SILICON EPITAXIAL PLANAR TYPE 1$$306 HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage Fast Reverse Recovery Time : Small Total Capacitance : VF=0.92V(Typ.) trr=60ns (Max. ) CT=2.2pF(Typ.) Unit in mm Small Package sc-61 MAXIMUM RATINGS (Ta=25C) a2 a 5 CHARACTERISTIC syMBoL | RATING | UNIT 7 p28 : So Maximum(Peak) Reverse Voltage VRM 250 Vv | | S th Th - Reverse Voltage VR 200 Vv 5 e S Maximum(Peak) Forward Current IFM 300* mA iH . 1. CATHODE 3 Average Forward Current To 100* mA 2 CATHODE 3 Surge Current (10ms) 1FSM x A 3. ANODE 1a) 4 4. ANODE 2m0-+4-17 3 Power Dissipation P 150 nW JEDEC _ Junction Temperature Tj 125 C EIAJ SC-61 Storage Temperature Range Tstg ~55~125 C TOSHIBA 1-3J31A * Unit Rating. Total Rating=Unit Rating x1.5 Weight : 0.013 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.| MAX.) UNIT Ve(1) | lF=10mA - 0.72 1.0 Forward Voltage v Ve(2) | Tr=100mA ~ 0.9| 1.2 1 Vp=50V - - 0.1 Reverse Current RG) R HA IR(2) | VR=200V - - 50 Total Capacitance CT Vp=0, f=1MHz - 1.5 3.0 pF Tf=lOmA, TR=10mA Reverse Recovery Time trr - ~ 60 ns RL=1000 Marking A 3