = IBB (R1 + R2) (5)

Rearranging equation (4) provides the following

formula:

R2 = R1 (VDD – VB) (4A)

and rearranging equation (5) provides the following

formula:

R1 =

VDD (5A)

IBB (1 + VDD – VB )

Example Circuit

VDD = 5V

Vds = 3V

Ids = 60 mA

R4 = 10

VBE = 0.7V

Equation (1) calculates the required voltage at the

emitter of the PNP transistor based on desired Vds and

Ids through resistor R4 to be 3.6V. Equation (2) calcu-

lates the value of resistor R3 which determines the

drain current Ids. In the example R3=23.3. Equation

(3) calculates the voltage required at the junction of

resistors R1 and R2. This voltage plus the step-up of

the base emitter junction determines the regulated

Vds. Equations (4) and (5) are solved simultaneously

to determine the value of resistors R1 and R2. In the

example R1=1450 and R2=1050. R7 is chosen to

be 1k. This resistor keeps a small amount of current

 owing through Q2 to help maintain bias stability. R6 is

chosen to be 10k. This value of resistance is necessary

to limit Q1 gate current in the presence of high RF drive

level (especially when Q1 is driven to P1dB gain com-

pression point).

INPUT C1

R7 R3

Q2 Vdd

L2 L3

Zo Zo

OUTPUT

Figure 24. Typical ATF-54143 LNA with Active Biasing.

GATE

SOURCE

INSIDE Package

Port

Num=1

C=0.13 pF

Port

Num=2

SOURCE

DRAIN

Port

Num=4

Port

Num=3

L=0.175 nH

R=0.001

C=0.159 pF

L=0.746 nH

R=0.001

MSub

TLINP

TL4

Z=Z1 Ohm

L=15 mil

K=1

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL10

Z=Z1 Ohm

L=15 mil

K=1

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL3

Z=Z2 Ohm

L=25 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL9

Z=Z2 Ohm

L=10.0 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

VAR

VAR1

K=5

Z2=85

Z1=30

Var

Egn TLINP

TL1

Z=Z2/2 Ohm

L=20 0 mil

K=K

A=0.0000

F=1 GHz

TanD=0.001

TLINP

TL2

Z=Z2/2 Ohm

L=20 0 mil

K=K

A=0.0000

F=1 GHz

TanD=0.001

TLINP

TL8

Z=Z1 Ohm

L=15.0 mil

K=1

A=0.0000

F=1 GHz

TanD=0.001

TLINP

TL7

Z=Z2/2 Ohm

L=5.0 mil

K=K

A=0.0000

F=1 GHz

TanD=0.001

TLINP

TL5

Z=Z2 Ohm

L=26.0 mil

K=K

A=0.0000

F=1 GHz

TanD=0.001

TLINP

TL6

Z=Z1 Ohm

L=15.0 mil

K=1

A=0.0000

F=1 GHz

TanD=0.001

L=0.477 nH

R=0.001

L=0.4 nH

R=0.001

GaAsFET

FET1

Mode1=MESFETM1

Mode=Nonlinear

MSUB

MSub1

H=25.0 mil

Er=9.6

Mur=1

Cond=1.0E+50

Hu=3.9e+034 mil

T=0.15 mil

TanD=0

Rough=0 mil

NFET=yes

PFET=no

Vto=0.3

Beta=0.9

Lambda=82e-3

Alpha=13

Tau=

Tnom=16.85

Idstc=

Ucrit=-0.72

Vgexp=1.91

Gamds=1e-4

Vtotc=

Betatce=

Rgs=0.25 Ohm

Rf=

Gscap=2

Cgs=1.73 pF

Cgd=0.255 pF

Gdcap=2

Fc=0.65

Rgd=0.25 Ohm

Rd=1.0125 Ohm

Rg=1.0 Ohm

Rs=0.3375 Ohm

Ld=

Lg=0.18 nH

Ls=

Cds=0.27 pF

Rc=250 Ohm

Crf=0.1 F

Gsfwd=

Gsrev=

Gdfwd=

Gdrev=

R1=

R2=

Vbi=0.8

Vbr=

Vjr=

Is=

Ir=

Imax=

Xti=

Eg=

Fnc=1 MHz

R=0.08

P=0.2

C=0.1

Taumdl=no

wVgfwd=

wBvgs=

wBvgd=

wBvds=

wldsmax=

wPmax=

AllParams=

Advanced_Curtice2_Model

MESFETM1

ATF-54143 Die Model

ATF-54143 curtice ADS Model

Figure 25. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.

DRAIN

VIA2

D=20.0 mil

H=25.0 mil

T=0.15 mil

Rho=1.0

W=40.0 mil

VIA2

D=20.0 mil

H=25.0 mil

T=0.15 mil

Rho=1.0

W=40.0 mil

VIA2

D=20.0 mil

H=25.0 mil

T=0.15 mil

Rho=1.0

W=40.0 mil

SOURCE

GATESOURCE

ATF-54143

MSUB

MSub1

H=25.0 mil

Er=9.6

Mur=1

Cond=1.0E+50

Hu=3.9e+034 mil

T=0.15 mil

TanD=0

Rough=0 mil

MSub

VIA2

D=20.0 mil

H=25.0 mil

T=0.15 mil

Rho=1.0

W=40.0 mil

For Further Information

The information presented here is an introduction

to the use of the ATF-54143 enhancement mode

PHEMT. More detailed application circuit information

is available from Avago Technologies. Consult the web

page or your local Avago Technologies sales representa-

tive.

Designing with S and Noise Parameters and the Non-Linear

Model

The non-linear model describing the ATF-54143

includes both the die and associated package model.

The package model includes the e ect of the pins but

does not include the e ect of the additional source

inductance associated with grounding the source leads

through the printed circuit board. The device S and

Noise Parameters do include the e ect of 0.020 inch

thickness printed circuit board vias. When comparing

simulation results between the measured S parameters

and the simulated non-linear model, be sure to include

the e ect of the printed circuit board to get an accurate

comparison. This is shown schematically in Figure 25.

Noise Parameter Applications Information

Fmin values at 2 GHz and higher are based on measure-

ments while the Fmins below 2 GHz have been extrapo-

lated. The Fmin values are based on a set of 16 noise

 gure measurements made at 16 di erent impedances

using an ATN NP5 test system. From these measure-

ments, a true Fmin is calculated. Fmin represents the true

minimum noise  gure of the device when the device is

presented with an impedance matching network that

transforms the source impedance, typically 50ý, to an

impedance represented by the re ection coe cient Go.

The designer must design a matching network that will

present Go to the device with minimal associated circuit

losses. The noise  gure of the completed ampli er is

equal to the noise  gure of the device plus the losses

of the matching network preceding the device. The

noise  gure of the device is equal to Fmin only when

the device is presented with Go. If the re ection coef-

 cient of the matching network is other than Go, then

the noise  gure of the device will be greater than Fmin

based on the following equation.

NF = Fmin + 4 Rn |



s –



o | 2

Zo (|1 +



o|2)(1 - |



s|2)

Where Rn/Zo is the normalized noise resistance, Go is

the optimum re ection coe cient required to produce

Fmin and Gs is the re ection coe cient of the source

impedance actually presented to the device. The losses

of the matching networks are non-zero and they will

also add to the noise  gure of the device creating a

higher ampli er noise  gure. The losses of the matching

networks are related to the Q of the components and

associated printed circuit board loss. Go is typically fairly

low at higher frequencies and increases as frequency is

lowered. Larger gate width devices will typically have a

lower Go as compared to narrower gate width devices.

Typically for FETs, the higher Go usually infers that an

impedance much higher than 50ý is required for the

device to produce Fmin. At VHF frequencies and even

lower L Band frequencies, the required impedance can

be in the vicinity of several thousand ohms. Matching

to such a high impedance requires very hi-Q compo-

nents in order to minimize circuit losses. As an example

at 900 MHz, when airwwound coils (Q>100) are used for

matching networks, the loss can still be up to 0.25 dB

which will add directly to the noise  gure of the device.

Using muiltilayer molded inductors with Qs in the 30

to 50 range results in additional loss over the airwound

coil. Losses as high as 0.5 dB or greater add to the

typical 0.15 dB Fmin of the device creating an ampli er

noise  gure of nearly 0.65 dB. A discussion concerning

calculated and measured circuit losses and their e ect

on ampli er noise  gure is covered in Avago Technolo-

gies Application 1085.

Ordering Information

Part Number No. of Devices Container

ATF-54143-TR1G 3000 7” Reel

ATF-54143-TR2G 10000 13”Reel

ATF-54143-BLKG 100 antistatic bag

Package Dimensions

Outline 43 (SO%-343/SC70 4 lead)

1.30 (.051)

BSC

1.15 (.045) BSC

DIMENSIONS (mm)

MIN.

1.15

1.85

1.80

0.80

0.00

0.15

0.55

0.10

MAX.

1.35

2.25

2.40

1.10

1.00

0.10

0.40

0.70

0.20

0.46

SYMBOL

NOTES:

1. All dimensions are in mm.

2. Dimensions are inclusive of plating.

3. Dimensions are exclusive of mold ash & metal burr.

4. All specications comply to EIAJ SC70.

5. Die is facing up for mold and facing down for trim/form,

ie: reverse trim/form.

6. Package surface to be mirror nish.

Recommended PCB Pad Layout for

Avago’s SC70 4L/SOT-343 Products

1.30

(0.051)

0.60

(0.024)

0.9

(0.035)

Dimensions in mm

(inches)

1.15

(0.045)

2.00

(0.079)

1.00

(0.039)

For product information and a complete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.

AV02-0488EN - June 8, 2012

PPoP2

10 MAX.

t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)

10 MAX.

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

2.40 ± 0.10

1.20 ± 0.10

4.00 ± 0.10

1.00 + 0.25

0.094 ± 0.004

0.047 ± 0.004

0.157 ± 0.004

0.039 + 0.010

CAVITY

DIAMETER

PITCH

POSITION

1.55 ± 0.10

4.00 ± 0.10

1.75 ± 0.10

0.061 + 0.002

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS

8.00 + 0.30 - 0.10

0.254 0.02

0.315 + 0.012

0.0100 ± 0.0008

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

WIDTH

TAPE THICKNESS

5.40 ± 0.10

0.062 ± 0.001

0.205 + 0.004

0.0025 ± 0.0004

COVER TAPE

Tape Dimensions For Outline 4T

Device Orientation

USER

FEED

DIRECTION

COVER TAPE

CARRIER

TAPE

REEL

END VIEW

8 mm

4 mm

TOP VIEW

4Fx 4Fx

4Fx4Fx