Fiber Optics Low Power 1550 nm FP Laser STL81004x STL81005x Features * * * * Designed for applications in fiber optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary Photodiode at rear mirror for monitoring and control of radiant power * Hermetically sealed subcomponents, similar to TO 46 * SM pigtail with optional connector Data Sheet 1 2002-01-01 STL81004x STL81005x Pin Configuration and Flange Pin Configuration and Flange Transmitter (bottom view) 2.54 mm Pinning 1 2 3 LD 1 1 3 4 Figure 1 2 MD 4 Transmitter Available Pinnings with and without Flange Type Transmitter Flange STL81004x 1 without STL81005x 1 with Data Sheet 2 2002-01-01 STL81004x STL81005x Description Description Differences between a Fabry-Perot and a DFB Laserdiode A conventional laser consists of an amplifying medium and two end mirrors. The cavity is longer than one wavelength, and a standing wave is created. The number n of half L wavelengths is n = 2 x --- . If L >> then we speak of a Fabry-Perot Laser because the laserdiode emits multi-longitudinal modes. Typically the laserdiode is 250 m long. For = 1310 nm/1550 nm n is about 350. Therefore for many neighboring wavelengths the "standing wavelength" condition specified above is fulfilled. For a DFB-Laser a special grating acts as a distributed filter allowing only one of the cavity's longitudinal modes to propagate. This can be described with a reduced oscillator length L which is in the range of . For such a reduced oscillator length the standing wavelength condition will be fulfilled for n 2 what means for only one wavelength. Intensity 4 0 Figure 2 Data Sheet 0 11 2 3 Wavelength 4 5 Fabry-Perot Laserdiode 3 2002-01-01 STL81004x STL81005x Description Intensity 4 0 Figure 3 0 1 2 3 Wavelength 4 5 DFB Laserdiode Regulatory Compliance Feature Standard Comments Electrostatic Discharge (ESD) to the Electrical Pins MIL-STD 883D Method 3015.7 Class 1 (<500 V) Data Sheet 4 2002-01-01 STL81004x STL81005x Technical Data Technical Data Absolute Maximum Ratings Parameter Symbol Limit Values min. max. -40 85 -40 85 Unit Module TC Tstg TS Operating temperature range at case Storage temperature range Soldering temperature ( tmax = 10 s, 2 mm distance from bottom edge of case) C 260 Laser Diode Direct forward current Radiant power CW Reverse Voltage IF max PF, rad VR 120 mA 1 mW 2 V VR IF 10 V 2 mA Monitor Diode Reverse Voltage Forward Current The electro-optical characteristics described in the following tables are only valid for use within the specified maximum ratings or under the recommended operating conditions. Transmitter Electro-Optical Characteristics Parameter Symbol Limit Values min. typ. Unit max. Optical output power (maximum) PF, max 0.4 Emission wavelength center of range, PF = 0.5 PF, max. trans 1510 Spectral width (RMS) 5 Temperature coefficient of wavelength TC 0.5 nm/K Threshold current (whole temperature range) Ith 55 mA Forward voltage, PF = 0.5 PF, max. VF 1.5 V Radiant power at Ith 10 W Data Sheet 2 Pth 5 mW 1590 nm 2002-01-01 STL81004x STL81005x Technical Data Transmitter Electro-Optical Characteristics (cont'd) Parameter Symbol Limit Values min. Slope efficiency (-40...85C) Variation of 1st derivative of P/I Svar (0.1 to 0.4 mW) Differential series resistance Rise time (10%-90%) Fall time (10%-90%) typ. Unit max. 8 60 mW/A -30 30 % 8 100 200 ps 270 500 RS tr tf Monitor Diode Electro-Optical Characteristics Parameter Symbol Limit Values min. Dark current, VR = 5 V, PF = 0, T = Tmax 100 Capacitance, VR = 5 V, f = 1 MHz IR IP C5 Tracking error 1), VR = 5 V TE -1 Photocurrent, VR = 5 V, PF = 0.5 PF, max 1) Unit max. 500 nA 1000 A 10 pF 1 dB The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature range and relative to the reference point: Imon, ref = Imon (T = 25C, PF = 0.5 PF, max.). Thus, TE is given by: PF [ TC ] TE [ dB ] = 10 x log -----------------------P F [ 25C ] End of Life Time Characteristics Parameter Symbol Limit Values min. Threshold current at T = Tmax Unit max. Ith IF 7 70 Tracking Error TE -1.5 1.5 dB Monitor Dark Current, VR = 2 V, T = Tmax IR 1 A Current above threshold, over full temperature range, at Imon, ref = Imon (T = 25C, PF = 0.5 PF, max., BOL) Data Sheet 6 60 mA 2002-01-01 STL81004x STL81005x Fiber Data Fiber Data The mechanical fiber characteristics are described in the following table. Fiber Characteristics Parameter Limit Values min. typ. max. Mode Field Diameter 8 9 10 Cladding Diameter 123 125 127 Mode Field/Cladding Concentricity Error 1 Cladding Non-circularity 2 Mode Field Non-circularity 6 Cut off Wavelength 1270 Jacket Diameter 0.8 Bending Radius 30 Tensile Strength Fiber Case 5 Length 0.8 Data Sheet 7 Unit m % nm 1 mm N 1.2 m 2002-01-01 STL81004x STL81005x Eye Safety Eye Safety Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams. Especially do not look directly into the laser diode or the collimated laser beam when the diode is activated. Class 3B Laser Product According to IEC 60825-1 INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM Class 3B Laser Product Figure 4 Required Labels Class IIIb Laser Product According to FDA Regulations Complies with 21 CFR 1040.10 and 1040.11 LASER RADIATION - AVOID DIRECT EXPOSURE TO BEAM SEMICONDUCTOR LASER INVISIBLE RADIATION CLASS IIIb LASER PRODUCT Figure 5 Required Label Laser Data Wavelength 1550 nm Maximum total output power less than 50 mW Beam divergence (1/e2) 10 Data Sheet 8 2002-01-01 STL81004x STL81005x Package Outlines Package Outlines STL81005G Dimensions in mm Figure 6 Connector Options Model Connector Type STL81004G STL81005G SM FC/PC STL81004N STL81005N SM SC/PC 0 STL81004Z STL81005Z without connector Data Sheet 9 2002-01-01 STL81004x STL81005x Revision History: 2002-01-01 DS0 Previous Version: Page Subjects (major changes since last revision) Document's layout has been changed: 2002-Aug. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. Edition 2002-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.