New Product SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Supressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % * Excellent clamping capability * Low inductance DO-214AA (SMB) * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS * Halogen-free according to IEC 61249-2-21 definition VBR 6.8 V to 220 V PPPM 600 W PD 5.0 W IFSM (uni-directional only) 100 A TJ max. 150 C TYPICAL APPLCIATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SM6T12CA). Electrical characteristics apply in both directions. Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) PPPM (1)(2) 600 W See next table A 5.0 W 100 A - 65 to + 150 C Peak power pulse current with a 10/1000 s waveform (fig. 3) Power dissipation on infinite heatsink TA = 50 C Peak forward surge current 10 ms single half sine-wave uni-directional only Operating junction and storage temperature range IPPM (1) PD IFSM (2) TJ, TSTG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Document Number: 89425 Revision: 20-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM6T Series Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE TYPE (1) DEVICE MARKING CODE UNI BI BREAKDOWN VOLTAGE VBR AT IT (V) (2) MIN. TEST CURRENT (mA) STAND-OFF LEAKAGE VOLTAGE CURRENT VRM IRM AT VRM (V) (A) (3) CLAMPING VOLTAGE VC AT IPP 10/1000 s MAX. (V) (A) CLAMPING VOLTAGE VC AT IPP 8/20 s (V) T MAX. 10-4/C (A) SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7 SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1 SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3 SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8 SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4 SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8 SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2 SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4 SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6 SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7 SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59.0 68 9.8 SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9 SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0 SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4 SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6 SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8 SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8 SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8 Notes (1) For bi-directional devices add suffix "CA" (2) V BR measured after IT applied for 300 s square wave pulse (3) For bipolar devices with V = 10 V or under, the I limit is doubled R T THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to ambient air RJA Typical thermal resistance, junction to lead (1) RJL VALUE UNIT 100 C/W 20 C/W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM6T10A-M3/52 0.096 52 750 7" diameter plastic tape and reel SM6T10A-M3/5B 0.096 5B 3200 13" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89425 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM6T Series Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 6000 CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 10 1.0 s 10 s 100 s 1.0 ms 1 10 ms 10 100 200 VWM - Reverse Stand-Off Voltage (V) td - Pulse Width (s) Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Uni-Directional Bi-Directional 75 50 25 25 50 75 100 125 150 175 1.0 0.1 0.001 0 0 10 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (C) t - Pulse Duration (s) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance 200 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Value IPPM 100 Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 t - Time (ms) Fig. 3 - Pulse Waveform Document Number: 89425 Revision: 20-Apr-11 4.0 1 10 100 Number of Cycles at 60 Hz Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SM6T Series Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89425 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. 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