09/03/03
www.irf.com 1
HEXFET® is a registered trademark of International Rectifier.
IRF2807Z
IRF2807ZS
IRF2807ZL
HEXFET® Power MOSFET
S
D
G
VDSS = 75V
RDS(on) = 9.4mΩ
ID = 75A
Features
OAdvanced Process Technology
OUltra Low On-Resistance
ODynamic dv/dt Rating
O175°C Operating Temperature
OFast Switching
ORepetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications. D2Pak
IRF2807ZS
TO-220AB
IRF2807Z TO-262
IRF2807ZL
Absolute Maximum RatingsParameter Units
ID @ TC = 25 °C Co ntin uo us D r ai n C ur rent , V GS @ 10V ( Sili c on Li m i t e d) A
ID @ TC = 10 0°C Co ntin uo us D r ai n C ur rent , V GS @ 10V ( See Fi g. 9)
ID @ TC = 25 °C Co ntin uo us D r ai n C ur rent , V GS @ 10V (Package Limited)
IDM Pulsed D r ain C urrent
c
PD @TC = 25°C Maximum Power D issi pation W
Linear Derati ng Fact or W/°C
VGS Gate-t o- Source Voltage V
EAS Single Pulse Ava lanche En er gy (The rmally Li mited)
d
mJ
EAS (tested) Sin
g
le Pul se Avalanch e Ener
gy
Tes te d Va lu e
i
IAR Avalanche Current
c
A
EAR Re peti tive A v a l a nc he En er
gy
h
mJ
TJ Operatin g Juncti on and °C
TSTG Sto rage Tem perat ur e Ra ng e
Soldering Temperature, for 10 seconds
Mo unti ng t orque, 6-32 or M 3 s c r ew
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.90 °C/W
RθCS Ca s e- to-S i n k , Flat , G r ea s ed S ur f ace 0.50 –––
RθJA Junction-to-Ambient ––– 62
RθJA Junction-to-Ambient (PCB Mount, steady state)
j
––– 40
Max.
89
63
350
75
10 lb f• in (1.1 N•m)
170
1.1
± 20
160
200
See Fig. 12a,12b,15,16
300 ( 1.6mm f rom ca s e )
-5 5 to + 175
PD - 94659A
IRF2807Z/S/L
2www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH,
RG = 25Ω, IAS = 53A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 53A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V(BR)DSS D r ai n- to-Sour c e Br e akdow n V ol t a
g
e75––––––V
∆ΒVDSS
/
∆TJ Br eakdow n Volta
g
e Tem p. Co efficient ––– 0.073 ––– V/°C
RDS(on) Static Dr ain-t o- Sour c e O n- Resistance ––– 7. 5 9. 4 mΩ
VGS(th) G at e Threshold V o lta
g
e 2.0 ––– 4.0 V
g
fs Forward Transconductance 67 ––– ––– S
IDSS Dr ai n- to-S ourc e Le aka
e Cur r ent ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-t o- Sour c e R ev ers e Le ak a
g
e––––––-200
QgTotal Gate Char
g
e ––– 71 110 nC
Qgs Gate-to-Source Char
g
e ––– 19 29
Qgd Gate - to- D rai n ("Mille r") Char
g
e ––– 28 42
td(on) Turn-On Dela
y
Time ––– 18 ––– ns
trRise Time ––– 79 –––
td(off) Turn-Off Del a
y
Tim e ––– 40 –––
tfFall Time ––– 45 –––
LDInternal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
LSInt er nal Sou r ce Inductance ––– 7.5 –– – fr om packa
g
e
and center of die contact
Ciss Input Capacitance ––– 3270 ––– pF
Coss Output Capacitance ––– 420 –––
Crss Reverse Transfer Capacitance ––– 240 –––
Coss Output Capacitance ––– 1590 –––
Coss Output Capacitance ––– 280 –––
Coss ef f. Effective Output Capacitance ––– 440 –––
Diode Charac teristics
Par ame ter Min. T
y
p. Max. Units
ISCont inuous Source Curren t ––– ––– 89
(Body Diode) A
ISM Pulsed Source Current ––– ––– 350
(Body Diode)
c
VSD Diod e For ward Vol tage ––– ––– 1.3 V
trr Reverse Recovery Time –––4669ns
Qrr Reverse Recover
y
Char
g
e–––80120nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 25 0µA
Refe ren ce to 2 5 °C, ID = 1m A
VGS = 10V, ID = 53A
f
VDS = VGS, ID = 250µ A
VDS = 75V , V GS = 0V
VDS = 75V , V GS = 0V, TJ = 12 5°C
RG = 6.2Ω
ID = 53A
VDS = 25V , I D = 53A
VDD = 38V
ID = 53A
VGS = 20V
VGS = -20V
TJ = 25°C, IF = 53 A , V DD = 25V
di/d t = 100A /µ s
f
TJ = 25°C, IS = 53A, VGS = 0V
f
showing the
integra l revers e
p-n junction diod e.
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0 V, VDS = 60 V , ƒ = 1.0MH z
Conditions
VGS = 0V, VDS = 0V to 60V
VDS = 60V
VGS = 10V
f
ƒ = 1. 0M Hz, See F ig . 5
VGS = 0 V, VDS = 1. 0V, ƒ = 1.0MHz
VGS = 10V
f
IRF2807Z/S/L
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100 1000
VDS, Dr ain-to-Source V oltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20µs PU LSE WIDTH
Tj = 25° C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100 1000
VDS, Dr ain-to-Source V oltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20µs PU LSE WIDTH
Tj = 175° C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0 25 50 75 100 125 150
ID,Drain- to-Sour ce Current (A)
0
25
50
75
100
125
150
Gfs, Forward Transconductance (S)
TJ = 25° C
TJ = 175° C
4 6 8 10 12
VGS, Gat e-to-S ource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25° C
TJ = 175° C
VDS = 25V
20µs PU LSE WIDTH
IRF2807Z/S/L
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain- to-Sour ce Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 1020304050607080
QG Total G ate Charge ( nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 60V
VDS= 38V
VDS= 15V
ID= 53A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-D rain Voltage (V)
0
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25° C
TJ = 175° C
VGS = 0V
1 10 100 1000
VDS, Dr ain-to-Source V oltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
1msec
10msec
OPERATION IN THIS AREA
LIMI TED BY RDS(on)
100µsec
Tc = 25°C
Tj = 175° C
Single Pulse
IRF2807Z/S/L
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature Fig 10. Normalized On-Resistance
vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (° C)
0
10
20
30
40
50
60
70
80
90
100
ID, Drain Current (A)
Lim ited By Package
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temper ature (° C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 53A
VGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangul ar Pulse Durati on (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRF2807Z/S/L
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C )
0
50
100
150
200
250
300
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 2 2 A
38A
BOTTOM53A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Tem perature ( °C )
1.0
2.0
3.0
4.0
5.0
VGS(th) Gate threshold Voltage (V)
ID = 250µA
IRF2807Z/S/L
www.irf.com 7
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3· BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Dut y Cycle = Singl e Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperatur e (°C)
0
50
100
150
200
EAR , Avalanche Energy (mJ)
TOP Sin g le Pulse
BOTTOM 10% Duty Cycle
ID = 53A
IRF2807Z/S/L
8www.irf.com
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
IRF2807Z/S/L
www.irf.com 9
L EAD AS S I GN M E N TS
1 - GATE
2 - DR AIN
3 - SO URCE
4 - DR AIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022 )
0.46 (.018 )
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 ( .255)
6.10 ( .240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 ( .600)
14.84 ( .584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORM S TO JEDEC OUTLINE T O-220AB.
2 CONT ROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
RECTIFI ER
LOGO
EXAMPLE : THIS IS AN IRF 1010
WITH ASSE MBLY
LOT CODE 9 B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9B 1M
A
IRF2807Z/S/L
10 www.irf.com
D2Pak Part Marking Information
F 530S
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS S E MB LE D ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
AS S E MB L Y
LOT CODE
INT ERNAT IONAL
RECTIFIER
LOGO
PART NUMBER
DAT E CODE
YE AR 0 = 2000
WE E K 02
LINE L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
IRF2807Z/S/L
www.irf.com 11
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXA
M
PLE:THIS IS A
N IRL3103L
LOT C
O
DE 1789
A
SSEM
BLY
PA
RT NUMBER
DA
TE C
ODE
W
EEK 19
LINE C
LO
T C
ODE
YEA
R 7 = 1997
A
SSEM
BLED O
N WW
19, 1997
IN THE A
SSEM
BLY LINE "C
"LOG
O
REC
TIFIER
INTERNA
TIONA
L
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
IRF2807Z/S/L
12 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/03
TO-220AB package is not recommended for Surface Mount Application.
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
F E E D DIRE CTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F E E D DIRE CTION
10. 90 ( . 4 29)
10. 70 ( . 4 21) 16.10 (. 634)
15.90 ( .626)
1. 75 (.069 )
1. 25 (.049 )
11.60 (.457)
11.40 (.449) 1 5.42 (.609)
15.22 (.601)
4.72 ( .136)
4.52 ( .178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/