VSLB9530S www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES * Package type: leaded * Package form: TELUX * Dimensions (L x W x H in mm): 7.62 x 7.62 x 4.6 * Peak wavelength: p = 940 nm * High reliability * High radiant power * High radiant intensity * Angle of half intensity, vertical: v = 18 * Angle of half intensity, horizontal: h = 36 * Low forward voltage 19232 * Suitable for high pulse current operation * High modulation bandwidth: fc = 24 MHz DESCRIPTION * Good spectral matching with Si photodetectors VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed. It is molded in a clear high power TELUX package with an oval lens resulting in angle of half intensities in vertical direction of 18 and in horizontal direction of 36. * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 * Compatible with wave solder processes according to CECC 00802 APPLICATIONS * Emitter source for gesture recognition applications * Emitter source for 3D TV * Emitter source for mid range proximity detection * Emitter source for object/presence detection PRODUCT SUMMARY COMPONENT Ie (mW/sr) v (deg) h (deg) p (nm) tr (ns) 60 18 36 940 15 VSLB9530S Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE VSLB9530S PACKAGING REMARKS PACKAGE FORM Tube MOQ: 2100 pcs, 70 pcs/tube TELUX Note * MOQ: minimum order quantity Rev. 1.1, 03-Sep-13 Document Number: 82564 1 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB9530S www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 5 V Reverse voltage Forward current IF 150 mA Peak forward current tp/T = 0.5, tp = 100 s IFM 300 mA Surge forward current tp = 100 s IFSM 1.5 A PV 232.5 mW Power dissipation Junction temperature Operating temperature range Tj 100 C Tamb - 40 to + 95 C Tstg - 40 to + 100 C Tsd 260 C RthJA 200 K/W Storage temperature range t 5 s, 1.5 mm from body preheat temperature 100 C/30 s Soldering temperature Thermal resistance junction/ambient 160 140 IF - Forward Current (mA) PV - Power Dissipation (mW) 250 200 150 RthJA = 200 K/W 100 50 120 100 80 RthJA = 200 K/W 60 40 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 Tamb - Ambient Temperature (C) 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.05 1.28 1.5 UNIT V IF = 150 mA, tp = 20 ms VF 1.31 1.55 V IF = 1.5 A, tp = 100 s VF 1.9 V IF = 150 mA TKVF - 0.89 mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 150 mA, tp = 20 ms Ie 10 A 95 mW/sr 86 40 60 pF IF = 1.5 A, tp = 100 s Ie 520 IF = 100 mA, tp = 20 ms e 40 mW IF = 150 mA TKe - 0.42 %/K Angle of half intensity, vertical v 18 deg Angle of half intensity, horizontal h 36 deg nm Radiant power Temperature coefficient of e mW/sr Peak wavelength IF = 30 mA p 940 Spectral bandwidth IF = 30 mA 25 nm Temperature coefficient of p IF = 30 mA TKp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz Cut-off frequency Rev. 1.1, 03-Sep-13 Document Number: 82564 2 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB9530S www.vishay.com Vishay Semiconductors Ie,rel - Relative Radiant Intensity (%) BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) tp = 100 s 1 0.1 0.01 0.001 0.5 1.5 1.0 150 140 130 120 110 100 IF = 150 mA 90 80 70 tp = 20 ms 60 50 - 50 2.0 VF - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage e rel - Relative Radiant Power (%) 100 10 1 0.1 0.001 0.01 0.1 100 75 50 90 IF = 30 mA 80 70 60 50 40 30 20 10 0 840 10 1 IF - Forward Current (A) 880 920 960 1000 1040 - Wavelength (nm) 21445 Fig. 4 - Radiant Intensity vs. Forward Current Fig. 7 - Relative Radiant Power vs. Wavelength 0 1.5 10 20 30 vertical Ie, rel - Relative Radiant Sensitivity VF - Forward Voltage (V) 25 100 tp = 100 s 1.4 1.3 IF = 150 mA 1.2 1.1 tp = 20 ms 1.0 - 50 0 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 1000 Ie - Radiant Intensity (mW/sr) - 25 Tamb - Ambient Temperature (C) - 25 0 25 50 75 100 horizontal vertical 40 1.0 horizontal 0.9 0.8 50 60 70 0.7 - Angular Displacement IF - Forward Current (mA) 10 80 0.6 0.4 0.2 0 Tamb - Ambient Temperature (C) Fig. 5 - Forward Voltage vs. Ambient Temperature Rev. 1.1, 03-Sep-13 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 82564 3 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB9530S www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Rev. 1.1, 03-Sep-13 Document Number: 82564 4 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB9530S www.vishay.com Vishay Semiconductors FAN FOLD BOX DIMENSIONS in millimeters Label 600 45 16491 110 Rev. 1.1, 03-Sep-13 Label Document Number: 82564 5 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSLB9530S www.vishay.com Vishay Semiconductors TUBE WITH BAR CODE LABEL DIMENSIONS in millimeters Drawing-No.: 9.700-5223.0-4 Rev. 2; Date: 23.08.99 20438 Rev. 1.1, 03-Sep-13 Document Number: 82564 6 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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