MSCXXXX.PDF 06-03-99
MS2421
DESCRIPTION:DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS Power Dissipation 875 W
VCES Collector-Emitter Voltage 65 V
VCBO Collector-Base Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
TJJunction Temperature 200
ºC
ICDevice Current 22 A
TSTG Storage Temperature -65 to +200
ºC
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 0.20 °°C/W
Features
·
· GOLD METALLIZATION
· Pout = 300W MINIMUM
· Gp = 6.3 dB MINIMUM
· INFINITE VSWR CAPABILITY @ RATED CONDITIONS
· EMITTER BALLASTED
· COMMON EMITTER
The MS2421 is a gold metallized silicon, NPN power transistor
designed for applications requiring high peak power and low duty
cycles such as IFF, DME, and TACAN. The MS2421 is designed
with internal input/output matching resulting in improved
broadband performance and low thermal resistance.
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MSCXXXX.PDF 06-03-99
MS2421
ELECTRICAL SPECIFICATIONS ( ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 10 mA IE = 0 mA 65 --- --- V
BVEBO IE = 5.0 mA IC = 0 mA 3.5 --- --- V
ICES VCE = 50 V --- --- 25 mA
HFE VCE = 5 V IC= 500mA 10 --- 200 mA
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f =1025 - 1150 MHz PIN = 70W VCE =50V 300 --- --- W
GPf =1025 - 1150 MHz PIN = 70W VCE =50V 6.3 --- --- dB
nCf =1025 - 1150 MHz PIN = 70W VCE =50V 35 --- --- %
Condition
s
Pulse Width = 10 mms Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN(W) ZCL(W)
960 MHz 2.6 + j6.0 2.5 – j6.0
1090 MHz 7.4 + j4.4 2.4 – j6.2
1215 MHz 4.3 + j1.1 2.5 – j4.9
Pin = 70W Vce = 50V
MSCXXXX.PDF 06-03-99
MS2421
PACKAGE MECHANICAL DATA
