EMP112
UPDATED 02/06/2006 5.0 – 7.2 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised February 2006
Dimension: 2.65mm x 2.0mm
Thickness: 85um + 15um
FEATURES
• 5.0 – 7.2 GHz Operating Frequency Range
• 30.0dBm Output Power at 1dB Compression
• 20.0 dB Typical Small Signal Gain
• -41dBc OIMD3 @Each Tone Pout 20 dBm
APPLICATIONS
• Point-to-point and point-to-multipoint radio
• Military Radar Systems Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS
(Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 800 mA, Unless Otherwise Specified)
SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS
F Operating Frequency Range 5.0 7.2 GHz
P1dB Output Power at 1dB Gain Compression 29.0 30.0 dBm
Gss Small Signal Gain 17.0 20.0 dB
OIMD3
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 20dBm,
7V, 60%+10%Idss
-41 -38 dBc
Input RL Input Return Loss -12 -8 dB
Output RL Output Return Loss -5 dB
Idss Saturated Drain Current Vds =3V, VGS =0V 980 1140 1350 mA
Vds Drain to Source Voltage 7 8 V
NF Noise Figure @6GHz 8 dB
Rth Thermal Resistance (Au-Sn Eutectic Attach) 11 oC/W
Tb Operating Base Plate Temperature - 35 + 85 ºC
MAXIMUM RATINGS AT 25°C1,2
SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS
Vds Drain to Source Voltage 12V 8 V
VGS Gate to Source Voltage -8V - 4 V
Ids Drain Current Idss 1300mA
IGSF Forward Gate Current 114mA 19 mA
PIN Input Power 27dBm @ 3dB compression
TCH Channel Temperature 175°C 150°C
TSTG Storage Temperature -65/175°C -65/150°C
PT Total Power Dissipation 12.4W 10.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH –Tb)/RTH
EMP112
UPDATED 02/06/2006 5.0 – 7.2 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised February 2006
Typical Performance:
1. Small Signal Performance (@7V, 800mA)
4 5 6 7 8 9
Frequency (GHz)
EMP112 Small Signal Performance
-25
-20
-15
-10
-5
0
5
10
15
20
25
DB(|S[2,1]|) *
DB(|S[1,1]|) *
DB(|S[2,2]|) *
2. OIMD VS Pout @7V, 800mA (@8GHz, ∆f=10MHz) 3. P-1 VS Vds @Idsq=800mA
EMP112 OIMD (dBc) vs. Pout(dBm)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25
Each Tone Pout (dBm)
OIMD (dBc)
OIMD3
OIMD5
EMP112 P1dB(dBm) vs. Vds
25
26
27
28
29
30
31
32
33
45678
Frequency (GHz)
dBm
Vds=8V
Vds=7V
APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)
Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten
or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20 minutes.
Die attach should be done with Gold/Tin (80 /20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC,
and RF contacts.
All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental
discharge through a die.
EMP112
UPDATED 02/06/2006 5.0 – 7.2 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised February 2006
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and
separate the wires to minimize the mutual inductance.
Chip Size 2650 x 2000 microns
Chip Thickness: 85 ± 15 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
CHIP OUTLINE
