FSS139
No.7019-1/4
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•2.5V drive.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7019
73001 TS IM TA-2723
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID--4 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --48 A
Allowable Power Dissipation PDMounted on a ceramic board (1200mm2✕0.8mm) 1.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --20 V
Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--4A 6.3 9 S
Marking : S139 Continued on next page.
SANYO Semiconductors
DATA SHEET
FSS139 P-Channel Silicon MOSFET
Load Switching Applications
Package Dimensions
unit : mm
2116
[FSS139]
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
14
58
4.4
0.3
6.0
0.2
5.0
0.595 1.27
1.5
0.1 1.8max
0.43
FSS139
No.7019-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
RDS(on) 1 ID=--4A, VGS=--4V 60 78 mΩ
Static Drain-to-Source On-State Resistance
RDS(on) 2 ID=--2A, VGS=--2.5V 78 110 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 190 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 120 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise T ime trSee specified Test Circuit 200 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 52 ns
Fall T ime tfSee specified Test Circuit 78 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 23 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 1.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 2.3 nC
Diode Forward Voltage VSD IS=--4A, VGS=0 --0.89 --1.5 V
Switching Time Test Circuit
PW=10µs
D.C.≤1%
0V
--4V
VIN
P.G 50Ω
G
S
ID= --4A
RL=2.5Ω
VDD= --10V
VOUT
FSS139
VIN
D
RDS(on) -- Ta
160
140
100
120
80
60
40
20
160120 14010060 804020
0
--40 --20--60
0
RDS(on) -- VGS
0
0
ID -- VGS
--6
--5
--4
--3
--2
--1
--0.4 --1.4--1.2 --2.0--1.8
ID -- VDS
--6
--4
--5
--3
--2
--1
--0.2--0.1 --0.3 --0.4 --0.6--0.5 --0.8 --0.9 --1.0
IT02298 IT02299
IT02300 IT02301
00--0.7 --0.2 --0.6 --1.6--1.0--0.8
--2.5V
--2.0V
Ta=25°C
VGS= --1.5V
ID= --2A, VGS= --2.5V
ID= --4A, VGS= --4.0V
VDS=10V
--25°C
25°C
Ta=75°C
--3.0V
--4.0V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
160
100
140
120
40
60
0
20
--2 --40 --6 --10--8
80
ID= --2A --4A
FSS139
No.7019-3/4
2.5
2.0
1.8
1.5
1.0
0.5
00 20 40 60 80 100 120 140 160
PD -- Ta
--100
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
23 5723 5723 57 23
100ms
<10µs
10ms
1ms
--10
--1.0
--0.1
--0.01
--0.01 --0.1 --1.0 --10
A S O
Operation in this
area is limited by RDS(on).
DC operation
23 5723 57
t
d
(on)
td(off)
tr
tf
100
7
2
3
5
7
2
3
5
10
--0.1 --1.0
SW Time -- ID
VDD= --10V
VGS= --4V
IT02306
IT03273
IT03272
IDP= --48A
ID= --4A
--0.001
--10
--0.3 --0.6 --1.0--0.4
y
fs-- ID
0.1 --1.0--0.1--0.01 --1023 57 23 57 23 57
Ciss, Coss, Crss -- VDS
1000
0 --4 --6--2 --10 --12--8 --14 --16 --20
VGS -- Qg
--10
--3
--2
--1
0
--4
--5
62418 20 22141021216840
IT02302 IT02303
IT02304 IT02305
2
10
1.0
5
2
7
3
5
2
7
3
100
2
3
5
7
2
3
5
7
--18
--0.01
--1.0
--0.1
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
--0.5 --0.7 --0.8 --0.9--0.2
--8
--7
--6
--9
IF -- VSD
VGS=0
--25°C
25°C
Ta=75°C
VDS=10V
Ta= --25°C
25°C
75°C
f=1MHz VDS= --10V
ID= --4A
Ciss
Crss
Coss
100µs
Ciss, Coss, Crss -- pF
Ta=25°C
Single pulse
Mounted on a ceramic board(1200mm
2
✕0.8mm)
Mounted on a ceramic board(1200mm
2
✕0.8mm)
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
FSS139
No.7019-4/4PS
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
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