VSLB9530S
www.vishay.com Vishay Semiconductors
Rev. 1.1, 03-Sep-13 1Document Number: 82564
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
DESCRIPTION
VSLB59530S, is an infrared, 940 nm emitting diode in
GaAlAs multi-quantum well (MQW) technology with high
radiant power and high speed. It is molded in a clear high
power TELUX package with an oval lens resulting in angle of
half intensities in vertical direction of ± 18° and in horizontal
direction of ± 36°.
FEATURES
• Package type: leaded
• Package form: TELUX
• Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity, vertical: ϕv = ± 18°
• Angle of half intensity, horizontal: ϕh = ± 36°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Compatible with wave solder processes according to
CECC 00802
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Emitter source for gesture recognition applications
• Emitter source for 3D TV
• Emitter source for mid range proximity detection
• Emitter source for object/presence detection
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
19232
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕv (deg) ϕh (deg) λp (nm) tr (ns)
VSLB9530S 60 ± 18 ± 36 940 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSLB9530S Tube MOQ: 2100 pcs, 70 pcs/tube TELUX
VSLB9530S
www.vishay.com Vishay Semiconductors
Rev. 1.1, 03-Sep-13 2Document Number: 82564
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF150 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 300 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV232.5 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 95 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 1.5 mm from body preheat
temperature 100 °C/30 s Tsd 260 °C
Thermal resistance junction/ambient RthJA 200 K/W
0 102030405060708090100
Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 200 K/W
0
50
100
150
200
250
0 102030405060708090100
Tamb - Ambient Temperature (°C)
I
F
- Forward Current (mA)
RthJA = 200 K/W
0
160
140
120
100
80
60
40
20
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 100 mA, tp = 20 ms VF1.05 1.28 1.5 V
IF = 150 mA, tp = 20 ms VF1.31 1.55 V
IF = 1.5 A, tp = 100 μs VF1.9 V
Temperature coefficient of VFIF = 150 mA TKVF - 0.89 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ86 pF
Radiant intensity IF = 150 mA, tp = 20 ms Ie40 60 95 mW/sr
IF = 1.5 A, tp = 100 μs Ie520 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe40 mW
Temperature coefficient of φeIF = 150 mA TKφe- 0.42 %/K
Angle of half intensity, vertical ϕv± 18 deg
Angle of half intensity, horizontal ϕh± 36 deg
Peak wavelength IF = 30 mA λp940 nm
Spectral bandwidth IF = 30 mA Δλ 25 nm
Temperature coefficient of λpIF = 30 mA TKλp0.25 nm/K
Rise time IF = 100 mA, 20 % to 80 % tr15 ns
Fall time IF = 100 mA, 20 % to 80 % tf15 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc24 MHz
VSLB9530S
www.vishay.com Vishay Semiconductors
Rev. 1.1, 03-Sep-13 3Document Number: 82564
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Radiant Intensity vs. Forward Current
Fig. 5 - Forward Voltage vs. Ambient Temperature
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
0.001
0.1
1
10
0.5 1.0 2.0
V
F
- Forward Voltage (V)
I
F
- Forward Current (mA)
1.5
0.01
tp = 100 µs
0.1
10
100
1000
0.001 0.01 0.1 10
IF - Forward Current (A)
Ie - Radiant Intensity (mW/sr)
1
1
tp = 100 µs
1.0
1.3
1.4
1.5
- 50 - 25 0 100
Tamb - Ambient Temperature (°C)
VF - Forward Voltage (V)
50
1.2
1.1
7525
tp = 20 ms
IF = 150 mA
50
130
140
150
- 50 - 25 0 100
Tamb - Ambient Temperature (°C)
Ie,rel - Relative Radiant Intensity (%)
50
120
110
7525
tp = 20 ms
IF = 150 mA
80
90
100
70
60
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
IF = 30 mA
0.4 0.2 0
I
e, rel
- Relative Radiant Sensitivity
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
horizontal
vertical
vertical
horizontal
VSLB9530S
www.vishay.com Vishay Semiconductors
Rev. 1.1, 03-Sep-13 4Document Number: 82564
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
VSLB9530S
www.vishay.com Vishay Semiconductors
Rev. 1.1, 03-Sep-13 5Document Number: 82564
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
FAN FOLD BOX DIMENSIONS in millimeters
16491
Label
600
45
110 Label
VSLB9530S
www.vishay.com Vishay Semiconductors
Rev. 1.1, 03-Sep-13 6Document Number: 82564
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TUBE WITH BAR CODE LABEL DIMENSIONS in millimeters
Drawing-No.: 9.700-5223.0-4
Rev. 2; Date: 23.08.99
20438
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 13-Jun-16 1Document Number: 91000
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